Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
  • B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
  • B05D5/083—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface involving the use of fluoropolymers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
  • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
  • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
  • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
  • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
  • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/60—Deposition of organic layers from vapour phase
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
  • B05D7/14—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies

Definitions

• a process for forming a fluoropolymer layer on a thin film device comprising: a.) delivering a gas phase fluoromonomer and a gas phase free radical polymerization initiator to said thin film device, b.) mixing said gas phase fluoromonomer and said gas phase free radical polymerization initiator to form a gas phase mixture of said fluoromonomer and said free radical polymerization initiator, c.) contacting said thin film device with said gas phase mixture of said fluoromonomer and said free radical polymerization initiator, and d.) initiating polymerization of said fluoromonomer with said free radical polymerization initiator, whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.
• Fluoropolymers comprising the fluoropolymer layers formed by the present process are comprised of repeating units from fluoromonomers defined herein and may have a number averaged molecular weight of over 10,000. Fluoropolymer layers produced by the process of the present invention have a uniform thickness and are typically from about 500 angstroms to about 50,000 angstroms thick. Thin film devices on which fluoropolymer layers may be formed by the present process comprise devices known in the microelectronics industry as semiconductor wafers, integrated circuits, flat panel displays, micromechanical devices, microelectrical mechanical systems, and thin film optical and optoelectrical devices.
• CF 2 CFOCH 2 CF 3
• CF 2 CFOCH 2 C 2 F 5
• CF 2 CFOCH 2 CF 2 CF 2 CF 3 .
• Free radical polymerization initiators of the present process comprise initiators that can form free radicals which initiate polymerization of the fluoromonomer and result in formation of a fluoropolymer layer on the thin film , device. Initiators are preferably delivered to the thin film device in the gas phase, however it is contemplated that initiators may be present on, or integral with, the surface of the thin film device.
• Free radical polymerization initiators of the present process include peroxides, saturated alkyl halides, haloalkenes, halogens and inorganic halides.
• Peroxide initiators of the present invention contain at least one peroxide functional group (-OO-) and may be represented by R ⁇ OR 2 , wherein R 1 and R 2 are independently selected from saturated hydrocarbon radicals which may further comprise halogen, oxygen and nitrogen atoms.
• Hydrocarbon peroxides such as di- t-butylperoxide may be used as initiator in the present process.
• Saturated alkyl halide initiators of the present process may be represented by R-X wherein X is a halogen, preferably fluorine, and R is a hydrocarbon radical, and preferably branched (a secondary or tertiary radical). Preferably R is fluorinated and more preferably R is perfluorinated.
• Saturated alkyl halide initiators include, for example, perfluorotetramethyl butane CF 3 (C(CF 3 ) 2 ) 2 CF3 as well as perfluorocarbon iodides such as F(C 2 F 4 ) X I, wherein x is from 1-4.
• Haloalkene initiators of the present invention are represented by
• Inorganic halide initiators of the present invention include nitrogen trifluoride and sulfur hexafluoride.
• the present invention is a process for forming a fluoropolymer layer on a thin film device, and in part involves contacting said thin film device with a gas phase fluoromonomer.
• the process involves mixing the gas phase fluoromonomer and gas phase free radical polymerization initiator to form a gas phase mixture of fluoromonomer and free radical polymerization initiator.
• Mixing of the gases may occur by any process, but preferably occurs by diffusion following the direction of gaseous streams of the fluoromonomer and initiator into the same volume. Mixing may be controlled to occur prior to or during contacting of the gases with the thin film device.
• gas phase fluoromonomer and gas phase free radical polymerization initiator may be delivered to the surface of the thin film device by chemical vapor deposition means.
• the gases are distributed over the surface of the thin film device so that the fluoromonomer and radicals formed from the free radical polymerization initiator react and form a fluoropolymer layer on the surface of the device.
• the function of the chemical vapor deposition means is to distribute the gases to the surface of the thin film device in a substantially controlled manner.
• the chemical vapor deposition means preferably provides a substantially controlled flow profile of gases at a controlled flow rate to a particular surface area of the thin film device.
• the present process may be carried out using chemical vapor deposition means having a linear injector as taught by DeDontney et al. in U.S. Patent No. 5,683,516, herein incorporated by reference.
• the linear injector comprises an elongated member with end surfaces and at least one gas delivery surface extending along the length of the member and which includes a number of elongated passages formed therein. Also formed within the member are a number of thin distribution channels which extend between the elongated passages and the gas delivery surface.
• a number of metering tubes may be inserted into each elongated passage and are spaced from the walls of said passages and extend between the ends.
• the present process may be carried out using chemical vapor deposition means having an annular injector as taught by Young et al. in U.S. Patent No. 5,851 ,294, herein incorporated by reference.
• the annular injector comprises a plenum body having at least one plenum formed therein and a plurality of nozzles for injecting fluoromonomer and initiator gases into a processing chamber.
• the nozzles are spaced from the plenum and are positioned and configured to provide a uniform distribution of gases across the thin film device where they mix, react and form a uniform fluoropolymer layer on the thin film device.
• the process of the present invention may be carried out in a contoured plate reactor as taught by Mahawill in U.S. Patent No. 4,834,022, herein incorporated by reference.
• the contoured plate reactor is approximately cylindrical in shape.
• the base of the reactor is inclined at an angle of approximately 3°-5° from the vertical and has a central platform with a recessed well.
• the thin film device is placed in the well so that the surface of the device on which the fluoropolymer is deposited does not protrude above the platform surface.
• the fluoromonomer and initiator gases are mixed in a region adjacent the cylindrical wall of the reactor and flow radially inward across the device surface where they mix, react and form a uniform fluoropolymer layer on the thin film device.
• a Monoblok ® (Monoblok is a trade mark of ASML Thermal Division, Scotts Valley, CA, USA) linear injector as described in U.S. patent no. 5,683,516 was used to apply laminar reactant and initiator gas flows at a precisely metered rate to the wafer surface as it moved on a conveyor belt under the injector body through a heated, horizontal tunnel (muffle).
• Trigonox-CTM as the initiator. This is a product of Akzo Nobel Polymer Chemicals LLC.
• a Monoblok ® linear injector was used.
• a gas being an equal weight mixture of tetrafluoroethylene (TFE) and CO 2 was flowed at a rate of 8 slm through the separator ports of the linear injector while a liquid bubbler system using N 2 gas as a carrier at 3 slm brought Trigonox-C through the center port of the injector.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Chemical & Material Sciences (AREA)
• Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
• Chemical Vapour Deposition (AREA)
• Physical Vapour Deposition (AREA)

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• 2002
  • 2002-06-21 AU AU2002310491A patent/AU2002310491A1/en not_active Abandoned
  • 2002-06-21 CN CNB028291905A patent/CN100336184C/zh not_active Expired - Fee Related
  • 2002-06-21 WO PCT/US2002/019702 patent/WO2004001832A1/en not_active Application Discontinuation
  • 2002-06-21 CA CA002487486A patent/CA2487486A1/en not_active Abandoned
  • 2002-06-21 EP EP02737569A patent/EP1516360A1/de not_active Ceased
  • 2002-06-21 RU RU2005101341/28A patent/RU2304323C2/ru not_active IP Right Cessation
• 2005
  • 2005-10-07 HK HK05108916A patent/HK1076921A1/xx not_active IP Right Cessation

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