EP1610369A4 - Procede de formation de film a plasma et appareil de formation de film a plasma - Google Patents

Procede de formation de film a plasma et appareil de formation de film a plasma

Info

Publication number
EP1610369A4
EP1610369A4 EP04722947A EP04722947A EP1610369A4 EP 1610369 A4 EP1610369 A4 EP 1610369A4 EP 04722947 A EP04722947 A EP 04722947A EP 04722947 A EP04722947 A EP 04722947A EP 1610369 A4 EP1610369 A4 EP 1610369A4
Authority
EP
European Patent Office
Prior art keywords
plasma film
forming apparatus
forming
forming method
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04722947A
Other languages
German (de)
English (en)
Other versions
EP1610369A1 (fr
Inventor
Yasuo Kobayashi
Kohei Kawamura
Akira Asano
Yasuhiro Terai
Kenichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of EP1610369A1 publication Critical patent/EP1610369A1/fr
Publication of EP1610369A4 publication Critical patent/EP1610369A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
EP04722947A 2003-03-25 2004-03-24 Procede de formation de film a plasma et appareil de formation de film a plasma Withdrawn EP1610369A4 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003083292 2003-03-25
JP2003083292 2003-03-25
JP2004076958A JP4369264B2 (ja) 2003-03-25 2004-03-17 プラズマ成膜方法
JP2004076958 2004-03-17
PCT/JP2004/004070 WO2004086483A1 (fr) 2003-03-25 2004-03-24 Procede de formation de film a plasma et appareil de formation de film a plasma

Publications (2)

Publication Number Publication Date
EP1610369A1 EP1610369A1 (fr) 2005-12-28
EP1610369A4 true EP1610369A4 (fr) 2007-03-07

Family

ID=33100373

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04722947A Withdrawn EP1610369A4 (fr) 2003-03-25 2004-03-24 Procede de formation de film a plasma et appareil de formation de film a plasma

Country Status (6)

Country Link
US (1) US20060251828A1 (fr)
EP (1) EP1610369A4 (fr)
JP (1) JP4369264B2 (fr)
KR (1) KR100767492B1 (fr)
TW (1) TW200423213A (fr)
WO (1) WO2004086483A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW477009B (en) * 1999-05-26 2002-02-21 Tadahiro Ohmi Plasma process device
JP2006135303A (ja) * 2004-10-05 2006-05-25 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置、並びにプラズマ成膜装置に用いられる記憶媒体
JP4664119B2 (ja) * 2005-05-17 2011-04-06 東京エレクトロン株式会社 プラズマ処理装置
JP5162108B2 (ja) 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
WO2007108394A1 (fr) * 2006-03-17 2007-09-27 National Institute Of Advanced Industrial Science And Technology Corps stratifié et procédé de dépôt de film de carbone associé
US8006640B2 (en) * 2006-03-27 2011-08-30 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5082411B2 (ja) * 2006-12-01 2012-11-28 東京エレクトロン株式会社 成膜方法
KR100898128B1 (ko) * 2007-07-30 2009-05-18 한국생산기술연구원 잉크젯 프린팅과 플라즈마 표면처리법을 이용한 미세패턴제작방법
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
WO2010129901A2 (fr) 2009-05-08 2010-11-11 Vandermeulen Peter F Procédés et systèmes pour dépôt et traitement par plasma
WO2012002232A1 (fr) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 Appareil de traitement plasma et procédé de traitement plasma
US9530621B2 (en) * 2014-05-28 2016-12-27 Tokyo Electron Limited Integrated induction coil and microwave antenna as an all-planar source
CN108495949B (zh) * 2015-12-02 2020-08-18 巴斯夫欧洲公司 产生薄无机膜的方法
JP6664047B2 (ja) * 2016-03-31 2020-03-13 株式会社昭和真空 成膜装置及び成膜方法
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
US10546724B2 (en) * 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
CN111033689B (zh) 2017-06-27 2023-07-28 彼得·F·范德莫伊伦 用于等离子体沉积和处理的方法及系统
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
EP1035569A1 (fr) * 1997-11-27 2000-09-13 Tokyo Electron Limited Procede de formation de films de plasma
US6357385B1 (en) * 1997-01-29 2002-03-19 Tadahiro Ohmi Plasma device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
US5800621A (en) * 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
TW376547B (en) * 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
JP3515347B2 (ja) * 1997-11-27 2004-04-05 東京エレクトロン株式会社 半導体デバイスの製造方法及び半導体デバイス
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
JP4361625B2 (ja) * 1998-10-05 2009-11-11 東京エレクトロン株式会社 半導体装置及びその製造方法
US6870123B2 (en) * 1998-10-29 2005-03-22 Canon Kabushiki Kaisha Microwave applicator, plasma processing apparatus having same, and plasma processing method
JP2001308071A (ja) * 2000-04-26 2001-11-02 Canon Inc Ｅ面分岐を有する導波管を用いたプラズマ処理装置及びプラズマ処理方法
US6652709B1 (en) * 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP4478352B2 (ja) * 2000-03-29 2010-06-09 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法
JP2002220668A (ja) * 2000-11-08 2002-08-09 Daikin Ind Ltd 成膜ガスおよびプラズマ成膜方法
JP5010781B2 (ja) * 2001-03-28 2012-08-29 忠弘 大見 プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
US6357385B1 (en) * 1997-01-29 2002-03-19 Tadahiro Ohmi Plasma device
EP1035569A1 (fr) * 1997-11-27 2000-09-13 Tokyo Electron Limited Procede de formation de films de plasma

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004086483A1 *

Also Published As

Publication number Publication date
JP2004311975A (ja) 2004-11-04
KR100767492B1 (ko) 2007-10-17
WO2004086483A1 (fr) 2004-10-07
TWI335610B (fr) 2011-01-01
US20060251828A1 (en) 2006-11-09
TW200423213A (en) 2004-11-01
KR20050117576A (ko) 2005-12-14
EP1610369A1 (fr) 2005-12-28
JP4369264B2 (ja) 2009-11-18

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Effective date: 20070206

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NISHIZAWA, KENICHI

Inventor name: TERAI, YASUHIRO

Inventor name: ASANO, AKIRA

Inventor name: KAWAMURA, KOHEIC/O TOKYO ELECTRON LIMITED

Inventor name: KOBAYASHI, YASUOC/O TOKYO ELECTRON LIMITED

17Q First examination report despatched

Effective date: 20070813

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Ipc: H01J 37/32 20060101ALI20131217BHEP

Ipc: H01L 21/02 20060101ALI20131217BHEP

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