EP1506329A1 - Procedes et appareil de surveillance de la qualite de depot au cours d'operations de galvanoplastie effectuees a l'aide d'un masque de contact adaptable - Google Patents

Procedes et appareil de surveillance de la qualite de depot au cours d'operations de galvanoplastie effectuees a l'aide d'un masque de contact adaptable

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Publication number
EP1506329A1
EP1506329A1 EP03726805A EP03726805A EP1506329A1 EP 1506329 A1 EP1506329 A1 EP 1506329A1 EP 03726805 A EP03726805 A EP 03726805A EP 03726805 A EP03726805 A EP 03726805A EP 1506329 A1 EP1506329 A1 EP 1506329A1
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EP
European Patent Office
Prior art keywords
mask
substrate
layer
deposition
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03726805A
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German (de)
English (en)
Inventor
Gang Zhang
Adam L. Cohen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Southern California USC
Original Assignee
University of Southern California USC
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Filing date
Publication date
Application filed by University of Southern California USC filed Critical University of Southern California USC
Publication of EP1506329A1 publication Critical patent/EP1506329A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00—Processes of additive manufacturing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/003—3D structures, e.g. superposed patterned layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/243—Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads

Definitions

  • Embodiments of this invention relate to the field of electrochemical fabrication and to the associated electrochemical deposition of materials, some of which involve the use of masks for selective patterning operations (e.g. selective electrochemical deposition operations) according to desired cross-sectional configurations and in some embodiments to the build up of multi-layer three-dimensional structures from a plurality of adhered layers of deposited material.
  • a technique for forming three-dimensional structures (e.g. parts, components, devices, and the like) from a plurality of adhered layers was invented by Adam L. Cohen and is known as Electrochemical Fabrication. It is being commercially pursued by MEMGen ® Corporation of Burbank, California under the name EFABTM. This technique was described in US Patent No. 6,027,630, issued on February 22, 2000.
  • This electrochemical deposition technique allows the selective deposition of a material using a unique masking technique that involves the use of a mask that includes patterned conformable material on a support structure that is independent of the substrate onto which plating will occur.
  • the conformable portion of the mask When desiring to perform an electrodeposition using the mask, the conformable portion of the mask is brought into contact with a substrate while in the presence of a plating solution such that the contact of the conformable portion of the mask to the substrate inhibits deposition at selected locations.
  • these masks might be genericaily called conformable contact masks; the masking technique may be genericaily called a conformable contact mask plating process. More specifically, in the terminology of MEMGen ® Corporation of Burbank, California such masks have come to be known as INSTANT MASKSTM and the process known as INSTANT MASKINGTM or INSTANT MASKTM plating. Selective depositions using conformable contact mask plating may be used to form single layers of material or may be used to form multilayer structures.
  • the electrochemical deposition process may be carried out in a number of different ways as set forth in the above patent and publications. In one form, this process involves the execution of three separate operations during the formation of each layer of the structure that is to be formed: 1. Selectively depositing at least one material by electrodeposition upon one or more desired regions of a substrate.
  • one or more additional layers may be formed adjacent to the immediately preceding layer and adhered to the smoothed surface of that preceding layer. These additional layers are formed by repeating the first through third operations one or more times wherein the formation of each subsequent layer treats the previously formed layers and the initial substrate as a new and thickening substrate.
  • CC masks are first formed.
  • the CC masks include a support structure onto which a patterned conformable dielectric material is adhered or formed.
  • the conformable material for each mask is shaped in accordance with a particular cross-section of material to be plated. At least one CC mask is needed for each unique cross-sectional pattern that is to be plated.
  • the support for a CC mask is typically a plate-like structure formed of a metal that is to be selectively electroplated and from which material to be plated will be dissolved.
  • the support will act as an anode in an electroplating process.
  • the support may instead be a porous or otherwise perforated material through which deposition material will pass during an electroplating operation on its way from a distal anode to a deposition surface.
  • the entire structure is referred to as the CC mask while the individual plating masks may be referred to as "submasks".
  • the individual plating masks may be referred to as "submasks".
  • the conformable portion of the CC mask is placed in registration with and pressed against a selected portion of the substrate (or onto a previously formed layer or onto a previously deposited portion of a layer) on which deposition is to occur.
  • the pressing together of the CC mask and substrate occur in such a way that all openings, in the conformable portions of the CC mask contain plating solution.
  • the conformable material of the CC mask that contacts the substrate acts as a barrier to electrodeposition while the openings in the CC mask that are filled with electroplating solution act as pathways for transferring material from an anode (e.g.
  • Figure 1 (a) shows a side view of a CC mask 8 consisting of a conformable or deformable (e.g. elastomeric) insulator 10 patterned on an anode 12. The anode has two functions.
  • Figure 1 (a) also depicts a substrate 6 separated from mask 8.
  • CC mask plating selectively deposits material 22 onto a substrate 6 by simply pressing the insulator against the substrate then electrodepositing material through apertures 26a and 26b in the insulator as shown in Figure 1 (b). After deposition, the CC mask is separated, preferably non- destructively, from the substrate 6 as shown in Figure 1 (c).
  • the CC mask plating process is distinct from a "through-mask" plating process in that in a through-mask plating process the separation of the masking material from the substrate would occur destructively.
  • CC mask plating deposits material selectively and simultaneously over the entire layer.
  • the plated region may consist of one or more isolated plating regions where these isolated plating regions may belong to a single structure that is being formed or may belong to multiple structures that are being formed simultaneously. In CC mask plating as individual masks are not intentionally destroyed in the removal process, they may be usable in multiple plating operations.
  • Figures 1 (d) - 1 (f) show an example of a CC mask and CC mask plating.
  • Figure 1 (d) shows an anode 12' separated from a mask 8' that comprises a patterned conformable material 10' and a support structure 20.
  • Figure 1 (d) also depicts substrate 6 separated from the mask 8'.
  • Figure 1 (e) illustrates the mask 8' being brought into contact with the substrate 6.
  • Figure 1 (f) illustrates the deposit 22' that results from conducting a current from the anode 12' to the substrate 6.
  • Figure 1 (g) illustrates the deposit 22' on substrate 6 after separation from mask 8'.
  • an appropriate electrolyte is located between the substrate 6 and the anode 12' and a current of ions coming from one or both of the solution and the anode are conducted through the opening in the mask to the substrate where material is deposited.
  • This type of mask may be referred to as an anodeless INSTANT MASKTM (AIM) or as an anodeless conformable contact (ACC) mask.
  • CC mask plating allows CC masks to be formed completely separate from the fabrication of the substrate on which plating is to occur (e.g. separate from a three-dimensional (3D) structure that is being formed).
  • CC masks may be formed in a variety of ways, for example, a photolithographic process may be used.
  • Figures 2(a) - 2(f) show that the process involves deposition of a first material 2 which is a sacrificial material and a second material 4 which is a structural material.
  • the CC mask 8 in this example, includes a patterned conformable material (e.g. an elastomeric dielectric material) 10 and a support 12 which is made from deposition material 2.
  • the conformal portion of the CC mask is pressed against substrate 6 with a plating solution 14 located within the openings 16 in the conformable material 10.
  • An electric current, from power supply 18, is then passed through the plating solution 14 via (a) support 12 which doubles as an anode and (b) substrate 6 which doubles as a cathode.
  • Figure 2(a) illustrates that the passing of current causes material 2 within the plating solution and material 2 from the anode 12 to be selectively transferred to and plated on the cathode 6.
  • the CC mask 8 is removed as shown in Figure 2(b).
  • Figure 2(c) depicts the second deposition material 4 as having been blanket-deposited (i.e. non-selectively deposited) over the previously deposited first deposition material 2 as well as over the other portions of the substrate 6.
  • the blanket deposition occurs by electroplating from an anode (not shown), composed of the second material, through an appropriate plating solution (not shown), and to the cathode/substrate 6.
  • the entire two-material layer is then planarized to achieve precise thickness and flatness as shown in Figure 2(d).
  • the multi-layer structure 20 formed of the second material 4 i.e. structural material
  • first material 2 i.e. sacrificial material
  • the embedded structure is etched to yield the desired device, i.e. structure 20, as shown in Figure 2(f).
  • FIG. 3(a) - 3(c) Various components of an exemplary manual electrochemical fabrication system 32 are shown in Figures 3(a) - 3(c).
  • the system 32 consists of several subsystems 34, 36, 38, and 40.
  • the substrate holding subsystem 34 is depicted in the upper portions of each of Figures 3(a) to 3(c) and includes several components: (1 ) a carrier 48, (2) a metal substrate 6 onto which the layers are deposited, and (3) a linear slide 42 capable of moving the substrate 6 up and down relative to the carrier 48 in response to drive force from actuator 44.
  • Subsystem 34 also includes an indicator 46 for measuring differences in vertical position of the substrate which may be used in setting or determining layer thicknesses and/or deposition thicknesses.
  • the subsystem 34 further includes feet 68 for carrier 48 which can be precisely mounted on subsystem 36.
  • the CC mask subsystem 36 shown in the lower portion of Figure 3(a) includes several components: (1 ) a CC mask 8 that is actually made up of a number of CC masks (i.e. submasks) that share a common support/anode 12, (2) precision X-stage 54, (3) precision Y-stage 56, (4) frame 72 on which the feet 68 of subsystem 34 can mount, and (5) a tank 58 for containing the electrolyte 16.
  • Subsystems 34 and 36 also include appropriate electrical connections (not shown) for connecting to an appropriate power source for driving the CC masking process.
  • the blanket deposition subsystem 38 is shown in the lower portion of Figure 3(b) and includes several components: (1 ) an anode 62, (2) an electrolyte tank 64 for holding plating solution 66, and (3) frame 74 on which the feet 68 of subsystem 34 may sit. Subsystem 38 also includes appropriate electrical connections (not shown) for connecting the anode to an appropriate power supply for driving the blanket deposition process.
  • the planarization subsystem 40 is shown in the lower portion of Figure 3(c) and includes a lapping plate 52 and associated motion and control systems (not shown) for planarizing the depositions.
  • Another method for forming microstructures from electroplated metals i.e. using electrochemical fabrication techniques is taught in US Patent No. 5,190,637 to Henry Guckel, entitled “Formation of Microstructures by Multiple Level Deep X-ray Lithography with Sacrificial Metal layers. This patent teaches the formation of metal structure utilizing mask exposures. A first layer of a primary metal is electroplated onto an exposed plating base to fill a void in a photoresist, the photoresist is then removed and a secondary metal is electroplated over the first layer and over the plating base.
  • the exposed surface of the secondary metal is then machined down to a height which exposes the first metal to produce a flat uniform surface extending across the both the primary and secondary metals.
  • Formation of a second layer may then begin by applying a photoresist layer over the first layer and then repeating the process used to produce the first layer. The process is then repeated until the entire structure is formed and the secondary metal is removed by etching.
  • the photoresist is formed over the plating base or previous layer by casting and the voids in the photoresist are formed by exposure of the photoresist through a patterned mask via X-rays or UV radiation.
  • a need remains for enhanced plating quality diagnostics for use with conformable contract mask plating and particularly for use when multiple layers will be deposited one after the other to form structures from a plurality of adhered layers.
  • a further need remains for minimizing wasted time, effort, and material when diagnostics indicate that a failed or problematic deposition has occurred or has probably occurred.
  • an electrochemical fabrication process for producing a three-dimensional structure from a plurality of adhered layers includes: (A) selectively depositing at least a portion of a layer onto the substrate, wherein the substrate may comprise previously deposited material; (B) forming a plurality of layers such that successive layers are formed adjacent to and adhered to previously deposited layers, wherein said forming comprises repeating operation (A) a plurality of times; wherein at least a plurality of the selective depositing operations comprise: (1 ) locating a mask on, or in proximity to, a substrate; (2) in presence of a plating solution, conducting an electric current between an anode and the substrate through the at least one opening in the mask, such that a selected deposition material is deposited onto the substrate to form at least a portion of a layer; and (3) removing the mask from the substrate; and wherein during formation of a given layer, a voltage between the anode and cathode is monitored.
  • An electrochemical fabrication process for producing a three-dimensional structure from a plurality of adhered layers comprising: (A) selectively depositing at least a portion of a layer onto the substrate, wherein the substrate may comprise previously deposited material; (B) forming a plurality of layers such that successive layers are formed adjacent to and adhered to previously deposited layers, wherein said forming comprises repeating operation (A) a plurality of times; wherein at least a plurality of the selective depositing operations comprise: (1 ) locating a mask on, or in proximity to, a substrate; (2) in presence of a plating solution, conducting an electric current between an anode and the substrate through the at least one opening in the mask, such that a selected deposition material is deposited onto the substrate to form at least a portion of a layer; and (3) removing the mask from the substrate; and wherein during, or after, formation of a given layer, the layer is inspected or formation parameters are compared to anticipated parameter values such that if it is determined that the layer was not formed correctly, at
  • a conformable contact masking process for producing a structure includes: (A) supplying at least one preformed mask that comprises a patterned dielectric material that includes at least one opening through which deposition can take place during the formation of at least a portion of a layer, and wherein the at least one mask comprises a support structure that supports the patterned dielectric material; and (B) selectively depositing at least a portion of a layer onto a substrate, comprising: (i) contacting the substrate and the dielectric material of the preformed mask; (ii) in presence of a plating solution, conducting an electric current through the at least one opening in the selected mask between an anode and the substrate such that a selected deposition material is deposited onto the substrate to form at least a portion of a layer; and (iii) separating the selected preformed mask from the substrate; wherein during formation of at a layer, a voltage between the anode and cathode is monitored.
  • a conformable contact masking process for producing a structure includes: (A) supplying at least one preformed mask that comprises a patterned dielectric material that includes at least one opening through which deposition can take place during the formation of at least a portion of a layer, and wherein the at least one mask comprises a support structure that supports the patterned dielectric material; and (B) selectively depositing at least a portion of a layer onto a substrate, comprising: (i) contacting the substrate and the dielectric material of the preformed mask; (ii) in presence of a plating solution, conducting an electric current through the at least one opening in the selected mask between an anode and the substrate such that a selected deposition material is deposited onto the substrate to form at least a portion of a layer; and (iii) separating the selected preformed mask from the substrate; wherein during, or after, formation of a given layer, the layer is inspected, or formation parameters are compared to anticipated parameter values, such that if it is determined that the layer
  • an electrochemical fabrication apparatus for producing a three-dimensional structure from a plurality of adhered layers, inlcudes: (A) means for selectively depositing at least a portion of a layer onto a substrate, wherein the substrate may comprise previously deposited material; and (B) means for forming a plurality of layers such that each successive layer is formed adjacent to and adhered to a previously deposited layer, wherein said forming comprises repeating operation (A) a plurality of times; wherein the means for selectively depositing comprises: (1 ) means for locating, or placing in proximity, a patterned mask and the substrate; (2) means for conducting, in presence of a plating solution, an electric current through the at least one opening in the selected mask between an anode and the substrate such that the selected deposition material is deposited onto the substrate to form at least a portion of a layer; and (3) means for removing the selected preformed mask from the substrate; and (C) means for monitoring a voltage between the anode and cathode during selective deposition
  • an electrochemical fabrication apparatus for producing a three-dimensional structure from a plurality of adhered layers, includes: (A) means for selectively depositing at least a portion of a layer onto a substrate, wherein the substrate may comprise previously deposited material; and (B) means for forming a plurality of layers such that each successive layer is formed adjacent to and adhered to a previously deposited layer, wherein said forming comprises repeating operation (A) a plurality of times; wherein the means for selectively depositing comprises: (1) means for locating, or placing in proximity, a patterned mask and the substrate; (2) means for conducting, in presence of a plating solution, an electric current through the at least one opening in the selected mask between an anode and the substrate such that the selected deposition material is deposited onto the substrate to form at least a portion of a layer; and (3) means for removing the selected preformed mask from the substrate; and (C) means for inspecting formation parameters or comparing formation parameters to anticipated parameter values; and (D) means for removing at
  • Figures 1 (a) - 1 (c) schematically depict side views of various stages of a CC mask plating process
  • Figures 1 (d) - (g) schematically depict a side views of various stages of a CC mask plating process using a different type of CC mask
  • Figures 2(a) - 2(f) schematically depict side views of various stages of an electrochemical fabrication process as applied to the formation of a particular structure where a sacrificial material is selectively deposited while a structural material is blanket deposited.
  • Figures 3(a) - 3(c) schematically depict side views of various example subassemblies that may be used in manually implementing the electrochemical fabrication method depicted in Figures 2(a) - 2(f).
  • Figures 4(a) - 4(i) schematically depict the formation of a first layer of a structure using adhered mask plating where the blanket deposition of a second material overlays both the openings between deposition locations of a first material and the first material itself.
  • Figure 5 shows combined anodic and cathodic polarization curves for a particular copper bath operated at 20 °C and at 50 °C.
  • Figures 6(a) - 6(c) depict plots of cell voltage versus plating time for a first plating bath when three different deposition results have occurred.
  • Figures 7(a) and 7(b) depict plots of cell voltage versus plating time for a first plating bath when two different deposition results have occurred.
  • Figure 8 depicts a copper deposits where spiking has occurred.
  • Figures 1 (a) - 1 (g), 2(a) - 2(f), and 3(a) - 3(c) illustrate various features of one form of electrochemical fabrication that are known.
  • Other electrochemical fabrication techniques are set forth in the '630 patent referenced above, in the various previously incorporated publications, in various other patents and patent applications incorporated herein by reference, still others may be derived from combinations of various approaches described in these publications, patents, and applications, or are otherwise known or ascertainable by those of skill in the art from the teachings set forth herein. All of these techniques may be combined with those of the various embodiments of various aspects of the invention to yield enhanced embodiments. Still other embodiments be may derived from combinations of the various embodiments explicitly set forth herein.
  • Figures 4(a)-4(i) illustrate various stages in the formation of a single layer of a multi-layer fabrication process where a second metal is deposited on a first metal as well as in openings in the first metal where its deposition forms part of the layer.
  • a side view of a substrate 82 is shown, onto which patternable photoresist 84 is cast as shown in Figure 4(b).
  • a pattern of resist is shown that results from the curing, exposing, and developing of the resist.
  • the patterning of the photoresist 84 results in openings or apertures 92(a) - 92(c) extending from a surface 86 of the photoresist through the thickness of the photoresist to surface 88 of the substrate 82.
  • a metal 94 e.g. nickel
  • the photoresist has been removed (i.e. chemically stripped) from the substrate to expose regions of the substrate 82 which are not covered with the first metal 94.
  • a second metal 96 (e.g., silver) is shown as having been blanket electroplated over the entire exposed portions of the substrate 82 (which is conductive) and over the first metal 94 (which is also conductive).
  • Figure 4(g) depicts the completed first layer of the structure which has resulted from the planarization of the first and second metals down to a height that exposes the first metal and sets a thickness for the first layer.
  • Figure 4(h) the result of repeating the process steps shown in Figures 4(b) - 4 (g) several times to form a multi-layer structure are shown where each layer consists of two materials. For most applications, one of these materials is removed as shown in Figure 4(i) to yield a desired 3-D structure 98 (e.g. component or device).
  • the various embodiments, alternatives, and techniques disclosed herein may have application to proximity masks and masking operations (i.e. operations that use masks that at least partially selectively shield a substrate by their proximity to the substrate even if contact is not made), non-conformable masks and masking operations (i.e. masks and operations based on masks whose contact surfaces are not significantly conformable), and adhered masks and masking operations (masks and operations that use masks that are adhered to a substrate onto which selective deposition or etching is to occur as opposed to only being contacted to it).
  • proximity masks and masking operations i.e. operations that use masks that at least partially selectively shield a substrate by their proximity to the substrate even if contact is not made
  • non-conformable masks and masking operations i.e. masks and operations based on masks whose contact surfaces are not significantly conformable
  • adhered masks and masking operations masks and operations that use masks that are adhered to a substrate onto which selective deposition or etching
  • a basic standard plating configuration (i.e. non-CC mask plating configuration) includes an anode and a cathode which are immersed in a plating bath.
  • the distance between the anode and cathode is at least 1 mm.
  • a power source provides a pre-set current passing through the plating cell so that the anode metal usually dissolves into the plating bath and the metal ions in the plating bath are reduced at the cathode to become a metallic deposit.
  • the plating bath is usually operated at a constant temperature some wherein the range of between 20 - 60°C.
  • the plating bath is agitated mechanically or by compressed air to ensure that fresh plating solution is delivered to the cathode and that the products of the electrochemical reactions are removed from the electrodes into the bulk solution.
  • Through-mask plating is a selective plating process since the substrate (cathode) is patterned by a thin non-conductive material (e.g. a patterned photoresist). Otherwise, its plating configuration is the same as that of standard plating process as outlined above. As such, through-mask plating, for the purposes herein, may be considered a selective form of standard plating.
  • CC mask plating is different from normal and through-mask plating in several aspects.
  • the plating bath is trapped in a closed volume defined by the substrate, the side walls of the conformable material, and the anode. Examples of such closed volumes 26a and 26b are depicted in Figure 1 (b).
  • Another form of CC mask plating may involve the use of a porous support and a distal anode.
  • the barrier presented by the support portion of the CC mask though allowing at least some ion exchange, may present a sufficient hindrance to the exchange of some components of the plating solution that the solution in the deposition region may still be considered to be substantially isolated from the bulk solution. This trapping results in little or no mass exchange between the volume of solution in the plating region and the bulk solution and as such no or little fresh solution with proper additives can be supplied into the microspace and no or little reaction products can be removed.
  • a preferred form of CC mask plating involves closed volumes where at least one of the dimensions of at least one of the plating volumes is on the order of tens of microns (e.g. 20 to 100 ⁇ m) or less.
  • this form of CC mask plating may be considered to be a microbath plating process (i.e. micro-CC mask plating).
  • the preferred separation between the anode and cathode is presently between about 20 ⁇ m and about 100 ⁇ m, and more preferably between about 40 and 80 ⁇ m. As such, regardless of the size of the area being deposited, these preferred embodiments may be considered to be micro-CC mask plating processes. Of course thinner separation distances (e.g. 10 ⁇ m or less) and thicker separation distances (300 ⁇ m or more) are possible. Due to this close spacing between anode and cathode, deposition processes at the cathode and dissolution processes at the anode, unlike standard plating, are highly interacting.
  • Agitating the plating bath is not necessarily desirable in electrochemical fabrication due potentially to the high interaction between anode and cathode processes and due to the believed enhanced risk of shorting when agitation is used.
  • Shorting refers to a portion of the deposition height bridging the space between the cathode and the anode prior to the lapse of the desired deposition time, in which case the current is directed almost solely through deposited conductive material as opposed to flowing primarily through the plating bath as intended such that the continuing of deposition is inhibited.
  • a pyrophosphate bath at high temperature i.e. above around 43 °C to
  • CC mask plating has its own characteristics and the conventional wisdom associated with standard plating processes may be more of a hindrance than a help in developing commercially viable CC mask plating processes and systems.
  • the following Table provides a detailed comparison of various aspects of the two forms of standard plating (i.e. non-selective and through-mask plating) and micro-CC mask plating.
  • monitored cell voltage during the CC mask plating process can be correlated to various aspects of the quality of the depositions being made.
  • This cell voltage information alone or in combination with visual inspection, can be used to judge the acceptability of a given deposit that is being made or has been made. If the deposit is judged to be acceptable the process can be allowed to continue to the next deposition or other operation. If, on the other hand, the deposit is judged to be unacceptable, the process can be detoured to remove all or a portion of the unacceptable deposit and then redeposition can be attempted one or more times until an acceptable deposition has been made after which the process can continue along its normal course.
  • the cell voltage is the potential between the anode and the cathode at a certain current density. It depends on the potential at the two electrodes, size and spacing of anode and cathode, the applied current, and the resistivity of the bath.
  • the cell voltage can be expressed as
  • Vcell V an ode + Vbath + V ca thode
  • V an ode and V ca t h ode are the voltage drops at the anode and cathode due to polarization of the electrodes when passing a current through the bath
  • V b at h is the voltage drop in the bath when a current passes through the bath between the anode and the cathode.
  • Vbat h can be calculated from
  • Vbath IR
  • I the total current
  • R the effective ohmic resistance of the bath. Since the gap between the anode and cathode is typically quite small (between about 25 - 100 ⁇ m), and the specific conductivity of several known plating baths are on the order of 10 "1 , the voltage drop for a 20 mA/cm 2 current is on the order of tenths of millivolts to millivolts.
  • the voltage drop across a well behaved bath may be considered to be negligible compared to the voltage drops associated with the anode (Vanode) and the cathode (Vcat h ode)-
  • the approximate value of the cell voltage can be estimated.
  • Anodic and cathodic polarization curves measured in a plating bath indicate the potentials of the anode and the cathode at different current densities.
  • Figure 5 shows a combined example of anodic and cathodic polarization curves measured in a copper plating bath (i.e.
  • the current supplied between the anode and the cathode is based on a known open area (i.e. plating area) of the conformable contact mask so that the total current supplied results in an average current density at the cathode that is equal to A flash deposit is an unwanted additional deposit that extends beyond the intended masking area.
  • the actual cathodic area is larger than expected and since the total current is constant, the actual current density at the cathode is less than expected. From the polarization curve in Figure 5, it can be seen that the cathodic potential will become more positive when the current density decreases, which in turn causes the overall cell voltage to decrease.
  • Fig. 7(a) shows a normal cell voltage
  • the cell voltage in Fig. 7(b) is lower than the normal value.
  • the deposition process can be monitored wherein problems may be recognized during deposition or after the completion of a deposition. Based on an analysis of the resulting voltage curves in comparison to an anticipated curve or in comparison to a predefined acceptability or rejection criteria, a decision can be made as to whether or not the formation process can continue on course, whether the process should be aborted, or whether some form of remedial or corrective action should be taken. Problem detection may occur by operator review and analysis of one or more monitored electric signals (e.g. voltages), by automated system recognition, or by a combination of the two. Depending on the level of automation of the system and the believed severity of the problem, remedial action may be performed manually by an operator or under automated system control and it may involve a number of different operations:
  • Visual or other secondary inspections may be performed to confirm that a problem occurred or to determine the severity of the problem so as to aid in making decisions on the most appropriate forms of additional remedial action to take, if any;
  • the offending deposition is still underway at the time of problem recognition, i. it may be aborted; or ii. it may be allowed to continue for a time; (3) One or more additional depositions may be allowed to occur (e.g. to ensure full lateral support of the deposited structure)
  • Figure 6(a) is based on the Cu-P plating bath while Figure 7(a) is based on a UNICHROME plating bath having the optimal formulation as recommended by Atotech. These curves were recorded on a strip chart recorder during actual plating. Under the conditions used, a normal plating process shows a smooth, stable curve of cell voltage vs. time. In addition, the cell voltage remained substantially constant (i.e. remained in a narrow range).
  • FIG. 6(c) An example for a plating process failure is shown in Figure 6(c) where the large cell voltage change and instability of the cell voltage indicate that an improper plating operation is occurring and that the coating being applied will be lacking in one or more of the following: (1 ) the desired thickness, (2) desired uniformity, (3) desired bonding to the substrate, and/or (4) some other desired structural property.
  • Shorting can result from variations in deposit thickness.
  • An SEM image of a copper layer produced by conformable contact mask plating with a deposition time of 30 minutes is shown in Figure 8.
  • Many spikes 102 can be seen around the edges of the copper deposit 104. The big spikes 102 are higher than the rest of deposit.
  • the plating process can not proceed because the current is conducted through the lower resistance metal path instead of through the electrolyte.
  • the cell voltage immediately drops to zero.
  • Fig. 6(b) shows a plot of cell voltage versus time where shorting occurred in less than the anticipated plating time.
  • a trimming process (e.g. planarization process by mechanical lapping or by CMP) may be implemented to remove all of, or just a portion of, the offending deposit.
  • Complete or partial redeposition of the offending pattern may be undertaken i. the same mask may be used in one or more subsequent attempts; or ii an alternate mask may be used on one or more subsequent attempts; and (6) If an optimal redeposition cannot be obtained, within a certain number of attempts, an automated system may be programmed to interrupt the formation process, pending operator intervention or to continue with the formation process while leaving behind an appropriate log of the issues encountered and remedial steps attempted.
  • Various embodiments of the present invention may be implemented using a single rejection criteria (e.g. shorting recognition) or using multiple rejection criteria. Each rejection criteria used may result in execution of the same remedial process or different rejection criteria may result in implementation of different remedial actions. In some embodiments remedial action may involve each of operations (1 ) to (6) as noted above.
  • trimming operations may involve anodic etching as opposed to or in addition to other trimming processes.
  • Various other problem recognition possibilities and remedial operation possibilities, and combinations will be apparent to those of skill in the art after review of the teachings herein.
  • Various other embodiments of the present invention exist. Some of these embodiments may be based on a combination of the teachings herein with various teachings incorporated herein by reference. Some embodiments may not use any blanket deposition process and/or they may not use a planarization process. Some embodiments may involve the selective deposition of a plurality of different materials on a single layer or on different layers. Some embodiments may use blanket depositions processes that are not electrodeposition processes.
  • Some embodiments may use selective deposition processes on some layers that are not conformable contact masking processes and are not even electrodeposition processes. Some embodiments may use non-conformable masks, proximity masks, and/or adhered masks for selective patterning operations. Some embodiments may use nickel as a structural material while other embodiments may use different materials such as gold, silver, or any other electrodepositable materials that can be separated from the selected sacrificial material (e.g. copper and/or some other sacrificial material). Some embodiments may use copper as the structural material with or without a sacrificial material. Some embodiments may remove a sacrificial material while other embodiments may not.
  • sacrificial material e.g. copper and/or some other sacrificial material
  • the anode may be different from the conformable contact mask support and the support may be a porous structure or other perforated structure.
  • Some embodiments may use multiple conformable contact masks with different patterns so as to deposit different selective patterns of material on different layers and/or on different portions of a single layer.
  • the depth of deposition will be enhanced by pulling the conformable contact mask away from the substrate as deposition is occurring in a manner that allows the seal between the conformable portion of the CC mask and the substrate to shift from the face of the conformal material to the inside edges of the conformable material.
  • monitoring of electrical parameters may not be performed or monitored parameters may not result in a conclusion to remove and re-deposit material, but instead such determination may be made by manual or automated visual inspection of a deposit.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Electroplating Methods And Accessories (AREA)

Abstract

L'invention concerne des procédés et un appareil de fabrication électrochimique (par exemple EFAB), permettant de surveiller au moins un paramètre électrique (par exemple la tension) au cours d'un dépôt sélectif, le paramètre surveillé étant utilisé pour déterminer la qualité du dépôt effectué. Si le paramètre surveillé indique qu'un problème s'est produit au cours du dépôt, diverses opérations permettant d'y remédier peuvent être mises en oeuvre pour que la formation de la structure soit réussie.
EP03726805A 2002-05-07 2003-05-07 Procedes et appareil de surveillance de la qualite de depot au cours d'operations de galvanoplastie effectuees a l'aide d'un masque de contact adaptable Withdrawn EP1506329A1 (fr)

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US20040000489A1 (en) 2004-01-01
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JP2005524775A (ja) 2005-08-18
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US20070181431A1 (en) 2007-08-09
KR100994887B1 (ko) 2010-11-16
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AU2003229025A1 (en) 2003-11-11
CN100582318C (zh) 2010-01-20

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