EP1665315B1 - Component for modifying the impedance of a coplanar waveguide and method for producing such a component - Google Patents
Component for modifying the impedance of a coplanar waveguide and method for producing such a component Download PDFInfo
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- EP1665315B1 EP1665315B1 EP04762505A EP04762505A EP1665315B1 EP 1665315 B1 EP1665315 B1 EP 1665315B1 EP 04762505 A EP04762505 A EP 04762505A EP 04762505 A EP04762505 A EP 04762505A EP 1665315 B1 EP1665315 B1 EP 1665315B1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49105—Switch making
Definitions
- the invention relates to a component for impedance change in a coplanar waveguide according to the preamble of claim 1.
- a thin metal bridge is stretched between ground lines of a coplanar waveguide. Electrostatically, the bridge is pulled onto a thin dielectric deposited on a signal line between the masses, thereby increasing the capacitance of a "plate capacitor” formed of bridge and signal line. This capacitance change affects the propagation characteristics of the electromagnetic waves carried on the waveguide.
- the metal bridge In the “off” state (the metal bridge is pulled down to the signal line) is a major part of Services are reflected. In the "on” state, on the other hand (the metal bridge is on top), a large part of the power is to be transmitted.
- a novel grounded coplanar waveguide with cavity structure Mitsubishi Electric Corporation, IEEE 2003, page 140 , a waveguide with a hollow structure is known, in which on the side facing away from a signal line of an insulator, a cavity is formed by a ground cover, which in turn is electrically connected to two ground plates in communication adjacent to the signal line on the signal line side facing the insulator layer are arranged.
- a disadvantage of the two embodiments listed first is that the electrostatic actuation of the respective bridge, the ground lines or the signal line must be supplied with a DC control voltage.
- Impedance changing component 101 of a section of waveguide 102 comprises two external ground lines 103, 104 and an intermediate signal line 105.
- a bridge arrangement 106 with a cantilevered bridge 107 is constructed via ground lines 103, 104 and signal line 105.
- a section along the section line VV with undeflected bridge 107 and deflected bridge 107 (shown in dashed lines) is in Fig. 5b displayed.
- the Bridge 107 is stretched between end-to-end galvanized post members 108.
- the respective ground line 103 and 104 in the region of the bridge 107 has a recess 103a or 104a.
- the bridge can be acted upon via a terminal 109 with a drive DC voltage with respect to the lines 103, 104, 105 in order to pull the bridge against the lines 103, 104, 105 via electrostatic forces.
- an insulating layer 110 is laid in the area below the bridge via the lines 103, 104, 105 (see in particular the sectional arrangement).
- the component 101 can be replaced by an equivalent circuit diagram Fig. 6 in terms of high frequency characteristics. Symmetrically to two line segments 111, 112 with the wave impedance 113 shown symbolically, a grounded branch 114 is derived which has the following components: A first coupling capacitance 115, an inductance 116 and an ohmic resistance 117 followed by a second coupling capacitance 118 Coupling capacity is symbolically connected to a voltage source 119.
- the first coupling capacitance 115 is defined by the intersection of the signal line 105 with the bridge 107 and can be used according to the in Fig. 5b Two positions of the bridge shown in particular assume two capacitance values.
- the inductance 116 results from the bridge sections between the signal line 105 and the respective ground line 103, 104. The same sections define the ohmic resistance 117.
- the coupling capacitance 118 is defined by the sectional area of the bridge 107 with the respective narrow area of the bridge the first coupling capacity 114 according to the in Fig. 5b shown positions of the bridge 107 in particular assume two values.
- a capacitance change can be realized by about a factor of 100, whereby the component 101 can be used as a high-frequency switch in a predetermined frequency range.
- the invention has for its object to provide a component described above with decoupled in terms of the control signal coupling capacitances, which has improved switching parameters.
- the invention proceeds from a component for impedance change in a coplanar waveguide comprising two ground lines and a signal line lying between the ground lines and a conductive connecting element, which leads to the two ground lines and the Signal line has a cover surface and is insulated, so that in each case a capacitor is formed.
- the essence of the invention lies in the fact that the connecting element and the lines are arranged or configured such that the respective capacitor between the ground lines and the connecting element has a fixed capacitance, but the capacitor between the connecting element and signal line has a variable capacitance. This approach is based on the finding that it is very difficult in the embodiment last mentioned above, the switchable bridge outside, ie in Fig.
- the coupling capacitance to the signal line is unchangeable with the same advantages, but the coupling capacitances to the respective ground lines are variable.
- the coupling capacitances are in series with an inductance and form a resonant circuit whose resonant frequency can reflect two operating points due to the variable capacitance or capacitance, for example transmission and reflection of a signal with a predetermined frequency.
- the resonant circuit is thus sufficient if a coupling capacitance is switchable.
- the connecting element is mechanically deformable, preferably elastically, such that a distance between the connecting element and the line, which forms the variable capacitance together with the connecting element, in the region of the covering surface, e.g. about electrostatic forces, is changeable.
- the signal line or the ground lines in a partial area in which it covers or cover the connecting element is mechanically deformable or at a distance such that the distance in the area of the respective covering area can be adjusted.
- the ground lines are not connected by a bridge, but it is e.g. provided in the signal line, a bridge under which the connecting element runs, wherein the connecting element is capacitively coupled by overlapping surfaces with the ground lines and at least one interposed therebetween insulation layer to the ground lines.
- the connecting element is preferably acted upon by a voltage.
- electrostatic forces can be used, for example, on the capacitor between the connecting element and the signal line in order to switch its capacity, for example, between two values.
- an insulating layer is first produced on the substrate prior to the structure of the structure. This can be done for example by thermal oxidation or the application of a PECVD layer (PECVD stands for plasma enhanced chemical vapor deposition). Thermal oxide is advantageous in terms of low attenuation of a high frequency signal.
- the insulation layer deposited on the connecting element is structured. In this way, not only a connection for the connection of the connecting element can be exposed, but possibly also areas on connection bars, which are used for a subsequent electroplating for electrical connection of sections on which structures are to be "galvanized".
- the ground lines and at least part of the signal lines are preferably generated via a galvanic step.
- a starting layer is deposited.
- This starting layer is conveniently structured via a lift-off process. This prevents damage to the dielectric already applied to the connecting element.
- each exposed region of the sacrificial layer if there is additionally a start layer in this region, can be galvanically reinforced.
- the galvanic layer is allowed to grow to such an extent that it overlaps over the sacrificial layer and, as it were, creates a mushroom structure.
- a further metallization is now laid over the sacrificial layer with galvanic reinforcements and structured.
- the bridge of the signal line is provided in the first place, wherein the remaining areas are preferably formed in plan view according to the contour of the signal line and the ground lines.
- the sacrificial layer is then preferably anisotropically removed to the area under the bridge.
- the sacrificial layer is also removed under the bridge metallization, thus providing a device consisting essentially of a coplanar waveguide in which the ground lines are each capacitively coupled across a continuous connector and the signal line is connected via a flexible bridge, i. a switchable bridge is also capacitively coupled to the connection element.
- a switchable bridge is also capacitively coupled to the connection element.
- a high-frequency switch 1 which comprises a piece of a coplanar waveguide 2.
- the waveguide 2 has two ground lines 3, 4 and a signal line 5.
- the signal line 5 is embodied in a region above a connection element 6 in the form of a bridge 7 (see in particular sectional view according to FIG Fig. 1b ).
- the high-frequency switch 1 is constructed on a substrate 8, on which an insulating layer 9 was first deposited. This is followed by the connecting element 6 with a connection pad 10. Except for a contact point to the connection pad 10, the connecting element 6 is covered by a further insulating layer 11.
- connection pad 10 If a voltage is now applied to the connecting element 6 via the connection pad 10, electrostatic forces acting on the bridge 7, which is DC-connected to ground potential, pull the bridge 7 as far as the connecting element 6 until the bridge 7 on the insulating layer 11 in the area above the connecting element 6 rests.
- the associated electrical equivalent circuit diagram is based on Fig. 3 explained.
- the second coupling capacity is provided with the reference numeral 15.
- the second coupling capacity 15 is fixed in its capacity.
- Fig. 1a and 1b This corresponds to the sectional area of the connecting element 6 with the ground lines 3, 4.
- the inductance 116 and the ohmic resistance 115 stand for the region of the connecting element between the signal line 5 and the respective ground line 3, 4.
- the variable coupling capacity is defined by the sectional area of the bridge determined with the connecting element 6. It can be controlled by the pad 10 in Fig. 1a and 1b eg set two values, a maximum value and a minimum value of the capacity.
- the voltage source 119 is responsible for the electrostatic activation of the bridge 7.
- the corresponding equivalent circuit as in Fig. 3 also results for a high-frequency switch according to Fig. 2a and 2b .
- the high-frequency switch according to Fig. 2a and 2b differs from the high frequency switch, however Fig. 1a and 1b essentially by the fact that instead of a longitudinal bridge along the signal line 5 in Fig. 2 a transverse bridge 21 between the ground lines 3, 4 is realized.
- the high-frequency switch 20 has the following structure: On the substrate 8 with insulating layer 9 is not arranged first a connecting element, but the line structures of the coplanar waveguide 22 with the ground lines 3, 4 and the signal line 5. In the region of the bridge 21st is on the lines 3, 4, 5 each have an insulating layer 23, 24, 25 are provided. This is followed by a post member 26 respectively the outer ground line 3, 4.
- the post elements 26 have seen in section three layers. First, a starting layer 27, followed by a galvanically grown layer 28 and covered with a cover layer 29, which electrically corresponds to the connecting element 6, and from which the bridge 21 is formed. With a drive voltage, the post structure 26 can be acted upon with bridge 21 via a connection pad 30.
- the coupling capacitance 15 (formed from the respective coupling capacitances of the connecting element 6 and the post elements 26) in series with the actual switching capacitance 115, the inductance 117 and the ohmic resistance 116 and thus form a resonant circuit. If one chooses the coupling capacitance 15 large, compared with the switching capacitance 115 in the driven, ie down state of the respective bridge 7, 21, the switch behaves with respect to a resonant frequency of the resonant circuit as a corresponding switch without integrated drive DC decoupling.
- the coupling capacitance 15 is reduced, an additional degree of freedom is obtained in order to shift the resonant frequency of the resonant circuit to higher frequencies. Furthermore, this makes it possible to reduce the effective capacitance for the high frequency and thus in particular the insertion loss in the non-driven state, without this being accompanied by an increase in the switching voltage.
- the attractive force for the bridge results from the derivation of the energy stored in the capacitance, whereby the constant coupling capacitances 15 play no role in this regard.
- the starting point is a high-resistance p-doped silicon substrate 8 having a thickness of 300 ⁇ m.
- the substrate 8 is thermally oxidized to produce an insulation layer 9.
- a PECVD layer has so far a higher attenuation.
- a layer of molybdenum-tantalum (MoTa) is applied in a thickness of preferably 100 to 400 nm in a sputtering process.
- MoTa molybdenum-tantalum
- Other metallizations are possible, but preferably a refractory metal such as molybdenum tantalum should be used.
- molybdenum-tantalum is relatively non-noble and can be wet-chemically etched at the end of the process sequence with respect to all other metals used. This is particularly important for connection bars 40 for performing the electroplating.
- the applied layer is patterned to produce therefrom the connecting element 6. This consists in the region of the later ground lines 3, 4 from a surface 41 of a predetermined size to define the fixed coupling capacitance 15, narrow connecting webs 42 to a central electrode surface 42, with which the coupling is fixed to the subsequent signal line.
- an insulating layer eg PECVD SiOx, for example, deposited at 300 °.
- PECVD SiOx silicon oxynitrite (SiON), silicon nitrite (Si 3 N 4 ) or another insulator.
- the insulating layer is also structured, in particular in the region of the connection bars and at a connection point 43 for a later connection pad 10 for applying a control voltage to the high-frequency component (see FIG. Fig. 4d ).
- a starting metallization layer 12 preferably sputtered, eg in a thickness of 300 nm (metals being titanium-tungsten, gold or chromium-copper, for example) and in the form of the intended waveguide structure with respect to the ground line and the signal line, preferably a lift-off process, structured. Due to the lift-off process, the previously applied insulation layer 11 is not affected. With regard to the structure of the signal line, it should be noted that this is interrupted in the region of the electrode 43 (here, the connection is made later by the bridge 7 arranged above it).
- the supply line 44 is generated to the connection pad 10 with the start metallization.
- a sacrificial layer 45 for example, photoresist in a thickness of 3.5 to 4 microns ( Fig. 4f ).
- the layer 13 is generated in a galvanic process.
- a material for the electroplating process for example, copper is suitable. This process step is over Fig. 4g seen.
- the cover layer 14 is produced together with the bridge 7.
- the bridge 7 For this example, aluminum or aluminum-silicon-copper is applied in a thickness of 300 to 800 nm and structured according to the structures of the ground lines 3, 4 and the signal line 5. That is, the bridge 7 is continued in the galvanized area of the signal line 5 as a cover layer on.
- Fig. 4i illustrates that now the sacrificial layer 45 is removed in an anisotropic etching step, for example by RIE O 2 plasma etching, to the area below the bridge 7.
- Fig. 4k already shows the process stage, after selectively to all other metals, for example in hydrogen peroxide (H 2 O 2 ), the molybdenum tantalum of the connecting bars 40 has been removed.
- the still existing sacrificial layer 45 under the bridge 7 prevents the bridge 7 from being affected during this process step.
- the sacrificial layer 45 is also removed under the bridge 7, whereby a structure according to Fig. 4l remains that of the structure according to the Fig. 1a and 1b equivalent.
- the removal of the sacrificial layer under the bridge 7 requires an isotropic etching step, which can be carried out, for example, in a plasma barrel etcher in the O 2 plasma.
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Abstract
Description
Die Erfindung betrifft ein Bauelement zur Impedanzänderung bei einem koplanaren Wellenleiter nach dem Oberbegriff des Anspruchs 1.The invention relates to a component for impedance change in a coplanar waveguide according to the preamble of
Bauteile und Herstellungsverfahren zu Bauteilen zur Impedanzenänderung bei koplanaren Wellenleitern sind in verschiedenen Ausführungsformen bereits bekannt geworden.Components and methods of manufacturing components for impedance change in coplanar waveguides have already become known in various embodiments.
Bei einer Ausführungsform eines mikromechanisch gefertigten Hochfrequenz-Kurzschlussschalters ist eine dünne Metallbrücke, zwischen Masseleitungen eines koplanaren Wellenleiters gespannt. Elektrostatisch wird die Brücke auf ein dünnes Dielektrikum, welches auf einer zwischen den Massen liegenden Signalleitung aufgebracht ist, gezogen, wodurch die Kapazität eines aus Brücke und Signalleitung gebildeten "Plattenkondensators" vergrößert wird. Diese Kapazitätsänderung beeinflusst die Ausbreitungseigenschaften der auf dem Wellenleiter geführten elektromagnetischen Wellen. Im "Off"-Zustand (die Metallbrücke ist zur Signalleitung nach unten gezogen) soll ein Großteil der Leistungen reflektiert werden. Im "On"-Zustand hingegen (die Metallbrücke ist oben) soll ein Großteil der Leistung transmittiert werden.In one embodiment of a micromechanically fabricated high frequency shorting switch, a thin metal bridge is stretched between ground lines of a coplanar waveguide. Electrostatically, the bridge is pulled onto a thin dielectric deposited on a signal line between the masses, thereby increasing the capacitance of a "plate capacitor" formed of bridge and signal line. This capacitance change affects the propagation characteristics of the electromagnetic waves carried on the waveguide. In the "off" state (the metal bridge is pulled down to the signal line) is a major part of Services are reflected. In the "on" state, on the other hand (the metal bridge is on top), a large part of the power is to be transmitted.
Aus der Deutschen Offenlegungsschrift
Aus dem Artikel "
Ein Nachteil der beiden zuerst aufgeführten Ausführungsformen besteht darin, dass zum elektrostatischen Betätigen der jeweiligen Brücke die Masseleitungen bzw. die Signalleitung mit einer Steuergleichspannung beaufschlagt werden müssen.A disadvantage of the two embodiments listed first is that the electrostatic actuation of the respective bridge, the ground lines or the signal line must be supplied with a DC control voltage.
Eine aus dem Stand der Technik bekannte Struktur, die diesen Nachteil nicht aufweist, ist in den
Um einen kompakten Aufbau zu erhalten, weist die jeweilige Masseleitung 103 und 104 im Bereich der Brücke 107 eine Ausnehmung 103a bzw. 104a auf.In order to obtain a compact construction, the
Die Brücke kann über einen Anschluss 109 mit einer Ansteuergleichspannung im Bezug auf die Leitungen 103, 104, 105 beaufschlagt werden, um über elektrostatische Kräfte die Brücke gegen die Leitungen 103, 104, 105 zu ziehen. Zur Vermeidung eines Kurzschlusses ist im Bereich unterhalb der Brücke über die Leitungen 103, 104, 105 eine Isolationsschicht 110 gelegt (siehe hierzu insbesondere die Schnittanordnung).The bridge can be acted upon via a
Das Bauteil 101 lässt sich durch ein Ersatzschaltbild gemäß
Die erste Koppelkapazität 115 wird durch die Schnittfläche der Signalleitung 105 mit der Brücke 107 definiert und kann gemäß den in
Prinzipiell ist durch diesen Aufbau eine Entkoppelung des Steuersignals der schaltbaren Kapazitäten von den Leitungen 103, 104 und 105 verwirklicht, weshalb die Möglichkeit gegeben ist, solche Schaltelemente in Umschaltern, Verteilnetzwerken oder Phasenschiebern einzusetzen.In principle, a decoupling of the control signal of the switchable capacitors from the
Es hat sich jedoch herausgestellt, dass eine derartige Brücke mit gleichmäßigen reproduzierbaren Schalteigenschaften nicht einfach, wenn überhaupt, zu realisieren ist.It has been found, however, that such a bridge with uniform, reproducible switching characteristics can not be realized easily, if at all.
Der Erfindung liegt die Aufgabe zugrunde, ein oben beschriebenes Bauteil mit im Hinblick auf das Steuersignal entkoppelten Koppelkapazitäten bereitzustellen, das verbesserte Schaltparameter besitzt.The invention has for its object to provide a component described above with decoupled in terms of the control signal coupling capacitances, which has improved switching parameters.
Diese Aufgabe wird durch die Merkmale des Anspruchs 1 gelöst.This object is solved by the features of
In dem Unteranspruch ist eine vorteilhafte und zweckmäßige Weiterbildung der Erfindung angegeben.In the dependent claim an advantageous and expedient development of the invention is given.
Zunächst geht die Erfindung von einem Bauteil zur Impedanzänderung bei einem koplanaren Wellenleiter aus, der zwei Masseleitungen und eine zwischen den Masseleitungen liegende Signalleitung sowie ein leitendes Verbindungselement umfasst, das zu den beiden Masseleitungen und der Signalleitung eine Überdeckungsfläche aufweist und isoliert ist, so dass jeweils ein Kondensator ausgebildet wird. Der Kern der Erfindung liegt nun darin, dass das Verbindungselement und die Leitungen derart angeordnet bzw. ausgestaltet sind, dass der jeweilige Kondensator zwischen den Masseleitungen und dem Verbindungselement eine unveränderbare Kapazität, jedoch der Kondensator zwischen dem Verbindungselement und Signalleitung eine veränderbare Kapazität aufweist. Dieser Vorgehensweise liegt die Erkenntnis zugrunde, dass es sehr schwierig ist, bei dem oben zuletzt aufgeführten Ausführungsbeispiel die schaltbare Brücke außen, d.h. in
In einer erfindungsgemäßen Ausführungsform ist mit gleichen Vorteilen die Koppelkapazität zur Signalleitung unveränderbar, jedoch die Koppelkapazitäten zu den jeweiligen Masseleitungen veränderbar ausgeführt.In an embodiment according to the invention, the coupling capacitance to the signal line is unchangeable with the same advantages, but the coupling capacitances to the respective ground lines are variable.
In beiden Fällen liegen die Koppelkapazitäten in Serie mit einer Induktivität und bilden einen Schwingkreis, dessen Resonanzfrequenz durch die veränderbare Kapazität bzw. Kapazitäten zwei Arbeitspunkte wiederspiegeln kann, z.B. Transmission und Reflexion eines Signals mit vorgegebener Frequenz. Für die gewünschte Funktion des Schwingkreises ist somit ausreichend, wenn eine Koppelkapazität schaltbar ist.In both cases, the coupling capacitances are in series with an inductance and form a resonant circuit whose resonant frequency can reflect two operating points due to the variable capacitance or capacitance, for example transmission and reflection of a signal with a predetermined frequency. For the desired function of the resonant circuit is thus sufficient if a coupling capacitance is switchable.
In einer beispeilhaften Ausgestaltung ist das Verbindungselement mechanisch derart, vorzugsweise elastisch, verformbar, dass ein Abstand zwischen dem Verbindungselement und der Leitung, die zusammen mit dem Verbindungselement die veränderbare Kapazität bildet, im Bereich der Überdeckungsfläche, z.B. über elektrostatische Kräfte, veränderbar ist.In an exemplary embodiment, the connecting element is mechanically deformable, preferably elastically, such that a distance between the connecting element and the line, which forms the variable capacitance together with the connecting element, in the region of the covering surface, e.g. about electrostatic forces, is changeable.
Es ist jedoch auch möglich, dass die Signalleitung oder die Masseleitungen in einem Teilbereich, in dem sie das verbindungselement überdeckt bzw. überdecken mechanisch derart mit Abstand verformbar ist bzw. sind, dass sich der Abstand im Bereich der jeweiligen Überdeckungsfläche einstellen lässt. Bei dieser Ausführungsform werden somit nicht die Masseleitungen durch eine Brücke verbunden, sondern es ist z.B. in der Signalleitung eine Brücke vorgesehen, unter der das Verbindungselement läuft, wobei das Verbindungselement durch Überdeckungsflächen mit den Masseleitungen und zumindest einer dazwischen eingelagerten Isolationsschicht kapazitiv fest an die Masseleitungen angekoppelt wird. Diese Variante hat somit den Vorteil, dass die Brücke unabhängig vom Abstand der Masseleitungen ausgeführt werden kann und zugleich die kapazitive Koppelung zwischen Masseleitungen und Signalleitungen mit vergleichsweise höherer Reproduzierbarkeit geschaltet werden kann.However, it is also possible that the signal line or the ground lines in a partial area in which it covers or cover the connecting element is mechanically deformable or at a distance such that the distance in the area of the respective covering area can be adjusted. Thus, in this embodiment, the ground lines are not connected by a bridge, but it is e.g. provided in the signal line, a bridge under which the connecting element runs, wherein the connecting element is capacitively coupled by overlapping surfaces with the ground lines and at least one interposed therebetween insulation layer to the ground lines. This variant thus has the advantage that the bridge can be performed independently of the distance of the ground lines and at the same time the capacitive coupling between ground lines and signal lines can be switched with relatively higher reproducibility.
Zum Schalten des veränderbaren Kondensators ist das Verbindungselement vorzugsweise mit einer Spannung beaufschlagbar. Damit können elektrostatische Kräfte beispielsweise auf den Kondensator zwischen Verbindungselement und Signalleitung genutzt werden, um dessen Kapazität z.B. zwischen zwei Werten umschalten zu können.For switching the variable capacitor, the connecting element is preferably acted upon by a voltage. Thus, electrostatic forces can be used, for example, on the capacitor between the connecting element and the signal line in order to switch its capacity, for example, between two values.
Bei einem Verfahren zur Herstellung der soeben beschriebenen Bauelemente zur Impedanzänderung bei einem koplanaren Wellenleiter, der zwei Masseleitungen und eine zwischen den Masseleitungen liegende Signalleitung sowie ein leitendes Verbindungselement umfasst, das zu den beiden Masseleitungen und der Signalleitung eine Überlappungsfläche aufweist und elektrisch isoliert ist, so dass jeweils ein Kondensator ausgebildet wird, liegt der wesentliche Aspekt in den folgenden Verfahrensschritten:
- Auf ein Substrat werden eine oder mehrere leitende Schichten zur Ausbildung des Verbindungselements abgeschieden und anschließend, vorzugsweise fotolithographisch strukturiert. Darauf wird eine Isolationsschicht abgeschieden und auf die Isolationsschicht die Masseleitungen sowie die Signalleitung mit einer Brücke über das Verbindungselement aufgebaut. Durch dieses Verfahren erhält man ein Bauteil, bei welchem das Verbindungselement über Kondensatoren mit fester Kapazität an die Masseleitungen und an die Signalleitung über einen in seiner Kapazität veränderbaren Kondensator, der sich jedoch mit vergleichsweise guter Reproduzierbarkeit schalten lässt, angekoppelt ist.
- One or more conductive layers for forming the connecting element are deposited on a substrate and then patterned, preferably photolithographically. An insulation layer is deposited thereon and the grounding lines and the signal line with a bridge over the connecting element are built up on the insulation layer. By this method, a component is obtained in which the connecting element is coupled via capacitors having a fixed capacitance to the ground lines and to the signal line via a capacitor whose capacitance is variable, but which can be switched with comparatively good reproducibility.
Kommt ein nicht hoch isolierendes Substrat zur Anwendung, ist es außerdem vorteilhaft, wenn vor dem Aufbau der Struktur auf dem Substrat zunächst eine Isolationsschicht erzeugt wird. Dies kann beispielsweise durch thermische Oxidation oder das Aufbringen einer PECVD-Schicht (PECVD steht für Plasma Enhanced Chemical Vapor Deposition) erfolgen. Thermisches Oxid ist im Hinblick auf eine niedrige Dämpfung eines Hochfrequenzsignals vorteilhaft.If a substrate which is not highly insulating is used, it is also advantageous if an insulating layer is first produced on the substrate prior to the structure of the structure. This can be done for example by thermal oxidation or the application of a PECVD layer (PECVD stands for plasma enhanced chemical vapor deposition). Thermal oxide is advantageous in terms of low attenuation of a high frequency signal.
Im Weiteren ist es bevorzugt, wenn die auf das Verbindungselement deponierte Isolationsschicht strukturiert wird. Auf diese Weise kann nicht nur ein Anschluss für den Anschluss des Verbindungselements freigelegt werden, sondern gegebenenfalls auch Bereiche auf Anschlussbalken, die für eine spätere Galvanik zur elektrischen Verbindung von Abschnitten, auf denen Strukturen "aufgalvanisiert" werden sollen, genutzt werden.Furthermore, it is preferred if the insulation layer deposited on the connecting element is structured. In this way, not only a connection for the connection of the connecting element can be exposed, but possibly also areas on connection bars, which are used for a subsequent electroplating for electrical connection of sections on which structures are to be "galvanized".
Vorzugsweise werden nämlich die Masseleitungen und zumindest ein Teil der Signalleitungen über einen Galvanikschritt erzeugt. Hierzu ist es vorteilhaft, wenn zunächst eine Startschicht abgeschieden wird. Diese Startschicht wird günstigerweise über einen Lift-Off-Prozess strukturiert. Damit wird vermieden, dass eine Schädigung des bereits auf das Verbindungselement aufgebrachten Dielektrikums eintritt. Zudem braucht nicht darauf geachtet zu werden, ob die Startschicht selektiv zum Material, aus dem das Verbindungselement besteht, strukturiert werden kann.Namely, the ground lines and at least part of the signal lines are preferably generated via a galvanic step. For this purpose, it is advantageous if initially a starting layer is deposited. This starting layer is conveniently structured via a lift-off process. This prevents damage to the dielectric already applied to the connecting element. In addition, it is not necessary to pay attention to whether the starting layer can be structured selectively with respect to the material of which the connecting element is made.
Für den weiteren Aufbau der Leitungen mit Brücke über das Verbindungselement im Bereich der Signalleitung ist es vorteilhaft, wenn eine Opferschicht aufgebracht und strukturiert wird. Dabei ist der Bereich der späteren Brücke ebenfalls mit der Opferschicht abgedeckt. Nun kann in einem Galvanikschritt jeder freigelegte Bereich der Opferschicht, wenn zusätzlich eine Startschicht in diesem Bereich vorhanden ist, galvanisch verstärkt werden. Vorzugsweise lässt man die galvanische Schicht so weit aufwachsen, dass sie über die Opferschicht überlappt und im Schnitt sozusagen eine Pilzstruktur entsteht.For the further construction of the lines with bridge over the connecting element in the region of the signal line, it is advantageous if a sacrificial layer is applied and patterned. The area of the later bridge is also covered with the sacrificial layer. Now, in an electroplating step, each exposed region of the sacrificial layer, if there is additionally a start layer in this region, can be galvanically reinforced. Preferably, the galvanic layer is allowed to grow to such an extent that it overlaps over the sacrificial layer and, as it were, creates a mushroom structure.
In einem weiteren Schritt wird nun über die Opferschicht mit galvanischen Verstärkungen eine weitere Metallisierung gelegt und strukturiert. Hierdurch wird in erster Linie die Brücke der Signalleitung geschaffen, wobei die verbleibenden Bereiche vorzugsweise in der Draufsicht entsprechend der Kontur der Signalleitung und der Masseleitungen geformt werden. Die Opferschicht wird daraufhin vorzugsweise anisotrop bis auf den Bereich unter der Brücke entfernt.In a further step, a further metallization is now laid over the sacrificial layer with galvanic reinforcements and structured. As a result, the bridge of the signal line is provided in the first place, wherein the remaining areas are preferably formed in plan view according to the contour of the signal line and the ground lines. The sacrificial layer is then preferably anisotropically removed to the area under the bridge.
Auf diese Maßnahmen lassen sich in einem anschließenden Schritt, ohne Gefahr zu laufen, die Brücke zu beschädigen, beispielsweise Verbindungsstege für den Galvanikschritt entfernen. Derartige Verbindungsstege sind notwendig, um beim Galvanikschritt alle Bereiche, in welchen auf einer Startschicht eine galvanische Struktur aufwachsen soll, elektrisch miteinander zu verbinden.These measures can be in a subsequent step, without running the risk to damage the bridge, for example, remove connecting webs for the electroplating step. Such connecting webs are necessary in order to electrically connect all areas in which a galvanic structure is to be grown on a starting layer during the electroplating step.
Schließlich wird die Opferschicht auch unter der Brückenmetallisierung entfernt, womit ein Bauteil geschaffen ist, das im Wesentlichen aus einem koplanaren Wellenleiter besteht, bei welchem die Masseleitungen jeweils über einem durchgehenden Verbindungselement kapazitiv gekoppelt sind und die Signalleitung über eine flexible Brücke, d.h. eine schaltbare Brücke, ebenfalls mit dem Verbindungselement kapazitiv gekoppelt ist. Damit lässt sich an dieser Stelle die Impedanz durch beaufschlagen des isolierten Verbindungselements mit einer Steuerspannung, was elektrostatische Kräfte auf die Brücke mit entsprechender Positionsverschiebung der Brücke zur Folge hat, ändern.Finally, the sacrificial layer is also removed under the bridge metallization, thus providing a device consisting essentially of a coplanar waveguide in which the ground lines are each capacitively coupled across a continuous connector and the signal line is connected via a flexible bridge, i. a switchable bridge is also capacitively coupled to the connection element. Thus, at this point, the impedance can be changed by applying the isolated connection element to a control voltage, which results in electrostatic forces on the bridge with corresponding position shift of the bridge.
Die Auswirkung ist eine Kapazitätsänderung, die in Bezug auf ein Ersatzschaltbild einer solchen Struktur weiter unten im Zusammenhang mit den Ausführungsbeispielen noch ausführlich erläutert wird.The effect is a capacitance change, which will be explained in more detail below with reference to an equivalent circuit diagram of such a structure in connection with the exemplary embodiments.
Nähere Ausführungsbeispiele eines koplanaren Wellenleiters sind in den nachfolgenden Zeichnungen unter Angabe weiterer Vorteile und Einzelheiten dargestellt.Further embodiments of a coplanar waveguide are shown in the following drawings, indicating further advantages and details.
Es zeigen
- Fig. 1a und 1b
- in schematischer Darstellung ein erstes HF-Schaltelement mit integrierter Steuerspannungs- Entkoppelung in einer Draufsicht (
Fig. 1a ) und einem Schnitt entlang der Schnittlinie I-I inFig. 1a (Fig. 1b ), - Fig. 2a und 2b
- ein weiterer Hochfrequenzschalter in entsprechenden Ansichten,
- Fig. 3
- ein Ersatzschaltbild, das für beide Hochfrequenzschalter nach
Fig. 1a und 1b , bzw.Fig. 2a und 2b zutrifft, - Fig.
4a bis 41 - unterschiedliche Prozessstadien bei der Herstellung eines Hochfrequenzschalters gemäß der
Fig. 1a und 1b jeweils in perspektivischer schematischer Darstellung, - Fig. 5a und 5b
- ein Hochfrequenzschalter in der Draufsicht (
Fig. 5a und einem Schnitt entlang der Schnittlinie V-V (Fig. 5b ), der aus dem Stand der Technik bekannt ist und - Fig. 6
- ein elektrisches Ersatzschaltbild für den Hochfrequenzschalter gemäß der
Fig. 5a und 5b .
- Fig. 1a and 1b
- a schematic representation of a first RF switching element with integrated control voltage decoupling in a plan view (
Fig. 1a ) and a section along the section line II inFig. 1a (Fig. 1b ) - Fig. 2a and 2b
- another high-frequency switch in corresponding views,
- Fig. 3
- an equivalent circuit for both high frequency switches after
Fig. 1a and 1b , respectively.Fig. 2a and 2b so, - Fig. 4a to 41
- different process stages in the manufacture of a high-frequency switch according to the
Fig. 1a and 1b each in a perspective schematic representation, - Fig. 5a and 5b
- a high frequency switch in plan view (
Fig. 5a and a section along the section line VV (Fig. 5b ), which is known from the prior art and - Fig. 6
- an electrical equivalent circuit diagram for the high frequency switch according to the
Fig. 5a and 5b ,
In
Wird nun über den Anschlusspad 10 eine Spannung an das Verbindungselement 6 gelegt, wirken auf die Brücke 7, die gleichstrommäßig auf Massepotential liegt, elektrostatische Kräfte, die die Brücke 7 soweit zum Verbindungselement 6 ziehen, bis die Brücke 7 auf der Isolationsschicht 11 im Bereich über dem Verbindungselement 6 aufliegt.If a voltage is now applied to the connecting
Das dazugehörige elektrische Ersatzschaltbild wird anhand von
In Unterschied zum Ausführungsbeispiel gemäß
Das entsprechende Ersatzschaltbild wie in
Um dies zu ermöglichen, weist der Hochfrequenzschalter 20 folgenden Aufbau auf: Auf dem Substrat 8 mit Isolationsschicht 9 ist nicht zuerst ein Verbindungselement angeordnet, sondern die Leitungsstrukturen des koplanaren Wellenleiters 22 mit den Masseleitungen 3, 4 und der Signalleitung 5. Im Bereich der Brücke 21 ist über den Leitungen 3, 4, 5 jeweils eine Isolationsschicht 23, 24, 25 vorgesehen. Darauf folgt ein Pfostenelement 26 jeweils auf der außenliegenden Masseleitung 3, 4. Die Pfostenelemente 26 besitzen im Schnitt betrachtet drei Schichten. Zunächst eine Startschicht 27, gefolgt von einer galvanisch aufgewachsenen Schicht 28 und abgedeckt mit einer Deckschicht 29, die elektrisch betrachtet dem Verbindungselement 6 entspricht, und aus der die Brücke 21 gebildet ist. Mit einer Ansteuerspannung kann die Pfostenstruktur 26 mit Brücke 21 über einen Anschlusspad 30 beaufschlagt werden.In order to make this possible, the high-
Für beide Prinzipien nach den
Für einen Hochfrequenzschalter gemäß
Anhand der
Gemäß
Anschließend (s.
Um den vergleichsweise hohen Widerstand von Molybdän-Tantal, insbesondere für den Bereich der Verbindung zwischen den Koppelkapazitäten zu erniedrigen, kann auch stattdessen Aluminium oder ein Mehrschicht-System aus Aluminium und Molybdän-Tantal eingesetzt werden.In order to lower the comparatively high resistance of molybdenum-tantalum, in particular for the area of the connection between the coupling capacities, aluminum or a multi-layer system of aluminum and molybdenum-tantalum can also be used instead.
Jedenfalls wird die aufgebrachte Schicht strukturiert, um hieraus das Verbindungselement 6 zu erzeugen. Dieses besteht im Bereich der späteren Masseleitungen 3, 4 aus einer Fläche 41 mit vorbestimmter Größe, um die feste Koppelkapazität 15 zu definieren, schmalen Verbindungsstegen 42 zu einer mittleren Elektrodenfläche 42, mit welcher die Kopplung zur späteren Signalleitung festgelegt wird.In any case, the applied layer is patterned to produce therefrom the connecting
Daraufhin wird eine Isolationsschicht, z.B. PECVD SiOx, beispielsweise bei 300° abgeschieden. Anstatt PECVD-SiOx kann auch Siliziumoxinitrit (SiON), Siliziumnitrit (Si3N4) oder ein anderer Isolator zum Einsatz kommen. Auch die Isolationsschicht wird strukturiert, insbesondere im Bereich der Anschlussbalken sowie an einer Anschlussstelle 43 für einen späteren Anschlusspad 10 zum Beaufschlagen des Hochfrequenzbauteils mit einer Ansteuerspannung (s.
Auf diese Schichtfolge wird gemäß
Außerdem wird mit der Startmetallisierung die Zuleitung 44 zum Anschlusspad 10 erzeugt.In addition, the
Daraufhin erfolgt die Erzeugung einer Opferschicht 45 und ihre entsprechende Strukturierung gemäß der Struktur der beabsichtigten Masseleitungen 3, 4 bzw. der Steuerleitung 5, wobei der Bereich über der Elektrode 43 zur Ausbildung der Brücke ebenfalls abgedeckt ist. Als Opferschicht 45 eignet sich beispielsweise Fotolack in einer Dicke von 3,5 bis 4 µm (
Dann wird in einem Galvanikprozess die Schicht 13 erzeugt. Als Material für den Galvanikprozess eignet sich z.B. Kupfer. Dieser Prozessschritt ist aus
In einem weiteren Prozessschritt (s.
In
Als zunächst letzter Prozessschritt wird die Opferschicht 45 auch unter der Brücke 7 entfernt, womit eine Struktur gemäß
Im Vergleich zu anderen Verfahren werden durch das soeben beschriebene Verfahren kritische Planarisierungsschritte oder Differenzätz-Schritte vermieden. Insbesondere stellt das beschriebene Verfahren eine Lösung des "Insel-Problems" dar:
- Bei der Herstellung von Phasenschiebern sollen Flächen galvanisch verstärkt werden, die am Ende des Herstellungsprozess jedoch elektrisch von anderen Flächen isoliert sind. Zur galvanischen Abscheidung müssen aber alle Flächen leitfähig miteinander verbunden sein. Daher wird es notwendig, in einem Schritt nach der galvanischen Abscheidung diese Verbindungen wieder zu entfernen. Die vorliegende Technologiefolge erlaubt die nasschemische Entfernung dieser Verbindungsleitungen ohne die mikromechanische Brücke zu zerstören.
- In the production of phase shifters surfaces are to be galvanically reinforced, but at the end of the manufacturing process are electrically isolated from other surfaces. For galvanic deposition but all surfaces must be conductively connected to each other. Therefore, it becomes necessary to remove these compounds in one step after the electrodeposition. The present technology sequence allows the wet-chemical removal of these connection lines without destroying the micromechanical bridge.
Claims (2)
- Component (1, 20) for changing the impedance in a coplanar waveguide (2, 22), comprising two earth lines (3, 4) and a signal line (5) lying between the earth lines (3, 4), and also a conductive connecting element (6, 21, 29), which has an area of overlap with respect to the two earth lines (3, 4) and the signal line (5) and is electrically insulated, such that in each case one capacitor is formed, wherein the connecting element (6, 21, 29) and the lines (3, 4, 5) are arranged or configured in such a way that the respective capacitor between the earth line (3, 4) and the connecting element (6, 21, 29) has a variable capacitance, but the capacitor between the connecting element (6, 21, 29) and the signal line (5) has an invariable capacitance, characterized in that the earth lines (3, 4), in a partial region (7) in which they overlap the connecting element (6) at a distance, are mechanically deformable in such a way that it is possible to set the distance in the region of the area of overlap.
- Component according to Claim 1, characterized in that voltage can be applied to the connecting element (6, 21, 28).
Applications Claiming Priority (2)
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DE10342938A DE10342938A1 (en) | 2003-09-17 | 2003-09-17 | Component for impedance change in a coplanar waveguide and method for manufacturing a device |
PCT/DE2004/001658 WO2005036580A1 (en) | 2003-09-17 | 2004-07-24 | Component for modifying the impedance of a coplanar waveguide and method for producing such a component |
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US7851709B2 (en) * | 2006-03-22 | 2010-12-14 | Advanced Semiconductor Engineering, Inc. | Multi-layer circuit board having ground shielding walls |
FR2901781B1 (en) | 2006-05-31 | 2008-07-04 | Thales Sa | RADIOFREQUENCY OR HYPERFREQUENCY MICRO-SWITCH STRUCTURE AND METHOD OF MANUFACTURING SUCH STRUCTURE |
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DE10100296A1 (en) * | 2001-01-04 | 2002-07-11 | Bosch Gmbh Robert | Device with a capacitor with variable capacitance, in particular high-frequency microswitches |
JP3818176B2 (en) * | 2002-03-06 | 2006-09-06 | 株式会社村田製作所 | RFMEMS element |
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Title |
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YOSHIDA Y. ET AL: "A novel grounded coplanar waveguide with cavity structure", PROCEEDINGS OF THE IEEE 16TH. ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS. MEMS 2003. KYOTO, JAPAN, AN. 19 - 23, 2003, 19 January 2003 (2003-01-19), KYOTO, JAPAN, pages 140 - 143, XP010636929 * |
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US20070229198A1 (en) | 2007-10-04 |
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