EP1223669A3 - Modulateur d'amplitude et procédé - Google Patents

Modulateur d'amplitude et procédé Download PDF

Info

Publication number
EP1223669A3
EP1223669A3 EP01121703A EP01121703A EP1223669A3 EP 1223669 A3 EP1223669 A3 EP 1223669A3 EP 01121703 A EP01121703 A EP 01121703A EP 01121703 A EP01121703 A EP 01121703A EP 1223669 A3 EP1223669 A3 EP 1223669A3
Authority
EP
European Patent Office
Prior art keywords
pulse
capacitive element
circuit
diode switch
carrier signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01121703A
Other languages
German (de)
English (en)
Other versions
EP1223669B1 (fr
EP1223669A2 (fr
Inventor
Frank Künzler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valeo Schalter und Sensoren GmbH
Original Assignee
Valeo Schalter und Sensoren GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo Schalter und Sensoren GmbH filed Critical Valeo Schalter und Sensoren GmbH
Publication of EP1223669A2 publication Critical patent/EP1223669A2/fr
Publication of EP1223669A3 publication Critical patent/EP1223669A3/fr
Application granted granted Critical
Publication of EP1223669B1 publication Critical patent/EP1223669B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/08—Amplitude modulation by means of variable impedance element
    • H03C1/14—Amplitude modulation by means of variable impedance element the element being a diode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/02—Amplitude-modulated carrier systems, e.g. using on-off keying; Single sideband or vestigial sideband modulation
    • H04L27/04—Modulator circuits; Transmitter circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Amplitude Modulation (AREA)
EP01121703A 2000-11-30 2001-09-17 Modulateur d'amplitude et procédé Expired - Lifetime EP1223669B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10059585A DE10059585A1 (de) 2000-11-30 2000-11-30 Elektrische Schaltung und Verfahren zur Pulsmodulation eines Trägersignals
DE10059585 2000-11-30

Publications (3)

Publication Number Publication Date
EP1223669A2 EP1223669A2 (fr) 2002-07-17
EP1223669A3 true EP1223669A3 (fr) 2003-09-24
EP1223669B1 EP1223669B1 (fr) 2006-10-04

Family

ID=7665316

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01121703A Expired - Lifetime EP1223669B1 (fr) 2000-11-30 2001-09-17 Modulateur d'amplitude et procédé

Country Status (3)

Country Link
US (1) US6583678B2 (fr)
EP (1) EP1223669B1 (fr)
DE (2) DE10059585A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438434B1 (ko) * 2002-06-18 2004-07-03 삼성전자주식회사 제어부와 종속부를 가지는 전자기기에서의 전원 및 신호제어 장치
EP1691481B1 (fr) * 2005-02-12 2014-04-02 TRUMPF Hüttinger GmbH + Co. KG Modulateur en amplitude
JP4244988B2 (ja) * 2005-12-02 2009-03-25 Ｔｄｋ株式会社 磁気抵抗効果素子、該素子を備えた薄膜磁気ヘッド及びその製造方法
RU2467472C1 (ru) * 2011-05-11 2012-11-20 Государственное образовательное учреждение высшего профессионального образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) Ограничитель амплитуды высоковольтных однополярных импульсов
DE102018103518B3 (de) 2018-02-16 2019-07-11 Forschungsverbund Berlin E.V. Schaltung, System zur Entfernungsbestimmung und ein Fahrzeug
CN110460395B (zh) * 2019-09-02 2024-04-19 深圳市强军科技有限公司 射频脉冲调制电路及装置
WO2022060242A1 (fr) * 2020-09-21 2022-03-24 Никита Александрович ПАРШУТО Générateur d'impulsions pour pulsomètre de contact

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2133527A1 (fr) * 1971-04-16 1972-12-01 Lignes Telegraph Telephon
US4107630A (en) * 1976-10-27 1978-08-15 Siemens Aktiengesellschaft Pulse-modulated high-frequency transmitter
JPH04167645A (ja) * 1990-10-26 1992-06-15 Matsushita Electric Works Ltd Ａｓｋ変調器
US5697076A (en) * 1995-05-01 1997-12-09 Illinois Institute Of Technology Suspended carrier modulation of high-Q transmitters

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2325191B2 (de) * 1973-05-18 1980-04-17 Te Ka De Felten & Guilleaume Fernmeldeanlagen Gmbh, 8500 Nuernberg Schaltungsanordnung zum Umsetzen von Gleichstromimpulsen in bandbegrenzte Wechselstromsignale
US4999636A (en) * 1989-02-17 1991-03-12 Amtech Technology Corporation Range limiting system
DE3927539A1 (de) * 1989-08-21 1991-03-07 Conrad Siegfried Selektives schalten mit impulsen unterschiedlicher breite
US5379321A (en) * 1993-02-01 1995-01-03 Xerox Corporation High speed PWM without linearity compromise at extreme duty cycles
JP3189631B2 (ja) * 1995-07-10 2001-07-16 株式会社村田製作所 ミキサ
JP3473492B2 (ja) * 1999-04-28 2003-12-02 株式会社村田製作所 Ａｓｋ変調器およびそれを用いた通信装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2133527A1 (fr) * 1971-04-16 1972-12-01 Lignes Telegraph Telephon
US4107630A (en) * 1976-10-27 1978-08-15 Siemens Aktiengesellschaft Pulse-modulated high-frequency transmitter
JPH04167645A (ja) * 1990-10-26 1992-06-15 Matsushita Electric Works Ltd Ａｓｋ変調器
US5697076A (en) * 1995-05-01 1997-12-09 Illinois Institute Of Technology Suspended carrier modulation of high-Q transmitters

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ALEKSEEV E ET AL: "InGaAs PIN diodes for high-isolation W-band monolithic integrated switching applications", HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, 1997. PROCEEDIINGS., 1997 IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN ITHACA, NY, USA 4-6 AUG. 1997, NEW YORK, NY, USA,IEEE, US, 4 August 1997 (1997-08-04), pages 332 - 340, XP010264385, ISBN: 0-7803-3970-3 *
KOBAYASHI K W ET AL: "MONOLITHIC GAAS HBT P-I-N DIODE VARIABLE GAIN AMPLIFIERS, ATTENUATORS, AND SWITCHES", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE INC. NEW YORK, US, vol. 41, no. 12, 1 December 1993 (1993-12-01), pages 2295 - 2302, XP000426147, ISSN: 0018-9480 *
MANSOUR R R ET AL: "Analysis of microstrip T-junction and its application to the design of transfer switches", MICROWAVE SYMPOSIUM DIGEST, 1992., IEEE MTT-S INTERNATIONAL ALBUQUERQUE, NM, USA 1-5 JUNE 1992, NEW YORK, NY, USA,IEEE, US, 1 June 1992 (1992-06-01), pages 889 - 892, XP010063048, ISBN: 0-7803-0611-2 *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 469 (E - 1271) 29 September 1992 (1992-09-29) *

Also Published As

Publication number Publication date
DE50111143D1 (de) 2006-11-16
EP1223669B1 (fr) 2006-10-04
US20020063609A1 (en) 2002-05-30
EP1223669A2 (fr) 2002-07-17
US6583678B2 (en) 2003-06-24
DE10059585A1 (de) 2002-06-06

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