EP1631983A1 - Method for simultaneously obtaining a pair of substrates covered by a useful layer - Google Patents

Method for simultaneously obtaining a pair of substrates covered by a useful layer

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Publication number
EP1631983A1
EP1631983A1 EP04767237A EP04767237A EP1631983A1 EP 1631983 A1 EP1631983 A1 EP 1631983A1 EP 04767237 A EP04767237 A EP 04767237A EP 04767237 A EP04767237 A EP 04767237A EP 1631983 A1 EP1631983 A1 EP 1631983A1
Authority
EP
European Patent Office
Prior art keywords
layer
substrate
useful layer
silicon
useful
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04767237A
Other languages
German (de)
French (fr)
Inventor
Bruno Ghyselen
Cécile Aulnette
Benoit Bataillou
Carlos Mazure
Hubert Moriceau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Soitec SA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP1631983A1 publication Critical patent/EP1631983A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Definitions

  • the present invention relates to a process for the concomitant production of at least two structures, each comprising at least one useful layer transferred onto a substrate for applications in the fields of electronics, optoelectronics or optics.
  • Several methods of layer transfer are known from the state of the art. One of them consists in implanting atomic species under the surface of a source substrate, so as to create there a weakening zone which delimits a thin layer. Next, the free face of this thin layer is brought into contact with a support substrate, then detachment of said thin layer from the rest of the source substrate and its transfer to said support substrate.
  • Smart Cut For the description of this process, reference may be made to the literature concerning the process known under the trademark "Smart Cut".
  • This type of process generates a residue of source substrate which must be recycled so that it can be reused during a new layer transfer. This involves polishing and finishing operations that can be long and costly, both • the price of the equipment used to perform by the time spent achieving them. In addition, for certain extremely hard materials such as silicon carbide, the above-mentioned recycling steps can prove to be very long and tedious.
  • the object of the present invention is to solve the aforementioned drawbacks and to provide an economical layer transfer method, limiting the number of source substrates to be recycled.
  • the invention relates to a process for the concomitant production of at least one pair of structures, each comprising at least one useful layer transferred onto a substrate, for applications in the fields of electronics, optoelectronics or 1 Optical.
  • this method comprises the following stages consisting in: a) preparing a structure known as of row 1, comprising a useful layer transferred onto a support substrate, b) forming a weakening zone inside said useful layer of the rank 1 structure, by implantation of atomic species, so as to define there two layers, called “useful front layer” and “rear useful layer", the rear useful layer being located between, said useful layer, before and said support substrate, c) adhering a stiffening substrate to the free surface of said useful front layer, d) detaching the stack of layers obtained in step c), along said embrittlement zone, by applications constraints, so as to obtain two so-called rank 2 structures, the first comprising at least said support substrate and said rear working layer and the second comprising at least said stiffening substrate and said useful layer the front.
  • the cycle of the operations described in steps b) to d) is repeated, using as starting structure at least one of the structures of rank 2 and using stiffening substrates and it is repeated, where appropriate, this cycle of operations at least once, from at least one of the structures of the following row (s).
  • the transfer operation from step a) comprises a bonding step, the useful layer coming directly into contact with the support substrate, or one or more intermediate layers being inserted between the useful layer and the support substrate.
  • the adhesion operation of step c) is carried out by bonding, the stiffening substrate coming directly into contact with the free surface of the useful front layer, or else at least one intermediate layer being inserted between the substrate.
  • the intermediate layer is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials with high permittivity, diamonds and constrained silicon;
  • the intermediate layer is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials with high permittivity, diamond;
  • At least one of the elements among the support substrate, the stiffening substrate and the useful layer is made of a semiconductor material;
  • the support substrate comprises at least one layer of a material chosen from silicon, silicon carbide, sapphire, diamond, germanium, quartz, stabilized zircane yttrium and an alloy of silicon carbide;
  • the stiffening substrate comprises at least one layer of a material chosen from silicon,
  • the support substrate is made of monocrystalline or polycrystalline silicon, the useful layer of monocrystalline silicon, the stiffening substrate of silicon, mono or polycrystalline ⁇ lin, the intermediate layer and the intermediate layer of silicon oxide; the useful layer of the rank 1 structure is obtained by forming an initial weakening zone inside a source substrate, this initial weakening zone separating said useful layer from the rest of the source substrate, by applying this source substrate on said support substrate then by detachment of said remainder along the initial embrittlement zone; - The initial embrittlement zone is formed by implantation of atomic species or is a porous zone.
  • FIGS. 1A to 1C are diagrams illustrating the different stages of a process obtaining a structure comprising a useful layer transferred onto a support substrate
  • FIGS. 2A to 2C are diagrams illustrating an alternative embodiment of the method shown in FIGS. 1A to IC according to which a structure is obtained comprising a useful layer transferred onto a substrate using an intermediate layer
  • FIGS. 1A to 1C are diagrams illustrating the different stages of a process obtaining a structure comprising a useful layer transferred onto a support substrate
  • FIGS. 2A to 2C are diagrams illustrating an alternative embodiment of the method shown in FIGS. 1A to IC according to which a structure is obtained comprising a useful layer transferred onto a substrate using an intermediate layer
  • FIGS. 3A to 3F are diagrams illustrating the different stages of a first embodiment of the method for the concomitant production of at least one pair of structures according to the invention
  • Figures 4A to 4F are diagrams illustrating an alternative embodiment of the method shown in Figures 3A to 3F
  • - And Figures 5A to 5F are diagrams illustrating the different stages of a second embodiment of the method according to the invention.
  • the process according to the invention is carried out using a first structure 5 or 5 ′, called a row
  • a source substrate 1 internally having a weakening zone 4 delimiting two parts, namely a useful layer 11 and the rest 12 of this source substrate or rear part.
  • this weakening zone 4 is called “initial weakening zone”.
  • the source substrate 1 has a face 13, called “front face”, intended to come into contact with a support substrate 2 which will be described later.
  • the source substrate 1 is chosen from semiconductor materials, in particular those commonly used for applications in the fields of electronics, optoelectronics or optics.
  • it may be silicon, silicon carbide, sapphire, diamond, germanium, silicon-germanium, compounds III-V and compounds II-VI.
  • Compounds III-V are compounds of which one of the elements belongs to column III of the periodic table and the other to column V, such as for example, gallium nitride (GaN), gallium arsenide (AsGa) or indium phosphide (InP).
  • Compounds II-VI are compounds of which one of the elements belongs to column II of the periodic table and the other to column VI, such as for example, cadmium telluride (CdTe).
  • the source substrate 1 can also be a composite substrate, that is to say a substrate composed of a solid part, for example made of silicon, on which rests a buffer layer, for example made of silicon-germanium (SiGe).
  • the initial embrittlement zone 4 can be obtained by implantation of atomic species.
  • implantation of atomic species we mean any bombardment of atomic species, molecular or ionic, capable of introducing these species into a material, with a maximum concentration of these species located at a determined depth relative to the bombarded surface 13.
  • the implantation of the atomic species in said source substrate 1 can be carried out by for example, using an ion beam implanter or a plasma immersion implanter.
  • this implantation is carried out by ion bombardment.
  • the implanted ionic species is hydrogen.
  • Other ionic species can advantageously be used alone or in combination with hydrogen, such as rare gases (helium for example).
  • the effect of this implantation is to create in the volume of the source substrate 1 and at an average depth of ion penetration, the initial weakening zone 4 which extends substantially parallel to the plane of the front face 13.
  • the useful layer 11 s' extends between the front face 13 and this weakening zone 4.
  • the initial embrittlement zone 4 can also consist of a porous layer obtained for example as described in document EP-0 849 788.
  • the support substrate 2 has a role of mechanical support and therefore generally has a thickness of at least about 300 micrometers. It preferably consists of any mono or polycrystalline semiconductor material commonly used in the aforementioned applications.
  • This support substrate 2 can be a solid monolayer substrate chosen for example from silicon, silicon carbide, sapphire, diamond, germanium, quartz, stabilized zircane yttrium (Zr0 2 (Y0 3 )) or an alloy of silicon carbide.
  • the support substrate 2 has a face 20, called "front face" because it is intended to receive the front face 13 of the source substrate 1. Then, as shown in FIG.
  • the front face 13 of the useful layer 11 is bonded directly to the support substrate 2, that is to say without an intermediate layer.
  • this bonding is carried out by molecular adhesion.
  • the remainder 12 is detached along the initial embrittlement zone 4 by application of stresses (see FIG. IC).
  • One of the following techniques is used for this purpose: application of constraints of mechanical or electrical origin, chemical etching or supply of energy, for example the use of a laser, of microwaves , inductive heating, heat treatment in an oven.
  • FIGS. 2A to 2C illustrate an alternative embodiment of the method which has just been described in conjunction with FIGS. 1A to IC but which differs from this in that at least one intermediate layer 3 is inserted between the useful layer 11 and the support substrate 2.
  • a single intermediate layer 3 has been shown in FIGS. 2A to 2C and in FIGS. 5A to 5F.
  • each of these intermediate layers 3 is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials with high permittivity and diamond.
  • This intermediate layer 3 can be obtained by chemical vapor deposition techniques or any other technique known to those skilled in the art, carried out either on the front face 20 of the support substrate 2, or on the front face 13 of the source substrate 1 , either on these two front faces and this, before these two substrates are applied one against the other.
  • this intermediate layer 3 is an oxide layer, it can also be obtained by thermal oxidation of one or the other of the two substrates 1 or 2.
  • a first structure of rank 1, referenced 5 ′ is obtained, comprising the source substrate 2, the useful layer 11 and the intermediate layer 3 inserted between them.
  • postponed for a rank 1 structure means that a cc ⁇ iche. useful layer is transferred onto a support substrate by a process comprising at least one bonding step, in the presence or absence of at least one intermediate layer 3.
  • the useful layer 11 can be transferred on the support substrate 2 by the BESOI technique mentioned above, in the presence or absence of the intermediate layer 3.
  • FIGS. 3A to 3C illustrate a complete cycle of steps of a first embodiment of the method in accordance with invention allowing the concomitant production of a pair of structures each comprising a useful layer transferred onto a substrate.
  • a weakening zone 6 is formed inside the useful layer 11 of the structure 5 of rank 1 obtained previously, by implantation of atomic species according to the technique described above for the obtaining the initial embrittlement zone 4.
  • the next step illustrated in FIG. 3B consists in making a stiffening substrate 71 adhere to the free surface 130 of said front useful layer 110, by bonding, preferably by direct bonding by molecular adhesion.
  • the last step of the cycle illustrated in FIG. 3C consists in detaching the stack of layers obtained in the previous step, along the said .fragi area 1 s-ati on 6, by applying constraints, according to techniques known to a person skilled in the art and described previously together with FIGS. IC and 2C. Two structures 51 and 52 are thus obtained, called row 2 structures.
  • the first structure 51 comprises the support substrate 2 and the rear useful layer 120 and the second structure 52 comprises the stiffening substrate 71 and the front useful layer 110.
  • the layer useful 11 must have a sufficient thickness so that after the detachment step the two useful layers 110 and 120 obtained do not exhibit any defects or blisters.
  • the thicknesses of the two useful layers 110 and 120 can be identical or different depending on the implantation depth of the atomic species and therefore on the location of the embrittlement zone 6.
  • the two structures 521 and 522 of rank 3 resulting from the structure 52 of rank 2 respectively comprise the stiffener 71 and the layer u rear tile 111 for the first and the stiffener 72 and the front useful layer 112 for the second, while the two structures 511 and 512 of rank 3 resulting from the structure 51 of rank 2 respectively comprise the stiffener 73 and the useful front layer 122 for the first and the support substrate 2 and the rear useful layer 121 for the second.
  • Figures _4A to 4F illustrate an alternative embodiment of the method which differs from that described jointly with Figures 3A to 3F in that at least one intermediate layer 8, respectively 8 ", are inserted between the stiffening substrates 71, respectively 73 and the useful layer opposite. It will be noted that in the figures, a single 8.8 "intermediate layer has been shown for simplification purposes.
  • This intermediate layer 8 or 8 can be produced for example by chemical vapor deposition or by any other layer deposition technique known to those skilled in the art.
  • the intermediate layers 8, respectively 8 can also be obtained by oxidation of the stiffener substrate 71, respectively 73. This deposition can be carried out either on the stiffener before its application on the useful layer, or on the latter, preferably before the step of implantation of atomic species aimed at forming the embrittlement zone 6.
  • the intermediate layer 8 or 8 is then bonded to the facing layer, preferably by bonding by molecular adhesion.
  • the intermediate layers 8, 8" are made of a material chosen from silicon oxide ( Si0 2 ), silicon nitride (Si 3 N), insulating materials with high permittivity and diamond.
  • FIGS. 5A to 5F illustrate a second mode of construction. embodiment of the method of the invention which differs from that described jointly with FIGS.
  • the expression "causing a stiffening substrate to adhere to a useful layer” includes the case where there is intimate contact between the stiffener and the useful layer and the case where at least one layer interlayer 8, 8 'or 8 "is present between them.
  • stiffening substrate is understood to mean any type of substrate having a role of mechanical support and making it possible to take off the useful layer from the substrate from which it comes.
  • the choice of the nature of the stiffener 71, 72, 73 depends on the final application targeted for the structure obtained.
  • the stiffening substrates 71, 72 and 73 can be chosen from the examples given for the support substrate 2.
  • the various methods which have just been described and their variants make it possible to obtain at least one pair of structures at the end of each cycle. of the method for a single source substrate 1 to be recycled, so that they are more economical and more profitable than the known methods of the prior art which required the recycling of the source substrate for each structure formed.
  • the operator can choose to apply stiffeners of the same type or of different types and with or without an intermediate layer 8, 8 ', 8 ". This results in the possibility of concomitantly obtaining structures comprising stacks of different layers.
  • the embrittlement zone 6 it is also possible to form the embrittlement zone 6 so that the rear useful layers 120, 111 or 121 are very thin, for example of a thickness less than 50 nm, while the ui- il-as. before neighbors, respectively referenced 110, 112 or 122, are much thicker.
  • the thickness of the useful front layer associated with that of the stiffener which is applied against allows the subsequent annealing heat treatment to be carried out without deformation or appearance of blisters at the rear useful layer. This gives a postponed rear useful layer much thinner than what could be obtained until now.
  • implantation processes such as the Smart Cut process.
  • the stages of implantation of atomic species carried out on substrates of rank 1 or higher concentrate the defects in the useful layers before 110 or 122, while the rear useful layers 120 or 121 which will not have directly undergone the 'implantation will present an area with defects related to implantation and detachment extending over a thickness less significant at the detachment zone than that of the front layer.
  • Example 1 A 5 ′ structure of SOI substrate type comprising a support substrate 2 made of monocrystalline silicon, an intermediate layer 3 made of silicon oxide Si0 2 with a thickness of 20 nm and a useful layer 11 is used as the rank 1 structure. made of 1 in single crystal silicon with a thickness and thickness of 1.5 ⁇ m.
  • the embrittlement zone 6 is formed by implantation of hydrogen ions according to an implantation energy of the order of 150 keV and an implantation dose of the order of 6.10 16 H + / cm 2 .
  • a rear useful layer 120 with a thickness of 20 nm is thus formed.
  • a stiffener 71 is then applied in monocrystalline silicon covered with an intermediate layer 8 of silicon oxide Si0 2 with a thickness of 20 nm and
  • the SOI rank 2 substrate referenced 52 ′ After preparation of the surfaces, the useful front layer 112 has a thickness of the order of 0.6 microns and the rear useful layer 111 a thickness of the order of 0.6 microns.
  • a stiffener 72 is used in monocrystalline silicon covered with an oxide layer 8 'silicon with a thickness of 20 nm (20 nanometers) and two rank 3 SOI substrates are obtained, referenced

Abstract

The invention relates to a method for simultaneously obtaining at least one pair of structures (51, 52) each having a useful layer (110, 120) placed on a substrate (71,2). This method is characterized by comprising the following steps consisting of: a) preparing a row structure (1) having a useful layer placed on a supporting substrate (2); b) forming a fragilization area inside said useful layer whereby defining a front useful layer (110) and a rear useful layer (120); c) adhering a stiffening substrate (71) to said front useful layer (110); d) removing the stack of layers along the fragilization area in order to obtain two row structures (2), the first (51) containing the supporting substrate (2) and the rear useful area (120), and the second (52) containing the stiffening substrate (71) and the front useful layer (110). The invention is for use in the fields of electronics, optoelectronics or optics.

Description

PROCEDE D'OBTENTION CONCOMITANTE D'UNE PAIRE DE SUBSTRATS RECOUVERTS D'UNE COUCHE UTILE PROCESS FOR OBTAINING A PAIR OF SUBSTRATES COATED WITH A USEFUL LAYER
La présente invention concerne un procédé d'obtention concomitante d'au moins deux structures comprenant chacune au moins une couche utile reportée sur un substrat pour des applications dans les domaines de l'électronique, 1 'opto-électronique ou l'optique. On connaît d'après l'état de la technique, plusieurs procédés de report de couche . L'un d'entre eux consiste à implanter des espèces atomiques sous la surface d'un substrat source, de façon à y créer une zone de fragilisation qui délimite une couche mince. On procède ensuite à la mise en contact de la face libre de cette couche mince avec un substrat support, puis au détachement de ladite couche mince, du reste du substrat source et à son report sur ledit substrat support. Pour la description de ce procédé on pourra se référer à la littérature concernant le procédé connu sous la marque déposée "Smart Cut". Ce type de procédé génère un reste de substrat source qu'il- faut recycler pour_ qu'il, puisse être réutilisé lors d'un nouveau transfert de couche. Ceci implique des opérations de polissage et de finition qui peuvent être longues et coûteuses, tant • par le prix du matériel utilisé pour les effectuer que par le temps passé à leur réalisation. En outre, pour certains matériaux extrêmement durs comme le carbure de silicium, les étapes de recyclage précitées peuvent se révéler très longues et fastidieuses. On connaît également un procédé de transfert de couche connu sous l'acronyme "BESOI" de la terminologie anglo-saxonne "Bond and Etch Back Silicon On Insulator", selon lequel après avoir collé par adhésion moléculaire un substrat source sur un substrat support, on procède au rodage et/ou à la gravure par attaque chimique puis au polissage de la surface libre (ou face arrière) de ce substrat source, jusqu'à obtenir sur ledit support, une couche mince de l'épaisseur souhaitée. On αotexa qu'un tel procédé suppose la destruction de la majeure partie du substrat source à chaque structure réalisée, de sorte qu'il n'est pas rentable d'un point de vue économique, notamment lorsque le matériau constituant la couche mince à reporter est cher. Enfin, dans le cas particulier des substrats de type "SOI" ("SOI" étant l'acronyme de l'expression anglo-saxonne "Silicon On Insulator" qui. signifie "silicium sur isolant") qui comprennent une couche de silicium épaisse recouverte d'une couche d'oxyde de silicium (Si02) enterrée et d'une couche de silicium superficielle reportée, les mêmes problèmes de recyclage se posent pour le substrat de silicium ayant servi à former ladite couche reportée. Par ailleurs, outre les problèmes de recyclage évoqués ci-dessus, il est également difficile de transférer des couches très fines, c'est à dire dont l'épaisseur est inférieure à 100 nanomètres (100 nm) avec le procédé de type Smart Cut précité. En effet, les couches fines reportées présentent alors de nombreux défauts, tels que des cloques, dus par exemple au traitement effectué pour renforcer l'interface de collage entre cette couche fine et le substrat support. Ce problème de transfert de couches très minces de bonne qualité existe également dans les substrats SOI, dans lesquels on constate qu'en dessous d'une certaine épaisseur en particulier de la couche d'oxyde enterrée, par exemple 20 nm, la couche de silicium transférée, présente des défauts, ces derniers étant d'autant plus marqués que l'on utilise en outre un traitement thermique à haute température. A ce sujet, on peut se ré-férer à 1 "artici e de Q..-Y. Tong, G. Cita, R. Gafiteau et U. Gosele, "Low température wafer direct bonding", J. Microelectromech Syst., 3, 29, (1994). Lors des traitements thermiques, par exemple de renforcement de l'interface de collage, dit "traitement de stabilisation", intervenant après l'étape de détachement, il se forme un gaz au niveau de l'interface de collage. Dans le cas d'un substrat SOI épais, l'épaisseur de la couche transférée est importante et joue le rôle de raidisseur. Dans le cas d'un substrat SOI fin dans lequel la couche transférée et/ou la couche d'oxyde sont fines, les phénomènes précités d'absorption et d'effet raidisseur n'ont pas lieu et le dégazage conduit à l'apparition d'un mauvais collage. Par ailleurs, on sait également d'après le document WO 01/15218 que les étapes d'implantation d'espèces atomiques et de détachement créent des défauts et que ceux-ci sont concentrés majoritairement à l'intérieur de la couche à reporter. Plus celle-ci sera mince et plus elle sera de mauvaise qualité. On connaît d'après le document EP-0 867 921 un procédé d'obtention d'un substrat de type SOI comprenant des étapes de transfert de couche d'un premier substrat vers un second. Toutefois, ce procédé n'a pas pour but d'obtenir deux paires de structures en une seule étape. On connaît également d'après le document US-2002/068418 un procédé qui consiste à effectuer une implantation d'hydrogène sur les faces avant et arrière d'un substrat source recouvert d'une couche d'oxyde, de façon à définir deux plans de délamination. Deux substrats d'accueil sont ensuite appliqués sur chacune des faces opposées du substrat source, puis la séparation est effectuée le long desdits plan de délamination pour obtenir conjointement deux substrats de type SOI. Toutefois, ce procédé nécessite de maintenir ledit substrat source par des moyens de support pendant l'étape d'implantation. Ce support génère la pollution d'au moins l'une des deux faces avant ou arrière du substrat source par la présence de contaminants indésirables dans la suite du procédé. La présente invention a pour objet de résoudre les inconvénients précités et de fournir un procédé de transfert de couches économique, limitant le nombre de substrats source à recycler. A cet effet, l'invention concerne un procédé d'obtention concomitante d'au moins une paire de structures comprenant chacune au moins une couche utile reportée sur un substrat, pour des applications dans les domaines de l'électronique, l'optoélectronique ou 1 Optique. Conformément à l'invention, ce procédé comprend les étapes suivantes consistant à : a) préparer une structure dite de rang 1, comprenant une couche utile reportée sur un substrat support, b) former une zone de fragilisation à l'intérieur de ladite couche utile de la structure de rang 1, par implantation d'espèces atomiques, de façon à y définir deux couches, dites "couche utile avant" et "couche utile arrière", la couche utile arrière étant située entre, ladite, couche utile, avant et ledit substrat support, c) faire adhérer un substrat raidisseur sur la surface libre de ladite couche utile avant, d) procéder au détachement de l'empilement de couches obtenu à l'étape c) , le long de ladite zone de fragilisation, par applications de contraintes, de façon à obtenir deux structures dites de rang 2, la première comprenant au moins ledit substrat support et ladite couche utile arrière et la seconde comprenant au moins ledit substrat raidisseur et ladite couche utile avant. Selon une variante de réalisation de l'invention, on répète le cycle des opérations décrites aux étapes b) à d) en utilisant comme structure de départ au moins l'une des structures de rang 2 et en utilisant des substrats raidisseurs et on réitère, le cas échéant, ce cycle d'opérations au moins une fois, à partir d'au moins l'une des structures de rang (s) suivant (s) . De préférence, l'opération de report de l'étape a) comprend une étape de collage, la couche utile venant directement au contact du substrat support, ou bien une ou plusieurs couches intermédiaires étant insérées entre la couche utile et le substrat support. De préférence également, l'opération d'adhésion de l'étape c) se fait par collage, le substrat raidisseur venant directement au contact de la surface libre de la couche utile avant, ou bien au moins une couche intercalaire étant insérée entre le substrat raidisseur et la surface libre de la couche utile avant. De - façon avantageuse, le collage précité se fait par adhésion moléculaire. Selon d' autres caractér.i at-iquas avantageuses et non limitatives de l'invention, prises seules ou en combinaison : - la couche intermédiaire est réalisée dans un matériau choisi parmi l'oxyde de silicium (Si02) , le nitrure de silicium (Si3N4) , les matériaux isolants à forte permittivité, le diamant et le silicium contraint; - la couche intercalaire est réalisée dans un matériau choisi parmi l'oxyde de silicium (Si02) , le nitrure de silicium (Si3N4), les matériaux isolants à forte permittivité, le diamant ; - au moins l'un des éléments parmi le substrat support, le substrat raidisseur et la couche utile est réalisé dans un matériau semi-conducteur ; - le substrat support comprend au moins une couche d'un matériau choisi parmi le silicium, le carbure de silicium, le saphir, le diamant, le germanium, le quartz, le zircane stabilisé yttrium et un alliage de carbure de silicum ; - le substrat raidisseur comprend au moins une couche d'un matériau choisi parmi le silicium, le carbure de silicium, le saphir, le diamant, le germanium, le quartz, le zircane stabilisé yttrium et un alliage de carbure de silicum ; la couche utile est réalisée dans un matériau choisi parmi le silicium, le carbure de silicium, le saphir, le diamant, le germanium, le silicium-germanium, les composés III-V et les composésThe present invention relates to a process for the concomitant production of at least two structures, each comprising at least one useful layer transferred onto a substrate for applications in the fields of electronics, optoelectronics or optics. Several methods of layer transfer are known from the state of the art. One of them consists in implanting atomic species under the surface of a source substrate, so as to create there a weakening zone which delimits a thin layer. Next, the free face of this thin layer is brought into contact with a support substrate, then detachment of said thin layer from the rest of the source substrate and its transfer to said support substrate. For the description of this process, reference may be made to the literature concerning the process known under the trademark "Smart Cut". This type of process generates a residue of source substrate which must be recycled so that it can be reused during a new layer transfer. This involves polishing and finishing operations that can be long and costly, both • the price of the equipment used to perform by the time spent achieving them. In addition, for certain extremely hard materials such as silicon carbide, the above-mentioned recycling steps can prove to be very long and tedious. There is also known a layer transfer process known by the acronym "BESOI" from the English terminology "Bond and Etch Back Silicon On Insulator", according to which after having bonded a source substrate to a support substrate by molecular adhesion, launches and / or etches by chemical attack and then polishes the free surface (or rear face) of this source substrate, until a thin layer of the desired thickness is obtained on said support. It is αotexa that such a process supposes the destruction of the major part of the source substrate at each structure produced, so that it is not profitable from an economic point of view, in particular when the material constituting the thin layer to be transferred is expensive. Finally, in the particular case of "SOI" type substrates ("SOI" being the acronym of the English expression "Silicon On Insulator" which means "silicon on insulator") which comprise a thick silicon layer covered of a buried layer of silicon oxide (Si0 2 ) and of a transferred surface silicon layer, the same recycling problems arise for the silicon substrate having served to form said transferred layer. Furthermore, in addition to the recycling problems mentioned above, it is also difficult to transfer very thin layers, that is to say the thickness of which is less than 100 nanometers (100 nm) with the aforementioned Smart Cut type process. . Indeed, the deferred thin layers then have many defects, such as blisters, due for example to treatment carried out to reinforce the bonding interface between this thin layer and the support substrate. This problem of transferring very thin layers of good quality also exists in SOI substrates, in which it is noted that below a certain thickness in particular of the buried oxide layer, for example 20 nm, the silicon layer transferred, has defects, the latter being all the more marked the more heat treatment is used at high temperature. On this subject, we can refer to 1 "article of Q ..- Y. Tong, G. Cita, R. Gafiteau and U. Gosele," Low temperature wafer direct bonding ", J. Microelectromech Syst., 3, 29, (1994). During heat treatments, for example strengthening the bonding interface, called "stabilization treatment", intervening after the detachment step, a gas is formed at the interface. In the case of a thick SOI substrate, the thickness of the transferred layer is significant and plays the role of stiffener. In the case of a thin SOI substrate in which the transferred layer and / or the layer of oxide are fine, the abovementioned phenomena of absorption and stiffening effect do not take place and degassing leads to the appearance of poor bonding. Furthermore, it is also known from document WO 01/15218 that the stages of implantation of atomic species and of detachment create defects and that these are concentrated mainly within the layer to be transferred. The thinner it is, the poorer it will be. Document EP-0 867 921 discloses a method for obtaining an SOI-type substrate comprising steps of transferring a layer from a first substrate to a second. However, this method is not intended to obtain two pairs of structures in a single step. Also known from document US-2002/068418 is a method which consists in carrying out an implantation of hydrogen on the front and rear faces of a source substrate covered with an oxide layer, so as to define two planes delamination. Two receiving substrates are then applied to each of the opposite faces of the source substrate, then the separation is carried out along said delamination plane in order to obtain two SOI type substrates together. However, this method requires maintaining said source substrate by support means during the implantation step. This support generates pollution of at least one of the two front or rear faces of the source substrate by the presence of undesirable contaminants in the rest of the process. The object of the present invention is to solve the aforementioned drawbacks and to provide an economical layer transfer method, limiting the number of source substrates to be recycled. To this end, the invention relates to a process for the concomitant production of at least one pair of structures, each comprising at least one useful layer transferred onto a substrate, for applications in the fields of electronics, optoelectronics or 1 Optical. According to the invention, this method comprises the following stages consisting in: a) preparing a structure known as of row 1, comprising a useful layer transferred onto a support substrate, b) forming a weakening zone inside said useful layer of the rank 1 structure, by implantation of atomic species, so as to define there two layers, called "useful front layer" and "rear useful layer", the rear useful layer being located between, said useful layer, before and said support substrate, c) adhering a stiffening substrate to the free surface of said useful front layer, d) detaching the stack of layers obtained in step c), along said embrittlement zone, by applications constraints, so as to obtain two so-called rank 2 structures, the first comprising at least said support substrate and said rear working layer and the second comprising at least said stiffening substrate and said useful layer the front. According to an alternative embodiment of the invention, the cycle of the operations described in steps b) to d) is repeated, using as starting structure at least one of the structures of rank 2 and using stiffening substrates and it is repeated, where appropriate, this cycle of operations at least once, from at least one of the structures of the following row (s). Preferably, the transfer operation from step a) comprises a bonding step, the useful layer coming directly into contact with the support substrate, or one or more intermediate layers being inserted between the useful layer and the support substrate. Preferably also, the adhesion operation of step c) is carried out by bonding, the stiffening substrate coming directly into contact with the free surface of the useful front layer, or else at least one intermediate layer being inserted between the substrate. stiffener and the free surface of the useful front layer. Advantageously, the abovementioned bonding is carried out by molecular adhesion. According to other advantageous and non-limiting characteristics of the invention, taken alone or in combination: - the intermediate layer is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials with high permittivity, diamonds and constrained silicon; - The intermediate layer is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials with high permittivity, diamond; - At least one of the elements among the support substrate, the stiffening substrate and the useful layer is made of a semiconductor material; - The support substrate comprises at least one layer of a material chosen from silicon, silicon carbide, sapphire, diamond, germanium, quartz, stabilized zircane yttrium and an alloy of silicon carbide; the stiffening substrate comprises at least one layer of a material chosen from silicon, silicon carbide, sapphire, diamond, germanium, quartz, stabilized zirconia yttrium and an alloy of silicon carbide; the useful layer is made of a material chosen from silicon, silicon carbide, sapphire, diamond, germanium, silicon-germanium, III-V compounds and compounds
II-VI ; - selon une variante particulière, le substrat support est en silicium mono ou polycristallin, la couche utile en silicium monocristallin, le substrat raidisseur en silicium, mono o polycris± l lin, la couche intermédiaire et la couche intercalaire en oxyde de silicium ; - la couche utile de la structure de rang 1 est obtenue par formation d'une zone de fragilisation initiale à l'intérieur d'un substrat source, cette zone de fragilisation initiale séparant ladite couche utile du reste du substrat source, par application de ce substrat source sur ledit substrat support puis par détachement dudit reste le long de la zone de fragilisation initiale ; - la zone de fragilisation initiale est formée par implantation d'espèces atomiques ou est une zone poreuse. D'autres caractéristiques et avantages de l'invention apparaîtront à la lecture de la description suivante de plusieurs modes de réalisation de l'invention. Cette description est faite en référence aux dessins annexés dans lesquels : - les figures 1A à 1C sont des schémas illustrant les différentes étapes d'un procédé d'obtention d'une structure comprenant une couche utile reportée sur un substrat support ; les figures 2A à 2C sont des schémas illustrant une variante de réalisation du procédé représenté sur les figures 1A à IC selon laquelle on obtient une structure comprenant une couche utile reportée sur un substrat à l'aide d'une couche intermédiaire ; les figures 3A à 3F sont des schémas illustrant les différentes étapes d'un premier mode de réalisation du procédé d'obtention concomitante d'au moins une paire de structures selon l'invention ; les figures 4A à 4F sont des schémas illustrant une variante de réalisation du procédé représenté sur les figures 3A à 3F ; - et les figures 5A à 5F sont des schémas illustrant les différentes étapes d'un second mode de réalisation du procédé conforme à l'invention. Le procédé conforme à l'invention est réalisé à partir d'une première structure 5 ou 5', dite de rangII-VI; - According to a particular variant, the support substrate is made of monocrystalline or polycrystalline silicon, the useful layer of monocrystalline silicon, the stiffening substrate of silicon, mono or polycrystalline ± lin, the intermediate layer and the intermediate layer of silicon oxide; the useful layer of the rank 1 structure is obtained by forming an initial weakening zone inside a source substrate, this initial weakening zone separating said useful layer from the rest of the source substrate, by applying this source substrate on said support substrate then by detachment of said remainder along the initial embrittlement zone; - The initial embrittlement zone is formed by implantation of atomic species or is a porous zone. Other characteristics and advantages of the invention will appear on reading the following description of several embodiments of the invention. This description is made with reference to the accompanying drawings in which: - Figures 1A to 1C are diagrams illustrating the different stages of a process obtaining a structure comprising a useful layer transferred onto a support substrate; FIGS. 2A to 2C are diagrams illustrating an alternative embodiment of the method shown in FIGS. 1A to IC according to which a structure is obtained comprising a useful layer transferred onto a substrate using an intermediate layer; FIGS. 3A to 3F are diagrams illustrating the different stages of a first embodiment of the method for the concomitant production of at least one pair of structures according to the invention; Figures 4A to 4F are diagrams illustrating an alternative embodiment of the method shown in Figures 3A to 3F; - And Figures 5A to 5F are diagrams illustrating the different stages of a second embodiment of the method according to the invention. The process according to the invention is carried out using a first structure 5 or 5 ′, called a row
1, obtenue par exemple par l'un des procédés dont les étapes successives sont illustrées sur les figures 1A à1, obtained for example by one of the methods, the successive steps of which are illustrated in FIGS. 1A to
IC ou 2A à 2C. On peut voir sur la figure 1A, un substrat source 1 présentant intérieurement une zone de fragilisation 4 délimitant deux parties, à savoir une couche utile 11 et le reste 12 de ce substrat source ou partie arrière. Dans la suite de la description et des revendications, cette zone de fragilisation 4 est dénommée "zone de fragilisation initiale". Le substrat source 1 présente une face 13, dite "face avant", destinée à venir au contact d'un substrat support 2 qui sera décrit ultérieurement. De façon avantageuse, le substrat source 1 est choisi parmi les matériaux semi-conducteurs, notamment ceux couramment utilisés pour des applications dans les domaines de l'électronique, 1 ' opto-électronique ou l'optique. A titre d'exemple purement illustratif, il peut s'agir du silicium, du carbure de silicium, du saphir, du diamant, du germanium, du silicium-germanium, des composés III-V et des composés II-VI. Les composés III-V sont des composés dont l'un des éléments appartient à la colonne III de la classification périodique et l'autre à la colonne V, tels que par exemple, le nitrure de gallium (GaN) , l'arséniure de gallium (AsGa) ou le phosphure d'indium (InP) . Les composés II-VI sont des composés dont l'un des éléments appartient à la colonne II de la classification périodique et l'autre à la colonne VI, tel que par exemple, le tellurure de cadmium (CdTe) . Le substrat source 1 peut également être un substrat composite, c'est-à-dire un substrat composé d'une partie massive, par exemple en silicium, sur laquelle repose une couche tampon, par exemple en silicium-germanium (SiGe) . Selon une première variante de réalisation, la zone de fragilisation initiale 4 peut être obtenue par implantation d'espèces atomiques. Par implantation d'espèces atomiques, on entend tout bombardement d'espèces atomiques, moléculaires ou ioniques, susceptible d'introduire ces espèces dans un matériau, avec un maximum de concentration de ces espèces située à une profondeur déterminée par rapport à la surface bombardée 13. L'implantation des espèces atomiques dans ledit substrat source 1 peut être réalisée par exemple, grâce à un implanteur par faisceau d'ions ou par un implanteur par immersion dans un plasma. De préférence cette implantation est réalisée par bombardement ionique. De préférence encore, l'espèce ionique implantée est de l'.hydrogène . D'autres espèces ioniques peuvent avantageusement être utilisées seules ou en combinaison avec l'hydrogène, tels les gaz rares (l'hélium par exemple) . Cette implantation a pour effet de créer dans le volume du substrat source 1 et à une profondeur moyenne de pénétration des ions, la zone de fragilisation initiale 4 qui s'étend sensiblement parallèlement au plan de la face avant 13. La couche utile 11 s'étend entre la face avant 13 et cette zone de fragilisation 4. Pour la réalisation de cette étape, on pourra par exemple se référer à la littérature concernant le procédé connu sous la marque déposée "Smart Cut". La zone de fragilisation initiale 4 peut également être constituée par une couche poreuse obtenue par exemple comme décrit dans le document EP-0 849 788. Dans ce cas, la couche utile 11 est obtenue par épitaxie. Le substrat support 2 a un rôle de support mécanique et présente généralement de ce fait une épaisseur d'au moins environ 300 micromètres. Il est constitué de préférence de n'importe quel matériau semi-conducteur mono ou poly-cristallin utilisé couramment dans les applications précitées. Ce substrat support 2 peut être un substrat massif monocouche choisi par exemple parmi le silicium, le carbure de silicium, le saphir, le diamant, le germanium, le quartz, le zircane stabilisé yttrium (Zr02(Y03)) ou un alliage de carbure de silicium. Le substrat support 2 présente une face 20, dite "face avant" car destinée à recevoir la face avant 13 du substrat source 1. Ensuite, comme représenté sur la figure 1B, la face avant 13 de la couche utile 11 est collée directement sur le substrat support 2, c'est-à-dire sans couche intermédiaire. De façon avantageuse, ce collage est réalisé par adhésion moléculaire. Après une éventuelle étape de recuit thermique, on procède au détachement du reste 12 le long de la zone de fragilisation initiale 4 par application de contraintes (voir figure IC) . On utilise pour ce faire l'une des techniques suivantes parmi : l'application de contraintes d'origine mécanique, électrique, la gravure chimique ou l'apport d'énergie, par exemple l'utilisation d'un laser, de micro-ondes, d'un chauffage inductif, d'un traitement thermique dans un four. Ces techniques permettant le détachement sont connues de l'homme du métier et ne seront pas décrites plus en détail. Elles peuvent être utilisées seules ou en combinaison. On obtient ainsi la structure dite de rang 1, référencée 5, comprenant la couche utile 11 reportée sur un substrat support 2. Les figures 2A à 2C illustrent une variante de réalisation du procédé qui vient d'être décrit conjointement avec les figures 1A à IC mais qui diffère de celui-ci en ce qu'au moins une couche intermédiaire 3 est insérée entre la couche utile 11 et le substrat support 2. Toutefois, à des fins de simplification, sur les figures 2A à 2C et sur les figures 5A à 5F, une seule couche intermédiaire 3 a été représentée. De façon avantageuse, chacune de ces couches intermédiaires 3 est réalisée dans un matériau choisi parmi l'oxyde de silicium (Si02) , le nitrure de silicium (Si3N4) , les matériaux isolants à forte permittivité et le diamant. II est également possible d'avoir une couche intermédiaire de silicium contraint sur une couche utile de silicium-germanium relaxée (SiGe) . Dans le cas où l'on a plusieurs couches intermédiaires 3, celles-ci peuvent être de même nature ou de natures différentes. Cette couche intermédiaire 3 peut être obtenue par des techniques de dépôt chimique en phase vapeur ou toute autre technique connue de l'homme du métier, réalisées soit sur la face avant 20 du substrat support 2, soit sur la face avant 13 du substrat source 1, soit sur ces deux faces avant et ce, avant que ces deux substrats ne soient appliqués l'un contre l'autre. Lorsque cette couche intermédiaire 3 est une couche d'oxyde, elle peut également être obtenue par oxydation thermique de l'un ou l'autre des deux substrats 1 ou 2. Quelle que soit la façon dont la ou les couches intermédiaires 3 ont été obtenues, la surface libre de la couche intermédiaire supérieure est collée contre la surface libre du substrat 1 ou 2 en regard, de préférence par adhésion moléculaire. A l'issue de cette variante de réalisation du procédé, on obtient une première structure de rang 1 référencée 5', comprenant le substrat source 2, la couche utile 11 et la couche intermédiaire 3 insérée entre eux. Dans la suite de la description et des revendications, le terme "reportée" pour une structure de rang 1 signifie qu'une ccαiche. utile est reportée sur un substrat support par un procédé comprenant au moins une étape de collage, en présence ou non d'au moins une couche intermédiaire 3. Selon un autre mode de réalisation non représenté sur les figures, la couche utile 11 peut être reportée sur le substrat support 2 par la technique BESOI mentionnée précédemment, en présence ou en l'absence de la couche intermédiaire 3. Les figures 3A à 3C illustrent un cycle complet d'étapes d'un premier mode de réalisation du procédé conforme à l'invention permettant l'obtention concomitante d'une paire de structures comprenant chacune une couche utile reportée sur un substrat. Comme on peut le voir sur la figure 3A, on forme une zone de fragilisation 6 à l'intérieur de la couche utile 11 de la structure 5 de rang 1 obtenue précédemment, par implantation d'espèces atomiques selon la technique décrite précédemment pour l'obtention de la zone de fragilisation initiale 4. Ceci permet de définir deux couches, à savoir d'une part une couche utile avant 110 et d'autre part une couche utile arrière 120 située entre ladite couche utile avant 110 et le substrat support 2. L'étape suivante illustrée sur la figure 3B consiste à faire adhérer un substrat raidisseur 71 sur la surface libre 130 de ladite couche utile avant 110, par collage, de préférence par collage direct par adhésion moléculaire. Enfin, la dernière étape du cycle illustrée sur la figure 3C consiste à procéder au détachement de l'empilement de couches obtenu à l'étape précédente, le long de ladite .zone de..fragi 1 s-ati on 6, par application de contraintes, selon des techniques connues de l'homme du métier et décrites précédemment conjointement avec les figures IC et 2C. On obtient ainsi deux structures 51 et 52 dites de rang 2. La première structure 51 comprend le substrat support 2 et la couche utile arrière 120 et la seconde structure 52 comprend le substrat raidisseur 71 et la couche utile avant 110. On notera que la couche utile 11 doit présenter une épaisseur suffisante pour qu'après l'étape de détachement les deux couches utiles 110 et 120 obtenues ne présentent pas de défauts ni de cloques. Les épaisseurs des deux couches utiles 110 et 120 peuvent être identiques ou différentes en fonction de la profondeur d'implantation des espèces atomiques et donc de la localisation de la zone de fragilisation 6. Il est alors possible de répéter le cycle d'opérations qui vient d'être décrit, c'est-à-dire la formation d'une zone de fragilisation, l'adhésion d'un substrat raidisseur et le détachement le long de la zone de fragilisation formée, à au moins l'une des structures 51,52 de rang 2, voire aux deux, jusqu'à obtenir selon le cas une ou deux paires de structures de rang 3, référencées respectivement 511, 512, 521, 522 (voir la figure 3F) . Comme représenté sur la figure 3D, on peut voir que l'on soumet la face avant 140 de la couche utile 110 à une opération de formation d'une zone de fragilisation 6, par implantation d'espèces atomiques, de façon à définir une couche utile arrière 111 et une couche utile avant 112. On procède de .façon sirni 1 ai re pour la structure de rang 2 référencée 51 et l'on obtient une couche utile avant 122 et une couche utile arrière 121. On fait ensuite adhérer par collage par adhésion moléculaire un substrat raidisseur 72 sur la face avant 140 de la couche utile avant 112 et un substrat raidisseur 73 sur la face avant 150 de la couche utile avant 122. Comme représenté sur la figure 3F, on procède alors au détachement des deux empilements de couches obtenus, le long de la zone de fragilisation 6, pour obtenir quatre structures de rang 3. Les deux structures 521 et 522 de rang 3 issues de la structure 52 de rang 2 comprennent respectivement le raidisseur 71 et la couche utile arrière 111 pour la première et le raidisseur 72 et la couche utile avant 112 pour la seconde, tandis que les deux structures 511 et 512 de rang 3 issues de la structure 51 de rang 2 comprennent respectivement le raidisseur 73 et la couche utile avant 122 pour la première et le substrat support 2 et la couche utile arrière 121 pour la seconde. Il est alors possible si on le souhaite de réitérer le cycle des trois opérations qu vient d'être décrit en utilisant comme structure de départ au moins l'une des structures de rang 3 ou des rangs suivants obtenues ultérieurement et ce, jusqu'à ce que les couches utiles reportées sur un substrat atteignent une épaisseur au-delà de laquelle un cycle supplémentaire aboutirait au report d'une couche utile de mauvaise qualité, c'est à dire présentant des défauts ou des cloques. les figures _4A à 4F illustrent une variante de réalisation du procédé qui se distingue de celui décrit conjointement avec les figures 3A à 3F en ce qu'au moins une couche intercalaire 8, respectivement 8", sont insérées entre les substrats raidisseurs 71, respectivement 73 et la couche utile en regard. On notera que sur les figures, une seule couche intercalaire 8,8" a été représentée à des fins de simplification. Cette couche intercalaire 8 ou 8" peut être réalisée par exemple par dépôt chimique en phase vapeur ou par toute autre technique de dépôt de couches connue de l'homme du métier. Les couches intercalaires 8, respectivement 8", peuvent également être obtenues par oxydation du substrat raidisseur 71, respectivement 73. Ce dépôt peut être effectué soit sur le raidisseur avant son application sur la couche utile, soit sur cette dernière, de préférence avant l'étape d'implantation d'espèces atomiques visant à former la zone de fragilisation 6. La couche intercalaire 8 ou 8" est ensuite collée sur la couche en regard, de préférence par collage par adhésion moléculaire. A titre d'exemple, les couches intercalaires 8, 8" sont réalisées dans un matériau choisi parmi l'oxyde de silicium (Si02), le nitrure de silicium (Si3N) , les matériaux isolants à forte permittivité et le diamant. Dans le cas où l'on a plusieurs couches intercalaires 8,8", celles-ci peuvent être de même nature ou de natures différentes . On notera sur la figure 4E que le raidisseur 72 est collé directement sur la couche utile avant 112, c'est-à-dire sans couche intercalaire. On obtient ainsi quatre structures de rang 3 dont deux uniquement, référencées 521' et 511' comprennent un raidisseur, une couche utile et une couche intercalaire. Les figures 5A à 5F illustrent un second mode de réalisation du procédé de l'invention qui se distingue de celui décrit conjointement avec les figures 4A à 4F en ce que d'une part, on utilise comme structure de départ la structure de rang 1 référencée 5 ' comprenant une couche intermédiaire 3 insérée entre la couche utile 11 et le substrat support 2 et en ce que d'autre part, on utilise une couche intercalaire 8' entre le raidisseur 72 et la couche utile avant 112. Cette couche intercalaire 8 ' est de même nature et obtenue de la même façon que les couches intercalaires 8 ou 8" précédemment décrites. On obtient ainsi deux structures de rang 2 référencées 51' et 52' et quatre structures de rang 3, les trois premières référencées 521', 522' et 511' comprenant toutes un raidisseur, une couche intercalaire 8, 8' ou 8" et une couche utile, la quatrième 512' comprenant le substrat support 2, la couche intermédiaire 3 et la couche utile 121. Dans la suite de la description et des revendications, l'expression "faire adhérer un substrat raidisseur sur une couche utile" englobe le cas où il existe un contact intime entre le raidisseur et la couche utile et le cas où au moins une couche intercalaire 8, 8' ou 8" est présente entre eux.. Dans les différents procédés qui viennent d'être décrits, on entend par l'expression "substrat raidisseur", tout type de substrat ayant un rôle de support mécanique et permettant de prélever la couche utile depuis le substrat dont elle est issue. Le choix de la nature du raidisseur 71, 72, 73 est fonction de l'application finale visée pour la structure obtenue. Les substrats raidisseurs 71, 72 et 73 peuvent être choisis parmi les exemples donnés pour le substrat support 2. Les différents procédés qui viennent d'être décrits et leurs variantes permettent d'obtenir au moins une paire de structures à l'issue de chaque cycle du procédé pour un seul substrat source 1 à recycler, de sorte qu'ils sont plus économiques et plus rentables que les procédés connus de 1 ' état de la technique qui nécessitaient le recyclage du substrat source pour chaque structure formée . De plus, à chaque réitération du cycle d'étapes, l'opérateur peut choisir d'appliquer des raidisseurs de même nature ou de natures différentes et comportant ou non une couche intercalaire 8, 8', 8". Il en résulte la possibilité d'obtenir de façon concomitante des structures comportant des empilements de couches différentes. Enfin, en fonction des paramètres d'implantation des espèces atomiques, il est également possible de former la zone de fragilisation 6 de façon que les couches utiles arrières 120, 111 ou 121 soient très minces, par exemple d'une épaisseur inférieure à 50 nm, tandis que les couches ui-il-as. avant voisines, référencées respectivement 110, 112 ou 122, sont beaucoup plus épaisses. L'épaisseur de la couche utile avant associée à celle du raidisseur qui est appliqué contre permet d'effectuer le traitement thermique de recuit ultérieur sans déformation ni apparition de cloques au niveau de la couche utile arrière. On obtient ainsi une couche utile arrière reportée beaucoup plus mince que ce que l'on pouvait obtenir jusqu'à présent avec des procédés d'implantation tel que le procédé Smart Cut. En outre, les étapes d'implantation d'espèces atomiques effectuées sur des substrats de rang 1 ou supérieur concentrent les défauts dans les couches utiles avant 110 ou 122, tandis que les couches utiles arrières 120 ou 121 qui n'auront pas subi directement l'implantation présenteront une zone avec des défauts liés à l'implantation et au détachement s 'étendant sur une épaisseur moins importante au niveau de la zone de détachement que celle de la couche avant. On va maintenant décrire un exemple de réalisation du procédé conforme à l'invention, en faisant référence aux figures 5A à 5F. Exemple 1 : On utilise comme structure de rang 1, une structure 5 ' de type substrat SOI comprenant un substrat support 2 en silicium monocristallin, une couche intermédiaire 3 en oxyde de silicium Si02 d'une épaisseur de 20 nm et une couche utile 11 en silicium monocristal 1 i n d'une épai&s-eur de 1.5 μm. On procède ensuite à la formation de la zone de fragilisation 6 par implantation d'ions hydrogène selon une énergie d'implantation de l'ordre de 150 keV et une dose d'implantation de l'ordre de 6.1016H+/cm2. On forme ainsi une couche utile arrière 120 d'une épaisseur de 20 nm. On applique alors un raidisseur 71 en silicium monocristallin recouvert d'une couche intercalaire 8 d'oxyde de silicium Si02 d'une épaisseur de 20 nm etIC or 2A to 2C. We can see in Figure 1A, a source substrate 1 internally having a weakening zone 4 delimiting two parts, namely a useful layer 11 and the rest 12 of this source substrate or rear part. In the following description and claims, this weakening zone 4 is called "initial weakening zone". The source substrate 1 has a face 13, called "front face", intended to come into contact with a support substrate 2 which will be described later. Advantageously, the source substrate 1 is chosen from semiconductor materials, in particular those commonly used for applications in the fields of electronics, optoelectronics or optics. As a purely illustrative example, it may be silicon, silicon carbide, sapphire, diamond, germanium, silicon-germanium, compounds III-V and compounds II-VI. Compounds III-V are compounds of which one of the elements belongs to column III of the periodic table and the other to column V, such as for example, gallium nitride (GaN), gallium arsenide (AsGa) or indium phosphide (InP). Compounds II-VI are compounds of which one of the elements belongs to column II of the periodic table and the other to column VI, such as for example, cadmium telluride (CdTe). The source substrate 1 can also be a composite substrate, that is to say a substrate composed of a solid part, for example made of silicon, on which rests a buffer layer, for example made of silicon-germanium (SiGe). According to a first alternative embodiment, the initial embrittlement zone 4 can be obtained by implantation of atomic species. By implantation of atomic species, we mean any bombardment of atomic species, molecular or ionic, capable of introducing these species into a material, with a maximum concentration of these species located at a determined depth relative to the bombarded surface 13. The implantation of the atomic species in said source substrate 1 can be carried out by for example, using an ion beam implanter or a plasma immersion implanter. Preferably, this implantation is carried out by ion bombardment. More preferably, the implanted ionic species is hydrogen. Other ionic species can advantageously be used alone or in combination with hydrogen, such as rare gases (helium for example). The effect of this implantation is to create in the volume of the source substrate 1 and at an average depth of ion penetration, the initial weakening zone 4 which extends substantially parallel to the plane of the front face 13. The useful layer 11 s' extends between the front face 13 and this weakening zone 4. For the performance of this step, one can for example refer to the literature concerning the process known under the trademark "Smart Cut". The initial embrittlement zone 4 can also consist of a porous layer obtained for example as described in document EP-0 849 788. In this case, the useful layer 11 is obtained by epitaxy. The support substrate 2 has a role of mechanical support and therefore generally has a thickness of at least about 300 micrometers. It preferably consists of any mono or polycrystalline semiconductor material commonly used in the aforementioned applications. This support substrate 2 can be a solid monolayer substrate chosen for example from silicon, silicon carbide, sapphire, diamond, germanium, quartz, stabilized zircane yttrium (Zr0 2 (Y0 3 )) or an alloy of silicon carbide. The support substrate 2 has a face 20, called "front face" because it is intended to receive the front face 13 of the source substrate 1. Then, as shown in FIG. 1B, the front face 13 of the useful layer 11 is bonded directly to the support substrate 2, that is to say without an intermediate layer. Advantageously, this bonding is carried out by molecular adhesion. After a possible thermal annealing step, the remainder 12 is detached along the initial embrittlement zone 4 by application of stresses (see FIG. IC). One of the following techniques is used for this purpose: application of constraints of mechanical or electrical origin, chemical etching or supply of energy, for example the use of a laser, of microwaves , inductive heating, heat treatment in an oven. These techniques for detachment are known to those skilled in the art and will not be described in more detail. They can be used alone or in combination. The so-called row 1 structure, referenced 5, is thus obtained, comprising the useful layer 11 transferred onto a support substrate 2. FIGS. 2A to 2C illustrate an alternative embodiment of the method which has just been described in conjunction with FIGS. 1A to IC but which differs from this in that at least one intermediate layer 3 is inserted between the useful layer 11 and the support substrate 2. However, for the sake of simplification, in FIGS. 2A to 2C and in FIGS. 5A to 5F, a single intermediate layer 3 has been shown. Advantageously, each of these intermediate layers 3 is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials with high permittivity and diamond. It is also possible to have an intermediate layer of strained silicon on a useful layer of relaxed silicon-germanium (SiGe). In the case where there are several intermediate layers 3, these can be of the same nature or of different natures. This intermediate layer 3 can be obtained by chemical vapor deposition techniques or any other technique known to those skilled in the art, carried out either on the front face 20 of the support substrate 2, or on the front face 13 of the source substrate 1 , either on these two front faces and this, before these two substrates are applied one against the other. When this intermediate layer 3 is an oxide layer, it can also be obtained by thermal oxidation of one or the other of the two substrates 1 or 2. Regardless of how the intermediate layer or layers 3 were obtained , the surface free of the upper intermediate layer is bonded against the free surface of the substrate 1 or 2 opposite, preferably by molecular adhesion. At the end of this variant embodiment of the method, a first structure of rank 1, referenced 5 ′, is obtained, comprising the source substrate 2, the useful layer 11 and the intermediate layer 3 inserted between them. In the following description and claims, the term "postponed" for a rank 1 structure means that a ccαiche. useful layer is transferred onto a support substrate by a process comprising at least one bonding step, in the presence or absence of at least one intermediate layer 3. According to another embodiment not shown in the figures, the useful layer 11 can be transferred on the support substrate 2 by the BESOI technique mentioned above, in the presence or absence of the intermediate layer 3. FIGS. 3A to 3C illustrate a complete cycle of steps of a first embodiment of the method in accordance with invention allowing the concomitant production of a pair of structures each comprising a useful layer transferred onto a substrate. As can be seen in FIG. 3A, a weakening zone 6 is formed inside the useful layer 11 of the structure 5 of rank 1 obtained previously, by implantation of atomic species according to the technique described above for the obtaining the initial embrittlement zone 4. This makes it possible to define two layers, namely on the one hand a useful layer before 110 and on the other hand a rear useful layer 120 situated between said front useful layer 110 and the support substrate 2. The next step illustrated in FIG. 3B consists in making a stiffening substrate 71 adhere to the free surface 130 of said front useful layer 110, by bonding, preferably by direct bonding by molecular adhesion. Finally, the last step of the cycle illustrated in FIG. 3C consists in detaching the stack of layers obtained in the previous step, along the said .fragi area 1 s-ati on 6, by applying constraints, according to techniques known to a person skilled in the art and described previously together with FIGS. IC and 2C. Two structures 51 and 52 are thus obtained, called row 2 structures. The first structure 51 comprises the support substrate 2 and the rear useful layer 120 and the second structure 52 comprises the stiffening substrate 71 and the front useful layer 110. It will be noted that the layer useful 11 must have a sufficient thickness so that after the detachment step the two useful layers 110 and 120 obtained do not exhibit any defects or blisters. The thicknesses of the two useful layers 110 and 120 can be identical or different depending on the implantation depth of the atomic species and therefore on the location of the embrittlement zone 6. It is then possible to repeat the operating cycle which comes to be described, that is to say the formation of a weakening zone, the adhesion of a stiffening substrate and the detachment along the weakening zone formed, to at least one of the structures 51.52 of rank 2, or even both, until obtaining, as the case may be, one or two pairs of structures of rank 3, referenced respectively 511, 512, 521, 522 (see FIG. 3F). As shown in FIG. 3D, it can be seen that the front face 140 of the useful layer 110 is subjected to an operation of forming a weakening zone 6, by implantation of atomic species, so as to define a layer useful rear 111 and a useful front layer 112. We proceed in a sirni 1 way for the row 2 structure referenced 51 and we obtain a useful front layer 122 and a useful rear layer 121. We then adhere by gluing by molecular adhesion a stiffening substrate 72 on the front face 140 of the front useful layer 112 and a stiffening substrate 73 on the front face 150 of the front useful layer 122. As shown in FIG. 3F, the two stacks are then detached. of layers obtained, along the embrittlement zone 6, to obtain four structures of rank 3. The two structures 521 and 522 of rank 3 resulting from the structure 52 of rank 2 respectively comprise the stiffener 71 and the layer u rear tile 111 for the first and the stiffener 72 and the front useful layer 112 for the second, while the two structures 511 and 512 of rank 3 resulting from the structure 51 of rank 2 respectively comprise the stiffener 73 and the useful front layer 122 for the first and the support substrate 2 and the rear useful layer 121 for the second. It is then possible, if desired, to repeat the cycle of the three operations which has just been described, using as starting structure at least one of the structures of rank 3 or of the following ranks obtained subsequently, until that the useful layers transferred onto a substrate reach a thickness beyond which an additional cycle would lead to the transfer of a useful layer of poor quality, that is to say having defects or blisters. Figures _4A to 4F illustrate an alternative embodiment of the method which differs from that described jointly with Figures 3A to 3F in that at least one intermediate layer 8, respectively 8 ", are inserted between the stiffening substrates 71, respectively 73 and the useful layer opposite. It will be noted that in the figures, a single 8.8 "intermediate layer has been shown for simplification purposes. This intermediate layer 8 or 8 "can be produced for example by chemical vapor deposition or by any other layer deposition technique known to those skilled in the art. The intermediate layers 8, respectively 8", can also be obtained by oxidation of the stiffener substrate 71, respectively 73. This deposition can be carried out either on the stiffener before its application on the useful layer, or on the latter, preferably before the step of implantation of atomic species aimed at forming the embrittlement zone 6. The intermediate layer 8 or 8 "is then bonded to the facing layer, preferably by bonding by molecular adhesion. By way of example, the intermediate layers 8, 8" are made of a material chosen from silicon oxide ( Si0 2 ), silicon nitride (Si 3 N), insulating materials with high permittivity and diamond. In the case where there are several 8.8 "intermediate layers, these may be of the same nature or of different natures. It will be noted in FIG. 4E that the stiffener 72 is bonded directly to the useful layer before 112, c "that is to say without an intermediate layer. This gives four rank 3 structures, only two of which, referenced 521 'and 511' comprise a stiffener, a useful layer and an intermediate layer. FIGS. 5A to 5F illustrate a second mode of construction. embodiment of the method of the invention which differs from that described jointly with FIGS. 4A to 4F in that, on the one hand, the structure of rank 1 referenced 5 ′ comprising as an initial structure comprising an intermediate layer 3 inserted between the useful layer 11 and the support substrate 2 and in that, on the other hand, an intermediate layer 8 'is used between the stiffener 72 and the useful front layer 112. This intermediate layer 8' is of the same nature and obtained in the same way n only the intermediate layers 8 or 8 "previously described. We thus obtain two rank 2 structures referenced 51 'and 52' and four rank 3 structures, the first three referenced 521 ', 522' and 511 'all comprising a stiffener, an intermediate layer 8, 8' or 8 "and a useful layer, the fourth 512 'comprising the support substrate 2, the intermediate layer 3 and the useful layer 121. In the remainder of the description and of the claims, the expression "causing a stiffening substrate to adhere to a useful layer" includes the case where there is intimate contact between the stiffener and the useful layer and the case where at least one layer interlayer 8, 8 'or 8 "is present between them. In the various processes which have just been described, the expression" stiffening substrate "is understood to mean any type of substrate having a role of mechanical support and making it possible to take off the useful layer from the substrate from which it comes. The choice of the nature of the stiffener 71, 72, 73 depends on the final application targeted for the structure obtained. The stiffening substrates 71, 72 and 73 can be chosen from the examples given for the support substrate 2. The various methods which have just been described and their variants make it possible to obtain at least one pair of structures at the end of each cycle. of the method for a single source substrate 1 to be recycled, so that they are more economical and more profitable than the known methods of the prior art which required the recycling of the source substrate for each structure formed. In addition, each time the step cycle is repeated, the operator can choose to apply stiffeners of the same type or of different types and with or without an intermediate layer 8, 8 ', 8 ". This results in the possibility of concomitantly obtaining structures comprising stacks of different layers. Finally, depending on the parameters d implantation of atomic species, it is also possible to form the embrittlement zone 6 so that the rear useful layers 120, 111 or 121 are very thin, for example of a thickness less than 50 nm, while the ui- il-as. before neighbors, respectively referenced 110, 112 or 122, are much thicker. The thickness of the useful front layer associated with that of the stiffener which is applied against allows the subsequent annealing heat treatment to be carried out without deformation or appearance of blisters at the rear useful layer. This gives a postponed rear useful layer much thinner than what could be obtained until now. t with implantation processes such as the Smart Cut process. In addition, the stages of implantation of atomic species carried out on substrates of rank 1 or higher concentrate the defects in the useful layers before 110 or 122, while the rear useful layers 120 or 121 which will not have directly undergone the 'implantation will present an area with defects related to implantation and detachment extending over a thickness less significant at the detachment zone than that of the front layer. We will now describe an exemplary embodiment of the method according to the invention, with reference to Figures 5A to 5F. Example 1: A 5 ′ structure of SOI substrate type comprising a support substrate 2 made of monocrystalline silicon, an intermediate layer 3 made of silicon oxide Si0 2 with a thickness of 20 nm and a useful layer 11 is used as the rank 1 structure. made of 1 in single crystal silicon with a thickness and thickness of 1.5 μm. Next, the embrittlement zone 6 is formed by implantation of hydrogen ions according to an implantation energy of the order of 150 keV and an implantation dose of the order of 6.10 16 H + / cm 2 . A rear useful layer 120 with a thickness of 20 nm is thus formed. A stiffener 71 is then applied in monocrystalline silicon covered with an intermediate layer 8 of silicon oxide Si0 2 with a thickness of 20 nm and
1 ' on procède au détachement le long de la zone de fragilisation 6. On obtient ainsi de façon simultanée une paire de substrats SOI 51' et 52'. On réitère ensuite le cycle des opérations en utilisant comme structure de départ, le substrat SOI de rang 2 référencé 52 ' . Après préparation des surfaces, la couche utile avant 112 présente une épaisseur de l'ordre de 0,6 micron et la couche utile arrière 111 une épaisseur de l'ordre de 0,6 micron. On utilise un raidisseur 72 en silicium monocristallin recouvert d'une couche d'oxyde de silicium 8' d'une épaisseur de 20 nm (20 nanometres) et l'on obtient deux substrats SOI de rang 3, référencés1 'is carried out detachment along the embrittlement zone 6. A pair of SOI substrates 51' and 52 'is thus obtained simultaneously. The cycle of operations is then reiterated using as a starting structure, the SOI rank 2 substrate referenced 52 ′. After preparation of the surfaces, the useful front layer 112 has a thickness of the order of 0.6 microns and the rear useful layer 111 a thickness of the order of 0.6 microns. A stiffener 72 is used in monocrystalline silicon covered with an oxide layer 8 'silicon with a thickness of 20 nm (20 nanometers) and two rank 3 SOI substrates are obtained, referenced
521' et 522' dont les couches utiles respectives 111 et521 'and 522' including the respective useful layers 111 and
112, après détachement, présentent des épaisseurs de l'ordre de 0,6 micron. 112, after detachment, have thicknesses of the order of 0.6 microns.

Claims

REVENDICATIONS
1. Procédé d'obtention concomitante d'au moins une paire de structures (51, 51 ' , 52, 52 ' ) comprenant chacune au moins une couche utile (110,120) reportée sur un substrat (71,2) pour des applications dans les. domaines de l'électronique, l'optoélectronique ou l'optique, comprenant les étapes consistant à : a) préparer une structure (5,5'), dite de rang 1, comprenant une couche utile (11) reportée sur un substrat support (2), b) former une zone de fragilisation (6) à l'intérieur de ladite couche utile (11) de la structure de rang 1, par implantation d'espèces atomiques, de façon à y définir deux couches (110,120), dites "couche utile avant" et "couche utile arrière", la couche utile arrière (120) étant située entre ladite couche utile avant (110) et ledit substrat support (2), c) faire adhérer un substrat raidisseur (71) sur la surface libre (130) de ladite couche utile avant (110) , d) procéder au détachement de l'empilement de couches obtenu à l'étape c) , le long de ladite zone de fragilisation (6), par applications de contraintes, de façon à obtenir deux structures dites de rang 2 (51, 51 ' , 52, 52 ' ) , la première (51,51') comprenant au moins ledit substrat support (2) et ladite couche utile arrière (120) et la seconde (52,52') comprenant au moins ledit substrat raidisseur (71) et ladite couche utile avant (110) . 1. Method for the concomitant production of at least one pair of structures (51, 51 ', 52, 52') each comprising at least one useful layer (110,120) transferred onto a substrate (71,2) for applications in . fields of electronics, optoelectronics or optics, comprising the steps of: a) preparing a structure (5.5 ′), called of rank 1, comprising a useful layer (11) transferred onto a support substrate ( 2), b) forming a weakening zone (6) inside said useful layer (11) of the rank 1 structure, by implantation of atomic species, so as to define there two layers (110,120), called "front useful layer" and "rear useful layer", the rear useful layer (120) being located between said front useful layer (110) and said support substrate (2), c) adhering a stiffening substrate (71) on the surface free (130) of said useful front layer (110), d) detaching the stack of layers obtained in step c), along said embrittlement zone (6), by applying stresses, so to obtain two so-called rank 2 structures (51, 51 ', 52, 52'), the first (51.51 ') comprising at least said additional substrate ort (2) and said rear useful layer (120) and the second (52,52 ') comprising at least said stiffening substrate (71) and said front useful layer (110).
2. Procédé selon la revendication 1 d'obtention concomitante de plusieurs paires de structures (511, 511', 512, 512', 521, 521', 522, 522') comprenant chacune au moins une couche utile (111, 112, 121, 122) reportée sur un substrat (2, 71, 72, 73), caractérisé en ce que l'on répète le cycle des opérations décrites aux étapes b) à d) en utilisant comme structure de départ au moins l'une des structures de rang 2 (51, 51', '52, 52') et en utilisant des substrats raidisseurs (72, 73) et en ce qu'on réitère, le cas échéant, ce cycle, d'opérations., .au. moins, une fois, à partir d'au moins l'une des structures de rang (s) suivant(s) (511, 511', 512, 512', 521, 521', 522, 522'). 2. Method according to claim 1 for concomitantly obtaining several pairs of structures (511, 511 ', 512, 512', 521, 521 ', 522, 522') each comprising at least one useful layer (111, 112, 121 , 122) transferred to a substrate (2, 71, 72, 73), characterized in that the cycle of the operations described in steps b) to d) is repeated using as starting structure at least one of the structures of rank 2 (51, 51 ', ' 52, 52 ') and using stiffening substrates (72, 73) and in that this cycle of operations is repeated, if necessary. less, once, from at least one of the following row structures (511, 511 ', 512, 512', 521, 521 ', 522, 522').
3. Procédé selon la revendication 1 ou 2, caractérisé en ce que l'opération de report de l'étape a) comprend une étape de collage, la couche utile (11) venant directement au contact du substrat support (2) . 3. Method according to claim 1 or 2, characterized in that the transfer operation of step a) comprises a bonding step, the useful layer (11) coming directly into contact with the support substrate (2).
4. Procédé selon la revendication 1 ou 2, caractérisé en ce que l'opération de report de l'étape a) comprend une étape de collage, une ou plusieurs couches intermédiaires (3) étant inséréees entre la couche utile (11) et le substrat support (2). 4. Method according to claim 1 or 2, characterized in that the transfer operation of step a) comprises a bonding step, one or more intermediate layers (3) being inserted between the useful layer (11) and the support substrate (2).
5. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que l'opération d'adhésion de l'étape c) se fait par collage, le substrat raidisseur (71, 72, 73) venant directement au contact de la surface libre (130, 140, 150) de la couche utile avant (110, 112, 122). 5. Method according to any one of the preceding claims, characterized in that the adhesion operation of step c) is carried out by bonding, the stiffening substrate (71, 72, 73) coming directly into contact with the surface free (130, 140, 150) of the front useful layer (110, 112, 122).
6. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que l'opération d'adhésion de l'étape c) se fait par collage, au moins une couche intercalaire (8, 8', 8") étant insérée entre le substrat raidisseur (71, 72, 73) et la surface libre (130,140,150) de la couche utile avant (110, 112, 122) . 6. Method according to any one of the preceding claims, characterized in that the adhesion operation of step c) is carried out by gluing, at least one intermediate layer (8, 8 ', 8 ") being inserted between the stiffening substrate (71, 72, 73) and the free surface (130,140,150) of the front useful layer (110, 112, 122).
7. Procédé selon l'une des revendications 3 à 6, caractérisé en ce que le collage est effectué par adhésion moléculaire. 7. Method according to one of claims 3 to 6, characterized in that the bonding is carried out by molecular adhesion.
8. Procédé selon la revendication 4, caractérisé en ce que ladite couche intermédiaire (3) est réalisée dans un matériau choisi parmi l'oxyde de silicium (Si02) , le nitrure de silicium (Si3N4), les matériaux isolants à forte permi ti vi té, le diamant et le silicium contraint. 8. Method according to claim 4, characterized in that said intermediate layer (3) is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials to high permi ti vi ty, diamond and constrained silicon.
9. Procédé selon la revendication 6, caractérisé en ce que ladite couche intercalaire (8, 8', 8") est réalisée dans un matériau choisi parmi l'oxyde de silicium (Si02), le nitrure de silicium (Si3N4) , les matériaux isolants à forte permittivité, le diamant. 9. Method according to claim 6, characterized in that said intermediate layer (8, 8 ', 8 ") is made of a material chosen from silicon oxide (Si0 2 ), silicon nitride (Si 3 N 4 ), insulating materials with high permittivity, diamond.
10. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce qu'au moins l'un des éléments parmi le substrat support (2), le substrat raidisseur (71, 72, 73) et la couche utile (11, 110, 120, 111, 112, 121, 122) est réalisé dans un matériau semi-conducteur. 10. Method according to any one of the preceding claims, characterized in that at least one of the elements among the support substrate (2), the stiffening substrate (71, 72, 73) and the useful layer (11, 110 , 120, 111, 112, 121, 122) is made of a semiconductor material.
11. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que le substrat support (2) comprend au moins une couche d'un matériau choisi parmi le silicium, le carbure de silicium, le saphir, le diamant, le germanium, le quartz, le zircane stabilisé yttrium et un alliage de carbure de silicium. 11. Method according to any one of the preceding claims, characterized in that the support substrate (2) comprises at least one layer of a material chosen from silicon, silicon carbide, sapphire, diamond, germanium, quartz, yttrium stabilized zirconia and a silicon carbide alloy.
12. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que le substrat raidisseur (71, 72, 73) comprend au moins une couche d'un matériau choisi parmi le silicium, le carbure de silicium, le saphir, le diamant, le germanium, le quartz, le zircane stabilisé yttrium et un alliage de carbure de silicium. 12. Method according to any one of the preceding claims, characterized in that the stiffening substrate (71, 72, 73) comprises at least one layer of a material chosen from silicon, silicon carbide, sapphire, diamond, germanium, quartz, stabilized zirconia yttrium and a carbide alloy of silicon.
13. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que la couche utile (11, 110, 120, 111, 112, 121, 122) est réalisée dans un matériau choisi parmi le silicium, le carbure de silicium, le saphir, le diamant, le germanium, le silicium-germanium, les compo.sâs TTT-V et les composés II-VI. 13. Method according to any one of the preceding claims, characterized in that the useful layer (11, 110, 120, 111, 112, 121, 122) is made of a material chosen from silicon, silicon carbide, sapphire, diamond, germanium, silicon-germanium, compo.sâs TTT-V and compounds II-VI.
14. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que le substrat support (2) est en silicium mono ou polycristallin, la couche utile (11, 110, 120, 111, 112, 121, 122) en silicium monocristallin, le substrat raidisseur (71, 72, 73) en silicium mono ou polycristallin, la couche intermédiaire (3) et la couche intercalaire (8, 8', 8") en oxyde de silicium. 14. Method according to any one of the preceding claims, characterized in that the support substrate (2) is in monocrystalline or polycrystalline silicon, the useful layer (11, 110, 120, 111, 112, 121, 122) in monocrystalline silicon , the stiffening substrate (71, 72, 73) in mono or polycrystalline silicon, the intermediate layer (3) and the intermediate layer (8, 8 ', 8 ") in silicon oxide.
15. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que la couche utile (11) de la structure de rang 1 est obtenue par formation d'une zone de fragilisation initiale (4) à l'intérieur d'un substrat source (1), cette zone de fragilisation initiale (4) séparant ladite couche utile (11) du reste (12) du substrat source (1) , par application de ce substrat source (1) sur ledit substrat support (2), puis par détachement dudit reste (12) le long de la zone de fragilisation initiale (4) . 15. Method according to any one of the preceding claims, characterized in that the useful layer (11) of the rank 1 structure is obtained by forming an initial weakening zone (4) inside a substrate source (1), this initial weakening zone (4) separating said useful layer (11) from the rest (12) of the source substrate (1), by applying this source substrate (1) to said support substrate (2), then by detachment of said remainder (12) along the initial embrittlement zone (4).
16. Procédé selon la revendication 15, caractérisé en ce que la zone de fragilisation initiale (4) est formée par implantation d'espèces atomiques. 16. Method according to claim 15, characterized in that the initial weakening zone (4) is formed by implantation of atomic species.
17. Procédé selon la revendication 15, caractérisé en ce que la zone de fragilisation initiale17. Method according to claim 15, characterized in that the initial weakening zone
(4) est une zone poreuse. (4) is a porous area.
EP04767237A 2003-06-06 2004-06-03 Method for simultaneously obtaining a pair of substrates covered by a useful layer Withdrawn EP1631983A1 (en)

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FR0306845A FR2855909B1 (en) 2003-06-06 2003-06-06 PROCESS FOR THE CONCURRENT PRODUCTION OF AT LEAST ONE PAIR OF STRUCTURES COMPRISING AT LEAST ONE USEFUL LAYER REPORTED ON A SUBSTRATE
PCT/FR2004/001368 WO2005004232A1 (en) 2003-06-06 2004-06-03 Method for simultaneously obtaining a pair of substrates covered by a useful layer

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EP (1) EP1631983A1 (en)
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KR100751150B1 (en) 2007-08-22
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US20040248378A1 (en) 2004-12-09
US7115481B2 (en) 2006-10-03
CN1781188A (en) 2006-05-31
US7407867B2 (en) 2008-08-05
KR20060017615A (en) 2006-02-24
WO2005004232A1 (en) 2005-01-13
JP4625913B2 (en) 2011-02-02
FR2855909B1 (en) 2005-08-26
FR2855909A1 (en) 2004-12-10

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