EP1285459A2 - Method for charging and discharging a process tank - Google Patents

Method for charging and discharging a process tank

Info

Publication number
EP1285459A2
EP1285459A2 EP01921357A EP01921357A EP1285459A2 EP 1285459 A2 EP1285459 A2 EP 1285459A2 EP 01921357 A EP01921357 A EP 01921357A EP 01921357 A EP01921357 A EP 01921357A EP 1285459 A2 EP1285459 A2 EP 1285459A2
Authority
EP
European Patent Office
Prior art keywords
substrates
gripper
basin
treatment
receiving slots
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01921357A
Other languages
German (de)
French (fr)
Inventor
Thomas Rodewaldt
Felix Wehrle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Wet Products GmbH
Original Assignee
Mattson Wet Products GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Wet Products GmbH filed Critical Mattson Wet Products GmbH
Publication of EP1285459A2 publication Critical patent/EP1285459A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • the present invention relates to a method for loading a treatment basin with disc-shaped substrates, in particular semiconductor wafers, and a method for unloading disc-shaped substrates, in particular semiconductor wafers from a treatment basin.
  • guide slots are provided in the side walls of the basin for receiving and guiding semiconductor wafers.
  • a lifting element which is generally arranged in the center, is provided in the form of a knife-like bar with which the wafers are lowered and raised in the basin.
  • a transport hood with guide slots is provided which correspond to the guide slots in the treatment basin.
  • a locking mechanism nism inside the hood is able to fix the wafers in the hood.
  • This system has the disadvantage that the hood must first be loaded in order to then load the treatment basin. Furthermore, the hood itself must be unloaded again after the treatment basin has been unloaded, which considerably increases the handling effort of the treatment system.
  • the structure of the hood is also relatively large and complex.
  • the hood has the problem that gases rising from the treatment pool collect in the hood and are precipitated on the side walls of the hood. It is not possible with the hood to handle substrates wetted with treatment liquid in the course of the treatment, since the treatment liquid also wets the hood itself and the guide slots provided therein. Due to the structure of the hood, the treatment liquid cannot be removed from the hood. This leads to contamination of the wafers and / or subsequent treatment areas.
  • DE-A-196 378 75 shows a system for the wet treatment of substrates in a container containing a treatment fluid.
  • the substrates with a substrate carrier are used in the container.
  • the substrates are aligned and centered in the container by means of a substrate receiving device provided in the container.
  • the substrates are moved into a hood placed over the container with lateral guide slots, the lateral guide tion slots in the hood with guide devices of the substrate receiving device are aligned.
  • a wafer cleaning device is also known from JP-A-052 706 60, in which the wafers are inserted with a wafer gripper into a container filled with treatment fluid.
  • the wafer holder is inserted with the wafers into the treatment container and the wafers are transferred to a stationary receptacle provided in the treatment container by opening the gripper.
  • the gripper is moved out of the treatment tank during the treatment.
  • the wafers are removed in the reverse manner.
  • JP 05 338 794 which has a wafer gripper with two opposite gripper arms with guides for receiving the wafer.
  • the guides in the gripper arms are made of a material that is softer than that of the wafers to prevent the substrates from being damaged by friction between the guides and the substrates.
  • the present invention is based on the object of simplifying the handling of substrates, in particular the loading and unloading of disk-shaped substrates into and out of the treatment basin and the risk of contamination of the Reduce substrates.
  • this object is achieved in a method for loading a treatment basin with disk-shaped substrates, in particular semiconductor wafers, with the following method steps: gripping the substrates with a gripper which has at least two opposing gripping elements with receiving slots facing one another; Positioning the substrate above the treatment basin such that the substrates are aligned with guide slots within the treatment basin; Lowering the gripper to partially lower the substrates into the treatment tank until the substrates have a raised substrate lifting element in the loading contact action pool; partial movement of the gripping elements into a position in which the substrates are no longer held but are guided in the receiving slots; further lowering of the substrates into the treatment basin by lowering the lifting element.
  • a treatment basin with lateral guide slots can be loaded directly by a substrate gripper in a simple manner. Since the gripping elements of the substrate gripper are controlled in such a way that they provide guidance of the substrates when lowering into the treatment basin through the lifting element, the risk of tilting and damage to the substrates is prevented.
  • the gripper can be of simple construction, and the fact that there is no closed hood with side walls greatly reduces the risk of contamination of the wafers.
  • the gripping elements preferably follow the contour of the substrates. For a seamless transition between the guidance through the gripping elements and the guidance through the guide slots within the basin, the gripping elements are lowered onto an upper edge of the basin or into a position directly above the edge.
  • the object of the invention is also achieved in a method for unloading disk-shaped substrates, in particular semiconductor wafers, from a treatment tank with a substrate lifting element and guide slots in the tank in that a gripper which has at least two opposite gripping elements with mutually facing receiving slots, above the treatment basin is positioned such that the guide slots in the basin and the receiving slots in the gripping elements are aligned with each other; the substrates are lifted and inserted into the receiving slots of the gripping elements; the gripping elements for gripping the substrates are moved towards one another; and the substrates are then lifted out of the treatment tank by lifting the gripper.
  • a gripper with a simple shape which in turn has no large areas, can be used those contaminants that could be transferred to the substrates.
  • the gripping elements follow the contour of the substrates.
  • the gripping elements are preferably positioned on or just above an upper edge of the treatment basin during the lifting of the substrates.
  • the gripper preferably grips the substrates below their center line.
  • FIG. 1 shows a perspective view of a wafer treatment device, certain components being omitted to simplify the illustration;
  • Figure 2 is a perspective view of a substrate gripper, the
  • Figure 3 is a schematic representation of slots in racks of the substrate gripper
  • Figures 4, 5 and 6 different process steps when loading a semiconductor wafer in a treatment tank.
  • FIG. 1 shows a device 1 for treating semiconductor wafers.
  • the device has a wafer handling device 3 with a gripper 5, which can best be seen in FIG. 2.
  • the gripper 5 is formed by two essentially horizontally arranged toothed racks 7, 8 which are fastened to rotatable shafts 13, 14 via respective arms 10, 11.
  • the racks 7 have receiving slots 15 for
  • the receiving slots 15 of the racks 7 and 8 face each other and have a guide and centering area 16 and a holding area 17, as best shown in FIG. 3 can be seen.
  • the guiding and centering area 16 has inclined surfaces 18 which run towards one another and on which the semiconductor wafers can slide in order to achieve centering with respect to the receiving slots 15.
  • the holding area 17 directly adjoins the guiding and centering area 16 at the point where the inclined surfaces 18 are closest to one another.
  • the holding area 17 also has inclined surfaces 19 which run towards one another.
  • the inclined surfaces 19 converge towards one another at an acute angle, like the inclined surfaces 18. In the holding area of the receiving slots, tight and precise guidance and a secure hold of the wafers 20 are ensured.
  • the racks 7, 8 can be moved towards and away from one another by rotating the respective shafts 13, 14, as will be described in more detail below.
  • the gripper 5 can also be moved vertically and horizontally, specifically by means of corresponding movement mechanisms which are arranged on a vertically running rail 24 or on a horizontally running guide rail 26.
  • the device 1 has a plurality of treatment basins, which are not shown in FIG. 1 to simplify the illustration.
  • FIGS. 4 to 6 show treatment tanks 28 schematically.
  • the treatment tanks can be filled with a treatment fluid via lines (not shown).
  • FIG. 1 shows vertical guide rails 35 for two lifting elements 33 arranged in different treatment basins.
  • the device 1 shown in FIG. 1 has a hood 36 which can be placed over the treatment basin (not shown) and which can be moved via suitable vertical and horizontal guide rails of the device. The hood 36 is used when the wafer is dried according to the Marangoni method after treatment in one of the basins.
  • the movement of the gripper 5 or the hood 36 takes place via suitable drive units, e.g. Servomotors 37.
  • a large number of semiconductor wafers 20 are gripped by the gripper 5.
  • the wafers 20 are received in the holding areas 17 of the receiving slots 15 of the toothed racks 7, 8 and guided laterally.
  • the gripper 5 is then moved over the treatment basin 28 in such a way that the wafers 20 are aligned with guide slots formed between the guide elements 30, 31.
  • the gripper 5 is then lowered into the position shown in FIG. 4, in which the toothed racks 7, 8 are arranged just above an upper edge of the treatment basin 28.
  • the wafers 20 are partially introduced into the treatment basin 28.
  • the lifting element 33 is in a raised position and contacts the wafer 20 at a lower point.
  • FIG. 5 shows an exemplary intermediate position of the lifting element 33 during the lowering process.
  • the wafers 20 are still guided through the toothed racks 7, 8.
  • the wafers 20 are also already guided through the guide slots formed between the guide projections 30, 31.
  • FIG. 6 shows a completely lowered position of the wafers 20, in which they rest on the lifting element 33 and are only guided through the guide projections 30, 31 in the treatment basin.
  • the gripper 5 can, as soon as the wafers 20 are guided through the guide projections 30, 31 in the basin 28, swing open further and be moved away from the region of the treatment basin, for example in order to load or treat another treatment basin. to unload.
  • the lifting element 33 When the lifting element 33 is lowered, it is possible to control the toothed racks 7, 8 in such a way that they follow the contour of the wafers 20, i.e. that the racks 7, 8 are moved towards or away from each other in accordance with the wafer contour. This provides a particularly long guidance when the wafers are lowered by the toothed racks 7, 8.
  • the guide elements 30, 31 within the treatment basin 28 can therefore be reduced to a minimum, which improves the flow conditions in the basin.
  • the unloading of the treatment basin 28 takes place in the opposite way to the loading.
  • the gripper 5 is moved into the position shown in FIG. 6 above the basin 28, the guide regions 16 of the receiving slots 15 of the toothed racks 7, 8 being aligned with the guide slots in the treatment basin.
  • the wafers are over the Lifting element 33 is raised and accommodated in the guide areas 16, the wafers 20 being centered on the receiving slots 15 of the toothed racks 7, 8 because of the conically shaped guide surfaces, as shown in FIG.
  • the wafers When the wafers are raised to such an extent that the racks 7, 8 lie in a predetermined position, for example below a center line of the wafers 20, they are moved towards one another in order to insert and grip the wafers 20 in the holding regions 17 of the receiving slots, such as it is shown in Figure 3. Finally, the gripper 5 is raised in order to completely lift the wafer 20 out of the basin 28.
  • the shape of the gripper 5 can deviate from the shape shown.
  • the racks 7, 8 it is not necessary for the racks 7, 8 to be pivoted via the shafts 13, 14 and the connecting arms 10, 11. Rather, it is also possible to move the racks 7, 8 linearly towards and away from one another.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Specific Conveyance Elements (AREA)

Abstract

The invention relates to a method for charging and discharging a process tank. The aim of the invention is to simplify the charging and discharging of a process tank with disc-shaped substrates. To this end, the disc-shaped substrates are picked up during charging by a gripper that comprises at least two opposite gripper elements with receiving slots facing one another. The substrates are positioned above the process tank in such a manner that they are aligned with guide slots within the process tank. The gripper is lowered so as to partially lower the substrates into the process tank until they contact a lifted substrate lifting element inside the process tank. The gripper elements are then moved apart into a position in which the substrates are no longer held but are still guided in the receiving slots and they are further lowered into the process tank by lowering the lifting element. For discharging the substrates, a gripper that comprises at least two opposite gripper elements with receiving slots facing one another is positioned above the process tank in such a manner that the guide slots in the tank and the receiving slots in the gripper elements are aligned with one another. The substrates are then lifted by the substrate lifting element and introduced into the receiving slots of the gripper elements. When a predetermined position is reached, the gripper elements are moved towards one another in order to grip the substrates and the substrates are lifted out of the process tank by lifting the gripper.

Description

Verfahren zum Be- und Entladen eines Behandlunqsbeckens Process for loading and unloading a treatment basin
Die vorliegende Erfindung betrifft ein Verfahren zum Beladen eines Behandlungsbeckens mit scheibenförmigen Substraten, insbesondere Halbleiterwa- fern, sowie ein Verfahren zum Entladen von scheibenförmigen Substraten, insbesondere Halbleiterwafem aus einem Behandlungsbecken.The present invention relates to a method for loading a treatment basin with disc-shaped substrates, in particular semiconductor wafers, and a method for unloading disc-shaped substrates, in particular semiconductor wafers from a treatment basin.
In der Halbleiterindustrie ist es bekannt, daß Halbleiterwafem unterschiedlichen Behandlungsschritten unterzogen werden müssen, die zumindest teil- weise in Behandlungsbecken ablaufen. Während der Behandlung werden die Halbleiterwafer üblicherweise in anhebbaren Waferhaltern aufgenommen, um die Wafer in einer vorbestimmten Ausrichtung in dem Becken zu halten. Die anhebbaren Waferhalter werden ebenfalls zum Be- und Entladen der Wafer verwendet. Derartige Waferhalter besitzen jedoch unterschiedliche Nachteile, wie z.B. ein großes Volumen, was zu großen Behandlungsbecken führt. Darüber hinaus besteht die Gefahr, daß beim Herausheben des Waferhalters aus dem Behandlungsbecken an den Kontaktstellen zwischen Wafer und Waferhalter Flüssigkeit anhaftet, was die weitere Behandlung der Wafer beeinträchtigt. Darüber hinaus stören derartige Waferhalter die Strömungsbedingungen innerhalb des Behandlungsbeckens, was die Homogenität der Substratbehandlung beeinträchtigen kann. Ein Beispiel für ein System, bei dem die Halbleiterwafer mit einem Waferhalter in ein Behandlungsbecken eingebracht und aus diesem herausgehoben werden ist in dem US-Patent Nr. 5,370,142 dargestellt.It is known in the semiconductor industry that semiconductor wafers have to be subjected to different treatment steps, which at least partly take place in treatment tanks. During treatment, the semiconductor wafers are typically received in liftable wafer holders to hold the wafers in the basin in a predetermined orientation. The liftable wafer holders are also used to load and unload the wafers. However, such wafer holders have different disadvantages, e.g. a large volume, which leads to large treatment pools. In addition, there is a risk that when the wafer holder is lifted out of the treatment basin, liquid adheres to the contact points between the wafer and the wafer holder, which impairs the further treatment of the wafers. In addition, such wafer holders disrupt the flow conditions within the treatment basin, which can impair the homogeneity of the substrate treatment. An example of a system in which the semiconductor wafers are introduced into and removed from a treatment basin with a wafer holder is shown in US Pat. No. 5,370,142.
Bei einer weiteren Art Behandlungsbecken sind in den Seitenwänden des Beckens Führungsschlitze zur Aufnahme und Führung von Halbleiterwafem vorgesehen. Um in Vertikalrichtung eine Unterstützung der Wafer vorzusehen ist ein in der Regel mittig angeordnetes Hubelement in Form einer messerar- tigen Leiste vorgesehen, mit der die Wafer im Becken abgesenkt und angehoben werden. Zum Be- und Entladen eines derartigen Behandlungsbeckens ist eine Transporthaube mit Führungsschlitzen vorgesehen, die den Führungsschlitzen in dem Behandlungsbecken entsprechen. Ein Verriegelungsmecha- nismus innerhalb der Haube ist in der Lage die Wafer in der Haube zu fixieren. Beim Beladen des Behandlungsbeckens wird die zuvor mit Wafern bestückte Haube über das Becken gefahren und das Hubelement wird angehoben und in Kontakt mit den Wafern gebracht. Anschließend wird die Verriegelung gelöst und das Hubelement abgesenkt, wobei die Wafer zunächst durch die Führungsschlitze in der Haube und anschließend durch die Führungsschlitze in dem Becken geführt sind. Ein Beispiel für ein derartiges System ist in der auf dieselbe Anmelderin zurückgehenden DE-A-196 52 526 dargestellt.In another type of treatment basin, guide slots are provided in the side walls of the basin for receiving and guiding semiconductor wafers. In order to provide support for the wafers in the vertical direction, a lifting element, which is generally arranged in the center, is provided in the form of a knife-like bar with which the wafers are lowered and raised in the basin. To load and unload such a treatment basin, a transport hood with guide slots is provided which correspond to the guide slots in the treatment basin. A locking mechanism nism inside the hood is able to fix the wafers in the hood. When loading the treatment basin, the hood previously loaded with wafers is moved over the basin and the lifting element is raised and brought into contact with the wafers. The lock is then released and the lifting element is lowered, the wafers first being guided through the guide slots in the hood and then through the guide slots in the basin. An example of such a system is shown in DE-A-196 52 526, which goes back to the same applicant.
Bei diesem System ergibt sich der Nachteil, daß zunächst die Haube beladen werden muß, um anschließend das Behandlungsbecken zu beladen. Ferner muß die Haube nach dem Entladen des Behandlungsbeckens wiederum selbst entladen werden was den Handhabungsaufwand des Behandlungssy- stems erheblich erhöht. Der Aufbau der Haube ist ferner relativ groß und aufwendig. Darüber hinaus ergibt sich bei der Haube das Problem, daß sich aus dem Behandlungsbecken aufsteigende Gase in der Haube sammeln und an den Seitenwänden der Haube niederschlagen. Eine im Behandlungsablauf notwendige Handhabung von mit Behandlungsflüssigkeit benetzten Substra- ten ist mit der Haube nicht möglich, da die Behandlungsflüssigkeit dabei auch die Haube selbst und die darin angebrachten Führungsschlitze benetzt. Durch den Aufbau der Haube kann die Behandlungsflüssigkeit nicht aus der Haube entfernt werden. Dies führt zu Verunreinigungen der Wafer und/oder nachfolgender Behandlungsbereiche.This system has the disadvantage that the hood must first be loaded in order to then load the treatment basin. Furthermore, the hood itself must be unloaded again after the treatment basin has been unloaded, which considerably increases the handling effort of the treatment system. The structure of the hood is also relatively large and complex. In addition, the hood has the problem that gases rising from the treatment pool collect in the hood and are precipitated on the side walls of the hood. It is not possible with the hood to handle substrates wetted with treatment liquid in the course of the treatment, since the treatment liquid also wets the hood itself and the guide slots provided therein. Due to the structure of the hood, the treatment liquid cannot be removed from the hood. This leads to contamination of the wafers and / or subsequent treatment areas.
Die DE-A-196 378 75 zeigt eine Anlage zur Naßbehandlung von Substraten in einem ein Behandlungsfluid enthaltenen Behälter. Bei dieser Anlage werden die Substrate mit einem Substratträger in dem Behälter eingesetzt. Beim Herausfahren erfolgt eine Ausrichtung und Zentrierung der Substrate im Behälter durch eine im Behälter vorgesehene Substrataufnahmevorrichtung. Beim Herausfahren werden die Substrate in eine über den Behälter gebrachte Haube mit seitlichen Führungsschlitzen hinein bewegt, wobei die seitlichen Füh- rungsschlitze in der Haube mit Führungsvorrichtungen der Substrataufnahmevorrichtung ausgerichtet sind.DE-A-196 378 75 shows a system for the wet treatment of substrates in a container containing a treatment fluid. In this system, the substrates with a substrate carrier are used in the container. When moving out, the substrates are aligned and centered in the container by means of a substrate receiving device provided in the container. When moving out, the substrates are moved into a hood placed over the container with lateral guide slots, the lateral guide tion slots in the hood with guide devices of the substrate receiving device are aligned.
Aus der JP-A-052 706 60 ist ferner eine Wafer-Reinigungsvorrichtung be- kannt, bei der die Wafer mit einem Wafergreifer in einen mit Behandlungsfluid gefüllten Behälter eingesetzt werden. Der Waferhalter wird mit den Wafern in den Behandlungsbehälter eingeführt und die Wafer werden an eine stationäre im Behandlungsbehälter vorgesehene Aufnahme übergeben, indem der Greifer geöffnet wird. Während der Behandlung wird der Greifer aus dem Be- handlungsbecken heraus bewegt. Eine Entnahme der Wafer erfolgt in umgekehrter Weise.A wafer cleaning device is also known from JP-A-052 706 60, in which the wafers are inserted with a wafer gripper into a container filled with treatment fluid. The wafer holder is inserted with the wafers into the treatment container and the wafers are transferred to a stationary receptacle provided in the treatment container by opening the gripper. The gripper is moved out of the treatment tank during the treatment. The wafers are removed in the reverse manner.
Ferner sei auf die JP 05 338 794 verwiesen, die einen Wafergreifer mit zwei gegenüberliegenden Greifarmen mit Führungen zur Aufnahme der Wafer auf- weist. Die Führungen in den Greifarmen sind aus einem Material, das weicher ist als das der Wafer, um zu verhindern, daß die Substrate durch eine Reibung zwischen den Führungen und den Substraten beschädigt werden.Furthermore, reference is made to JP 05 338 794, which has a wafer gripper with two opposite gripper arms with guides for receiving the wafer. The guides in the gripper arms are made of a material that is softer than that of the wafers to prevent the substrates from being damaged by friction between the guides and the substrates.
Ausgehend von dem oben genannten Stand der Technik liegt der vorliegen- den Erfindung die Aufgabe zugrunde, die Handhabung von Substraten, insbesondere das Be- und Entladen von scheibenförmigen Substraten in ein Behandlungsbecken hinein bzw. aus dem Behandlungsbecken heraus zu vereinfachen und die Gefahr von Verunreinigungen der Substrate zu verringern.Starting from the above-mentioned prior art, the present invention is based on the object of simplifying the handling of substrates, in particular the loading and unloading of disk-shaped substrates into and out of the treatment basin and the risk of contamination of the Reduce substrates.
Erfindungsgemäß wird diese Aufgabe bei einem Verfahren zum Beladen eines Behandlungsbeckens mit scheibenförmigen Substraten, insbesondere Halbleiterwafem, mit folgenden Verfahrensschritten gelöst: Ergreifen der Substrate mit einem Greifer der wenigstens zwei gegenüberliegende Greifelemente mit zueinander weisenden Aufnahmeschlitzen aufweist; Positionieren der Sub- strafe oberhalb des Behandlungsbeckens, derart, daß die Substrate zu Führungsschlitzen innerhalb des Behandlungsbeckens ausgerichtet sind; Absenken des Greifers zum teilweisen Absenken der Substrate in das Behandlungsbecken, bis die Substrate ein angehobenes Substrat-Hubelement im Be- handlungsbecken kontaktieren; teilweises Auseinanderbewegen der Greifelemente in eine Stellung in der die Substrate nicht mehr gehalten werden jedoch in den Aufnahmeschlitzen geführt sind; weiteres Absenken der Substrate in das Behandlungsbecken durch Absenken des Hubelementes. Bei diesem Verfahren kann auf einfache Weise ein Behandlungsbecken mit seitlichen Führungsschlitzen direkt durch einen Substratgreifer beladen werden. Da die Greifelemente des Substratgreifers so gesteuert werden, daß sie eine Führung der Substrate beim Absenken in das Behandlungsbecken durch das Hubelement vorsehen, wird die Gefahr eines Verkantens und einer Beschädi- gung der Substrate verhindert. Der Greifer kann einfach aufgebaut sein, und dadurch, daß keine geschlossene Haube mit Seitenwänden vorgesehen ist, wird die Gefahr einer Verunreinigung der Wafer stark reduziert.According to the invention, this object is achieved in a method for loading a treatment basin with disk-shaped substrates, in particular semiconductor wafers, with the following method steps: gripping the substrates with a gripper which has at least two opposing gripping elements with receiving slots facing one another; Positioning the substrate above the treatment basin such that the substrates are aligned with guide slots within the treatment basin; Lowering the gripper to partially lower the substrates into the treatment tank until the substrates have a raised substrate lifting element in the loading contact action pool; partial movement of the gripping elements into a position in which the substrates are no longer held but are guided in the receiving slots; further lowering of the substrates into the treatment basin by lowering the lifting element. In this method, a treatment basin with lateral guide slots can be loaded directly by a substrate gripper in a simple manner. Since the gripping elements of the substrate gripper are controlled in such a way that they provide guidance of the substrates when lowering into the treatment basin through the lifting element, the risk of tilting and damage to the substrates is prevented. The gripper can be of simple construction, and the fact that there is no closed hood with side walls greatly reduces the risk of contamination of the wafers.
Um eine möglichst lange Führung der Substrate durch den Greifer zu ge- währleisten, folgen die Greifelemente vorzugsweise der Kontur der Substrate. Für einen möglichst nahtlosen Übergang zwischen der Führung durch die Greifelemente und die Führung durch die Führungsschlitze innerhalb des Beckens, werden die Greifelemente auf eine Oberkante des Beckens oder in eine Position direkt oberhalb der Kante abgesenkt.In order to ensure that the substrates are guided as long as possible by the gripper, the gripping elements preferably follow the contour of the substrates. For a seamless transition between the guidance through the gripping elements and the guidance through the guide slots within the basin, the gripping elements are lowered onto an upper edge of the basin or into a position directly above the edge.
Die erfindungsgemäße Aufgabe wird auch bei einem Verfahren zum Entladen von scheibenförmigen Substraten, insbesondere Halbleiterwafem, aus einem Behandlungsbecken mit einem Substrat-Hubelement und Führungsschlitzen im Becken dadurch gelöst, daß ein Greifer, der wenigstens zwei gegenüber- liegende Greifelemente mit zueinander weisenden Aufnahmeschlitzen aufweist, oberhalb des Behandlungsbeckens derart positioniert wird, daß die Führungsschlitze im Becken und die Aufnahmeschlitze in den Greifelementen zueinander ausgerichtet sind; die Substrate angehoben und in die Aufnahmeschlitze der Greifelemente eingeführt werden; die Greifelement zum Ergreifen der Substrate aufeinander zu bewegt werden; und die Substrate anschließend durch Anheben des Greifers aus dem Behandlungsbecken herausgehoben werden. Bei diesem Entladeverfahren kann ein Greifer mit einer einfachen Form verwendet werden, der wiederum keine großen Flächen aufweist, an denen Verunreinigungen anhaften, die auf die Substrate übertragen werden könnten.The object of the invention is also achieved in a method for unloading disk-shaped substrates, in particular semiconductor wafers, from a treatment tank with a substrate lifting element and guide slots in the tank in that a gripper which has at least two opposite gripping elements with mutually facing receiving slots, above the treatment basin is positioned such that the guide slots in the basin and the receiving slots in the gripping elements are aligned with each other; the substrates are lifted and inserted into the receiving slots of the gripping elements; the gripping elements for gripping the substrates are moved towards one another; and the substrates are then lifted out of the treatment tank by lifting the gripper. With this unloading method, a gripper with a simple shape, which in turn has no large areas, can be used those contaminants that could be transferred to the substrates.
Um eine möglichste frühe Führung der Substrate beim Anheben derselben durch das Substrat-Hubelement vorzusehen, folgen die Greifelemente der Kontur der Substrate. Vorzugsweise werden die Greifelemente während des Anhebens der Substrate auf oder kurz oberhalb einer Oberkante des Behandlungsbeckens positioniert. Für einen sicheren Halt der Substrate greift der Greifer die Substrate vorzugsweise unterhalb ihrer Mittellinie.In order to provide for the substrates to be guided as early as possible when the substrate is lifted by the substrate lifting element, the gripping elements follow the contour of the substrates. The gripping elements are preferably positioned on or just above an upper edge of the treatment basin during the lifting of the substrates. For a secure hold of the substrates, the gripper preferably grips the substrates below their center line.
Die Erfindung wird nachfolgend anhand eines bevorzugten Ausführungsbeispiels unter Bezugnahme auf die Zeichnungen näher erläutert. Es zeigen:The invention is explained in more detail below on the basis of a preferred exemplary embodiment with reference to the drawings. Show it:
Figur 1 eine perspektivische Ansicht einer Wafer- Behandlungsvorrichtung, wobei zur Vereinfachung der Darstellung bestimmte Bauteile weggelassen sind; Figur 2 eine perspektivische Ansicht eines Substratgreifers, der beimFIG. 1 shows a perspective view of a wafer treatment device, certain components being omitted to simplify the illustration; Figure 2 is a perspective view of a substrate gripper, the
Verfahren gemäß der vorliegenden Erfindung eingesetzt wird; Figur 3 eine schematische Darstellung von Schlitzen in Zahnstangen des Substratgreifers;Method according to the present invention is used; Figure 3 is a schematic representation of slots in racks of the substrate gripper;
Figuren 4, 5 und 6 unterschiedliche Verfahrensschritte beim Beladen eines Halbleiterwafers in ein Behandlungsbecken.Figures 4, 5 and 6 different process steps when loading a semiconductor wafer in a treatment tank.
Figur 1 zeigt eine Vorrichtung 1 zum Behandeln von Halbleiterwafem. Die Vorrichtung weist eine Waferhandhabungsvorrichtung 3 mit einem Greifer 5 auf, der am besten in Figur 2 zu erkennen ist.FIG. 1 shows a device 1 for treating semiconductor wafers. The device has a wafer handling device 3 with a gripper 5, which can best be seen in FIG. 2.
Der Greifer 5 wird durch zwei im wesentlichen horizontal angeordnete Zahnstangen 7, 8 gebildet, die über jeweilige Arme 10, 1 1 an drehbaren Wellen, 13, 14 befestigt sind. Die Zahnstangen 7 weisen Aufnahmeschlitze 15 zurThe gripper 5 is formed by two essentially horizontally arranged toothed racks 7, 8 which are fastened to rotatable shafts 13, 14 via respective arms 10, 11. The racks 7 have receiving slots 15 for
Aufnahme und Führung von Halbleiterwafem 20 auf. Die Aufnahmeschlitze 15 der Zahnstangen 7 und 8 weisen zueinander und weisen einen Fuhrungs- und Zentrierbereich 16 sowie einen Haltebereich 17 auf, wie am besten in Figur 3 zu erkennen ist. Der Fuhrungs- und Zentrierbereich 16 weist schräge, aufeinander zu laufende Oberflächen 18 auf, auf denen die Halbleiterwafer entlanggleiten können, um eine Zentrierung bezüglich der Aufnahmeschlitze 15 zu erreichen. Der Haltebereich 17 schließt direkt an den Fuhrungs- und Zen- trierbereich 16 an, und zwar an dem Punkt, wo die schrägen Oberflächen 18 am nächsten zueinander liegen. Der Haltebereich 17 weist ebenfalls schräge, aufeinander zu laufende Oberflächen 19 auf. Die schrägen Oberflächen 19 laufen mit einem spitzeren Winkel aufeinander zu, wie die schrägen Flächen 18. Im Haltebereich der Aufnahmeschlitze wird eine enge und genaue Füh- rung sowie ein sicherer Halt der Wafer 20 sichergestellt. Über eine Drehung der jeweiligen Wellen 13, 14 sind die Zahnstangen 7,8 aufeinander zu und voneinander weg bewegbar, wie nachfolgend noch näher beschrieben wird.Recording and guiding of semiconductor wafers 20. The receiving slots 15 of the racks 7 and 8 face each other and have a guide and centering area 16 and a holding area 17, as best shown in FIG. 3 can be seen. The guiding and centering area 16 has inclined surfaces 18 which run towards one another and on which the semiconductor wafers can slide in order to achieve centering with respect to the receiving slots 15. The holding area 17 directly adjoins the guiding and centering area 16 at the point where the inclined surfaces 18 are closest to one another. The holding area 17 also has inclined surfaces 19 which run towards one another. The inclined surfaces 19 converge towards one another at an acute angle, like the inclined surfaces 18. In the holding area of the receiving slots, tight and precise guidance and a secure hold of the wafers 20 are ensured. The racks 7, 8 can be moved towards and away from one another by rotating the respective shafts 13, 14, as will be described in more detail below.
Zur Drehung der Wellen 13, 14 ist eine Antriebseinheit 22 vorgesehen, die am besten in Figur 1 zu erkennen ist. Der Greifer 5 ist ferner vertikal und horizontal bewegbar, und zwar über entsprechende Bewegungsmechanismen die an einer vertikal verlaufenden Schiene 24 bzw. an einer horizontal verlaufenden Führungsschiene 26 angeordnet sind. Die Vorrichtung 1 weist mehrere Behandlungsbecken auf, die zur Vereinfachung der Darstellung in Figur 1 nicht gezeigt sind.A drive unit 22, which can best be seen in FIG. 1, is provided for rotating the shafts 13, 14. The gripper 5 can also be moved vertically and horizontally, specifically by means of corresponding movement mechanisms which are arranged on a vertically running rail 24 or on a horizontally running guide rail 26. The device 1 has a plurality of treatment basins, which are not shown in FIG. 1 to simplify the illustration.
Die Figuren 4 bis 6 zeigen jedoch schematisch Behandlungsbecken 28. Die Behandlungsbecken sind über nicht dargestellte Leitungen mit einem Be- handlungsfluid befüllbar.However, FIGS. 4 to 6 show treatment tanks 28 schematically. The treatment tanks can be filled with a treatment fluid via lines (not shown).
An gegenüberliegenden Innenwände des Behandlungsbeckens 28 sind sich in den Innenraum des Beckens erstreckende Führungsvorsprünge 30, 31 vorgesehen, die dazwischen Führungsschlitze zur Aufnahme und Führung der Halbleiterwafer bilden. Innerhalb des Beckens 28 befindet sich ferner ein Hu- belement 33 in der Form eines messerartigen Stegs, der in Vertikalrichtung verschiebbar getragen ist. In Figur 1 sind vertikale Führungsschienen 35 für zwei, in unterschiedlichen Behandlungsbecken angeordnete Hubelemente 33 dargestellt. Die in Figur 1 dargestellte Vorrichtung 1 weist eine über den nicht dargestellten Behandlungsbecken plazierbare Haube 36 auf, die über geeignete vertikale und horizontale Führungsschienen der Vorrichtung beweglich ist. Die Haube 36 wird eingesetzt , wenn die Wafer nach einer Behandlung in einem der Becken gemäß dem Marangoni-Verfahren getrocknet wird.On opposite inner walls of the treatment basin 28 there are guide projections 30, 31 which extend into the interior of the basin and which form guide slots between them for receiving and guiding the semiconductor wafers. Within the basin 28 there is also a lever element 33 in the form of a knife-like web, which is supported so as to be displaceable in the vertical direction. 1 shows vertical guide rails 35 for two lifting elements 33 arranged in different treatment basins. The device 1 shown in FIG. 1 has a hood 36 which can be placed over the treatment basin (not shown) and which can be moved via suitable vertical and horizontal guide rails of the device. The hood 36 is used when the wafer is dried according to the Marangoni method after treatment in one of the basins.
Die Bewegung des Greifers 5 bzw. der Haube 36 erfolgt über geeignete Antriebseinheiten wie z.B. Servomotoren 37.The movement of the gripper 5 or the hood 36 takes place via suitable drive units, e.g. Servomotors 37.
Anhand der Figuren 4 bis 6 wird nachfolgend das erfindungsgemäße Beladen des Behandlungsbeckens 28 mit Halbleiterwafem 20 beschrieben.The loading of the treatment basin 28 with semiconductor wafers 20 according to the invention is described below with reference to FIGS. 4 to 6.
Zunächst wird eine Vielzahl von Halbleiterwafem 20 durch den Greifer 5 er- griffen. Dabei sind die Wafer 20 in den Haltebereichen 17 der Aufnahmeschlitze 15 der Zahnstangen 7, 8 aufgenommen und seitlich geführt.First, a large number of semiconductor wafers 20 are gripped by the gripper 5. The wafers 20 are received in the holding areas 17 of the receiving slots 15 of the toothed racks 7, 8 and guided laterally.
Anschließend wird der Greifer 5 so über das Behandlungsbecken 28 gefahren, das die Wafer 20 mit zwischen den Führungselementen 30, 31 ausgebil- deten Führungsschlitzen ausgerichtet sind. Anschließend wird der Greifer 5 in die in Figur 4 dargestellte Position abgesenkt, in der die Zahnstangen 7, 8 kurz oberhalb einer Oberkante des Behandlungsbeckens 28 angeordnet sind. Dabei werden die Wafer 20 teilweise in das Behandlungsbecken 28 eingeführt. Das Hubelement 33 befindet sich in einer angehobenen Position und kontaktiert die Wafer 20 an einem unteren Punkt.The gripper 5 is then moved over the treatment basin 28 in such a way that the wafers 20 are aligned with guide slots formed between the guide elements 30, 31. The gripper 5 is then lowered into the position shown in FIG. 4, in which the toothed racks 7, 8 are arranged just above an upper edge of the treatment basin 28. The wafers 20 are partially introduced into the treatment basin 28. The lifting element 33 is in a raised position and contacts the wafer 20 at a lower point.
Nun werden die Zahnstangen 7, 8 durch Drehen der jeweiligen Wellen 13, 14 voneinander weg bewegt, so daß sich die Wafer 20 aus den Haltebereichen 17 der Aufnahmeschlitze 15 heraus bewegen und somit nicht mehr durch den Greifer 5 gehalten werden sondern mit ihrem gesamten Gewicht auf dem Hubelement 3 aufliegen. Dabei werden die Zahnstangen 7, 8 jedoch nur soweit auseinander bewegt, daß die Wafer 20 noch in den Fuhrungs- und Zentrierbereichen 16 der Aufnahmeschlitze 15 aufgenommen und geführt sind. Anschließend wird das Hubelement 33 abgesenkt, wodurch auch die Wafer 20 in das Behandlungsbecken 28 abgesenkt werden. Figur 5 zeigt eine beispielhafte Zwischenposition des Hubelements 33 während des Absenkvorgangs. Wie in Figur 4 gut zu erkennen ist, sind die Wafer 20 noch immer durch die Zahnstangen 7, 8 geführt. Gleichzeitig sind die Wafer 20 jedoch auch schon durch die zwischen den Führungsvorsprüngen 30, 31 gebildeten Führungsschlitze geführt.Now the racks 7, 8 are moved away from one another by rotating the respective shafts 13, 14, so that the wafers 20 move out of the holding areas 17 of the receiving slots 15 and are therefore no longer held by the gripper 5 but with their entire weight rest on the lifting element 3. The racks 7, 8 are only moved apart to such an extent that the wafers 20 are still received and guided in the guiding and centering regions 16 of the receiving slots 15. The lifting element 33 is then lowered, as a result of which the wafers 20 are also lowered into the treatment basin 28. FIG. 5 shows an exemplary intermediate position of the lifting element 33 during the lowering process. As can be clearly seen in FIG. 4, the wafers 20 are still guided through the toothed racks 7, 8. At the same time, however, the wafers 20 are also already guided through the guide slots formed between the guide projections 30, 31.
Figur 6 zeigt eine vollständig abgesenkte Position der Wafer 20, in der sie auf dem Hubelement 33 aufliegen und nur durch die Führungsvorsprünge 30, 31 im Behandlungsbecken geführt sind.FIG. 6 shows a completely lowered position of the wafers 20, in which they rest on the lifting element 33 and are only guided through the guide projections 30, 31 in the treatment basin.
Obwohl dies in den Figuren nicht dargestellt ist, kann der Greifer 5 sobald die Wafer 20 durch die Führungsvorsprünge 30, 31 im Becken 28 geführt sind noch weiter aufschwenken und aus dem Bereich des Behandlungsbeckens weg bewegt werden, um beispielsweise ein weiteres Behandlungsbecken zu beladen bzw. zu entladen.Although this is not shown in the figures, the gripper 5 can, as soon as the wafers 20 are guided through the guide projections 30, 31 in the basin 28, swing open further and be moved away from the region of the treatment basin, for example in order to load or treat another treatment basin. to unload.
Beim Absenken des Hubelements 33 ist es möglich, die Zahnstangen 7, 8 derart zu steuern, daß sie der Kontur der Wafer 20 folgen, d.h. daß die Zahnstangen 7, 8 entsprechend der Waferkontur aufeinander zu oder voneinander weg bewegt werden. Hierdurch wird eine besonders lange Führung beim Absenken der Wafer durch die Zahnstangen 7, 8 vorgesehen. Daher können die Führungselemente 30, 31 innerhalb des Behandlungsbeckens 28 auf ein Minimum reduziert werden, was die Strömungsverhältnisse im Becken verbessert.When the lifting element 33 is lowered, it is possible to control the toothed racks 7, 8 in such a way that they follow the contour of the wafers 20, i.e. that the racks 7, 8 are moved towards or away from each other in accordance with the wafer contour. This provides a particularly long guidance when the wafers are lowered by the toothed racks 7, 8. The guide elements 30, 31 within the treatment basin 28 can therefore be reduced to a minimum, which improves the flow conditions in the basin.
Das Entladen des Behandlungsbeckens 28 erfolgt in umgekehrter Weise zum Beladen. So wird zunächst der Greifer 5 in die in Figur 6 gezeigte Position oberhalb des Beckens 28 bewegt, wobei die Führungsbereiche 16 der Aufnahmeschlitze 15 der Zahnstangen 7,8 mit den Führungsschlitzen in dem Behandlungsbecken ausgerichtet sind. Anschließend werden die Wafer über das Hubelement 33 angehoben und in die Führungsbereiche 16 aufgenommen, wobei aufgrund, wobei aufgrund der konisch ausgestalteten Führungsflächen eine Zentrierung der Wafer 20 zu den Aufnahmeschlitzen 15 der Zahnstangen 7, 8 erfolgt, wie in Figur 4 dargestellt ist. Wenn die Wafer so weit angehoben sind, daß die Zahnstangen 7, 8 in einer vorbestimmten Position, beispielsweise unterhalb einer Mittellinie der Wafer 20 liegen, werden sie aufeinander zu bewegt, um die Wafer 20 in die Haltebereiche 17 der Aufnahmeschlitze einzuführen und zu ergreifen, wie es in Figur 3 dargestellt ist. Abschließend wird der Greifer 5 angehoben um die Wafer 20 vollständig aus dem Becken 28 herauszuheben.The unloading of the treatment basin 28 takes place in the opposite way to the loading. First of all, the gripper 5 is moved into the position shown in FIG. 6 above the basin 28, the guide regions 16 of the receiving slots 15 of the toothed racks 7, 8 being aligned with the guide slots in the treatment basin. Then the wafers are over the Lifting element 33 is raised and accommodated in the guide areas 16, the wafers 20 being centered on the receiving slots 15 of the toothed racks 7, 8 because of the conically shaped guide surfaces, as shown in FIG. When the wafers are raised to such an extent that the racks 7, 8 lie in a predetermined position, for example below a center line of the wafers 20, they are moved towards one another in order to insert and grip the wafers 20 in the holding regions 17 of the receiving slots, such as it is shown in Figure 3. Finally, the gripper 5 is raised in order to completely lift the wafer 20 out of the basin 28.
Die Erfindung wurde zuvor anhand eines bevorzugten Ausführungsbeispiels beschrieben, ohne jedoch auf die speziell dargestellte Ausführungsform beschränkt zu sein. Insbesondere kann die Form des Greifers 5 von der darge- stellten Form abweichen. Beispielsweise ist es nicht notwendig, daß die Zahnstangen 7, 8 über die Wellen 13, 14 und die Verbindungsarme 10, 11 verschwenkt werden. Vielmehr ist es auch möglich, die Zahnstangen 7, 8 linear aufeinander zu und voneinander weg zu bewegen. The invention was previously described with reference to a preferred embodiment, but without being limited to the specifically illustrated embodiment. In particular, the shape of the gripper 5 can deviate from the shape shown. For example, it is not necessary for the racks 7, 8 to be pivoted via the shafts 13, 14 and the connecting arms 10, 11. Rather, it is also possible to move the racks 7, 8 linearly towards and away from one another.

Claims

Patentansprücheclaims
1. Verfahren zum Beladen eines Behandlungsbeckens mit scheibenförmi- gen Substraten, insbesondere Halbleiterwafem, mit folgenden Verfahrensschritten:1. Method for loading a treatment basin with disk-shaped substrates, in particular semiconductor wafers, with the following method steps:
- Ergreifen der Substrate mit einem Greifer, der wenigstens zwei gegenüberliegende Greifelemente mit zueinander weisenden Aufnahmeschlitzen aufweist; - Positionieren der Substrate oberhalb des Behandlungsbeckens, derart, daß die Substrate zu Führungsschlitzen innerhalb des Behandlungsbeckens ausgerichtet sind;Gripping the substrates with a gripper which has at least two opposing gripping elements with mutually facing receiving slots; - Positioning the substrates above the treatment basin in such a way that the substrates are aligned with guide slots within the treatment basin;
- Absenken des Greifers zum teilweisen Absenken der Substrate in das Behandlungsbecken, bis die Substrate ein angehobenes Sub- strat-Hubelement im Behandlungsbecken kontaktieren;Lowering the gripper to partially lower the substrates into the treatment basin until the substrates contact a raised substrate lifting element in the treatment basin;
- teilweises auseinander Bewegen der Greifelemente in eine Stellung in der die Substrate nicht mehr gehalten werden jedoch in den Aufnahmeschlitzen geführt sind;- Partially moving the gripping elements into a position in which the substrates are no longer held but are guided in the receiving slots;
- weiteres Absenken der Substrate in das Behandlungsbecken durch Absenken des Hubelements.- Further lowering of the substrates in the treatment basin by lowering the lifting element.
2. Verfahren nach Anspruch 1 , dadurch gekennzeichnet, daß beim weiteren Absenken der Substrate die Greifelemente der Kontur der Substrate folgen.2. The method according to claim 1, characterized in that when the substrates are further lowered, the gripping elements follow the contour of the substrates.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Greifelemente auf eine Oberkante des Beckens oder in eine Position direkt oberhalb der Oberkante abgesenkt werden.3. The method according to claim 1 or 2, characterized in that the gripping elements are lowered onto an upper edge of the basin or into a position directly above the upper edge.
4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Substrate beim Greifen zu den Aufnahmeschlitzen zentriert werden. 4. The method according to any one of claims 1 to 3, characterized in that the substrates are centered when gripping the receiving slots.
. Verfahren zum Entladen von scheibenförmigen Substraten, insbesondere Halbleiterwafem, aus einem Behandlungsbecken mit einem Substrat- Hubelement und Führungsschlitzen im Becken, wobei das Verfahren die folgenden Verfahrensschritte aufweist: - Positionieren eines Greifers, der wenigstens zwei gegenüberliegende, Method for unloading disk-shaped substrates, in particular semiconductor wafers, from a treatment basin with a substrate lifting element and guide slots in the basin, the method comprising the following method steps: - Positioning a gripper that has at least two opposing ones
Greifelemente mit zueinander weisenden Aufnahmeschlitzen aufweist, oberhalb des Behandlungsbeckens, derart, daß die Führungsschlitze im Becken und die Aufnahmeschlitze in den Greifelementen zueinander ausgerichtet sind; - Anheben der Substrate durch das Substrat-Hubelement und Einführen in die Aufnahmeschlitze der Greifelemente; Bewegen der Greifelemente aufeinander zu, um die Substrate zu ergreifen; Herausheben der Substrate aus dem Behandlungsbecken durch An- heben des Greifers.Has gripping elements with mutually facing receiving slots, above the treatment basin, such that the guide slots in the basin and the receiving slots in the gripping elements are aligned with each other; - lifting of the substrates by the substrate lifting element and insertion into the receiving slots of the gripping elements; Moving the gripping elements towards one another to grip the substrates; Lift the substrates out of the treatment tank by lifting the gripper.
6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß die Greifelemente beim Anheben der Substrate durch das Substrat-Hubelement der Kontur der Substrate folgen.6. The method according to claim 5, characterized in that the gripping elements follow the contour of the substrates when lifting the substrates by the substrate lifting element.
7. Verfahren nach Anspruch 5 oder 6, dadurch gekennzeichnet, daß die Greifelemente während des Anhebens der Substrate auf oder kurz oberhalb einer Oberkante des Behandlungsbeckens positioniert werden.7. The method according to claim 5 or 6, characterized in that the gripping elements are positioned on or just above an upper edge of the treatment basin during the lifting of the substrates.
8. Verfahren nach einem der Ansprüche 5 bis 7, dadurch gekennzeichnet, daß der Greifer die Substrate unterhalb ihrer Mittellinie ergreift.8. The method according to any one of claims 5 to 7, characterized in that the gripper grasps the substrates below their center line.
9. Verfahren nach einem der Ansprüche 5 bis 8, dadurch gekennzeichnet, daß die Substrate beim Einführen in die Aufnahmeschlitze zu den Aufnahmeschlitzen zentriert werden. 9. The method according to any one of claims 5 to 8, characterized in that the substrates are centered when inserted into the receiving slots to the receiving slots.
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TW508340B (en) 2002-11-01
US20030108409A1 (en) 2003-06-12
JP2003530282A (en) 2003-10-14
DE10017010A1 (en) 2001-10-18
DE10017010C2 (en) 2002-02-07
WO2001078112A1 (en) 2001-10-18
KR20020087478A (en) 2002-11-22
WO2001078112A8 (en) 2002-12-19

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