EP1389347A1 - Method for contacting an electrical component with a substrate comprising a conducting structure - Google Patents

Method for contacting an electrical component with a substrate comprising a conducting structure

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Publication number
EP1389347A1
EP1389347A1 EP02729854A EP02729854A EP1389347A1 EP 1389347 A1 EP1389347 A1 EP 1389347A1 EP 02729854 A EP02729854 A EP 02729854A EP 02729854 A EP02729854 A EP 02729854A EP 1389347 A1 EP1389347 A1 EP 1389347A1
Authority
EP
European Patent Office
Prior art keywords
substrate
component
electrical component
connecting means
solder material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02729854A
Other languages
German (de)
French (fr)
Inventor
Holger HÜBNER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1389347A1 publication Critical patent/EP1389347A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1089—Methods of surface bonding and/or assembly therefor of discrete laminae to single face of additional lamina

Definitions

  • substrates When contacting electrical components, in particular semiconductor components (chips), on substrates, relatively expensive substrate materials, such as, for example, flexible plastic film carriers, and expensive electrically conductive adhesives are usually used. However, many such adhesives already require higher temperatures for curing, at which the plastic material of the film carrier is damaged or a metallization applied to it is detached.
  • the aim is to use inexpensive soldering methods for contacting the component on the substrate, since these are more cost-effective than the electrically conductive adhesives. Due to their high joining temperatures, however, soldering processes require particularly temperature-resistant and therefore expensive substrate materials.
  • the object of the present invention is to provide a method for contacting an electrical component with a substrate provided with a conductor structure, which provides a permanent electrically conductive connection of sufficient conductivity regardless of the thickness of a connecting means on an uneven surface of the substrate.
  • a connecting means preferably a metallic solder material composed of at least two metallic or semiconducting chemical elements, is placed between the electrical component and the conductor structure of the substrate.
  • This solder material is designed so that it has a melting point that is below a temperature critical for the resistance of the substrate.
  • the joining temperature during contacting is selected such that the substrate undergoes plastic deformation when pressure is exerted on the electrical component, so that the component is pressed into the substrate in a form-fitting manner together with the conductor structure.
  • the joining temperature is deliberately raised above the glass transition temperature of the substrate, so that the component can be pressed into the substrate until the unevenness of the substrate surface is compensated. Since at least parts of the conductor structure, which are located under the component, are pressed into the substrate during this process, the conductor structure must be so elastic that it does not break or tear. Because of the slight unevenness of the surface of the substrate, the usual copper or nickel conductor tracks are sufficiently stretchable or compressible.
  • a substrate made of a soft material which has a Has melting point below 120 ° C The material can for example consist of PVC (polyvinyl chloride), PET () or the like. Substrates made from this material are very soft, have a low melting point and are also very inexpensive.
  • the method according to the invention can be used to connect an electrical component to the substrate purely mechanically or to contact electrical contacts of the component directly with corresponding contact points which are part of the conductor structure on the substrate in order to produce an electrically conductive connection.
  • an electrically conductive connection could be established, for example, using bond wires.
  • the term contacting is then to be understood to mean that a uniform mechanical connection between the component and the substrate, which is therefore secure against detachment, is ensured over the entire connecting surface of the component.
  • the connecting means is brought between a contact of the electrical component and the corresponding contact points on the conductor track.
  • the parameters of the method are preferably selected such that the connecting means is solidified before the plastic deformation of the substrate begins.
  • This procedure has the advantage that lateral material movements of the substrate can no longer shift the position of the contact points during the elastic deformation. Such a shift could possibly impair the electrically conductive connection between the component and the substrate, in that either no connection is made or there is a connection between unwanted conductors. If the lateral material movements of the substrate were not limited, the distances between the contact points and conductor tracks would have to be be enlarged. However, this would require more space.
  • a solder material made from at least two elemental metals or semiconductor materials is preferably used as the connecting means.
  • the molten solder material is preferably such that it forms an alloy or intermetallic compound or phase with the metal of the metal layer of the foil or with the metal of the contact of the semiconductor component. This melting point is preferably so high that the film would inevitably be damaged in an attempt to melt the solder connection, or at least the metal layer would be detached from the film and the entire arrangement would thus become unusable.
  • a solder material which is particularly suitable for this is a composition - ie a mixture of at least and preferably two components which form a mixture, an alloy or a stoichiometric compound - the proportions of which are selected such that the composition is attached to a eutectic - see point or at least close to a eutectic point.
  • a composition - ie a mixture of at least and preferably two components which form a mixture, an alloy or a stoichiometric compound - the proportions of which are selected such that the composition is attached to a eutectic - see point or at least close to a eutectic point.
  • an alloy or an intermetallic compound which contains a proportion of the metal of the metal layer of the foil or of the contact of the semiconductor component, so that the composition of the material forming the electrically conductive connection is different from the eutectic of the original composition of the solder material is so significantly different that the melting point is considerably higher, in particular above the temperatures which are harmless to the film.
  • An approximately eutectic composition is defined here as a composition which has a melting point which differs from the temperature of the eutectic by at most 10 ° C.
  • a possible solder material preferably in connection with a metal layer of the foil made of copper or nickel, there is primarily a material that contains bismuth (bismuth, chemical symbol Bi).
  • Eutectic or approximately eutectic (temperature difference from the eutectic at most 10 ° C) compositions that achieve the desired are materials from the group consisting of bismuth and indium, bismuth and tin and indium and tin.
  • thermoplastic adhesive could also be used, which solidifies before the plastic deformation of the substrate begins.
  • the use of a thermoplastic adhesive also ensures that the contact points are sealed.
  • a laser operating in the infrared range or a laser with a wavelength ⁇ 1 ⁇ m can be used to heat the arrangement of the component and the substrate.
  • the laser operated in the infrared range heats up from that of the
  • solder material The side of the substrate facing away from the component, the metallic elements, whereby the solder material is first melted. After switching off the laser, the solder material solidifies. However, the heat stored in the metal is sufficient to heat the adjacent substrate, which makes it plastically deformable.
  • the electrical component is heated with the laser operated with a wavelength of ⁇ 1 ⁇ m. If the irradiation is long enough, the solder material is first melted. After the laser has been switched off, the solder material solidifies
  • Figure 2 shows a component that has been contacted on an uneven substrate.
  • FIG. 1 shows an electrical component 2 that is positioned over a substrate 1.
  • a conductor structure with conductor tracks 3 and contact points 4.
  • FIG. 1 shows an electrical component 2 that is positioned over a substrate 1.
  • the substrate 1 On the surface of the substrate 1 facing the component 2 there is a conductor structure with conductor tracks 3 and contact points 4.
  • conductor tracks 3 and contact points 4 As an example, only two conductor tracks with a respective contact point are shown in the example. It is not visible from the perspective figure that the component 2 has two corresponding contacts on its main side facing the substrate.
  • the surface of the substrate 1 facing the component 2 has an unevenness in the form of an exemplary step.
  • the level is exaggerated for the sake of clarity and will in reality be much less pronounced.
  • the step also does not have to be perpendicular to the surface of the substrate, as shown here.
  • part of the component 2 would come to rest on the upper part of the step, while the other area would protrude beyond the step. If a solder material is used that is thicker than the height of the step, this height difference can be easily compensated for. However, if a connecting means is used that is thinner than the height of the step, an unstable arrangement results without further measures, through which the component itself could be affected by mechanical stresses or the electrically conductive connection between the contact points 4 and the corresponding contacts of the component.
  • the solder material is first applied to the contact points of the substrate 1 and / or to the contacts of the component 2 for contacting.
  • the component 2 is then brought into contact with the surface of the substrate, pressure is exerted on the component and the arrangement is then heated.
  • the heating can take place, for example, with a laser.
  • a low-melting solder material such as a biln alloy, an InSn eutectic or an intermetallic phase (for example biln)
  • the solder melts and solidifies before the substrate is heated to the point that it melts. Only after the solder material has solidified does the plastic deformation of the substrate begin, as a result of which the component, together with the conductor tracks 3 underneath, is pressed into the substrate in a form-fitting manner. The result is shown in FIG. 2.

Abstract

The invention relates to the contacting of an electrical component (2), in particular a semiconductor component, with a substrate (1), comprising a conducting structure (3), whereby the jointing temperature is selected such that the substrate (1) undergoes a plastic deformation on exerting a pressure on the electrical component (2) which results in the electrical component, together with the conducting structure (3), being pressed into the substrate (1) with a positive fit. The connection between the component and the substrate is preferably produced by means of a thin diffusion solder layer, which can be worked at temperatures below the melting point of the substrate.

Description

Beschreibungdescription
Verfahren zur Kontaktierung eines elektrischen Bauelementes mit einem eine Leiterstruktur aufweisenden SubstratMethod for contacting an electrical component with a substrate having a conductor structure
Bei der Kontaktierung elektrischer Bauelemente, insbesondere Halbleiterbauelemente (Chips) , auf Substraten werden meist relativ teuere Substratmaterialen, wie zum Beispiel flexible Folienträger aus Kunststoff, und teuere elektrisch leitende Klebstoffe verwendet. Viele derartige Kleber brauchen zum Aushärten aber bereits höhere Temperaturen, bei denen das Kunststoffmaterial des Folienträgers beschädigt wird oder eine darauf aufgebrachte Metallisierung abgelöst wird.When contacting electrical components, in particular semiconductor components (chips), on substrates, relatively expensive substrate materials, such as, for example, flexible plastic film carriers, and expensive electrically conductive adhesives are usually used. However, many such adhesives already require higher temperatures for curing, at which the plastic material of the film carrier is damaged or a metallization applied to it is detached.
Anzustreben ist die Verwendung billiger Lötverfahren zur Kontaktierung des Bauelementes auf dem Substrat, da diese gegenüber den elektrisch leitenden Klebern kostengünstiger sind. Lötverfahren erfordern aufgrund ihrer hohen Fügetemperaturen jedoch besonders temperaturfeste und somit teure Substratma- terialien.The aim is to use inexpensive soldering methods for contacting the component on the substrate, since these are more cost-effective than the electrically conductive adhesives. Due to their high joining temperatures, however, soldering processes require particularly temperature-resistant and therefore expensive substrate materials.
Eine weitere Schwierigkeit tritt auf, wenn die Oberfläche des Substrates, auf die das elektrische Bauelement kontaktiert werden soll, Unebenheiten aufweist, die die Höhe der Lot- schicht übersteigt. Insbesondere dann, wenn die Lotschicht nicht nur die mechanische Befestigung des Bauelementes sicherstellen soll, sondern auch zur Herstellung von elektrisch leitenden Kontakten dient, kann die flüssige Lotphase das Volumen der Hohlräume unter dem Bauelement nicht mehr vollstän- dig füllen, so daß offene elektrische Kontakte auftreten können. Bei herkömmlichen Kontaktierungsmethoden mit Leitklebern oder Lotkugeln (Lotbumps) , die eine Höhe von 30 bis 100 μm aufweisen, werden Unebenheiten im Bereich weniger μm mühelos ausgeglichen. Bei der Verwendung dünner Lotschichten können die oben genannten Probleme auftreten. Aufgabe der vorliegenden Erfindung ist es, ein Verfahren zur Kontaktierung eines elektrischen Bauelementes mit einem mit einer Leiterstruktur versehenen Substrat anzugeben, das bei einer unebenen Oberfläche des Substrates unabhängig von der Dicke eines Verbindungsmittels eine dauerhafte elektrisch leitende Verbindung ausreichender Leitf higkeit liefert.Another difficulty arises if the surface of the substrate to which the electrical component is to be contacted has unevenness that exceeds the height of the solder layer. In particular, if the solder layer is not only to ensure the mechanical fastening of the component, but is also used to produce electrically conductive contacts, the liquid solder phase can no longer completely fill the volume of the cavities under the component, so that open electrical contacts occur can. With conventional contacting methods with conductive adhesives or solder balls (solder bumps) that have a height of 30 to 100 μm, unevenness in the range of a few μm is easily compensated for. The problems mentioned above can occur when using thin layers of solder. The object of the present invention is to provide a method for contacting an electrical component with a substrate provided with a conductor structure, which provides a permanent electrically conductive connection of sufficient conductivity regardless of the thickness of a connecting means on an uneven surface of the substrate.
Diese Aufgabe wird mit dem Verfahren mit den Merkmalen des Anspruches 1 gelöst . Vorteilhafte Ausgestaltungen ergeben sich aus den abhängigen Ansprüchen.This object is achieved with the method having the features of claim 1. Advantageous configurations result from the dependent claims.
Bei dem erfindungsgemäßen Verfahren wird ein Verbindungsmittel, vorzugsweise ein metallisches Lotmaterial aus mindestens zwei metallischen oder halbleitenden chemischen Elementen, zwischen das elektrische Bauelement und die Leiterstruktur des Substrates gebracht. Dieses Lotmaterial ist so beschaffen, daß es einen Schmelzpunkt aufweist, der unterhalb einer für die Widerstandsfähigkeit des Substrates kritischen Temperatur liegt. Die Fügetemperatur bei der Kontaktierung wird derart gewählt, daß das Substrat unter Ausübung eines Drucks auf das elektrische Bauelement eine plastische Verformung erfährt, so daß das Bauelement zusammen mit der Leiterstruktur formschlüssig in das Substrat gedrückt wird.In the method according to the invention, a connecting means, preferably a metallic solder material composed of at least two metallic or semiconducting chemical elements, is placed between the electrical component and the conductor structure of the substrate. This solder material is designed so that it has a melting point that is below a temperature critical for the resistance of the substrate. The joining temperature during contacting is selected such that the substrate undergoes plastic deformation when pressure is exerted on the electrical component, so that the component is pressed into the substrate in a form-fitting manner together with the conductor structure.
Gemäß der Erfindung wird die Fügetemperatur bewußt über die Glastemperatur des Substrates erhöht, so daß das Bauelement so lange in das Substrat gedrückt werden kann bis die Unebenheiten der Substratoberfläche ausgeglichen sind. Da zumindest Teile der Leiterstruktur, welche unter dem Bauelement gelegen sind, bei diesem Vorgang mit in das Substrat gedrückt werden, muß die Leiterstruktur derart elastisch sein, daß sie nicht bricht oder reißt. Aufgrund der nur geringen Unebenheiten der Oberfläche des Substrates sind die üblichen Leiterbahnen aus Kupfer oder Nickel ausreichend dehnbar oder stauchbar.According to the invention, the joining temperature is deliberately raised above the glass transition temperature of the substrate, so that the component can be pressed into the substrate until the unevenness of the substrate surface is compensated. Since at least parts of the conductor structure, which are located under the component, are pressed into the substrate during this process, the conductor structure must be so elastic that it does not break or tear. Because of the slight unevenness of the surface of the substrate, the usual copper or nickel conductor tracks are sufficiently stretchable or compressible.
Bevorzugt wird bei dem erfindungsgemäßen Verfahren ein Substrat aus einem weichen Material verwendet, das einen Schmelzpunkt unterhalb von 120°C aufweist. Das Material kann beispielsweise aus PVC (Polyvinylchlorid), PET ( ) oder dergleichen bestehen. Substrate aus diesem Material sind sehr weich, haben einen niedrigen Schmelzpunkt und sind darüber hinaus auch sehr kostengünstig.In the method according to the invention, preference is given to using a substrate made of a soft material which has a Has melting point below 120 ° C. The material can for example consist of PVC (polyvinyl chloride), PET () or the like. Substrates made from this material are very soft, have a low melting point and are also very inexpensive.
Das erfindungsgemäße Verfahren kann verwendet werden, um ein elektrisches Bauelement rein mechanisch mit dem Substrat zu verbinden oder um elektrische Kontakte des Bauelementes di- rekt mit entsprechenden Kontaktstellen, die Teil der Leiterstruktur auf dem Substrat sind, zur Herstellung einer elektrisch leitenden Verbindung zu kontaktieren.The method according to the invention can be used to connect an electrical component to the substrate purely mechanically or to contact electrical contacts of the component directly with corresponding contact points which are part of the conductor structure on the substrate in order to produce an electrically conductive connection.
In der erst genannten Alternative könnte die Herstellung ei- ner elektrisch leitenden Verbindung beispielsweise über Bonddrähte erfolgen. Der Begriff Kontaktierung ist dann dahingehend zu verstehen, daß über die gesamte Verbindungsfläche des Bauelementes eine gleichmäßige und damit gegen Ablösungen sichere mechanische Verbindung zwischen Bauelement und Substrat gewährleistet ist.In the first alternative mentioned, an electrically conductive connection could be established, for example, using bond wires. The term contacting is then to be understood to mean that a uniform mechanical connection between the component and the substrate, which is therefore secure against detachment, is ensured over the entire connecting surface of the component.
Im letzteren Fall wird das Verbindungsmittel zwischen einen Kontakt des elektrischen Bauelementes und die entsprechenden Kontaktstellen des Leiterzuges gebracht. Vorzugsweise werden die Parameter des Verfahrens derart gewählt, daß das Verbindungsmittel zum Erstarren gebracht wird, bevor die plastische Verformung des Substrates einsetzt. Dieses Vorgehen weist den, Vorteil auf, daß laterale Materialbewegungen des Substrates während der elastischen Verformung die Lage der Kontaktstel- len nicht mehr verschieben können. Eine derartige Verschiebung könnte die elektrisch leitende Verbindung zwischen Bauelement und Substrat gegebenenfalls beeinträchtigen, indem entweder keine Verbindung hergestellt oder eine Verbindung zwischen nicht gewünschten Leitern erfolgt. Würden die late- ralen Materialbewegungen des Substrates nicht begrenzt werden, müßten die Abstände der Kontaktstellen und Leiterbahnen vergrößert werden. Dies würde jedoch einen größeren Flächenbedarf nach sich ziehen.In the latter case, the connecting means is brought between a contact of the electrical component and the corresponding contact points on the conductor track. The parameters of the method are preferably selected such that the connecting means is solidified before the plastic deformation of the substrate begins. This procedure has the advantage that lateral material movements of the substrate can no longer shift the position of the contact points during the elastic deformation. Such a shift could possibly impair the electrically conductive connection between the component and the substrate, in that either no connection is made or there is a connection between unwanted conductors. If the lateral material movements of the substrate were not limited, the distances between the contact points and conductor tracks would have to be be enlarged. However, this would require more space.
Als Verbindungsmittel wird vorzugsweise ein Lotmaterial aus mindestens zwei elementaren Metallen oder Halbleitermaterialien verwendet. Das geschmolzene Lotmaterial ist vorzugsweise so beschaffen, daß es eine Legierung oder intermetallische Verbindung oder Phase mit dem Metall der Metallschicht der Folie oder mit dem Metall des Kontaktes des Halbleiterbauele- mentes eingeht. Vorzugsweise liegt dieser Schmelzpunkt so hoch, daß die Folie bei einem Versuch, die Lotverbindung zu schmelzen, unweigerlich beschädigt würde oder zumindest die Metallschicht von der Folie abgelöst und so die gesamte Anordnung unbrauchbar würde .A solder material made from at least two elemental metals or semiconductor materials is preferably used as the connecting means. The molten solder material is preferably such that it forms an alloy or intermetallic compound or phase with the metal of the metal layer of the foil or with the metal of the contact of the semiconductor component. This melting point is preferably so high that the film would inevitably be damaged in an attempt to melt the solder connection, or at least the metal layer would be detached from the film and the entire arrangement would thus become unusable.
Ein Lotmaterial, das hierfür besonders geeignet ist, ist eine Zusammensetzung - d. h. eine Mischung aus mindestens und vorzugsweise zwei Komponenten, die ein Gemisch, eine Legierung oder eine stöchiometrische Verbindung bilden - , deren Antei- le so gewählt sind, daß die Zusammensetzung an einem eutekti- sehen Punkt oder zumindest in der Nähe eines eutektischen Punktes liegt. Für diese Wahl der Zusammensetzung gilt nämlich, daß sich bei jeder Änderung der Anteile der Komponenten der Schmelzpunkt der Zusammensetzung erhöht. Beim Schmelzen des Lotmaterials wird eine Legierung oder eine intermetallische Verbindung hergestellt, die einen Anteil des Metalls der Metallschicht der Folie oder des Kontaktes des Halbleiterbauelementes enthält, so daß die Zusammensetzung des die elektrisch leitende Verbindung bildenden Materiales von dem Eu- tektikum der ursprünglichen Zusammensetzung des Lotmaterials so wesentlich verschieden ist, daß der Schmelzpunkt erheblich höher liegt, insbesondere über den für die Folie unschädlichen Temperaturen. Als näherungsweise eutektische Zusammensetzung sei hier eine Zusammensetzung definiert, die einen Schmelzpunkt aufweist, der sich höchstens um 10°C von der Temperatur des Eutektikums unterscheidet. Als mögliches Lotmaterial, vorzugsweise in Verbindung mit einer Metallschicht der Folie aus Kupfer oder Nickel, kommt vorrangig ein Material in Frage, das Bismut (Wismut, chemisches Zeichen Bi) enthält. Eutektische oder näherungsweise eutektische (Temperaturunterschied zum Eutektikum höchstens 10 °C) Zusammensetzungen, die das Gewünschte leisten, sind Materialien aus der Gruppe von Zusammensetzung aus Bismut und Indium, Zusammensetzung aus Bismut und Zinn und Zusammensetzung aus Indium und Zinn.A solder material which is particularly suitable for this is a composition - ie a mixture of at least and preferably two components which form a mixture, an alloy or a stoichiometric compound - the proportions of which are selected such that the composition is attached to a eutectic - see point or at least close to a eutectic point. For this choice of composition, the fact that each time the proportions of the components change, the melting point of the composition increases. When the solder material is melted, an alloy or an intermetallic compound is produced which contains a proportion of the metal of the metal layer of the foil or of the contact of the semiconductor component, so that the composition of the material forming the electrically conductive connection is different from the eutectic of the original composition of the solder material is so significantly different that the melting point is considerably higher, in particular above the temperatures which are harmless to the film. An approximately eutectic composition is defined here as a composition which has a melting point which differs from the temperature of the eutectic by at most 10 ° C. As a possible solder material, preferably in connection with a metal layer of the foil made of copper or nickel, there is primarily a material that contains bismuth (bismuth, chemical symbol Bi). Eutectic or approximately eutectic (temperature difference from the eutectic at most 10 ° C) compositions that achieve the desired are materials from the group consisting of bismuth and indium, bismuth and tin and indium and tin.
Alternativ könnte auch ein thermoplastischer Kleber verwendet werden, der erstarrt bevor die plastische Verformung des Substrates einsetzt. Die Verwendung eines thermoplastischen Klebers stellt daneben noch eine Versiegelung der Kontaktstellen sicher.Alternatively, a thermoplastic adhesive could also be used, which solidifies before the plastic deformation of the substrate begins. The use of a thermoplastic adhesive also ensures that the contact points are sealed.
Zur Erwärmung der Anordnung aus dem Bauelement und dem Substrat kommen ein im Infrarot-Bereich arbeitender Laser oder ein Laser mit einer Wellenlänge < 1 μm in Betracht. Der im Infrarot-Bereich betriebene Laser erwärmt von der von demA laser operating in the infrared range or a laser with a wavelength <1 μm can be used to heat the arrangement of the component and the substrate. The laser operated in the infrared range heats up from that of the
Bauelement abgewandten Seite des Substrates her die metallischen Elemente, wodurch zunächst das Lotmaterial zum Schmelzen gebracht wird. Nach dem Abschalten des Lasers erstarrt das Lotmaterial. Die im Metall gespeicherte Wärme ist jedoch ausreichend, um das benachbarte Substrat zu erwärmen, wodurch dieses plastisch verformbar wird. Mit dem mit einer Wellenlänge < 1 μm betriebenen Laser wird das elektrische Bauelement erwärmt . Bei ausreichend langer Bestrahlung wird das Lotmaterial zunächst zum Schmelzen gebracht. Nach dem Ab- schalten des Lasers erstarrt das Lotmaterial, wobei die imThe side of the substrate facing away from the component, the metallic elements, whereby the solder material is first melted. After switching off the laser, the solder material solidifies. However, the heat stored in the metal is sufficient to heat the adjacent substrate, which makes it plastically deformable. The electrical component is heated with the laser operated with a wavelength of <1 μm. If the irradiation is long enough, the solder material is first melted. After the laser has been switched off, the solder material solidifies
Bauelement gespeicherte Wärme das benachbarte Substratmaterial ausreichend erwärmt, um unter Ausübung eines Drucks auf das Bauelement die plastische Verformung des Substrates zu bewirken. Das Verfahren der vorliegenden Erfindung wird anhand der nachfolgenden, nur schematischen Figuren weiter erläutert. Es zeigen:Heat stored in the component heats the adjacent substrate material sufficiently to bring about the plastic deformation of the substrate by exerting pressure on the component. The method of the present invention is further explained using the following, only schematic figures. Show it:
Figur 1 ein Bauelement und ein unebenes Substrat vor der Kontaktierung und1 shows a component and an uneven substrate before contacting and
Figur 2 ein Bauelement, das auf ein unebenes Substrat kontaktiert wurde.Figure 2 shows a component that has been contacted on an uneven substrate.
Figur 1 zeigt ein elektrisches Bauelement 2, das über einem Substrat 1 positioniert ist. Auf der dem Bauelement 2 zugewandten Oberfläche des Substrates 1 befindet sich eine Leiterstruktur mit Leiterzügen 3 und Kontaktstellen 4. Exempla- risch sind in dem Beispiel nur zwei Leiterzüge mit einer jeweiligen Kontaktstelle dargestellt. Aus der perspektivischen Figur nicht sichtbar ist, daß das Bauelement 2 auf seiner dem Substrat zugewandten Hauptseite zwei korrespondierende Kontakte aufweist.FIG. 1 shows an electrical component 2 that is positioned over a substrate 1. On the surface of the substrate 1 facing the component 2 there is a conductor structure with conductor tracks 3 and contact points 4. As an example, only two conductor tracks with a respective contact point are shown in the example. It is not visible from the perspective figure that the component 2 has two corresponding contacts on its main side facing the substrate.
Die dem Bauelement 2 zugewandte Oberfläche des Substrates 1 weist eine Unebenheit in Form einer exemplarischen Stufe auf. Die Stufe ist aus Gründen der Übersichtlichkeit überhöht dargestellt und wird in Wirklichkeit wesentlich weniger stark ausgeprägt ausfallen. Die Stufe muß auch nicht - wie vorliegend dargestellt - rechtwinklig zu der Oberfläche des Substrates ausgebildet sein.The surface of the substrate 1 facing the component 2 has an unevenness in the form of an exemplary step. The level is exaggerated for the sake of clarity and will in reality be much less pronounced. The step also does not have to be perpendicular to the surface of the substrate, as shown here.
Wie aus der Figur 1 ersichtlich ist, würde beim konventionel- len Kontaktieren ein Teil des Bauelementes 2 auf dem oberen Teil der Stufe zum Liegen kommen, während der andere Bereich über die Stufe hinaus stehen würde. Sofern ein Lotmaterial verwendet wird, das dicker als die Höhe der Stufe ist, kann dieser Höhenunterschied ohne Weiteres ausgeglichen werden. Wird jedoch ein Verbindungsmittel eingesetzt, das dünner als die Höhe der Stufe ist, ergibt sich ohne weitere Maßnahmen eine instabile Anordnung, durch die das Bauelement selbst durch mechanische Spannungen oder die elektrisch leitende Verbindung zwischen den Kontaktstellen 4 und den entsprechenden Kontakten des Bauelementes beeinträchtigt werden könnten.As can be seen from FIG. 1, with conventional contacting, part of the component 2 would come to rest on the upper part of the step, while the other area would protrude beyond the step. If a solder material is used that is thicker than the height of the step, this height difference can be easily compensated for. However, if a connecting means is used that is thinner than the height of the step, an unstable arrangement results without further measures, through which the component itself could be affected by mechanical stresses or the electrically conductive connection between the contact points 4 and the corresponding contacts of the component.
Erfindungsgemäß wird zur Kontaktierung zunächst auf die Kontaktstellen des Substrates 1 und/oder auf die Kontakte des Bauelementes 2 das Lotmaterial aufgebracht. Anschließend wird das Bauelement 2 mit der Oberfläche des Substrates in Kontakt gebracht, ein Druck auf das Bauelement ausgeübt und die An- Ordnung anschließend erwärmt. Die Erwärmung kann beispielsweise mit einem Laser erfolgen. Bei Verwendung eines niedrigschmelzenden Lotmaterials, wie z.B. einer Biln-Legierung, einem InSn-Eutektikums oder einer intermetallischen Phase (zum Beispiel Biln) , schmilzt das Lot und erstarrt noch bevor das Substrat soweit erwärmt ist, daß es schmilzt. Erst nach dem Erstarren des Lotmaterials setzt die plastische Verformung des Substrates ein, wodurch das Bauelement zusammen mit den darunter gelegenen Leiterzügen 3 formschlüssig in das Substrat hineingedrückt wird. Das Ergebnis ist in Figur 2 darge- stellt. According to the invention, the solder material is first applied to the contact points of the substrate 1 and / or to the contacts of the component 2 for contacting. The component 2 is then brought into contact with the surface of the substrate, pressure is exerted on the component and the arrangement is then heated. The heating can take place, for example, with a laser. When using a low-melting solder material, such as a biln alloy, an InSn eutectic or an intermetallic phase (for example biln), the solder melts and solidifies before the substrate is heated to the point that it melts. Only after the solder material has solidified does the plastic deformation of the substrate begin, as a result of which the component, together with the conductor tracks 3 underneath, is pressed into the substrate in a form-fitting manner. The result is shown in FIG. 2.
BezugszeichenlisteLIST OF REFERENCE NUMBERS
1 Substrat1 substrate
2 Elektrisches Bauelement 3 Leiterzug2 electrical component 3 conductor track
4 Kontaktstelle 4 contact point

Claims

Patentansprüche claims
1. Verfahren zur Kontaktierung eines elektrischen Bauelementes (2) , insbesondere eines Halbleiterbauelementes, auf einem eine Leiterstruktur (3) aufweisenden Substrat (1) , bei dem in einem ersten Schritt ein Verbindungsmittel, dessen Schmelzpunkt bei einer Temperatur liegt, bei der das Substrat nicht beschädigt wird, zwischen das elektrische Bauelement und der Leiterstruktur (3) des Substrates gebracht wird, und in einem zweiten Schritt das Verbindungsmittel zum Schmelzen und anschließenden Erstarren gebracht wird, so daß eine dauerhafte elektrisch leitende Verbindung hergestellt wird, dadurch gekennzeichnet, daß die Fügetemperatur über die Glastemperatur des Substrats erhöht wird, so daß das Substrat (1) unter Ausübung eines Drucks auf das elektrische Bauelement (2) eine plastische Verformung erfährt und das elektrische Bauelement zusammen mit der Leiterstruktur (3) formschlüssig in das Substrat (1) gedrückt wird.1. A method for contacting an electrical component (2), in particular a semiconductor component, on a substrate (1) having a conductor structure (3), in which in a first step a connecting means, the melting point of which is at a temperature at which the substrate is not is damaged, is brought between the electrical component and the conductor structure (3) of the substrate, and in a second step the connecting means is melted and then solidified, so that a permanent electrically conductive connection is produced, characterized in that the joining temperature is above the glass transition temperature of the substrate is increased so that the substrate (1) undergoes plastic deformation when pressure is exerted on the electrical component (2) and the electrical component together with the conductor structure (3) is positively pressed into the substrate (1).
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Leiterstruktur zumindest einen Leiterzug (3) und zumindest eine Kontaktstelle (4) aufweist und das Verbindungsmittel zwischen einen Kontakt des elektrischen Bauelementes (2) und eine Kontaktstelle des Leiterzuges (3) gebracht wird.2. The method according to claim 1, characterized in that the conductor structure has at least one conductor strip (3) and at least one contact point (4) and the connecting means between a contact of the electrical component (2) and a contact point of the conductor strip (3) is brought.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß das Verbindungsmittel zum Erstarren gebracht wird, bevor die plastische Verformung des Substrates (1) einsetzt.3. The method according to claim 1 or 2, characterized in that the connecting means is solidified before the plastic deformation of the substrate (1) begins.
4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß ein Substrat aus weichem Material mit einem Schmelzpunkt unterhalb 120°C verwendet wird.4. The method according to any one of claims 1 to 3, characterized in that a substrate made of soft material with a melting point below 120 ° C is used.
5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß das Substrat aus PVC (Polyvinylchlorid) oder PET besteht. 5. The method according to claim 4, characterized in that the substrate consists of PVC (polyvinyl chloride) or PET.
6. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß als Verbindungsmittel ein Lotmaterial aus mindestens zwei verschiedenen elementaren Metallen oder Halbleitermaterialien verwendet wird.6. The method according to any one of claims 1 to 5, characterized in that a solder material made of at least two different elemental metals or semiconductor materials is used as the connecting means.
7. Verfahren nach Anspruch 6, dadurch gekennzeichnet, daß ein Lotmaterial verwendet wird, das Bismut enthält.7. The method according to claim 6, characterized in that a solder material is used which contains bismuth.
8. Verfahren nach Anspruch 6 , dadurch gekennzeichnet , daß ein Lotmaterial verwendet wird, das ein Material aus der Gruppe von Zusammensetzung aus Bismut und Indium, Zusammensetzung aus Bismut und Zinn und Zusammensetzung aus Indium und Zinn ist .8. The method according to claim 6, characterized in that a solder material is used which is a material from the group consisting of bismuth and indium composition, bismuth and tin composition and indium and tin composition.
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, daß ein Lotmaterial verwendet wird, das eine intermetallische Verbindung oder Phase der Zusammensetzung Biln oder Biln2 ist .9. The method according to claim 8, characterized in that a solder material is used which is an intermetallic compound or phase of the composition Biln or Biln 2 .
10. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß als Verbindungsmittel ein thermoplastischer Kleber verwendet wird.10. The method according to any one of claims 1 to 5, characterized in that a thermoplastic adhesive is used as the connecting means.
11. Verfahren nach einem der Ansprüche 1 bis 10, dadurch ge- kennzeichnet, daß zur Erwärmung der Anordnung aus dem Bauelement (2) und dem Substrat (1) ein im Infrarot-Bereich arbeitender Laser verwendet wird, der durch das Substrat hindurch in Richtung des Bauelementes wirkt.11. The method according to any one of claims 1 to 10, character- ized in that for the heating of the arrangement of the component (2) and the substrate (1) an infrared laser is used, which through the substrate in the direction of the component acts.
12. Verfahren nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, daß zur Erwärmung der Anordnung aus dem Bauelement (2) und dem Substrat (1) ein Laser mit einer Wellenlänge < 1 μm verwendet wird, der durch das Bauelement hindurch in Richtung des Substrates strahlt . 12. The method according to any one of claims 1 to 10, characterized in that for heating the arrangement of the component (2) and the substrate (1), a laser with a wavelength <1 microns is used, which through the component in the direction of Substrate shines.
EP02729854A 2001-05-21 2002-04-05 Method for contacting an electrical component with a substrate comprising a conducting structure Withdrawn EP1389347A1 (en)

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DE10124770A DE10124770C1 (en) 2001-05-21 2001-05-21 Process for contacting an electrical component, especially a semiconductor component, to a substrate comprises applying a connecting unit between the electrical component
DE10124770 2001-05-21
PCT/DE2002/001254 WO2002095816A1 (en) 2001-05-21 2002-04-05 Method for contacting an electrical component with a substrate comprising a conducting structure

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