EP1665315A1 - Component for modifying the impedance of a coplanar waveguide and method for producing such a component - Google Patents
Component for modifying the impedance of a coplanar waveguide and method for producing such a componentInfo
- Publication number
- EP1665315A1 EP1665315A1 EP04762505A EP04762505A EP1665315A1 EP 1665315 A1 EP1665315 A1 EP 1665315A1 EP 04762505 A EP04762505 A EP 04762505A EP 04762505 A EP04762505 A EP 04762505A EP 1665315 A1 EP1665315 A1 EP 1665315A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- connecting element
- bridge
- signal line
- ground lines
- lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 31
- 238000009413 insulation Methods 0.000 claims description 19
- 238000009713 electroplating Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 description 25
- 238000010168 coupling process Methods 0.000 description 25
- 238000005859 coupling reaction Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 1
- -1 aluminum-silicon-copper Chemical compound 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49105—Switch making
Definitions
- the present invention relates to a device and a method for manufacturing a device for impedance change in a coplanar waveguide according' to the preamble of claim 1 and 6 respectively.
- a thin metal bridge is stretched between the ground lines of a coplanar waveguide.
- the bridge is electrostatically pulled onto a thin dielectric which is applied to a signal line lying between the masses, as a result of which the capacity of a "plate capacitor” formed from the bridge and signal line is increased.
- This change in capacitance influences the propagation properties of the electromagnetic waves guided on the waveguide.
- the metal bridge In the "Off” state (the metal bridge is to Signal line pulled down) should reflect a large part of the performance. In contrast, in the "on” state (the metal bridge is at the top), a large part of the power is to be transmitted.
- FIGS. 5a and 5b of the accompanying drawings. 6 also shows a highly schematic equivalent circuit diagram for this structure.
- the component 101 shown in FIGS. 5a and 5b for changing the impedance of a section of a waveguide 102 comprises two external ground lines 103, 104 and an intermediate signal line 105.
- a bridge arrangement 106 with a self-supporting bridge 107 is constructed via the ground lines 103 and 104 and the signal line 105 ,
- a section along the section line VV with the bridge 107 not deflected and the bridge 107 deflected (shown in broken lines) is shown in Fig. 5b.
- the bridge 107 is stretched between the galvanized post elements 108 arranged at the ends.
- a direct control voltage with respect to the lines 103, 104, 105 can be applied to the bridge via a connection 109 in order to pull the bridge against the lines 103, 104, 105 via electrostatic forces.
- an insulation layer 110 is placed in the area below the bridge over lines 103, 104, 105 (see in particular the sectional arrangement in this regard).
- the invention is based on a component for changing the impedance in a coplanar waveguide, the two ground lines and a signal line lying between the ground lines, and a conductive connecting element comprises, which has a covering area to the two ground lines and the signal line and is insulated, so that a capacitor is formed in each case.
- the essence of the invention is that the connecting element and the lines are arranged or designed such that the respective capacitor between the ground lines and the connecting element has an unchangeable capacitance, but the capacitor between the connecting element and signal line has a variable capacitance. This procedure is based on the knowledge that it is very difficult to switch the switchable bridge externally, that is to say in the embodiment last mentioned above. H . in Fig.
- the connecting element is mechanically, preferably elastically, deformable in such a way that a distance between the connecting element and the line, which together with the connecting element forms the variable capacitance, in the region of the overlap area, e.g. is changeable via electrostatic forces.
- the signal line or the ground lines are mechanically deformable at a distance in which they cover or cover the connecting element in such a way that the distance can be set in the area of the respective covering area.
- the ground lines are not connected by a bridge, but it is e.g. A bridge is provided in the signal line, under which the connecting element runs, the connecting element being capacitively coupled to the ground lines by covering surfaces with the ground lines and at least one insulation layer interposed therebetween.
- This variant therefore has the advantage that the bridge can be implemented independently of the distance between the ground lines and, at the same time, the capacitive coupling between ground lines and signal lines can be switched with comparatively higher reproducibility.
- a voltage can preferably be applied to the connecting element. Electrostatic forces on the capacitor between the connecting element and the signal line can thus be used, for example, in order to be able to switch its capacitance, for example between two values.
- a method for producing the components just described for changing the impedance in a coplanar waveguide which comprises two ground lines and a signal line lying between the ground lines and a conductive connecting element which has an overlap area with the two ground lines and the signal line and is electrically insulated, so that A capacitor is formed in each case, the essential aspect lies in the following process steps:
- ground lines and at least some of the signal lines are preferably generated via an electroplating step.
- a starting layer is first deposited. This starting layer is conveniently structured using a lift-off process. This prevents damage to the dielectric which has already been applied to the connecting element. In addition, there is no need to pay attention to whether the starting layer can be structured selectively to the material from which the connecting element is made.
- a sacrificial layer is applied and structured.
- the area of the future bridge is also covered with the sacrificial layer.
- every exposed area of the sacrificial layer can be galvanically reinforced in an electroplating step, if a starting layer is additionally present in this area.
- the galvanic layer is preferably allowed to grow up to such an extent that it overlaps the sacrificial layer and a mushroom structure is created in the cut, so to speak.
- a further metallization is then placed and structured over the sacrificial layer with galvanic reinforcements. This primarily creates the bridge of the signal line, the remaining areas preferably being shaped in plan view in accordance with the contour of the signal line and the ground lines.
- the sacrificial layer is then preferably anisotropically removed down to the area under the bridge.
- FIGS. 5a and 5b a high-frequency switch in plan view (Fig. 5a and a section along the section line VV (Fig. 5b), which is known from the prior art and 6 shows an electrical equivalent circuit diagram for the high-frequency switch according to FIGS. 5a and 5b.
- the capacity of the second coupling capacitance 15 is fixed. In FIGS. 1a and 1b, this corresponds to the intersection of the connecting element 6 with the ground lines 3, 4.
- the inductance 116 and the ohmic resistor 115 represent the region of the connecting element between the signal line 5 and the respective ground line 3, 4.
- the changeable coupling capacitance becomes through the intersection of the bridge 7 with the connecting element 6.
- the corresponding circuit diagram as in FIG. 3 also results for a high-frequency switch according to FIGS. 2a and 2b.
- the high-frequency switch according to FIGS. 2a and 2b differs significantly from the high-frequency switch according to FIGS. La and lb in that, instead of a longitudinal bridge along the signal line 5 in FIG. 2, a transverse bridge 21 is implemented between the ground lines 3, 4.
- the high-frequency switch 20 has the following structure: a connection element is not first arranged on the substrate 8 with an insulation layer 9, but rather the line structures of the coplanar waveguide 22 with the ground lines 3, 4 and the signal line 5. In the region of the bridge 21 an insulation layer 23, 24, 25 is provided above each of the lines 3, 4, 5. This is followed by a post element 26 in each case the external ground line 3, 4.
- the post elements 26 have three layers when viewed in section. First a starting layer 27, followed by a galvanically grown layer 28 and covered with a covering layer 29, which, viewed electrically, corresponds to the connecting element 6 and from which the bridge 21 is formed. A control voltage can be applied to the post structure 26 with the bridge 21 via a connection pad 30.
- the coupling capacitance 15 (formed from the respective coupling capacitances of the connecting element 6 or the post elements 26) in series with the actual switching capacitance 115, the inductance 117 and the ohmic resistor 116 lies and thus form a resonant circuit. If the coupling capacitance 15 is selected to be large, compared to the switching capacitance 115 in the driven, i.e. In the down state of the respective bridge 7, 21, the switch behaves with respect to a resonance frequency of the resonant circuit like a corresponding switch without an integrated one
- FIGS. 1a and 1b The manufacture of a high-frequency switch 1 according to FIGS. 1a and 1b will be illustrated with the aid of FIGS. 4a to 41.
- the starting point is, for example, a high-resistance p-doped silicon substrate 8 with a thickness of 300 ⁇ m.
- the substrate 8 is preferably thermally oxidized to produce an insulation layer 9. So far, a PECVD layer has a higher damping.
- molybdenum tantalum MoTa
- MoTa molybdenum tantalum
- Other metallizations are also possible, but a refractory metal such as molybdenum tantalum should preferably be used.
- molybdenum tantalum is comparatively base and can be selectively etched at the end of the process sequence compared to all other metals used. This is particularly important for connection bars 40 for performing the electroplating.
- the applied layer is structured in order to produce the connecting element 6 therefrom. This exists in the area of the later ground lines 3, 4 from a surface 41 with a predetermined size to define the fixed coupling capacitance 15, narrow connecting webs 42 to a central electrode surface 42, with which the coupling to the later signal line is established.
- An insulation layer for example PECVD SiOx, is then deposited, for example at 300 °.
- silicon oxynitrite (SiON), silicon nitrite (Si 3 N 4 ) or another insulator can also be used.
- the insulation layer is also structured, in particular in the area of the connection bars and at a connection point 43 for a later connection pad 10 for applying a control voltage to the high-frequency component (see FIG. 4d).
- FIG invention. 4e a Startmetallmaschines silk 12, preferably by sputtering, for example in 'a thickness of 300 nm (suitable as metals such as titanium-tungsten, gold or chrome-copper into account) and on in the form of the intended waveguide structure with respect the ground line and the signal line, preferably structured by a lift-off process.
- the previously applied insulation layer 11 is not affected by the lift-off process.
- the structure of the signal line it should be noted that this is interrupted in the area of the electrode 43 (here the connection is made later through the bridge 7 arranged above it).
- connection pad 10 is produced with the start metallization.
- Layer 13 is then produced in an electroplating process.
- the material for the electroplating process is e.g. Copper. This process step can be seen in FIG. 4g.
- the cover layer 14 is produced together with the bridge 7.
- the bridge 7 for example, aluminum or aluminum-silicon-copper is applied in a thickness of 300 to 800 nm and structured according to the structures of the ground lines 3, 4 or the signal line 5. This means that the bridge 7 continues in the galvanized area of the signal line 5 as a cover layer.
- 4i illustrates that the sacrificial layer 45 is now removed in an anisotropic etching step, for example by RIE 0 2 plasma etching, except for the area below the bridge 7.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10342938A DE10342938A1 (en) | 2003-09-17 | 2003-09-17 | Component for impedance change in a coplanar waveguide and method for manufacturing a device |
PCT/DE2004/001658 WO2005036580A1 (en) | 2003-09-17 | 2004-07-24 | Component for modifying the impedance of a coplanar waveguide and method for producing such a component |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1665315A1 true EP1665315A1 (en) | 2006-06-07 |
EP1665315B1 EP1665315B1 (en) | 2011-10-12 |
Family
ID=34352897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04762505A Not-in-force EP1665315B1 (en) | 2003-09-17 | 2004-07-24 | Component for modifying the impedance of a coplanar waveguide and method for producing such a component |
Country Status (5)
Country | Link |
---|---|
US (1) | US7535325B2 (en) |
EP (1) | EP1665315B1 (en) |
AT (1) | ATE528775T1 (en) |
DE (1) | DE10342938A1 (en) |
WO (1) | WO2005036580A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8043950B2 (en) | 2005-10-26 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7851709B2 (en) * | 2006-03-22 | 2010-12-14 | Advanced Semiconductor Engineering, Inc. | Multi-layer circuit board having ground shielding walls |
FR2901781B1 (en) | 2006-05-31 | 2008-07-04 | Thales Sa | RADIOFREQUENCY OR HYPERFREQUENCY MICRO-SWITCH STRUCTURE AND METHOD OF MANUFACTURING SUCH STRUCTURE |
US8740819B2 (en) * | 2007-03-21 | 2014-06-03 | Massachusetts Institute Of Technology | Method and apparatus for measuring representational motions in a medical context |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10037385A1 (en) * | 2000-08-01 | 2002-02-14 | Bosch Gmbh Robert | Device with a capacitor |
DE10037785C1 (en) | 2000-08-03 | 2001-07-05 | Agfa Gevaert Ag | Device for digital detection of a document has stop movable between document and sensor for pre-scanning, enabling associated document lines to be projected onto pre-scan sensor areas |
DE10100296A1 (en) * | 2001-01-04 | 2002-07-11 | Bosch Gmbh Robert | Device with a capacitor with variable capacitance, in particular high-frequency microswitches |
JP3818176B2 (en) * | 2002-03-06 | 2006-09-06 | 株式会社村田製作所 | RFMEMS element |
-
2003
- 2003-09-17 DE DE10342938A patent/DE10342938A1/en not_active Withdrawn
-
2004
- 2004-07-24 WO PCT/DE2004/001658 patent/WO2005036580A1/en active Application Filing
- 2004-07-24 AT AT04762505T patent/ATE528775T1/en active
- 2004-07-24 US US10/572,220 patent/US7535325B2/en not_active Expired - Fee Related
- 2004-07-24 EP EP04762505A patent/EP1665315B1/en not_active Not-in-force
Non-Patent Citations (1)
Title |
---|
See references of WO2005036580A1 * |
Also Published As
Publication number | Publication date |
---|---|
ATE528775T1 (en) | 2011-10-15 |
EP1665315B1 (en) | 2011-10-12 |
DE10342938A1 (en) | 2005-04-21 |
US7535325B2 (en) | 2009-05-19 |
WO2005036580A1 (en) | 2005-04-21 |
US20070229198A1 (en) | 2007-10-04 |
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