EP1512112A4 - Verwendung von überlagerungsdiagnose für erweiterte automatische prozesssteuerung - Google Patents

Verwendung von überlagerungsdiagnose für erweiterte automatische prozesssteuerung

Info

Publication number
EP1512112A4
EP1512112A4 EP03736896A EP03736896A EP1512112A4 EP 1512112 A4 EP1512112 A4 EP 1512112A4 EP 03736896 A EP03736896 A EP 03736896A EP 03736896 A EP03736896 A EP 03736896A EP 1512112 A4 EP1512112 A4 EP 1512112A4
Authority
EP
European Patent Office
Prior art keywords
diagnostics
overlay
process control
automatic process
enhanced automatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03736896A
Other languages
English (en)
French (fr)
Other versions
EP1512112A2 (de
Inventor
Joel L Seligson
Mark Ghinovker
Pavel Izikson
Boris Simkin
John Robinson
Michael E Adel
David Tulipman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Tencor Technologies Corp
Original Assignee
KLA Tencor Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/438,962 external-priority patent/US6928628B2/en
Priority claimed from US10/438,963 external-priority patent/US7111256B2/en
Application filed by KLA Tencor Technologies Corp filed Critical KLA Tencor Technologies Corp
Publication of EP1512112A2 publication Critical patent/EP1512112A2/de
Publication of EP1512112A4 publication Critical patent/EP1512112A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
EP03736896A 2002-06-05 2003-06-05 Verwendung von überlagerungsdiagnose für erweiterte automatische prozesssteuerung Withdrawn EP1512112A4 (de)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US38628502P 2002-06-05 2002-06-05
US386285P 2002-06-05
US39584702P 2002-07-11 2002-07-11
US395847P 2002-07-11
US45668103P 2003-03-19 2003-03-19
US456681P 2003-03-19
US438963 2003-05-14
US10/438,962 US6928628B2 (en) 2002-06-05 2003-05-14 Use of overlay diagnostics for enhanced automatic process control
US10/438,963 US7111256B2 (en) 2002-06-05 2003-05-14 Use of overlay diagnostics for enhanced automatic process control
US438962 2003-05-14
PCT/US2003/017899 WO2003104929A2 (en) 2002-06-05 2003-06-05 Use of overlay diagnostics for enhanced automatic process control

Publications (2)

Publication Number Publication Date
EP1512112A2 EP1512112A2 (de) 2005-03-09
EP1512112A4 true EP1512112A4 (de) 2006-11-02

Family

ID=29741145

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03736896A Withdrawn EP1512112A4 (de) 2002-06-05 2003-06-05 Verwendung von überlagerungsdiagnose für erweiterte automatische prozesssteuerung

Country Status (3)

Country Link
EP (1) EP1512112A4 (de)
JP (1) JP4677231B2 (de)
WO (1) WO2003104929A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060117293A1 (en) * 2004-11-30 2006-06-01 Nigel Smith Method for designing an overlay mark
JP5036429B2 (ja) * 2007-07-09 2012-09-26 キヤノン株式会社 位置検出装置、露光装置、デバイス製造方法及び調整方法
US7873585B2 (en) * 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
WO2010145951A2 (en) 2009-06-17 2010-12-23 Asml Netherlands B.V. Method of overlay measurement, lithographic apparatus, inspection apparatus, processing apparatus and lithographic processing cell
NL2007088A (en) 2010-07-19 2012-01-23 Asml Netherlands Bv Method and apparatus for determining an overlay error.
JP6099626B2 (ja) * 2011-04-06 2017-03-22 ケーエルエー−テンカー コーポレイション 向上したプロセス制御のための品質測定値を提供するための方法およびシステム
NL2010971A (en) * 2012-07-10 2014-01-13 Asml Netherlands Bv Lithographic cluster system, method for calibrating a positioning device of a lithographic apparatus and measurement apparatus.
KR102287757B1 (ko) * 2015-05-26 2021-08-09 삼성전자주식회사 오버레이 교정 데이터를 수정하는 방법
US10928737B2 (en) * 2016-03-04 2021-02-23 Asml Netherlands B.V. Method for characterizing distortions in a lithographic process, lithographic apparatus, lithographic cell and computer program
WO2018197144A1 (en) * 2017-04-28 2018-11-01 Asml Netherlands B.V. Optimizing a sequence of processes for manufacturing of product units
US11378451B2 (en) 2017-08-07 2022-07-05 Kla Corporation Bandgap measurements of patterned film stacks using spectroscopic metrology
EP3454126A1 (de) * 2017-09-08 2019-03-13 ASML Netherlands B.V. Verfahren zur schätzung von überlagerung
JP7177949B2 (ja) * 2019-03-21 2022-11-24 ケーエルエー コーポレイション 半導体デバイスにおけるパラメタ安定位置ずれ計測改善
US11604063B2 (en) 2021-06-24 2023-03-14 Kla Corporation Self-calibrated overlay metrology using a skew training sample

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329334A (en) * 1993-03-02 1994-07-12 Lsi Logic Corporation Integrated circuit test reticle and alignment mark optimization method
US20020001083A1 (en) * 2000-06-30 2002-01-03 Kouwa Tabei Apparatus and method for measuring pattern alignment error

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2985587B2 (ja) * 1993-07-06 1999-12-06 松下電器産業株式会社 アライメント方法および半導体装置の製造装置
JP3248580B2 (ja) * 1999-02-16 2002-01-21 日本電気株式会社 重ね合わせ精度測定マークおよび重ね合わせ精度測定方法
US6612159B1 (en) * 1999-08-26 2003-09-02 Schlumberger Technologies, Inc. Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers
JP2002124458A (ja) * 2000-10-18 2002-04-26 Nikon Corp 重ね合わせ検査装置および重ね合わせ検査方法
US6694498B2 (en) * 2001-12-13 2004-02-17 Internationl Business Machines Corporation Feed-forward lithographic overlay offset method and system
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6664121B2 (en) * 2002-05-20 2003-12-16 Nikon Precision, Inc. Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329334A (en) * 1993-03-02 1994-07-12 Lsi Logic Corporation Integrated circuit test reticle and alignment mark optimization method
US20020001083A1 (en) * 2000-06-30 2002-01-03 Kouwa Tabei Apparatus and method for measuring pattern alignment error

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
STARIKOV A ET AL: "ACCURACY OF OVERLAY MEASUREMENTS: TOOL AND MARK ASYMMETRY EFFECTS", OPTICAL ENGINEERING, SOC. OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS. BELLINGHAM, US, vol. 31, no. 6, 1 June 1992 (1992-06-01), pages 1298 - 1309, XP000278264, ISSN: 0091-3286 *

Also Published As

Publication number Publication date
JP4677231B2 (ja) 2011-04-27
JP2005529488A (ja) 2005-09-29
EP1512112A2 (de) 2005-03-09
WO2003104929A3 (en) 2004-06-24
WO2003104929A2 (en) 2003-12-18

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Inventor name: TULIPMAN, DAVID

Inventor name: ADEL, MICHAEL, E.

Inventor name: ROBINSON, JOHN

Inventor name: SIMKIN, BORIS

Inventor name: IZIKSON, PAVEL

Inventor name: GHINOVKER, MARK

Inventor name: SELIGSON, JOEL, L.

RIN1 Information on inventor provided before grant (corrected)

Inventor name: TULIPMAN, DAVID

Inventor name: ADEL, MICHAEL, E.

Inventor name: ROBINSON, JOHN

Inventor name: SIMKIN, BORIS

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