EP1485759A2 - Element en reseau pour filtrer des longueurs d'onde = 100nm - Google Patents

Element en reseau pour filtrer des longueurs d'onde = 100nm

Info

Publication number
EP1485759A2
EP1485759A2 EP03708203A EP03708203A EP1485759A2 EP 1485759 A2 EP1485759 A2 EP 1485759A2 EP 03708203 A EP03708203 A EP 03708203A EP 03708203 A EP03708203 A EP 03708203A EP 1485759 A2 EP1485759 A2 EP 1485759A2
Authority
EP
European Patent Office
Prior art keywords
individual
grating
lattice
elements
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03708203A
Other languages
German (de)
English (en)
Inventor
Klaus Heidemann
Karlfried Osterried
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of EP1485759A2 publication Critical patent/EP1485759A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4205—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant
    • G02B27/4222—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive optical element [DOE] contributing to image formation, e.g. whereby modulation transfer function MTF or optical aberrations are relevant in projection exposure systems, e.g. photolithographic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/4244—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application in wavelength selecting devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements

Definitions

  • Grating element for filtering wavelengths ⁇ 100 nm
  • the invention relates to a grating element for filtering wavelengths ⁇ 100 nm with a large number of individual grating elements, the individual grating elements having grating lines, resulting in a grating periodicity.
  • EUV lithography is one of the most promising future lithography techniques. Wavelengths in the range of 11-14 nm, in particular 13.5 nm, are currently being discussed as wavelengths for EUV lithography at a numerical one
  • the image quality in EUV lithography is determined on the one hand by the projection lens and on the other hand by the lighting system.
  • the illumination system is intended to provide the most uniform possible illumination of the field plane in which the structure-bearing mask, the so-called reticle, is arranged.
  • the projection lens forms the field level in one
  • Image plane the so-called wafer plane, in which a light-sensitive object is arranged.
  • Projection exposure systems for EUV lithography are designed with reflective optical elements.
  • the shape of the field of an EUV projection exposure system is typically that of a ring field with a high aspect ratio of 2 mm (width) x 22-26 mm (arc length).
  • the projection systems are usually operated in scanning mode.
  • EUV projection exposure systems reference is made to the following publications:
  • illumination systems for wavelengths ⁇ 100 nm The problem with illumination systems for wavelengths ⁇ 100 nm is that the light sources of such illumination systems emit radiation which can lead to undesired exposure of the light-sensitive object in the wafer plane of the projection exposure system and, in addition, optical components of the exposure system, such as the multilayer mirrors, are thereby heated ,
  • Transmission filters for example made of zircon, are used in lighting systems for wavelengths ⁇ 100 nm to filter out the unwanted radiation.
  • Such filters have the disadvantage of high light losses. Furthermore, they can be very easily destroyed by thermal stress.
  • Grating elements for example reflection gratings, in particular echelette gratings with an overall efficiency of close to 60%, have been known for some time from monochromator construction for synchrotron radiation sources, and there is good experience in particular even at very high fluxes.
  • Surface normals ⁇ describes the diffraction angle with respect to the surface normals ⁇ and the wavelength ⁇ .
  • a grating element can then be used for spectral filtering in a lighting system for wavelengths ⁇ 100 nm if the individual diffraction orders and the wavelengths are clearly separated from one another.
  • the lattice element can also be constructed from a large number of individual lattices with a continuously changing lattice constant.
  • the individual gratings are then preferably designed as blaze gratings, which are optimized for maximum efficiency in a diffraction order.
  • Blaze grids are known, for example, from Lexikon der Optik, edited by Heinz Hagerborn, pages 48-49. They are characterized by an almost triangular furrow profile.
  • a disadvantage of a grating element which is made up of a large number of individual gratings is that if the same blaze angle is used for the different individual gratings in the convergent beam path, the angle divergence of the incident beams results in a very different diffraction efficiency, for example in the I. Order; i.e. ⁇ (1), depending on the point of impact.
  • Grids are designed with a different blaze depth, depending on the location the blaze depth differences of the different individual grids are very large, which requires a very complex production.
  • the object of the invention is therefore to overcome the disadvantages of the prior art, in particular to provide an easy-to-produce grating element which separates the 0th and 1st diffraction orders and also provides a grating element in the convergent beam path which is independent of the angle of incidence Rays of the beam bundle have a largely uniform diffraction efficiency, so that a largely homogeneous intensity distribution behind a diaphragm plane is formed in an illumination system when using such a grating element.
  • the above object is achieved in that the individual grating elements are arranged one behind the other on a curved surface relative to the plane spanned by the grating element in the direction of the rays of a bundle of rays which impinges on the grating element.
  • the curved surface is generally a surface with a constant curvature, the curvature of the surface not being spherical, but increasing with a decreasing angle of incidence.
  • the curved support surface is a curved surface approximated by a continuous polygon. This has the advantage that flat individual grids can be used, which require little manufacturing effort.
  • they are arranged one behind the other on a curved surface
  • Individual grids each have variable grid periods. This results in an even better separation of the 0th and 1st diffraction orders. If you determine an average line density of the single grid element of G, the line density on the individual grids varies around Ag and Ag in the range of 40 lines / mm ⁇ Ag ⁇ 200 lines / mm. It is preferred if the individual grid elements, as described above for individual grid elements arranged on a continuous polygon, each have a flat grid surface, comprising the grid lines.
  • the individual grid elements each have an aspherical grid surface, comprising the grid lines, as a result of which the required variation in the line density can be reduced.
  • the grating lines of a single grating element can be curved.
  • the curvature of the support surface on which the individual grating elements are arranged is preferably selected so that the blaze angle of the individual grating elements designed as a blaze grating varies so little that the diffraction efficiency deviates only slightly from the maximum blaze efficiency.
  • the invention also provides an illumination system with such a grating element.
  • the lighting system comprises an object plane and a field plane, at least one grating element according to the invention and at least one physical diaphragm in a diaphragm plane which is arranged downstream of the grating element in the beam path from the object plane to the field plane.
  • a largely homogeneous intensity distribution that is, in the field facet plane downstream of the physical aperture in the beam path achieved homogeneous illumination.
  • the at least one physical diaphragm in the lighting system serves to prevent false light other than the desired diffraction order, in particular the 0th diffraction order, from reaching the lighting system with wavelengths well above 100 nm.
  • the at least one physical diaphragm preferably blocks the light of the 0th diffraction order and the further diffraction orders apart from the desired diffraction order, which is preferably the 1st diffraction order.
  • the beams after the physical diaphragm have wavelengths in the range from 7 to 25 nm.
  • the lighting system can comprise a collector unit, the convergent light bundle being directed onto the grating element.
  • the focus of the light beam for an nth diffraction order of the grating element is particularly preferably at the location of the physical aperture or in the vicinity of the physical aperture, where
  • 1.
  • the invention also provides a projection exposure system with such a lighting system and a method for
  • Figure 1 arrangement of a grating element with individual grids and diaphragm arranged one behind the other in the beam path of the collector unit of an illumination system
  • FIGS. 4a and 4b representation of a blaze grating to derive the blaze depth and the blaze angle
  • FIG. 5 diffraction efficiency for grating elements designed as blaze gratings and consisting of different materials
  • a grating element 1 is shown with a plurality of individual grids 9.1, 9.2, 9.3 in the beam path of an illumination system.
  • the individual grids 9.1, 9.2, 9.3 are arranged one behind the other in the beam direction.
  • the light from the light source 3 is collected by a collecting component, the collector 5.
  • the collector 5 is an ellipsoidal mirror, which generates an image of the light source 3.
  • a plurality of partial diaphragms 7.1, 7.2 arranged in front of the physical diaphragm 7.3 can already be used to filter out undesired radiation in order to match the heat load on the physical diaphragm 7.3 with "the circular opening, which is located in the focal plane of the desired diffraction order, here the +1 order 16
  • the screens 7.1, 7.2 can also be cooled, which is not shown.
  • the grid element 1 can also be cooled, for example by cooling on the rear side.
  • the rear cooling device 8 of the grid element 1 with a large number of individual grids 9.1 arranged one behind the other , 9.2, 9.3 is preferably a liquid cooling device with inlet and outlet 10.1, 10.2.
  • the grating element 1 and the physical diaphragm 7.3 make it possible to achieve the 0th order, which comprises all wavelengths of the light source, in an illumination system which has an optical Element according to the invention and a subordinate aperture 7.3 includes blocking completely. In addition, all higher orders except the +1. Order blocked.
  • FIG. 1 An exemplary embodiment of a lattice element according to the invention with a multiplicity of individual lattices which are arranged on a curved support surface is to be specified below.
  • the same components as in FIG. 1 are assigned a reference number increased by 100.
  • Shown is a collimated bundle of light 100 which starts from the light source not shown in FIG. 2 and is taken up by the entire grating element according to the invention.
  • the two marginal rays 102, 104 and the center ray 106 are shown.
  • the virtual intermediate image focus Z of the light source (not shown in FIG. 2), which is generated by the collector, also not shown, is shown.
  • the origin of a right-angled coordinate system is defined in the x, y and z directions.
  • This coordinate system is shown in Figure 2. All the sizes given in Table 1 below are based on this. Overall, the exemplary embodiment according to FIG. 2 comprises 18 individual grid elements. Embodiments with fewer than 18 individual gratings are also possible, for example with 10, 7 or 5 individual gratings, without departing from the spirit of the invention.
  • the position of the individual grid elements, of which in FIG. 2 The individual grating elements 109.1, 109.2, 109.17, 109.18 are shown in Table 1 below in the x and y directions with reference to the coordinate system in the intermediate image focus Z in the 0th diffraction order.
  • the center beam 106 of the light bundle 100 falls with the coordinate axis in x
  • Each grating element takes a partial light bundle 100.1 of the total emanating from the light source
  • Each partial light bundle comprises a lower edge beam 104.1, as well as an upper edge beam 102.1 and a center beam 106.1.
  • ⁇ denotes the angle of incidence of a beam, here the center beam 106.1 of the incident partial light bundle 100.1 with respect to the normal 111.1 of the single grating element 109.1, which is perpendicular to the grating surface, ß the angle of reflection in the diffraction order, here the +1.
  • Diffraction order of a diffracted beam here the diffracted center beam 106.1 of the partial light bundle 100.1 compared to the normal 111.1.
  • the focus 113 of the +1. Diffraction order diffracted light bundle comes to rest in the aperture plane 107.3.
  • the origin of the x, y, z coordinate system is defined by the virtual intermediate image focus Z as described in FIG.
  • the angle ⁇ denotes the angle of reflection of a diffracted beam of the partial light bundle, here the center beam 106.1.
  • angles ⁇ and ⁇ are given for the lower and upper marginal ray and the center ray of a partial light bundle incident on the respective individual grating element, the angle ⁇ denotes the angle of inclination of the respective individual grating with respect to the x-axis of the coordinate system given by the virtual intermediate image focus.
  • the individual grids are arranged inclined on a continuous poly-train, i.e. the edges of adjacent individual grids adjoin one another directly, so that when a light bundle 100 grazes, mutual shading of the partial light bundles is not possible.
  • Edges of adjacent single grids are shown for single grids 109.1 and 109.2.
  • the blaze angle ⁇ and the grid line density G in lines / mm are given for the exemplary embodiment according to Table 1 with 18 individual grids.
  • the blaze angle is defined in FIGS. 4a and 4b.
  • the physical diaphragm 107.3 arranged downstream of the grating element 101 is also shown in FIG. In the diaphragm plane of the physical diaphragm 107.3 lies that of the + 1st diffraction order of the individual grating elements 109.1,
  • the width of the 18 individual grids arranged on a base or support plate 115 decreases with a decreasing angle of incidence ⁇ of 51.25 mm for the first point itter 109.1 to 18.03 mm for the 18th single grid 109.18.
  • the base plate 115 can be cooled.
  • the base plate 115 spans a plane E on which is inclined by an angle ⁇ Mittei with respect to the x coordinate axis.
  • the individual grid elements are arranged on a curved surface K of the carrier plate 115.
  • the curved support surface is a continuous polygon, without limitation.
  • the position coordinates x, y and the angles .phi., .Alpha., The blaze angle .epsilon. And the lattice constant G are given in the respective columns for each individual lattice. Furthermore, the angle of inclination ⁇ of the respective individual grid element is given. Since the individual grid elements are flat in the exemplary embodiment shown, only an angle of inclination ⁇ is required to characterize the position of the individual grid element on the curved support surface.
  • the position coordinates x, y and the angles ⁇ ,, the blaze angle ⁇ and the lattice constant G are one for three points
  • Specified single grid namely the two boundary points of the single grid in the x direction and the center position of the respective single grid in the x direction.
  • the edge points correspond to the points of incidence of the edge rays of the respective partial light bundle and the center position corresponds to the point of impact of the central beam of the respective light bundle.
  • Table 1 Grid element with individual grids arranged on a continuous polygon
  • a grid element according to the invention comprises a total of 8 individual grids.
  • the grid element with 8 individual grids is extended over a total length of 521.5 mm in the X direction.
  • the 8 single grids are flat single grid elements that are arranged next to each other on a continuous polygon.
  • the angle of inclination ⁇ of the flat grid surfaces to the X-axis increases continuously and almost linearly from 12.4 ° for the first element to 13.6 ° for the eighth element.
  • the angle of incidence ⁇ drops from 83.8 ° for the first element to 69.4 ° for the eighth element.
  • the mean blaze angle ⁇ of each of the individual elements is constant at 1.21 ° and has a minimum variation of ⁇ 0.2% and a maximum variation ⁇ 7.9% over the area of the individual elements.
  • the average furrow density of the single element increases continuously from 374 L / mm for the first element to 1160 LJmm for the eighth element, whereby the largely linear variation of the furrow density dG / dX over the area of 1.1 mm " ' ' for the first element up to 7.1 m ⁇ r1 is continuously increasing.
  • the focal point of the 1st diffraction order on the diaphragm surface is> 14 mm or> Y, mm
  • the blaze efficiency calculated for this reflection layer in the first diffraction order increases continuously from 65.7% for the first element to 68.1% for the fourth element and then drops to 56.8% for the eighth element.
  • this lattice element with a total of 8 individual lattices consists in the fact that only a small number of 8 individual lattice elements is required, the mean blaze angle on all individual elements is constant and therefore the lattice axes of all individual elements using the same technological process (eg mechanical lattice division or holographic) Exposure with subsequent ion beam etching) can be generated, all individual elements are used in a blaze arrangement the, so that the diffraction efficiency is 64.9% on average, the efficiency only varies by +3.2 / - 8.1%, so that a largely homogeneous intensity distribution over the cross-section of the light beam passing through the aperture is achieved, and the separation of those through the aperture with an aperture diameter of, for example, 2 mm and used in the further lighting system with wavelengths between 13.0 and 14.0 nm from the radiation emitted by the source with other wavelengths with an intensity ratio of> 1000/1.
  • each individual grating of the grating element is designed as a blaze grating.
  • FIG. 4a shows a blaze grating with an approximately triangular furrow profile.
  • the reference numeral 200 designates the beam striking the single grating designed as a blaze grating, for example the single grating 209.1, with the grating period P; 202 the beam reflected on the grating in the 0th order and 204 the beam diffracted in the + 1st order, 206 the in the 1st order and 208 the in the +2. Order diffracted beam.
  • B denotes the blaze depth and P the grating period.
  • ⁇ ( ⁇ - ß) / 2 with the diffraction geometry shown
  • the x-dependence of the diffraction efficiency is determined by the x-dependence of the angle of incidence ⁇ and the blaze angle ⁇ .
  • FIG. 6 shows an EUV projection exposure system with a grating element according to the invention. All components that are identical to components in the previous figures have a reference number increased by 2000.
  • the EUV projection exposure system comprises a light source 2003, a collecting optical component, a so-called collector 2005, which, as a nested collector according to German patent application DE-A-10102934, filed on January 23, 2001 at the German Patent Office for the applicant, the disclosure content of which is fully is included in the present application.
  • the collector 2005 maps the light source 2003 lying in the object plane of the lighting system into an image of the light source or a secondary light source 2004 in or in the vicinity of a diaphragm plane 2007.3.
  • the light source 2003 which can be, for example, a laser plasma source or a plasma discharge source, is arranged in the object plane of the lighting system; that comes in the image plane of the lighting system
  • Image of the primary light source to lie on which is also referred to as a secondary light source.
  • Additional apertures 2007.1, 2007.2 are arranged between grating element 2001 and the physical aperture 2007.3 in order to block the light of undesired wavelengths, in particular wavelengths greater than 30 nm.
  • the focus of the 1st order comes to lie in the plane of the aperture 2007.3, i.e. the light source 2003 is by collector and grating spectral filter in the -1.
  • Diffraction order mapped almost stigmatically in the plane of aperture 2007.3.
  • the representation in all other diffraction orders is not stigmatic.
  • the illumination system of the projection system comprises an optical system 2020 for shaping and illuminating the field level 2022 with an annular field.
  • the optical system comprises two facet mirrors 2029.1, 2029.2 and two imaging mirrors 2030.1, 2030.2 and a field-forming grazing ineidence Mirror 2032. Additional apertures 2007.4, 2007.5, 2007.6, 2007.7 are arranged in the optical system 2020 to suppress false light.
  • the first facet mirror 2029.1 the so-called field facet mirror, generates a multiplicity of secondary light sources in or in the vicinity of the plane of the second facet mirror 2029.2, the so-called pupil facet mirror. Since a homogenization of the intensity distribution in and behind the aperture plane of the physical aperture 2007.3 is achieved with the grating element according to the invention, a largely homogeneous intensity distribution, ie. H. homogeneous illumination is achieved.
  • the following imaging optics images the pupil facet mirror 2029.2 in the exit pupil 2034 of the illumination system, which comes to rest in the entry pupil of the projection objective 2026.
  • the angles of inclination of the individual facets of the first and second facet mirrors 2029.1, 2029.2 are designed such that the images of the individual field facets of the first facet mirror 2029.1 overlap in the field plane 2022 of the illumination system and thus a largely homogenized illumination of the structure-bearing mask, which is in this field plane 2022 comes to rest, is made possible.
  • the segment of the ring field is formed by the grazing incidence mirror 2032, which operates under grazing incidence.
  • a double faceted lighting system is disclosed, for example, in US Pat. No. 6,198,793, imaging and field-shaping components in PCT / EP / 00/07258. The content of the disclosure of these documents is fully incorporated into the present application.
  • the structure-bearing mask arranged in the field plane 2022 which is also referred to as a reticle, is imaged into the image plane 2028 of the field plane 2022 with the aid of a projection objective 2026.
  • the projection lens 2026 is a 6-mirror projection lens, such as in the US application
  • the object to be exposed for example a wafer, is arranged in the image plane 2028.
  • the invention provides for the first time an optical element with which it is possible to select undesired wavelengths directly after the primary light source, with an arrangement on a curved support surface of a plurality of individual gratings, for example on a continuous polygon, homogenizing the intensity distribution in which is reached and behind the aperture level of a physical aperture in an illumination system.
  • the manufacture of the grating element is greatly simplified since the blaze angle differences on the different grids are minimized.

Abstract

L'invention concerne un élément en réseau servant à filtrer des longueurs d'onde inférieures ou égales à 100 nm. Cet élément comprend une pluralité d'éléments individuels en réseau comportant des lignes de réseau produisant une périodicité de réseau. L'invention se caractérise en ce que les éléments individuels en réseau sont disposés les uns derrière les autres, dans le sens des rayons d'un faisceau de rayons incidents sur l'élément en réseau, sur une surface porteuse courbe par rapport au plan défini par l'élément en réseau.
EP03708203A 2002-03-21 2003-03-10 Element en reseau pour filtrer des longueurs d'onde = 100nm Withdrawn EP1485759A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10212691 2002-03-21
DE2002112691 DE10212691A1 (de) 2002-03-21 2002-03-21 Gitterelement zum Filtern von Wellenlängen 100 nm
PCT/EP2003/002419 WO2003081712A2 (fr) 2002-03-21 2003-03-10 Element en reseau pour filtrer des longueurs d'onde = 100 nm

Publications (1)

Publication Number Publication Date
EP1485759A2 true EP1485759A2 (fr) 2004-12-15

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Family Applications (1)

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EP03708203A Withdrawn EP1485759A2 (fr) 2002-03-21 2003-03-10 Element en reseau pour filtrer des longueurs d'onde = 100nm

Country Status (5)

Country Link
EP (1) EP1485759A2 (fr)
JP (1) JP2005521107A (fr)
AU (1) AU2003212324A1 (fr)
DE (1) DE10212691A1 (fr)
WO (1) WO2003081712A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821900B2 (en) * 2008-05-15 2010-10-26 Northrop Grumman Systems Corporation Diffractive optical element and method of designing the same
NL2004816A (en) * 2009-07-07 2011-01-10 Asml Netherlands Bv Euv radiation generation apparatus.
DE102011003145A1 (de) * 2010-02-09 2011-08-11 Carl Zeiss SMT GmbH, 73447 Optisches System mit Blendeneinrichtung
JP5637702B2 (ja) * 2010-03-09 2014-12-10 キヤノン株式会社 露光装置およびデバイス製造方法
DE102017206066A1 (de) * 2017-04-10 2018-10-11 Anvajo GmbH Spektrometer
DE102021210671A1 (de) 2021-09-24 2022-12-01 Carl Zeiss Smt Gmbh Intensitätsanpassungsfilter für eine optische anordnung und optische anordnung mit einem entsprechenden intensitätsanpassungsfilter sowie verfahren zu dessen herstellung

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Publication number Priority date Publication date Assignee Title
JPH04120717A (ja) * 1990-09-12 1992-04-21 Nec Corp Ｘ線露光装置
EP0884736B1 (fr) * 1997-06-11 2004-01-28 Istituto Nazionale Di Fisica Nucleare Diffracteur échelonné construit à angle de largeur d'échelon constant (monochromateur échelonné)
US6118577A (en) * 1998-08-06 2000-09-12 Euv, L.L.C Diffractive element in extreme-UV lithography condenser
TWI240151B (en) * 2000-10-10 2005-09-21 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO03081712A3 *

Also Published As

Publication number Publication date
DE10212691A1 (de) 2003-10-02
WO2003081712A3 (fr) 2004-03-04
JP2005521107A (ja) 2005-07-14
AU2003212324A8 (en) 2003-10-08
AU2003212324A1 (en) 2003-10-08
WO2003081712A2 (fr) 2003-10-02

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