DE10031569A1 - Highly miniaturized relay in integrated circuit form, providing reliable operation and high isolation at high frequencies, includes see-saw mounted plate alternately closing contacts on substrate when rocked - Google Patents

Abstract

The substrate carries a lever support assembly (15) with set, upwardly projecting height, terminating in a ridge. The long plate (18) rests with its center on the ridge, and rocks, held by a retainer providing restoration forces (19). Attractive forces drive the plate to rock. Moving contacts (16A, 16B) on opposite ends of the plate, make or break connection with the fixed contacts (13A, 13B, 14A, 14B) fixed to the substrate. An Independent claim is included for corresponding construction methods.

Description

Field of the invention

This invention relates generally to an integrated microswitch which, by use of techniques for manufacturing semiconductor IGs, and in particular one Integrated microswitch, in which a movable plate can be pivoted on a lever support arrangement is arranged that movable contacts that on the free swivel end cuts of the movable plate are fixed, by means of electrostatic attraction or electromagnetic attraction or repulsion force alternately in and out of contact with corresponding fixed contacts are formed, which are formed on a substrate, and a Process for its production.

Background of the Invention

With the improved functionality of measuring instruments or different types of test Very powerful miniature switches are used in large quantities for systems Applications are useful that range from direct current to high frequency electrical current pass. It also requires very powerful miniature switches in circuit elements of integrated circuits can be installed, with signals up to microwaves or Millimeter waves (these integrated circuits hereinafter referred to as MMIC be designated).

Because of this requirement, silicon or gallium arsenide semiconductors have traditionally been used ter-FETs (field effect transistors) or monolithic switching elements using diodes used. The monolithic switching element has the advantages that it is highly reliable speed offers because there are no mechanically moving components and that the use the mass production of miniature switch components in photolithography technology with consistent characteristics.

On the other hand, such a switching element has the disadvantage that it has a relatively large size Loss of conduction entails since it is not possible to adequately increase the on resistance reduce if it is in the on state. Another disadvantage is that it has poor separability because it is not possible to remove the electrostatic Reduce capacity appropriately when locked.

In this regard, switches such as mechanical microswitches are under Using mechanical contact components the advantages of reduced transmission losses as well high separation capacity well combined. In this regard, there are various manufacturing methods  Integrated microswitch using the technique of manufacturing semiconductor ICs (Micromachining technology) has been tried.

Description of the technical background

FIGS. 49 and 50 illustrate the construction of an ordinary known integrated microswitch is, as described for example in "Micromechanical Membrane Switches on Silicon" by KE Petersen, IBM J. RES. DEVELOP., Vol. 23, No. 4, July 1979, pages 376-385. In these FIGS. 49 and 50 are top for the purpose of illustration and added lower electrode.

The conventional integrated microswitch shown here comprises a substrate 1 made of a semiconductor such as silicon, in which a recess 2 is formed, a lower electrode 3 , which is formed at the bottom of the recess 2 , a cantilever 4 , which is on the upper surface of the substrate is formed and extends over the opening of the recess 2 , and an upper electrode 5 which is formed on the upper surface of the cantilever 4 at a position opposite the lower electrode, the arrangement being such that when a DC voltage is applied between the lower electrode 3 and upper electrode 5 to generate an electrostatic attraction, the free end of the cantilever 4 is moved by the attraction toward the bottom of the recess 2 to a movable contact mounted on the free end of the cantilever 4 in contact with to bring fixed contacts (signal lines) 7 and 8 to an electrical connection between the fixed contacts 7 and 8 to manufacture.

In addition, it should be noted that the jib 4 can be formed by the steps of: forming a doped region (p + region) 1 A in a surface of the silicon substrate 1 which is doped with boron for a vertical etch stop; Forming a bottom electrode on the doped zone; Form, on the doped zone and on the lower electrode, a silicon epitaxial layer 1 B, which is referred to as the sacrificial layer; Forming a layer of a material such as resin having a suitable elasticity such that the upper surfaces of the sacrificial layer 1 B spans; Forming a substantially U-shaped cutout groove 9 (see FIG. 49) and removing the sacrificial layer by bringing a silicon etchant such as, for example, a hot (118 ° C.) solution of ethylenediamine pyrocatechol (EDP) through the cutout groove 9 , to thereby form a recess 2 in the substrate. The hot EDP solution can etch silicon at a relatively high speed, but can hardly etch SiO ₂ and the doped zone.

Another conventional integrated microswitch that can be used up to a high frequency range is disclosed in The 8 ^th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX. Stockholm, Sweden "a Surface Micromachined Miniature Switch for Telecommunications Applications with Signal Frequencies from DC to 4 GHz," pp. 384-387, 25-29. June 1995 by J. Jason Yao et al.

All of the conventional microswitch configurations described above are such that the cantilever 4 is elastically deformed with the movable contact 6 mounted thereon by means of electrostatic attraction or electromagnetic attraction or repulsion force generated by applying a driver voltage between the upper and lower electrodes a contact is made with the fixed contacts 7 and 8 . As a result, there is a problem in the durability of the boom 4 , and there are likely to be occurrences where the fixed contacts 7 and 8 remain in the ON state as a result of a reduced restoring force or breakage of the boom 4 .

In order to improve the durability of the boom 4 , it is conceivable to increase the thickness of the boom 4 . When the thickness of the boom 4 is increased, however, there is a problem that, accordingly, a larger driving force would be required for the elastic deformation of the boom 4 . There is an additional disadvantage that the pressure with which the movable contact 6 is pressed in contact with the fixed contacts 7 and 8 is reduced, which leads to a deterioration in the contact stability.

Summary of the invention

Although the integrated microswitch manufactured by the micromachining technology due to the fact that the metal contacts are mechanically driven in and out of contact be moved together for a long time the requirement that the stability over a is to improve for a longer period of time, it has the advantage that such switches by Use of photolithography technology can be mass-produced, as well the advantage of reduced forward resistance and high isolation loss. You would get into that Enjoy these advantages if the above requirement were met.

It is therefore an object of this invention to provide an improved integrated microswitch create that is designed so that fewer occurrences of breaking the moving Components occur, and is capable of safe on / off switching operation as well to create a higher contact pressure even with a relatively small attraction.

According to this invention is a movable plate with a certain longitudinal extent voltage by position holding arrangements in a position parallel to the substrate and with a Rocking movement around a pivot point in the central position of the longitudinal extension of the movable plate movably attached to the substrate. A lever support arrangement is like this formed to extend from the substrate below the center position of the movable plate extends upwards and has an upper rib section on its upper side. The moveable surface is formed by using the semiconductor manufacturing technology such that the movable plate through the position holding arrangements above the lever support arrangement so Substrate is attached, that "in principle" a minimal gap between the upper rib section the lever support assembly and the movable plate positioned over it. The movable plate attached to the substrate by the position holding assemblies is in one Rocking movement is movable with the help of attraction (or repulsive force) that between the substrate and a respective selected one of the opposite pivot end portions of the movable plate is generated, which is on opposite sides with respect to the  Lever support assembly are located while at their center with the lever support assembly in Intervention stands and is supported by her. Generating attraction (or repulsion force) is switched from between the selected one of the pivot end portions and the Substrate to between the other of the pivot end portions and the substrate, and vice versa.

There are also movable contacts at the opposite pivot end portions in the Arranged near the respective free ends, while fixed contacts on the substrate side corresponding movable contacts are arranged opposite, so that in response to the Rocking movement of the movable plate, the movable contacts in and out of contact with the fixed contacts are moved to perform the switching function.

Here, the expression "there is in principle a minimal gap" means that the moveable che plate is made so that there is a minimal gap in the design, as by Reference to the manufacturing process described below can be seen. In other Words the term "in principle" means that in the finished product the movable plate depending on the weight of the movable plate, it may take a position in which is in contact with the upper rib portion of the fulcrum assembly.

In the present invention, the contact configuration is subject to various desired ones Modifications, which is not just the configuration for making and breaking the connection between a movable contact and a fixed contact, but also the Configuration for establishing and breaking the connection between a plurality of fixed Contacts through a moving contact.

The means for creating a driving force for the moving plate for its rocking motion can also take different forms.

The integrated microswitch according to claim 1 of the present application comprises:
a lever support assembly protruding from a side surface of a substrate;
a movable plate supported by the lever support assembly for rocking motion;
a driver assembly for generating an attractive force (or repulsive force) between the substrate and one of the opposite pivot end portions of the movable plate that are on opposite sides with respect to the fulcrum assembly;
movable contacts mounted on the opposite free ends of the movable plate; and
fixed contacts, which are designed so that they can be electrically connected by the rocking movement of the movable plate through the movable contacts and separated from them.

The integrated microswitches according to claims 2 to 9 relate to variations in the drivers arrangement of the integrated microswitch according to claim 1.

Claim 2 is directed to the driver arrangement, which consists of two formed on the substrate lower electrodes and the movable plate made of a conductive material  is constructed. For example, if a positive potential of a DC power source is connected to the movable plate is applied while a negative potential alternating between one and the other other of the two lower electrodes is applied, therefore, the movable plate is caused is moved in a rocking motion due to electrostatic force, causing the movable Contacts come into electrical contact with the fixed contacts and detach from them.

According to claim 3, the movable plate is made of an insulator and has upper Electrodes on the opposite pivot end portions formed and on the opposite sides are arranged with respect to the lever support arrangement, while lower Electrodes are formed on the substrate at positions relative to the fulcrum assembly are symmetrical and opposite the corresponding upper electrodes. The creation of a Driving voltage between the upper electrodes and the lower electrodes moves the movable plate in a rocking motion, causing the movable contacts get electrical contact with the fixed contacts and detach from them.

Claim 4 discloses an electrostatically driven integrated microswitch, in which one A plurality of lower electrodes on the substrate opposite each of the opposite Pivoting end portions of the movable plate are formed so that a plurality of electrostatic ones capacities between the plurality of lower electrodes and each of the opposite Pivoting end portions of the movable plate is formed, the arrangement being made so is that when a driving potential between the plurality of lower electrodes corresponds to one of the opposite pivot end portions of the movable plate is electric Charge in the respective electrostatic capacities is collected to electrostatic Attractive forces between the substrate and one of the opposite pivot ends to create cuts.

The integrated microswitch disclosed in claim 5 is characterized by the driver arrangement which includes planar coils formed on the movable plate at positions which are symmetrical with respect to their pivot point, and by a permanent magnet arrangement, which is designed to generate magnetic fields that are parallel to those of the planar coils generated magnetic fields, thereby generating magnetic attractive forces.

The use of permanent magnets as a magnetic field generating means enables Creation of a considerable attraction and repulsion even if that of the Magnetic fields generated by planar coils are minimal, creating an integrated microswitch is created, the stable contact state between the fixed contacts and the ensures moving contacts.

The integrated microswitch disclosed in claim 6 is characterized by the drive arrangement records the moving plate and excitation made of magnetic material includes coils, which consist of tubular wound wire and are fixed in the substrate. The winding of wire in tubular form enables the number of turns to be increased, which helps to generate an increased magnetic attraction or repulsion force.  

As a result, this construction in turn provides an integrated microswitch that is stable Ensures contact state between the fixed contacts and the movable contacts.

The integrated microswitch disclosed in claim 7 is characterized by the drive arrangement which contains excitation coils made of wire wound in a tubular shape, wherein the excitation coils are supported by an additional substrate that is above the movable plate is mounted so that an attractive force from above the movable plate is delivered.

The integrated microswitch disclosed in claim 8 is characterized by the drive arrangement which includes pieces of magnetic material for magnetic attraction, which mounted on the movable plate, which are made of a non-magnetic material is, and excitation coils, which are embedded in the substrate, so that the pieces for the magneti attraction is an attraction associated with that generated by the excitation coils Can generate magnetic fields.

While the pieces for magnetic attraction according to claim 8 characterized are that they are simply made of magnetic material, claim 9 is to the Drive arrangement directed, which is further characterized in that the pieces for the magnetic attraction with opposite polarities along the direction of their thickness are magnetized so that a contact pressure with greater strength (that between the movable Contacts and the fixed contacts should work) through synergistic effects between the Magnetic fields of the pieces for magnetic attraction and those of the excitation coils are generated can be.

Claims 10 and 11 of this application are to the position holding arrangements for holding the movable plate in position.

Claim 10 proposes position holding assemblies which comprise carrier plates which of the planar surface of the substrate protrude, and elastically deformable hinge arrangement gene, which are integrally formed with the movable plate and the opposite sides of the Connect the movable plate to the carrier plates at the pivot point. The swivel arrangement now conditions allow the movable plate to move and prevent in the rocking motion nevertheless the positional offset of the movable plate above the lever support arrangement.

Claim 11 proposes position holding arrangements comprising a pair of support rods which extend from the opposite sides of the movable plate at the pivot point perpendicular to the longitudinal Extend dimension of the movable plate, and a pair of bearing arrangements for receiving the they include penetrating support rods. The bearing arrangements are on the carrier plates formed, which in turn protrude from the planar surface of the substrate.

The claims 12 to 17 of this application are based on the structure of the fixed contacts and moving contacts.  

Claim 12 proposes an integrated microswitch in which the movable contacts by precipitation or deposition on the underside of the movable plate on the free Ends of their opposite pivot end portions are formed and in outer ends that extend beyond the free ends of the movable plate, while the fixed ends Contacts are formed on the planar surface of the substrate, the arrangement being made in this way is that the fixed contacts are electrically connected to each other by means of the movable contacts and be separated from each other.

Claim 13 proposes an integrated microswitch in which the movable contacts Elasticity are provided, which enables elastic deformation, the movable Contacts with elasticity act so that they have a self-cleaning process between the movable Chen contacts and the fixed contacts.

Claim 14 proposes an integrated microswitch in which movable contacts on the Top of the movable plate near its opposite pivot end portions are formed while fixed contacts are attached to respective carriers attached to one of the planar surface of the substrate are attached upwardly spaced elevation.

Claim 15 proposes an integrated microswitch in which fixed contacts made of conductors are formed which include signal transmission lines connected to a predetermined impedance are adjusted.

Claim 16 is directed to the feature of the construction of the signal transmission lines that a predetermined impedance is matched and formed from microstrip lines.

Claim 17 proposes an integrated microswitch in which fixed contacts from komplana ren microstrip conductors are formed.

It can be seen that the integrated microswitch according to claims 15 to 18 the fact that the fixed contacts from impedance-matched signal transmission lines have the advantage of on / off control even with high frequency signals ensure without affecting the waveform quality.

Claim 18 proposes an integrated microswitch comprising:
fixed contacts formed on a side surface of a substrate;
a cantilever attached to the substrate at one end and having the other pivotable free end opposite a fixed contact, the cantilever being formed from a conductor; and
an excitation coil which is arranged opposite the pivotable free end of the arm, the coil being formed from a tubularly wound wire.

Claim 19 proposes an integrated microswitch comprising:
a movable plate which is cantilevered on a side surface of a substrate, the movable plate being made of a magnetic material having conductivity;
a fixed contact holding bracket formed of a non-magnetic conductor, the bracket holding a firm contact on itself in a position opposite but slightly offset from the pivotable free end of the movable plate; and
an excitation coil, which is arranged opposite the pivotable free end of the arm, the coil being formed from tubularly wound wire.

According to the invention of claim 20, an integrated microswitch is created in which a movable plate of polygonal shape, for example rectangular, in the middle of a lever support arrangement is supported, which protrudes from a substrate. A lower one Electrode is formed on the underside of the substrate opposite to the movable plate. Movable contacts are on the bottom of the movable plate at each of its four corners formed while triangular top electrodes on each of the top of the movable plate their four corners are formed. The arrangement is such that when a drive voltage is placed between one of the upper electrodes and the lower electrode, a corner portion of the movable plate is moved towards the substrate, whereby the associated one of the movable Contacts are moved into a conductive connection with the corresponding fixed contact, while the others are not = in contact with the corresponding fixed contacts.

While the lever support arrangement according to the previous claims is shown so that it has an upper rib portion, the lever support arrangement in this claim 20 designed to have an upper rib with a conical shape that has a minimum length of "Rib" (horizontal), but it can of course depend on the polygonal Shape have any suitable shape.

Claim 21 proposes an integrated microswitch that has a plurality of integrated micro includes switches that are formed on a common substrate and become a monolithic Unit are combined.

Claim 22 is directed to an integrated microswitch which is sealed in a Housing is housed, which is then filled with inert gas.

Claims 23 to 27 propose methods of making the various described above integrated microswitch.

Claim 23 is directed to the manufacturing method shown in FIG. 5.

Claim 24 teaches a method for producing the integrated microswitch with the structure shown in FIGS . 25 to 28, in which bearing arrangements are used as position holding arrangements.

Claim 25 proposes a method for producing the integrated microswitch, which is provided with elastically deformable movable contacts as shown in FIG. 17.

Claim 26 proposes a method for producing the integrated microswitch, which is provided with planar coils as shown in FIGS . 30 to 32.

Claim 27 is directed to a method for producing the integrated microswitch, which is provided with excitation coils as shown in FIGS. 38 and 39.

Claim 28 is directed to an integrated microswitch, in which a method for formation a minimum gap is defined.

Claim 29 is directed to an integrated microswitch in which movable contacts and fixed contacts are kept in an off state while the movable plate is deactivated is.

As discussed above, the integrated microswitch in accordance with this invention causes the movable plate by an attractive force or a repulsive force by either static or magnetic electricity is generated, is moved in a rocking motion to cause that provided at the pivot ends of the movable plate movable contacts establish an electrical connection with the fixed contacts and interrupt. It is therefore clear that the integrated microswitch of this invention is capable of a good quality switching function with reduced on-state resistance during wiring and high blocking resistance in the open state.

In addition, the integrated microswitch according to this invention enables due to the micro structure created by micromachining techniques such as photolithography technology is realized an acceleration of the movement of the moving contacts, which is an advantage brings to deliver fast responding integrated microswitches.

In addition, the microstructure enables the integrated microswitch according to this invention to accommodate a larger number of switches in a limited space, so that even a complicated switching arrangement can be integrated in such a small configuration, like it's a semiconductor device. As a result, the application areas are expected or fields of use of the integrated microswitch of this invention are enlarged.

Brief description of the drawings

Fig. 1 is a plan view showing a first embodiment of the integrated micro-switch according to claim 1 or 2;

Fig. 2 is a cross-sectional view taken along line 2-2 of Fig. 1;

Figure 3 is an electrical equivalent circuit diagram of the microswitch shown in Figures 1 and 2;

Fig. 4 is a perspective view illustrating the general structure of the integrated microswitch shown in Figs. 1 and 2;

Fig. 5 are diagrammatic views showing successive steps of a process for manufacturing the integrated micro switch shown in Figures 1 and 2 represent.

Fig. 6 is a plan view illustrating a second embodiment which is a modification of the integrated microswitch shown in Figs. 1 and 2;

Fig. 7 is a cross-sectional view taken along line 7-7 of Fig. 6;

Fig. 8 is an electrical equivalent circuit diagram of the integrated microswitch shown in Figs. 6 and 7;

Fig. 9 is a plan view illustrating a third embodiment which is another modification of the integrated microswitch shown in Figs. 1 and 2;

Fig. 10 is a cross-sectional view taken along line 10-10 of Fig. 9;

Figure 11 is an electrical equivalent circuit diagram of the integrated microswitch shown in Figures 9 and 10;

Fig. 12 is a plan view illustrating a fourth embodiment which is another modification of the integrated microswitch shown in Figs. 1 and 2;

Fig. 13 is a cross-sectional view taken along line 13-13 of Fig. 12;

Fig. 14 is a plan view showing a fifth embodiment of the integrated micro-switch according to claim 3;

Fig. 15 is a cross-sectional view taken along line 15-15 of Fig. 14;

Fig. 16 is a cross-sectional view illustrating a sixth embodiment which is a modification of the integrated microswitch shown in Fig. 14;

Fig. 17 are diagrammatic views illustrating sequential steps of a process for manufacturing the integrated microswitch shown in Figs. 14 and 15;

Fig. 18 is a cross-sectional view illustrating a seventh embodiment which is a modification of the integrated microswitch shown in Fig. 14;

Fig. 19 is a cross-sectional view illustrating an eighth embodiment which is another modification of the integrated microswitch shown in Fig. 14;

Fig. 20 is a plan view showing a ninth embodiment of the integrated micro-switch according to claim 4;

Fig. 21 is a cross-sectional view taken along line 21-21 of Fig. 20;

Fig. 22 is a plan view showing a tenth embodiment of the integrated micro-switch according to claim 11;

Fig. 23 is a cross sectional view taken along line 23-23 of Fig. 22;

Fig. 24 is a plan view illustrating an eleventh embodiment that is a combination of the embodiment shown in Fig. 22 and the embodiment shown in Fig. 20;

FIG. 25 are cross sectional views illustrating successive steps of a process for manufacturing the integrated micro switch shown in FIG. 22;

Fig. 26 are cross-sectional views illustrating successive steps as a continuation of the steps of the process shown in Fig. 25;

Fig. 27 are cross-sectional views illustrating successive steps as a further continuation of the steps of the process shown in Figs. 25 and 26;

Fig. 28 is a plan view additionally illustrating the step shown in Fig. 26A;

Fig. 29 is a plan view additionally illustrating the step shown in Fig. 26A;

Fig. 30 is a plan view illustrating a twelfth embodiment of the integrated microswitch according to claim 5;

Figure 31 is a cross-sectional view taken along line 31-31 of Figure 30;

Fig. 32 is a plan view illustrating a thirteenth embodiment which is a modification of the embodiment shown in Fig. 30;

Fig. 33 is a plan view showing a fourteenth embodiment according to claim 6;

Fig. 34 is a cross-sectional view taken from the side of Fig. 30;

Fig. 35 are diagrammatic views illustrating successive steps of a process for manufacturing the integrated micro switch shown in Figures 33 and 34.

Fig. 36 is a perspective view illustrating an example of the excitation coil used in the integrated microswitch shown in Figs. 33 and 34;

Fig. 37 is a plan view illustrating the excitation coil shown in Fig. 36 mounted in a hole formed in the substrate;

Fig. 38 is a plan view illustrating a fifteenth embodiment which is a modification of the integrated microswitch shown in Figs. 33 and 34;

Fig. 39 is a cross-sectional view illustrating the structure of the integrated microswitch shown in Fig. 38;

Fig. 40 is a cross-sectional view illustrating a sixteenth embodiment of the integrated micro-switch according to claim 18;

Fig. 41 is a cross-sectional view showing a seventeenth embodiment of the integrated micro-switch according to claim 19;

Fig. 42 is a plan view illustrating an eighteenth embodiment which is another modification of the integrated microswitch shown in Figs. 33 and 44;

Fig. 43 is a plan view seen from above of Fig. 42;

Fig. 44 is a plan view showing a nineteenth embodiment of the integrated micro scarf ters of claim 1;

Fig. 45 is an electrical equivalent circuit diagram of the switch shown in Fig. 33;

Fig. 46 is a plan view illustrating a twentieth embodiment of this invention;

Fig. 47 is a cross-sectional view illustrating a twenty-first embodiment of this invention;

Fig. 48 is a perspective view illustrating a twenty-second embodiment of this invention;

Fig. 49 is a perspective view illustrating the prior art; and

Fig. 50 is a cross-sectional view taken along line 50-50 of Fig. 49.

Description of the preferred embodiments

Figs. 1 to 4 illustrate a first embodiment of the integrated micro-switch of this invention according to claims 1, 2, 10 and 12 represent a designated at 11 made of a semiconductor such as silicon (Si) substrate produced or gallium arsenide (GaAs).

The integrated microswitch of this embodiment is configured to make the electrical connection between the separate fixed contacts 13 A and 13 B or 14 A and 14 B, which are arranged on an insulating layer 12 applied to the substrate 11 , by means of that on a movable plate 18 formed movable contacts 16 A and 16 B to open and close.

The movable contacts 16 A and 16 B are formed on the underside of an insulating layer 26 which is formed on the bottom of the electrically conductive movable plate 18 ( Fig. 2).

The movable plate 18 has a pair of position Exemplary assemblies 19, which perpendicular from its opposite lateral sides in the middle between the opposite ends thereof right (in the vertical direction as shown in Fig. 1) to the longitudinal length of the bewegli chen plate (the direction from right to extend to the left as shown in Fig. 1). From the upper surface of the substrate 11 protrudes toward the center of the movable plate 18 a lever support assembly 15 , which serves as an arrangement for the movable plate 18 to perform a rocking motion. The position holding arrangements 19 are formed in one piece with the movable plate 18 and serve to maintain the position of the movable plate 18 relative to the substrate 11 . The moveable plate 18 is made, for example, of a multilayer film that includes a lower layer of polysilicon and an upper layer of electrically conductive material such as aluminum. The illustrated embodiment shows an example in which the position holding arrangements 19 comprise elastically deformable rotary joints. The pair of position holding assemblies 19 have at their outer terminal ends a pair of electrode sections 21 , which are electrically and mechanically connected to carrier plates 21 A, which are formed on the insulating layer 12 such that they protrude from the substrate like the lever support arrangement, the electrode sections being, for example Assemble metal plating layers. The position holding assembly 19 is preferably made as long as possible, and in the example shown in Fig. 1, it is formed in a serpentine shape to facilitate the elastic deformation. It should be noted that the position holding assembly 19 serves to hold the movable plate 18 over the fulcrum assembly 15 without misalignment, and still holds it so that it can rock about the fulcrum assembly when the plate engages the fulcrum assembly located. It should be noted that the position holding arrangement 19 does not have to exert an elastic biasing force on the movable plate 18 , but only has to prevent displacement of the movable plate 18 with respect to the correct position. As a result, the position holding arrangement 19 can be in the form of a narrow strip or a thin wire and requires little strength.

On the insulating layer 12 of the substrate 11 , the lower surface of the movable plate 18 is arranged opposite lower electrodes 22 A and 22 B. The electrodes 22 A and 22 B are arranged symmetrically with respect to the lever support arrangement 15 and are designed such that they can be selectively supplied with a drive voltage via their connecting sections 23 A and 23 B, respectively. When a drive voltage is applied to the movable plate 18 and one of the lower electrodes, such as the electrode 22 A, an electrostatic attraction is generated so that the movable contact 16 A formed at the swing end of the movable plate 18 is in contact with the fixed contacts 13 A. and 13 B is moved. This creates an electrical connection between the terminals 13 A- 1 and 13 B- 1 . In contrast, when a driving voltage is applied to the movable plate 18 and the other lower electrode 22 B, an attractive force is applied to the other pivot end of the movable plate 18 so that the other movable contact 16 B is in contact with the fixed contact 14 A and 14 B is moved. In this case, an electrical line is thus produced between the connections 14 A- 1 and 14 B- 1 . Fig. 3 illustrates diagrammatically an electrically equivalent circuit of the integrated microswitch shown in Figs. 1 and 2.

It should be noted that this embodiment shows an example in which the fixed contacts, as stated in claim 15, are composed of conductors comprising an impedance-matched signal transmission line. More specifically, in this example, the fixed contacts 13 A, 13 B and 14 A, 14 B together with a common potential layer 24 , which is formed on the back of the substrate 11 , form a microstrip line. Accordingly, the fixed contacts 13 A, 13 B and 14 A, 14 B can be used as a high-frequency transmission line for the on / off control of high-frequency signals. It can also be seen from FIGS. 1 and 4 that the movable plate 18 is provided with a plurality of through holes 18 A which are used in a manufacturing process as described with reference to FIG. 5. The method of manufacturing the integrated microswitch according to this invention will now be described with reference to FIG. 5.

An insulating layer 12 made of, for example, SiO ₂ is formed on the upper surface of a substrate 11 made of a semiconductor such as silicon or gallium arsenide. A common potential layer 24 is then formed from a metal film to form a microstrip line on the back of the substrate 11 ( FIG. 5A).

The next step is to deposit a metal film (for example of Rh, Zr) on the upper surface of the insulating layer 12, for example by sputtering, after which fixed contacts 13 A, 13 B, 14 A, 14 B, connections 13 A- 1 , 13 B - 1 , 14 A- 1 , 14 B- 1 , lower electrodes 22 A, 22 B, connections 23 A, 23 B, a base 15 'for the lever support arrangement and bases 21 ' for carrier plates 21 A by suitable masking and etching processes in the Metal film are formed. Furthermore, a lever support assembly 15 are of a predetermined height and carrier plates 21 A (where finally electrode portions 21 are formed) on the base 15 'and the base 21' by Ni plating is formed (FIG. 5B).

It is noted that the fulcrum arrangement 15 has an upper rib portion 15 has B as shown in Fig. 5C.

Next, a layer 25 of resin such as polyimide is formed on the surface of the substrate on which the fixed contacts 13 A, 13 B, 14 A, 14 B, the lower electrodes 22 A, 22 B, the lever support assembly 15 , the carrier plates 21 A and the others are formed on it. The resin layer 25 is formed so that its thickness is slightly greater than the height of the lever support assembly 15 and the support plates 21 A, and it is then partially removed by etching so that the lever support assembly 15 and the support plates 21 A are exposed, thereby creating a flat Area 25 A is formed. Furthermore, a film of conductive metal (such as Rh), which ultimately becomes the movable contacts 16 A, 16 B, is formed on this flat surface 25 A, followed by the formation of the movable contacts 16 A, 16 B by masking and etching processes ( Fig. 5C).

Thereafter, further resin is brought onto the flat surface, so that a further flat surface 25 B is created, which is coplanar with the movable contacts ( FIG. 5D).

In the next step, an insulating layer 26 (for example made of SiO ₂ ) is used, which serves to define the height of a gap between the lever support arrangement and the movable plate in order to cover the entire surface 25 B of the resin layer 25 and on that insulating layer 26 , a pad 18 C made of polysilicon or the like is formed with a thickness which is adequately large compared to the film thickness of the insulating layer 26 , and then a cover sheet 18 D made of aluminum (Al) is sputtered on the pad, the layered layers 18 C and 18 D represent a movable plate 18 . The movable plate 18 serves as a conductive plate 18 D due to the presence of the conductive aluminum layer.

A photoresist is then for example applied on the upper surface of the conductive layer 18 D, followed by forming a resist pattern in accordance with the shapes of the movable plate and those portions that will ultimately be the position retaining assemblies 19 and the electrode sections 21, after which those portions of the conductive Layer 18 D, in which the photoresist has been removed, are removed by a wet etching or ion milling process to form the shapes of the movable plate 18 , the position holding arrangements 19 and the electrode sections 21 . It should be noted that during this etching process, the through holes 18 A are formed by that part of the conductive layer 18 D and the base 18 C in an area which will form the movable plate 18 ( FIG. 4).

Once the movable plate 18 , the position holding arrangements 19 and the electrode sections 21 have been formed, those sections of the insulating layer 26 which are exposed due to the through openings and are not covered by the movable plate 18 , the position holding arrangements 19 and the electrode sections 21 are removed ( Fig. 5D).

A mask M1 is placed over those portions of the insulating layer 26, which is not the Mittenab cut 18 E (corresponding to the upper rib portion 15 B, the fulcrum arrangement 15 and its surrounding portions), as shown in Fig. 5E, and then the insulating layer 26 is the through holes 18 A formed in the movable plate 18 are etched away by wet or dry etching to define a gap G1 between the upper rib portion 15 B of the lever support assembly 15 and the movable plate 18 ( Fig. 5E).

Thereafter, the mask M1 is removed, and with the movable plate 18 , the position holding members 19 and the electrode portions 21 serving as masks, only the resin layer 25 is etched away to leave a cavity G2 between the movable plate 18 and the substrate 11 define ( Fig. 5F).

During removal of the insulating layer 26 remain the portions of the insulating layer below the electrode portions 21, so that the electrode portions 21 remain attached to the retaining plates 21 A, is supported so that the movable plate on the substrate.

With the formation of the cavity G2, an integrated microswitch as shown in FIGS. 1 to 4 is now completed. Note that the integrated microswitch can be manufactured by the technique of manufacturing semiconductor ICs, so that a plurality of integrated microswitches can be manufactured in one batch in an extremely small size entirely on a common substrate. The substrate 11 cut in the form of a chip has, for example, dimensions on the order of 0.5 mm for the width W, 1.0 mm for the length L and 0.3 mm for the thickness T. For information, it should be noted that the resin layer 25 used to form the cavity and the insulating layer 26 used to form the gap G1 are referred to as sacrificial layers.

It is clear here that the dimensions of the components shown in FIGS. 1 to 5 are exaggerated for a better understanding of the invention and do not represent the actual size. This also applies to the following drawings.

FIGS. 6 and 7 illustrate a second, modified embodiment of the integrated micro-switch of this invention according to claims 1 and 2. This embodiment shows an example in which an integrated micro-switch is provided with a circuit structure as shown in Fig. 8. In Figs. 6 to 8 like reference numerals are used for those components which correspond to components in Fig. 1 to 5.

In this embodiment, the fixed contacts 13 A and 14 A comprise continuous signal lines, as can be seen in FIG. 6, and the movable plate 18 is made of an electrical conductor and is connected via the electrode sections 21 to a point CM of common potential ( FIG. 8), so that the switching process can be carried out so that when contacting the movable plate 18 with the fixed contact 13 A, the fixed contact 13 A is in turn connected to the point cm common potential in order to transmit the signal from the terminal 13 A- 1 to Interrupt terminal 13 B- 1 , and that, conversely, when the movable plate 18 contacts the fixed contact 14 A, the fixed contact 14 A is in turn connected to the point cm common potential for signal transmission from the terminal 14 A- 1 to the terminal 14 B- 1 to interrupt.

This movable plate 18 is formed from a multilayer film made of metals. For this purpose, in the example shown in Figs. 5A to 5F manufacturing process, as soon as the resin layer 25 as shown in Fig. 5D has been formed by depositing Ti, Pd and Au were sequentially in this order on the entire surface 25 D A metallic multilayer film is formed on the resin layer 25 by sputtering, after which a Ni alloy plating with a thickness of, for example, about 20 μm is formed on the multilayer film. This thick Ni alloy plating layer is then coated with a photoresist to form a photoresist pattern. With this photoresist pattern as a mask, the unnecessary sections of the metal layer composed of Ti, Pd, Au and Ni are removed by, for example, ion milling in order to form the movable plate 18 , the swivel joints 19 and the electrode elements 21 . It will be appreciated that the moveable contacts on moveable plate 18 can be constructed from a capacitor structure that includes a metal for conducting alternating current and an insulating film. It should also be noted that through-holes 18 A are formed during this etching process which penetrate that part of the multilayer film in an area which will be the movable plate 18 .

Since the Ti layer can be easily removed by an HF-based chemical etchant, a mask M1 is placed over those parts of the multilayer film that are not the middle section 18 E (corresponding to the upper rib section of the overlay arrangement and its surrounding sections), and then the part is in this central portion 18 e existing Ti layer etched away by the through holes 18 A through which are formed in the movable platen 18, to separate the lever support assembly 15, the movable plate and 18 from each other. A gap G1 corresponding to the film thickness of the Ti layer is thus formed between the lever support arrangement 15 and the movable plate 18 . In addition, since it is preferable that the contact areas on the movable plate 18 are made of Pd, those parts of the Ti layer which correspond to the contact areas are also removed. In addition, it is clear that a resin layer of, for example, photoresist can be introduced as a sacrificial layer between the lever support arrangement 15 and the movable plate 18 , if desired.

FIGS. 9 to 11 illustrate a third embodiment of the integrated micro-switch of this invention according to claims 1 and 2. This embodiment shows the construction of an integrated micro-switch, the switching circuit 11 is shown suitable for forming a in Fig.. In this switching arrangement, a signal source SU is connected to the terminal 13 B- 1 , so that the switching operation between a position in which a signal is taken from the signal source SU and the other position in which such a signal transmission is interrupted is carried out can be. Furthermore, it should be noted that in this circuit the connection 14 B- 1 is connected to a point cm common potential, so that in the position in which the signal transmission is interrupted, the connection 14 A- 1 via the movable contact 16 B is connected to the point cm common potential to prevent any escape of the signal from the signal source SU to the terminal 14 A- 1 .

For this purpose, the fixed contacts 13 A and 14 A are connected via a wiring conductor 17 ( Fig. 9), so that the rocking movement of the movable plate 18 alternately the fixed contacts 13 A and 13 B on the one hand and the fixed contacts 14 A and 14 B on the other hand, switches between the on (or off) position and the off (or on) position, whereby the signal from the signal source SU between the ON state for output at terminal 14 A- 1 and the OFF state for the interruption of the signal can be switched.

The embodiment shown in FIGS . 9 through 11 is provided with several features or improved functions by the provision of the wiring conductor 17 , and such an integrated microswitch can still be manufactured through the same manufacturing process as that described with reference to FIGS. 5A to 5F getting produced. It is also clear that other elements such as resistors and capacitors can be similarly mounted and integrated on the same single substrate to complete a switch.

FIGS. 12 and 13 illustrate a fourth embodiment of the integrated micro-switch of this invention according to claims 15 to 17 represent, in which supply lines comprise the fixed contacts Signalübertra which are impedance matched to a predetermined impedance. This embodiment shows an example in which the fixed contacts 13 A, 13 B and 14 A, 14 B are composed of coplanar signal transmission lines, which is a type of strip line. More specifically, a conductor can be defined on opposite sides of each of the fixed contacts 13 A, 13 B and 14 A, 14 B are arranged coplanar signal transmission lines 27 A and 27 B, which have a common potential. In this case, the common potential layer 24 deposited on the back of the substrate 11 need not necessarily be present.

Furthermore, in this embodiment, the coplanar microstrip line is shown so that it by forming an additional thicker insulating layer 12 '( Fig. 13) on the insulating layer 12 and forming the fixed contacts 13 A, 13 B and 14 A, 14 B and the conductor 27 A and 27 B can be produced with common potential on the additional insulating layer 12 '.

It should also be noted in this embodiment that the lever support arrangement 15 is formed on this additional insulating layer 12 ', while the lower electrodes 22 A, 22 B are formed on those sections of the insulating layer 12 which are formed by forming recesses 12 ' A in the insulating layer 12 'exposed.

Figs. 14 to 16 illustrate a modified form of the integrated micro-switch of this invention is provided with upper electrodes 28 A, 28 B is provided as claimed in claim 3, and a fifth and a sixth embodiment of the integrated micro-switch of this invention according to claim 13, wherein the movable contacts 16 A and 16 B are configured so that they allow elastic deformation. In these embodiments, the upper electrodes 28A , 28B are formed on the upper surface of the movable plate 18 , so that attractive forces can be generated between the upper electrodes 28A , 28B and the respective lower electrodes 22A , 22B to move movable plate 18 in both directions in a rocking motion by separately supplying the upper electrodes 28 A and 28 B with a driving voltage via the respective one of the electrode sections 21-1 , 21-2 and the rotary joints 19-1 , 19-2 . While in Fig. 14, the movable plate 18 is illustrated so that it has no Durchgangsöffnun gene 18 A, however, a number of openings on the movable plate passing through the passage 18 A is formed.

These embodiments are further characterized by the construction in which as shown in FIGS. 15 and 16, the movable contacts 16 A and 16 B are formed as portions with free end, the longitudinal (gen in the direction from right to left in the Zeichnun ) protrude from the movable plate 18 from its opposite ends, so that the protruding movable contact sections can be moved in contact with the fixed contacts 13 A, 13 B or 14 A, 14 B.

The movable contacts 16 A and 16 B are flexible in that they are extended beyond the ends of the movable plate 18 . Because of this flexibility, it is clear that when the movable contacts 16 A and 16 B are moved in contact with the fixed contacts 13 A, 13 B and 14 A, 14 B, they are elastically deformed before contacting the fixed contacts, which leads to more or less sliding or rubbing movements of the movable contacts along the fixed contacts. Therefore, it can be seen that these embodiments are directed to an arrangement designed based on the expectation that such a sliding movement will provide a so-called self-cleaning operation. The fifth embodiment of Fig. 15 shows the structure in which the movable contacts protrude straight from the upper surface of the movable plate, while the sixth embodiment of Fig. 16 shows the structure in which the movable contacts over the upper surface of the movable plate Protect plate 18 and then run around the end surface thereof before protruding from the lower surface of the plate.

A method of manufacturing the integrated microswitch having the structure shown in FIG. 15 will be described with reference to FIG. 17. An additional insulating layer 12 'formed, for example, from SiO _{2 is} formed on the semiconductor substrate 11 , which had been coated with an insulating layer 12 containing, for example, SiN, after which solid contacts 13 A, 13 B and 14 A, 14 B are formed on the insulating layer 12 ' and recesses 12 'A in the insulating layer 12' be formed to cover the insulating layer 12 to expose the bottom surfaces of recesses 12 'A. Lower electrodes 22 A, 22 B, a base 15 'for the lever support assembly and bases 21 ' for support plates 21 A are formed on the exposed surfaces of the insulating layer. Furthermore, a lever support arrangement 15 and carrier plates 21 A are formed up to a predetermined height on the base 15 'or the bases 21 ' by, for example, Ni plating ( FIG. 17A).

Next, a layer 25 of resin such as polyimide is formed by applying it to the exposed surfaces of the insulating layer 12 to create a flat surface. The resin layer 25 is then etched back so that the upper surface of the fulcrum assembly 15 is exposed to thereby form a flat surface 25 A which is flush with the insulating layer 12 '. Then, an insulating layer 26 made of, for example, poly-Si, which can be easily etched, is formed on the resin layer 25 , which will be a first sacrificial layer, and the insulating layer 12 '. An insulating multilayer film is formed by depositing SiN, SiO ₂ and SiN in succession in the order mentioned by sputtering on the insulating layer 26 . Then, a photoresist pattern is placed as a mask over the insulating multilayer film, after which the movable plate 18 , the position holding assemblies 19 and the electrode portions 21 are formed by dry etching. This layered structure is less susceptible to warping due to balanced stresses and thus allows the creation of a movable plate 18 with higher strength. It should be noted that this dry etching also forms a number of the through openings 18 A shown in FIG. 4 and passing through the movable plate 18 ( FIG. 17B).

Next, the flat surface 25A and the surface of the movable plate 18 are covered with a masking film to form a masking pattern, and only those portions of the insulating layer 26 which are below the central portion of the movable plate 18 and the position holding assemblies 19 (not shown) in Fig. 17 are located) and have not been covered with the mask pattern, are represented by the through holes 18 a (see. Fig. etched 4) therethrough for a gap G1 to define between the movable plate 18 and the lever support assembly 15, which thus by the gap G1 are separated from each other. Thereafter, the masking film is removed and a resin, such as a photoresist, is applied to the surface 25 A to create a resin layer 29 which will become a second sacrificial layer. The resin layer 29 is then etched back to expose the upper surface of the lever support assembly 15 in order to form a flat surface 29 A (FIG. 17C).

Metallic materials are layered in the order Pd-Mo-Au on the surface 29 A of the resin layer 29 , which is flush with the movable plate 18 . Then only those sections of the resulting multi-metal layer, which ultimately become the movable switch contacts 16 a and 16 B and the upper electrodes 28 A, 28 B, are coated with Ni plating. With this Ni plating layer as a mask, those unnecessary parts of the multi-metal layer are then removed by ion milling in order to form the movable contacts 16 A and 16 B and the upper electrodes 28 A, 28 B ( FIG. 17D).

Next, the resin layers 25 and 29 are removed by etching to define a cavity G2 between the movable plate 18 and the substrate 11 , whereby the integrated microswitch shown in Fig. 15 is completed ( Fig. 17E).

Fig. 18 illustrates a seventh embodiment which is a modified form of the embodiment shown in Figs. 14 to 16. This embodiment shows the integrated microswitch with the structure in which a lever support arrangement 15 , fixed contacts 13 A, 13 B and 14 A, 14 B and lower electrodes 22 A, 22 B on the flat surface of a substrate 59387 00070 552 001000280000000200012000285915927600040 0002010031569 00004 5926811 with the interposition of an insulating layer 12 between these elements and the substrate and in which on the movable plate 18 upper electrodes 28 A, 28 B and movable contacts 16 A, 16 B are attached.

The movement of the movable plate 18 is caused by the electrostatic driving force generated by a voltage applied between the lower electrodes 22 A, 22 B and the upper electrodes 28 A, 28 B. The structure of this embodiment is characterized in that, regardless of whether the substrate 11 is made of a conductor, semiconductor or insulator, it is possible to build an integrated microswitch. The lever support assembly 15 and the movable plate 18 are formed from an insulator.

Fig. 19 illustrates an eighth embodiment is formed in a lever support assembly 15 through the substrate 11 itself. More specifically, in this case, a semiconductor substrate made of, for example, Si or GaAs is used as the substrate 11 , which is subjected to an etching process to form the fulcrum arrangement 15 , after which the insulating layer 12 is formed, on which fixed contacts 13 A, 13 B and 14 A are formed , 14 B and lower electrodes 22 A, 22 B are formed. The construction of the movable plate is the same as that shown in FIG. 18.

FIGS. 20 and 21 show a ninth embodiment of the integrated micro-switch of this invention according to claim 4 is which is characterized by the construction of the drive assembly for driving the movable plate 18.

More specifically, it is characterized in that a plurality of lower electrodes 22A-1, 22A-2 and 22B-1, 22B-2 on the opposite sides of the lever support assembly 15 face the corresponding opposite pivot end portions of the movable plate 18 on the substrate 11 the arrangement is such that when a driving voltage is applied between the lower electrodes 22 A- 1 and 22 A- 2 corresponding to one of the opposite swing end portions of the movable plate 18 , an attractive force is applied to that corresponding one swing end, and when such driving voltage is switched to the lower electrodes 22 B- 1 and 22 B- 2 corresponding to the other swing end, an attractive force is applied to the other swing end to thereby generate the rocking motion.

The process of applying an attractive force to the movable plate 18 will be described with reference to FIG. 21. This embodiment makes use of the technology of the electrostatic generator disclosed in the work "Electrostatic Levitation" by T. Higuchi, Measuring and Controlling, Volume 38 , No. 2, February 1999, pages 101-104. However, it should be noted that this publication is concerned with electrostatic levitation and transport mechanisms, but does not disclose or suggest the application of the technology to the drive arrangement for performing a rocking motion.

Fig. 21 is a cross-sectional view taken along line 21-21 of Fig. 20. It can be seen that the movable plate 18 is located opposite the lower electrodes 22 B- 1 and 22 B- 2 . If it is assumed that the movable plate 18 is conductive, electrostatic capacitances C1 and C2 are generated between the lower electrode 22 B- 1 and the movable plate 18 and the lower electrode 22 B- 2 and the movable plate 18 , respectively.

When a _DC driver voltage V _{DC is applied} between the lower electrodes 22 B- 1 and 22 B- 2 , electric charge is accumulated in both electrostatic capacitances C1 and C2, thereby stabilizing the potential of the movable plate 18 to a potential that is about the average corresponds to the voltage V _DC applied between the lower electrodes 22 B- 1 and 22 B- 2 .

Since the electrostatic capacitances C1 and C2 are charged, electrostatic attraction forces occur between the lower electrode 22 B- 1 and the movable plate 18 and between the lower electrode 22 B- 2 and the movable plate 18 .

It is clear that when a drive voltage is applied between the lower electrodes 22 A- 1 and 22 A- 2 corresponding to the opposite swing end, absolutely the same process as discussed above occurs.

It is therefore clear that the movable plate 18 can be pivoted by alternately applying the drive voltage V _DC between the lower pair of electrodes 22 A- 1 and 22 A- 2 and between the lower pair of electrodes 22 B- 1 and 22 B- 2 .

Regarding the material from which the movable plate 18 is made, it should be noted that while it was described in the above example as being made of a conductive material, there is no particular limitation on the material. Even the movable plate 18 , which is made of an insulating material, can be rocked. For details, reference is made to the aforementioned publication "Measuring and Controlling", Volume 38 , No. 2, February 1999, pages 101-104.

While in the embodiment shown in Fig. 20, a pair of lower electrodes 22 A- 1 and 22 A- 2 or 22 B- 1 and 22 B- 2 are shown as being provided for each of the opposite swing end portions of the movable plate 18 , the number is of the lower electrodes are not limited to a pair, but can be three or more. In this case, a drive voltage can be applied to each pair of lower electrodes, and the application of this drive voltage can be switched from one swing end to the other swing end to thereby rock the movable plate 18 .

According to the embodiment shown in FIG. 20, in contrast to the embodiments shown in FIGS. 1 or 6, there is no need to apply voltage to the movable plate 18 . Therefore, there is no need to provide the position holding assemblies 19 with electrical wiring. It is thus clear that this offers the advantage of simplifying the manufacturing process compared to the integrated microswitch shown in FIG. 1 or 6. In addition, this offers the further advantage that the liability can be improved since no electrical wiring is required for the rotary joints comprising the position holding arrangements 19 .

Figs. 22 to 29 represent a tenth and an eleventh embodiment of the integrated micro-switch of this invention according to claim 11. The integrated micro switch according to claim 11 is comprise by the structure of the position retaining assemblies 19, the support rods 18 B integral with the movable plate 18 are formed, and on the substrate 11 mounted bearing arrangements 30 for receiving the holding rods 18 B passing through them.

Each of the bearing assemblies 30 includes a support plate 31 that rises from the planar surface of the substrate 11 and an arc 32 provided on the support plate 31 to define a cavity 30 A that is surrounded by the support plate 31 and the arc 32 , for receiving the support rod 18 B passing through it to hold the movable plate 18 in position. While the manufacturing methods of the support bar 18 B, the support plate 31 and the sheet 32 are described below, in the tenth embodiment shown in FIG. 22, the support plate 31 and the sheet 32 are formed of conductive material, and also the movable plate 18 and the Carrier rod 18 B are made of a conductive material.

It is clear that the movable plate 18 can be struck with a voltage on the carrier plates 38 . The rocking movement of the movable plate 18 can be carried out by applying a pole of the drive voltage to the movable plate 18 and by alternately applying one of the lower electrodes 22 A and 22 B to the other pole of the drive voltage.

In the tenth embodiment shown in FIGS. 22 and 23, the movable plate 18 and the support rod 18 B are made of a conductive material so that an attraction force by applying an electric field between the movable plate 18 and either the lower electrode 22 A or 22 B can be generated. However, in the eleventh embodiment shown in Fig. 24, a pair of lower electrodes 22 A- 1 , 22 A- 2 and another pair of lower electrodes 22 B- 1 , 22 B- 2 are on the substrate 11 for one or the other the opposite pivoting end portions of the movable plate 18 are arranged so that a driving voltage can be applied alternately between the lower electrodes 22 A- 1 and 22 A- 2 and between the lower electrodes 22 B- 1 and 22 B- 2 to the movable As in the ninth embodiment shown in FIG. 20, the plate 18 is rocked.

It can be seen that the eleventh embodiment with the drive mechanism shown in FIG. 24 eliminates the need to apply voltage to the movable plate 18 , and thus has the advantage that the movable plate 18 is made of any desired material including an insulator or Semiconductor and can not necessarily be formed from a metallic material.

In the construction of the embodiments shown in Figs. 22 to 24, the movable plate 18 is mainly supported by the lever support assembly 15 for the rocking motion, and further the support rods 18 are supported by the bearing assembly 30 against displacement in position so that the movable plate 18 is not subjected to any external counterforce and can therefore be rocked by a small force of attraction. In addition, even while the movable contacts 16 A and 16 B are in contact with the fixed contacts 13 A, 13 B and 14 A, 14 B, they can be kept in their stable contact state without counteracting force from the movable ones and separate fixed contacts from each other.

A method (claim 24) for the production of the integrated microswitch shown in FIGS. 22 to 24 will now be described with reference to FIGS. 25 to 29. Here, the description of the method concentrates primarily on the support rods 18 B and the bearing arrangement 30 .

A substrate 11 made of, for example, silicon is formed, after which a common potential layer 24 and an insulating layer 12 made of SiO _{2 are formed} on the rear side and the front side of the substrate 11 ( FIG. 25A).

The next step is to deposit a metallic layer on the upper surface of the insulating layer 12, for example by vapor deposition, after which metallic layer sections 33 , which will be bases for carrier plates 31 (see FIGS. 23 and 24), at those locations on the metallic layer are formed where the carrier plates 31 are to be formed, and lower electrodes 22 A, 22 B and fixed contacts 13 A, 13 B and 14 A, 14 B are formed, for example, by means of an etching process using a photoresist mask ( FIG. 25B). It should be noted that, according to FIG. 25B, a metallic base section 15 ', on which the lever support arrangement 15 will be formed, is formed behind the metallic layer sections 33 .

Then the metal layer is masked, for example with a photoresist layer, so that only the metal layer sections 33 for the carrier plates and the metallic base section 15 'for the base of the lever support arrangement are exposed, after which metal plating layers are formed on the metal layer sections 33 and the metal layer section 15 ', which the carrier plates 31 which form the bearing assemblies 30 and become the fulcrum assembly 15 ( Fig. 25C).

Next, a first sacrificial layer 34 of photoresist is formed to the same height as the support plates 31 and the lever support assembly 15 and is flush with them. Then, a metal layer is formed over the entire surface of this first sacrificial layer 34 by, for example, vapor deposition, after which the metal layer is etched to leave a predetermined pattern, thereby forming the movable contacts 16 A and 16 B ( Fig. 25).

After the movable contacts 16 A and 16 B have been formed, a second sacrificial layer 35 made of resinous material is applied to those surfaces of the first sacrificial layer 34 and the carrier plates 31 in areas where the movable contacts 16 A and 16 B are not present same height as those movable contacts so that a flat surface is obtained which is flush with the movable contacts, after which a metal layer 36 is formed on the entire flat surface. The upper surface of this metal layer 36 is then covered with a thick film of photoresist material to form a thick film photoresist pattern mask for the movable plate 18 . Then the rest of the metal layer 36 which is not part of the movable plate 18 and the supporting rod formation 18 B, is removed, for example by ion milling, to the movable plate 18 and the support rod to form 18 B, the layer of the metal produced 36 are. During this step, two openings 36 A, 36 B are formed which penetrate the metal layer 36 at locations which lie opposite the two carrier plates 31 (cf. FIGS. 25, 26A and 28). These openings are used to form arch pillars. It is to be noted that also the unnecessary peripheral portions of the metal layer 36 are removed to the desired shapes of the movable plate 18 and the support rods 18 to form B.

With the metal layer 36 formed in this way as a mask, openings 35 A, 35 B are also formed which penetrate the second sacrificial layer 35 . The peripheral sections of the second sacrificial layer that are not required are likewise removed. It should be noted that the carrier plates 31 and the first sacrificial layer 34 are exposed through the aligned openings 36 A, 35 A and 36 B, 35 B ( FIG. 26A).

After the stage shown in FIG. 26A, a photoresist layer 37 is again deposited on the entire surface, ie the surface of the metal layer 36 , those surfaces of the first sacrificial layer 34 which are exposed via the openings 36 A, 35 A and 36 B, 35 B, and that is exposed to the surfaces of the first sacrificial layer 34 surrounding the outer periphery of the movable plate 18 . This photoresist layer 37 is formed as a thick film with a thickness of approximately that of the movable plate 18 ( FIG. 26B).

The photoresist layer 37 is then such as the one 36 (shape of the movable plate 18 and the support rods 18 B) exposed to a pattern of the same shape of the metal layer which lie around those portions of the photoresist layer 37 to be removed over the metal layer 36th As a result, the metal layer 36 is exposed within the interior areas delimited by the photoresist layer 37 ( FIG. 26C).

Next, the thus exposed upper surfaces of the metal layer 36 are coated with a metal plating to form a plating layer 38 , the thickness of which is approximately equal to that of the desired movable plate 18 . The movable plate 18 and the support rods 18 B are thus constructed from this plating layer 38 and the metal layer 36 . Furthermore, during the exposure of the thick film photoresist layer 37 , those parts of the photoresist film 37 which had filled the openings 36 A, 35 A and 36 B, 35 B are provisionally provided with through-openings 37 A, 37 B which extend as far as the carrier plates 31 so that during the formation of the plating layer 38 arch pillars 38 A, 38 B are formed which protrude from the carrier plates 31 ( FIG. 26D).

A third sacrificial layer 39 of photoresist is in turn deposited on the upper surfaces of the photoresist film 37 and the plating layer 38 to form a photo pattern mask, which in turn is used to form openings 39 A, 39 B in the third sacrificial layer 39 , which in FIG Connected to the arch pillars 38 A, 38 B, after which a metal layer 41 is formed, for example, by vapor deposition on the upper surface of the third sacrificial layer 39 and the upper surfaces of the arch pillars 38 A, 38 B, which are exposed within the openings 39 A, 39 B. ( Fig. 27A).

Then the upper surface of the metal layer 41 is covered with a fourth sacrificial layer 42 made of photoresist, in which an elongated slot 42 A is formed which spans the openings 39 A and 39 B ( FIG. 27B).

The formation of the elongated slot 42 A exposes the metal layer at the bottom of the elongated slot 42 A. In this state, the top surface of the metal layer 41 is plated with metal within the elongated slot 45 A to form a metal plating layer 43 ( Fig. 27B).

When the metal plating layer 43 is formed on the metal layer 41 , the fourth sacrificial layer 42 is removed, and the metal layer 41 is also simultaneously removed by ion milling. When this is done, the plating layer obviously serves as a mask so that the portion of the metal layer 41 except for the area covered with the plating layer 43 is removed. Furthermore, the third sacrificial layer 49 , the photoresist film 37 , the second sacrificial layer 35 and the first sacrificial layer 34 are removed by, for example, etching, whereby the movable plate 18 , the support rods 18 B and the arches 32 are produced, as shown in FIG. 27C. More specifically speaking, the movable plate 18 and the support rods 18 B of the plating layer 38 and the metal layer 36 built up, while the sheets 32 from the formed of the plating layer 38 pillars 38 A, 38 B, the metal layer 41 and the plating layer 43 put together. It should also be noted that the arch 32 and the associated support plate 31 are formed as a one-piece unit, which forms a bearing arrangement 30 , the corresponding support rod 18 B extending through the cavity defined by the arch 32 .

As is apparent from the manufacturing process described above, the dead weight of the movable plate 18 is mainly supported by the lever support assembly 15 , and positional displacement and removal from the substrate 11 are prevented due to the support rods 18 B which extend through the bearing assembly 30 .

Since the carrier plates 31 , the carrier rods 18 B and the movable plate 18 are mainly composed of a plating layer with conductivity, it is possible to rock the movable plate 18 by placing one pole of a driving voltage on the carrier plates 31 and the opposite pole of the driving voltage applied to one of the lower electrodes 22 A and 22 B and the connection is alternately switched so that electrostatic attractive forces between the movable plate 18 and either one or the other of the lower electrodes 22 A and 22 B are generated.

Figs. 30 to 32 represent a twelfth embodiment of the integrated micro-switch of this invention according to claim 5. The integrated micro-switch according to claim 5 is characterized by the structure with which the movement of the movable plate 18 is performed by a magnetic force generated by planar Coils is generated.

For this purpose, planar coils 45 A and 45 B are formed on the movable plate 18 at positions that are symmetrical about the pivot axis thereof, as shown in FIGS. 30 and 31. The arrangement is such that when an excitation current is passed through one of the planar coils 45 A and 45 B, a repulsive force (or attractive force) is generated in response to an external magnetic field generated by permanent magnets 46 A and 46 B, as shown in Fig. 31, whereby the movable contacts 16 A and 16 B in and out of contact with the fixed contacts 13 A, 13 B and 14 A, 14 B are moved.

While the embodiment of FIG. 31 shows the arrangement in which an excitation current is separately applied to one of the planar coils 45 A and 45 B, it should be noted that in the thirteenth embodiment shown in FIG. 32, the planar coils 45 A and 45 B can be wound in opposite directions and connected in series so that the pair of planar coils 45 A and 45 B generate magnetic fields in opposite directions when supplied with excitation current by a pair of terminals 21 A- 1 and 21 A- 2 . Accordingly, once one of the planar coils 45 A and 45 B generates a repulsive force or an attraction force against the permanent magnets 46 A and 46 B, the other of the planar coils generates an attraction force or a repulsive force against the permanent magnets, so that they double the torque deliver.

With this structure, the direction of pivoting the movable plate 18 can be arbitrarily controlled between the forward and reverse directions by reversing the direction of passage of the electric current supplied from the terminals 21 A- 1 and 21 A- 2 . Therefore, it is clear that the wiring has to be for supplying power to the planar coils 45 A and 45 B in each case only simply provided for each of opposite sides of the movable plate 18 in the embodiment shown in Fig. 32 the thirteenth embodiment, and therefore only one position maintaining assembly 19 must be provided on each of the opposite sides, which leads to a simplification of the structure.

A known multi-layer connection technique is used at the crossing points of the wound Coils used to prevent short circuits.

The Figs. 33 and 34 illustrate a fourteenth embodiment of the integrated micro-switch of this invention according to claim 6. The integrated micro switch shown in FIGS. 33 and 34 is a modified form of that shown in Figs. 30 to 32, driven by planar coils microswitch .

The structural feature of this embodiment is that individual excitation coils are manufactured independently of one another in the form of a tube or a solenoid and are mounted and fastened in holes which are formed in a substrate by means of resinous material. The surface of the substrate in which the excitation coils or solenoids are buried is then subjected to a smoothing treatment, after which solid contacts are formed on the smoothed surface, and further the movable plate 18 is formed and held for a rocker-like movement around a magnetically driven integrated one Finish microswitch.

While the embodiment of FIGS. 33 and 34 shows an example in which the movable plate 18 is formed from a magnetic material, it is clear that a piece or pieces of magnetic material, preferably ferromagnetic material, can be attached to the movable plate 18 to create a magnetic attraction as in the embodiment shown in Figs. 38 and 39.

A method of preparation is described of 33 and 34 Darge easily integrated micro switch shown in FIGS. Referring to Figs. 35 to 37.

An auxiliary substrate 11 A is formed, as shown in Fig. 35A. The additional substrate 11 A can be an insulating plate or a conductive plate made of, for example, copper.

An intermediate panel 11 B 11 A is deposited on one side of the auxiliary substrate or mounted on it, to a substrate 11 complete. The intermediate plate 11 B may also be an insulating plate or a conductive plate. The additional substrate 11 A need only have a moderate mechanical strength and is not subject to any particular restrictions with regard to the thickness. However, the thickness of the intermediate board 11 B is selected so that it is not less than the coil length (length of the magnetic core 62 A) of the excitation coils 62 , which will be described later. If the length of the magnetic core 62 A is chosen to be 0.6 mm as an example, the thickness of the intermediate panel 11 B is selected in the order of 0.7 to 0.8 mm.

A set of holes 63 passes through the intermediate panel 11 B at predetermined intervals (determined depending on the length of the movable plate 18 ). While the drawings illustrate the steps of manufacturing an integrated microswitch, it should be understood that a plurality of sets of such holes 63 are actually formed to produce many integrated microswitches at the same time. The bores 63 may already before the intermediate board 11 B are formed by putting before the intermediate plate 11B with them by means of adhesive 11 A is secured passing through holes 63 on the auxiliary substrate.

Alternatively, the additional substrate 11 A may be formed of copper, and a layer of copper may be deposited, for example, by a plating process on one side of the additional substrate 11 A made of copper with a thickness of 0.65 to 0.70 mm, around an intermediate panel 11 B to build. In the case in which the intermediate plate 11 B is formed by plating, can the intermediate plate 11 B extending through bores 63 are formed by the photolithography technology. The holes 63 are oversized in terms of diameter so that a certain gap between the outer circumference of the excitation coil 62 and the inner wall of the bore 63 is defined.

Resin-like material is poured into the corresponding holes 63 with excitation coils 62 inserted into the holes 63 to fill them, in particular the gap 63 A (see FIGS. 35B and 37), and in addition the same resin-like material is applied to the surface of the additional panel 11 B applied to form a resin layer 64 having a desired thickness (Fig. 35B).

When the resin layer 64 has solidified, the protruding parts of the coil electrodes 62 C and further the surface of the resin layer 64 are processed, followed by mirror polishing of the surface of the resin layer ( Fig. 35C).

The coil electrodes 62 C are thus exposed and become flush with the mirror-polished surface of the resin layer 64 . On this surface, a metal film is deposited, and then a photolithography technology is used to form 62 C in contact with the coil electrodes, thereby to provide a power supply path for the excitation coil 62, while the wiring conductors 65 and electrodes 66 (Fig. 33) fixed contacts 13 A, 13 B and 14 A, 14 B and connection sections 13 A- 1 , 13 B- 1 , 14 A- 1 , 14 B- 1 and a base 15 'for the lever support arrangement 15 and bases 21 ' for carrier plates 31 be formed from a conductive layer.

The next step is a mask made of photoresist, for example, via these wiring conductors 65 , electrodes 66 , fixed contacts 13 A, 13 B, 14 A, 14 B, connecting sections 13 A- 1 , 13 B- 1 , 14 A- 1 , 14 B- 1 and base regions 15 'and 21 ' of the conductive layer and to penetrate those parts of the mask with openings in which the lever support arrangement 15 and the carrier plates 31 are to be formed, around the base regions 15 'and 21 ' of the conductive layer regions exposed in the openings, after which a lever support assembly 15 and carrier plates 31 are formed on those exposed base regions 15 'and 21 ' of the conductive layer by plating ( Fig. 35D).

After forming the fulcrum assembly 15 and the support plates 31 , the same process as that described above with reference to FIGS. 25A to 29 can be used to form a movable plate and support rods 18 B for the movable plate 18 to form movable contacts 16 to form a 16 B on the opposite Schwenkendabschnitten the movable plate 18, and finally to form sheets 32 via the support plates 31, 38 and 39 complete a magnetic table-driven integrated micro switch shown in FIGS..

It should be noted here, however, that the process in this embodiment differs from that described above with reference to FIGS. 25A to 29 in that magnetic material is used as the material from which the movable plate 18 is formed. An example of a suitable magnetic material for the purpose of this invention is an iron-nickel alloy.

In the structure of the magnetically-driven integrated micro switch as shown in FIGS. 38 and 39, the application generates an excitation current to one of the excitation coil 62 a magnetic field which acts for its part, that one of the free pivoting ends of the bewegli chen plate 18 to the energized exciting coil 62 toward is attracted while one of the movable contacts 16 A and 16 B brings either the fixed contacts 13 A and 13 B or the fixed contacts 14 A and 14 B in conductive connection.

The excitation coil 62 , which is composed of windings which are wound around a magnetic core 62 A, generates a magnetic field, the strength of which is greater than that of the planar coil shown in FIGS. 30 to 32. This has the advantage that the movable contact 16 A or 16 B can be contacted with the fixed contacts 13 A, 13 B or the fixed contacts 14 A, 14 B with increased contact force, thereby maintaining a stable contact state.

FIGS. 38 and 39 illustrate a fifteenth embodiment of this invention in which the movable plate 18 is made of a non-magnetic material and are secured to the pieces 67 of magnetic material for magnetic attraction. It should be noted that this construction, in which the magnetic attraction pieces 67 are made separately from their movable plate 18 , offers the advantage that even the use of such material would be possible which, on the other hand, would not be used as a movable plate 18 by means of a sputtering process could be molded, and in particular the use of a material with high magnetic permeability, whereby an integrated microswitch with strong magnetic attraction can be created.

In addition, the contact pressure between the contacts can be further increased by magnetizing the magnetic attraction pieces 67 beforehand with the opposite NS polarities along the direction of their thickness. In particular, a pair of pieces 67 for magnetic attraction can be mounted on the movable plate 18 near the opposite ends with respect to their pivot center, with the N-polarity sides of both pieces facing upward. With this arrangement, the two pieces of magnetic attraction 67 can be excited differently to generate magnetic fields of opposite polarity, so that an attractive force is generated at one of the pivoting end portions of the movable plate 18 while a repulsive force is generated at the other end. It is thus clear that the attraction and repulsion forces work together to provide an approximately two-fold increase in contact pressure compared to the embodiment shown in FIGS. 33 and 34.

Fig. 40 shows a sixteenth embodiment of the integrated microswitch of this invention according to claim 18. This embodiment shows an example in which a movable plate is formed by micromachining technology so that it is cantilevered mounted, while an excitation coil 62 with the in Fig. 36 shown structure is embedded in a substrate 11 opposite the pivotable free end of the movable plate 18 .

In this embodiment, the movable plate 18 is made of a conductive magnetic material, the arrangement being such that the electrical connection between the electrode regions 13 A- 1 and 14 A- 1 is made by moving the pivotable free end of the movable plate 18 in and is made out of contact with the fixed contact 13 and interrupted.

This embodiment has the advantage of a simple structure, which leads to improved producibility. The further advantage in this embodiment is that the excitation coil 62 , which is composed of windings wound around a magnetic core 62 A, generates a strong magnetic attraction. This strong magnetic attraction provides sufficient force to resiliently bend the cantilevered movable plate 18 even though it has a desired increased mechanical strength. Accordingly, it is clear that this structure overcomes the disadvantages of the prior art discussed with reference to FIGS. 49 and 50.

Fig. 41 illustrates another embodiment of the integrated microswitch of this invention according to claim 19. This embodiment shows an example in which a movable plate 18 is formed by micromachining technology so that it is cantilevered while cantilevered while a fixed contact 13 on one other boom element 68 is supported so that it can be contacted by the free end of the movable plate 18 . In this case, the cantilever element 68 holding the fixed contact may be a conductor made of a non-magnetic material. The arrangement is such that when the movable plate is moved into contact with the fixed contact 13 , the movable plate 18 presses on the fixed contact adhesive member 68 to bend the latter slightly, thereby causing a sliding movement between the movable contact Plate 18 and the fixed contact 13 is caused to create a self-cleaning process between the contacts.

FIGS. 42 and 43, an eighteenth embodiment of the integrated micro-switch of this invention according to claim 7. The integrated micro switch according to claim 7 shows an arrangement, are arranged in the excitation coils 62 above the top surface of the movable plate 18.

An integrated microswitch is formed on the substrate 11 , which is similar to that shown in Figs. 22 and 23 except that the drive arrangement for the movable plate is modified. More specifically, a second substrate 72 is supported by pillars 71 above the substrate 11 . As in the structure described above with reference to FIGS. 33 and 34, the second substrate 72 is composed of an additional substrate 72 A and an intermediate panel 72 B for receiving the excitation coils 62 in it to achieve increased strength. The intermediate panel 72 B is penetrated by bores 73 into which the excitation coils 62 are inserted. Resin-like material is then poured into the bores 73 to fill the gaps defined between the excitation coils 62 and the bores 73 , thereby securing the excitation coils 62 to the substrate 72 . At the same time, resinous material is also applied to the exposed surfaces of the excitation coils 62 and the intermediate panel 72 to form a resin layer 74 , which is then mirror polished, after which wiring conductors 65 are formed on the mirror polished surface of the resin layer 74 ( Fig. 43).

The pillars 71 are formed from conductors to which the wiring conductors 65 are connected, as a result of which the excitation circuits of the excitation coils 62 are electrically connected via the conductive pillars 71 to the electrodes 66 arranged on the surface of the first substrate 11 .

It should be noted that the arrangement shown in FIGS. 42 and 43, in which the excitation coils 62 are arranged toward the top of the movable plate 18 , is a separate formation of the first substrate 11 and the second substrate 72 provided with the movable plate 18 provided with the excitation coils 62 and having preformed pillars 71 protruding therefrom, whereby the two substrates can be easily assembled to complete an integrated microswitch. This results in simple manufacture.

Fig. 44 illustrates a nineteenth embodiment of the integrated micro-switch of this invention according to claim 20 which is a multi-contact package switch.

This embodiment proposes a movable plate 18 of polygonal shape, using a regular trapezoidal shape as an example in the illustration. A lever support assembly 15 protrudes from a substrate 11 at a location that substantially corresponds to the center of the movable plate 18 . The movable plate 18 has position holding assemblies 19 extending therefrom substantially at the center of each of the four sides of the movable plate 18 . While the upper end of the lever support assembly 15 is shown as hemispherical, it is clear that it can be of any configuration that allows rocking movements of the movable plate 18 in four directions. Four triangular upper electrodes 28 A, 28 B, 28 C, 28 D are formed on the upper surface of the movable plate 18 , one at each of its four corners. Movable contacts 16 A, 16 B, 16 C, 16 D are formed on the underside of the movable plate 18 at its four corners. The movable contacts 16 A to 16 D are designed so that they bring corresponding pairs of fixed contacts 13 A and 13 B, 13 A 'and 13 B' and 14 A and 14 B selectively into and out of conductive connection. The fixed contacts 14 A 'and 14 B' are already connected directly. It can be seen that a signal input to one of the fixed contacts 13 A, 13 A 'by moving the corresponding one of the movable contacts 16 A, 16 B and 16 C into contact with the corresponding one of the fixed contacts 13 A, 13 B, 13 A ', 13 B' and 14 A, 14 B at the fixed contact 14 A 'can be removed. The movable contact 16 D is electrically connected via a wiring conductor formed on the rear surface of the movable plate 18 to the lever support arrangement 15 , via which the contact 16 D is connected to a point cm common potential.

It should be noted that in this embodiment a conductor layer (not shown), the area of which is at least equal to that of the movable plate 18, is formed below that layer of the movable plate 18 in which the fixed contacts 13 A, 13 B, 13 A ', 13 B ', 14 A, 14 B, 14 A', 14 B 'are formed on the substrate as the lower electrode. The movable plate 18 can be inclined in any desired direction by a force generated between the lower electrode and the upper electrodes 28 A to 28 D when a driving voltage is applied to the lower electrode via a terminal 23 A or 23 B.

In the construction of the integrated microswitch shown in FIG. 44, a circuit structure can be provided as shown schematically in FIG. 45. More specifically, this is a circuit in which a signal input to one of the fixed contacts 13 A, 13 A 'and 14 A can be output at the fixed contact 14 A'. It should also be noted that when all the movable contacts 16 A, 16 B and 16 C are in their open positions and the movable contact 16 D is connected to the fixed contact 14 A ', the latter via the movable contact 16 D to the Point cm common potential is connected to prevent a signal leak.

Fig. 46 illustrates a twentieth embodiment of the integrated micro-switch of this invention according to claim 21 is integrated in a plurality of micro-switches SW1, SW2. , ., SW4 are formed on a common substrate 11 . These individual switches are connected via a wiring pattern to form a desired circuit (not shown).

Fig. 47 illustrates a twenty-first embodiment of the integrated microswitch of this invention according to claim 22, in which the microswitch is shown mounted in a housing. That is, the integrated microswitch SW, which comprises a substrate 11 and a movable plate 18 , is accommodated in a closed container 50 which has connections 51 , 52 leading out of it, via which a switching signal for the on / off control of the switch is created. The gas-tight container 50 may be filled with an inert antioxidant gas such as N ₂ or Ar for practical use of the switch.

Depending on the material from which the fixed contacts 13 A, 13 B, 14 A, 14 B and the movable contacts 16 A, 16 B are formed, it is also possible to use a mixture of N ₂ and O ₂ .

While the lower electrodes 22 A, 22 B and the upper electrodes 28 A, 28 B have been shown in various embodiments described above as being formed from metal films, it is clear that also doped zones in the substrate and / or the movable plate for the purpose the use of such doped zones as lower electrodes 22 A, 22 B and / or upper electrodes 28 A, 28 B can be formed.

In addition, it will be apparent to those skilled in the art that the configuration of the hinge comprising the position maintaining assembly 19 is not limited to any of the particular shapes illustrated in the above-described embodiments.

Fig. 48 shows a twenty-second embodiment of the integrated microswitch of this invention according to claim 14. This embodiment shows a modified form of the movable contacts 16 A, 16 B and the fixed contacts 13 A, 13 B and 14 A, 14 B. More specifically in this embodiment, two pairs of movable contacts 16A, 16A and 16B, 16B formed so as to extend from the opposite Schwenkendabschnitten the bewegli chen plate 18 upward and are designed such that they in and out of contact with the fixed contacts 13 A , 13 B and 14 A, 14 B are movable, which are formed on respective supports 60 which are arranged at a distance above the upper surface of the substrate 11 .

The movable contacts 16 A and 16 B are substantially conical, but have flat or rounded upper surfaces which are shaped so that they prevent damage to the fixed contacts 13 A, 13 B and 14 A, 14 B caused by the movable contacts can be contacted. In the embodiment shown in FIG. 48, the movable contacts 16 A, 16 B are formed directly on the movable plate 18 , which is made of a conductive material, so that the conductivity of the movable plate 18 can be used to fix the fixed contacts 13 A and 13 B or the fixed contacts 14 A and 14 B to connect or disconnect electrically. It should be noted that if it is necessary that the movable contacts of the movable plate are isolated 18 16 A, 16 B electrically with respect to a metal layer on the movable plate formed with an attached arrange between the metal layer and the movable plate th insulating layer can. Then two pairs of movable contacts 16 A, 16 A and 16 B, 16 B can be formed on the metal layer so that there is an electrical connection between each pair of movable contacts.

In the case where the movable plate 18 is made of an insulating material, a metal layer can be formed directly on the movable plate 18 . Two pairs of movable contacts 16 A, 16 A and 16 B, 16 B can be formed on this metal layer, so that there is an electrical connection between each pair of movable contacts.

The fixed contacts 13 A, 13 B, 14 A, 14 B can be formed, for example, by plating before the step of forming the carrier 60 .

The carrier 60 can be formed by the manufacturing process described above with reference to FIGS . 25 to 29. The carriers 60 , except for an intermediate insulator insert 61 , which divides each of the carriers in the middle into two electrically separated sections, are mainly made of a conductive material. One of the sections is the fixed contact 13 A, 14 A, and the other is the contact 13 B, 14 B.

These fixed contacts 13 A, 13 B and 14 A, 14 B are electrically connected to connections 13 A- 1 , 13 B- 1 and 14 A- 1 , 14 B- 1 .

As discussed above, the structure in which the movable contacts 16A , 16B are formed on the top of the movable plate 18 offers the advantage of simplifying the manufacturing process over the process of forming the movable contacts 16A , 16B on the back the movable plate 18 .

Furthermore, it should be noted that the embodiment shown in Fig. 48 is mainly intended to illustrate the structure in which the movable contacts 16 A, 16 B are formed on the top of the movable plate 18 , and that it is not limited to a combination of the mechanism for supporting the movable plate 18 , which includes the position holding arrangements 19 , which are composed of the support rods 18 B and the bearing arrangements 30 , and the mechanism for rocking the movable plate 18 , the two pairs of lower electrodes 22 A- 1 , 22 A- 2 and 22 B- 1 , 22 B- 2 , which are arranged in opposition on the substrate 11 , as shown in Fig. 48. In other words, it will be apparent to those skilled in the art that the construction of the movable contacts 16 A, 16 B is applicable to any construction of the integrated microswitch as described above.

Advantages of the invention

As is apparent from the foregoing, the movable plate 18 according to this invention is made by micromachining technology and configured to be movable in a rocking motion to effect electrical connection and disconnection between movable contacts and fixed contacts. The movable plate 18 itself is characterized in that it is not subjected to any elastic deformation. Therefore, it is unlikely that the movable plate is subject to breakage, which has the advantage of creating a very durable integrated microswitch.

Another advantage is that when a hinge assembly is used as the position retaining assembly 19 for the movable plate 18 , such a hinge arrangement only needs to maintain the position of the movable plate 18 because the weight of the movable plate 18 is mainly supported by the fulcrum assembly 15 . Accordingly, too much strength is not required for the articulation to support the entire weight of the movable plate 18 so that it can be shaped such that it is easily deformed elastically. In addition, the structure according to this invention, in which the movable plate 18 is rockable about the fulcrum assembly 15 , can minimize the spring force exerted by the hinge assembly, and therefore enables the movable plate 18 to move even with such a weak one Force such as the electrostatic force that could not previously be used as a switch operating force, and enables a strong contact pressure to be applied to the fixed contacts to ensure a stable contact state.

Furthermore, this invention proposes the structure in which the position holding arrangement 19 for the movable plate 18 is composed of the support rod 18 B and the bearing arrangement 30 . This structure using the bearing arrangement 30 generates practically no counterforce against the rocking movement of the movable plate 18 and therefore ensures a movement of the movable plate 18 with a further reduced attractive force in the case where the rocking movement is carried out by an electrostatic force. There is also the advantage that the movable plate 18 can be held in a stable contact position with the fixed contacts. In this regard, the electromagnetically operated integrated microswitch according to this invention provides a higher torque for driving the movable plate 18 , which leads to a more stable contact state.

Specifically, the structure using the excitation coils 62 as shown in FIGS. 33 to 43 enables the attraction force to be further increased, thereby achieving the considerable advantage of even better stabilization of the contact state of the switch.

In addition, this invention advantageously enables the fixed contacts 13 A and 13 B and 14 A and 14 B to have an impedance-matched microstrip structure to transmit even high-frequency signals in a stable manner without degrading the waveform quality, and therefore enables the on / off control of high frequency signals with reduced transmission losses and high separation capacity.

Finally, this invention has the further advantage that the integrated microswitch can be manufactured according to this invention by micromachining technology, which is why very small, high-quality microswitches in large quantities and therefore cost can be produced cheaply.

Claims (29)

1. Integrated microswitch comprising:
a substrate ( 11 ) having a fulcrum assembly ( 15 ) protruding from one surface thereof, the fulcrum assembly having a predetermined height and ending in an upper rib portion;
a movable plate ( 18 ) which has an elongated shape and is held on the substrate so that the movable plate is positioned in its central portion above the fulcrum arrangement so that opposite end portions of the movable plate on opposite sides of the fulcrum arrangement in a rocking motion the upper rib portion of the fulcrum assembly is movable around;
a position holding arrangement ( 19 ) for fastening the movable plate to the sub strat such that the movable plate is held movably for the rocking motion;
a drive assembly for generating an attractive force between the substrate and one of the opposite end portions of the movable plate respectively located on opposite sides of the fulcrum assembly and for alternately switching over, generating the attractive force between the opposite end portions to rock the movable plate;
movable contacts ( 16 A, 16 B) attached to the opposite end portions of the movable plate at the opposite free ends thereof; and
fixed contacts ( 13 A, 13 B, 14 A, 14 B) which are attached to the substrate and are formed so that they are electrically connectable to and detachable from the movable contacts when the movable plate is moved in the rocking motion. 2. Integrated microswitch according to claim 1, wherein the drive arrangement two lower electrodes ( 22 A, 22 B), which are arranged on the substrate ( 11 ) at opposite positions, which are symmetrical with respect to the lever support arrangement ( 15 ), and the movable surface A plate ( 18 ) made of conductive material, the arrangement being such that a drive voltage is selectively and alternately applied to one or the other of the lower electrodes and the movable plate. 3. Integrated microswitch according to claim 1, wherein the drive arrangement two lower electrodes ( 22 A, 22 B), which are arranged on the substrate ( 11 ) at opposite positions, which are symmetrical with respect to the lever support arrangement ( 15 ), and two upper electrodes ( 28 A, 28 B) formed opposite the corresponding lower electrodes on the movable plate ( 18 ) made of a non-conductive material, the arrangement being such that a drive voltage is selectively and alternately between the one or the other of the lower electrodes and the opposite one of the upper electrodes. 4. Integrated microswitch according to claim 1, wherein the drive arrangement comprises a plurality of lower electrodes ( 22 A- 1 , 22 A- 2 , 22 B- 1 , 22 B- 2 ) which are arranged on the substrate ( 11 ) in opposite positions which are symmetrical to each other with respect to the lever support assembly ( 15 ) and which includes the movable plate ( 18 ) made of a conductive or non-conductive material, the arrangement being such that a drive voltage is selectively and alternatively between the plurality of lower ones Electrodes are applied, which are arranged in one or the other of the opposite positions. 5. Integrated microswitch according to claim 1, wherein the drive arrangement flat planar coils ( 45 A, 45 B), which are formed on the movable plate ( 18 ) at opposite positions, which are symmetrical with respect to their pivot center, and permanent magnet arrangements ( 46 A , 46 B), which are designed to generate a magnetic field parallel to the magnetic fields generated by the planar coils, the arrangement being such that a drive voltage is selectively and alternatively applied to one or the other of the planar coils . 6. Integrated microswitch according to claim 1, wherein the drive arrangement comprises the movable plate ( 18 ), which is formed from a magnetic material, and two excitation coils ( 62 B), which are wound in a tube and in the substrate ( 11 ) to opposite ten, with respect to the lever support arrangement ( 15 ) symmetrical positions are embedded, the arrangement being such that a drive voltage is selectively and alternatively applied to one or the other of the excitation coils. 7. Integrated microswitch according to claim 1, wherein the drive arrangement comprises the movable plate ( 18 ), which is formed from a magnetic material, and two excitation coils ( 62 B), the opposite from an additional substrate ( 72 A) with respect to Lever support arrangement ( 15 ) are held in symmetrical positions, the additional substrate being held relative to the substrate ( 11 ) in such a way that it is arranged above the movable plate, the arrangement being such that a drive voltage is selectively and alternatively applied to one or the other the excitation coils is applied. 8. Integrated microswitch according to claim 1, wherein the drive assembly comprises a pair of pieces ( 67 ) of magnetic material for magnetic attraction, which are fixed on the movable plate ( 18 ) at opposite, with respect to the lever support assembly ( 15 ) symmetrical positions, wherein the movable plate is formed of magnetic material and a pair of excitation coils ( 62 B) which are embedded in the substrate ( 11 ) opposite the corresponding pieces for magnetic attraction, the arrangement being such that a drive voltage is selective and alternating to which one or the other of the excitation coils is applied at the opposite symmetrical positions. The integrated microswitch of claim 1, wherein the drive assembly is a pair of magnetic attraction pieces ( 67 ) mounted on the movable plate ( 18 ) made of non-magnetic material in opposite positions symmetrical with respect to the lever support assembly ( 15 ) , the magnetic attraction pieces having the same magnetic polarization in the direction of their thickness, and a pair of excitation coils ( 62 B) opposed to the corresponding magnetic attraction pieces embedded in the substrate ( 11 ), the The arrangement is such that the pair of excitation coils generates magnetic fields which have opposite polarities and the fields are switched in the opposite direction. 10. The integrated microswitch of claim 1, wherein the position retention assembly ( 19 ) is a pair of elastically deformable swivel assemblies formed integrally with the movable plate ( 18 ) and extending outwardly from opposite longitudinal sides from their central pivot points, and a pair of support plates ( 21 A), which protrude from the substrate ( 11 ) at two locations, each of which is adjacent to the center of opposite longitudinal sides of the movable plate at its pivot points, the free end of each of the hinge assemblies one to the corresponding support plate connected electrode section. 11. Integrated microswitch according to claim 1, wherein the position holding arrangement ( 19 ) a pair of support rods ( 18 B) which is integrally formed with the movable plate ( 18 ) and extends outward from opposite longitudinal sides at pivot points located in the middle thereof, and a pair of support plates ( 31 ) projecting from the substrate at two locations adjacent opposite longitudinal sides of the movable plate at center pivot points, the support plates bearing holes ( 30 A) for receiving the respective support rods passing therethrough exhibit. 12. Integrated microswitch according to claim 1, wherein the movable contacts ( 16 A, 16 B) are formed on the underside of the movable plate ( 18 ) at its free ends, while the fixed contacts ( 13 A, 13 B, 14 A, 14 B) are formed on the substrate ( 11 ) at positions opposite to the corresponding movable contacts, the predetermined height of the lever support arrangement ( 15 ) projecting from the substrate being greater than the height of the upper surfaces of the fixed contacts above the substrate. 13. Integrated microswitch according to claim 1, wherein the movable contacts ( 16 A, 16 B) comprise elastic metal portions which are fixed to the movable plate ( 18 ) and opposed to each other from free ends of the movable plate ( 18 ) in the longitudinal direction thereof extend outward, the elastic metal portions serving to provide a self-cleaning process between the movable contacts and the fixed contacts. 14. The integrated microswitch according to claim 1, wherein a pair of supports ( 60 ) are provided, which are fastened on the substrate ( 11 ) at an elevated position above respective end sections of the movable plate ( 18 ), the movable contacts ( 16 A, 16 B) are formed on the top of the movable plate near free ends of opposite end portions thereof, while the fixed contacts ( 13 A, 13 B, 14 A, 14 B) upside down on the respective supports ( 60 ) corresponding movable contacts are attached opposite. 15. Integrated microswitch according to claim 1, wherein the fixed contacts ( 13 A, 13 B, 14 A, 14 B) are formed by conductors which form signal transmission lines which are matched to a predetermined impedance. 16. Integrated microswitch according to claim 1, wherein the fixed contacts ( 13 A, 13 B, 14 A, 14 B) are formed by conductors which form microstrip conductors. 17. Integrated microswitch according to claim 1, wherein the fixed contacts ( 13 A, 13 B, 14 A, 14 B) are formed by conductors which form coplanar microstrip conductors. 18. Integrated microswitch comprising:
fixed contacts ( 13 ) formed on a substrate ( 11 );
a cantilever ( 18 ) made of a magnetic conductor and attached to the substrate at one end thereof, the other end of the cantilever being free and movable so as to be close to and away from firm contact therewith; and
an excitation coil ( 62 B), which is arranged opposite the free end of the cantilever, the coil being formed from a wire which is wound in a tubular shape. 19. Integrated microswitch comprising:
a movable cantilever ( 18 ) made of a magnetic conductor and attached at one end to a substrate ( 11 );
a fixed contact support bracket ( 68 ) made of a non-magnetic conductor and on which a fixed contact ( 13 ) is held in a position opposite the free end of the movable bracket but slightly offset with respect thereto; and
an excitation coil ( 62 B) which is arranged opposite the free end of the movable arm, the coil being formed from a tubular wound wire. 20. Integrated microswitch according to claim 1, wherein the movable plate ( 18 ) has a polygonal shape and is made of a non-magnetic material, the lever support arrangement ( 15 ) is arranged below the center of the movable plate, the position holding arrangement ( 19 ) the polygonal movable plate so holds that each vertex of the polygonal movable plate is luffing around the fulcrum arrangement around the movable contacts (16 A, 16 B, 16 C, 16 D) are attached to the polygonal movable plate at their respective apices fixed contacts are formed on the substrate each corresponding to the corresponding one of the movable contacts, the drive arrangement is designed so that it drives the polygo nale movable plate so that one of the vertices of the movable plate is selectively attracted, whereby only the selected one of the vertices corresponding movable contact and the associated fixed contact ( 13 A, 13 A ', 14 A) are brought into contact with each other while the movable contacts corresponding to the other vertices and the associated fixed contacts are not in contact with each other. 21. Integrated microswitch arrangement, in which a plurality of integrated microswitches according to claim 1 are jointly formed on the substrate ( 11 ). 22. The integrated microswitch of claim 1, wherein the integrated microswitch is housed in a sealed housing ( 50 ), the sealed housing being filled with inert gas. 23. A method for manufacturing an integrated microswitch, comprising the following steps:
Forming a pair of lower electrodes ( 22 A, 22 B) and fixed contacts ( 13 A, 13 B, 14 A, 14 B) on one surface of a substrate ( 11 );
Forming a fulcrum assembly ( 15 ) on the substrate in a space between the pair of opposed lower electrodes ( 22 A, 22 B);
Forming a sacrificial layer ( 25 ) of a material that is removable by an etchant, the sacrificial layer having a thickness that is approximately equal to the height of the lever support assembly;
Forming movable contacts ( 16 A, 16 B) on one surface of the sacrificial layer, which will later be attached to opposite free ends of a movable plate ( 18 );
Form, on the sacrificial layer, an insulating layer ( 26 ) having a coplanar surface to the movable contacts;
Forming a layer ( 18 D) of conductive material on the insulating layer;
Forming the movable plate ( 18 ) and hinge assemblies ( 19 ) from the layer of conductive material and forming openings ( 18 A) in the movable plate for use in subsequent etching;
Removing the insulating layer, through the etch openings, in a portion thereof formed between the fulcrum assembly and the movable plate; and
Remove the sacrificial layer by etching. 24. A method of manufacturing an integrated microswitch comprising the following steps:
Forming a metal layer on a surface of a substrate ( 11 );
Form a pair of lower electrodes ( 22 A, 22 B), a base for a Hebel Stützanord voltage ( 15 ), a base ( 33 ) for carrier plates ( 31 ) and fixed contacts ( 13 A, 13 B, 14 A, 14 B) the metal layer;
Forming plating layers of a predetermined height on the base for the fulcrum assembly and the base for the base plates to thereby form the fulcrum assembly and the base plates;
Forming a first sacrificial layer ( 34 ) having a thickness that is equal to the height of the lever support assembly and the support plates and that has a flat surface that is coplanar with the surfaces of the lever support assembly and the support plates;
Forming movable contacts ( 16 A, 16 B) on the surface of the first sacrificial layer at positions opposite to the fixed contacts;
Forming a second sacrificial layer ( 35 ) on the first sacrificial layer such that the surface of the second sacrificial layer is coplanar with the surfaces of the movable contacts;
Forming a conductive layer ( 36 ) on the surfaces of the second sacrificial layer and the moveable contacts;
Forming a pair of the conductive layer and the second sacrificial layer pass through the openings ( 36 A, 36 B) at each of the positions corresponding to the support plates for the purpose of forming bearing assemblies ( 30 );
partial removal of the conductive layer such that those portions of the conductive layer remain, that the movable plate and a pair of support rods (18 B) which are integrally formed with the movable plate and extending out of it, are formed;
Forming a photoresist layer ( 37 ) having a thickness approximately equal to that of the movable plate in those portions of the second sacrificial layer from which the conductive layer has been removed;
Forming a through hole ( 37 A, 37 B) in the photoresist layer at each of its sections located in the pairs of the openings of the conductive layer and the second sacrificial layer so that the pair of carrier plates are exposed through the through holes;
Forming metal plating layers ( 38 ) with a predetermined thickness on those surfaces of the conductive layer which are exposed in the area delimited by the photoresist layer and on those surfaces of the carrier plates which are exposed through the through holes, thereby to move the movable plate ( 18 ), the support rods ( 18 B) and pillar sections ( 38 A, 38 B) of the bearing arrangement to form;
Forming a third sacrificial layer ( 39 ) on a surface that is coplanar with the surfaces of the photoresist layer, the movable plate, the support bars, and the pillar portions of the bearing assemblies;
Forming openings ( 39 A) penetrating through the third sacrificial layer such that surfaces of the pillar sections of the bearing arrangements are exposed;
Forming a conductive layer ( 41 ) inside the openings and on the entire surface of the third sacrificial layer;
Forming a fourth sacrificial layer ( 42 ) on this conductive layer;
Forming elongated slots ( 42 A) that span the pillar portions of the bearing assemblies in the fourth sacrificial layer;
Forming plating layers ( 43 ) of a predetermined thickness on those surfaces of the conductive layer exposed in the elongated slots to form a bridging portion of the bearing assembly that bridges its pillar portions to thereby complete the formation of the bearing assemblies; and
Removing, after the completion of the bearing arrangements, the fourth sacrificial layer; the conductive layer exposed by removing the fourth sacrificial layer; the photoresist layer left to limit the movable plate, support rods and pillar portions of the bearing assemblies by removing the conductive layer; and the second sacrificial layer and the first sacrificial layer formed between the movable plate and the substrate. 25. A method of manufacturing an integrated microswitch comprising the following steps:
Forming a pair of lower electrodes ( 22 A, 22 B), a base ( 15 ') for a lever support arrangement ( 15 ) and a pair of bases ( 33 ) for carrier plates ( 31 ) on a substrate ( 11 );
Forming, on the substrate, an insulating layer ( 12 ') having a recess (12'A) to expose a portion of the substrate in which the lower electrodes and bases are formed;
Forming solid contacts ( 13 A, 13 B, 14 A, 14 B) on the insulating layer;
Forming a lever support assembly ( 15 ) and a pair of support plates ( 31 ) each having a height approximately equal to that of the recess on the respective bases therefor;
Forming a first sacrificial layer ( 25 ) in the recess such that a flat surface that is coplanar with the upper surfaces of the fulcrum assembly, the backing plates, the first sacrificial layer and the insulating layer is obtained;
Forming, on the flat surface, a layer ( 26 ) of insulating material that is removable by an etchant and layers of insulating materials layered thereon;
Forming the movable plate ( 18 ) by etching the layers of the insulating material and the layered layers of the insulating materials, the movable plate being integrally formed with a pair of pivots ( 19 ) extending from opposite longitudinal sides of the movable plate from the central portion thereof , and disposed on the first sacrificial layer and having a plurality of through holes ( 18 A) to expose the first sacrificial layer below, and wherein a pair of electrode portions ( 21 ) are integrally connected to end connections of the pair of pivots and disposed on the support plates;
Removing the layer of insulating material formed between the first sacrificial layer and the movable plate by the etchant only in a portion thereof below a central portion of the movable plate, thereby forming a gap (G1) between the fulcrum assembly and the movable plate;
Form a second sacrificial layer ( 29 ) with a height which is approximately equal to that of the movable plate on the insulating layer on which the fixed contacts were formed, and on the first sacrificial layer, so that a second flat surface, the coplanar to the upper surfaces of the movable plate and the second sacrificial layer is obtained;
Forming a metal conductor layer on the entire second flat surface;
Etching the metal conductor layer such that a pair of upper electrodes ( 28 A, 28 B) on the movable plate at locations symmetrical with respect to the fulcrum arrangement, wiring conductor sections on the pivots, and the electrode sections connected to the upper electrodes, and to win movable contacts ( 16 A, 16 B) which extend from respective end portions of the movable plate to the second sacrificial layer; and
Removing the first sacrificial layer and the second sacrificial layer, thereby forming a second gap (G2) between the movable plate and the substrate. 26. A method of manufacturing an integrated microswitch comprising the following steps:
Forming a lever support arrangement ( 15 ) with a certain height on a substrate ( 11 );
Forming a pair of fixed contacts ( 13 A, 13 B, 14 A, 14 B) on the substrate at locations that are symmetrical with respect to the fulcrum assembly, the fixed contacts having a height less than that of the fulcrum assembly;
Forming, on the substrate, a sacrificial layer which has a thickness which is approximately equal to the height of the lever support arrangement and which has a flat surface which is coplanar with the upper surface of the lever support arrangement;
Forming, on the sacrificial layer, a removable layer made of a material that is removable by an etching solution;
Form, on the removable layer, a movable plate ( 18 ), a pair of pivots ( 19 ) connected to the movable plate, and a pair of electrode sections ( 21 A, 21 B, 21 A ', 21 B' ) connected to the swivel joints made of a non-conductive material;
Forming a second sacrificial layer that has a thickness approximately equal to that of the movable plate on the removable layer at locations where the fixed contacts have been formed and that has a flat surface that is coplanar with the upper surface of the movable plate ;
Forming planar coils ( 45 A, 45 B) on the movable plate at locations symmetrical with respect to the fulcrum assembly and wiring conductors connected to the planar coils for supplying a drive current to the pair of planar coils;
Forming movable contacts ( 16 A, 16 B) spanning the opposite free ends of the movable plate and the second sacrificial layer;
Removing the removable layer to separate the movable plate from the fulcrum assembly; and
Removing the first and second sacrificial layers to separate the movable plate from the substrate. 27. A method of manufacturing an integrated microswitch comprising the following steps:
Forming a pair of holes ( 63 ) in a surface of a substrate ( 11 );
Mounting excitation coils ( 62 ) in the bores, each coil being tubularly wound and electrodes ( 62 ) connected to opposite ends of the coil so that the electrodes are on an end face of the tubular coil;
Applying a resin material ( 64 ) to the top surface of the excitation coils and to the top surface of the substrate to form a resin layer, after which the resin material is cured to thereby secure the excitation coils in the bores;
Machining the top surface of the resin layer and the electrodes mounted on the excitation coils, after which the surface of the resin layer is mirror polished;
Forming metal layers, wiring conductors ( 65 ) which are connected to the electrodes of the excitation coils, electrodes ( 66 ) for applying a drive current to the wiring conductors, fixed contacts ( 13 A, 13 B, 14 A, 14 B), a conductor base ( 15 ') for a lever support arrangement ( 15 ) and a pair of conductor bases ( 21 ') for carrier plates ( 31 ) on the mirror-polished surface of the resin layer;
Forming first plating layers of a predetermined thickness on the base for the fulcrum assembly and the bases for the support plates, thereby forming the fulcrum assembly and a pair of support plates;
Forming a first sacrificial layer ( 34 ) having a thickness equal to that of the fulcrum assembly and the backing plates to provide a flat surface in which top surfaces of the fulcrum assembly and the backing plates are exposed;
Forming movable contacts ( 16 A, 16 B) on the surface of the first sacrificial layer at positions opposite to the fixed contacts;
Forming a second sacrificial layer ( 35 ) on the first sacrificial layer such that the surface of the first sacrificial layer is flush with the surfaces of the movable contacts;
Forming a first conductive layer ( 36 ) on the second sacrificial layer and the movable contacts;
Forming a pair of openings ( 37 A, 37 B) which penetrate both the conductive layer and the second sacrificial layer to expose respective surface portions of the carrier plates to form pillar portions ( 38 A, 38 B) of bearing assemblies ( 30 );
partially removing the conductive layer left to allow those portions of the conductive layer, that the movable plate and a pair of support rods (18 B) are formed which extend from the movable plate;
Forming a photoresist layer ( 37 ) by deposition having a thickness approximately equal to the movable plate on those portions of the second sacrificial layer from which the conductive layer has been removed;
Forming second plating layers ( 38 ) of a predetermined thickness on those surface portions of the conductive layer that are exposed in the region delimited by the photoresist layer and on those surface portions of the carrier plates that have been exposed through the openings, thereby to move the movable plate to form the support rods and the pillar sections of the bearing assemblies;
Forming a third sacrificial layer ( 39 ) on planar surfaces defined by the surfaces of the photoresist layer, the movable plate, the support bars and the pillar portions of the bearing assemblies;
Form the openings through the third sacrificial layer ( 39 A) such that the upper surfaces of the pillar portions of the bearing arrangements are exposed;
Forming a second conductive layer ( 41 ) inside the openings ( 39 A) and on the surface of the third sacrificial layer;
Forming a fourth sacrificial layer ( 42 ) on this conductive layer;
Forming elongated slots ( 42 A) in the fourth sacrificial layer that span the pillar portions of the bearing assemblies;
Forming third plating layers ( 43 ) of a predetermined thickness on those surfaces of the second conductive layer that are exposed in the elongated slots to complete the bearing assemblies;
Removing the fourth sacrificial layer;
Removing the second conductive layer exposed by removing the fourth sacrificial layer;
Removing the photoresist layer left by removing the second conductive layer so as to surround the movable plate, the support bars and the pillar portions of the bearing assemblies; and
Removing the second sacrificial layer and the first sacrificial layer formed between the movable plate and the substrate. 28. The integrated microswitch of claim 1, wherein the movable plate ( 18 ) is initially formed so that a portion of the underside of the movable plate is in contact with the upper rib portion of the fulcrum assembly ( 15 ) via a film layer with a minimal film thickness. and the remaining part of the underside of the movable plate is in contact with the substrate ( 11 ) via a resin layer, the resin layer having a thickness approximately equal to the height of the lever support arrangement and the movable plate ultimately through the position holding arrangement ( 19 ) the substrate when the film layer and the resin layer are removed. 29. Integrated microswitch according to claim 1, wherein the movable plate ( 18 ) is held by the position holding arrangements ( 19 ) so that the movable contacts ( 16 A, 16 B) and the fixed contacts ( 13 A, 13 B, 14 A , 14 B) have no connection to one another while the driver arrangement deactivates the movable plate.