EP1215309A4 - Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer - Google Patents

Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer

Info

Publication number
EP1215309A4
EP1215309A4 EP00955019A EP00955019A EP1215309A4 EP 1215309 A4 EP1215309 A4 EP 1215309A4 EP 00955019 A EP00955019 A EP 00955019A EP 00955019 A EP00955019 A EP 00955019A EP 1215309 A4 EP1215309 A4 EP 1215309A4
Authority
EP
European Patent Office
Prior art keywords
silicon wafer
evaluation
manufacture
wafer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00955019A
Other languages
German (de)
French (fr)
Other versions
EP1215309A1 (en
EP1215309B1 (en
EP1215309B8 (en
Inventor
Satoshi Komiya
Shiro Yoshino
Masayoshi Danbata
Kouichirou Hayashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Publication of EP1215309A1 publication Critical patent/EP1215309A1/en
Publication of EP1215309A4 publication Critical patent/EP1215309A4/en
Publication of EP1215309B1 publication Critical patent/EP1215309B1/en
Application granted granted Critical
Publication of EP1215309B8 publication Critical patent/EP1215309B8/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
EP00955019A 1999-08-27 2000-08-25 Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer Expired - Lifetime EP1215309B8 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24118699 1999-08-27
JP24118699 1999-08-27
PCT/JP2000/005738 WO2001016409A1 (en) 1999-08-27 2000-08-25 Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer

Publications (4)

Publication Number Publication Date
EP1215309A1 EP1215309A1 (en) 2002-06-19
EP1215309A4 true EP1215309A4 (en) 2003-05-02
EP1215309B1 EP1215309B1 (en) 2010-01-06
EP1215309B8 EP1215309B8 (en) 2010-05-19

Family

ID=17070515

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00955019A Expired - Lifetime EP1215309B8 (en) 1999-08-27 2000-08-25 Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer

Country Status (5)

Country Link
US (1) US6800132B1 (en)
EP (1) EP1215309B8 (en)
KR (2) KR100720659B1 (en)
DE (1) DE60043661D1 (en)
WO (1) WO2001016409A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4549589B2 (en) * 2001-09-14 2010-09-22 シルトロニック・ジャパン株式会社 Silicon semiconductor substrate and manufacturing method thereof
KR20030043387A (en) * 2001-11-28 2003-06-02 주식회사 실트론 Manufacturing method of single crystal silicon wafer
JP4257080B2 (en) * 2002-07-30 2009-04-22 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Defect detection method for silicon wafer
JP2006315869A (en) * 2005-05-10 2006-11-24 Sumco Corp Method for manufacturing nitrogen-doped silicon single crystal
JP4693188B2 (en) * 2008-07-11 2011-06-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Silicon wafer etching method
JP5346744B2 (en) * 2008-12-26 2013-11-20 ジルトロニック アクチエンゲゼルシャフト Silicon wafer and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0942078A1 (en) * 1998-03-09 1999-09-15 Shin-Etsu Handotai Company Limited Method for producing silicon single crystal wafer and silicon single crystal wafer
EP0962556A1 (en) * 1998-06-04 1999-12-08 Shin-Etsu Handotai Company Limited Nitrogen doped single crystal silicon wafer with few defects and method for its production

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61193456A (en) 1985-02-21 1986-08-27 Toshiba Corp Manufacture of semiconductor element
JP3080338B2 (en) * 1992-06-22 2000-08-28 株式会社コプロス Pit excavator with variable machine width
DE19637182A1 (en) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Process for the production of silicon wafers with low defect density
JP4041182B2 (en) 1997-01-27 2008-01-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Silicon wafer for heat treatment and manufacturing method thereof
JP3346249B2 (en) 1997-10-30 2002-11-18 信越半導体株式会社 Heat treatment method for silicon wafer and silicon wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0942078A1 (en) * 1998-03-09 1999-09-15 Shin-Etsu Handotai Company Limited Method for producing silicon single crystal wafer and silicon single crystal wafer
EP0962556A1 (en) * 1998-06-04 1999-12-08 Shin-Etsu Handotai Company Limited Nitrogen doped single crystal silicon wafer with few defects and method for its production

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHEN Y Y ET AL: "PERFORMANCE AND RELIABILITY ASSESSMENT OF DUAL-GATE CMOS DEVICES WITH GATE OXIDE GROWN ON NITROGEN IMPLANTED SI SUBSTRATES", INTERNATIONAL ELECTRON DEVICES MEETING 1997. IEDM TECHNICAL DIGEST. WASHINGTON, DC, DEC. 7 - 10, 1997, NEW YORK, NY: IEEE, US, 7 December 1997 (1997-12-07), pages 639 - 642, XP000855877, ISBN: 0-7803-4101-5 *
CISZEK T F ET AL: "EFFECT OF NITROGEN DOPING ON MICRODEFECTS AND MINORITY CHARGE CARRIER LIFETIME OF HIGH-PURITY, DISLOCATION-FREE AND MULTICRYSTALLINE SILICON", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 41/42, 1 June 1996 (1996-06-01), pages 61 - 70, XP000614222, ISSN: 0927-0248 *
See also references of WO0116409A1 *
SHIMURA ET AL: "Nitrogen effect on oxygen precipitation in Czochralski silicon", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 48, no. 3, January 1986 (1986-01-01), pages 224 - 226, XP002105443, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
US6800132B1 (en) 2004-10-05
EP1215309A1 (en) 2002-06-19
EP1215309B1 (en) 2010-01-06
KR20020026575A (en) 2002-04-10
WO2001016409A1 (en) 2001-03-08
DE60043661D1 (en) 2010-02-25
KR100720659B1 (en) 2007-05-21
KR20070036804A (en) 2007-04-03
EP1215309B8 (en) 2010-05-19

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