EP1492154A3 - Enroulement pour une source de production de plasma - Google Patents

Enroulement pour une source de production de plasma Download PDF

Info

Publication number
EP1492154A3
EP1492154A3 EP04102994A EP04102994A EP1492154A3 EP 1492154 A3 EP1492154 A3 EP 1492154A3 EP 04102994 A EP04102994 A EP 04102994A EP 04102994 A EP04102994 A EP 04102994A EP 1492154 A3 EP1492154 A3 EP 1492154A3
Authority
EP
European Patent Office
Prior art keywords
coil
plasma
plasma source
plasma generating
generating source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04102994A
Other languages
German (de)
English (en)
Other versions
EP1492154A2 (fr
Inventor
Nam Hun Kim
Joon Hun Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adaptive Plasma Technology Corp
Original Assignee
Adaptive Plasma Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2003-0044396A external-priority patent/KR100487575B1/ko
Priority claimed from KR10-2003-0045642A external-priority patent/KR100528253B1/ko
Priority claimed from KR10-2003-0048645A external-priority patent/KR100527837B1/ko
Priority claimed from KR1020030059138A external-priority patent/KR100554651B1/ko
Application filed by Adaptive Plasma Technology Corp filed Critical Adaptive Plasma Technology Corp
Publication of EP1492154A2 publication Critical patent/EP1492154A2/fr
Publication of EP1492154A3 publication Critical patent/EP1492154A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
EP04102994A 2003-06-26 2004-06-28 Enroulement pour une source de production de plasma Withdrawn EP1492154A3 (fr)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR20030042111 2003-06-26
KR2003042111 2003-06-26
KR2003044396 2003-07-01
KR10-2003-0044396A KR100487575B1 (ko) 2003-07-01 2003-07-01 3차원 구조의 플라즈마 소스 및 이를 채용한 플라즈마 챔버
KR2003045642 2003-07-07
KR10-2003-0045642A KR100528253B1 (ko) 2003-07-07 2003-07-07 낮은 이온 플럭스와 높은 임피던스를 갖는 플라즈마 소스및 이를 채용한 플라즈마 챔버
KR10-2003-0048645A KR100527837B1 (ko) 2003-07-16 2003-07-16 균일한 플라즈마 분포를 발생시키는 플라즈마 소스 및플라즈마 챔버
KR2003048645 2003-07-16
KR2003059138 2003-08-26
KR1020030059138A KR100554651B1 (ko) 2003-08-26 2003-08-26 증대된 플라즈마 밀도를 갖는 플라즈마 소스 및 이를이용한 플라즈마 챔버

Publications (2)

Publication Number Publication Date
EP1492154A2 EP1492154A2 (fr) 2004-12-29
EP1492154A3 true EP1492154A3 (fr) 2006-04-19

Family

ID=33425672

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04102994A Withdrawn EP1492154A3 (fr) 2003-06-26 2004-06-28 Enroulement pour une source de production de plasma

Country Status (6)

Country Link
US (1) US20040261718A1 (fr)
EP (1) EP1492154A3 (fr)
JP (1) JP2005019412A (fr)
CN (1) CN1292623C (fr)
SG (1) SG153632A1 (fr)
TW (1) TWI291842B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100584122B1 (ko) * 2004-03-25 2006-05-29 에이피티씨 주식회사 플라즈마 소스코일을 갖는 플라즈마 챔버 및 이를 이용한웨이퍼 식각방법
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
KR100716720B1 (ko) * 2004-10-13 2007-05-09 에이피티씨 주식회사 비원형의 플라즈마 소스코일
KR100748871B1 (ko) * 2005-10-21 2007-08-13 에이피티씨 주식회사 균일한 자계분포를 갖도록 하는 적응형 플라즈마 소스 및이를 포함하는 플라즈마 챔버
CN1937880B (zh) * 2005-12-08 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合源
WO2007062605A1 (fr) * 2005-12-02 2007-06-07 Beijing Nmc Co., Ltd Source de plasma
CN100405878C (zh) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) * 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
KR100907438B1 (ko) * 2007-01-15 2009-07-14 (주)제이하라 플라즈마 발생장치
TW200830941A (en) * 2007-01-15 2008-07-16 Jehara Corp Plasma generating apparatus
KR101020119B1 (ko) * 2008-06-13 2011-03-08 네스트 주식회사 플라즈마 소스
US20120103524A1 (en) * 2010-10-28 2012-05-03 Applied Materials, Inc. Plasma processing apparatus with reduced effects of process chamber asymmetry
JP6454488B2 (ja) * 2014-07-10 2019-01-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
US11367591B2 (en) * 2016-12-06 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Composite plasma modulator for plasma chamber
JP6708887B2 (ja) * 2018-09-25 2020-06-10 株式会社プラズマイオンアシスト プラズマ処理装置、アンテナ導体又は／及び導電性部材の製造方法
CN113782409A (zh) * 2020-06-09 2021-12-10 自适应等离子体技术公司 可改变结构的等离子体源线圈及其调整方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0820087A2 (fr) * 1996-07-15 1998-01-21 Applied Materials, Inc. Réacteur à plasma radiofréquence avec conducteur hybride et dÔme présentant plusieurs rayons de courbure
US5944902A (en) * 1997-02-10 1999-08-31 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6030667A (en) * 1996-02-27 2000-02-29 Matsushita Electric Industrial Co., Ltd. Apparatus and method for applying RF power apparatus and method for generating plasma and apparatus and method for processing with plasma
US6268700B1 (en) * 1996-06-10 2001-07-31 Lam Research Corporation Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
JP2641390B2 (ja) * 1994-05-12 1997-08-13 日本電気株式会社 プラズマ処理装置
JP2770753B2 (ja) * 1994-09-16 1998-07-02 日本電気株式会社 プラズマ処理装置およびプラズマ処理方法
US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US6076482A (en) * 1997-09-20 2000-06-20 Applied Materials, Inc. Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
US6149760A (en) * 1997-10-20 2000-11-21 Tokyo Electron Yamanashi Limited Plasma processing apparatus
JP2972707B1 (ja) * 1998-02-26 1999-11-08 松下電子工業株式会社 プラズマエッチング装置及びプラズマエッチング方法
US6217718B1 (en) * 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6156667A (en) * 1999-12-31 2000-12-05 Litmas, Inc. Methods and apparatus for plasma processing
US6531029B1 (en) * 2000-06-30 2003-03-11 Lam Research Corporation Vacuum plasma processor apparatus and method
US6471830B1 (en) * 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US7255774B2 (en) * 2002-09-26 2007-08-14 Tokyo Electron Limited Process apparatus and method for improving plasma production of an inductively coupled plasma

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030667A (en) * 1996-02-27 2000-02-29 Matsushita Electric Industrial Co., Ltd. Apparatus and method for applying RF power apparatus and method for generating plasma and apparatus and method for processing with plasma
US6268700B1 (en) * 1996-06-10 2001-07-31 Lam Research Corporation Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil
EP0820087A2 (fr) * 1996-07-15 1998-01-21 Applied Materials, Inc. Réacteur à plasma radiofréquence avec conducteur hybride et dÔme présentant plusieurs rayons de courbure
US5944902A (en) * 1997-02-10 1999-08-31 Applied Materials, Inc. Plasma source for HDP-CVD chamber

Also Published As

Publication number Publication date
CN1578583A (zh) 2005-02-09
CN1292623C (zh) 2006-12-27
TWI291842B (en) 2007-12-21
TW200505295A (en) 2005-02-01
SG153632A1 (en) 2009-07-29
US20040261718A1 (en) 2004-12-30
JP2005019412A (ja) 2005-01-20
EP1492154A2 (fr) 2004-12-29

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