EP1282919A1 - Indium-tin-oxide (ito) layer and method for producing the same - Google Patents
Indium-tin-oxide (ito) layer and method for producing the sameInfo
- Publication number
- EP1282919A1 EP1282919A1 EP01933932A EP01933932A EP1282919A1 EP 1282919 A1 EP1282919 A1 EP 1282919A1 EP 01933932 A EP01933932 A EP 01933932A EP 01933932 A EP01933932 A EP 01933932A EP 1282919 A1 EP1282919 A1 EP 1282919A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- ito
- sputtering
- layer
- layers
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000004544 sputter deposition Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000003746 surface roughness Effects 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 239000012495 reaction gas Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000001376 precipitating effect Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 239000002650 laminated plastic Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- ITO Indium tin oxide
- the present invention relates to an indium tin oxide (ITO) layer for nerve use as a transparent, conductive electrode, in particular in organic LED displays, and to a method for the deposition of transparent and conductive indium tin oxide (ITO) layers a substrate.
- ITO indium tin oxide
- ITO layers Indium-tin-oxide layers
- transparent substrate material such as in particular glass, transparent plastics, combined glass / plastic laminates, etc.
- the layers produced by the above methods have a low specific resistance, they have the disadvantage that they have a high surface roughness.
- the surface structure of such ITO layers is characterized by a domain structure with grains of different crystal orientation within the domains, with individual grains having peaks protruding from the surface (so-called spikes).
- the rough surface and the so-called ITO spikes mean that when the ITO layer is used as an electrode they act as field tips and thus reduce the lifespan of organic LED cells, for example, if such ITO layers as electrodes in organic LED Displays are used.
- the increased surface roughness leads to a reduced efficiency of such organic LED cells.
- Another disadvantage can be seen in the fact that the ITO spikes in the manufacture of organic LED displays can lead to the fact that when the organic materials are deposited on the ITO layer, the tips are not covered with the organic material and then used can then lead to short circuits.
- ITO layers and a method for depositing ITO layers in which ITO layers can be produced which have a low surface roughness, preferably below 1 nm, and a low specific resistance, preferably have less than 200 ⁇ cm, the deposition temperature or temperature of the substrate on which the ITO layers are to be deposited should be low, in particular below 250 ° C., preferably below 200 ° C.
- ITO spikes can be avoided.
- the inventive method for the deposition of transparent and conductive indium tin oxide (ITO) layers, in which the layers in particular have a low specific resistance and a very smooth surface comprises a combined high frequency / direct current (HF / DC) sputtering Process in an atmosphere which has an argon-hydrogen mixture as the reaction gas.
- HF / DC direct current
- a reactive gas activation is achieved in the HF plasma for the selected reactive gas mixture argon / hydrogen, which has a positive effect on the properties of the deposited ITO layer.
- the surface roughness and the specific resistance of the layer are significantly reduced, the substrate temperature being able to be kept at a low value of less than 250 ° C., preferably ⁇ 200 ° C. Due to the lower surface roughness, when using such deposited ITO layers for organic LED cells, greater efficiency, greater yield and longer service life can be achieved for organic LED displays.
- the reduction in the specific resistance means that, for certain applications with a fixed sheet resistance for the ITO layer, a smaller necessary layer thickness can be selected, so that a lower material requirement for indium tin oxide is required.
- Known ITO targets are used for sputtering, which preferably comprise 90% In O 3 and 10% SnO 2 .
- the HF power component of the total power during sputtering is preferably set to at least 30%, in particular 60% and more, preferred ranges being in the range from 40 to 90% HF power component, in particular 60 to 80% HF power components.
- the Ar / H mixture added to the process gas according to the invention is preferably in a mixing ratio of 80% argon and 20% hydrogen.
- Such an Ar / H 2 mixture is advantageously added to a process gas usually made of argon in the order of 0.1-30%, in particular 5-15%, but preferably in the range 8-10%.
- the total pressure of the process gas can also play a role in the deposition of the ITO layers. It has been shown here that particularly good results are achieved, in particular in the range of a total pressure of 0.5 to 5 ⁇ bar, preferably 1 to 3 ⁇ bar and most preferably 1.5 to 2 ⁇ bar.
- the substrate temperature is reduced to a max. 250 ° C, but preferably set to ⁇ 200 ° C. This has the advantage that neither the substrate nor the layer itself is damaged by an excessively high temperature.
- the method described is not limited to the use of magnetron sputter systems, it is preferred, however, to use a corresponding magnetron arrangement to undersize the sputter deposition.
- the ITO layers according to the invention which are produced in particular using the method described above, have a smooth surface with a surface roughness of less than 1 nm and have a specific resistance which is below 200 ⁇ cm, in particular in the range from 140 to 160 ⁇ cm.
- FIG. 2 shows the dependence of the specific resistance p on ITO layers, which were deposited with an increasing HF power component. It can also be seen here that the specific resistance decreases with increasing HF power share. A particularly significant reduction is observed up to an RF power component of approx. 30%, while from this point only a small, continuous decrease in the specific resistance can be observed with an increasing RF power component.
- FIG. 3 show AFM images of ITO layers with a magnification of 60,000 times, which can only be obtained by DC sputtering (a), with combined HF / DC sputtering with an HF power share of 33% (b). , with an RF power share of 66% (c) and have been separated using only HF sputtering.
- the AFM images clearly show that a significantly smoother surface structure can be achieved with an increasing HF power component, an optimum in terms of surface roughness being found in particular with an HF power component of 66%.
- an ITO layer was deposited on float glass with the following parameters:
- Total sputtering power 860 W (570 W HF / 290 W DC)
- Magnetic field strength 1200 G.
- Substrate float glass
- an RMS roughness of 0.623 nm was determined using AFM (probe force microscope).
- the RMS roughness root mean square roughness
- the specific resistance of the layer was 152 ⁇ cm.
- the transmission at 550 nm wavelength was 81% compared to the reference air.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing Of Electric Cables (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The invention relates to a method for precipitating transparent and conductive indium-tin-oxide (ITO) layers, which have a particularly low resistance of preferably less than 200 νΦcm and a low degree of surface roughness of preferably less than 1 nm, onto a substrate. To this end, a combined HF/DC sputtering of an indium-tin-oxide (ITO) target is used in which an Ar/H2 mixture serving as a reaction gas is fed to the process gas during sputtering. The invention also relates to (ITO) layers having the aforementioned properties.
Description
Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben Indium tin oxide (ITO) layer and method of manufacturing the same
Die vorliegende Erfindung betrifft eine Indium-Zinn-Oxid (ITO)-Schicht zur Nervvendung als transparente, leitfähige Elektrode, insbesondere bei organischen LED-Displays, sowie ein Verfahren zur Abscheidung von transparenten und leitfälligen Indium-Zinn-Oxid (ITO)- Schichten auf einem Substrat.The present invention relates to an indium tin oxide (ITO) layer for nerve use as a transparent, conductive electrode, in particular in organic LED displays, and to a method for the deposition of transparent and conductive indium tin oxide (ITO) layers a substrate.
Für flache Monitore und Bildschirme, wie sie beispielsweise bei tragbaren Computern oder bei Displays für Mobiltelefone eingesetzt werden, wie z. B. Flüssigkristallanzeigen, organische LED-Displays, TFT-Bildschirme usw. werden transparente und leitfähige Elektroden- Schichten benötigt. Üblicherweise werden dazu Indium-Zinn-Oxid-Schichten (ITO- Schichten) eingesetzt, die hinsichtlich Leitfähigkeit und Transmissions-Eigenschaften die Anforderungen am besten erfüllen. Üblicherweise werden diese ITO-Schichten auf transparentem Substratmaterial, wie insbesondere Glas, transparenten Kunststoffen, kombinierten Glas-/Kιmstoff-Laminaten usw. durch Sputter-Abscheidung (Kathodenzerstäubung) eines ITO-Targets aufgebracht.For flat monitors and screens, such as are used for example in portable computers or in displays for mobile phones, such as. B. liquid crystal displays, organic LED displays, TFT screens, etc. transparent and conductive electrode layers are required. Indium-tin-oxide layers (ITO layers) are usually used for this, which best meet the requirements with regard to conductivity and transmission properties. These ITO layers are usually applied to transparent substrate material, such as in particular glass, transparent plastics, combined glass / plastic laminates, etc., by sputter deposition (sputtering) of an ITO target.
Beispielsweise beschreiben Ishibashi et al. in „Low Resistivity Indium-Tin Oxide Transparent Conductive Films, I. Effect Of Introducing H O Gas or H -Gas During Direct Current Magnetron Sputtering", J Nac. Sei. Technol. A 8(3) Mai/Juni 1990, ein Gleichstrom (DC)- Magnetron-Sputter-Nerfahren, bei dem durch Zugabe von Wasserdampf oder Wasserstoff zum Prozessgas eine ITO-Schicht bei einer Abscheidetemperatur von weniger als 200°C abgeschieden werden kann, die einen spezifischen Widerstand von ca. 6 x 10"4 Ωcm aufweist. Die niedrige Abscheidetemperatur bzw. Substrat-Temperatur von unter 200°C ist in diesem Zusammenhang deshalb wichtig, da bei einer höheren Abscheide- bzw. Substrattemperatur zwar das Sputter-N erfahren einfacher zu den gewünschten Resultaten führt, aber sowohl die abgeschiedene Schicht als auch das Substrat beschädigt werden könnte. Dies ist insbesondere für Substrate, wie z. B. Kunststoffsubstrate, wie z. B. Polyethylentherephtalat (PET) wichtig, die bei höheren Temperaturen zerstört werden würden.For example, Ishibashi et al. in "Low Resistivity Indium-Tin Oxide Transparent Conductive Films, I. Effect Of Introducing HO Gas or H -Gas During Direct Current Magnetron Sputtering", J Nac. Sei. Technol. A 8 (3) May / June 1990, a direct current ( DC) - Magnetron sputter ner driving, in which by adding water vapor or hydrogen to the process gas an ITO layer can be deposited at a deposition temperature of less than 200 ° C, which has a specific resistance of approx. 6 x 10 "4 Ωcm , The low deposition temperature or substrate temperature of below 200 ° C. is important in this context, because at a higher deposition or substrate temperature, the sputtering process leads to the desired results more easily, but both the deposited layer and that Substrate could be damaged. This is particularly for substrates such as. B. plastic substrates such. B. polyethylene terephthalate (PET) important, which would be destroyed at higher temperatures.
Ein weiteres Verfahren zur Abscheidung von ITO-Schichten mit niedrigem Widerstand wird von B. H. Lee et al. in „Effect Of Base Pressure in Sputter Deposition On Characte- ristics of Indium Tin Oxide Thin Film", Fiat panel display Materials II, Sypmposium San Franciso, CA, USA, 8. bis 12. April 1996, Mat.Res. Soc.Symp. Proc.Nol.424, 1997, beschrieben. Bei diesem Verfahren handelt es sich um ein kombiniertes Radiofrequenz (RF)- und DC-Magnetron-SputterV erfahren, bei dem mit gleichen Anteilen an DC-Sputtem und RF-Sputtern ein ITO-Target zerstäubt und eine Schicht mit einem spezifischen Widerstand
von weniger als 1,5x10" Ωcm erzeugt wird. Als Prozessgas wurde hierbei Argon verwendet.Another method for the deposition of ITO layers with low resistance is described by BH Lee et al. in "Effect Of Base Pressure in Sputter Deposition On Characteristics of Indium Tin Oxide Thin Film", Fiat panel display Materials II, Sypmposium San Franciso, CA, USA, April 8-12, 1996, Mat.Res. Soc.Symp Proc.Nol.424, 1997. This method is a combined radio frequency (RF) and DC magnetron sputtering method in which an ITO target is used with the same proportions of DC sputterers and RF sputterers atomized and a layer with a specific resistance of less than 1.5x10 " Ωcm. Argon was used as the process gas.
Obwohl die Schichten, die mit den obigen Verfahren erzeugt wurden, einen niedrigen spezifischen Widerstand aufweisen, besitzen sie jedoch den Nachteil, dass sie eine hohe Oberfiä- chenrauhigkeit aufweisen. Insbesondere ist die Oberflächenstruktur derartiger ITO- Schichten durch eine Domänenstruktur mit Körnern unterschiedlicher Kristallorientierung innerhalb der Domänen gekennzeichnet, wobei einzelne Körner aus der Oberfläche herausragende Spitzen aufweisen (sog. Spikes). Die rauhe Oberfläche und die sog. ITO-Spikes führen dazu, dass sie bei der Verwendung der ITO-Schicht als Elektrode als Feldspitzen wirken und somit die Lebensdauer beispielsweise von organischen LED-Zellen herabsetzen, wenn derartige ITO-Schichten als Elektroden bei organischen LED-Displays verwendet werden. Ausserdem führt die erhöhte Oberflächenrauhigkeit zu einer verminderten Effizienz von derartigen organischen LED-Zellen. Ein weiterer Nachteil ist darin zu sehen, dass die ITO-Spikes bei der Herstellung von organischen LED-Displays dazu führen können, dass bei der Abscheidung der organischen Materialien auf der ITO-Schicht die Spitzen nicht mit dem organischen Material bedeckt werden und anschliessend im Einsatz dann zu Kurzschlüssen führen können.However, although the layers produced by the above methods have a low specific resistance, they have the disadvantage that they have a high surface roughness. In particular, the surface structure of such ITO layers is characterized by a domain structure with grains of different crystal orientation within the domains, with individual grains having peaks protruding from the surface (so-called spikes). The rough surface and the so-called ITO spikes mean that when the ITO layer is used as an electrode they act as field tips and thus reduce the lifespan of organic LED cells, for example, if such ITO layers as electrodes in organic LED Displays are used. In addition, the increased surface roughness leads to a reduced efficiency of such organic LED cells. Another disadvantage can be seen in the fact that the ITO spikes in the manufacture of organic LED displays can lead to the fact that when the organic materials are deposited on the ITO layer, the tips are not covered with the organic material and then used can then lead to short circuits.
Aufgabe der vorliegenden Erfindung ist es deshalb, ITO-Schichten und ein Verfahren zur Abscheidung von ITO-Schichten bereitzustellen, bei dem ITO-Schichten erzeugt werden können, die eine geringe Oberflächenrauhigkeit, von vorzugsweise unter 1 nm, und einen geringen spezifischen Widerstand, von vorzugsweise weniger als 200 μΩcm, aufweisen, wobei die Abscheidetemperatur bzw. Temperatur des Substrats, auf dem die ITO-Schichten abgeschieden werden sollen, niedrig sein soll, insbesondere unter 250°C, vorzugsweise unter 200°C, liegen soll. Insbesondere sollen bei einem industriell einsetzbaren Verfahren bzw. entsprechenden ITO-Schichten, d. h., unter Berücksichtigung einer einfachen und kostengünstigen Realisation, insbesondere die sog. ITO-Spikes vermieden werden.It is therefore an object of the present invention to provide ITO layers and a method for depositing ITO layers, in which ITO layers can be produced which have a low surface roughness, preferably below 1 nm, and a low specific resistance, preferably have less than 200 μΩcm, the deposition temperature or temperature of the substrate on which the ITO layers are to be deposited should be low, in particular below 250 ° C., preferably below 200 ° C. In particular, in the case of an industrially usable process or corresponding ITO layers, i. i.e., taking into account a simple and inexpensive implementation, in particular the so-called ITO spikes can be avoided.
Diese Aufgabe wird gelöst mit dem Verfahren nach Anspruch 1, sowie der ITO-Schicht nach Anspruch 7. Vorteilhafte Ausgestaltungen sind Gegenstand der Unteransprüche.This object is achieved with the method according to claim 1 and the ITO layer according to claim 7. Advantageous refinements are the subject of the subclaims.
Das erfindungsgemässe Verfahren zur Abscheidung von transparenten und leitfähigen Indium-Zinn-Oxid (ITO)-Schichten, bei denen die Schichten insbesondere einen niedrigen spezifischen Widerstand und eine sehr glatte Oberfläche aufweisen, umfasst ein kombiniertes Hochfrequenz/Gleichstrom (HF/DC)-Sputter- Verfahren in einer Atmosphäre, die als Reaktionsgas ein ArgonWasserstoff-Gemisch aufweist. Durch die Verwendung eines HF-
Leistungsanteils im für den Fachmann bekannten Hochfrequenzbereich beim Sputtern wird für das gewählte Reaktivgas-Gemisch Argon/Wasserstoff eine Reaktivgas-Aktivierung im HF-Plasma erzielt, die sich positiv auf die Eigenschaften der abgeschiedenen ITO-Schicht auswirkt. Insbesondere wird die Oberflächenrauhigkeit und der spezifische Widerstand der Schicht deutlich verringert, wobei die Substrat-Temperatur auf einem niedrigen Wert von weniger als 250°C, vorzugsweise ≤ 200°C gehalten werden kann. Durch die geringere O- berflächenrauhigkeit kann bei Verwendung derartig abgeschiedener ITO-Schichten für organische LED-Zellen eine grössere Effizienz, grössere Ausbeute und höhere Lebensdauer für organische LED-Displays erzielt werden. Ausserdem führt die Verringerung des spezifischen Widerstands dazu, dass für bestimmte Anwendungen bei einem festgesetzten Flächenwiderstand für die ITO-Schicht eine geringere notwendige Schicht-Dicke gewählt werden kann, so dass ein geringerer Materialbedarf an Indium-Zinn-Oxid erforderlich wird.The inventive method for the deposition of transparent and conductive indium tin oxide (ITO) layers, in which the layers in particular have a low specific resistance and a very smooth surface, comprises a combined high frequency / direct current (HF / DC) sputtering Process in an atmosphere which has an argon-hydrogen mixture as the reaction gas. By using an RF As part of the power in the high-frequency range for sputtering known to the person skilled in the art, a reactive gas activation is achieved in the HF plasma for the selected reactive gas mixture argon / hydrogen, which has a positive effect on the properties of the deposited ITO layer. In particular, the surface roughness and the specific resistance of the layer are significantly reduced, the substrate temperature being able to be kept at a low value of less than 250 ° C., preferably ≤ 200 ° C. Due to the lower surface roughness, when using such deposited ITO layers for organic LED cells, greater efficiency, greater yield and longer service life can be achieved for organic LED displays. In addition, the reduction in the specific resistance means that, for certain applications with a fixed sheet resistance for the ITO layer, a smaller necessary layer thickness can be selected, so that a lower material requirement for indium tin oxide is required.
Zum Sputtern werden üblicherweise bekannte ITO-Targets verwendet, die vorzugsweise 90 % In O3 und 10 % SnO2 umfassen. Der HF-Leistungsanteil an der Gesamtleistung beim Sputtern, wird vorzugsweise auf mindestens 30%, insbesondere 60 % und mehr eingestellt, wobei bevorzugte Bereiche im Bereich von 40 bis 90 % HF-Leistungsanteil, insbesondere 60 bis 80 % HF-Leistungsanteile liegen.Known ITO targets are used for sputtering, which preferably comprise 90% In O 3 and 10% SnO 2 . The HF power component of the total power during sputtering is preferably set to at least 30%, in particular 60% and more, preferred ranges being in the range from 40 to 90% HF power component, in particular 60 to 80% HF power components.
Das erfmdungsgemäss dem Prozessgas zugegebene Ar/H -Gemisch liegt vorzugsweise im Mischungsverhältnis von 80 % Argon und 20 % Wasserstoff vor. In vorteilhafter Weise wird ein derartiges Ar/H2-Gemisch einem üblicherweise aus Argon bestehenden Prozessgas in der Grössenordnung von 0,1 - 30 %, insbesondere 5 - 15 %, bevorzugt jedoch im Bereich von 8 - 10 % zugegeben.The Ar / H mixture added to the process gas according to the invention is preferably in a mixing ratio of 80% argon and 20% hydrogen. Such an Ar / H 2 mixture is advantageously added to a process gas usually made of argon in the order of 0.1-30%, in particular 5-15%, but preferably in the range 8-10%.
Für die Abscheidung der ITO-Schichten kann weiterhin auch der Gesamtdruck des Prozessgases eine Rolle spielen. Hier hat sich gezeigt, dass insbesondere im Bereich eines Gesamtdrucks von 0,5 bis 5 μbar, vorzugsweis 1 bis 3 μbar und höchstvorzugsweise von 1 ,5 bis 2 μbar besonders gute Ergebnisse erzielt werden.The total pressure of the process gas can also play a role in the deposition of the ITO layers. It has been shown here that particularly good results are achieved, in particular in the range of a total pressure of 0.5 to 5 μbar, preferably 1 to 3 μbar and most preferably 1.5 to 2 μbar.
Bei einer bevorzugten Ausföhrungsform, die insbesondere bei der Abscheidung von ITO- Schichten auf Kunststoffen gewählt wird, wird die Substrat-Temperatur bei der Abscheidung der ITO-Schicht auf max. 250° C, vorzugsweise jedoch ≤ 200°C gesetzt. Dies hat den Vorteil, dass weder das Substrat, noch die Schicht selbst durch eine zu hohe Temperatur beschädigt werden.
Obgleich das beschriebene Verfahren nicht auf die Anwendung von Magnetron-Sputter- Anlagen beschränkt ist, ist es jedoch bevorzugt, die Sputter- Abscheidung durch eine entsprechende Magnetron- Anordnung zu Untersätzen.In a preferred embodiment, which is chosen in particular when depositing ITO layers on plastics, the substrate temperature is reduced to a max. 250 ° C, but preferably set to ≤ 200 ° C. This has the advantage that neither the substrate nor the layer itself is damaged by an excessively high temperature. Although the method described is not limited to the use of magnetron sputter systems, it is preferred, however, to use a corresponding magnetron arrangement to undersize the sputter deposition.
Die erfindungsgemässen ITO-Schichten, die insbesondere mit dem oben beschriebenen Verfahren hergestellt werden, weisen eine glatte Oberfläche mit einer Oberfiächenrauhigkeit von weniger als 1 nm auf und besitzen einen spezifischen Widerstand, der unter 200 μΩcm liegt, und zwar insbesondere im Bereich von 140 bis 160 μΩcm.The ITO layers according to the invention, which are produced in particular using the method described above, have a smooth surface with a surface roughness of less than 1 nm and have a specific resistance which is below 200 μΩcm, in particular in the range from 140 to 160 μΩcm.
Weitere Vorteile, Kennzeichen und Merkmale der Erfindung werden anhand der nachfolgenden detaillierten Beschreibung bevorzugter Ausführungsbeispiele deutlich. Dabei zeigen die Diagramme inFurther advantages, characteristics and features of the invention will become apparent from the following detailed description of preferred exemplary embodiments. The diagrams show in
Fig.l die Abhängigkeit der Oberfiächenrauhigkeit (RMS -Rauhigkeit) von ITO-Fig.l the dependence of the surface roughness (RMS roughness) of ITO
Schichten vom HF-Leistungsanteil bei der Abscheidung mit einer Leistungsdichte von P = 2 W/cm2 und einer Substrat-Temperatur von Tsub = 200° C;Layers of the RF power component during the deposition with a power density of P = 2 W / cm 2 and a substrate temperature of T sub = 200 ° C;
Fig.2 die Abhängigkeit des spezifischen Widerstands p von ITO-Schichten vom HF-2 shows the dependence of the specific resistance p of ITO layers on the HF
Leistungsanteil bei der Abscheidung mit einer Leistungsdichte von P = 2 W/cm2 und einer Substrat-Temperatur von TSUb = 200° C; und inPower share in the deposition with a power density of P = 2 W / cm 2 and a substrate temperature of T SUb = 200 ° C; and in
Fig. 3 rasterkraftmikroskopische (AFM)-Aufhahmen in 60.000-facher Vergrößerung von ITO-Schichten, die mit verschiedenem HF-Leistungsanteil bei einer Substrat-Temperatur von TSUb = 200°C abgeschieden wurden. ausschließlich DC-Sputtern,Fig. 3 atomic force microscopic (AFM) recordings in 60,000 times magnification of ITO layers, which were deposited with different HF power components at a substrate temperature of T SUb = 200 ° C. only DC sputtering,
33 % HF-Leistungsanteil beim HF/DC-Sputtern33% HF power share in HF / DC sputtering
66 % HF Leistungsanteil, ausschließlich HF-Sputtern.66% HF power share, only HF sputtering.
Fig. 1 zeigt die Abhängigkeit der Oberflächen-Rauhigkeit vom HF-Leistungsanteil bei der erfindungsgemässen Abscheidung von ITO-Schichten. Mit zunehmendem HF- Leistungsanteil beim kombinierten HF/DC-Sputtern wird eine zunehmend glattere Oberfläche erzielt. Insbesondere ab einem HF-Leistungsanteil von ca. 30 % und mehr wird eine signifikante Reduzierung der Oberfiächenrauhigkeit beobachtet. Ab einem HF- Leistungsanteil von ca. 65 % tritt eine Sättigung bezüglich des Einflusses auf die Oberfiächenrauhigkeit ein.1 shows the dependence of the surface roughness on the HF power component in the inventive deposition of ITO layers. With increasing HF power share in the combined HF / DC sputtering, an increasingly smoother surface is achieved. A significant reduction in surface roughness is observed in particular from an HF power component of approx. 30% and more. From an HF power component of approx. 65%, there is a saturation with regard to the influence on the surface roughness.
Fig. 2 zeigt die Abhängigkeit des spezifischen Widerstands p von ITO-Schichten, die mit einem zunehmenden HF-Leistungsanteil abgeschieden wurden. Auch hier ist zu erkennen,
dass mit zunehmendem HF-Leistungsanteil der spezifische Widerstand abnimmt. Eine besonders deutliche Reduzierung wird bis zu einem HF-Leistungsanteil von ca. 30 % beobachtet, während ab diesem Punkt mit zunehmendem HF-Leistungsanteil nur noch eine geringe kontinuierliche Abnahme des spezifischen Widerstands zu beobachten ist.FIG. 2 shows the dependence of the specific resistance p on ITO layers, which were deposited with an increasing HF power component. It can also be seen here that the specific resistance decreases with increasing HF power share. A particularly significant reduction is observed up to an RF power component of approx. 30%, while from this point only a small, continuous decrease in the specific resistance can be observed with an increasing RF power component.
Fig. 3 zeigt den Einfluss des HF-Leistungsanteils beim kombinierten HF/DC-Sputtem auf Oberflächen von ITO-Schichten, die bei einer Substrat-Temperatur von 200°C abgeschieden werden.3 shows the influence of the HF power component in the combined HF / DC sputtering on surfaces of ITO layers which are deposited at a substrate temperature of 200 ° C.
Die in Fig. 3 dargestellten Abbildungen zeigen AFM-Aufnahmen von ITO-Schichten mit einer 60.000-fachen Vergrösserung, die ausschließlich durch DC-Sputtern (a), mit kombiniertem HF/DC-Sputtern mit einem HF-Leistungsanteil von 33 % (b), mit einem HF- Leistungsanteil von 66 % (c) und durch ausschließliches HF-Sputtern abgeschieden worden sind. Die AFM-Aufnahmen zeigen deutlich, dass mit zunehmendem HF-Leistungsanteil eine deutlich glattere Oberflächenstruktur erzielt werden kann, wobei insbesondere bei einem HF-Leistungsanteil von 66 % ein Optimum bezüglich der Oberfiächenrauhigkeit festzustellen ist.The illustrations shown in FIG. 3 show AFM images of ITO layers with a magnification of 60,000 times, which can only be obtained by DC sputtering (a), with combined HF / DC sputtering with an HF power share of 33% (b). , with an RF power share of 66% (c) and have been separated using only HF sputtering. The AFM images clearly show that a significantly smoother surface structure can be achieved with an increasing HF power component, an optimum in terms of surface roughness being found in particular with an HF power component of 66%.
Erfmdungsgemäss wurde bei einem bevorzugten Ausführungsbeispiel eine ITO-Schicht auf Floatglas mit den folgenden Parametern abgeschieden:According to the invention, in a preferred exemplary embodiment, an ITO layer was deposited on float glass with the following parameters:
Target: ITO-Mitsui (90 % In203/10% SnO2)Target: ITO Mitsui (90% In 2 0 3 /10% SnO 2 )
Reinheit: 4N, Dichte > 98%Purity: 4N, density> 98%
Gesamt-Sputter-Leistung: 860 W (570 W HF/290 W DC)Total sputtering power: 860 W (570 W HF / 290 W DC)
HF-Leistungsanteil: 66 %HF power share: 66%
Prozessdruck: 1,5 μbar, Ar/H2-Anteil (80 %/20%-Gemisch): 8 %Process pressure: 1.5 μbar, Ar / H 2 content (80% / 20% mixture): 8%
Depositionstemperatur: 200°CDeposition temperature: 200 ° C
Magnetfeldstärke: 1200 GMagnetic field strength: 1200 G.
Substrat: FloatglasSubstrate: float glass
Schichtdicke: 72 nmLayer thickness: 72 nm
Bei einer ITO-Schicht, die mit den obigen Prozessparametern durch Magnetron-Sputtem abgeschieden worden ist, wurde mittels AFM (T asterkraftmikroskop) eine RMS-Rauhigkeit von 0.623 nm bestimmt. Die RMS-Rauhigkeit (root mean Square roughness) ist definiert als die Standardabweichung der Z- Werte (Höhenweite), die bei der Messung mit dem Rasterkraftmikroskop ermittelt wurden. Der spezifische Widerstand der Schicht betrug 152 μΩcm. Die Transmission bei 550 nm Wellenlänge betrug gegenüber der Referenz Luft 81 %.
Diese Ergebnisse zeigen, dass mit dem oben beschriebenen Verfahren erfindungsgemässe Schichten hergestellt werden können, die insbesondere bezüglich Oberfiächenrauhigkeit und spezifischem Widerstand hervorragende Eigenschaften zur Verwendung in organischen LED-Displays aufweisen.
In the case of an ITO layer which was deposited by magnetron sputtering using the above process parameters, an RMS roughness of 0.623 nm was determined using AFM (probe force microscope). The RMS roughness (root mean square roughness) is defined as the standard deviation of the Z values (height range), which were determined during the measurement with the atomic force microscope. The specific resistance of the layer was 152 μΩcm. The transmission at 550 nm wavelength was 81% compared to the reference air. These results show that the method described above can be used to produce layers according to the invention which, in particular with regard to surface roughness and specific resistance, have excellent properties for use in organic LED displays.
Claims
1. Verfahren zur Abscheidung von transparenten und leitfähigen Indium-Zinn-Oxid (ITO)-Schichten mit insbesondere niedrigem Widerstand von vorzugsweise unter 200 μΩcm und geringer Oberfiächenrauhigkeit von vorzugsweise weniger als 1 nm auf einem Substrat, gekennzeichnet durch kombiniertes HF/DC-Sputtern eines Indium- Zinn-Oxid (ITO)-Targets, wobei dem Prozessgas beim Sputtern ein Ar/ΕL-Gemisch als Reaktionsgas zugegeben wird.1. A method for the deposition of transparent and conductive indium tin oxide (ITO) layers with in particular a low resistance of preferably below 200 μΩcm and a low surface roughness of preferably less than 1 nm on a substrate, characterized by combined HF / DC sputtering Indium-tin-oxide (ITO) targets, whereby an Ar / ΕL mixture is added as the reaction gas to the process gas during sputtering.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass der HF-Leistungsanteil an der Gesamtleistung beim Sputtern mindestens 30 %, vorzugsweise 60 % und mehr, insbesondere 40 % bis 90 %, bevorzugt 60 bis 80 %, beträgt.2. The method according to claim 1, characterized in that the HF power share of the total power during sputtering is at least 30%, preferably 60% and more, in particular 40% to 90%, preferably 60 to 80%.
3. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Mischungsverhältnis des Ar/H2-Gemisches 80:20 beträgt und der Anteil des Ar/H2-Gemisches am Prozessgas 0,1 bis 30 %, insbesondere 5 bis 15 %, vorzugsweise 8 bis 10 % beträgt.3. The method according to any one of the preceding claims, characterized in that the mixing ratio of the Ar / H 2 mixture is 80:20 and the proportion of the Ar / H 2 mixture in the process gas 0.1 to 30%, in particular 5 to 15% , preferably 8 to 10%.
4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass der Druck des Prozessgases beim Sputtern 0,5 bis 5 μbar, vorzugsweise 1 bis 3 μbar, insbesondere 1,5 bis 3 μbar, beträgt.4. The method according to any one of the preceding claims, characterized in that the pressure of the process gas during sputtering is 0.5 to 5 μbar, preferably 1 to 3 μbar, in particular 1.5 to 3 μbar.
5. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass zum Sputtern Magnetron-Sputtem eingesetzt wird.5. The method according to any one of the preceding claims, characterized in that magnetron sputtering is used for sputtering.
6. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeiclinet, dass die Substrat-Temperatur bei der Abscheidung der ITO-Schicht 250° C, vorzugsweise 200°C, nicht übersteigt.6. The method according to any one of the preceding claims, characterized gekennzeiclinet that the substrate temperature during the deposition of the ITO layer does not exceed 250 ° C, preferably 200 ° C.
7. Indium-Zinn-Oxid (ITO)-Schicht zur Verwendung als transparente, leitfähige Elektrode, insbesondere bei organischen LED-Displays, auf einem Substrat, insbesondere hergestellt nach dem Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schicht einen spezifischen Widerstand von weniger als 200 μΩcm und eine Oberfiächenrauhigkeit von unter 1 nm aufweist.7. indium tin oxide (ITO) layer for use as a transparent, conductive electrode, in particular in organic LED displays, on a substrate, in particular produced by the method according to any one of the preceding claims, characterized in that the layer has a specific Resistance of less than 200 μΩcm and a surface roughness of less than 1 nm.
8. ITO-Schicht nach Anspruch 7, dadurch gekennzeichnet, dass der spezifische Widerstand 120 bis 180 μΩcm beträgt. 8. ITO layer according to claim 7, characterized in that the specific resistance is 120 to 180 μΩcm.
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DE10023459 | 2000-05-12 | ||
PCT/EP2001/005060 WO2001086731A1 (en) | 2000-05-12 | 2001-05-04 | Indium-tin-oxide (ito) layer and method for producing the same |
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- 2000-05-12 DE DE10023459A patent/DE10023459A1/en not_active Withdrawn
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- 2001-05-04 JP JP2001582848A patent/JP5144868B2/en not_active Expired - Lifetime
- 2001-05-04 WO PCT/EP2001/005060 patent/WO2001086731A1/en active Application Filing
- 2001-05-04 KR KR1020027015177A patent/KR100821353B1/en active IP Right Grant
- 2001-05-04 US US10/276,202 patent/US6849165B2/en not_active Expired - Lifetime
- 2001-05-04 EP EP01933932A patent/EP1282919A1/en not_active Withdrawn
- 2001-05-14 TW TW090111425A patent/TWI253477B/en not_active IP Right Cessation
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JP5144868B2 (en) | 2013-02-13 |
WO2001086731A1 (en) | 2001-11-15 |
KR100821353B1 (en) | 2008-04-10 |
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