EP1459038B1 - Systeme et procede d'utilisation de capteurs magnetoresistifs comme capteurs a double usage - Google Patents

Systeme et procede d'utilisation de capteurs magnetoresistifs comme capteurs a double usage Download PDF

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Publication number
EP1459038B1
EP1459038B1 EP02794140.0A EP02794140A EP1459038B1 EP 1459038 B1 EP1459038 B1 EP 1459038B1 EP 02794140 A EP02794140 A EP 02794140A EP 1459038 B1 EP1459038 B1 EP 1459038B1
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EP
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Prior art keywords
magnetoresistive
sensing device
sensor
sensing
temperature
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EP02794140.0A
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German (de)
English (en)
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EP1459038A1 (fr
Inventor
Hong Wan
Lakshman S. Withanawasam
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Honeywell International Inc
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Honeywell International Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/20—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer in a specially-adapted circuit, e.g. bridge circuit
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/36—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using magnetic elements, e.g. magnets, coils
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R17/00—Measuring arrangements involving comparison with a reference value, e.g. bridge
    • G01R17/10—AC or DC measuring bridges
    • G01R17/105—AC or DC measuring bridges for measuring impedance or resistance

Definitions

  • the present invention relates in general to magnetic field sensors. More specifically, the present invention relates to using magneto-resistive sensors as multi-purpose sensors.
  • Magnetoresistive sensors are often formed using integrated circuit fabrication techniques and are composed of a nickel-iron (permalloy) thin film deposited on a silicon wafer, or other types of substrate, and patterned as resistive strips.
  • a current is applied to a magnetoresistive sensor, the resistance of the strip depends on the angle between the magnetization and the direction of the applied current, and is maximized when the magnetization and the applied current are parallel.
  • the permalloy film is subjected to an external magnetic field, the field influences the magnetization, rotating it and thereby changing the film's resistance.
  • the maximum change in resistance due to rotation of the magnetic field is two to three percent of the nominal resistance.
  • the easy axis (a preferred direction of magnetization) is set to one direction along the length of the film to allow the maximum change in resistance for an applied field within the permalloy film.
  • the influence of a strong magnetic field along the easy axis could rotate the polarity of the film's magnetization, thus, changing the sensor's characteristics.
  • a strong restoring magnetic field is typically applied to restore, or set, the sensor's characteristics.
  • large external magnets can be placed to reset the sensor's settings.
  • such an implementation may not be feasible when a magnetoresistive sensor has already been packaged into a system. Particularly, some applications require several sensors within a single package to be magnetized in opposite directions.
  • GMR giant magnetoresistive
  • GMR sensors are often used in many applications that require measurements of a relatively small magnetic field.
  • GMR sensors are composed of a multi-layer film deposited on a substrate, and the magnetoresistance occurs as a result of a relative magnetization angle between two adjacent layers, and the current direction typically does not play any role.
  • Thin-film GMR materials deposited on a silicon substrate, or any other substrate, can be configured as resistors, resistor pairs, half bridges or Wheatstone bridges.
  • GMR sensors often do not employ set-reset straps in their configurations.
  • thermocouples A number of temperature sensing techniques are currently used, and the most commonly used temperature sensors include resistive temperature detectors (“RTDs”), thermocouples, and sensor integrated circuits (“ICs"). Resistive temperature sensors employ a sensing element whose resistance varies with temperature. For example, a platinum resistive temperature detector consists of a platinum wire coil that is wound around a film of platinum deposited on a substrate. A thermocouple, on the other hand, consists of a two-wire junction made of two different metals. Finally, a silicon sensor is an integrated circuit that typically includes extensive signal processing circuitry within a package housing the sensor.
  • RTDs resistive temperature detectors
  • ICs sensor integrated circuits
  • US-B-6262574 and GB-A-2251948 both disclose sensing devices with at least two outputs and arrangements adaptable to provide a magnetic sensor reading and a temperature sensor reading.
  • the document US5945825 discloses a magnetic field sensitive sensor according to the state of the art. According to the present invention there is provided a sensing device, comprising in combination:
  • FIG. 1 is an electrical schematic diagram illustrating a sensor 100 that may be used in accordance with one embodiment of the present invention.
  • the sensor 100 includes four magnetoresistive elements 102, 104, 106, and 108 arranged in a Wheatstone bridge configuration. As illustrated in Figure 1 , the magnetoresistive elements are divided by sensing terminals 110, 112, 116, and 118. With a bridge power supply, such as a voltage supply, applied between the sensing terminals 110 and 116, the output of the bridge may be measured between terminals 112 and 118.
  • the sensor consists of four magnetoresistive elements having the same resistance R, and the bridge supply voltage causes a current to flow through the magnetoresistive elements.
  • the presence of an applied magnetic field causes the magnetization in two of the oppositely placed magnetoresistive elements to rotate towards the current, resulting in an increase in the resistance R.
  • the resistance in the magnetoresistive elements 104 and 108 may increase to R+ ⁇ R.
  • magnetization in the remaining oppositely-placed magnetoresistive elements 102 and 106 rotates away from the current and results in a decrease of the resistance in elements 102 and 106 by ⁇ R.
  • Figure 2 illustrates a layout for an integrated circuit 200 that may be employed as a Wheatstone bridge sensor according to one exemplary embodiment.
  • the integrated circuit 200 includes a substrate 202, a sensing structure 204, and sensing terminals 206, 208, 210, 212, and 214.
  • the sensing structure 204 may be configured as a resistance bridge such as the Wheatstone bridge 100 illustrated in Figure 1.
  • Figure 2 also illustrates a set-reset strap 216 and an offset strap 218. Also illustrated are set-reset terminals 220 and 222, and offset terminals 224, 226.
  • the magnetic flux generated around the set-reset strap 216 may reset the sensing structure 204 into a single magnetic domain.
  • a baseline state is established that allows for a high sensitivity and repeatable output characteristics.
  • the set-reset strap 216 illustrated in Figure 2 is arranged in a "spiral" pattern. However, other arrangements may also be used, such as a "serpentine,” an "S” shape, a “V” shape, a zigzag shape, a combination of these, or a shape in which the strap or pieces of the strap are curved or angled.
  • the sensing structure 204 When a current is run from the offset terminal 224 to the offset terminal 226, one may bias the sensing structure 204 to compensate for background magnetic fields. To do that, the current in the offset strap 218 may generate a magnetic flux that is perpendicular to the long axis of the sensing structure 204. When a current is run through the offset strap 218 in a consistent direction, the sensing structure's elements may be biased in the same direction.
  • the offset strap 218 may be also configured to bias different elements of the sensing structure 204 in different directions.
  • a sensing device such as a sensing device having a Wheatstone bridge configuration or a sensing device having a half-Wheatstone bridge configuration, provides multiple outputs including a first output and a second output that are employed to determine a temperature sensor reading and a magnetic field sensor reading, the embodiments of which will be described below.
  • Figure 3 is an electrical schematic diagram illustrating a multi-purpose sensor 300 in accordance with one exemplary embodiment. Similarly to the schematic illustrated in Figure 1 , the diagram shows the dual-purpose sensor 300 arranged in a full Wheatstone bridge configuration having four magnetoresistive elements 302, 304, 306, and 308. According to an exemplary embodiment, the resistance in the magnetoresistive elements 304 and 308, in the presence of an applied magnetic field, may increase to R + ⁇ R, and the resistance in the magnetoresistive elements 302 and 306 may decrease to R - ⁇ R. Each magnetoresistive element includes a first sensing terminal and a second sensing terminal.
  • the dual-purpose sensor 300 includes four sensing terminals 310, 312, 314, and 316.
  • the sensing terminals 310, 312, 314 and 316 are formed by connecting a second sensing terminal associated with the element 302 to a first sensing terminal associated with the element 304, connecting a second sensing terminal associated with the element 304 to a first sensing terminal associated with the element 306, connecting a second sensing terminal associated with the element 306 to a first sensing terminal associated with the element 308, and, further, connecting a second sensing terminal associated with the element 308 to a first sensing terminal associated with the element 302.
  • the sensing terminal 310 is connected to a power source 318.
  • the power source 318 includes a current source that supplies a constant direct current to the sensor 300. It should be understood that the power source 318 illustrated in Figure 3 , and any power sources illustrated in subsequent figures may be internal power sources integrated into the sensor or external power sources.
  • the sensor 300 provides two output measurements that are employed to determine multi-purpose sensor readings. Specifically, the multi-purpose sensor readings include a magnetic sensor reading and a temperature sensor reading.
  • a first voltage measurement (“Vout1”) is taken across the sensing terminals 316 and 312.
  • the Vout1 provides a magnetic sensor reading.
  • I is a constant current supplied by the current source 318
  • ⁇ R is a magnetoresistance
  • S is a bridge sensitivity related to magnetoresistive ratio
  • H is an external magnetic field applied in a direction 320 illustrated in Figure 3
  • the Vout1 value is used to determine the magnetic field.
  • a second voltage measurement (“Vout2") is taken across the sensing terminals 310 and 314, and the Vout2 value is employed to determine a temperature sensor reading.
  • Vout2 a second voltage measurement
  • magnetoresistive or giant magnetoresistive materials that are employed for dual-purpose sensors have relatively large and substantially linear temperature coefficients.
  • a temperature sensor reading may be determined by measuring the value of the resistance.
  • Eq. 5 for Vout2 may be employed to determine a temperature sensor reading.
  • the sensing functionality of the bridge may be controlled by a logical sensing element operable to determine a magnetic field sensor reading and a temperature sensor reading based on the two voltage outputs taken at the sensing terminals 310, 314 and at 312, 316.
  • two output channels maybe fed into parallel-signal circuitry and, further, to a microprocessor via two converters.
  • the microprocessor may then be operable to determine the magnetic field and temperature sensor reading using the equations described above.
  • the microprocessor may employ a look-up table or a polynomial that may be used to calculate both the magnetic field and temperature based on the transfer function calibration.
  • two outputs from the sensor can be input to a MUX and further to the microprocessor via an analog to digital (A/D) converter.
  • A/D analog to digital
  • FIG 4 is an electrical schematic diagram illustrating a multi-purpose sensor 350 in accordance with an alternative embodiment. Similarly to the schematic illustrated in Figure 3 , the diagram illustrates a full Wheatstone bridge configuration including four magnetoresistive elements 302, 304, 306, 308 divided by the sensing terminals 310, 312, 314, and 316.
  • a power supply of the bridge includes a voltage source 324 connected to one of the sensing terminals via a resistive element 322.
  • power sources may be external or internal. Thus, the voltage source may be incorporated into the sensor, or may be external to the sensor.
  • the resistive element 322, and any resistive elements described in reference to next figures, may include one or more resistor having a very low temperature coefficient, or being insensitive to temperature. It should be understood that the present invention is not limited to using resistors, and those skilled in the art will appreciate that different components could also be used. Further, resistive elements described herein may be internal resistive elements (incorporated into a sensing device) or external resistive elements (externally connected to a sensing device).
  • the sensor 350 provides two output measurements Vout3 and Vout4.
  • the first voltage measurement (Vout3) is taken across the sensing terminal 316 and 312 and provides a magnetic sensor reading.
  • Vout 3 V ⁇ Vout 4 ⁇ S ⁇ H
  • Eq. 10 may be employed to determine a temperature sensor's reading.
  • the embodiment of a multi-purpose sensor illustrated in Figure 4 is more complicated than the embodiment illustrated in Figure 3 since in the multi-purpose sensor embodiment illustrated in Figure 4 both measurements of Vout3 and Vout4 are required to determine an external magnetic field.
  • the embodiment illustrated in Figure 4 may introduce more error.
  • the logical sensing element may be employed to determine the temperature and magnetic field.
  • a look-up table or a polynomial can be employed to calculate both the magnetic field and temperature based on the transfer function calibration associated with the sensor.
  • dual-purpose sensors according to exemplary embodiments are not limited to a full Wheatstone bridge configuration and magnetic sensors including only two magnetoresistive elements, or a half Wheatstone bridge configuration, may be also employed to operate as multi-purpose sensors according to exemplary embodiments.
  • FIG. 5 is an electrical schematic diagram illustrating a dual-purpose sensor 400 including two magnetoresistive elements 302, 304 arranged in a half Wheatstone bridge configuration and having the sensing terminal 310 connected to the current source 318 and the sensing terminal 314 connected to the ground.
  • a first voltage measurement (Vout5) is taken across the sensing terminals 312 and 314, and provides a magnetic field sensor reading.
  • Vout6 a second voltage measurement (Vout6) is taken across the sensing terminals 310 and 314.
  • Vout6 the Vout6 value is employed to determine a temperature sensor reading.
  • FIG. 6 is an electrical schematic diagram 450 of a half Wheatstone bridge configuration that may be employed as a dual-purpose sensor according to an alternative embodiment.
  • the half Wheatstone bridge configuration includes two magnetoresistive elements 302 and 304 divided by the sensing terminals 310, 312, and 314.
  • the voltage source 324 is connected to the sensing terminal 310 via the resistive element 322 including for example, a resistor having a very low temperature coefficient or being insensitive to temperature.
  • two voltage measurements are taken to determine a magnetic field sensor reading and a temperature sensor reading.
  • the first voltage measurement (Vout7) is employed to determine a magnetic field sensor reading
  • the second voltage measurement (tout8) is employed to determine a temperature sensor reading.
  • a logical element as discussed in reference to Figures 5 and 6 , may use the two output measurements to determine a magnetic sensor reading and a temperature sensor reading.
  • the logical element may be implemented using a processor, and/or hardware, software, firmware elements, or a combination thereof.
  • a sensor may include metal structures (metal straps), or current straps, known as set-reset and offset straps, for restoring sensor's characteristics.
  • metal structures metal straps
  • current straps known as set-reset and offset straps
  • set-reset and offset straps for restoring sensor's characteristics.
  • the offset and set/reset straps are deposited as two metal layers in the same area occupied by the sensor bridge element. These metal layers are often electrically isolated from one another by insulation layers.
  • Figure 7 is a block diagram illustrating an exemplary cross-section 700 of the layer arrangement in a sensor.
  • a plurality of materials is deposited on a substrate 724.
  • Depositing, cutting, etching, and other steps used in a photolitographic process are well known in the art.
  • General methods for MR/GMR sensor fabrication are also described in U.S. Patent No. 5,820,924 to Witcraft et al. , and assigned to the same assignee as the present application.
  • U.S. Patent No. 5,820, 924 is fully incorporated herein by reference.
  • the sensor includes a permalloy layer 712 composed of nickel and iron, for instance.
  • the senor includes an insulator layer 710, and electrical conductors in the form of pads 718, 720 and 722 that may include output terminal leads.
  • the sensor 700 further includes an offset strap 714 placed between two dielectric layers 704 and 716.
  • the sensor further includes a Barber Pole/interconnect bar 704 arranged to provide barber pole biasing. For instance, the barber pole biasing may cause the current to flow at 45-degree angle in the film.
  • the sensor may further include a set/reset strap 708, and a passivation nitride layer 702. It should be understood that Figure 7 illustrates only an exemplary embodiment, and it should be understood that different embodiments are possible as well.
  • FIG. 8 is an electrical schematic diagram of a metal (or current) strap configuration 800 that may be employed to provide a temperature sensor reading according to one exemplary embodiment employing a constant current source.
  • a current strap 806, such as a set/reset strap or an offset strap is connected to two sensing terminals 804 and 808, with the sensing terminal 804 connected to a constant current source 802 and the sensing terminal 808 connected to the ground.
  • a voltage measurement "Vout9" for a temperature sensor reading is taken across the current strap 806.
  • Eq. 16 may be used to determine the temperature sensor's reading, and the magnetic sensor reading may be determined using the methods described above.
  • magnetoresistive elements included in multi-purpose sensors described in reference to the preceding figures may include anisotropic magnetoresistive elements or giant magnetoresistive elements, for instance. Further, those skilled in the art will appreciate that different embodiments are possible as well.
  • Figure 9 is an electrical schematic diagram of a current strap configuration 900 that may be employed to provide a temperature sensor reading according to one exemplary embodiment employing a constant voltage source.
  • a current strap 910 such as a set/reset strap or an offset strap, is connected to two sensing terminals 908 and 912, with the sensing terminal 912 connected to the ground. Further, the sensing terminal 908 is connected to a constant voltage source 902 via a resistive element 906 and a sensing terminal 904. Similarly to the preceding figures describing sensor embodiments employing a constant current source, the resistive element 906 may include a resistor having a very low temperature coefficient or being insensitive to temperature.
  • Vout10 and Vout11 may be taken to determine a temperature sensor reading, where Vout10 is taken across the resistive element 906, and Vout11 is taken across the current strap 910.
  • the proposed embodiments for the dual-purpose sensors do not require any additional hardware and provide a cost and space-effective approach.
  • Magnetic sensors enable and enhance a wide variety of applications, including compassing, navigation, GPS and other systems. Therefore, magnetic sensors are becoming an important part of large systems or products comprised of various other sensors such as tilt, accelerometer, gyro, angular rate, or pressure sensors. Most likely these sensors exhibit temperature sensitivity, and a measure of the system operating temperature is often required to temperature compensate (or correct) for the quantity measured. The range of the operating temperature is narrow, and the temperature change, rather than the absolute temperature, is often sufficient to implement the compensation/correction. In such an embodiment, the constant current implementation of the dual-purpose sensor leads to a simplified form. For example, differentiating both sides of Eq. 5 and Eq.

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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
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Claims (9)

  1. Dispositif de détection (100, 300), comprenant :
    un premier élément magnétorésistif (102, 302) ;
    un deuxième élément magnétorésistif (104, 304) électriquement couplé en série avec le premier élément magnétorésistif ;
    une première sortie prise aux bornes du deuxième élément magnétorésistif fournissant un signal proportionnel à un champ magnétique ;
    une deuxième sortie prise aux bornes des premier et deuxième éléments magnétorésistifs fournissant un signal proportionnel à une température ; et
    un élément de détection logique (200) utilisable pour transformer les première et deuxième sorties en des lectures de champ magnétique et de température en utilisant des caractéristiques magnétorésistives des premier et deuxième éléments magnétorésistifs.
  2. Dispositif de détection de la revendication 1, dans lequel les caractéristiques magnétorésistives comportent une sensibilité de pont et une résistance de pont à zéro degré.
  3. Dispositif de détection de la revendication 1, dans lequel les éléments magnétorésistifs sont choisis dans un groupe constitué par (i) un élément magnétorésistif anisotrope et (ii) un élément à magnétorésistance géante.
  4. Dispositif de détection de la revendication 1, dans lequel le premier élément magnétorésistif est relié à une source d'alimentation (318, 324).
  5. Dispositif de détection de la revendication 4, dans lequel la source d'alimentation est choisie dans un groupe constitué par (i) une source d'alimentation contenue dans le dispositif de détection et (ii) une source d'alimentation externe au dispositif de détection.
  6. Dispositif de détection de la revendication 4, dans lequel la source d'alimentation comprend une source de courant constant reliée au premier élément magnétorésistif.
  7. Dispositif de détection de la revendication 4, dans lequel la source d'alimentation comprend une source de tension constante reliée au premier élément magnétorésistif par le biais d'un élément résistif, et dans lequel la deuxième sortie est mesurée aux bornes de l'élément résistif.
  8. Dispositif de détection de la revendication 7, dans lequel l'élément résistif est choisi dans un groupe constitué par (i) un élément résistif contenu dans le dispositif de détection et (ii) un élément résistif externe.
  9. Dispositif de détection de la revendication 1, comprenant en outre une structure métallique (216, 218) adaptable pour fournir la deuxième sortie.
EP02794140.0A 2001-12-26 2002-12-03 Systeme et procede d'utilisation de capteurs magnetoresistifs comme capteurs a double usage Expired - Lifetime EP1459038B1 (fr)

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US35957 2001-12-26
US10/035,957 US6667682B2 (en) 2001-12-26 2001-12-26 System and method for using magneto-resistive sensors as dual purpose sensors
PCT/US2002/038698 WO2003058173A1 (fr) 2001-12-26 2002-12-03 Systeme et procede d'utilisation de capteurs magnetoresistifs comme capteurs a double usage

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AU (1) AU2002359592A1 (fr)
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AU2002359592A1 (en) 2003-07-24
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JP2005514611A (ja) 2005-05-19
JP4458849B2 (ja) 2010-04-28
US20030117254A1 (en) 2003-06-26
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US6667682B2 (en) 2003-12-23

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