EP1429457A2 - Vorrichtung zur Frequenzabstimmung eines Hohlraumresonators oder dielektrischen Resonators - Google Patents
Vorrichtung zur Frequenzabstimmung eines Hohlraumresonators oder dielektrischen Resonators Download PDFInfo
- Publication number
- EP1429457A2 EP1429457A2 EP03025954A EP03025954A EP1429457A2 EP 1429457 A2 EP1429457 A2 EP 1429457A2 EP 03025954 A EP03025954 A EP 03025954A EP 03025954 A EP03025954 A EP 03025954A EP 1429457 A2 EP1429457 A2 EP 1429457A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- resonator
- dielectric
- cavity
- metal layer
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
Definitions
- the invention relates to a device for frequency tuning a cavity resonator or dielectric Resonators and corresponding resonators with one Contraption.
- Methods for frequency tuning known from the prior art of cavity resonators or dielectric Resonators are either based on motion of metallic or dielectric moldings macroscopic distances, such as B. from DE 198 41 078 C1 known, or on integrated controllable semiconductor components (e.g. varactor diodes). Allow the former relatively large tuning ranges at the same time high grades ( ⁇ 10,000). However, the switchover times are disadvantageous extreme between different positions slowly ( ⁇ 1 sec). The latter do allow frequency tuning in very short times ( ⁇ 10 microseconds). However, they lead disadvantageously due to high losses by heat dissipation in the semiconductor material used to a severe degradation of the grades ( ⁇ 1000).
- the object of the invention is a device for electrical frequency tuning of a cavity resonator or a dielectric resonator make a high quality at the same time faster Tunability of the resonator enables. Further it is an object of the invention to provide a corresponding tunable To provide the resonator.
- the inventive device for frequency tuning a cavity resonator or dielectric resonator includes a dielectric substrate Metal layer.
- the metal layer is of at least interrupted a crack.
- the gap is through bridges at least one micromechanical structural element.
- the distance from the micromechanical structural element the metal layer can be varied.
- the device forms a wall with electrically controllable Transparency for certain types of waves that the electrical frequency tuning of a shielded resonator serves.
- the dielectric substrate is advantageous e.g. B. from Sapphire, aluminum oxide ceramic or high-resistance silicon available.
- the metal layer applied to it has a particularly advantageous high conductivity on. It is e.g. B. available from gold, silver or copper. That or the micromechanical structural elements are designed in particular in the form of strips. they are preferably also made of a metal with high conductivity available.
- the resonator is a dielectric resonator or a cavity resonator.
- the device according to the invention is arranged in a metallic cavity in such a way that this device acts like a semitransparent wall, that is to say a wall with electrically controllable transparency for certain types of electromagnetic waves.
- the tunable resonator is thus divided into two partial resonators.
- the arrangement consists of a metal layer applied on a dielectric substrate, which is interrupted by at least one radially extending gap.
- the micromechanical arrangement is formed by at least one metallic strip which is arranged at a certain distance above the gap or the metallic layer.
- the capacitance can be varied continuously by continuously changing the distance.
- a change in the distance in the micrometer range leads to a change in the resonance frequency in the percentage range. Due to these extremely low movement amplitudes, significantly shorter switching times can be achieved here compared to conventional mechanical tuning elements.
- the distance between the strip and the gap or metal layer can be varied by actuators or actuation methods known in MEMS technology, e.g. B. by piezoelectric, electrostatic or thermal actuators, z. B. by the bimetal effect.
- A, or having such a device dielectric resonator therefore has a high quality with quick tuning.
- the device advantageously has a plurality of radially extending columns for frequency tuning of the TE 011 or TE 01 ⁇ wave type.
- the columns are preferably each of a plurality of bridged micromechanical structural elements.
- the more columns and micromechanical structural elements the device according to the invention comprises the larger is the number of through the columns and micromechanical Structural elements created metallized circular sectors on the device according to the invention.
- the radial columns run advantageously starting from an opening.
- the opening is in the Middle of the metallic layer. But it can also also in the dielectric substrate of the invention Device are present. This way it becomes advantageous the effect achieved by the individual sectors the metallic layer electrically separated from each other are and thus the control mentioned above individual sectors.
- this is or the micromechanical structural elements on one their sides with that on the dielectric substrate applied metal layer of a sector connected.
- the distance between the structural element and the neighboring one Sector can be varied. About the variation of the distance the frequency is tuned.
- micromechanical or Structural elements part of another dielectric Are substrate.
- the columns are in the metallic Surface of a dielectric substrate arranged and are structured by means of the structural elements bridged second substrate.
- the Effect achieved that the distance between all micromechanical Structural elements and the metal layer of the first dielectric substrate varies uniformly can be (analog frequency tuning).
- the variation the distance between the micromechanical structural elements of the columns can be made by piezoelectric Actuators take place.
- a resonator with a device for frequency tuning according to the invention can be used in particular for the TE 011 or TE 01 ⁇ wave type.
- Figure 1 Arrangement of a shielded dielectric Resonators with a semi-transparent wall comprising micromechanical Structural elements.
- Figure 4 Tunable resonator with piezoelectric Actuators.
- Figure 1 shows an example of a resonator according to the invention consisting of a dielectric cylinder 4, the one in a cylindrical metallic shield housing 2 is arranged.
- the micromechanical structural elements comprehensive semi-transparent wall 3, is in one certain distance parallel to the end face 1a of the cylinder 1 'arranged above the dielectric cylinder 4.
- the device forms a partition between two partial resonators.
- the lower partial resonator 1 '' is a metallic cavity resonator with dielectric filling 4 (shielded dielectric resonator) and the upper partial resonator a metallic cavity resonator 1 ', the transparency for certain types of electromagnetic waves micromechanical movements can be controlled.
- FIG. 2 shows a possible construction of a semitransparent wall comprising micromechanical structural elements. It is an example of an arrangement for the TE 011 or TE 01 ⁇ wave type of a shielded cavity or dielectric resonator.
- the structure in Fig. 2 is a metallic wall, e.g. B. a metallic layer 24, shown in the figure dark gray, which is arranged on a dielectric carrier substrate 28 shown in black.
- the arrangement of the device in a metallic shield housing 22, which corresponds to shield 2 in FIG. 1, is also indicated.
- Four radially extending columns 25 are arranged in the metallic layer 24.
- the columns 25 are z. B. produced lithographically and represent areas without metallization.
- the metallic layer 24 is divided into four separately controllable sectors, of which only the sector is provided at the top right with reference numeral 24.
- the four columns 25 extend from an opening 26 arranged in the middle of the metallic layer.
- the opening 26 has a small diameter compared to the resonator diameter.
- each gap 25 forms an interruption in the current lines, which leads to an effective radiation of electromagnetic energy into an upper partial resonator 1 ', as in FIG Figure 1 shown leads. In this way, a coupling of the two partial resonators 1 ′ and 1 ′′, as shown in FIG. 1, is realized.
- the micromechanical Structural elements 27 are metallic Stripes, each with one of their sides the metallic layer 24 are connected.
- the micromechanical Structural elements 27 each bridge one Gap 25 locally at this point. Only the one on the right Micromechanical structural element 27 is identified by reference numerals Mistake.
- a minor Distance between stripes 27 and metal layer 24 results from the overlap between strips 27 and metallic layer 24 one parallel to the gap capacity switched capacity, its variation through Distance change also to a frequency change and thus leads to frequency tuning.
- the simulation for one results from commercial available microwave ceramics existing dielectric resonator with a resonance frequency of 1.9 GHz, a frequency change of approx. 20 MHz at one Change the distance between four strips 27 on four columns 25 between zero and ten micrometers (Strips 2 x 5 mm, gap 2 mm diameter).
- the resonator quality of about 30,000 is compared to a corresponding one Resonator hardly changed without tuning device.
- the strips 37 are about as floating Cantilever designed with one side each the metallic layer 34 are anchored, so lets a desired movement of the strips z. B. by Bend the strips 37.
- actuation methods such as. B.
- Figure 4 shows a possible arrangement for analog uniform movement of all strips 11b, which as structured metal layer on a dielectric Substrate 9b are applied using piezoelectric Actuators 10.
- the substrate 9a comprises the gap arrangement 11a as a structured metal layer.
- Only two piezo actuators 10 are shown in the image plane only the actuator on the left in the image plane with reference numerals is provided.
- the illustrated devices for frequency tuning are based on the geometry of a circular cylindrical cavity resonator or adapted dielectric resonators. Basically, the device is also different Geometry conceivable as a circular to the To achieve frequency tuning of a resonator.
- a tunable filter structure includes several together coupled cavity resonators and / or dielectric Resonators with the device according to the invention for frequency tuning.
- a tunable oscillator includes a semiconductor amplifier and a cavity or dielectric Resonator with a device for frequency tuning according to the invention.
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
Claims (13)
- Vorrichtung zur Frequenzabstimmung eines Hohlraumresonators oder dielektrischen Resonators, umfassend eine auf einem dielektrischen Substrat aufgebrachte Metallschicht (24, 34), welche wenigstens einen Spalt (25, 35) aufweist, wobei der Spalt (25, 35) durch mindestens ein mikromechanisches Strukturelement (27, 37) überbrückt wird, dessen Abstand zur Metallschicht (24, 34) variiert werden kann.
- Vorrichtung nach vorhergehendem Anspruch,
gekennzeichnet durch,
eine Vielzahl an Spalten (25, 35). - Vorrichtung nach einem der vorhergehenden Ansprüche,
gekennzeichnet durch
wenigstens einen radial verlaufenden Spalt (25, 35). - Vorrichtung nach einem der vorhergehenden Ansprüche,
gekennzeichnet durch
eine Vielzahl an mikromechanischen Strukturelementen (27, 37). - Vorrichtung nach einem der vorhergehenden Ansprüche,
dadurch gekennzeichnet, daß
mindestens ein mikromechanisches Strukturelement (27, 37) an einer Seite mit der auf dem dielektrischen Substrat aufgebrachten Metallschicht (24, 34) verbunden ist. - Vorrichtung nach einem der vorhergehenden Ansprüche,
gekennzeichnet durch,
eine im Vergleich zum Resonatordurchmesser kleine Öffnung (26, 36), welche insbesondere in der Mitte der Metallschicht (24, 34) angeordnet ist. - Vorrichtung nach einem der vorhergehenden Ansprüche,
dadurch gekennzeichnet, daß
das oder die mikromechanischen Strukturelemente (11b) Bestandteile eines weiteren dielektrischen Substrats (9b) sind. - Vorrichtung Anspruch 7,
dadurch gekennzeichnet, daß
die mikromechanischen Strukturelemente (11b) des weiteren dielektrischen Substrats (9b) die Spalte(n) der metallischen Schicht (11a) eines dielektrischen Substrats (9a) überbrücken. - Hohlraumresonator oder dielektrischer Resonator, umfassend eine Vorrichtung zur Frequenzabstimmung nach einem der vorhergehenden Ansprüche.
- Hohlraumresonator oder dielektrischer Resonator nach Anspruch 9 mit weiteren Elementen zur Ankopplung.
- Abstimmbare Filterstruktur umfassend mehrere miteinander verkoppelte Hohlraumresonatoren und/oder dielektrische Resonatoren nach Anspruch 9 oder 10.
- Abstimmbarer Oszillator umfassend einen Halbleiterverstärker und einen Hohlraumresonator oder dielektrischen Resonator nach Anspruch 9 oder 10.
- Verwendung eines Hohlraumresonators oder dielektrischen Resonators nach Anspruch 9 oder 10 zur Frequenzabstimmung eines TE011 oder TE01δ Wellentyps.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10257822A DE10257822B3 (de) | 2002-12-10 | 2002-12-10 | Vorrichtung zur Frequenzabstimmung eines Hohlraumresonators oder dielektrischen Resonators |
DE10257822 | 2002-12-10 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1429457A2 true EP1429457A2 (de) | 2004-06-16 |
EP1429457A3 EP1429457A3 (de) | 2008-11-05 |
EP1429457B1 EP1429457B1 (de) | 2009-11-04 |
Family
ID=32319043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03025954A Expired - Lifetime EP1429457B1 (de) | 2002-12-10 | 2003-11-13 | Vorrichtung zur Frequenzabstimmung eines Hohlraumresonators oder dielektrischen Resonators |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1429457B1 (de) |
AT (1) | ATE447793T1 (de) |
DE (2) | DE10257822B3 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010148405A3 (en) * | 2009-06-19 | 2011-04-07 | Qualcomm Incorporated | Mems tunable resonator in a cavity |
EP2395599A1 (de) * | 2010-06-02 | 2011-12-14 | Com Dev International Limited | TE011 Hohlraumfilter und Verfahren |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4030051A (en) * | 1976-07-06 | 1977-06-14 | Hughes Aircraft Company | N-section microwave resonator having rotary joint for variable coupling |
US4692727A (en) * | 1985-06-05 | 1987-09-08 | Murata Manufacturing Co., Ltd. | Dielectric resonator device |
JPS63299604A (ja) * | 1987-05-29 | 1988-12-07 | Murata Mfg Co Ltd | 誘電体共振器装置 |
JPH05110337A (ja) * | 1991-10-14 | 1993-04-30 | Nec Corp | マイクロ波発振器 |
WO2002022492A2 (en) * | 2000-09-14 | 2002-03-21 | Mcnc | Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods |
-
2002
- 2002-12-10 DE DE10257822A patent/DE10257822B3/de not_active Expired - Fee Related
-
2003
- 2003-11-13 DE DE50312086T patent/DE50312086D1/de not_active Expired - Lifetime
- 2003-11-13 AT AT03025954T patent/ATE447793T1/de active
- 2003-11-13 EP EP03025954A patent/EP1429457B1/de not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4030051A (en) * | 1976-07-06 | 1977-06-14 | Hughes Aircraft Company | N-section microwave resonator having rotary joint for variable coupling |
US4692727A (en) * | 1985-06-05 | 1987-09-08 | Murata Manufacturing Co., Ltd. | Dielectric resonator device |
JPS63299604A (ja) * | 1987-05-29 | 1988-12-07 | Murata Mfg Co Ltd | 誘電体共振器装置 |
JPH05110337A (ja) * | 1991-10-14 | 1993-04-30 | Nec Corp | マイクロ波発振器 |
WO2002022492A2 (en) * | 2000-09-14 | 2002-03-21 | Mcnc | Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods |
Non-Patent Citations (1)
Title |
---|
GHOSH I S ET AL: "Temperature compensated high-Q dielectric resonators for long term stable low phase noise oscillators" FREQUENCY CONTROL SYMPOSIUM, 1997., PROCEEDINGS OF THE 1997 IEEE INTER NATIONAL ORLANDO, FL, USA 28-30 MAY 1997, NEW YORK, NY, USA,IEEE, US, 28. Mai 1997 (1997-05-28), Seiten 1024-1029, XP010257402 ISBN: 978-0-7803-3728-2 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010148405A3 (en) * | 2009-06-19 | 2011-04-07 | Qualcomm Incorporated | Mems tunable resonator in a cavity |
US8362853B2 (en) | 2009-06-19 | 2013-01-29 | Qualcomm Incorporated | Tunable MEMS resonators |
US8981875B2 (en) | 2009-06-19 | 2015-03-17 | Qualcomm Incorporated | Tunable MEMS resonators |
EP2395599A1 (de) * | 2010-06-02 | 2011-12-14 | Com Dev International Limited | TE011 Hohlraumfilter und Verfahren |
US8884723B2 (en) | 2010-06-02 | 2014-11-11 | Com Dev International Ltd. | TE011 cavity filter assembly |
Also Published As
Publication number | Publication date |
---|---|
DE50312086D1 (de) | 2009-12-17 |
DE10257822B3 (de) | 2004-08-12 |
EP1429457A3 (de) | 2008-11-05 |
ATE447793T1 (de) | 2009-11-15 |
EP1429457B1 (de) | 2009-11-04 |
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