Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
  • H01H83/00—Protective switches, e.g. circuit-breaking switches, or protective relays operated by abnormal electrical conditions otherwise than solely by excess current
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
  • H01H35/00—Switches operated by change of a physical condition
  • H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
  • H01H35/145—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch operated by a particular acceleration-time function
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
  • H01H1/00—Contacts
  • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M10/00—Secondary cells; Manufacture thereof
  • H01M10/04—Construction or manufacture in general
  • H01M10/0436—Small-sized flat cells or batteries for portable equipment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M10/00—Secondary cells; Manufacture thereof
  • H01M10/05—Accumulators with non-aqueous electrolyte
  • H01M10/058—Construction or manufacture
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M10/00—Secondary cells; Manufacture thereof
  • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
  • H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
  • H01M10/4257—Smart batteries, e.g. electronic circuits inside the housing of the cells or batteries
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M6/00—Primary cells; Manufacture thereof
  • H01M6/40—Printed batteries, e.g. thin film batteries
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
  • H01G11/08—Structural combinations, e.g. assembly or connection, of hybrid or EDL capacitors with other electric components, at least one hybrid or EDL capacitor being the main component
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
  • H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
  • H01H37/00—Thermally-actuated switches
  • H01H2037/008—Micromechanical switches operated thermally
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
  • H01H35/00—Switches operated by change of a physical condition
  • H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M10/00—Secondary cells; Manufacture thereof
  • H01M10/05—Accumulators with non-aqueous electrolyte
  • H01M10/052—Li-accumulators
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M10/00—Secondary cells; Manufacture thereof
  • H01M10/05—Accumulators with non-aqueous electrolyte
  • H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
  • H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
  • H01M10/0562—Solid materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M4/00—Electrodes
  • H01M4/02—Electrodes composed of, or comprising, active material
  • H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
  • H01M2004/027—Negative electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M4/00—Electrodes
  • H01M4/02—Electrodes composed of, or comprising, active material
  • H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
  • H01M2004/028—Positive electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M2300/00—Electrolytes
  • H01M2300/0017—Non-aqueous electrolytes
  • H01M2300/0065—Solid electrolytes
  • H01M2300/0068—Solid electrolytes inorganic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M2300/00—Electrolytes
  • H01M2300/0017—Non-aqueous electrolytes
  • H01M2300/0065—Solid electrolytes
  • H01M2300/0068—Solid electrolytes inorganic
  • H01M2300/0071—Oxides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M4/00—Electrodes
  • H01M4/02—Electrodes composed of, or comprising, active material
  • H01M4/36—Selection of substances as active materials, active masses, active liquids
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M4/00—Electrodes
  • H01M4/02—Electrodes composed of, or comprising, active material
  • H01M4/36—Selection of substances as active materials, active masses, active liquids
  • H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
  • H01M4/52—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
  • H01M4/525—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
  • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
  • H01M50/10—Primary casings; Jackets or wrappings
  • H01M50/102—Primary casings; Jackets or wrappings characterised by their shape or physical structure
  • H01M50/11—Primary casings; Jackets or wrappings characterised by their shape or physical structure having a chip structure, e.g. micro-sized batteries integrated on chips
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
  • Y02E60/10—Energy storage using batteries
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present invention relates to solid-state energy-storage devices and integration of these devices with activity-actuated switches and circuits. More particularly, this invention relates to methods and systems for providing various apparatus with a solid-state energy-storage device (e.g., battery) that, in some embodiments, is automatically activated at a later time to perform various functions and/or provides an active Radio Frequency (RF) tagging system for peel-and-stick applications.
• a solid-state energy-storage device e.g., battery
• RF Radio Frequency
• the present invention also relates to such thin-film solid-state energy-storage devices made using a reel-to-reel type moving mask and/or substrate webs moving at independently controlled speeds in a deposition station.
• Portable devices typically use batteries as power supplies. Batteries must have sufficient capacity to power the device for at least the length of time the device is in use. Sufficient battery capacity using conventional current batteries generally are heavy, large and cannot be incorporated into small packages. Another drawback is that most batteries have to be manually switched on for use. In many applications, there is a need for a battery that can be automatically switched on in response to an event or occurrence of some sort.
• batteries are fairly expensive. As a result, economics prevent widespread use of batteries since currently, retailers would rarely consider providing a battery as part of the packaging associated with many items. Typically, batteries may be provided as part of the product shipped but not as part of the packaging.
• a system includes a substrate, a circuit connected to the substrate, and a thin-film battery connected to the substrate and connected to the circuit.
• the thin-film battery powers the circuit.
• An acceleration-enabled switch is also connected to the substrate for electrically activating the circuit.
• the acceleration-enabled switch is a MEMS device.
• the acceleration-enabled switch includes at least one cantilevered beam.
• the acceleration-enabled switch includes at least one cantilevered beam and an electrical contact. The at least one cantilevered beam contacts the electrical contact in response to an acceleration.
• the acceleration-enabled switch includes a first cantilevered-beam-closure-switch, and a second cantilevered-beam-closure-switch.
• the first cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration
• the second cantilevered-beam-closure-switch forms electrical contact in response to a second acceleration.
• the first acceleration is different than the second acceleration.
• the acceleration-enabled switch forms a first electrical contact in response to a first acceleration, and forms a second electrical contact in response to a second acceleration. The first acceleration is different than the second acceleration.
• the first acceleration-enabled switch activates the circuit differently in response to acceleration in either of two different planes.
• a first cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration in a first plane
• a second cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration in response to a second acceleration in a second plane.
• Some embodiments further include a memory and/or a timer. The timer records the time when one of the first cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration, or the time when the second cantilevered-beam-closure-switch forms electrical contact in response to a second acceleration is stored in memory.
• the time when the other of the first cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration, or the time when the second cantilevered-beam-closure-switch forms electrical contact in response to a second acceleration is stored in memory.
• the battery is sputtered onto the substrate, and the circuit is formed on the battery.
• the circuit is sputtered onto the substrate, and the battery is sputtered onto the circuit.
• the system fits within a device such as a package, or an ordinance.
• an adhesive attached to the substrate wherein the system is adhesively attached to the device. The adhesive attached to the substrate.
• Some embodiments include a substrate and a thin- film battery positioned on the substrate.
• the thin-film battery further includes a first lead, a first electrical contact in electrical communication with the first lead, a second lead, and a second electrical contact in electrical communication with the second lead.
• the system also includes an activity-activated switch comiected to one of the first and second leads on the substrate for electrically connecting the thin-film battery to the first electrical contact and the second electrical contact.
• An adhesive is attached to the substrate.
• the activity-activated switch is activated in response to acceleration.
• the activity-activated switch is activated in response to a magnetic field.
• the activity-activated switch is activated in response to moisture.
• the activity-activated switch is activated in response to a radio signal. In yet another embodiment, the activity-activated switch is activated in response to pressure, hi still another embodiment, the activity-activated switch is activated in response to light.
• the system also includes electronics attached to the first lead and the second lead. The electronics are also associated with the substrate. In some embodiments, the electronics are attached to the substrate and the thin-film battery is attached to the electronics. In another embodiment, the thin-film battery is attached to the substrate and at least a portion of the electronics is attached to the thin-film battery.
• the activity-activated switch is formed using microelectronic fabrication techniques.
• Some embodiments provide a method that includes activating an activity-activated switch to place a thin-film battery in communication with a set of electronics;, and directing an ordinance using the powered electronics. Another method includes activating an activity- activated switch to place a thin-film battery in communication with a set of electronics and storing a start time for a warranty using the powered electronics.
• the activity-activated switch includes accelerating the activity-activated switch at a selected level.
• the method also includes running a self-check, and storing the result of the self-check in response to activating the activity-activated switch.
• other accelerations are stored. The time associated with other accelerations over a selected threshold is also recorded. The times of the other accelerations to the time are compared to other periods, such as when a shipper was in possession of the activity-activated switch.
• the systems that include one or more batteries, and devices to enable or activate the battery or batteries, and a circuit can be formed on a film and placed into small packages or products.
• the batteries, activation device and a circuit can be formed on a flexible sheet having an adhesive thereon so that the package is essentially a label that can be placed on the outside of a package or with the product packaging or on the product or device.
• a complete system can also be incorporated into a product or device to control an aspect of the device or record information about the product or device.
• the enabling or activating apparatus enable a switch in response to an event or events at a later time. The systems do not have to be manually activated.
• the systems are automatically activated in response to an event, such as a rapid acceleration (such as being fired from a gun), a slow acceleration (such as being picked up off a shelf), or an intermediate acceleration (such as being dropped to the floor).
• an event such as a rapid acceleration (such as being fired from a gun), a slow acceleration (such as being picked up off a shelf), or an intermediate acceleration (such as being dropped to the floor).
• the entire system is inexpensive. As a result, these systems can affordably be used on a widespread basis. As a result, manufacturers, wholesalers and event retailers could provide such a system either attached to a device or as part of the packaging associated with many devices or products. In addition, these systems are small, light and provide sufficient energy storage to accomplish at least one function.
• the system is fabricated from non-toxic materials so that a hazard is not being used with a product or device.
• the present invention provides a roll-to-roll deposition system that uses a roll-to-roll mask having a plurality of different masking patterns for various deposition operations.
• FIG. 1 A is a cross-sectional view of an energy-storage device according to the present invention.
• FIG. IB is a cross-sectional view of another embodiment of an energy-storage device according to the present invention.
• FIG. IC is a cross-sectional view of an energy-storage device according to the present invention.
• FIG. ID is a cross-sectional view of an energy-storage device and a supercapacitor according to the present invention.
• FIG. 2 A is a flowchart of one embodiment of a fabrication process according to the teachings of the present invention.
• FIG. 2B is a flowchart of one embodiment of a fabrication process according to the teachings of the present invention.
• FIG. 2C is a flowchart of one embodiment of a fabrication process according to the teachings of the present invention.
• FIG. 3 A is a diagram of a device for fabricating a thin-film battery according to the teachings of the present invention.
• FIG. 3B is a diagram of a device for fabricating a thin-film battery according to the teachings of the present invention.
• FIG. 4 is a diagram of another embodiment of a device for fabricating a thin-film battery according to the teachings of the present invention.
• FIG. 5 A is a diagram of another embodiment of a device for fabricating a thin-film battery- according to the teachings of the present invention.
• FIG. 5B is a diagram of another embodiment of a device for fabricating a thin-film battery according to the teachings of the present invention.
• FIG. 6 is a diagram of another embodiment of a device for fabricating a thin-film battery according to the teachings of the present invention.
• FIG. 7 is a diagram of another embodiment of a device for fabricating a thin-film battery according to the teachings of the present invention.
• FIG. 8 A shows a plan view of a starting substrate of an embodiment that will have an integrated battery and device sharing a common terminal.
• FIG. 8B shows a plan view of the substrate of FIG. 8A after deposition of the integrated battery and device sharing a common terminal.
• FIG. 8C shows a plan view of the substrate of FIG. 8B after placing and wiring a separately fabricated chip connected to the integrated battery and device sharing a common terminal.
• FIG. 8D shows a plan view of the substrate of FIG. 8C after placing and wiring a loop antenna.
• FIG. 8E shows a plan view of the substrate of FIG. 8D after a top encapsulation layer has been deposited.
• FIG. 8F shows an elevation view of the starting substrate of FIG. 8 A.
• FIG. 8G shows an elevation view of the partially built device of FIG. 8B.
• FIG. 8H shows an elevation view of the partially built device of FIG. 8C.
• FIG. 81 shows an elevation view of the partially built device of FIG. 8D.
• FIG. 8J shows an elevation view of the device of FIG. 8E.
• FIG. 8K shows a perspective view of the device of FIG. 8E at a magnetic-recharging station.
• FIG. 8L shows a perspective view of the device of FIG. 8E at a light-recharging station.
• FIG. 8M shows a schematic of the device of FIG. 8E at a radio-wave-recharging station.
• FIG. 9 A shows a schematic drawing of a system including a battery, a circuit and an activity- activated switch, wherein the activity-activated switch is in the open position.
• FIG. 9B shows a schematic drawing of a system including a battery, a circuit and an activity- activated switch, wherein the activity-activated switch is in the closed position.
• FIG. 9C shows a schematic drawing of a system including a battery, a circuit and an activity- activated switch, wherein the activity-activated switch is in the open position and wherein the circuit includes a memory portion and a timing portion.
• FIG. 9D shows a schematic drawing of a system including a battery, a circuit and an activity- activated switch, wherein the activity-activated switch is in the open position and wherein the circuit includes a memory portion, a timing portion and a processor portion.
• FIG. 10 is a flowchart showing the method of operation of the systems shown in FIGs. 9A-9D.
• FIG. 11 shows a schematic drawing of the system having a battery and an activity-activated switch.
• FIG. 12A shows a top view of one embodiment of an activity-activated switch.
• FIG. 12B shows a side view of the embodiment of an activity-activated switch shown in FIG. 12A.
• FIG. 13 shows another embodiment of an activity-activated switch that includes portions for detecting acceleration in X, Y and Z-axes.
• FIG. 14A shows one embodiment of label that includes a system having an activity-activated switch.
• FIG. 14B shows another embodiment of label that includes a system having an activity-activated switch.
• FIG. 15 shows an ordinance that includes a system having an activity-activated switch.
• FIG. 16A shows a top view of an embodiment of an activity-activated switch that is activated by a magnetic field.
• FIG. 16B is a side view of the embodiment of an activity-activated switch shown in FIG. 16 A.
• FIG. 17 shows an embodiment of a pressure-sensitive activity-activated switch.
• FIG. 18 shows an embodiment of a moisture-sensitive activity-activated switch.
• FIG. 19 shows an embodiment of a RF-activated switch.
• FIG. 20 shows another embodiment of an activity-activated switch.
• FIG. 21 A is a perspective view of a wireless tagging system.
• FIG. 21B is a perspective view of another embodiment of a Radio Frequency Identification (RFID) device.
• RFID Radio Frequency Identification
• FIG. 21 C is a perspective view of another embodiment of an RFID device.
• FIG. 21D is a perspective view of another embodiment of an RFID device.
• FIG. 21E is a perspective view of another embodiment of an RFID device.
• FIG. 21 F is a cross-sectional view of one embodiment of an adhesive on a flexible substrate.
• FIG. 22 is a cross-sectional view of one embodiment of a battery formed on a flexible substrate.
• FIG. 23 A shows a schematic diagram of an RFID device.
• FIG. 23B shows a schematic diagram of another embodiment of an RFID device.
• FIG. 24A shows an embodiment of a shipping label that uses an RFID device.
• FIG. 24B shows an embodiment of a product label that uses an RFID device.
• FIG. 25 A shows a flowchart of a method of using an RFID device.
• FIG. 25B shows a flowchart of another embodiment of a method of using an RFID device.
• FIG. 25C shows a flowchart of another embodiment of a method of using an RFID device.
• FIG. 25D shows a flowchart of another embodiment of a method of using an RFID device.
• FIG. 25E shows a flowchart of another embodiment of a method of using an RFID device.
• FIG. 26A shows a flowchart of a method of forming an RFID device.
• FIG. 26B shows a flowchart of a further embodiment of a method of forming an RFID device.
• FIG. 27 is a diagram of one aspect of forming RFID devices that includes a rolled release layer.
• FIG. 28A shows a cross sectional view of a system for making an RFID device.
• FIG. 28B shows another view of the system for making an RFID device shown in FIG. 28 A.
• FIG. 29A is a cross sectional view of an embodiment of a system for making an RFID device.
• FIG. 29B shows another view of the system for making an RFID device shown in FIG. 29 A.
• each battery in the Figures or the description can be implemented using one or more cells, and if a plurality of cells is implemented, the cells can be wired in parallel or in series.
• a battery or more than one cell is shown or described, other embodiments use a single cell, and where a single cell is shown or described, other embodiments use a battery or more than one cell.
• the references to relative terms such as top, bottom, upper, lower, and other relative terms refer to an example orientation such as used in the Figures, and not necessarily an orientation used during fabrication or use.
• wafer and substrate as used herein include any structure having an exposed surface onto which a film or layer is deposited, for example, to form an integrated circuit (IC) structure or an energy-storage device.
• substrate is understood to include semiconductor wafers, plastic film, metal foil, molded plastic cases, and other structures on which an energy-storage device may be fabricated according to the teachings of the present disclosure.
• substrate is also used to refer to structures during processing that include other layers that have been previously or subsequently fabricated thereupon.
• both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art.
• Substrate is also used herein as describing any starting material that is useable with the fabrication method as described herein.
• a battery refers to one example of an energy-storage device.
• a battery may be formed of a single cell or a plurality of cells connected in series or in parallel.
• a cell is a galvanic unit that converts chemical energy, e.g., ionic energy, to electrical energy.
• the cell typically includes two electrodes of dissimilar material isolated from each other by an electrolyte through which ions can move.
• task refers broadly to software or firmware routines, state machines, and/or combinatorial logic that are adaptable to perform a particular function when exercised or executed.
• aeroatom refers to a particle, molecule, or ion of material that has not yet been formed into a structure or film.
• RF Radio-Frequency
• FIG. 1A shows an embodiment of an energy-storage device 50 according to the present invention.
• a substrate 55 is provided, on which is formed a contact film 57.
• Contact film 57 acts as a current collector and is connected to a lead 58, which, in some embodiments, connects one pole of the energy storage device 50 to an external circuit.
• the electronic circuit is attached to the battery as formed. In other embodiments, the circuit may be remote from the battery, for example, not attached to the battery as formed.
• An electrode film 59 is formed on the contact film 57. hi some embodiments, the electrode film 59 substantially covers a surface of the contact film 57 so as to minimize resistance by maximizing the area of the interface between the films.
• the electrode film 59 is a cathode for a thin-film battery. In other embodiments, electrode film 59 is an electrode of a supercapacitor. An electrolyte film 61 is formed on the electrode film 59. An electrode film 63 is formed on the electrolyte film 61. The electrolyte film 61 isolates electrode film 59 from electrode film 63. A contact film 65 is formed on electrode film 63. Contact film 65 acts as a current collector and is connected to a lead 67, which connects one pole of the energy storage device 50 to an external circuit. In some embodiments, the contact film 65 substantially covers a surface of the electrode film 63 to as to minimize resistance by maximizing the area of the interface between these films. In some embodiments, the electrode film 63 is an anode for a thin-film battery. In other embodiments, electrode film 63 is an electrode of a supercapacitor.
• Figure IB shows another embodiment of the energy-storage device 50.
• This particular embodiment is closely related to the embodiment shown in Figure 1 A and therefore, for the sake of brevity, only the difference will be discussed.
• the main difference is that a layer of adhesive 56 is placed on the substrate 55.
• the adhesive 56 could be any type of adhesive including a releasable type of adhesive or a permanent adhesive.
• the adhesive layer 50 in some embodiments, is a peel-and-stick type of adhesive covered by a peelable paper or plastic-film layer 156.
• the adhesive layer 56 covers the entire substrate 55 surface while, in other embodiments, the adhesive layer only covers a portion of the substrate surface 55.
• the adhesive 56 is attached to the energy-storage device 50 (e.g., on top of contact 65) rather than directly to the substrate 55.
• Figure IC shows a cross sectional view of an embodiment of an energy-storage device 50C.
• a substrate 55 is provided and, in some embodiments, includes additional layers and/or devices formed therewith. As will be discussed and shown below, such other devices include activity-actuated switches and circuits.
• a battery or energy-storage device, or other device is formed on or atop the battery.
• the battery is formed atop the circuit, or the circuit and activity-actuated switch
• the substrate 55 includes a substrate as described above and elsewhere herein.
• Contact film 57 and electrode 59 are formed on the substrate 55 according to the methods described herein. In some embodiments, contact film 57 and electrode 59 are metal films deposited on the substrate according to other methods as known in the art. Contact film 57 and electrode 59 act as contacts for connecting the energy-storage device 50C to other circuit elements (not shown).
• Electrode first film 59 is formed on contact 57.
• Electrode first film 59 includes a metal or intercalation material in some embodiments, for example, thin-film battery embodiments in which the electrode first film 59 functions as a cathode.
• the electrode first film 59 includes lithium metal and or a lithium-intercalation material.
• electrode first film 59 is a metal oxide. It is desirable to maximize the contact interface between the electrode first film 59 and contact film 57. Accordingly, in some embodiments, the electrode first film 59 substantially covers contact film 57 except for a portion reserved for connection to external circuits.
• An electrolyte film 61C is formed on, or at least partially on, the electrode first film 59.
• the electrolyte film 61C in some embodiments, completely encloses the electrode first film 59.
• the electrolyte film 61 C is formed using the systems and methods described herein.
• a first material of the electrolyte film 61C is deposited using a first source, which directs a first electrolyte material (adatoms) to the location on the substrate or, as shown in Figure IC, to a location on the electrode first film 59.
• Electrolyte film 61C completely separates the electrode first film 59 from the electrode second film 63.
• the electrode second film 63 includes a metal or intercalation material in some embodiments, for example, thin-film battery embodiments in which the electrode second film is an anode. In other embodiments, such as supercapacitor embodiments, electrode second film 63 is a metal oxide. Electrode second film 63, in some embodiments is deposited according to the methods described herein. In other embodiments, electrode second film 63 is formed according to methods known in the art.
• the electrolyte film 61 C, as deposited, includes the electrolyte material.
• the electrolyte material in some embodiments, is a physical vapor deposition source.
• the first source is a chemical vapor deposition source.
• a second source provides energized particles to the location. The energized particles impinge on the electrolyte material and assist in forming a desired structure of the electrolyte film 61C. In some embodiments, the second source provides energized particles simultaneously with the first source supplying the electrolyte material.
• the use of the energized particles conforms the electrolyte film 61C to electrode first film 59 such that the electrolyte film provides the necessary insulative property, namely preventing electrons from traveling directly between the electrode first film 59 and the electrode second film 63, i.e., shorting the electrodes, while also letting ions (e.g., lithium ions) travel between cathode 59 and anode 63 (the direction of travel depending on whether the device is charging or discharging).
• the electrode 59 is designated “anode” and the electrode 63 is designated “cathode,” thus switching which direction of ion movement is charging and which is discharging.
• the second source is an ion source as described herein, e.g., sources 313, 413, or 713.
• the second source provides energized ions that supply energy to the electrolyte material from the first source.
• the energy that is supplied by the ions assists in conforming the formed electrolyte film 61C to the electrode first layer 59. It is believed that the use of the energized particles in the energy range referenced herein provides the growing electrolyte material an extended period of mobility upon the previous film surface, and this extended period of mobility allows the electrolyte material to grow in a more defect-free manner.
• the electrolyte film 61 C is formed as thin as possible (“ultra-thin") to lower its contribution to the internal resistance of the energy-storage device. It is also desired to maintain the electrolyte's property of blocking the flow of electrons (which would result in a short of the cathode to the anode) while permitting the flow of the ions that provide the battery function across the electrolyte.
• the electrolyte film 61C is formed to a thickness 61C of less than about 5000 Angstroms. In some embodiments, the electrolyte film 61 C has a thickness 61C of less than about 2500 Angstroms.
• the electrolyte film 61C has a thickness 61C of less than about 1000 Angstroms. In some embodiments, the electrolyte film 61C has a thickness 61C of less than about 500 Angstroms, i some embodiments, the electrolyte film 61 C has a thickness 61C of less than about 250 Angstroms. In some embodiments, the electrolyte film 61C has a thickness 61C of less than about 100 Angstroms. In some embodiments, the electrolyte film 61C has a thickness 61C in a range of about 10 Angstroms to about 200 Angstroms. In some embodiments, the electrolyte film 61 C has a thickness 61C in a range of about 10 Angstroms to about 100 Angstroms.
• the electrolyte film 61C includes LiPON and is formed using the first source 311 with the second source 313 or 413.
• LiPON refers generally to lithium phosphorus oxynitride materials.
• One example is Li 3 PO 4 N.
• Other examples incorporate higher ratios of nitrogen in order to increase lithium ion mobility across the electrolyte.
• the first source 311 provides Li 3 PO 4 in a nitrogen atmosphere.
• the first source 311 provides Li 3 PO 4 in a vacuum environment wherein the background pressure is less than 1E-3 Torr.
• the second source 313 or 413 provides energized particles from a source gas.
• the secondary source is an ion source supplying energetic ions from a source gas comprising oxygen (e.g., O 2 ) or nitrogen (e.g., N 2 ).
• the source gas in other embodiments, comprises a noble gas, e.g., argon, xenon, helium, neon, and krypton.
• the energized particles and/or ions increase the energy of the material forming the electrolyte film 61C, thus enhancing layer-by-layer growth. Accordingly, the electrolyte film is of a higher quality than conventional electrolyte layers.
• An embodiment for forming a LiPON electrolyte film 61 C includes the first source providing Li 3 PO at or to the location where the LiPON electrolyte film is to be formed and second source providing energized nitrogen particles to or near the same location.
• the energized nitrogen particles react with Li 3 PO 4 provided at the location for forming the electrolyte film. This increases the amount of nitrogen in the LiPON electrolyte film, increasing the nitrogen content is desirable to increase lithium ion mobility across the electrolyte.
• the chamber in which the substrate 55 is positioned has a nitrogen-enlianced atmosphere.
• a LiPON electrolyte film 61 C is formed by the Li 3 PO supplied by the first source reacting with the nitrogen in the chamber.
• the second source provides energized particles assisting in the formation of the electrolyte film.
• the second source also provides nitrogen to the Li 3 PO 4 at the location.
• the Li 3 PO 4 reacts with both the nitrogen in the chamber and with energized, nitrogen containing particles supplied by the second source. This increases the nitrogen content of the electrolyte film 61 C.
• increasing the nitrogen content in the electrolyte film 61 C is desirable since published data from the Department of Energy lab at Oak Ridge, Tennessee indicates an increase in nitrogen content increases the ion conductivity or mobility in the electrolyte film.
• the systems shown herein for depositing films are adaptable to form the electrolyte film 61 C according to the present invention. Examples of some such systems are shown in Figures 3 A - 7.
• FIG. 70 shows another embodiment of an energy storage device according to the teachings of the present invention.
• a supercapacitor 70 is formed on the energy-storage device 50C having the ultra-thin electrolyte film 61.
• the energy-storage device 50C being formed on the substrate prior to forming the supercapacitor 70 represents an embodiment of layer/devices being formed on the substrate prior to applying the techniques described herein to form energy- storage and/or energy conversion devices.
• the supercapacitor 70 includes an intermediate film 73 formed in physical contact with electrode films 71 and 75.
• the intermediate film 73 is an electrolyte for storing and discharging electrical charge by a faradaic process.
• the intermediate film 73 includes a dielectric material.
• the contact film 65 is in physical and electrical contact with electrode 71.
• contact film 65 is a shared contact film for both the energy storage device 50C and supercapacitor 70.
• energy storage device 50C and supercapacitor 70 have separate contact films.
• the intermediate film 73 includes LiPON.
• the electrolyte film 73 includes TaO.
• the electrode films are RuO 2 .
• a contact film 77 is formed on the electrode film 75.
• a lead 76 extends from the contact film 77 to contact one plate of the supercapacitor to an external circuit.
• contact film 65 is omitted, and a single electrode film serves for both an electrode 71 of device 70 and as an electrode 63 of device 50C.
• a method 250A for fabricating the solid-state energy-storage device 50 will now be described with reference to Figures 1 A and 2A.
• the method includes providing a substrate 55 (process operation 251) and depositing a cathode contact film 57 on the substrate 55 (process operation 253).
• process operation 251 includes providing a substrate having insulator layers or other layers/devices formed thereon.
• the method further includes a process operation 255 of depositing an electrode material to a location on the substrate, while simultaneously supplying energized particles to the electrode material at the substrate.
• an assist source provides the energized particles.
• the energized particle beam is directed to the same location on the substrate as the electrode material.
• the energized particles are energized ions.
• the energized ions include a material that is different than the electrode material.
• the energized particles or the ion beam assist in controlling growth of the structure of the electrode material at the location.
• process operation 255 is used to form a cathode film or layer 59 for a solid-state, thin-film battery.
• the cathode film 59 is in electrical and physical contact with the cathode contact.
• An electrolyte film 61 is deposited, process operation 257, on the cathode film 59.
• An anode film 63 is deposited, process operation 259, on the electrolyte film.
• the electrolyte film 61 separates the cathode and anode films 59 and 61 to prevent shorting the energy-storage device 50, e.g., battery.
• An anode contact is formed, process operation 261, in electrical and physical contact with the anode film.
• the thin-film battery according to the present invention is now formed and is subjected to post energy-storage device fabrication process operations 263.
• the deposition of the cathode film includes directing a first material (e.g., adatoms) to a location on the substrate, while simultaneously supplying energized particles (e.g., ions) of a second material to the location on the substrate.
• a first material e.g., adatoms
• energized particles e.g., ions
• the second material is different from the first material.
• the energized particles supply energy to the first material to assist in the growth of a desirable crystal structure in the cathode film. Moreover, this controls the stoichiometry of the growing film at the location on the substrate.
• the first material is a lithium-intercalation material used as a solid-state, thin-film battery cathode.
• the assist source provides ions that provide energy in a range of 5 eN to 3000 eN to the lithium- intercalation material. Control of the energy in the ions produced by the assist source provides in situ control for growing a lithium-intercalation film having a crystalline structure. The energy from the ions assists the formation of lithium-intercalation materials into a crystalline structure at the time of deposition.
• the gas used to form the ions is used to control the stoichiometry of the growing, crystalline film.
• an ionized, assist beam of O 2 is used to control the growth and stoichiometry of a LiCoO intercalation material.
• the O 2 in the ion assist beam combines with LiCo at the location to form the LiCoO 2 intercalation material.
• the crystalline structure of a thin film formed according to the teachings herein has a higher order than those achieved by conventional cathode film forming techniques.
• a highly ordered crystalline cathode film is desirably achieved according to the teachings described herein by providing the required energy to form the desired, high-order and appropriately oriented crystal structure without subjecting the substrate, and other layers formed on the substrate including the cathode-contact film to a high- temperature anneal.
• each layer can be annealed using a different anneal process (such as using ion assist beams having different energies for different layers, or depositing and annealing at different rates or for different durations). Further, by annealing the surface layer of the previous layer, a subsequent layer can be deposited onto a surface that has been ordered in a specific way (for example, to achieve a specific crystal orientation, or a specific ion-bonding surface) that enhances the quality of that subsequent layer.
• a different anneal process such as using ion assist beams having different energies for different layers, or depositing and annealing at different rates or for different durations.
• FIG. 2B shows one embodiment of a method 250B for fabricating an energy-storage device.
• Process operations 251, 253, 259, 261, and 263 are the substantially similar to the process operations described above with reference to Figure 2A.
• Process operation 255C is a process operation for depositing a cathode film at least partially on the cathode contact film.
• the cathode film is deposited as described above in process operation 255.
• the cathode film is deposited according to other deposition processes known in the art.
• the electrolyte film is formed by depositing an electrolyte material to a location at least partially in contact with the cathode film (process operation 257C).
• the electrolyte material is in contact with a substantial portion, if not all of, a surface of the cathode film.
• an assist source simultaneously supplies energized particles to the electrolyte material as it forms the electrolyte film.
• the assist source supplies a beam of energized ions of an assist material different than the electrolyte material.
• the second material beam is directed to the same' location on the substrate as the electrolyte material.
• the energized ion beam assists in controlling growth of the structure of the electrolyte film.
• the ion beam is unfocused in some embodiments.
• the ion beam is focused in another embodiment.
• the deposition of the electrolyte film includes directing an electrolyte material to a location at least partially in contact with the cathode film, while simultaneously supplying energy to the electrolyte material.
• the energy is supplied by energized particles.
• the energized particles are energized ions.
• the energized particles from the assist source are of a different material than the electrolyte material. The energized particles supply energy to the electrolyte first material to assist in the growth of a desirable, solid electrolyte-film structure. Moreover, this controls the stoichiometry of the growing electrolyte film.
• the electrolyte material is a lithium phosphorus oxynitride.
• the assist source provides ions that provide energy in a range of about 5 eN to about 5000 eN to the lithium phosphorus oxynitride ("LiPO ⁇ "). Control of the energy in the ions produced by the assist source provides in situ control for growing a lithium phosphorus oxynitride structure at the location. The energy from the ions assists the formation of the lithium phosphorus oxynitride material into a desirable structure at the time of deposition.
• the gas used to form the ions is used to control the stoichiometry of the growing electrolyte film.
• an ionized assist beam of O 2 is used to control the growth and stoichiometry of a lithium phosphorus oxynitride material.
• an ionized assist beam of ⁇ is used.
• the N 2 not only controls growth and stoichiometry of the electrolyte film, but also injects additional nitrogen into the electrolyte film. This is desirable due to the ionic transportivity of a LiPON electrolyte film is dependant on the amount of nitrogen in the film.
• FIG. 2C shows one embodiment of a method 250C for fabricating an energy-storage device.
• Process operations 251, 253, 257, 261, and 263 are substantially similar to the process operations described above with reference to Figure 2A.
• Process operation 255C is a process operation for depositing a cathode film at least partially on the cathode contact film.
• the cathode film is deposited as described above with reference to Figure 2A.
• the cathode film is deposited according to other deposition processes known in the art.
• Process operation 259D is a process operation for depositing an electrode material to a location at least partially on the electrolyte film, while simultaneously supplying energized particles to the electrode material.
• the energized particles are directed to the same location as the electrode material.
• the energized particles are energized ions.
• the energized ions include a second material that is different than the first material.
• the energized particles or the ion beam assist in controlling growth of the structure of the electrode material.
• Process operation 259D in some embodiments, is used to form an anode film for a solid-state thin-film battery.
• the anode film is in electrical and physical contact with the anode contact and electrolyte films.
• the deposition of the anode film includes directing an electrode material to a location at least partially in contact with the electrolyte film, while simultaneously supplying energized particles of a second material.
• the electrode material includes a lithium-intercalation material used as a battery anode.
• the anode includes is a lithium metal or a lithium alloy.
• the anode includes a carbonaceous material, such as graphite or diamond-like carbon.
• the anode includes a metal oxide, for example, RuO or NaO.
• the anode includes a nitride material.
• a secondary source provides particles, which are ions, in some embodiments, that provide energy in a range of about 5 eN to about 3000 eN to the lithium-intercalation material.
• the ions provide energy of about 135 eN.
• the ions provide energy in a range of about 5 eN to about 100 eN.
• the energy range of is about 5 eN to about 1,000 eN.
• the energy range in a further embodiment is about 50 eN to about 90 eV.
• the energy range in a further embodiment is about 55 eN to about 85 eN.
• the energy range in a further embodiment is about 60 eN to about 80 eN.
• the energy range in a further embodiment is about 65 eN to about 75 eN.
• the energy range in a further embodiment is about 10 eN to about 100 eN.
• the energy range in a further embodiment is about 10 eN to about 90 eN.
• the energy range in a further embodiment is about 30 eN to about 300 eN.
• the energy range is in the range of about 60 eN to 150 eN.
• the energy of the ions from the secondary source is about 70 eN.
• the ions provide energy in a range of about 45 eN to about 95 eN.
• Control of the energy in the ions produced by the secondary source provides in situ control for growing a lithium-intercalation crystalline structure at the location.
• the energy from the ions assists the formation of lithium-intercalation materials into a crystalline structure at the time of deposition.
• the gas used to form the ions is used to control the stoichiometry of the growing crystalline film.
• the crystalline structure of an electrode thin film formed according to the teachings herein has a higher order than those achieved by conventional film forming techniques.
• Conventional techniques rely on a high-temperature, post-deposition anneal that affects the substrate and other layers as well as the film intended to reorder and crystallize the structure of that film.
• the present invention provides a controlled energy source at the time of deposition or after the time of deposition that reorders the surface of the deposition film without substantially heating the underlying layers or substrate.
• the energy is provided while depositing each atomic layer of a film such that each atomic layer is ordered as crystallizes into the film.
• energy sources include an ion beam that either react with the adatoms being deposited and/or provide kinetic energy to assist in deposition of the film.
• energy sources include high-temperature, short-duration heat sources, short-duration plasma sources, lasers, and other high-intensity photo sources that reorder the crystal structure adjacent the surface of the film without affecting other layers or the substrate.
• a highly ordered crystalline cathode or anode is desirably achieved according to the teachings described herein.
• the fabrication process describes forming cathode and anode films in a certain order, other embodiments reverse the order of the cathode film and anode film.
• the fabrication process describes forming cathode and anode films, for example in a battery.
• the cathode and anode films are electrodes of a battery.
• Other embodiments include films forming various layers of supercapacitors.
• Supercapacitors operate In these embodiments, at least one of the films forming the supercapacitor, e.g., electrode films 71, 75 and electrolyte and/or dielectric film 73, have improved crystalline structure, crystallite size, or fewer defects without resorting to a high temperature anneal of the entire structure to provide these properties. Accordingly, techniques and systems for fabricating thin films for use in an energy-storage device as described herein are applicable to both solid-state batteries and solid-state capacitors.
• the thin-film energy-storage device is formed on a substrate.
• a contact film which is electrically conductive and does not react with a subsequently deposited, adjacent cathode film, is formed on the substrate.
• the contact film acts as a barrier between the substrate and the cathode film.
• the contact film further acts as a current collector and as a connection between the cathode film and circuits that are external to the energy-storage device.
• the contact film has a thickness of greater than 0.3 microns.
• Figure 3A shows a deposition apparatus 305 including a reaction chamber 307 in which is positioned a substrate 309 on which an energy-storage device is to be fabricated.
• Reaction chamber 307 in some embodiments, is a sealed chamber that holds gases for the reaction and that provides a sub-atmospheric pressure. In some embodiments, it is desirable to hold the pressure in the chamber less than about 1 times 10 "3 Torr.
• a first material source 311 is provided in the chamber 307. The first source 311 produces a beam of adatoms 312 of a first material to be deposited on the substrate 309. In some embodiments, the first material source 311 is a physical vapor deposition source. In one such embodiment, the material source 311 is an e-beam source.
• the first source 311 is an arc source including, for example, a cathodic-arc source, an anodic-arc source, and a CANAD arc source.
• Arc sources are particularly suited for use as a source as they effectively operate in a chamber that is operated at low temperatures.
• the first source 311 is a physical deposition source including, for example, a sputtering source.
• the source 311 is a chemical vapor deposition source including, for example, a direct ion source using a hydrocarbon precursor gas. Beam 312 is focused on a location 319 on the substrate 309 whereat the material of the beam 312 is deposited to form a film of an energy-storage device.
• An assist source 313 is provided in the chamber 307 and produces a beam of energized particles 314 directed at least adjacent to the location 319 on the substrate 309.
• the assist source is an energized ion-producing source.
• the assist source 313 is offset from the first source 311 such that the beams from these sources are not coincident.
• the energized particle beam 314 provides the energy that is required to control the growth and stoichiometry of the material in the first beam 312 into a crystalline structure on the substrate 309 as is explained in greater detail herein.
• the energized particle beam 314 also provides elements that are required in the film being deposited.
• beam 314 is directed at least near location 319 such that sufficient energy to form the desired crystal structure and stoichiometry of the film being deposited is supplied by beam 314 to the material in first beam 312.
• the deposition system 305 includes at least one additional assist source 313 A.
• each of the additional sources 313 A provides an additional assist beam 314A that provides energy to arriving adatoms at the substrate.
• assist beams 314 are described below.
• Figure 3B shows another embodiment of a deposition apparatus 305.
• the assist source 313 produces an energy beam 314 that travels along a path that is essentially normal to the substrate 319.
• the source of material to be deposited 311 is offset from assist source 313.
• source 311 produces a beam of adatoms 312 that travels along a path that is non-normal to the substrate 319.
• the energy beam supplies energy to the adatoms from beam 312 as described herein.
• Figure 4 is a view substantially similar to Figure 3 A, except that depositing apparatus 405 includes an assist source 413 for producing the energized beam that is pivotally mounted to a bracket fixed in the chamber 307.
• the assist source 413 pivots to direct the energized particle beam 414 at a desired impingement angle to the surface of the substrate 309.
• the impingement angle 401 is in the range of about 15 degrees to about 70 degrees from normal to the substrate. Accordingly, in some embodiments, the impingement angle 401 is variable. In some embodiments, the impingement angle is about 45 degrees.
• the deposition system 405 includes at least one additional assist source 413A.
• each of the sources 413 A provides an additional assist beam 414A at an angle 402 that provides energy to arriving adatoms at the substrate.
• the energy provided by assist beam 414 differs from the energy provided by at least one of assist beams 414A.
• the assist beam 414 and 414A need not simultaneously transmit energy to the adatoms.
• the means by which the beams 414 and 414A transmit energy are different.
• the material in beams 414 and 414A are different.
• Figure 5 A is a view substantially similar to Figure 3 except that depositing apparatus 505 includes a plurality of first deposition sources 511.
• each one of the first deposition sources 511 directs its respective beam 512 to the location 319 on the substrate 309.
• every one of the first sources 511 produces a beam 512 including the same material.
• at least one of the first sources 511 produces a beam 512 of a material that is different than that of another of the first sources 511.
• the materials from the plurality of first beams 512 combine at the location 319 to form the desired film.
• the materials in first beams 512 combine with material from assist beam 314 to form the desired film.
• one of the first sources 511 directs its beam 512 to the substrate 319 but away from the location 319.
• two or more assist sources 313 provide energy to the adatoms of beams 512.
• Figure 5B shows another embodiment of a depositing apparatus 505B.
• a plurality of assist sources 313 is positioned to provide energy to a forming film at the substrate 319.
• a plurality of material sources 511 A, 51 IB, and 51 IC supply material to the chamber 307 and adjacent the surface of the substrate 319.
• each of the material sources 511 A, 51 IB, and 51 IC provide a same material and, thus, have the ability to provide a greater quantity than one of the sources alone.
• At least one of the material sources 511A, 511B, and 511 C provides a material different than another of the material sources. In some embodiments, these different materials react at the in chamber 307 to create the adatom material that will form a film on the substrate 319.
• at least one of the material sources 511 A, 51 IB, and 51 IC provides a precursor material into chamber 307 and another of the material sources provides a reactant material into the chamber. The precursor and reactant material react together to create the material that will form the film.
• at least one of the material sources 511A, 51 IB, and 51 IC includes a chemical reactor in which chemicals react. This source then injects the resultant material into the chamber.
• FIG 6 is a view substantially similar to Figure 5 A except that depositing apparatus 605 includes a plurality of first deposition sources 511 and a pivotable assist source 413. In some embodiments, this provides more material to a given deposition location. In some embodiments, this provides deposition at multiple locations, hi still other embodiments, this allows different materials from different sources to be combined.
• Figure 7 shows another embodiment of a depositing apparatus 705 according to the teachings of the present invention.
• Depositing apparatus 705 includes a reaction chamber 707 in which is positioned an elongate, flexible substrate 709 on which an energy-storage device is to be fabricated.
• the substrate 709 is fed from a source roll 710 over an arched thermal control surface 715 and taken up by an end roll 713.
• a first material source 711 is provided in the chamber 707 and is a physical deposition source.
• First source 711 produces a beam of adatoms 712 of a material to be deposited on the substrate 709.
• the first source 711 is an arc source including, for example, a cathodic arc source, an anodic arc source, and a CAN AD arc source.
• the first source 711 is a physical vapor deposition source including, for example, a sputtering source.
• source 711 is a chemical vapor deposition source.
• source 711 in some embodiments, represents a plurality of different material sources.
• Beam 712 is focused on a location 719 on the substrate 709 whereat the adatoms in the beam are deposited to form a film layer of an energy-storage device.
• An assist source 713 is provided in the chamber 707 and produces a beam of energized particles 714 directed at the substrate 709.
• the assist source 713 produces a beam of energized ions 714.
• the energized particle beam 714 provides the energy required to control growth and stoichiometry of the deposited material of the first beam 712.
• a crystalline structure is formed on the substrate 709 as is explained in greater detail herein.
• the substrate 709 in some embodiments, is an elastomer, polymer, or plastic web or sheet on which the energy-storage device is fabricated. Substrate 709 being elongate allows a plurality of energy-storage devices to be deposited on successive locations of the substrate, thereby improving the rate of energy device production. Moreover, a plurality of deposition apparatuses 705 or sources 711, in some embodiments, is provided for simultaneously depositing a plurality of films at different locations on the substrate 709. The thermal control surface 715 is connected to a thermal source 725, which controls the temperature of surface 715. The substrate 709 is in thermodynamic contact with surface 715 to thereby control the temperature of the substrate as needed for a particular deposition process on a particular substrate.
• the thermal source is a coolant source, for example a cryogenic vacuum pump that releases compressed helium toward the surface 715 to cool it.
• a thermally controlled surface 715 in direct contact with the substrate 709 especially when the direct contact is aligned or coincident with the location whereat a thin film is being formed, allows the use of substrates that have lower thermal degradation temperatures than are possible using conventional solid-state thin-film battery fabrication processes.
• the flexible substrate 709 and rolls 710, 713 can be combined with any of the embodiments shown in Figures 3A-6.
• the thermal source 725 is also combinable with any of the embodiments of Figures 3A-6.
• the pivotable assist sources 413 are combinable with any of the embodiments of Figures 3 A, 3B, 5 A, 5B, and 7.
• the material sources 511A, 51 IB, and 51 IC are combinable with embodiments of Figures 3A-5A and 6-7.
• the electrode second film e.g., films 59 or 71 is a lithium- intercalation material that overlays at least part of the first film, e.g., contact films 57 or 63, but does not extend beyond the boundary of the first film.
• the intercalation second film remains in a solid state during discharging and charging of the energy-storage device.
• the second film is deposited using the first deposition source simultaneously with the secondary source supplying energetic ions to the growing second film.
• the first deposition source is a physical vapor deposition source.
• the secondary source is an ion source supplying energetic ions from a source gas comprising oxygen (e.g., O 2 ) or nitrogen (e.g., N 2 ).
• the source gas in another embodiment, comprises a noble gas, e.g., argon, xenon, helium, neon, and krypton.
• the source gas in yet another embodiment, comprises a hydrocarbon material such as a hydrocarbon precursor. Selection of the secondary source gas is based on the desired effect on the stoichiometry of the deposited film.
• the secondary source in some embodiments, provides a focused beam of energized ions.
• the secondary source in some embodiments, provides an unfocused beam of energized ions.
• the energized ions provide energy to the lithium-intercalation material in the range of about 5eV to about 3,000eV.
• the energy range of is about 5eV to about l,O0OeV.
• the energy range in a further embodiment is about 10 eV to about 500 eV.
• the energy range in a further embodiment is about 30 eV to about 300 eV.
• the energy range is in the range of about 60eV to 150eV.
• the energy range is about 140 eV.
• the ions provide energy of about 135 eV.
• the ions provide energy in a range of about 5 eV to about 100 eV.
• the energy range of is about 5 eV to about 1000 eV.
• the energy range in a further embodiment is about 50 eV to about 90 eV.
• the energy range in a further embodiment is about 55 eV to about 85 eV.
• the energy range in a further embodiment is about 60 eV to about 80 eV.
• the energy range in a further embodiment is about 65 eV to about 75 eV.
• the energy range in a further embodiment is about 10 eV to about 100 eV.
• the energy range in a further embodiment is about 10 eV to about 90 eV.
• the energy range in a further embodiment is about 30 eV to about 300 eV.
• the energy range is in the range of about 60 eV to 150 eV.
• the energy of the ions from the secondary source is about 70 eV. In some embodiments, the ions provide energy in a range of about 45 eV to about 95 eV. In an embodiment, the second film has a thickness of greater than 10 microns. In some embodiments, the second film has a thickness in the range of about 10 to 20 microns. In some embodiments, the second film has a thickness in the range of about 1 to 5 microns.
• An electrolyte third film e.g., films 61, 61 C or 73, having ionic transport qualities but not being electrically conductive (an electrolyte) is deposited so as to completely overlay the second deposited film.
• the third film is deposited using a first deposition source and a secondary source supplying energetic ions to the growing film.
• the first deposition source is a physical vapor deposition source.
• the secondary source is an ion source with the capability of supplying energetic ions having energy greater than 5eV.
• the energy range is about 5eV to about 3,000eV. In some embodiments, the energy range of is about 5 eV to about l,000eV.
• the energy range in a further embodiment is about 10 eV to about 500 eV.
• the energy range in a further embodiment is about 30 eV to about 300 eV.
• the energy range is in the range of about 60eV to 150eV.
• the energy of the ions from the secondary source is about 140 eV.
• the ions provide energy of about 135 eV.
• the ions provide energy in a range of about 5 eV to about 100 eV.
• the energy range of is about 5 eV to about 1000 eV.
• the energy range in a further embodiment is about 50 eV to about 90 eV.
• the energy range in a further embodiment is about 55 eV to about 85 eV.
• the energy range in a further embodiment is about 60 eV to about 80 eV.
• the energy range in a further embodiment is about 65 eV to about 75 eV.
• the energy range in a further embodiment is about 10 eV to about 100 eV.
• the energy range in a further embodiment is about 10 eV to about 90 eV.
• the energy range in a further embodiment is about 30 eV to about 300 eV.
• the energy range is in the range of about 60 eV to 150 eV.
• the energy of the ions from the secondary source is about 70 eV.
• the ions provide energy in a range of about 45 eV to about 95 eV.
• the secondary source includes oxygen (e.g., O ) or nitrogen (e.g., N 2 ) gas.
• the secondary source gas in another embodiment, includes a noble gas, e.g., argon, xenon, helium, neon, and krypton.
• the secondary source gas in another embodiment, includes a hydrocarbon material such as a hydrocarbon precursor. Selection of the secondary source gas is based on the desired effect on the stoichiometry of the deposited film.
• the secondary source in some embodiments, provides a focused beam of energized ions.
• the secondary source in some embodiments, provides a non-focused beam of energized ions. It is desirable to make the electrolyte, third layer as thin as possible and prevent the cathode and anode layers from shorting.
• the third film has a thickness of less than 1 micron. In some embodiments, the third film has a thickness in of less than 5,000 Angstroms, hi another embodiment, the third film has a thickness of less than 1,000 Angstroms. In another embodiment, the third film has a range of about 10 Angstroms to about 100 Angstroms.
• the third film is deposited using a first source supplying energetic ions (5 to 3000 eV) to a material source (target) at an impingement angle of 15 to 70 degrees and a second source supplying energetic ions to the growing film.
• the first deposition source includes a beam of focused energetic ions from a source gas.
• the source gas includes one of the sources gases described herein.
• An anode, fourth film, e.g., film 65 or 75 includes from a lithium-intercalation material that is deposited on and overlays the third film but not contacting first film (barrier) or second film (cathode).
• the fourth film is deposited using a first deposition source simultaneously with a secondary source supplying energetic ions to the growing fourth film.
• first deposition source is a physical vapor deposition source.
• the secondary source is an ion source supplying energetic ions from a source gas that includes oxygen (e.g., O 2 ) or nitrogen (e.g., N 2 ).
• the source gas in another embodiment, includes a noble gas, e.g., argon, xenon, helium, neon, and krypton.
• the source gas in another embodiment, includes a hydrocarbon material such as a hydrocarbon precursor. Selection of the secondary source gas is based on the desired effect on the stoichiometry of the deposited film.
• the secondary source in some embodiments, provides a focused beam of energized ions.
• the secondary source in another embodiment, provides an unfocused beam of energized ions.
• the energized ions provide energy to the lithium-intercalation material in the range of about 5 eV to about 3000 eV. In some embodiments, the energy range of is about 5 eV to about 1000 eV.
• the energy range in a further embodiment is about 10 eV to about 500 eV.
• the energy range in a further embodiment is about 30 eV to about 300 eV.
• the energy range is in the range of about 60 eV to 150 eV.
• the energy range of the ions from the secondary source is about 140 eV.
• the fourth film has a thickness of greater than 10 microns. In some embodiments, the fourth film has a thickness in the range of about 10 to 40 microns.
• the fourth film is deposited by plasma decomposition of hydrocarbon pre-cursor(s) at the surface of the substrate thereby forming a lithium-intercalation anode.
• deposition is performed by plasma enhanced CVD using hydrocarbon precursors.
• the deposition includes dopants such as N 2 .
• a secondary source provides energized ions to assist in the deposition of the fourth film. The energized ions provide energy in the range as described herein. In some embodiments, the secondary source is the same as any described herein.
• the anode, fourth film is deposited by direct ion beam deposition of a lithium-intercalation material using hydrocarbon precursors.
• the first deposition source provides abeam of focused energetic ions (5 to 3000 eV) from a source gas hydrocarbon precursor directed at the target material.
• a secondary source supplies energetic ions to assist in growing the fourth film and is a secondary source as described herein.
• a contact, fifth film, e.g., film 65 or 77, which is electrically conductive and does not react with the fourth film is formed in contact with at least part of the fourth film.
• the fifth film does not contact the second film (cathode).
• the fifth film has a thickness of greater than 0.5 microns.
• the fifth film acts as an anode current collector for contact to external circuitry.
• a passivation, sixth film 79 which is electrically non-conductive and chemically inert, essentially overlays the energy-storage device as formed thus far, i.e., all the second, third, and fourth films, so that same are packaged and free from environmental contaminants that may react with these films and degrade performance of the energy-storage device. Environmental contaminants may include further fabrication materials for devices with the energy-storage device integrated therewith.
• the first and fifth contact films are partially exposed outside the sixth film for connection to circuitry outside the energy- storage device.
• the substrate 55, 309 or 709, on which the films described herein are deposited includes any material capable of supporting a thin film and being able to withstand the deposition process described herein.
• the substrate is formed of a material having a temperature at which it will begin to degrade due to thermal effects of less than 700 degrees Celsius.
• a further embodiment includes a substrate having such a temperature at which it experiences thermal degradation of less than or equal to about 300 degrees Celsius.
• Thermal degradation of the substrate includes loss of shape of the substrate, loss of sufficient rigidity to support an energy-storage device, chemical breakdown of the substrate, cross-linking of materials on the substrate and/or films, melting, and combustion.
• substrates include silicon wafers and silicon on insulator structures.
• Other examples of substrate materials include metals on which an insulator layer is formed prior to formation of the energy-storage device as described herein.
• the metal may act as a contact for the energy- storage device with insulator layers electrically separating the electrolyte film, the anode film and the anode contact from the metal substrate.
• insulator layers electrically separating the electrolyte film, the anode film and the anode contact from the metal substrate.
• the substrate 55, 309, or 709 has a form that is applicable to the type of apparatus used to fabricate the energy-storage device according to the teachings herein.
• One example of the substrate shape is a semiconductor wafer.
• Other forms of the substrate include elongate webs, weaves, foils, and sheets. It is within the scope of the present invention to provide a substrate having sufficient size on which a plurality of energy-storage devices and/or a plurality of energy conversion devices are fabricated.
• the substrate 55, 309, or 709 include a substrate that retains its support characteristics during an in situ temperature treatment.
• the substrate is placed in intimate contact with a thermally controlled surface, e.g., surface 715.
• the thermally controlled surface is a cooled surface such that heat associated with deposition of any of the films described herein are thermally balanced so as not to thermally degrade the substrate or any other structural element previously formed on the substrate.
• substrates having low thermal degradation temperatures such as low melting points or low combustion temperatures, are used as substrates in the present fabrication methods.
• substrates include ceramics, glasses, polymers, plastics and paper based materials.
• the substrate is a plastic or metal substrate on which a plurality of energy-storage devices is deposited.
• the substrate is then divided into separate dies having at least one energy-storage device thereon.
• the dies then can be worked, e.g., cold worked, into a desired shape as dictated by the energyrstorage device application.
• the substrate is made of a flexible material, e.g., substrate 709.
• the flexible substrate is formed into an elongate roll that is caused to pass over a curved object, which forces the material into intimate contact with the surface of the curved object.
• the curved object is a thermally controlled device (e.g., device 725 as shown in Fig. 7) to control the temperature of the substrate and balance the effect of heat generated on the substrate and films thereon during deposition.
• the object is hollow and sealed from the environment of the deposition vessel.
• the hollow space is filled with a coolant, e.g., cryogenic gas such as gas obtained from liquid N 2 or liquid helium, with the coolant being constantly replenished.
• the coolant is chilled water that is constantly being replenished.
• an electro-thermal cooling apparatus thermally controls the curved object.
• the curved object is a drum that is either stationary or rotatable, in the direction of substrate movement, about an axis.
• the substrate 55 or 309 is formed of a strip of rigid material.
• the rigid substrate is made to pass over a cooled, thermally controlled surface.
• a cooled surface examples of the cooled surface are described herein.
• One such example is a cooled surface that is cooled by the release of cryogenic fluid such as liquid N 2 or liquid helium into passages within the body of object having the surface but sealed from the environment of the deposition chamber.
• cryogenic fluid such as liquid N 2 or liquid helium
• Other coolant sources include chilled water, cryogenic gas, and electro-thermal devices.
• Figure 8 A shows a plan view of a starting substrate 810 of an embodiment that will have an integrated battery and device sharing a common terminal.
• Figure 8F shows an elevation view of the starting substrate of Figure 8A.
• Figure 8B shows a plan view of the substrate 810 of Figure 8 A after deposition of the integrated battery 820 and device 2430 sharing a common terminal.
• integrated battery 820 and device 2430 are a thin-film battery and a circuit, respectively, having electrical connections 2322, 2324, and 2431.
• Figure 8G shows an elevation view of the partially built device of Figure 8B.
• Figure 8C shows a plan view of the substrate of Figure 8B after placing and wiring a separately fabricated chip 2440 connected by wires 2441, 2442, and 2443 to the integrated battery 2320 and device 2430 sharing common terminal 2324.
• Figure 8H shows an elevation view of the partially built device of Figure 8C.
• Figure 8D shows a plan view of the substrate 810 of Figure 8C after placing and wiring a loop antenna 850 used in some embodiments.
• Figure 81 shows an elevation view of the partially built device of Figure 8D.
• Figure 8E shows a plan view of the final device 800 having the partially built device of Figure 8D after a top encapsulation layer 860 has been deposited.
• device 800 includes embossed and/or printed matter 880, and/or a magnetically readable strip 870.
• Figure 8J shows a cross-section elevation view of the device 800 of Figure 8E.
• the elevational views of Figures 8E-8J are not to scale, hi some embodiments, device 800 is approximately the size and thickness of a common credit card.
• a magnetic strip 870 and raised lettering 880 are also fabricated on device 800.
• Figure 8K shows a perspective view of the device of Figure 8E at a magnetizing station.
• coil 890 uses house current to generate a 60 Hz magnetic field, and together with coil 850, form a transformer inducing current flow in coil 850 (not labeled), which is rectified and used to enable closing of a switch. When the switch is closed, an attached circuit performs a task.
• magnetic stations are used to disable anti-theft circuits.
• the magnetic field essentially disables a resonant frequency antenna of the anti-theft device so that as the purchaser walks through a reader at a retail establishment, the antenna will not enable an alarm.
• the magnetic field used to disable the anti-theft device enables a switch that in turn powers a circuit.
• the circuit begins a clock marking the beginning of a warranty period associated with a product purchased.
• Figure 8L shows a perspective view of a device 800 of Figure 8E, but further including a photovoltaic cell 2650.
• device 800 is fabricated as part of a shipping label.
• the shipping label includes an opaque peel off backing. Once peeled, light strikes the photo voltage cell and closes a switch to power a circuit.
• the circuit begins a clock marking the begmning of a warranty period associated with a product purchased.
• Figure 8M shows a schematic of the device of FIG. 8E at a radio-wave station 892. Radio waves from radio-wave station 892 are picked up by antenna 850, and the received radio wave's power is scavenged to close a switch and implement in circuit 2440. In some embodiments, the circuit begins a clock marking the beginning of a warranty period associated with a product purchased.
• Solid-state rechargeable batteries such as those described above have the unique ability of being integrated directly with the electronics they will power. Further integration of thin- wire antenna/coil 850 to be used as one of the coils of a two-part transformer such as shown in Figure 8K and or RF-scavenging technology such as that used in keyless entry systems allows the recharging of the solid-state thin-film battery 820 wirelessly (through the air). Using techniques already common in RF I.D. tagging, the communicated energy is converted into a D.C. voltage and used to perform functions on board. In the case where a battery already exists on board, the D.C. voltage is used to power up recharge circuitry to wirelessly recharge the on-board battery.
• the present invention provides a platform integrating electronics, solid-state batteries, and an event-actuated switch in a single platform.
• the system or platform has a very small form factor.
• Figures 9A to 20 show schematics of such systems or platforms. Discussions of specific examples follow.
• FIGs 9A and 9B show a schematic diagram of a system 900 including a battery 908, a circuit 910, and an activity-activated switch 930.
• the battery 908 is formed or may be formed as discussed with respect to Figures 1 A - 8M.
• the battery 908 is typically a thin-film battery formed on a substrate, such as substrate 55 shown in Figures 1 A - ID.
• the circuit may be incorporated and attached to the battery 908 on the substrate 55.
• the circuit 910 may be formed upon a substrate 55 and the battery 908 formed atop the circuit 910.
• An activity-activated switch 930 (such as a MEMS switch activated by acceleration, magnetism, electrostatic charge, etc., such as described below) is also formed on the substrate along with the battery 908 and the circuit 910.
• Figure 9 A shows a system 900 or a platform that integrates electronics in the form of a circuit 910, a solid-state battery 908, and an event-activated switch 930, wherein the event-activated switch is deactivated or open.
• Figure 9B shows the same system 900 or platform wherein the switch 930 has been activated placing the solid-state battery in electrical communication with the circuit or electronics 910. The circuit 910 or electronics are then powered to perform certain tasks in response to being activated by the activity-activated switch 930.
• Figure 9C shows a system 900 or a platform that includes a battery 908, a circuit 910, and an activity-activated switch 930.
• the circuit or electronics 910 include additional devices such as solid-state memory 912 and/or a timing circuit 914.
• the platform 900 including the battery 908, circuit or electronics 910, and the activity-activated circuit 930 is in a deactivated state.
• the platform 900 shown in Figures 9C and 9D is in a deactivated state or with the switch or activity-activated switch 930 shown as open for merely illustrative purposes. It should be noted that the platform could also be shown in the activated state with the activity-activated switch 930 closed.
• the memory 912 as shown is typically a static non- volatile (NV) memory. NV memory stores information whether the circuit 910 is powered or unpowered. In other words, using NV memory 912 and the timing circuit 914, it is possible to record the times of . certain events within the memory 912 during the time frame in which the battery 908 is capable of powering the circuit 910.
• shock events or the time at which the activity-activated circuit 930 was closed or placed into an active state could be recorded within the memory 912.
• the timing circuit 914 includes a timer to be used to record the date and time or merely the time at which a particular activity that activated the switch 930 occurred.
• Figure 9D shows yet another system 900 or platform that includes the battery 908, the circuit 910, and the activity-activated switch 930 in an open or deactivated position.
• the circuit 910 includes a memory 912, a timer 914, and a microprocessor 916.
• the activity-activated switch 930 could be activated and the timer 914 could record the date and time of activation within the NV memory 912.
• the microprocessor 916 could carry out specific functions. In some instances, the microprocessor 916 could have very specific and limited tasks and may be termed a microcontroller since it would have dedicated and specific tasks to perform. It should be noted that the solid-state battery 908 shown in Figures 9A, 9B, 9C, and 9D could merely be a one-time use battery or could be formed to be recharged over time. The battery 908 could be recharged using a photovoltaic cell and exposing the platform to light, or could be recharged using periodic bursts of radio frequencies, or by any other similar means.
• FIG. 10 shows a flow chart of the method of operation for the circuits shown in Figures
• the platform or system 900 that includes the battery 908, the circuit 910, and the activity-activated switch 930 is initially in a deactivated state, ⁇ s depicted by reference numeral 1010.
• the deactivated state is when the switch 930 is in an open position.
• the deactivated state is when the activity-activated switch is in a closed position.
• an activation action 1020 takes place. The activation action generally closes the activity-activated switch 930 and places the battery and electrical communication with the circuit or electronics 910.
• the activity-activated switch closes and the battery 908 now powers the circuit 910.
• the circuit 910 or electronics 910 operate or are placed in operation 1030.
• the operation 1030 can include storing events in memory 912 at particular times according to a timing circuit 914 (shown in Figures 9 A - 9D).
• the operation can include specific tasks to be performed by the microprocessor or microcontroller 916 (shown in Figure 9D).
• Figure 11 shows an alternative embodiment of the invention.
• a battery 1110 and an activity-activated switch 1130 are included in this particular embodiment.
• the battery 1110 is a thin-filmed battery such as shown and formed in Figures 1-8, and the activity- activated switch 1130 is attached to (or integrated within) the battery 1110.
• the activity- activated switch 1130 can be formed as part of the thin-film battery or more accurately stated, can be formed along with the battery 1110 on a substrate 55.
• a circuit, or other electronics, is not on the substrate 55, but is later connected to a contact 1141 and 1142.
• electronics or circuitry remote from a thin-film, solid-state battery 1110 and a activity-activated switch 1130, which both reside on a substrate 55 can be connected to any form of electronics that are not resident on the substrate.
• Figures 12A and 12B show one type of activity-activated switch that can be used in the devices of Figures 9A-9D and other suitable devices.
• the activity-activated switch shown in Figures 12A and 12B is a MEMS device.
• Figure 12A shows a top view of MEMS activity- activated switch 1230, while the Figure 12B shows an elevational view or end view of the MEMS, activity-activated switch 1230.
• the activity-activated switch 1230 includes abase
• first (long) cantilevered beam 1210 Attached to the base 1201 is a first (long) cantilevered beam 1210, a second (intermediate length) cantilevered beam 1212, and a third (short) cantilevered beam 1214.
• a weight or weighted end 1211 On the end of the first cantilevered beam is a weight or weighted end 1211.
• a weighted end 1213 On the end of the second cantilevered beam 1212 is a weighted end 1213 and on the end of the third cantilevered beam l 1214 is a cantilevered end 1215.
• the end of each cantilevered beam also includes electrical contact material.
• the cantilevered beam is capable of conducting electricity along an electrical path or electrical trace.
• the first cantilevered beam 1210 has an electrical trace 1240 that ends in a contact or pad area 1241.
• the second cantilevered beam 1212 includes an electrical trace 1242 that ends in electrical pad or end 1243, while the third cantilevered beam 1214 includes an electrical trace 1244 ending in a pad or end 1245.
• the cantilevered beams 1210, 1212, and 1214 each have a different length. As a result, the amount of force necessary for the respective beam to bend will differ. In other words, the long cantilevered beam with a weighted end will bend and touch an electrical pad 1220 under a smaller shock load than the shock necessary to bend the cantilevered beam 1212 and place it into contact with electrical pad 1222.
• the third cantilevered beam 1214 is shorter than either of the cantilevered beams 1210, or 1212.
• the activity-activated switch 1230 (shown in Figures 12A and 12B) is basically a three-level switch that activates at varying levels of shock.
• each of the cantilevered beams could be made the same length and the weight at the end of the cantilevered beam could be varied so that the larger weight would be more responsive to lower shock loads while the lighter weight beam would be responsive to only a larger shock load.
• the invention of this activity-activated switch is not necessarily limited to a three- cantilever beam configuration.
• Figure 13 shows another embodiment of the activity-activated switch 1330.
• the activity-activated switch 1330 actually includes a separate switch for X-axis, Y-axis, and Z-axis activation.
• the Z-axis switch 1330A is a MEMS device that includes three cantilevered beams having substantially equal lengths and weighted ends 1311, 1313, and 1315, respectively. The weights on each of the ends 1311, 1313, and 1315 are substantially the same.
• each of the cantilevered beams 1310, 1312, and 1314 is changed so that the width of the first cantilevered beam 1310 is slight and the width of the last cantilevered beam 1314 is more substantial with the width of the cantilevered beam 1312 being intermediate with the width of the beam 1310 and the width of the beam 1314.
• the ends of the cantilever beam make electrical contact with pads 1320, 1322, and 1324.
• Each of the beams has electrical traces so that when each of the switches is enabled due to a shock load the time of the event can be stored within a static memory.
• 1330A shows the activity-activated switch for the Z-axis.
• the system or platform or activity-activated switch 1330 also includes switches for the X direction, 1330Bj and a switch for the Y direction, 1330C. Each of these switches is similar and, therefore, only one of the switches 1330B will be described for the sake of simplicity.
• the activity- activated switch 1330B includes a set of cantilevered arms 1310', 1312', and 1314'. On the end of the cantilevered beam 1310 is a weight 1311', and on the end of the cantilevered beam 1312' is a weight 1313', and on the end of the beam 1314' is a weight 1315'.
• a set of contacts is attached to the base of the activity-activated switch 1330B.
• a switch 1320' is positioned to contact the end 1311' of the first cantilevered beam 1310'.
• a contact 1322' is positioned to receive or contact the end 1313' of the second cantilevered beam 1312'.
• contact 1324' is positioned to receive the end 1315' of the cantilevered beam 1314'.
• the activity-activated switch 1330B is designed to have each one of the switches activate upon a different or closed upon at a different level of shock loading.
• the cantilevered arms 1310', 1312', and 1314' can either be made more substantial or the weights at the ends can be changed or the lengths can be changed to make the various portions of the switch actuatable at different shock loads.
• the activity-activated switch 1330B is a slightly different variation of the MEMS device shown in Figure 1330A.
• the switch 1330B is also a MEMS device.
• a similar switch 1330C is positioned to detect shock loads in the Y direction. It should be noted that with a shock-load-activated switch in each of the X-, Y-, and Z-axis prevents a shock that happens in some axis from being undetected. It should be noted that various components of a shock load would be felt in the X axis, Y axis, and Z axis.
• Figure 20 shows another embodiment of a system 2000 that includes a battery 2008, a circuit 2010, and an activity-activated switch 2030.
• the battery 2008, the circuit 2010, and the activity-activated switch 2030 are located on a substrate 2001.
• the substrate includes an adhesive material 56.
• Backing 156 covers the adhesive material 56.
• the backing 156 in some embodiments, is a removable peel-away paper or plastic film that can be removed to expose the adhesive 56.
• the activity-activated switch 2030 includes a first cantilevered bar 2031 and a second cantilevered bar 2032.
• the first cantilevered bar 2031 is positioned between a first contact 2033, a second contact 2034, and a third contact 2035.
• the contacts 2033 and 2034 are L-shaped and include a portion positioned in a plane parallel to the substrate that also substantially includes a portion of the cantilevered arm 2031. Therefore, accelerations in the plane of the substrate in either an X or a Y direction that are at a selected level cause the cantilevered arm 2031 to contact either electrical contact 2033 or electrical contact 2034.
• the electrical contact 2035 is positioned below the cantilevered arm or in a plane parallel to the end of the cantilevered arm 2031. Accelerations in a Z direction cause the arm 2031 to contact or connect to the contact 2035. Accelerations that cause the beam to deflect away from the contact 2035 still electrically connect to the contact 2035 when the beam travels in the other direction after the initial acceleration.
• a cantilevered beam 2032 is positioned between a contact 2036 and another contact 2037.
• the contacts 2036 and 2037 are L-shaped and include a portion located in a plane substantially parallel to the plane of the substrate 2001.
• the end of the cantilevered beam 2032 is also in the same plane, h some embodiments, the cantilevered arms 2031 and 2032 are formed equally so that a selected acceleration level in certain planes will result in electrical contact or connection to the various contacts.
• the cantilevered beam 2031 and the cantilevered beam 2032 are formed to have different response characteristics to accelerations so that one of the cantilevered beam contact elements 2031, 2032 might be more sensitive in terms of response to accelerations than the other of the cantilevered-beam contact elements.
• the battery activates the circuit 2010.
• the circuit 2010 carries out a specific function or functions.
• such a switch or switches may be used to detect shock loads and record their times.
• a set of switches or an activity-activated switch 1330, 1230, 2030 is useful in some shipping situations.
• a shipper may include an activity-activated switch that has a very low threshold of shock load to initially activate one of the more responsive portions of the activity-activated switch.
• the shipper may have a switch that activates upon taking the package from the shelf, which would be activated by a very low shock load. This activity could then be noted by a timer or timing circuit 914, and then placed in memory 912. If the package was dropped or otherwise severely shock loaded during shipment or at another time after shipment, another of the cantilevered beams would come in contact with its respective contact point.
• a large shock event would be noted by one of the shorter or less responsive beams.
• at least two of the beams would make contact with their respective contacts or possibly all three within an activity-activated switch.
• This time could then also be noted and could be determinative of who pays for a broken product that is shipped.
• the shipper should pay. If it can be shown that it was delivered, then the consumer should pay for the damaged product or the manufacturer or the shipper should not have to pay for damage to the product.
• Another example or use of this particular activity-activated switch for shock loading could be marking the time of the beginning of a warranty period.
• a clock or timer could be started based on activation of that switch that marks the beginning of a warranty or other time frame. At a later time when a consumer sought the warranty use, the requirement could be that the package is returned along with the product. The time of the warranty could then be checked. This would prevent consumers from ordering another product and returning it as a new product under a warranty.
• the system which includes a shock-load-activated switch 1330 or 1230 or 2030, could be included in a peel-off label or a shipping label that could be either attached directly to the product or directly to a package for the product.
• Figures 14A and 14B show two particular labels that use a system including the shock-load-activated switch, such as 1230, 1330, or 2030 (the switch is not shown in Figures 14A or 14B).
• the shock-load-activated switches 1230, 1330, and 2030 might also be termed accelerometers.
• a system which includes a battery, a thin film, a solid-state battery, an accelerometer or shock-load-activated switch 1230, 1330, 2030 and circuitry or electronics 910 could be formed as part of a label such as the shipping label shown in Figure 14A or the product label shown in Figure 14B.
• Each of the labels includes a platform or system 1410, 1410' that includes a thin film, solid-state battery 908 (shown in Figures 9 A and 9B), a circuit 910 (shown in Figures 9 A and 9B), and an activity-activated switch 930 (shown in Figures 9 A and 9B).
• Figure 15 shows a bullet or other ordinance 1500 that includes a platform or system 1520 which has a battery 908, a circuit 910, and an activity- activated switch 930 (shown in Figures 9A and 9B), such as switch 1230 or 1330 or 2030 (not shown in Figure 15).
• Figure 15 includes a bullet or ordinance 1510. Housed within the bullet or ordinance is a system or platform which includes a battery 908, a circuit 910 (shown in Figures 9A and 9B), and activity-activated switch or accelerometer 1230 or 1330 or 2030 (not shown in Figure 15).
• the circuit 910 could include a microprocessor or microcontroller 916 (shown in Figures 9 A and 9B).
• the bullet or ordinance 1510 also includes a fin or fins such as the ones shown carrying the reference numeral 1512.
• the fin 1512 is controllable.
• the activity-activated switch takes the system 1520 from a deactivated state into an activated state.
• the fin or fins 1512 can then be controlled by a microprocessor or microcontroller within the system 1520 to direct the ordinance toward a target.
• the circuitry or electronics 910 attached to the battery 908 and the activity-activated switch 930 could include an additional sensor 1530.
• the sensor 1530 could be an infrared sensor for detecting heat or could be a photovoltaic unit for detecting light or some other sensor for detecting another characteristic of a target.
• the bullet or ordinance 1510 having a system 1520 can be of very small size, including ordinance fired from a rifle or hand gun, or very large size shot from artillery.
• Figure 16A shows a top view of a magnetically actuated activity-actuated switch 1630.
• Figure 16B shows another embodiment of a magnetically actuated switch.
• the switch 1630 or switch 1630' is a MEMS device having a series of cantilevered beams 1610, 1612, 1614.
• the MEMS devices have a paramagnetic end that is responsive to a magnetic field.
• the beam 1610, 1612, 1614 have different cross-sectional widths so that they will respond differently to a magnetic field of a specific strength.
• the magnetic switch shown in Figure 16B includes a cantilever beam 1610', 1612', and 1614'. These cantilevered beams or arms are also responsive to differing magnetic fields.
• the arms 1610, 1612, 1614 make contact with electrical contacts 1620, 1622, and 1624. Once one of the arms 1610, 1612, 1614, 1610', 1612', or 1614' contacts an electrical contact 1620, 1622, 1624, 1620', 1622', or 1624' in an electrical field, a battery under it is connected to a circuit 910 as shown in Figure 9B.
• This particular activity-activated switch 1630, 1630' is useful for starting a warranty period or for recording the beginning of a warranty period.
• a magnetic device when a consumer buys an item at a retail establishment, frequently a magnetic device is used to remove an anti-theft mechanism.
• a magnetic device produces a magnetic field that deactivates the anti-theft device.
• the same magnetic field could be used to activate one or several of the arms 1610, 1612, 1614, 1610', 1612', or 1614' shown in Figures 16A or 16B.
• the same magnetic field used to deactivate the anti-theft device can be used to activate or begin a warranty time.
• Another potential use is that the item or device within a package, that has just been purchased and has had the anti-theft device magnetically deactivated, is that the magnetic sensor 1630, 1630' trigger a self-test of the product or item just purchased.
• Figure 17 is another embodiment of an activity-activated switch 930.
• Figure 17 shows a schematic representation of a pressure-sensitive switch 1730.
• the pressure-sensitive switch 1730 includes a first elongated electrical contact 1710 and a second elongated electrical contact 1712.
• the first electrical contact 1710 is separated from the second electrical contact 1712.
• Pressure-sensitive switch 1730 can be placed in a label such as the label shown in Figure 14A or 14B. The.
• the label could be provided with a peel-off back and the mere act of peeling off the backing that requires a flexing or curving of the main label could be the activity that places the first contact 1710 in connection with the second contact 1712 of the pressure-sensitive switch 1730.
• the activity-activated switch that is pressure sensitive could be used in a shipping application or for warranty work. Examples of these applications have been discussed above with respect to the activity-activated switches 1230 and 1330.
• FIG. 18 shows a schematic of a moisture-activated activity switch 1830 of some embodiments.
• the moisture-activated switch 1830 includes a first incline surface 1801 and a second incline surface 1802.
• a first electrical contact 1810 is attached or associated with the first incline surface 1801, and a second electrical contact 1812 is attached or associated with the second incline surface 1802.
• the incline surfaces move the moisture to the lowest possible point, provided that the moisture-activated switch 1830 is positioned so that gravity acts to move the moisture on the incline surfaces 1801, 1802 to the lowest possible point.
• the moisture collects in a reservoir 1820.
• the reservoir 1820 fills with moisture until the moisture in the reservoir 1820 bridges the gap between the first electrical contact 1810 and the second electrical contact 1812.
• the switch could be activated upon rain being received in a region, or it could be activated upon submersion of a device within a moist or wet environment. Still further, dew collected on the incline surfaces 1801 and 1802 could provide the moisture to fill the reservoir 1820 to a level where the first electrical contact 1810 is placed in electrical communication with the second electrical contact 1812.
• Such a switch could be used to place a battery 908 in communication with a circuit or electronics 910 (see Figures 9 A and 9B) at a time when sufficient moisture closes or provides electrical contact through the switch 1830.
• a heat-activated activity switch 930 is used.
• the structure would be similar to the structure needed for a sprinkler system within a building.
• the heat-activated switch would place a battery 908 into communication with a circuit 910 or electronics 910.
• An example application would be used in a sprinkler system whereby the sprinkler, after being enabled, would be disabled when smoke was no longer detected or the temperature within a room went below a certain threshold level.
• an activity-activated switch 930 would be to use the acceleration-activated type switches 1230, 1330 in the ejection seat in planes for test pilots. Many times test pilots are flying airplanes at very high elevation and if an ejection is necessary at one of these high elevations, it is necessary for the parachute not to open until the pilot within the seat is at an elevation where they have sufficient oxygen to survive. In other words, if flying at a high elevation and the ejection seat is necessary to be deployed, it is advantageous, and even life saving, for the pilot to drop through the higher elevation to an elevation where there is sufficient oxygen for the pilot to survive. Such an elevation may be anywhere from 10-15,000 feet or maybe at any other selected range.
• the activity-activated switch 1230, 1330 would power electronics or circuit 910 that would include an altimeter.
• the electronic would use the altimeter reading for determining when to deploy a parachute attached to the ejection seat. This would provide a better chance of survival for a pilot that would have to eject at high altitudes.
• Figure 19 shows an RF activated switch. It is contemplated that other applications would be available after an RF signal activates activity-activated switch 930, 1930.
• Figure 20 is described above.
• FIG. 21 A shows an embodiment of a wireless tagging system 2100.
• the system includes a Radio Frequency Identification (RFID) device 2170 and a remote RF device 2160 for communicating with the RFID device.
• RFID device 2170 includes a battery 2120 deposited on a flexible substrate 2110, electronic circuit 2130 placed on the battery 2120 and operatively coupled to the battery 2120 in order for the battery 2120 to provide power to the electronic circuit 2130, an RF antenna 2140 deposited on the battery 2120 and coupled to the electronic circuit 2130, and an adhesive layer 2150 deposited on the side of the flexible substrate that is opposite the battery 2120 and electronic circuit 2130 layer.
• wiring 2131 connects electronic circuit 2130 to battery 2120 and antenna 2140.
• a layer of wiring and contact is deposited between the battery 2120 and the electronic circuit 2130 to provide for coupling the electronic circuit 2130 to the battery 2120.
• the electronic circuit is formed as layers on the RFID device.
• the electronic circuit includes preformed (i.e., pre-built) integrated circuits mounted on the deposited layers and connected to the battery by the wiring layer.
• the RF antenna 2140 is deposited on the flexible substrate 2110.
• the RF antenna 2140 is deposited on the flexible substrate 2110, an electronic circuit 2130 is placed adjacent to the battery 2120 on the flexible substrate 2110, and adhesive layer 2150 is deposited on the side of the flexible substrate that is opposite the battery 2120 and electronic circuit 2130.
• electronic circuit 2130 is placed adjacent to the battery 2120 on the flexible substrate 2110 to form a uniform surface to allow adhesive layer 2150' to be deposited on the uniform surface formed by the battery 2120 and the electronic circuit 2130 or allow the adhesive layer 2150' to be formed on the flexible substrate 2110.
• the battery 2120 is deposited on a first side of the flexible substrate 2110 and the electronic circuit 2130 and RF antenna 2140 are placed on the opposite side of the flexible substrate 2110 to allow the adhesive layer 2150" to be deposited on either the electronic circuit 2130 or to allow the adhesive layer 2150" to be deposited the battery 2120.
• Figure 2 IF shows one embodiment of an adhesive 2150 placed on the flexible substrate 2110.
• the adhesive 2150 could be any type of adhesive including a releasable type of adhesive or a permanent adhesive.
• the adhesive layer 2150 in some embodiments, is a peel-and-stick type of adhesive covered by a peel-able paper (also called a release paper) or plastic layer 2152.
• the adhesive layer 2150 covers the entire substrate 2110 surface while in other embodiments the adhesive layer 2150 only covers a portion of the substrate surface 2110.
• the adhesive layer 2150 covers all or a portion of the battery 2120.
• the adhesive layer 2150 covers all or a portion of the electronic circuit.
• the adhesive layer 2150 covers all or a portion of a uniform surface formed by depositing the electronic circuit 2130 adjacent to the battery 2120.
• Figure 22 shows an embodiment of a battery 2220.
• a substrate 2210 is provided on which is formed a contact film 2257.
• Contact film 2257 acts as a current collector and is connected to a lead 2258, which, in some embodiments, connects one pole of the battery 2220 to an external circuit.
• the electronic circuit 2130 (shown in Figures 21 A- 2 IE) is attached to the battery 2220 as formed. In other embodiments, the electronic circuit 2130 may be remote from the battery 2220, for example, not attached to the battery 2220 as formed.
• An electrode film 2259 is formed on the contact film 2257.
• the electrode film 2259 substantially covers a surface of the contact film 2257 so as to minimize resistance by maximizing the area of the interface between the films.
• the electrode film 2259 is a cathode for a thin-film battery 2220.
• An electrolyte film 2261 is formed on the electrode film 2259.
• An electrode film 2263 is an anode formed on the electrolyte film 2261.
• the electrolyte film 2261 isolates electrode film 2259 from electrode film 2263.
• a contact film 2265 is formed on electrode film 2263. Contact film 2265 acts as a current collector and is connected to a lead 2267, which connects one pole of the battery 2220 to an external circuit.
• the contact film 2265 substantially covers a surface of the electrode film 2263 so as to minimize resistance by maximizing the area of the interface between these films.
• the electrode film 2263 is an anode for a thin-film battery.
• the electrolyte film 2261 includes LiPON.
• LiPON refers generally to lithium phosphorus oxynitride materials.
• Li 3 PO N Li 3 PO N.
• Other examples incorporate higher ratios of nitrogen in order to increase lithium ion mobility across the electrolyte.
• the solid-state battery 2220 is formed in five or six stages.
• a first stage begins with a pre-cleaning of the substrate using a Mk II Ion Gun system in an atmosphere of argon flowing through the ion gun at a rate of 5 seem for four minutes at 70V and 2 A.
• a 2500 A cathode metal layer of nickel is then formed on the substrate 2210 by depositing nickel with an electron beam gun using 200mA and 6500V.
• a second stage begins with a sputter etch of the nickel cathode collector for one minute at a power of 250W in argon at 12mT pressure followed by a target burn-in period of five minutes at a power of 1200W in an atmosphere of 80% oxygen and 20% argon ambient at 15mT.
• a cathode layer 2259 is then formed on the cathode metal layer by a deposition of LiCoO 2 at a power of 1200W for sixty minutes in an atmosphere of 80% oxygen and 20% argon at a pressure of 15mT.
• a third stage begins with a target burn-in period of five minutes at a power of 750W in nitrogen at a pressure of 5mT.
• An electrolyte layer 2261 is then formed by a deposition of Li 3 PO 4 at a power of 750W for fifty- seven minutes in an atmosphere of 40sccm of nitrogen at 5mT.
• an anode deposition stage is then performed to deposit an anode.
• a fourth stage begins with a pre- cleaning of the previously formed layers using a Mk II Ion Gun system in an atmosphere of argon flowing through the ion gun at a rate of 5sccm for four minutes at 70V and 2A.
• a 2500A anode metal layer of copper is then formed on the electrolyte layer by depositing copper with an electron beam using 150mA and 7600V.
• a fifth stage begins with a pre-cleaning of the previously formed layers using a Mk II Ion Gun system in an atmosphere of argon flowing through the ion gun at a rate of 5sccm for four minutes at 70V and 2A.
• a 5000A passivation layer of SiN is then formed with an electron beam gun using 150mA and 7600V while coincidentally bombarding the growing film with an Mk II Ion Gun system at 90V and 2A and a gas flow of 18 seem of nitrogen flowing through the gun.
• FIG 23 A shows a schematic diagram of an RFID device 2300 that includes a battery 2320, electronic circuit 2330, RF antenna 2340, and RF-activated switch 2350.
• the battery is typically a thin-film battery formed on a substrate 2110 as shown in Figures 21A-21F, and Figure 22.
• the circuit may be incorporated and attached to the battery 2320 on the substrate 2110.
• the electronic circuit 2330 may be formed or placed upon a substrate 2110 and the battery 2320 formed atop the electronic circuit 2330.
• An RF-activated switch 2350 is also formed on the substrate along with the battery 2320 and the electronic circuit 2330. RF energy received by RF antenna 2340 is detected and amplifier circuit 2352 captures the occurrence of the event.
• Switch 2354 is then closed, operatively coupling battery power to the electronic circuit 2330.
• Electronic circuit 2330 includes additional devices such as solid-state memory 2334, a timing circuit 2336, and a microprocessor 2332.
• the memory 2334 as shown is typically a non-volatile memory. Non-volatile memory stores information whether the electronic circuit 2330 is powered or unpowered. In other words, using non-volatile memory 2334 and the timing circuit 2336, it is possible to record the times of certain events within the memory 2334 during the time frame in which the battery 2320 is capable of powering the electronic circuit 2330. For example, in some instances, the time at which the RF-activated circuit 2350 was closed or placed into an active state could be recorded within the memory 2334.
• the timing circuit 2336 which would include a timer could be used to record the date and time or merely the time that an RF-related occurrence activated the switch 2350.
• the microprocessor 2332 could carry out specific functions. In some instances, the microprocessor 2332 could have very specific and limited tasks and may be termed a microcontroller since it would have dedicated and specific tasks to perform
• Figure 23B shows a schematic diagram of another embodiment of an RFID device 2301.
• RF energy is received by RF antenna 2340 and is detected by amplifier circuit 2352.
• LOW-POWER signal 2357 resets Flip-Flop 2356.
• the device operates as discussed above for Figure 23 A. It should be noted that the solid-state battery 2320 shown in Figures 23 A and 23B could merely be a one-time use battery or could be formed to be recharged over time.
• the battery 2320 could be recharged using a photovoltaic cell (optionally formed or deposited on the surface of a substrate) and exposing the platform to light, or could be recharged using periodic bursts of radio frequencies, or by any other similar means.
• a photovoltaic cell optionally formed or deposited on the surface of a substrate
• the use of rechargeable batteries is discussed in US Patent Application Serial Number 09/815,884 entitled “Battery-Operated Wireless- Communication Apparatus and Method” filed March 23, 2001, and in US Patent Application Serial Number 10/336,620 entitled “Solid State Activity- Activated Battery Device and Method” filed 2 January, 2003, which are co-owned by the applicant of this application and are incorporated herein by reference. Certain needs exist within industry that would benefit from the integration of energy, storage and electronics on a single platform.
• the present invention provides a device that integrates electronics (including RF electronics) and solid-state batteries in a single device.
• the system or platform has a very small form factor.
• Figures 21 A to 24B show exemplary sample schematics of such systems or platforms. Discussions of specific examples follow.
• this particular RFID device is marking the time of the beginning of a warranty period. For example, if the RFID device is attached to a product, RF energy could activate the device at the time a product is purchased, and a clock could be started to mark the beginning of the warranty or time frame. Alternatively, the RF energy would transmit a time stamp that is permanently stored in the device. This allows for very close proximity or a very close approximation of when the warranty period was started. At a later time when a consumer wished to return a product covered under a warranty, a requirement of the warranty could be that the package or label is returned along with the product. The time of the warranty could then be checked. This would prevent consumers from ordering another product and returning it as a new product underneath a warranty period.
• the system which includes, an RF-activated switch
• Figures 24A and 24B show two embodiments of using labels that use a system including RF-activated switch 2350.
• a system that includes a tliin-film solid-state battery 2320, an RF-activated switch 2350 and electronic circuit 2330 is, in some embodiments, formed as part of a label such as the shipping or mailing label shown in Figure 24A or the product label shown in Figure 24B.
• Each of the labels includes a platform or system 2410, 2410' that includes a thin-film solid-state battery 2320, an electronic circuit 2330, and an RF-activated switch 2350.
• Another example would be to use the RFID device in a mailing or shipping label 2410 (see Figure 24 A) for detecting and logging the time of shipping and delivery related events.
• An RF transmitting device would activate the RF-activated switch 2350 and start timing circuit 2336 to detect and log the beginning of the shipping duration.
• Another example or use of this particular RFID device includes use as a backup to, or supplement to, the information on the printed label. If the printed information becomes no longer readable, or unavailable due to loss, the RFID device could transmit stored information to an RF receiving device when prompted.
• RFID device in a product label 2410' (see Figure 24B) to tag and track property.
• Remote RF transmitting and receiving devices could be placed at various stations in a warehouse or shipping and receiving area. The remote RF devices then detect and log when a package passes the station.
• the RFID device is also used to locate property with a portable RF transmitting and receiving device.
• the remote RF device transmits an interrogation code for a particular RFID device. The RF energy from the interrogation would activate the RFID device, and the RFID device then analyzes the interrogation code and responds by transmitting the RFID identification code, thereby indicating the presence of the particular RFID device to the remote RF device.
• Another example is to use the RFID device in a drug treatment system that uses drug patches adhered to the skin to deliver drugs by a method such as iontophoresis.
• a thin- film solid-state battery allows electronic circuits to be used in the iontophoretic device while maintaining a low device-profile so as to not interfere with a patient's clothing.
• the RFID device is attached to a drug patch that contains a drug reservoir.
• the electronic circuit 2330 activates the device to begin a delivery of a bolus of drug.
• Microprocessor 2332 stores information in memory 2334 such as when the device was activated, when a bolus of drug was delivered, and how many boluses were delivered.
• Timing circuit 2336 is optionally used to prevent the patient or caregiver from administering doses too often.
• a caregiver optionally uses the remote RF device to transmit RF energy to initiate a delivery of a bolus of drug, or to interrogate the RFID device to determine the history of drug therapy provided by the device.
• the RFID device is activated when the RF device activates an RF-actuated switch. In other embodiments, the RFID device is switch-activated when the RFID portion of the device is attached to the drug reservoir portion of the device.
• FIG 25A shows one embodiment of a method 2500 of using an RFID device.
• the method 2500 includes providing 2510 a flexible peel-and-stick RFID device 2100 that includes a multi-bit identifier value and a thin-film battery deposited on a flexible substrate, pressure- adhering 2520 the RFID device 2100 to an article, receiving 2530 RF energy at the RFID device, and based on the reception of the RF energy, coupling 2540 battery power to the RFID device 2170 (shown in Figure 21A) to activate circuitry, where the activation initiates 2550 a task in the RFID device 2170 that includes transmitting an identifier (ID) value based on the multi-bit identifier of the RFID device 2170.
• ID identifier
• the task is storing 2551 a start time for an activity in the RFID device 2170.
• the task is running 2552 a self-check in the RFID device 2170 and storing 2553 the result of the self-check.
• the RFID device 2170 receives 2554 an interrogation code from a remote RF transmitter device 2160 and performs 2555 an analysis of the interrogation code, and transmits 2556 the ID value to a remote RF receiver device 2160 based upon the analysis of the interrogation code.
• receiving an interrogation code from the remote device causes the RFID device 2170 to store 2557 a timestamp for an event.
• the RFID device 2170 stores 2557 a first timestamp to mark a shipping event and stores 2558 a second timestamp to mark a receiving event, and then compares 2559 the stored timestamps to determine the duration of shipping related events.
• Another method, shown in Figure 26A, includes forming an RFID device 2170.
• One embodiment of the method 2600 includes providing 2610 a flexible substrate, depositing 2620 a battery that includes an anode, a cathode, and an electrolyte separating the anode and cathode, depositing 2630 a wiring layer, placing 2640 electronic circuit on the battery that is connected to the battery, depositing 2650 a pressure sensitive adhesive to allow peel-and-stick applications, and covering 2660 the RFID device.
• Some embodiments include performing these processes in the order shown in Figure 26, while other embodiments combine one or more processes as a single operation, or perform the processes in a different order, resulting in a different order of layers.
• One embodiment includes arranging the elements of the RFID device as (i) the cover, (ii) the electronic circuit, (iii) the wiring layer, (iv) the battery, (v) the substrate, and (vi) the pressure sensitive adhesive.
• the method 2600 includes forming 2670 a printed label onto the RFID device.
• the battery is deposited 2620 on the substrate using an ion assist energy between about 50eV to about 95eV.
• the battery is deposited on the substrate using ion assist energy between 70eV to 90eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 65eV to 70eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 70eV to 75eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 75 eV to 80eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 80eV to 85eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 85eV to 90eV.
• the battery is deposited on the substrate using ion assist energy between 90eV to 95 eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 65eV to 95eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 65eV to 85eV. In other embodiments, the battery is deposited on the substrate using ion assist energy between 65 eV to 75eV. In other embodiments, one or both of the endpoints of the above ranges is approximate. In other embodiments, the battery is deposited on the substrate using ion assist energy of about 65 eV. h other embodiments, the battery is deposited on the substrate using ion assist energy of about 70eV.
• the battery deposited on the flexible substrate is a rechargeable battery.
• Another aspect of the invention provides a flexible peel-and-stick battery-operated device.
• Some embodiments of the device 2170 are shown in Figures 21 A-21F and include a flexible substrate 2110, a tbin-film battery 2120 deposited on the flexible substrate 2110, an electronic circuit 2130 deposited on the battery 2120 and coupled to the battery 2120 to provide power to the electronic circuit 2130, a Radio-Frequency (RF) antenna 2140 coupled to the electronic circuit 2130, and an adhesive 2150 applied to the flexible substrate 2110.
• the order of the layers is different from that shown in Figure 26; for example, the electronic circuit is, in some embodiments, placed on the substrate beside or beneath the battery layers.
• the electronic circuit 2130 includes an RF-enabled switch that electrically activates the electronic circuit 2130.
• the RF- enabled switch includes a MEMs device.
• the RF antenna 2140 of the device is integrated into the substrate 2110.
• the battery 2120 of the device is a rechargeable battery.
• One aspect of forming the RFID devices as shown in Figure 27 includes a rolled release layer 2710 having releasably affixed thereon a plurality of the RFID devices 2770.
• the system 2800 includes one or more supply reels 2810 that feed one or more source substrates 2809, one or more supply reels 2810 that feed one or more electronic circuits and an RF antenna, one or more deposition stations 2811 that deposit layers onto the one or more substrates, a supply reel 2827 that feeds a peel-and-stick adhesive for attachment to the substrate, and a vacuum chamber 2807 that contains the supply reels ,2810, the deposition station 2811, and assist source 2817.
• the layers deposited in the system include layers to form a battery, and a wiring layer to couple the battery to the electronic circuit and to couple the RF antenna to the electronic circuit.
• the layers deposited to form a battery include (a) a cathode layer, (b) an electrolyte layer, and (c) an anode layer.
• the substrates are fed over an arched thermal surface 2815 and taken up by an end roll 2813.
• the first material deposition station 2811 produces a beam of adatoms 2812 to be deposited on substrates 2809. Beam 2812 is focused on a location 2819 on substrates 2809 to form a layer of a battery.
• An assist source 2817 produces a beam of energized particles 2814 directed at the substrate 2809.
• the energized particle beam 2814 provides the energy required to control growth and stoichiometry of the deposited material of the first beam 2812.
• the substrate 2809 includes an elastomer, polymer, paper and or plastic web or sheet on which the energy-storage device is fabricated.
• Substrate 2809 being elongate, allows a plurality of energy-storage devices to be deposited on successive locations of the substrate, thereby improving the rate of energy device production.
• a plurality of deposition stations 2811 are provided to simultaneously deposit a plurality of films at different locations on the substrate 2809.
• the deposition of the electrolyte film includes directing an electrolyte material to a location at least partially in contact with the cathode film, while simultaneously supplying energy to the electrolyte material.
• the energy is supplied by energized particles.
• the energized particles are energized ions.
• the energized particles from the assist source are of a different material than the electrolyte material, such as, for example, an inert gas.
• the energized ions react with other components of the deposition to become part of the deposited layer.
• the energized particles supply energy to the electrolyte first material to assist in the growth of a desirable, solid electrolyte-film structure. Moreover, this controls the stoichiometry of the growing electrolyte film.
• the first material deposition station 2811 provides Li 3 PO 4 in a nitrogen atmosphere.
• the first source 2811 provides Li 3 PO in a vacuum environment wherein the background pressure is less than about 0.001 Torr.
• the assist source 2817, or second source provides energized particles from a source gas.
• the secondary source 2817 is an ion source supplying energetic ions from a source gas including oxygen (e.g., O 2 ) and/or nitrogen (e.g., N 2 ).
• the source gas in other embodiments, comprises a noble gas, e.g., argon, xenon, helium, neon, and/or krypton.
• the energized particles and/or ions increase the energy of the material forming the electrolyte film 2261 of the battery in Figure 22, thus enhancing layer-by-layer growth. Accordingly, the electrolyte film is of a higher quality than conventional electrolyte layers.
• An embodiment for forming a LiPON electrolyte film 2261 includes the first source providing Li 3 PO at or to the location where the LiPON electrolyte film is to be formed and second source providing energized nitrogen particles to or near the same location.
• the energized nitrogen particles react with Li 3 PO 4 provided at the location for forming the electrolyte film. This increases the amount of nitrogen in the LiPON electrolyte film.
• Increasing the nitrogen content is desirable, in some embodiments, to increase lithium ion mobility across the electrolyte.
• the chamber in which the substrate 2809 is positioned has a nitrogen-enhanced atmosphere.
• a LiPON electrolyte film is formed by the Li 3 PO 4 supplied by the first source reacting with the nitrogen in the chamber.
• the second source provides energized particles assisting in the formation of the electrolyte film.
• the second source also provides nitrogen to the Li 3 PO 4 at the location.
• the Li 3 PO 4 reacts with both the nitrogen in the chamber and with energized, nitrogen-containing particles supplied by the second source. This increases the nitrogen content of the electrolyte film 2261.
• increasing the nitrogen content in the electrolyte film 2261 is desirable since published data from the Department of Energy lab at Oak Ridge, Tennessee indicates an increase in nitrogen content increases the ion conductivity or mobility in the electrolyte film.
• the crystalline structure of a thin film formed according to the teachings herein has a higher order than those achieved by conventional cathode film forming techniques.
• a highly ordered crystalline cathode film is desirably achieved according to the teachings described herein by providing the required energy to form the desired, high-order and appropriately oriented crystal structure without subjecting the substrate, and other layers formed on the substrate including the cathode-contact film to a high- temperature anneal.
• each layer can be annealed using a different anneal process (such as using ion-assist beams having different energies for different layers, or depositing and annealing at different rates or for different durations). Further, by annealing the surface layer of the previous layer, a subsequent layer can be deposited onto a surface that has been ordered in a specific way (for example, to achieve a specific crystal orientation, or a specific ion-bonding surface) that enhances the quality of that subsequent layer.
• a different anneal process such as using ion-assist beams having different energies for different layers, or depositing and annealing at different rates or for different durations.
• the systems shown herein for depositing films are adaptable to form the electrolyte film 2261 according to the present invention. Examples of some such systems are shown in Figures 28 A - 29B.
• the thermal control surface 2815 is connected to a thermal source 2825, which controls the temperature of surface 2815.
• the substrate 2809 is in thermodynamic contact with surface 2815 for controlling the temperature of the substrate as needed for a particular deposition process on a particular substrate.
• the thermal source is a coolant source, for example a cryogenic vacuum pump that releases compressed helium toward the surface 2815 to cool it.
• vacuum chamber 2807 holds a plurality of supply reels 2810 to feed a plurality of substrates 2809 for attachment of peel-and-stick adhesive fed from supply reels 2827.
• the substrates are fed over an arched thermal surface 2815 and taken up by a plurality of end rolls 2813.
• the supply reels 2810 hold strips of different material.
• the supply reels 2810 hold strips one component wide. Providing multiple supply reels allows the tension and speed of each reel's substrate material to be individually controlled, as well as enabling multiple different component designs to be simultaneously loaded and processed.
• the thermal control surface 2815 and the thermal source 2825 are provided on a drum and the drum controls the rate of movement of the substrates under the deposition stations 2811 and assist source 2817.
• the plurality of substrates 2809 run in front of the deposition stations 2811 and assist sources 2817 at different speeds, thus allowing layers of differing thickness to be applied to different strips.
• the different speeds are achieved by providing multiple drums for controlling the speed of strips of substrate.
• Figure 29A shows another system 2900 for making an RFID device.
• the system 2900 includes one or more supply reels 2910 that feed one or more source substrates 2909, one or more deposition stations 2911 that deposit layers onto the one or more substrates, one or more assist sources 2917, one or more supply reels 2927 that feed one or masks 2933 for attachment to the one or more substrates, one or more end reels 2930 for taking up the mask 2933 after deposition, one or more end reels 2913 for taking up the formed devices after the substrates are fed over an arched thermal surface 2915, and a vacuum chamber 2907 that contains the supply reels 2910, 2927, the end reels 2930, 2913, the deposition stations 2911, and assist sources 2917.
• Figure 29B shows another view of the system 2900.
• a plurality of supply reels 2927 holding a plurality of masks 2933 would allow a plurality of components to be deposited onto a plurality of substrates 2909 in one system 2900.
• reel-to-reel masks the mask used at each station can be easily changed. For example, if four deposition stations are provided, a first set of four masks, each defining its own deposition pattern for each respective station is used at a first time. Later, the mask reel is moved and a second set of four masks is used. This allows the mask patterns to be changed for different devices being made, without having to open the deposition chamber.
• FIG. 28 Another embodiment of the system combines the systems shown in Figures 28 and 29 into one system that provides supply reels 2827, 2927 for applying both an adhesive layer and a mask layer to the source substrates 2909.
• a system 2100 such as shown in Figures 21A-21F, includes the RFID device 2170 in communication with a remote radio frequency (RF) transmitter and/or receiver 2160.
• the RFID device 2170 of the system 2100 includes a flexible substrate 2110, a thin-film battery 2120 deposited on the flexible substrate 2110, an electronic circuit 2130 placed on the battery 2120 and coupled to the battery 2120 to provide power, and a Radio Frequency (RF) antenna 2140 connected to the electronic circuit 2130.
• the battery 2120 of the RFID device 2170 is a rechargeable battery, and the battery 2120 is recharged when energy is transmitted from the remote device 2160.
• the RFID device includes an RF-activated switch.
• FIG. 22A An embodiment of the RFID device 2170 that includes an RF-activated switch is shown in Figure 22A.
• RF energy is received by the antenna 2240 and activates RF-activated switch 2250 that places the thin-film battery 2220 in communication with the electronic circuit 2230.
• the RF-activated switch 2250 activates the electronic circuit 2230 from a low-power sleep mode.
• the method 2500 includes providing 2510 a flexible peel-and-stick RFID device 2100 that includes a multi-bit identifier value and a thin-film battery deposited on a flexible substrate, pressure- adhering 2520 the RFID device 2100 to an article, receiving 2530 RF energy at the RFID device, and based on the reception of the RF energy, coupling 2540 battery power to the RFID device 2170 to activate circuitry, where the activation initiates 2550 a task in the RFID device 2170 that includes transmitting an identifier (ID) value based on the multi-bit identifier of the RFID device 2170.
• ID identifier
• the task is storing 2551 a start time for an activity in the RFID device 2170.
• the task is nmr ⁇ ng 2552 a self-check in the RFID device 2170 and storing 2553 the result of the self-check.
• the RFID device 2170 receives 2554 an interrogation code from a remote RF transmitter device 2160 and performs 2555 an analysis of the interrogation code, and transmits 2556 the ID value to a remote RF receiver device 2160 based upon the analysis of the interrogation code.
• receiving an interrogation code from the remote device causes the RFID device 2170 to store 2557 a timestamp for an event.
• the RFID device 2170 stores 2557 a first timestamp to mark a shipping event and stores 2558 a second timestamp to mark a receiving event, and then compares 2559 the stored timestamps to determine the duration of shipping related events.
• Another method such as shown in Figure 26 A, includes forming an RFID device 2170.
• One embodiment of the method 2600 includes providing 2610 a flexible substrate, depositing 2620 a battery that includes an anode, a cathode, and an electrolyte separating the anode and cathode, depositing 2630 a wiring layer, placing 2640 electronic circuitry on the battery that is connected to the battery, depositing 2650 a pressure sensitive adhesive to allow peel-and-stick applications, and covering 2660 the RFID device.
• One embodiment includes arranging the elements of the RFID device as (i) the cover, (ii) the electronic circuit, (iii) the wiring layer, (iv) the battery, (v) the substrate, and (vi) the pressure sensitive adhesive.
• the method 2600 includes forming 2670 a printed label onto the RFID device.
• the battery is deposited 2620 on the substrate using energy between about 50eV to about 95eV.
• the battery is deposited on the substrate using energy between 70eV to 90eV.
• the battery deposited on the flexible substrate is a rechargeable battery.
• An embodiment of the device 2170 such as shown in Figure 21A-21F, includes a flexible substrate 2110, a thin-film battery 2120 deposited on the flexible substrate 2110, an electronic circuit 2130 placed on the battery 2120 and coupled to the battery 2120 to provide power to the electronic circuit 2130, a Radio Frequency (RF) antenna 2140 coupled to the electronic circuit 2130, and an adhesive 2150 applied to the flexible substrate 2110.
• the electronic circuit 2130 includes an RF-enabled switch that electrically activates the electronic circuit 2130.
• the RF-enabled switch includes a MEMs device.
• the RF antenna 2140 of the device is integrated into the substrate 2110.
• the battery 2120 of the device is a rechargeable battery.
• One aspect of forming the RFID devices as shown in Figure 27 includes a rolled release layer 2710 having releasably affixed thereon a plurality of the RFID devices 2770.
• Another aspect of the invention, such as shown in Figure 28 A, provides a system for making an RFID device.
• the system includes one or more supply reels 2810 that feed one or more source substrates 2809, one or more supply reels 2810 that feed one or more electronic circuits and an RF antenna, one or more deposition stations 2811 that deposit layers onto the one or more substrates, a supply reel 2827 that feeds a peel-and-stick adhesive for attachment to the substrate with thermal source 2825, and a vacuum chamber 2807 that contains the supply reels 2810 and the deposition stations 2811.
• the layers deposited in the system include layers to form a battery, and a wiring layer to couple the battery to the electronic circuit layer and to couple the RF antenna to the electronic circuit.
• the layers deposited to form a battery include (a) a cathode layer, (b) an electrolyte layer, and (c) an anode layer.
• Some embodiments provide a system that includes a vacuum chamber, a plurality of pairs of source and take-up reels within the vacuum chamber, including a first source reel that supplies a first strip of substrate material and a first take-up reel, and a second source reel that supplies a first mask strip having a plurality of different masks and a second take-up reel, a first deposition station configured to deposit material onto the first strip of substrate running between the first source reel and the first take-up reel, as defined by the first mask strip running between the second source reel and the second take-up reel, and a controller operatively coupled to run the first strip of substrate between the first source reel and the first take-up reel at a first independent rate and tension, and to run the mask strip between the second source reel and the second take-up reel.
• Some embodiment further include a third source reel that supplies a second strip
• the first mask strip provides masking for both the first and second substrate strips.
• Some embodiment further include a fourth source reel that supplies a second mask strip having a plurality of different masks and a fourth take-up reel, a second deposition station configured to deposit material onto the second strip of substrate rurining between the third source reel and the third take-up reel, as defined by the second mask strip running between the fourth source reel and the fourth take-up reel; and wherein the controller is operatively coupled to run the second strip of substrate at a second independent rate and tension.
• the controller is operatively coupled to run the second mask strip at a rate and tension based on the second independent rate and tension.
• Other embodiments provide a method that includes supplying a first strip of subsfrate material through a deposition station, moving a first mask strip through the deposition station, depositing a first layer of material from the deposition station onto the first substrate material in a pattern defined by a first area of the first mask strip, and depositing a second layer of material from the deposition station onto the first substrate material in a pattern defined by a second area of the first mask strip.
• Some embodiment of this method further include supplying a second strip of substrate material through the deposition station, moving a second mask strip through the deposition station, depositing a first layer of material from the deposition station onto the second substrate material in a pattern defined by a first area of the second mask strip, and depositing a second layer of material from the deposition station onto the second substrate material in a pattern defined by a second area of the second mask strip.
• the first and second strips of substrate material are moved at different rates.
• the first and second strips of substrate material are moved at different tensions.
• Some embodiment of this method further include depositing an adhesive and a release layer onto the substrate.
• Some embodiment of this method further include adhering a pressure-sensitive adhesive layer to the substrate.
• Still other embodiments provide a method that includes providing a flexible substrate, depositing a battery, including depositing an anode, a cathode, and an electrolyte separating the anode and cathode each defined by a different mask area on a mask strip, depositing a wiring layer, placing an electronic circuit onto the deposited layers, wherein the electronic circuit is operatively connected to the battery by the wiring layer, depositing a pressure sensitive adhesive to allow peel-and-stick applications, and covering the device.
• a layer order arrangement of the elements of the RFID device includes the cover, the electronic circuit, the wiring layer, the battery, the substrate, and the pressure sensitive adhesive in this order.
• Some embodiment of this method further include forming a printed label on the device.
• the depositing of the battery on the flexible substrate includes using an energy between about 50eV and about 95eV.
• the depositing of the battery on the flexible substrate includes using an energy between 70eV and 90eV. In some embodiments, the battery deposited on the flexible substrate is rechargeable.
• Another aspect of the invention provides embodiments that include a plurality of layers wherein the layers are held to one another as a single package, wherein the layers include: a flexible substrate, an electronic circuit, a thin-film battery operatively coupled to the electronic circuit to provide power, a radio frequency (RF) antenna operatively coupled to the electronic circuit; and an adhesive layer.
• the layers include: a flexible substrate, an electronic circuit, a thin-film battery operatively coupled to the electronic circuit to provide power, a radio frequency (RF) antenna operatively coupled to the electronic circuit; and an adhesive layer.
• RF radio frequency
• the electronic circuit includes an RF-enabled switch that electrically activates the electronic circuit.
• the RF-enabled switch includes a MEMS device.
• the layers are stacked in the order the adhesive layer wherein the adhesive layer is pressure sensitive and covered by a peel-able release layer, the flexible substrate, the thin-film battery deposited on the flexible substrate, the wiring layer including an RF antenna deposited on the previous layers, and the electromc circuit including an RF-enabled switch deposited on the wiring layer.
• the RF antenna is integrated into the substrate.
• the battery is rechargeable.
• the invention includes a rolled release layer having releasably affixed thereon a plurality of any of the above devices.
• the adhesive layer is pressure sensitive adhesive and is covered by a peel-able release layer.
• the layers are stacked in an order from the group consisting of the adhesive layer, the substrate layer, the battery layer, the electronic circuit layer, and the RF antenna layer.
• the layers are stacked in an order from the group consisting of the substrate layer, the battery layer, a layer including the electronic circuit and the RF antenna, and the adhesive layer.
• the layers are stacked in an order from the group consisting of the substrate layer, a layer including a) the battery, b) the electronic circuit and c) the RF antenna, and the adhesive layer.
• Other embodiments include a system for making an RFID device, the system including one or more supply reels that feed one or more source substrates, one or more supply reels that feed one or more electronic circuits and an RF antenna, one or more deposition stations that deposit layers onto the one or more substrates, wherein the layers include, layers to form a solid- state lithium-based battery, the battery layers including a cathode layer, an electrolyte layer, an anode layer, a wiring layer to couple the battery to the electronic circuit layer, and to couple the RF antenna to the electromc circuit, a movable mask strip having a plurality of different mask areas used for different deposition operations, a supply reel that feeds a peel-and-stick adhesive layer, and a vacuum chamber that contains the supply reels and the deposition station.
• An exemplary system includes a substrate, a circuit connected to the substrate, and a thin-film battery connected to the substrate and connected to the circuit.
• the thin-film battery powers the circuit.
• An acceleration-enabled switch is also connected to the substrate for electrically activating the circuit.
• the acceleration-enabled switch is a MEMS device.
• the acceleration-enabled switch includes at least one cantilevered beam.
• the acceleration-enabled switch includes at least one cantilevered beam and an electrical contact. The at least one cantilevered beam contacts the electrical contact in response to an acceleration.
• the acceleration- enabled switch includes a first cantilevered-beam-closure-switch, and a second cantilevered- beam-closure-switch.
• the first cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration
• the second cantilevered-beam-closure-switch forms electrical contact in response to a second acceleration.
• the first acceleration is different than the second acceleration.
• the acceleration-enabled switch forms a first electrical contact in response to a first acceleration, and forms a second electrical contact in response to a second acceleration.
• the first acceleration is different than the second acceleration.
• the first acceleration-enabled switch activates the circuit differently in response to acceleration in either of two different planes.
• a first cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration in a first plane
• a second cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration in response to a second acceleration in a second plane.
• the circuit further includes a memory, and a timer.
• the timer records the time when one of the first cantilevered-beam-closure-switch forms electrical contact in response to a first acceleration, or the time when the second cantilevered-beam-closure-switch forms electrical contact in response to a second acceleration is stored in memory.
• the time when the other of the first cantilevered-beam-closure-switch forms elecfrical contact in response to a first acceleration, or the time (when the second cantilevered- beam-closure-switch electrically contacts based on a second acceleration) is stored in memory.
• the battery is sputtered onto the substrate, and the circuit is formed on the battery.
• the circuit is sputtered onto the substrate, and the battery is sputtered onto the circuit.
• the system fits within a device such as a package, or an ordinance.
• an adhesive attached to the substrate wherein the system is adhesively attached to the device. The adhesive attached to the substrate.
• Some embodiments include a system that includes a substrate, and a thin-film battery positioned on the substrate. The thin-film battery further includes a first lead, a first electrical contact in electrical communication with the first lead, a second lead, and a second electrical contact in electrical communication with the second lead.
• the system also includes an activity- activated switch connected to one of the first and second leads on the substrate for electrically connecting the thin-film battery to the first electrical contact and the second electrical contact.
• An adhesive is attached to the substrate.
• the activity-activated switch is activated in response to acceleration.
• the activity-activated switch is activated in response to a magnetic field.
• the activity-activated switch is activated in response to moisture.
• the activity-activated switch is activated in response to a radio signal.
• the activity-activated switch is activated in response to pressure.
• the activity-activated switch is activated in response to light.
• the system also includes electronics attached to the first lead and the second lead. The electronics are also associated with the substrate.
• the electronics are attached to the substrate and the thin-film battery is attached to the electronics.
• the thin-film battery is attached to the substrate and at least a portion of the electronics is attached to the thin-film battery.
• the activity-activated switch is formed using microelectronic fabrication techniques.
• Some embodiments include a method for activating an activity-activated switch to place a thin-film battery in communication with a set of electronics, and directing an ordinance using the powered electronics. Another method includes activating an activity-activated switch to place a thin-film battery in communication with a set of electronics and storing a start time for a warranty using the powered electronics.
• the activity-activated switch includes accelerating the activity-activated switch at a selected level.
• the method also includes ninning a self-check, and storing the result of the self-check in response to activating the activity-activated switch.
• other accelerations are stored. The time associated with other accelerations over a selected threshold is also recorded.
• the systems that include one or more batteries, and devices to enable or activate the battery or batteries, and a circuit can be formed on a film and placed into small packages or products.
• the batteries, activation device and a circuit can be formed on a flexible sheet having an adhesive thereon so that the package is essentially a label that can be placed on the outside of a package or with the product packaging or on the product or device.
• a complete system can also be incorporated into a product or device to control an aspect of the device or record information about the product or device.
• the enabling or activating apparatus enable a switch in response to an event or events at a later time.
• the systems do not have to be manually activated. Rather, the systems are automatically activated in response to an event. In some embodiments, the entire system is inexpensive. As a result, manufacturers, wholesalers and event retailers could provide such a system either attached to a device or as part of the packaging associated with many devices or products. In addition, these systems are light and provide sufficient energy storage to accomplish at least one function.
• the system is fabricated from non-toxic materials so that a hazard is not being used with a product or device. It is to be understood that the above description is intended to be illustrative, and not restrictive.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Electrochemistry (AREA)
• General Chemical & Material Sciences (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Battery Mounting, Suspending (AREA)
• Charge And Discharge Circuits For Batteries Or The Like (AREA)
• Secondary Cells (AREA)
• Battery Electrode And Active Subsutance (AREA)
• Switches Operated By Changes In Physical Conditions (AREA)

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• 2003
  • 2003-12-31 EP EP03800408A patent/EP1590823A4/de not_active Withdrawn
  • 2003-12-31 WO PCT/US2003/041739 patent/WO2004061887A1/en active Application Filing
  • 2003-12-31 KR KR1020057012546A patent/KR20050092384A/ko not_active Application Discontinuation
  • 2003-12-31 JP JP2004564923A patent/JP2006515952A/ja active Pending
  • 2003-12-31 CN CNB2003801100863A patent/CN100403477C/zh not_active Expired - Fee Related
  • 2003-12-31 AU AU2003300153A patent/AU2003300153A1/en not_active Abandoned

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