EP1502132A1 - Procede et production d'un element optique en substrat en quarz - Google Patents

Procede et production d'un element optique en substrat en quarz

Info

Publication number
EP1502132A1
EP1502132A1 EP03725056A EP03725056A EP1502132A1 EP 1502132 A1 EP1502132 A1 EP 1502132A1 EP 03725056 A EP03725056 A EP 03725056A EP 03725056 A EP03725056 A EP 03725056A EP 1502132 A1 EP1502132 A1 EP 1502132A1
Authority
EP
European Patent Office
Prior art keywords
quartz substrate
optical element
support body
quartz
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03725056A
Other languages
German (de)
English (en)
Inventor
Nils Dieckmann
Kirstin Antoni
Dieter Bader
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of EP1502132A1 publication Critical patent/EP1502132A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Definitions

  • the invention relates to a method for producing an optical element made of quartz substrate for lighting systems with lighting sources that emit very short-wave rays, in particular of a wavelength of 157 nm or shorter.
  • the invention also relates to a projection exposure system with an illumination system for microlithography for the production of semiconductor elements.
  • DOE diffractive optical elements
  • diffusing disks are also used for homogenizing the pupil, which also consist of quartz substrate.
  • the present invention is therefore based on the object of providing a method for producing an optical element, in particular a diffractive optical element or a diffusing screen for use with light sources with very short-wave radiation, which can be produced without a complex production process.
  • this object is achieved by a method for producing an optical element from quartz substrate for lighting systems with light sources which emit rays of a very short wavelength, in particular of 157 nm wavelength or shorter, the quartz substrate being connected to a support body on at least one side and is then reduced to a target value with a thickness in the ⁇ range.
  • a diffractive optical element into which a surface structure is introduced In the production of a diffractive optical element into which a surface structure is introduced, this is provided with a support body in a first method step on the side of the diffractive optical element into which the surface structure is introduced.
  • the diffractive optical element which consists of quartz substrate, is then removed down to the desired setpoint, which e.g. can be done by lapping and polishing.
  • a carrier is applied to the thinly ground quartz substrate, e.g. sprinkled, after which the support body is detached from the quartz substrate.
  • a quartz substrate is applied to both sides of the support body, which is then ground down to the desired setpoint.
  • the profiles are etched into the surfaces to form a diffusing screen.
  • the support body also serves as a support for the later use of the unit created in this way as a diffuser, it is necessary that it be made of a material which is different from the wavelength used, e.g. of 157 nm or shorter, resistant and transparent.
  • Figure 1 is a schematic representation of a projection exposure system with an illumination system
  • Figure 2 to Figure 5 shows the manufacture of a diffractive optical element
  • Figure 6 and Figure 7 shows the manufacture of a diffuser.
  • FIG. 1 shows a projection exposure system 1 for microlithography. This is used to expose structures to a substrate coated with photosensitive materials, which generally consists predominantly of silicon and is referred to as wafer 2, for the production of semiconductor components, such as e.g. Computer chips.
  • photosensitive materials which generally consists predominantly of silicon and is referred to as wafer 2
  • semiconductor components such as e.g. Computer chips.
  • the projection exposure system 1 essentially consists of an illumination device 3 with a light source 3a (not shown in more detail), a device 4 for recording and exact positioning of a mask provided with a lattice-like structure, a so-called reticle 5, through which the later structures on the wafer 2, a device 6 for holding, moving and exact positioning of this wafer 2 and an imaging device, namely a projection lens 7.
  • the basic functional principle provides that the structures introduced into the reticle 5 are exposed on the wafer 2, in particular by reducing the structures to a third or less of the original size.
  • the requirements with regard to the resolutions to be imposed on the projection exposure system 1, in particular on the projection objective 7, are in the range of a few nanometers.
  • the wafer 2 is moved on, so that a large number of individual fields, each with the structure specified by the reticle 5, are exposed on the same wafer 2.
  • a plurality of chemical treatment steps generally an etching removal of material. If necessary, several of these exposure and treatment steps are carried out in succession until a large number of computer chips have arisen on the wafer 2. Due to the gradual feed movement of the wafer 2 in the projection exposure system 1, this is often also referred to as a stepper.
  • the illumination device 3 provides a projection beam 8, for example light or a similar electromagnetic radiation, required for imaging the reticle 5 on the wafer 2.
  • a laser or the like can be used as the light source 3a for this radiation.
  • the radiation is shaped in the illumination device 3 via optical elements so that the projection beam 8 has the desired properties with regard to diameter, polarization, shape of the wavefront and the like when it hits the reticle 5.
  • the projection lens 7 consists of a large number of individual refractive and / or diffractive optical elements, such as, for example, lenses, mirrors, prisms, end plates and the like.
  • FIGS. 2 to 7 show the production of optical elements that can be parts of such a projection exposure system 1.
  • the light source 3a which emits rays with a wavelength of 157 nm or shorter
  • diffractive optical elements and diffusing screens are arranged in a known manner.
  • FIGS. 1-10 The production of a diffractive optical element from quartz substrate 9 is shown in FIGS.
  • quartz substrate 9 is applied to a support body 11 in a thickness of several millimeters via an adhesive layer 10. Quartz substrate 9 can also be used as support body 11 for the subsequent removal process.
  • the adhesive layer 10 is applied to the side of the quartz substrate 9 in which the surface structure 9a has already been introduced.
  • the removal process for the quartz substrate 9 can be carried out in a first step by lapping and in a second step by polishing to the setpoint in the ⁇ range.
  • the setpoint thickness e.g. 5 to 10 ⁇ .
  • the removal process for the quartz substrate 9 can of course also be carried out for any other process by which the thickness of the quartz substrate 9 is reduced.
  • FIG. 3 shows the quartz substrate 9 with the desired setpoint after the removal process. For technical reasons, the thickness of the quartz substrate 9 has been exaggerated.
  • a carrier 12 is applied to the removed side of the quartz substrate 9. This can be done, for example, by starting with corresponding optically highly precise surfaces.
  • the Carrier 12, which must be resistant to rays of 157 nm wavelength and transparent, can consist of calcium fluoride. Such a firing method is known for example from DE 197 04 936 AI and US 4,810,318.
  • the support body 11 with the adhesive layer 10 is detached from the side of the quartz substrate 9 with the surface structure 9a, so that a finished diffractive optical element made of a quartz substrate with a thickness of a few ⁇ is present.
  • the carrier 12 serves for the necessary stability and for the connection to a fixed structure of the lighting system 3. a warm putty such as Canada balm can be used. The putty itself can have a light wedge.
  • the back of the support body 11 is set exactly parallel to the side of the quartz substrate 9 to be processed in the removal process.
  • the removal process by lapping can be up to a thickness of approx. 15 to 20 ⁇ larger than the target thickness.
  • the removal to the desired target thickness is then carried out by polishing in an iterative process in combination with thickness measurements.
  • the adhesive connection to the support body 11 can then be released by appropriate heating after the removal process and the wringing of the carrier 12, the glue residues then also being completely removed from the surface structure 9a of the diffractive optical element.
  • FIGS. 6 and 7 show the production of a diffusing screen
  • a quartz substrate 9 of conventional thickness for example a few millimeters, is applied to the support body 11 on both sides. Then the two quartz substrates 9 each removed to the desired setpoint. The finished thickness can be seen from FIG. 7, the thickness of the two quartz substrates 9 also being shown much larger here for drawing reasons.
  • the support body 11 in this case also serves as a carrier for the future diffusing screen, it must consist of a material which is resistant to the rays of the light source 3a, e.g. of 157 nm wavelength or shorter, resistant and transparent.
  • calcium fluoride is used for this.
  • the entire unit comprising the supporting body 11 or carrier and the two quartz substrates 9 is provided with a seal 13 on the circumference. In this way, the support body or support 11 is appropriately protected in an etching bath.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé de production, à partir d'un substrat en quarz, d'un élément optique destiné à des systèmes d'éclairage comprenant des sources d'éclairage qui émettent des rayons d'une longueur d'onde de 157 nm maximum. Un substrat en quarz (9) est relié, par au moins une face, à un corps d'appui (11). Puis on enlève de la matière du substrat en quarz (9) jusqu'à obtention d'une valeur théorique et d'une épaisseur de l'ordre du ñ. Cet élément optique peut être un élément optique de diffraction ou un écran diffusant.
EP03725056A 2002-05-04 2003-04-17 Procede et production d'un element optique en substrat en quarz Withdrawn EP1502132A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10220045A DE10220045A1 (de) 2002-05-04 2002-05-04 Verfahren zur Herstellung eines optischen Elementes aus Quarzsubstrat
DE10220045 2002-05-04
PCT/EP2003/004043 WO2003093880A1 (fr) 2002-05-04 2003-04-17 Procede et production d'un element optique en substrat en quarz

Publications (1)

Publication Number Publication Date
EP1502132A1 true EP1502132A1 (fr) 2005-02-02

Family

ID=29225042

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03725056A Withdrawn EP1502132A1 (fr) 2002-05-04 2003-04-17 Procede et production d'un element optique en substrat en quarz

Country Status (6)

Country Link
US (2) US20040021843A1 (fr)
EP (1) EP1502132A1 (fr)
JP (1) JP2005524862A (fr)
AU (1) AU2003227646A1 (fr)
DE (1) DE10220045A1 (fr)
WO (1) WO2003093880A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10220045A1 (de) * 2002-05-04 2003-11-13 Zeiss Carl Smt Ag Verfahren zur Herstellung eines optischen Elementes aus Quarzsubstrat
US8381135B2 (en) 2004-07-30 2013-02-19 Apple Inc. Proximity detector in handheld device
US7408624B2 (en) * 2005-06-30 2008-08-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102007007907A1 (de) * 2007-02-14 2008-08-21 Carl Zeiss Smt Ag Verfahren zur Herstellung eines diffraktiven optischen Elements, nach einem derartigen Verfahren hergestelltes diffraktives optisches Element, Beleuchtungsoptik mit einem derartigen diffratkiven optischen Element, Mikrolithografie-Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik, Verfahren zum Herstellen eines mikroelektronischen Bauelements unter Verwendung einer derartigen Projektionsbelichtungsanlage sowie mit einem solchen Verfahren hergestelltes Bauelement
WO2014023345A1 (fr) 2012-08-07 2014-02-13 Carl Zeiss Industrielle Messtechnik Gmbh Dispositif amélioré pour inspecter un objet et procédé

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10119861A1 (de) * 2000-05-04 2001-11-08 Zeiss Carl Projektionsobjektiv, insbesondere für die Mikrolithographie

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
NL8802028A (nl) * 1988-08-16 1990-03-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting.
WO1991012186A1 (fr) * 1990-02-06 1991-08-22 Biopac Biologische Verpackungssysteme Gesellschaftm.B.H. Procede de fabrication de pieces moulees putrescibles, a parois minces, a base d'amidon
DE19637563A1 (de) * 1996-09-14 1998-03-19 Zeiss Carl Fa Doppelbrechende Planplattenanordnung und DUV-Viertelwellenplatte
DE19704936A1 (de) * 1997-02-10 1998-08-13 Zeiss Carl Fa Optisches Glied und Herstellverfahren
JPH11237503A (ja) * 1997-12-03 1999-08-31 Canon Inc 回折光学素子及びそれを有する光学系
KR20000034967A (ko) * 1998-11-30 2000-06-26 헨켈 카르스텐 수정-렌즈를 갖는 오브젝티브 및 투사 조명 장치
US6150060A (en) * 1999-01-11 2000-11-21 The Regents Of The University Of California Defect tolerant transmission lithography mask
US6242136B1 (en) * 1999-02-12 2001-06-05 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6319634B1 (en) * 1999-03-12 2001-11-20 Corning Incorporated Projection lithography photomasks and methods of making
DE19929403A1 (de) * 1999-06-26 2000-12-28 Zeiss Carl Fa Objektiv, insbesondere Objektiv für eine Halbleiter-Lithographie-Projektionsbelichtungsanlage und Herstellungverfahren
US7203007B2 (en) * 2000-05-04 2007-04-10 Carl Zeiss Smt Ag Projection exposure machine comprising a projection lens
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
DE10220045A1 (de) * 2002-05-04 2003-11-13 Zeiss Carl Smt Ag Verfahren zur Herstellung eines optischen Elementes aus Quarzsubstrat

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10119861A1 (de) * 2000-05-04 2001-11-08 Zeiss Carl Projektionsobjektiv, insbesondere für die Mikrolithographie

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO03093880A1 *

Also Published As

Publication number Publication date
US20050117203A1 (en) 2005-06-02
WO2003093880A1 (fr) 2003-11-13
US20040021843A1 (en) 2004-02-05
DE10220045A1 (de) 2003-11-13
AU2003227646A1 (en) 2003-11-17
JP2005524862A (ja) 2005-08-18

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