EP1560786A1 - Controle de caracteres solides par faisceau ionique a impulsions - Google Patents

Controle de caracteres solides par faisceau ionique a impulsions

Info

Publication number
EP1560786A1
EP1560786A1 EP03816305A EP03816305A EP1560786A1 EP 1560786 A1 EP1560786 A1 EP 1560786A1 EP 03816305 A EP03816305 A EP 03816305A EP 03816305 A EP03816305 A EP 03816305A EP 1560786 A1 EP1560786 A1 EP 1560786A1
Authority
EP
European Patent Office
Prior art keywords
ion
exposure
flux
aperture
feature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03816305A
Other languages
German (de)
English (en)
Inventor
Jene A. Golovchenko
Derek M. Stein
Jiali Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harvard College
Original Assignee
Harvard College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College filed Critical Harvard College
Publication of EP1560786A1 publication Critical patent/EP1560786A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/483—Physical analysis of biological material
    • G01N33/487—Physical analysis of biological material of liquid biological material
    • G01N33/48707—Physical analysis of biological material of liquid biological material by electrical means
    • G01N33/48721—Investigating individual macromolecules, e.g. by translocation through nanopores
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/004—Testing during manufacturing

Definitions

  • This invention relates to fabrication of solid state structures, and more particularly relates to dimensional control of solid state structural features.
  • Precise dimensional control of solid state structural features is essential for many applications in fields ranging from biology and chemistry to physics, optics, and microelectronics.
  • the term "solid state” is here meant to refer to non-biological materials generally. Frequently the successful fabrication of a solid state system critically depends on an ability to articulate specific structural features, often of miniature dimensions, within very tight tolerances. Accordingly, as solid state systems evolve to the micro-regime and further to the nano-regime, nanometric dimensional feature control is increasingly a primary concern for system feasibility.
  • the invention provides processes and corresponding process control methodology that enable reproducible and predictable production of structural features for solid state mechanical and electromechanical systems.
  • the processes of the invention can be controlled to produce, control, and or change feature dimensions in the nano-regime.
  • a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a periodic flux of ions having a characteristic ion exposure duty cycle.
  • the periodic ion flux exposure is carried out at a first exposure temperature and then at a second exposure temperature that is greater than the first exposure temperature, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.
  • the periodic ion flux exposure is carried out at a first ion flux, and then at a second ion flux that is less than the first ion flux.
  • the periodic ion flux exposure is carried out at a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle.
  • each periodic flux duty cycle can be, e.g., greater than about 50%.
  • the structure can be exposed to a continuous flux of ions prior to exposure to the periodic flux of ions.
  • the structural feature for which a physical dimension is to be controlled can be, e.g., an aperture.
  • the feature can be provided in, e.g., a substrate or a membrane, such a silicon nitride membrane or a silicon dioxide membrane.
  • the ion exposure duty cycle is in general characterized by an ion exposure duration, T m , and a nonexposure duration, T ofr
  • T m ion exposure duration
  • T ofr nonexposure duration
  • t is time
  • clAldt is a selected rate of change in aperture area
  • A R ss is a steady state rate of aperture area change characteristic ofthe structure for continuous ion flux exposure
  • ⁇ ⁇ sa is a material response rise time and ⁇ decay is a material response decay time characteristic of the structure under ion exposure.
  • FIGS. 1A-1D are schematic cross-sectional views of fabrication sequence steps for the production of an aperture in accordance with the invention
  • FIGs. 2A-2G are schematic cross-sectional views of an example fabrication sequence of steps for the production of the cavity of Fig. IA in a membrane
  • FIGs. 3A-3B are schematic diagrams of an ion beam sputtering system configured in accordance with the invention to implement precision feedback control;
  • Fig. 4A is an electron micrograph of a cavity formed in a 500 nm-thick silicon nitride membrane in accordance with the invention.
  • Fig. 4B is an electron micrograph of a 10 nm-wide aperture formed in a silicon nitride membrane by a process provided by the invention.
  • Fig. 4C is a plot of detected ion counts as a function of time for the aperture etch process that resulted in the aperture shown in Fig. 4B;
  • Fig. 5 A is an electron micrograph of a 37 nm-wide aperture formed in a 500 nm-thick silicon nitride membrane in accordance with the invention
  • Fig. 5B is an electron micrograph ofthe aperture of Fig. 5A enlarged to 58 nm in width by a process provided by the invention
  • Fig. 5C is a plot of detected ion counts as a function of time for the aperture etch process that resulted in the aperture increase from that shown in Fig. 5 A to that shown in Fig. 5B;
  • FIGS. 6A-6C are schematic cross-sectional views of stages in the reduction of a limiting aperture diameter by a process provided by the invention.
  • Fig. 7A is an electron micrograph of a 95 nm-wide aperture formed in a 500 nm-thick silicon nitride membrane in accordance with the invention
  • Fig. 7B is an electron micrograph of the aperture of Fig. 5A reduced to 3 nm in width by a process provided by the invention
  • Fig. 7C is a plot of detected ion counts as a function of time for the aperture etch process that resulted in the aperture decrease from that shown in Fig. 7A to that shown in Fig. 7B;
  • Fig. 8 is a plot of detected ion counts per second as a function of ion sputtering time of a square aperture, initially of about 72 nm x 72 nm in area, in a silicon nitride membrane of 500 nm in thickness, subjected to the mass transport processes of the invention under various temperatures;
  • Figs. 9A-9B are plots of aperture area as a function of total ion dose for five different ion fluxes and aperture area decrease per dose as a function of ion flux, respectively, for an aperture having an initial area of about 1400 nm 2 , for the material transport processes provided by the invention;
  • Figs. 10A-10C are scanning electron micrographs of a trenched silicon nitride layer exposing the underlying silicon wafer on which the layer was deposited, partial fill-in ofthe silicon nitride trenches as a result of the material transport process conditions provided by the invention, and partial sputter etch removal ofthe upper trench layer as a result ofthe sputtering conditions provided by the invention;
  • Fig. 11 is a plot of counted ions/second traversing an aperture as a function of time for various ion beam exposure cycles
  • Fig. 12 is an atomic force micrograph of a silicon nitride membrane one surface of which was exposed to a focused ion beam to produce apertures and protrusions on the membrane surface opposite that exposed to the ion beam;
  • FIG. 13 is a schematic view of a solid state structure surface undergoing a material transport and ion sculpting process provided by the invention, identifying physical mechanisms corresponding to various terms of an ion sculpting model provided by the invention;
  • Fig. 14A is a plot of aperture area as a function of total ion dose for four different ion fluxes and for continuous as well as periodic ion flux exposure, for the material transport processes provided by the invention;
  • Fig. 14B is a plot of the inverse of adatom diffusion distance as a function of incident argon ion flux
  • Fig. 15 is a plot of measured current as a function of time produced as negatively charged DNA molecules were drawn through a nanopore produced in accordance with the invention in a silicon nitride membrane.
  • Fig. 16 is a plot ofthe area of a hole in a silicon dioxide membrane experimentally measured as a function of argon ion beam fluence, for the indicated duty cycles of pulsed beam exposure and for a continuous beam;
  • Fig. 17 is a plot of the area of a hole in a silicon nitride membrane experimentally measured as a function of argon ion beam fluence, for the indicated duty cycles of pulsed beam exposure and for a continuous beam, and for a temperature of -100°C;
  • Fig. 18 is a plot of the area of a hole in a silicon nitride membrane and a plot of the area of a hole in a silicon dioxide membrane experimentally measured as a function of argon ion beam fluence, as the ion exposure is switched between continuous beam exposure and pulsed beam exposure having a 50% duty cycle of pulsed ion beam exposure at 10 ms beam "on” and 10 ms beam “off.”
  • the processes for dimensional feature control provided by the invention can be directed to a wide range of materials and structural configurations.
  • the example processes here described are meant to be illustrative but not to represent specific limitations in materials or configurations.
  • the processes of the invention are particularly well-suited for precisely controlling structural feature dimensions, and for enabling such control on the scale of nanometers.
  • This control can be especially advantageous for the precise formation and definition of nanometric-sized features and spaces, such as gaps existing as an aperture, e.g., pores, slits, orifices, vents, and holes, as well as trenches, channels, troughs, and in general, the spacing between two or more distinct feature edges.
  • a process for forming an aperture of a prespecified extent, e.g., diameter, in a structural layer there is carried out a process for forming an aperture of a prespecified extent, e.g., diameter, in a structural layer.
  • a starting structure 10 is provided, shown in cross-section in the figure.
  • Such starting structure 10 can be supplied as, e.g., a substrate, a thick or thin layer provided on a support such as a substrate, a membrane, or suitable structure.
  • a cavity 12 is formed in the structure 10 on a selected surface 14 of the structure and in a region at which an aperture is desired.
  • the cavity 12 extends into the bulk ofthe structure 10 for only a fraction of the structure's thickness, rather than through the entire thickness of the structure, to an opposing surface 18.
  • the deepest level, i.e., the bottom 16, of the formed cavity lies at some midpoint in the structure's bulk.
  • the geometry of the cavity bottom 16 and the cavity sidewalls 20 are preferably selected to enable controlled formation of a limiting aperture of controlled transverse and longitudinal dimensions in later processing steps. In the example illustrated, a bowl- shaped cavity is employed.
  • a limiting aperture 24 is formed which transforms the cavity 12 to an aperture extending through the thickness of the structure. Further thinning ofthe structure causes the cavity-free surface 18 to intersect upper sidewall locations ofthe cavity, whereby the limiting aperture 24 takes on that profile of the sidewalls which exists at a given cavity intersection depth.
  • the diameter ofthe limiting aperture 24 increases as thinning is continued, given the bowl shape of the cavity. It is to be recognized, however, that the diameter of the limiting aperture can be made to decrease as thinning is continued, for a corresponding cavity sidewall profile.
  • asperities or other distinct profile features or geometry can be provided along the cavity sidewalls for controlling limiting aperture geometry.
  • This aperture forming process provides distinct advantages in that it does not rely on direct lithographic techniques for defining final limiting aperture and wall dimensions. As a result, the aperture forming process is not constrained by lithographic resolution limits. The process enables production of a limiting aperture dimension or diameter as small as 1-2 nanometers or less without the need for exotic or expensive processing apparatus.
  • this aperture formation process can be carried out on any of a wide range of structures, such as substrates, layers, and films provided on a supporting structure or free-standing as, e.g., membranes.
  • Solid state materials in general can be employed as the structural material in which an aperture is formed; microelectronic or semiconductor materials can be particularly effective in enabling efficient processing techniques, as described below.
  • the broad classes of inorganic and organic glassy materials such as oxides, glasses, plastics, polymers, and organic films, e.g., PMMA, as well as crystalline materials, such as semiconductors, e.g., silicon and silicon nitride, and metals, as well as other materials can be employed.
  • the invention is not limited to a particular structural material or class of structural materials.
  • the structural material is selected to meet the criteria of the application specified for the aperture.
  • the method is particularly well-suited for enabling formation of apertures in membranes, and for providing the nano-regime control of aperture formation that is required for many membrane applications.
  • microelectronic and semiconductor materials and fabrication processes can be advantageously exploited in accordance with the invention to enable cost-effective and efficient manufacturability.
  • a starting substrate 30, e.g., a silicon wafer is provided, as shown in Fig. 2A.
  • a selected membrane material e.g., silicon nitride
  • the thickness of the coating layer 34 is that thickness selected for the membrane to be formed.
  • a silicon-rich, low-stress, silicon nitride layer of about 50 nm in thickness is deposited on the silicon wafer by conventional chemical vapor deposition (CVD) processing.
  • a layer of photoresist 40 is formed on one of the deposited nitride layers and patterned to define a nitride etch window 38. The opposing surface ofthe wafer is blanket coated with a photoresist layer 40.
  • the silicon nitride exposed by the nitride etch window 38 is removed by, e.g., conventional reactive ion etching techniques.
  • the silicon wafer is bulk micromachined by a suitable etch procedure, e.g., a conventional anisotropic wet etch process employing KOH.
  • a suitable etch procedure e.g., a conventional anisotropic wet etch process employing KOH.
  • the bulk wafer etch process employed is characterized by a high selectivity to the wafer material over the membrane material.
  • the KOH etch substantially does not attack the silicon nitride layers. Continuation of the etch through the thickness ofthe wafer thereby produces a self-supporting nitride membrane 36 in a nitride layer 34.
  • the nitride membrane forms the bottom of a pyramidal well 39 etched out of the silicon wafer due to the anisotropic, crystallographic- specific nature of the KOH etch.
  • the extent ofthe nitride membrane is thus determined by the thickness and crystallographic orientation of the starting silicon wafer. As will be recognized, the membrane dimensions can therefore be controlled as-desired.
  • the remaining layer 32 of silicon nitride .opposite the membrane layer can then removed if desired by, e.g., conventional reactive ion etching, and then a layer of silicon dioxide 41 is optionally grown on the exposed silicon surfaces, if electrical insulation of the silicon wafer is desired for a given application.
  • Conventional wet or thermal oxide growth can be preferred over a CVD oxide layer such that oxide is only formed on the silicon surfaces in the manner illustrated.
  • a CVD or other deposition process can be employed to produce an oxide layer on both the silicon wafer and the lower silicon nitride membrane surfaces, or on the nitride membrane surface alone.
  • a cavity is formed in a selected surface of the membrane.
  • an etching process as illustrated, a layer of resist 42 is formed on the lower membrane surface, i.e., the membrane surface opposite that in the pyramidal wafer well.
  • the resist is then patterned to define the cavity to be formed in the membrane.
  • This choice of surface for the cavity can be preferable for enabling a selected lithography technique on a flat surface; it can be difficult to effectively pattern a layer of photoresist provided on the membrane surface at the bottom of the silicon pyramidal well.
  • the cavity can be formed on such a surface with lithographic techniques specific to such a configuration.
  • the invention contemplates the use of photolithography, electron beam lithography, and other suitable lithographic processes for defining the cavity pattern. It is to be recognized that the selected lithographic process is preferably suited to the dimensions of the cavity; e.g., electron beam lithography can be preferred over conventional photolithography for cavities having submicron dimensions.
  • the sidewall profile of the cavity to be formed in the membrane can be specified to produce a selected limiting aperture geometry.
  • the lithographic step defining the cavity, as well as the nature of the cavity etch process itself, can also be employed to define the cavity sidewall profile.
  • the selected lithographic cavity pattern is continuous, e.g., as a circle, and a relatively isotropic etch process, e.g., an isotropic reactive ion etch process, is carried out to form a bowl-shaped cavity 12 in the nitride membrane 36, as shown in Fig. 2G.
  • An isotropic reactive ion etch process inherently forms the bowl shape extending from a circular photolithographic pattern.
  • the invention contemplates the use of substantially any cavity pattern for achieving a desired cavity geometry. Square, rectangle, hexagonal, or other pattern, symmetric or asymmetric, can be employed. Due to the batch nature of lithographic processes and other microfabrication processes employed in the aperture forming method, arrays of cavities, of varying extent and geometry, can be defined in a single structure such as the membrane illustrated. Because the aperture formation process ofthe invention relies on structural thinning, rather than lithography, to define the final limiting aperture geometry, the largest lateral dimension of the cavity can be much greater than the desired limiting aperture extent; in general, the largest cavity pattern dimension can be two or more orders of magnitude larger than a selected limiting aperture diameter. Preferably, given the characteristics of a selected cavity etch process, the cavity pattern extent is correspondingly selected to produce a desired extent at the cavity bottom, and to produce a range of cavity expanses between the cavity bottom and the material surface.
  • Any suitable cavity etch process can be employed, including, e.g., plasma etching, focused reactive ion etching, focused ion beam etching, wet chemical etching, or other selected technique. Whatever etch process is selected, it is to be controlled to enable termination of the etch at a cavity bottom located at some distance within the membrane thickness or other structure in which the cavity is formed, i.e., at a point between the surfaces of the structure. For etch processes that are fully characterized for the structural material being employed, this can be accomplished by a timed etch; conventional diagnostic techniques otherwise can be employed in the conventional manner to produce a cavity bottom at a selected location in a membrane other structure.
  • etch processes can be employed as-necessary for cavity formation in a given material or composite of materials. For example, where a composite membrane is formed of silicon nitride and silicon dioxide layers, the chemistry of a selected cavity etch, such as a plasma etch, can be adjusted over the course of the etch based on the material to be etched at a given time in formation of the cavity.
  • etch processes can be employed to alter the cavity sidewall profile as a function of cavity depth.
  • a combination of isotropic and anisotropic wet etches can be employed to produce selected curvature and slant of cavity sidewalls formed in a nitride or silicon layer or membrane.
  • a combination etch such as this enables the formation of asperities or other distinct features to be located at the limiting aperture.
  • thinning of the structure is then carried out on the structure surface opposite that in which the cavity was formed, employing an appropriate procedure to open a limiting aperture in the structure.
  • the invention contemplates a wide range of thinning processes and is not limited to a particular thinning technique; all that is required is the ability to etch back the structure from a surface opposing that in which the cavity was formed.
  • a particularly well-suited thinning process is ion beam sputtering.
  • a beam of ions is directed to the structure surface to be thinned to sputter etch away material from that surface.
  • sputtering In typical ion beam sputtering processes at relatively low beam energies, e.g., in the range of keV, for every incident ion, on average, a single atom of material is ejected from the sputtering target; sputtering may thus be considered as an atomic-scale version of "sand blasting.”
  • sputter etching results in the removal of about one atomic layer of silicon nitride from the membrane per second for incident ion fluxes between about 10 1 -10 15 ions/cmVsec.
  • the invention contemplates a wide range of additional thinning processes, including ion beam assisted etching, ion beam induced etching, electron beam etching or assisted etching, plasma and reactive ion etching, wet etching such as electrochemical etching, chemomechanical polishing, and other fabrication and manufacturing processes that enable controlled thinning of a structure to intersect a cavity on a surface opposite that being thinned.
  • etch species e.g., a sputtering ion beam or reactive plasma environment, need not be focused on a particular location of the structure surface being thinned.
  • a blanket exposure of the structure surface can be employed to thin the entire extent ofthe structure. All that is required is that the structure surface including the cavity be isolated, i.e., shielded, from the etch species attacking the opposing surface. This results in nano-regime precision in feature formation without the requirement of nano- regime control of the etch apparatus and species.
  • the inventors herein have discovered that highly precise aperture formation can be accomplished by implementing a feedback mechanism during the thinning process.
  • This feedback mechanism is based on detection of a physical species provided during the thinning etch in a manner that is indicative of the physical dimensions of a feature, e.g., an aperture, that is being produced by the etch.
  • Such feedback enables real time control ofthe aperture formation process, whereby a precise and prespecified aperture diameter can be reliably and reproducibly formed.
  • this feedback mechanism can in general enable precise sculpting of nanometric features and nanostructures, and finds wide application for micro- and nano-systems.
  • a selected aperture diameter can be prespecified based on a rate and/or number of ions expected to pass through the aperture before the selected diameter is produced.
  • a first passage of ions through a newly-formed limiting aperture can be detected, and the number of ions passing through the aperture as its limiting aperture dimension enlarges can be individually detected and quantified.
  • a controlling signal can be sent to the sputtering ion beam controller to terminate the etch process at the desired aperture dimension.
  • detection of a physical species can be carried even prior to the time at which an aperture is formed.
  • the level of X-rays produced by the ion beam gun that are detected as passing through the structure being thinned can be expected to increase as the thickness of the structure decreases. Detection of ions similarly can be made even prior to aperture opening. This enables control of the process even prior to the final opening of the aperture.
  • the system includes an ion gun 52, e.g., an ion gun capable of producing an ion beam with an energy range and diameter suitable for a given application.
  • an energy between about 1 eV and about several hundred KeV and a beam diameter between about a few nanometers to spatially very broad beams can be employed.
  • a vacuum etch chamber 55 is provided in which the etch process can be carried out.
  • the etch chamber pressure is well-controlled such that etch environment pressures of less than about 10 '8 Torr can be maintained during the etch process.
  • a turbomolecular pump 57 is provided for pressure control and maintenance.
  • a mass spectrometer can be provided for monitor and analysis of the etch environment species.
  • a structure holder 54 is provided for supporting a structure 10 in which an aperture is to be formed, e.g., employing clips to maintain the position of the structure.
  • the holder 54 is thermally conductive and provides structure temperature control, e.g., by a liquid heat exchange loop, employing a thermocouple positioned on the holder or on the structure itself.
  • the holder also be electrically conductive to enable voltage charge control of the structure and to enable monitor of incident ion beam current.
  • the holder includes a central aperture 56 corresponding to the location at which an aperture is to be formed in the structure 10.
  • a beam of ions 58 directed from the ion gun toward the structure 10 thins the structure to form therein an aperture, after which time the ion beam 58 traverses both the structure aperture and the holder aperture.
  • an electron flood gun 59 can be included in the arrangement to direct a beam of electrons at the structure being etched during the etch process.
  • positive electrical surface charge can accumulate on the structure due to positively-charged ion beam irradiation. Electron beam irradiation of the structure can be carried out to neutralize this surface charge, if necessary for a given application.
  • the stream of a species traversing the etched aperture is to be detected and quantified in the manner described below. If no such feedback control is desired for a given application, then no additional apparatus is necessary, and the sputtering can be carried out in a conventional sputtering chamber under conditions selected for a given etch.
  • species detection and quantification systems can be included to provide a desired degree of feedback control.
  • ion focusing optics 60 can be provided for focusing the ions once they traverse the aperture, to facilitate ion detection by a detector that is relatively distant from the structure aperture through which the ions traversed.
  • X-Y deflection optics and Einzel lenses can be employed in conventional configurations to produce a desired focusing of the ions.
  • optics design software can be employed to produce a customized focusing configuration for a given detection arrangement. It is to be recognized that such focusing configuration may not be required for configurations where the ion detection system is relatively near to the holder aperture.
  • the focusing configuration preferably directs the output ion beam to an ion energy analyzer 62 for filtering the beam for the selected species to be detected and quantified by, e.g., counting.
  • the ion beam sputtering process will include and produce a wide range of physical species and radiation, including, e.g., sputtered silicon nitride atoms, etch species scattering in the etch chamber, and X-rays emanating from the ion gun.
  • the species to be detected is preferably filtered out from the produced radiation, produced etch species, and background radiation.
  • Such background can be minimized by, e.g., isolating the ion beam gun, the structure to be etched, and the downstream optics from further downstream components such as detectors, as described below, by an electrostatic energy filter or other suitable filter.
  • it can be preferable to maintain the ion beam gun, structure, and optics at reduced temperature conditions in a suitable vessel, as shown in Fig. 3B, whereby thermal effects can be controlled.
  • a cooling configuration is also useful to maximize cleanliness of the etch and beam detection environment and to control structure temperature. It can also be advantageous to maintain the structure at an elevated temperature to influence materials modification phenomena during ion irradiation.
  • an ion energy analyzer 62 or other species-specific filtering system is advantageous in that it enables redirection of a species to be detected out of the line of sight of the sputtering trajectory.
  • the species detection location can then be distant and out of line from bombardment by background and produced radiation such as X-rays.
  • the electrostatic energy analyzer employed produces a 90° bend in the trajectory of the ion species to be detected, whereby that species is separated from the other species and radiation coming from the etched structure. If the detection resolution and speed desired for a given etch process do not require a low background noise environment, then the ion energy analyzer is not required for many applications.
  • the filtered species of interest output from the electrostatic energy analyzer is directed to a detector 64.
  • a detector 64 For the detection of an electrically charged ion species, it can be preferable to employ a high-resolution, single ion detector, e.g., a Channeltron 4860 detector from Gallileo Electro-Optics of Sturbridge, MA. Such a detector can be configured to produce one electrical output pulse per detected ion. Such single ion detection and associated counting can be preferred for many applications to enable nanometric-scale precision in production of a solid state feature such as an aperture.
  • etching of a nanometer-range aperture requires counting of the passage of no more than about 10-20 ions through the aperture.
  • a single ion detection and counting system, or another system of equivalent resolution is preferred to reproducibly implement nano-regime control of feature production. If the features to be produced for a given application do not require nanometric dimensional control, then a more coarse detection mechanism can be employed.
  • a fast pulse amplifier 66 can be employed to modify the electrical output of the detector to facilitate an ion counting process.
  • a suitable pulse preamplifier can be constructed in a conventional manner or a suitable commercial system, e.g., the VT120 Fast Preamp from EG&G Ortec of Oak Ridge, TN, can be employed.
  • the pulse amplifier 66 can be configured to amplify the pulse voltage to about 1 V.
  • This amplified detection pulse is directed to a counting system, e.g., a universal counter such as the HF53131A by Hewlett Packard, for producing an electrical signal indicative of the number of detected ions. It is recognized that detection pulse amplification may not be required for a given pulse counter configuration, and that the pulse amplification, if implemented, is preferably controlled based on requirements ofthe counting system.
  • a counting system e.g., a universal counter such as the HF53131A by Hewlett Packard
  • the electrical output of the pulse counter 68 is directed to a controller 70 that implements, e.g., monitor and control software for enabling an operator to monitor the thinning etch process in real time and for producing an ion gun control signal.
  • the controller is implemented in software employing, e.g., Labview, from national Instruments of Austin TX. Whatever controller implementation is selected, it preferably provides ion beam control signals based on the ion feedback.
  • the controller can be implemented to initiate ion beam sputtering of the structure for a specified time interval and to configure the counter to count the number of ions received at the detector during the specified time interval.
  • the number of ions counted is determined by the controller and the extent of the aperture can at that point be calculated based on this ion count and the known ion flux.
  • the number of ions counted during the interval is then employed by the controller to determine if a further interval of ion beam sputtering is to be initiated to continue etch of the structure.
  • a computer system including monitor, memory, and associated input/output and printing systems is provided for enabling visual monitoring and recording of the etch process progression. Display of the ion count rate and aperture extent over time, and storage of count rate and other system values can be preferable for many applications.
  • the output of the controller 70 is directed to an ion gun control system 72 for controlling the sputtering etch itself.
  • ion gun feedback control is effected by control ofthe ion gun's X-Y deflection plates to deflect the ion beam away from the structure 10 at the time when the desired aperture dimension is produced. This can be a preferable control technique because of the rapid speed at which the beam can be deflected, typically in much less than a millisecond. It is recognized, however, that alternative beam control mechanisms can be employed. For example, an electrostatic grid can be located between the gun and the structure holder.
  • the grid is energized in response to an ion beam termination control signal to return the beam back toward the ion gun.
  • the accelerating electron impact voltage of the ion gun can be controlled in response to an ion beam termination control signal to terminate production of the ion beam.
  • a feedback calibration curve can be produced for a given ion beam species, structure material, and aperture geometry to be produced.
  • Such a calibration curve enables specification of the relationship between ion count number and/or rate and limiting aperture dimension, and can be established empirically, to specify for a particular structural material and thickness a relation between number of measured counts per time and actual limiting aperture dimension.
  • the relationship between limiting aperture dimension and ion count is generally linear.
  • an extrapolated calibration curve can be produced based on a few measurements. To produce each such measurement, a thinning etch is carried out for a prescribed duration, during which an ion count is made and at the end of which an aperture dimension is physically measured by, e.g., transmission electron microscopy. Multiple etch durations and dimensional measurements can be carried out on a single aperture as that aperture is increased from etch to etch. A calibration curve can then be produced based on the ion count and aperture measurements and extrapolated to lower and higher ion counts. With such a calibration curve in hand, the controller system of the feedback configuration can be programmed to direct a controlling etch termination signal to the ion gun when the prescribed ion count corresponding to a desired aperture dimension is reached.
  • etch environment temperature and pressure, mechanical stress and temperature of the structure being etched, and feature dimensions and structural aspects can influence the relationship between detected ion count rate and physical feature dimensions.
  • the residual mechanical stress in a silicon nitride membrane can impact its etch characteristics.
  • the density of apertures in an array to be formed, the aperture proximity to each other, and other aspects can impact etch characteristics.
  • the calibration curve preferably is produced with consideration for various physical and etch environment parameters that can impact etch characteristics.
  • Example 1 A 50 nm-thick silicon nitride membrane having a cavity formed on one surface was produced by the process outlined in Figs. 2A-G.
  • the silicon nitride was deposited by low pressure chemical vapor deposition.
  • the cavity bowl was etched in the membrane by a reactive ion etch process.
  • Fig. 4A is an electron micrograph of the cavity formed in the membrane.
  • the membrane surface opposite that including the cavity was exposed to an argon ion beam etch at an energy of about 3 KeV, and a flux of about 3 Ar + sec/nm 2 .
  • the ion beam diameter was about 200 ⁇ m and the membrane temperature during the etch was maintained at about -120°C.
  • the ion beam was directed toward the membrane for 1 sec during each 5 sec interval. During the etch process, ion detection and counting was carried out.
  • Fig. 4B is an electron micrograph ofthe membrane cavity including a 10 nm limiting aperture formed by thinning ofthe membrane.
  • Fig. 4C is a plot of argon ion count/second as a function of sputtering time. This plot includes that time when the ion beam was directed to the membrane, not when the beam was deflected away from the membrane. As indicated by the plot, the number of counted ions/sec was substantially zero until at point in time, at 25 sec, when the limiting aperture was opened. Then as the limiting aperture diameter increased, the ion counts correspondingly increased. This enables control ofthe aperture formation process.
  • an atom beam etch species if the beam is electrically neutral rather than electrically charged, detection of the atoms can be difficult.
  • a distinct non-etching detection species such as an electron beam can in this case advantageously be employed for controlling formation of a prespecified aperture diameter.
  • Such a scenario can be preferable where the structure being etched may become electrically charged by the impinging sputter beam, thereby warranting the use of an electrically neutral beam.
  • an electrically charged detection species for facilitating beam bending, filtering, and detection and counting with conventional techniques.
  • Electrically neutral detection species can be employed, however, when such is optimal for a given application. For example, laser fluorescence of electrically neutral transmitted atoms can be employed for detecting and counting control functions.
  • a separate detection species is preferably one that can be directed in some manner toward a feature being produced and whose movement in the vicinity ofthe feature is indicative of changing dimensions of the feature. This enables detection of the species in a manner that is indicative of changes in the feature's dimensions. For example, in the case of formation of a membrane aperture, direction of an electron beam toward the membrane, such that electrons traverse the membrane aperture once it is formed, enables counting of electrons in the manner of ion counting described above.
  • the invention does not require the use of a single detection species; more than one detection species can be employed. For example, X-rays produced by the ion gun can be monitored as the structure thins to predict and indicate a the time of a further aperture formation event. Thereafter, ions, electrons, or other species can be employed to monitor changes in aperture diameter. Neutral species and other species suited to a given application can similarly be employed together to provide precise detection and feedback mechanisms.
  • the invention does not require that the detection species be directed orthogonally to the plane of a feature being produced.
  • electron beam diffraction detection and the diffraction patterns produced by a material can be employed as a feedback mechanism.
  • detection of the electron beam diffraction pattern characteristic ofthe lower layer can be employed as the feedback mechanism.
  • the electron beam makes a glancing angle with the material.
  • diffraction can be detected as a function of the aperture diameter by diffraction rings indicative of changes in aperture periphery.
  • the diffraction feedback mechanism here occurs at the aperture periphery rather than as a trajectory through the aperture.
  • an electron beam can be directed parallel to the upper structure surface being thinned in formation of an aperture, whereby the withdrawal of surface material is indicated by an increase in electron count in a direction parallel to that surface.
  • the invention contemplates alternative detection species.
  • atoms in a meta-stable state e.g., an electronic meta-stable state
  • Such meta-stable atoms e.g., excited states of helium or argon
  • Whatever detection species is selected it preferably is one that can be detected and counted on a time scale that is commensurate with the desired dimensional scale of control in the feature being produced.
  • microsecond detection and counting processes are preferable to enable high sensitivity and resolution in the feedback mechanism. Less strict sensitivity and resolution requirements need be placed on detection species for micro- and macro-scale feature control.
  • the invention contemplates application of physical species detection and counting for feedback control in a wide range of fabrication processes. Many fabrication processes that are conventionally carried out in open loop fashion, i.e., without feedback control, can be adapted to enable nanoscale dimensional feature control with the incorporation of the highly sensitive and precise feedback mechanisms provided by the invention.
  • reactive ion etching in a plasma rather than sputter etching, can be employed to thin a structure surface in formation of a limiting aperture.
  • the structure surface including a cavity is isolated from the plasma environment by a suitable fixture. The opposing structure surface is fully exposed to the plasma environment.
  • ions traversing the aperture are detected by, e.g., a channeltron positioned on the isolated side ofthe structure. Accordingly, in the manner ofthe ion sputtering etch described above, feedback control can be imposed on the plasma etch process based on the detection and counting of plasma ions traversing the aperture.
  • physical detection and feedback control can be imposed on a wet etch process employed to produce a feature.
  • electrodes can be provided near to the cavity formed in the structure.
  • the structure surface opposite the cavity is exposed to a wet etch environment, e.g., an electrochemical environment, and the structural surface which includes the cavity is isolated from the etch environment.
  • a wet etch environment e.g., an electrochemical environment
  • ions in the liquid that traverses the aperture can be detected and counted at the cavity-side electrodes. This enables feedback control for terminating the electrical stimulus of the etch at a time when the desired aperture dimension is attained.
  • the invention contemplates implementation of physical species detection and feedback process control for enabling fabrication of a wide range of structural, solid state features.
  • the feedback mechanism is not limited to the aperture formation process described above.
  • an aperture, slit, trench, hole, or gap between two feature edges can be precisely formed, by any of a wide range of processes, in a precise and controllable manner with the feedback mechanisms of the invention.
  • the invention contemplates a membrane aperture formation process where a cavity is formed in one surface ofthe membrane and then that membrane surface, including the cavity, is exposed to, e.g., an ion sputtering etch. Because the thickness ofthe membrane between the cavity bottom and the opposing surface is much less than at other membrane regions, such etching opens a limiting aperture at the base of the cavity before completely etching away other regions of the membrane.
  • the feedback mechanisms of the invention enable precise control and monitoring of this process.
  • Example 2 A silicon nitride membrane of about 50 nm in thickness was produced in the manner of Figs. 2A-2E. An aperture was formed through the entire thickness ofthe membrane by reactive ion etch. This resulted in a 37 nm-wide aperture, an electron micrograph of which is shown in Fig. 5A. The membrane and aperture were then exposed to an argon ion beam at a flux of about 1.7
  • the ion beam was directed toward and away from the membrane to sputter for 1 second during each 5 second interval.
  • the membrane was maintained at a temperature of about -102°C during the ion beam exposure.
  • Fig. 5B is an electron micrograph of the 58 nm-wide aperture that resulted from 180 seconds of sputtering.
  • Fig. 5C is a plot of counted ions/sec as a function of time. A generally linear relationship between ion counts as a function of time is demonstrated.
  • the invention does not require that the process being controlled by feedback be a subtractive process as in Example 2; additive processes can also be controlled by the feedback techniques ofthe invention.
  • an aperture, trench, or hole of a given dimension can be diminished or narrowed, by a suitable process, during which the physical species detection and feedback process control of the invention is imposed to control the diminishing process.
  • the features can be produced in a membrane, in a layer or layers provided on a support structure, or in a structure itself, e.g., a silicon wafer.
  • a structure e.g., a silicon wafer.
  • This capability can be particularly advantageous for producing a field of nanometric features, e.g., in formation of a lithographic mask plate.
  • a starting membrane can be processed with selected geometries to ultimately form wires, pads, and other mask plate geometries by additive or subtractive processes. This enables precise formation ofthe mask plate features in an efficient and effective process.
  • the inventors herein have discovered that the conditions of interaction between an ion beam and a solid can be controlled for manipulating nanoscale feature dimensions in solid state materials. These controlled ion beam interaction techniques enable solid state material topology to be adjusted, rather than necessarily removed.
  • solid state material can be caused to transform such that feature edge locations are precisely and controllably produced and/or modified by atomic transport mechanisms that are locally additive or subtractive.
  • a limiting aperture 24 in a structure 10 is caused to be adjusted from a first diameter, D v to a smaller diameter, D 2 or D 3 .
  • the starting aperture is formed in a selected structure in any suitable fashion, e.g., by the methods described above and shown in Figs. 1A-1D and Figs. 2A-2G, in, e.g., a membrane, layer, substrate, or other structure.
  • the structure surface 18 in which the limiting aperture was formed is then exposed to ion beam irradiation, employing, e.g., the system described above and illustrated in Figs. 3A-3B.
  • the ion beam irradiation is generally considered to be a sputtering/material removal process, it is particularly unexpected that this material movement and addition condition can effectively progress, even in the presence of the atomic sputtering erosion, to result in a change in the physical dimensions of a feature.
  • Example 3 A silicon nitride membrane of about 500 nm in thickness was produced in the manner ofthe process outlined in Figs. 2A-E. An aperture was formed through the entire thickness of the membrane by reactive ion etching. Fig. 7 A is an electron micrograph of the 95 nm-wide aperture that resulted from the etch.
  • the membrane and its aperture were then exposed to an argon ion beam flux at an energy of about 3 KeV, and a flux of about 47 Ar7sec/nm 2 .
  • the membrane was maintained at a temperature of about 20°C during ion flux exposure.
  • the ion beam was directed to the membrane for 250 ms for each 1 sec time interval.
  • Fig. 7B is an electron micrograph of the membrane after exposure to the argon ion beam reduced the aperture diameter to about 3 nm.
  • Fig. 7C is a plot of counted argon ions/sec as a function of time. A generally linear count rate is indicated for midpoints in the process.
  • the mechanisms underlying the ability of an ion beam to cause material build up at an ion-irradiated aperture rim may be related to atomic transport through the bulk ofthe structure; ion-induced changes in viscosity, electronic surface charge, mechanical stress generation, and lateral swelling of the structure; and/or atomic surface transport caused by ion-induced surface atom excitation or supersaturation of mobile adsorbed ionic species on the structure surface.
  • the ion penetration depth is much less than the structure thickness, resulting in a domination of surface transport processes.
  • the invention does not require a specific material transformation mechanism, but rather, provides distinguishing process control parameters that impose predictable material transformation results.
  • Example 4 Referring to the graph of Fig. 8, there is plotted the ion counts/second detected by an ion sputtering system like that of Fig. 3A as a function of time for a 500 nm-thick silicon nitride membrane in which was initially fabricated a square aperture of about 72 nm in length.
  • the membrane was fabricated based on the process shown in Figs. 2A-2F and the aperture was fabricated by a focussed ion beam directed at the membrane to form an aperture that extended completely through the membrane.
  • Each region of the graph indicates the temperature at which the membrane was maintained during bombardment by an argon ion beam.
  • the beam flux was
  • the on/off duty cycle of the ion beam being directed toward the membrane was such that the beam was directed to the membrane for 200 msec during each 1 sec interval.
  • the plotted data also indicate that within the regime for imposing material movement and addition, the rate of material transport in altering feature topology is temperature dependent. At relatively higher temperatures, the transport process proceeds more rapidly than at relatively lower temperatures. Knowledge of this temperature-dependent transport rate enables precise process control and characterization.
  • Example 5 Five silicon nitride membranes of about 500 nm were fabricated in the manner of the process outlined in Figs. 2A-E. Apertures each of about 1400 nm 2 in area were produced in the membranes by focused ion beam etching. The membranes were then exposed to an argon ion beam at an energy of about 3 KeV for various total doses at five ion beam fluxes. Each membrane was maintained at a temperature of about 22°C during the ion beam exposure. Each ion beam exposure was controlled to sputter for 200 msec during each 1 second interval.
  • FIG. 9A-9B there is plotted the area of the apertures in nm 2 as a function of total argon ion beam dose, in ions/nm 2 , for five different argon ion beam fluxes, and the aperture area decrease per dose, as a function of argon ion beam flux, respectively. From the plotted data, it is indicated that as a function of total argon ion beam dose, the aperture shrinks more rapidly at low incident fluxes relative to higher incident fluxes. In other words, the lower the flux, the less dose is required to shrink an aperture.
  • the strong nonlinearity indicates that the amount of material mass transport produced by the ion beam irradiation per incident ion may be suppressed at high incident fluxes. This characterization enables operation at a selected mass transport rate.
  • the invention contemplates empirical analysis of flux dependence for a selected material, to enable precise control of the material movement.
  • Example 6 A 50 nm-thick layer of silicon nitride was deposited by low pressure chemical vapor deposition on a silicon wafers. The silicon nitride layer was patterned by electron beam lithography to produce trenches of about 50 nm in width through the entire thickness ofthe silicon nitride layer. The bottom of each trench thereby exposed the underlying silicon surface.
  • Fig. 10A is a scanning electron micrograph of the trenched silicon nitride layer on the silicon wafer.
  • the trenched silicon nitride layer was exposed to an argon ion beam at an energy of about 3 KeV and a flux of about 20 Ar7nm 2 /sec, where the ion beam was sputtering for 0.5 seconds for each 2 second interval.
  • the silicon wafer was maintained at a temperature of about 20° C during the ion beam exposure.
  • Fig. 10B is a scanning electron micrograph of the trenched silicon nitride layer after about 200 seconds of sputtering. Note that silicon nitride material has been moved to the trenches, whereby the trenches have been partially filled in. This indicates that for the process conditions here employed, material is transported from the silicon nitride layer to the trenches.
  • a second 50 nm-thick trenched silicon nitride layer like the one just described was exposed to an argon ion beam at an energy of about 3 KeV and an ion flux of about 30 ArVnmVsec, with the ion beam sputtering for one second during each two second interval, for a total sputtering time of about 300 seconds.
  • the silicon wafer was maintained at a temperature of about - 100° C during the ion beam exposure.
  • Fig. 10C is a scanning electron micrograph of the trenched silicon nitride layer.
  • the silicon nitride material at the top ofthe trenches has been etched away, as indicated by the rounding ofthe trench edges, but the bottom ofthe trenches are not at all filled in.
  • This example demonstrates the temperature control that can be imposed to predictably produce material transport and feature adjustment or material removal by sputtering as desired for a given application.
  • the energy of the ion beam can impact the nature of material transport. Specifically, for a given structural material and temperature, a given ion beam current density, and a given time structure of the ion beam exposure, as discussed below, there exists an ion beam energy above which material transport is effectively induced in the manner described above and below which sputtering in the conventional manner occurs.
  • This juncture between the two distinct operational regimes can be empirically determined for a given material and ion beam exposure system, and can be employed as an important control technique for precisely enabling and disabling the material transport processes.
  • the time structure of the ion flux exposure i.e., the sequence of intervals in which the ion beam is controlled to enable interaction with a material and then controlled to not interact with the material, impacts the nature of material transport and dimensional feature change.
  • the imposition of an on/off duty cycle on the ion flux is found to impact the ability to cause material movement and corresponding dimensional feature change.
  • a 500 nm-thick silicon nitride membrane was produced in the manner of the process outlined in Figs. 2A-E.
  • a 95 nm-wide aperture was formed through the entire thickness ofthe membrane by focused ion beam etch.
  • the membrane and aperture were then exposed to an argon ion beam at an energy of about 3 KeV and a flux of about 14 ArVsec/nm 2 .
  • the membrane was maintained at a temperature of about 16 °C during the ion beam exposure. During the exposure, the amount of time that the ion beam was directed to the membrane was varied.
  • ion detection and counting was carried out as an indication of the reduction or enlargement of the aperture in response to the various ion beam exposure cycles.
  • Fig. 11 is a plot of argon ions counted/second as a function of sputtered time. The plot indicates that the 400 msec/1 second interval and the 600 msec/1 second interval time structures increased the aperture diameter, while all other time structures decreased the aperture diameter. This demonstrates that at about room temperature, control between material transport processes and sputtering processes can be achieved by control ofthe ion beam exposure time structure.
  • the invention provides an understanding, based on experiments using periodically pulsed ion beams, for directly determining the time scale of material transport on ion sculpted materials, including dielectric materials such as silicon dioxide and silicon nitride.
  • Experimental measurements produced in accordance with the invention demonstrate that ion sculpting can indeed be successfully applied to the technologically important oxide of silicon, and further demonstrate a discovery of the invention, that ion sculpting material transport time scales can be surprisingly long, indicating that the materials do not necessarily relax to their equilibrium condition until seconds after a stimulating ion beam has been extinguished. This effect can be used advantageously in applications of ion sculpting to predictably control the sculpting process for a desired dimensional result.
  • additional samples for ion beam sculpting were prepared as 500 nm-thick, freestanding Si ⁇ 2 or SiN membranes supported on a silicon frame.
  • the Si ⁇ 2 membranes were thermally grown on Si(100) substrates, then capped for further processing by depositing a 200 nm- thick layer of SisN4 by low pressure chemical vapor deposition.
  • Si ⁇ i capping layer was then removed by etching in hot phosphoric acid, and then the oxide surface was cleaned by exposing it to an oxygen plasma.
  • Silicon nitride membranes were fabricated by first depositing a 500 nm-thick layer of low-stress SiN directly on Si(100) substrates by
  • Pulses of 200 volts were applied to deflection plates at the exit port of the ion gun to steer the beam about 5 mm away from a hole being processed within about one microsecond.
  • the term "pulsed ion exposure" is thus herein meant to refer to the direction and removal of an ion beam at the hole.
  • the rate of hole closure i.e., the rate of material transport
  • the rate of hole closure can be controlled by increasing the beam "off time, and specifically can increase the material transport rate.
  • the efficiency with which a pulsed ion beam sculpting process reduces a hole diameter is further found to increase with the beam "off time, i.e., Toff, as an increasing function of Toff, independent of ion beam flux, processing temperature, or the initial conditions of a hole being ion beam sculpted.
  • the efficiency with which a pulsed ion beam sculpting process reduces a hole diameter can be enhanced, to promote reduction ofthe hole, by lowering the flux of the ion beam or by raising the processing temperature, given a selected ion beam exposure duty cycle.
  • pulsed ion beam sculpting can be precisely controlled by the initial conditions of a hole being exposed to a pulsed ion beam, as well as the surface topography of the membrane in which the hole is formed, in conjunction with the duty cycle of the pulsed ion beam. More specifically, the closing efficiency of a hole being ion sculpted by a pulsed ion beam is directly controlled by the initial condition of the hole, including the size of the hole and the surface topography ofthe membrane in which the hole is formed.
  • a large initial hole e.g., of about 150 nm in diameter
  • a smaller hole e.g., of about 50 nm in diameter
  • ion beam sculpting can involve the motion of independent atoms along the surface of the material, and/or the collective motion of many atoms in a surface layer, to account for the lateral transport of matter under the influence of low-energy ion beams.
  • the material response is parameterized with a rise time, fa, and a decay time, decay.
  • the closing rate of a hole approaches a steady-state closing rate value, i.e., a continuous beam closing rate value, Rss, as (l ⁇ e (i - to - J/T f" se) )i?ss when the ion beam is turned on, and decays as e- t/T(decay when the beam is turned off, where t is time and to is the initial time.
  • An exponential rise and decay of the hole closing rate is the simplest phenomenological model that incorporates material response time scales. Such time scales are common to microscopic models that are understood to provide a description of the pulsed ion sculpting phenomenon of the invention, including surface diffusion or viscous flow models.
  • the pulsed ion beam sculpting process of the invention is characterized by a condition in which ion-stimulated mobile species cause the rise time in material response, T se, to decrease with increasing ion beam flux.
  • the mechanism by which Trise is reduced by increasing beam flux is understood to be a function of incoming ions ejecting mobile surface species, i.e., sputter erosion, thereby reducing the intrinsic time for such species to be trapped on the surface.
  • Ion sputter erosion is known to arise from momentum transfer in atomic collision cascades that last on the order of a picosecond.
  • the time scale for a material to respond in ion beam sculpting is unusually long - on the order of seconds.
  • the extent to which a pulsed ion beam reduces the material response rise time, fc, relative to the material response decay time, Tdecay can be determined by measuring the ratio of ion sculpting efficiency, ⁇ , for continuous beam exposure and pulsed beam exposure.
  • ⁇ ion sculpting efficiency
  • the ion sculpting efficiency was found to be clearly enhanced by the periodically pulsed beams in both materials.
  • the measured value of efficiency, ⁇ increased from 0.3 for the continuous beam exposure to 1.4 for the pulsed beam exposure, in units of nm 2 /(Ar + n ⁇ r 2 ).
  • the measurement was repeated on the same Si ⁇ 2 sample to find the efficiency, ⁇ , enhanced from 0.5 for continuous beam exposure to 1.3 for pulsed beam exposure.
  • the measured value of efficiency, ⁇ , for the SiN membrane was found to increase from 1.6 for continuous ion beam exposure to 5.8 for pulsed beam exposure, then returned to 3.5 when the continuous beam exposure measurement was repeated.
  • the ion sculpting efficiency, ⁇ should be enhanced by at least a factor of 2 if the material response rise time, Trise, is negligibly small, and again neglecting sputter erosion effects.
  • the experimentally determined ⁇ -enhancement factors were observed to be 3.4 for the Si ⁇ 2 membrane, and 2.3 for the SiN membrane, by averaging the slopes for continuous or pulsed segments of the data from the beginning and the end of each experiment, which likely differ due to surface material changes affected by significant argon irradiation.
  • the measured values of ⁇ then are preferably corrected for the competing effect of pore opening by sputter erosion by using the low temperature data in Figure 18.
  • Sputter erosion is assumed to contribute a constant hole opening rate of 2.9 nm 2 /(Ar + nm- 2 ) because the sputter yields of Si ⁇ 2 and SiN are very similar, weakly flux-dependent, and presumed to be independent of duty cycle.
  • the corrected experimental efficiency ⁇ - enhancement factors are 1.3 for the Si ⁇ 2 membrane and 1.6 for the SiN membrane. These values are less than the predicted value of 2 because the material response rise time, Trise, although significantly diminished relative to the material response decay time, Tdecay, is not negligibly small.
  • This discovery has bearing on ion beam sculpting nanofabrication techniques of the invention in enabling control of ion beam time structure and control of the ion dose necessary to close holes, i.e., to impose material transport, on a feature being ion sculpted. It further determines whether holes can be made smaller at all by influencing the competition between the hole-closing and hole- opening processes of ion -induced lateral matter transport and sputter erosion, respectively.
  • the dynamics of pulsed ion beam sculpting can be described by an exponential rise and decay ofthe hole closing rate.
  • the incident ion beam must shorten the material response time in order to account for the enhanced sculpting efficiency of pulsed beams.
  • the ion detection and counting mechanism of the invention for imposing feedback control on ion irradiation mass transport is advantageous for many applications for enabling precise feature formation, but is not required by the invention. Once a mass transport process is characterized, and for processes that do not require very fine feature control, feedback control of the system may not be required. All that is required is the exposure of the material to an ion beam under conditions that impose processes such as mass transport for adjusting dimensions of structural features of the material by local material addition or subtraction.
  • This structural material adjustment process provided by the invention can be applied to a wide range of structural features, including holes, slits, apertures, and gaps in general, and in trenches and other such features where a distinct feature rim or wall is present and can be adjusted. It further can be applied to fabrication of protruding features such as hillocks and asperities.
  • the ion flux and dose and the temperature of a membrane are selected to produce a protrusion on the membrane by exposure to ion beam flux.
  • One membrane surface is exposed to the ion beam flux under the selected conditions. This results in formation of a protrusion on the membrane surface opposite that exposed to the ion flux.
  • Example 8 A silicon nitride membrane of about 500 nm in thickness was produced by a LPCVD process following the fabrication sequence outlined in Fig. 2. The membrane was exposed to a gallium ion beam at an energy of about 50 KeV and a dose of about 4 nanocoulombs/ ⁇ m 2 . Five different isolated exposure areas on the membrane were defined, namely, 0.12 ⁇ m 2 , 0.14 ⁇ m 2 , 0.16 ⁇ m 2 , 0.18 ⁇ m 2 , and 0.20 ⁇ m 2 .
  • Fig. 12 is an atomic force micrograph of the nitride membrane surface opposite that which was exposed to the gallium ion beam.
  • brightness level corresponds to topology; the brighter a region in the image, the "taller," or higher, is the topology of that region.
  • both of the 0.16 ⁇ m 2 , 0.18 ⁇ m 2 , and 0.20 ⁇ m 2 membrane areas, and one of the 0.14 ⁇ m 2 membrane areas were opened by the ion beam exposure, i.e., an aperture through the thickness of the membrane resulted from the ion beam exposure in that area.
  • the other 0.14 ⁇ m 2 membrane area and the 0.12 ⁇ m 2 membrane area were not opened by the ion beam exposure and instead exhibit hill-like protrusions formed on the membrane surface opposite that exposed to the ion beam.
  • dose can be controlled to cause mass transport in a manner that produces a protrusion on the surface of a structure.
  • This example further demonstrates that the ion beam species can impact the nature of feature formation and adjustment; in this example gallium ions were employed as opposed to the argon ions employed in earlier examples. It is understood in accordance with the invention that ion species can be selected to control aspects of feature formation processing. Similarly, it is understood in accordance with the invention that the ambient gas species present during the ion interaction with a material can be selected to control the nature ofthe interaction.
  • the features formed by and/or having dimensions adjusted or changed by the processes of the invention can be provided on the surface of a structure, in a layer provided on a support structure or a free-standing membrane, or other surface which can be irradiated by an ion beam.
  • Composite material structures can be processed. There is no restriction on the fabrication sequence employed to produce the starting structures for which dimensional adjustment is to be carried out.
  • the invention provides a model of the various ion beam processes described above for enabling control of the process parameters.
  • Such process control provides an ability to, in effect, ion beam sculpt nanoscale features with a precision not previously attainable.
  • Solutions to analytical expressions of the model, as-obtained with appropriate parameter values for a given sculpting process, can be employed in accordance with the invention to produce prespecified nanoscale features in a precise, predictable manner, and in open- loop fashion, i.e., without the need for closed-loop ion counting rate feedback control like that provided by the feedback system of Fig. 3A described above.
  • the invention provides a recognition that the ion beam sputtering and mass transport phenomena discussed above compete during an ion beam sculpting process.
  • the methodology ofthe invention provides the ability to control these phenomena such that one can be made to dominate over the other in a manner to enable production of a desired nanoscale feature or geometry.
  • the invention provides analytical model expressions that are based on process parameters which generally depend on the properties of a material being ion beam sculpted, e.g., the specific material composition, the initial geometry of a structure or feature at the material surface, material defects, and doping impurities, as well the local environment around the sculpting process, for example the gaseous ambient environment, the temperature of the material, the incident ion species, ion flux, and ion energy, and other parameters that characterize the incident ion beam. It is recognized in accordance with the invention that the process parameters therefore are to be adjusted based on a particular ion beam sculpting application to achieve desired process results, in the manner described below.
  • a first such competing process tends to open the pore and is understood to likely be driven by ion beam-sputter erosion of a pore edge. This erosion process is understood to be dominant at low temperatures and high ion beam fluxes.
  • Established sputtering phenomenology can be employed for most applications to account for and control sculpting processes that are dominated by sputtering in this regime.
  • a second, competing process tends to cause motion of matter, i.e., mass transport, and can operate to a degree necessary for reducing the starting pore diameter. Without being bound to theory, it is understood that more than one view can explain this phenomenon.
  • a first theory understood in accordance with the invention takes the view that a very thin, e.g., about 5 nm-thick, stressed viscous surface layer can be created by the energy and matter deposited on a material surface by an ion beam.
  • An enhanced collective motion driven by a reduced viscosity and/or enhanced stress owing to implantation effects or surface tension, may cause the layer to flow or relax, whereby material is transported across a surface.
  • a preferred ion beam sculpting control model reflects a process theory in which incident ions create as well as annihilate excess, independent, and mobile species such as adatoms, ad-dimers, ad-molecules, molecular clusters and surface vacancies that are present at the surface of a material exposed to an ion beam.
  • C is the concentration of adatoms on a two-dimensional surface
  • r (x ⁇ y) is the radial surface position
  • t time
  • F the ion flux
  • Y x the number of adatoms created per incident ion
  • D the adatom surface diffusivity
  • r trap is the average lifetime of an adatom before thermally-activated adatom annihilation occurs at a surface defect
  • ⁇ c is the cross-section for adatom.
  • Fig. 13 schematically illustrates the competing mechanisms modeled by this expression. Changes in concentration of surface adatoms, dC/dt, depends firstly on a rate of generation of adatoms that results from the ion flux, F, with Y x indicating the number of created adatoms per incident ion.
  • the second modeled term is a mass transport term, driving the adatom transport by diffusion along the surface and within the structure, and thus depending on the adatom surface diffusivity, D, and the adatom concentration gradient. This transport term models the reduction in a nanopore radius by mass transport of material from around the pore, in the manner described and demonstrated above.
  • the surface adatom concentration change is determined by adatom annihilation that can occur at a surface defect, or trap; ⁇ trap is correspondingly defined as the average lifetime of an adatom before such annihilation at a trap occurs.
  • the final term models ion beam annihilation of adatoms; here ⁇ c reflects the cross-section for adatom annihilation by the incident ion beam itself. It is also understood that annihilation of adatoms occurs at the pore edge as the pore is filled by the mass transport phenomena; this annihilation mechanism is treated as a boundary condition for Expression (3) above.
  • the magnitudes ofthe parameters Y v D, r toap , and ⁇ c can be estimated for a given ion beam sculpting application from experience with suitable materials and can be determined by independent experiments.
  • a matrix of pore-closing experiments can be conducted, preferably including both steady state and transient conditions, and employing the feedback system of the invention described previously for making precise determination of the influence of each parameter on feature formation, e.g., pore-reduction rate, and other characteristics.
  • One or more "test" ion flux exposures of a material structure can be carried out under a variety of test process conditions, with each "test” exposure monitored by the ion counting feedback loop previously described above. This monitoring enables an indication of feature fabrication dependence on the test process conditions.
  • the magnitudes of the model parameters, and corresponding optimal process conditions can then be determined and selected based on the accumulated test process results.
  • the values of the model parameters can be manipulated by adjusting not only temperature, ion beam flux, and ion beam energy, but also by adjusting the ambient gas species and pressure, ion species, material properties, e.g., concentrations of trace impurities on the material surface, material defects, and impurity doping.
  • the parameters are therefore treated here as being fully adjustable to enable selection based on test process results, if desired, and to enable precise control of the ion beam sculpting process for a given application.
  • the effective surface lifetime, ⁇ , of an adatom in the presence of both annihilation mechanisms can be given as:
  • n is the number of adatoms in an critical island of a critical size, i.e., a size just large enough to be more likely to grow than to shrink
  • ⁇ X lani is a characteristic time constant for adatom island formation.
  • the pore boundary, or nanopore edge is taken to be a "perfect sink" for adatoms, which are there transformed to a thin layer of accumulating matter that accounts for pore reduction. If the nanopore edge is taken as a sink for adatoms then the adatom supersaturation drops as the nanopore edge is approached.
  • An alternative boundary treatment contemplated by the invention employs a surface accommodation velocity to describe a partial sink for adatoms at the pore boundary, in a manner analogous to surface recombination velocity factors employed in semiconductor modeling of charge carriers interacting with surfaces. These pore boundary conditions can be directly generalized to other feature location characteristics.
  • the diffusion model employed by the control method of the invention is thus found to be phenomenological in nature, relying on several idealizations and assumptions to compensate for uncertainty in aspects of many microscopic properties of matter under ion beam exposure. Nevertheless, it is understood by the inventors that studies of pulsed and continuous ion beam exposures at different temperatures, gas ambients, and material conditions can be employed for a given application in conjunction with the model to permit the determination of materials-specific parameters like diffusivity, D, ion-induced adatom population Y v area of adatom annihilation by ion impingement ⁇ , and adatom lifetime prior to trap annihilation, ⁇ trap , for a given application. Such analysis enables prespecified and precise ion beam sculpting of the material in the production of useful nanoscale devices.
  • practitioners of ion beam sculpting can use the model provided by the invention in both quantitative and qualitative ways. That is, by knowing the qualitative as well as quantitative nature of the solutions to the analytical model expressions and their dependence on various parameters of the model that are subject to experimental control, the parameters can be adjusted to achieve desired dimensional control of structures for large classes of structures.
  • the model demonstrates a qualitative dependence of an ability to increase the rate of pore reduction, and even the possibility of reducing a pore diameter at all with ion sculpting, by increasing the material temperature or by decreasing the incident flux of incident ions.
  • the model also provides a quantitative dependence of the precise degree of temperature increase or flux decrease required for a given application.
  • model Other qualitative and quantitative uses of the model include correlations between analytical predictions of the model and ancillary empirical observations. For example, an observation that nanopores, the area of which are reduced to a desired area more quickly under the ion beam sculpting process, may require a minimum initial diameter before the sculpting process can be effective, can be correlated to process conditions via the model. Although the model at any given stage of its solution evolution may not contain the details of the process controlling the pore diameter, it can be used to correlate the process control parameters, and thereby, e.g., control the process mechanisms.
  • Fig. 14A provides a similar plot of pore reduction data, here of nanopore area as a function of total ion beam dose for several ion beam fluxes and for continuous as well as pulsed ion beam exposure.
  • the dotted plot points correspond to experimentally measured results, and the solid lines correspond to results produced by analysis of Expression (3) above, as explained in detail below.
  • ion beam sculpting process parameters can be adjusted for a given application, based on the process model provided by the invention, to enable prescription of nanoscale geometries produced by the sculpting process.
  • parameters will in general depend on the composition of the material being ion sculpted, the environment around the structure during the sculpting process, temperature, and on the incident ion species, energy, and other parameters that characterize the incident ion beam.
  • the incident ion beam can be supplied as atoms, i.e., neutral ions, ions of a controlled charge state, molecules or clusters of incident atoms, or indeed any controlled energy source. It is recognized that differing model parameters will be required for various energy sources.
  • both the surface of a structure being ion sculpted and the ion-induced adatoms on the surface may be highly susceptible to the influence of the environment.
  • environment is meant a background ambient of a gas like oxygen, hydrogen, sulfur hexafluoride, or other selected gas.
  • the state and chemical reactivity of the ambient gas, as well as the excitation state of the surface or charge state ofthe surface being acted upon, can be influenced by, or catalyzed by, the incident ion beam. This can result in removal or addition of adatoms and/or creation or elimination of surface defect traps, thereby influencing the mass transport and annihilation mechanisms of the ion sculpting process.
  • Means other than an incident ion beam such as an electron beam, laser beam, atomic beam, metastable excited atomic beam, mixtures of ion beams, or other energy source, can be used to control the sensitivity of the ion sculpting process to the ambient environment in which the process is carried out.
  • Adjustment and control of these various influences are recognized in accordance with the invention to enable flexibility and reproducibility of prespecified and precise ion beam sculpted geometries of a material in the production of useful nanoscale devices.
  • the charge state of an ion beam can be adjusted based on a particular ion beam sculpting application to achieve desired ion sculpting process results.
  • Positive, neutral, or negative ions can be employed in accordance with the invention to produce a desired surface force between adatoms that are produced and transported along the surface during the sculpting process.
  • the ion sculpting process can be specifically controlled by controlling the dominance of adatom creation and transport mechanisms relative to adatom annihilation mechanisms.
  • the adatom creation mechanism represented by the term FY V along with the adatom mass transport mechanism, represented by the term DV 2 C
  • the adatom trapping annihilation mechanism represented by the term C/ ⁇ t ⁇ V
  • FC ⁇ c the adatom ion impingement annihilation mechanism
  • process parameters that influence the ion flux, F, and adatom diffusivity, D are selected relative to process parameters that influence surface defects and ion impingement characteristics, to control the adatom concentration and transport.
  • material temperature, material surface conditions, and other material dependent characteristics can be selected to increase adatom diffusivity, D, thereby to enhance mass transport to a feature being ion sculpted and to maximize the rate at which an ion sculpted feature is produced.
  • Minimization of surface defects and other material trapping mechanisms can be carried out to minimize annihilation of adatoms by traps, thereby further enhancing the mass transport mechanism of the ion sculpting process.
  • Ion beam flux is therefore preferably controlled to influence adatom creation and adatom annihilation, thereby to determine the availability of adatoms for the ion sculpting process. Control of incident ion species and energy, and control of the gaseous process ambient enable control ofthe factors Y x and ⁇ c similarly to control adatom creation and annihilation.
  • adatoms created within the mass transport distance, X m , of a feature, e.g., a the pore edge, are more likely to diffuse to and add to the material at the pore edge than be annihilated by incident ions; the opposite is true of adatoms created farther away.
  • the mass transport distance, X m therefore decreases with increasing flux.
  • Fig. 14A provides an indication of the corresponding mass transport distance, X m , for each ion flux considered.
  • the mass transport distance, X m thus is found to represent a characteristic distance from the pore edge within which adatoms are more likely to reach the pore than be annihilated by traps or ion beam flux erosion. Adatoms beyond a distance X m from a feature to be formed, such as a pore edge, are more likely to be annihilated before they reach the pore edge.
  • the model thereby enables an ability to prescribe a minimum distance, X m , of material that must be provided around a starting feature, such as a nanopore, or around a location at which a feature is to be fabricated, to provide sufficient material for fully forming the feature, e.g., for reducing the radius of the nanopore to a desired final radius, R, under given processing conditions, and enables adjustment of processing conditions to accommodate a maximum diffusion distance X m that is available for a given application.
  • a minimum distance, X m of material that must be provided around a starting feature, such as a nanopore, or around a location at which a feature is to be fabricated, to provide sufficient material for fully forming the feature, e.g., for reducing the radius of the nanopore to a desired final radius, R, under given processing conditions, and enables adjustment of processing conditions to accommodate a maximum diffusion distance X m that is available for a given application.
  • K 0 and K x are modified Bessel functions of the second kind.
  • This expression enables ion beam sculpting control, for a given set of process parameters characteristic of an ion beam environment, to produce a nanopore of a desired radius R. For example, it is found from this model that reduction of pore radius is enhanced with increasing temperature. This can be accounted for by a thermally activated adatom diffusion coefficient in the manner described above.
  • Expression (9) can be employed to specify R ⁇ sax , the largest starting pore radius that can be reduced at all under any particular set of processing conditions.
  • This maximum starting radius, R raax increases with increasing temperature and with decreasing ion beam flux.
  • R ⁇ becomes infinite, in a scenario that determines the conditions under which an open pore can be closed.
  • the maximum radius, R max is thus given by:
  • the thickness, H, of a growing membrane or film produced as a nanopore radius is reduced and a pore is filled in depends on the rate of reduction, d( ⁇ # )/dt, where R is the radius of the nanopore.
  • R is the radius of the nanopore.
  • Higher pore reduction rates result in thinner films than lower pore reduction rates.
  • higher ion beam energies result in thicker films than lower ion beam energies.
  • the invention provides the ability to prescribe a selected film thickness by selecting ion beam sculpting process conditions, and particularly ion beam energy, that result in a desired pore reduction rate and film thickness.
  • Solutions to Expression (12) above provide time dependent solutions of the adatom concentration on the surface of a material being processed after the beam is off, as:
  • Expression (15) can be employed in combination with Expression (9) above to predict and then control the rate of feature formation or change, e.g., nanopore diameter reduction, when a pulsed ion beam sculpting process is employed.
  • the pulsed ion beam time structure i.e., the pulse rate and duty cycle, can be adjusted in accordance with the invention to achieve control over the sign and rate of change of structural dimensions.
  • This transient may be important under some conditions, but it is understood that for most applications, the "beam-on” transient is significantly shorter than the "beam-off transient and therefore can be ignored. If for a given application such is not the case, then the "beam-off transient analysis given above is preferably extended to the "beam-on” analysis. Then the duty cycle of the ion beam irradiation can be particularly selected to achieve desired ion sculpting results.
  • a nanopore was sculpted in a Si 3 N 4 membrane for use as a single-molecule electronic detector of DNA.
  • Proteinaceous nanopores, or channels have been inserted into lipid bilayers in aqueous solutions where they serve as electronic sensors to identify and characterize single molecules.
  • proteins in lipid bilayers are labile and the channel diameters they provide cannot easily be adjusted.
  • Robust, solid-state nanopores provided in accordance with the invention, fashioned to any desired diameter, enable a yield of new data and understanding of transport in confined spaces, and make it possible to produce robust single-molecule- sensing devices to characterize molecules of DNA and other biopolymers at unprecedented speeds.
  • a 5 nm-diameter pore in a silicon nitride membrane was produced in accordance with the process parameters and process control described above. Then, using electrophysiology techniques, the pore was tested with double-stranded DNA. After applying a voltage bias that would draw the negatively charged DNA molecules through the nanopore, diminutions of the ionic current were observed, as shown in Fig. 15, in a manner analogous with the ionic-current blockages observed when single strands of DNA are translocated through the channel formed by -hemolysin in a lipid bilayer.
  • the ion beam-sculpting control method ofthe invention represents a superior approach to nanoscale fabrication.
  • the invention enables control of sputtering and mass transport processes that compete during an ion beam sculpting process.
  • reproducibility does not depend on precisely matching all conditions and starting dimensions. If, however, such can be achieved, then the control model of the invention enables open loop processing without reliance on ion rate counting or other feedback control.
  • the invention therefore is not limited to features or geometries that can accommodate an ion counting feedback loop.
  • the ion beam-sculpting control method of the invention is particularly useful for fabricating a wide variety of nanoscale semiconductor devices, masks, and mechanical features, and as explained above is not limited to formation of a pore or a through-hole. Slits, trenches, crosses, doping profiles, resist patterning, buried layer profiles, and other geometries and features can be produced and dimensionally controlled, or changed. Similarly, a wide range of materials can be employed, including microelectronic materials such as Si, Si0 2 , Si 3 N 4 , Al, and a wide range of others. Furthermore, it is recognized that next-generation ion-source arrays and mask technologies, combined with multichannel ion detectors, can be employed to enable highly parallel applications of the nanoscale ion beam sculpting control methods of the invention.

Abstract

L'invention concerne le contrôle d'une dimension physique d'un caractère structural solide, contrôle pour lequel une structure solide est fournie, ladite structure comportant une surface et un caractère structural. Cette structure est exposée à un premier courant périodique ionique présentant un premier cycle de travail d'exposition, qui se caractérise par une première durée d'exposition ionique et une première durée de non-exposition pour le premier cycle de travail, et ensuite à un second courant périodique ionique présentant un second cycle de travail d'exposition qui se caractérise par une seconde durée d'exposition ionique et une seconde durée de non-exposition plus longue que la première durée de non-exposition pour le second cycle de travail, de façon à provoquer le transport dans la structure, la surface de la structure incluse, de matière de la structure jusqu'au caractère structural suite à l'exposition au courant ionique pour modifier sensiblement au moins une dimension physique du caractère par l'addition locale de matière de la structure au caractère.
EP03816305A 2002-10-29 2003-10-28 Controle de caracteres solides par faisceau ionique a impulsions Withdrawn EP1560786A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42190802P 2002-10-29 2002-10-29
US421908P 2002-10-29
PCT/US2003/034192 WO2005000732A1 (fr) 2002-10-29 2003-10-28 Controle de caracteres solides par faisceau ionique a impulsions

Publications (1)

Publication Number Publication Date
EP1560786A1 true EP1560786A1 (fr) 2005-08-10

Family

ID=33551199

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03816305A Withdrawn EP1560786A1 (fr) 2002-10-29 2003-10-28 Controle de caracteres solides par faisceau ionique a impulsions

Country Status (4)

Country Link
EP (1) EP1560786A1 (fr)
JP (1) JP2006509645A (fr)
AU (1) AU2003304247A1 (fr)
WO (1) WO2005000732A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LT5698B (lt) 2008-12-30 2010-11-25 Kauno technologijos universitetas Žmogaus funkcionalumo kontrolės sistema
CN102741430B (zh) 2009-12-01 2016-07-13 牛津楠路珀尔科技有限公司 生化分析仪器、用于进行生化分析的第一模块以及相关方法
WO2012042226A2 (fr) 2010-10-01 2012-04-05 Oxford Nanopore Technologies Limited Appareil d'analyse biochimique et vanne rotative

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1192453B1 (fr) * 1999-06-22 2012-02-15 President and Fellows of Harvard College Evaluation a l'echelle atomique et moleculaire de biopolymeres

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2005000732A1 *

Also Published As

Publication number Publication date
AU2003304247A1 (en) 2005-01-13
JP2006509645A (ja) 2006-03-23
WO2005000732A1 (fr) 2005-01-06

Similar Documents

Publication Publication Date Title
US7118657B2 (en) Pulsed ion beam control of solid state features
US6783643B2 (en) Control of solid state dimensional features
US20050126905A1 (en) High-precision feedback control for ion sculpting of solid state features
US8206568B2 (en) Material deposition techniques for control of solid state aperture surface properties
US7258838B2 (en) Solid state molecular probe device
US7582490B2 (en) Controlled fabrication of gaps in electrically conducting structures
EP1402570B1 (fr) Controle des caractéristiques dimensionnelles à l'état solide
US6464842B1 (en) Control of solid state dimensional features
EP1592641B1 (fr) Fabrication regulee de trous dans des structures conductrices d'electricite
JP2003502166A (ja) 固体状態の次元的特徴の制御
JP2003502166A5 (fr)
US8394640B2 (en) Study of polymer molecules and conformations with a nanopore
US9139914B2 (en) Three-dimensional copper nanostructure and fabrication method thereof
Rangelow Dry etching-based silicon micro-machining for MEMS
US20120267729A1 (en) Self-sealed fluidic channels for nanopore array
JP2006526777A (ja) ナノ細孔、その使用方法、その作成方法、及びそれを使用して生体分子を特徴付ける方法
EP1708957B1 (fr) Analyse de molecules par translocation par une ouverture revetue
Jamaludin et al. Controlling parameters of focused ion beam (FIB) on high aspect ratio micro holes milling
WO2005035437A2 (fr) Commande de retroaction a precision elevee pour la sculpture ionique de caracteristiques solides
WO2005000732A1 (fr) Controle de caracteres solides par faisceau ionique a impulsions
Li et al. Nanoscale ion beam sculpting
Kumar Micromachining of Single Cell Array for Oxygen Consumption Rate Analysis
CN114275729A (zh) 制作纳米孔阵列的方法、纳米孔阵列和纳米孔阵列传感器
Andagana Junta Nanofabrication of Optofluidic Photonic Crystal Resonators for Biosensing
Junta et al. Nanofabrication of Optofluidic Photonic Crystal Resonators for Biosensing

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20050527

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20080206

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20080617