WO2003104929A3 - Use of overlay diagnostics for enhanced automatic process control - Google Patents

Use of overlay diagnostics for enhanced automatic process control Download PDF

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Publication number
WO2003104929A3
WO2003104929A3 PCT/US2003/017899 US0317899W WO03104929A3 WO 2003104929 A3 WO2003104929 A3 WO 2003104929A3 US 0317899 W US0317899 W US 0317899W WO 03104929 A3 WO03104929 A3 WO 03104929A3
Authority
WO
WIPO (PCT)
Prior art keywords
overlay
overlay target
metric
image information
target
Prior art date
Application number
PCT/US2003/017899
Other languages
French (fr)
Other versions
WO2003104929A2 (en
Inventor
Joel L Seligson
Mark Ghinovker
Pavel Izikson
Boris Simkin
John Robinson
Michael E Adel
David Tulipman
Original Assignee
Kla Tencor Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/438,963 external-priority patent/US7111256B2/en
Priority claimed from US10/438,962 external-priority patent/US6928628B2/en
Application filed by Kla Tencor Tech Corp filed Critical Kla Tencor Tech Corp
Priority to JP2004511937A priority Critical patent/JP4677231B2/en
Priority to EP03736896A priority patent/EP1512112A4/en
Publication of WO2003104929A2 publication Critical patent/WO2003104929A2/en
Publication of WO2003104929A3 publication Critical patent/WO2003104929A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.
PCT/US2003/017899 2002-06-05 2003-06-05 Use of overlay diagnostics for enhanced automatic process control WO2003104929A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004511937A JP4677231B2 (en) 2002-06-05 2003-06-05 Using overlay diagnostics for improved automated process control.
EP03736896A EP1512112A4 (en) 2002-06-05 2003-06-05 Use of overlay diagnostics for enhanced automatic process control

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US38628502P 2002-06-05 2002-06-05
US60/386,285 2002-06-05
US39584702P 2002-07-11 2002-07-11
US60/395,847 2002-07-11
US45668103P 2003-03-19 2003-03-19
US60/456,681 2003-03-19
US10/438,963 US7111256B2 (en) 2002-06-05 2003-05-14 Use of overlay diagnostics for enhanced automatic process control
US10/438,962 US6928628B2 (en) 2002-06-05 2003-05-14 Use of overlay diagnostics for enhanced automatic process control
US10/438,963 2003-05-14
US10/438,962 2003-05-14

Publications (2)

Publication Number Publication Date
WO2003104929A2 WO2003104929A2 (en) 2003-12-18
WO2003104929A3 true WO2003104929A3 (en) 2004-06-24

Family

ID=29741145

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/017899 WO2003104929A2 (en) 2002-06-05 2003-06-05 Use of overlay diagnostics for enhanced automatic process control

Country Status (3)

Country Link
EP (1) EP1512112A4 (en)
JP (1) JP4677231B2 (en)
WO (1) WO2003104929A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060117293A1 (en) * 2004-11-30 2006-06-01 Nigel Smith Method for designing an overlay mark
JP5036429B2 (en) * 2007-07-09 2012-09-26 キヤノン株式会社 Position detection apparatus, exposure apparatus, device manufacturing method, and adjustment method
US7873585B2 (en) * 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
JP5391333B2 (en) * 2009-06-17 2014-01-15 エーエスエムエル ネザーランズ ビー．ブイ． Overlay measuring method, lithography apparatus, inspection apparatus, processing apparatus, and lithography processing cell
JP6008851B2 (en) * 2010-07-19 2016-10-19 エーエスエムエル ネザーランズ ビー．ブイ． Method and apparatus for determining overlay error
CN103582819B (en) 2011-04-06 2016-09-14 科磊股份有限公司 For providing the method and system of the quality metric of improved process control
NL2010971A (en) * 2012-07-10 2014-01-13 Asml Netherlands Bv Lithographic cluster system, method for calibrating a positioning device of a lithographic apparatus and measurement apparatus.
KR102287757B1 (en) * 2015-05-26 2021-08-09 삼성전자주식회사 Methods of Revising an Overlay Correction Data
WO2017148759A1 (en) * 2016-03-04 2017-09-08 Asml Netherlands B.V. Method for characterizing distortions in a lithographic process, lithographic apparatus, lithographic cell and computer program
WO2018197144A1 (en) * 2017-04-28 2018-11-01 Asml Netherlands B.V. Optimizing a sequence of processes for manufacturing of product units
US11378451B2 (en) 2017-08-07 2022-07-05 Kla Corporation Bandgap measurements of patterned film stacks using spectroscopic metrology
EP3454126A1 (en) * 2017-09-08 2019-03-13 ASML Netherlands B.V. Method for estimating overlay
WO2020190318A1 (en) * 2019-03-21 2020-09-24 Kla Corporation Parameter-stable misregistration measurement amelioration in semiconductor devices
US11604063B2 (en) * 2021-06-24 2023-03-14 Kla Corporation Self-calibrated overlay metrology using a skew training sample

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030115556A1 (en) * 2001-12-13 2003-06-19 International Business Machines Corporation Feed-forward lithographic overlay offset method and system
US6612159B1 (en) * 1999-08-26 2003-09-02 Schlumberger Technologies, Inc. Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers
US20030223630A1 (en) * 2002-02-15 2003-12-04 Kla-Tencor Corporation Overlay metrology and control method
US6664121B2 (en) * 2002-05-20 2003-12-16 Nikon Precision, Inc. Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
US5329334A (en) * 1993-03-02 1994-07-12 Lsi Logic Corporation Integrated circuit test reticle and alignment mark optimization method
JP2985587B2 (en) * 1993-07-06 1999-12-06 松下電器産業株式会社 Alignment method and semiconductor device manufacturing apparatus
JP3248580B2 (en) * 1999-02-16 2002-01-21 日本電気株式会社 Registration accuracy measurement mark and registration accuracy measurement method
JP2002025882A (en) * 2000-06-30 2002-01-25 Hitachi Electronics Eng Co Ltd Device and method for measuring overlap error of pattern
JP2002124458A (en) * 2000-10-18 2002-04-26 Nikon Corp Overlap inspection device and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6612159B1 (en) * 1999-08-26 2003-09-02 Schlumberger Technologies, Inc. Overlay registration error measurement made simultaneously for more than two semiconductor wafer layers
US20030115556A1 (en) * 2001-12-13 2003-06-19 International Business Machines Corporation Feed-forward lithographic overlay offset method and system
US20030223630A1 (en) * 2002-02-15 2003-12-04 Kla-Tencor Corporation Overlay metrology and control method
US6664121B2 (en) * 2002-05-20 2003-12-16 Nikon Precision, Inc. Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1512112A4 *

Also Published As

Publication number Publication date
JP2005529488A (en) 2005-09-29
WO2003104929A2 (en) 2003-12-18
JP4677231B2 (en) 2011-04-27
EP1512112A4 (en) 2006-11-02
EP1512112A2 (en) 2005-03-09

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