EP1204860A1 - Systeme d'examen de plaquettes a angle d'incidence variable de l'eclairage - Google Patents

Systeme d'examen de plaquettes a angle d'incidence variable de l'eclairage

Info

Publication number
EP1204860A1
EP1204860A1 EP00957477A EP00957477A EP1204860A1 EP 1204860 A1 EP1204860 A1 EP 1204860A1 EP 00957477 A EP00957477 A EP 00957477A EP 00957477 A EP00957477 A EP 00957477A EP 1204860 A1 EP1204860 A1 EP 1204860A1
Authority
EP
European Patent Office
Prior art keywords
substrate
angle
inspection system
deflection element
variable illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00957477A
Other languages
German (de)
English (en)
Inventor
Gilad Almogy
Hadar Mazaki
Zvi Howard Phillip
Silviu Reinhorn
Boris Golberg
Daniel I. Some
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP1204860A1 publication Critical patent/EP1204860A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/06—Means for illuminating specimens
    • G02B21/08—Condensers
    • G02B21/082—Condensers for incident illumination only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems

Definitions

  • the surface of the object viewed is normal to the optic axis of the objective lens and light is used to illuminate the object.
  • light reflected back to the objective lens in a direction substantially parallel to the incident beam is used to form an image.
  • surfaces that are reflective and perpendicular to the light rays appear bright and features that are nonreflective or oblique reflect less light back to the objective lens and appear darker.
  • a dark field system may be implemented with either normal or oblique illumination. In either case, light that is scattered away from the optical axis is collected by dark field detectors positioned at an angle to the surface being viewed to form an image.
  • Inclined surfaces of features such as ridges, pits, scratches, and particles therefore appear bright, providing enhanced contrast of these features from subtle topographic features.
  • reflective features that normally appear bright in bright field illumination are completely black in darkfield illumination and subtle features that are undetectable using bright field illumination may be readily observed with dark field illumination.
  • a laser-scan wafer inspection scenario it is sometimes preferable to illuminate the wafer at an angle normal to the wafer surface, while at other times preferable to use oblique illumination, depending on the details of the wafer materials, patterns and defects.
  • the optical scattering characteristics of semiconductor wafers vary dramatically as the wafers proceed from one step to the next of the IC production flow. Some layers (such as bare silicon) are very smooth whereas some others (such as deposited aluminum) can be very rough and grainy.
  • oblique illumination angles help reduce the unwanted optical scattering of the grains and roughness by the "Lloyd's mirror” effect (a destructive interference of the incident and reflected light at the surface which substantially reduced scatter from roughness and grains whose height from the surface is much less than the wavelength of the incident light, especially for metallic surfaces).
  • Oblique illumination angles have, however, some limitations which make them less useful than normal illumination for some layers.
  • One deficiency of oblique illumination angles is the inability of the light to penetrate between dense lines, such as those used in poly-silicon or metal interconnects.
  • Another deficiency of oblique illumination is the dependence of the scattered signal on the direction of the substrate features (i.e., the loss of the symmetry which exists with normal illumination).
  • variable illumination angle substrate inspection system comprises: a light source providing a light beam; a scanner imparting scanning deflection to the light beam to provide scanning beam approaching the substrate at a first angle; and a deflection element selectively insertable into optical path of the scanning beam and deflecting the scanning beam so as to approach the substrate at a second angle.
  • variable illumination angle inspection system for inspecting a substrate including a light source providing a light beam and a scanning element adapted to output the light beam along a first optical path to the substrate, the first optical path including a portion incident to the substrate and forming a first angle relative to the substrate.
  • a deflection element is selectively introduced into the first optical path to output the light beam along a second optical path to the substrate, the second optical path including a portion incident to the substrate and forming a second angle relative to the substrate, wherein the first angle is different from the second angle.
  • the present invention provides a deflection element for use in a variable illumination angle substrate inspection system.
  • This deflection element includes a first deflecting surface and a second deflecting surface, wherein each of the first and second deflecting surfaces include a mirrored surface.
  • the first deflecting surface is disposed at an angle with respect to said second deflecting surface so that an illumination beam entering the deflection element from a first direction is output from the deflection element in a second direction.
  • Figure 1 depicts an embodiment of a system according to the present invention, wherein the illumination is set to be normal.
  • Figure 2 depicts the system of Figure 1 , wherein the illumination is set to be oblique at a first angle.
  • Figure 3 depicts the system of Figure 1, wherein the illumination is set to be oblique at a second angle.
  • Figure 4 depicts a second embodiment of the system according to the present invention, wherein tilt is provided after the scanning element.
  • Figure 5 depicts an oblique illumination adapter useable in accord with the invention.
  • Figure 6 depicts the oblique illumination adapter of Figure 5 used in conjunction with an autofocus device.
  • Figure 7 depicts another type of oblique illumination adapter useable in accord with the invention.
  • Figures 8a-8b illustrate use of bidirectional illumination in defect detection.
  • Figure 9 depicts an embodiment of the invention wherein illumination is set to be oblique.
  • Figure 10 depicts the embodiment of Figure 9, wherein illumination is set to be normal.
  • Figure 1 illustrates a first embodiment of the invention.
  • Laser 100 such as an argon laser or other suitable high intensity laser beam source, provides a light beam which is used to scan the surface of a semiconductor wafer or substrate 105 held by a vacuum chuck.
  • Conventional optics 1 10 are used to shape the light beam and may include, for example, a beam expander and cylindrical lenses (not shown). The foregoing components and their principles of operation are well-known and are therefore not described herein in detail.
  • a mechanism for scanning the laser beam is provided.
  • This mechanism for scanning the laser beam may include, as well known in the art, a galvanometric scanning planar mirror, a rotating polygon mirror, an acousto-optic deflector (AOD), or any other mechanism for imparting the requisite laser scan motion to the laser beam, wherein this mechanism is represented in Figure 1 by reference numeral 120 and is hereinafter referred to equally as scanning element 120. Additionally, a mechanism for deflecting the scanned beam toward a preferred optical channel (e.g., a normal or an oblique illumination channel) is provided.
  • a preferred optical channel e.g., a normal or an oblique illumination channel
  • the mechanism for deflecting may include, for example, a movable mirror which can be rotated to direct the beam toward either of the channels, a mirror on a linear actuator to move it in and out of the optical path, or an AOD.
  • the scanning element 120 includes a galvanometric scanning planar mirror rotated by a motor 126 able to adjust an angle of the mirror by fine predetermined increments in response to scanning instruction signals from a scanning controller 1 15, as known to those skilled in the art.
  • the mechanism for scanning and the mechanism for deflecting are advantageously incorporated into a single element.
  • the scan takes place around a plurality of central positions wherein each central position corresponds to a deflection of the scanned beam in preferred directions, such as along normal and oblique illumination channels. Two such illumination channels are shown in Figures 1 and 2, which respectively illustrate one central position corresponding to a normal illumination path or channel and another central position corresponding to an oblique illumination channel.
  • Scanning element 120 deflects the light beam in a predetermined direction, such as toward the semiconductor wafer or substrate 105 or toward an optical device such as an objective lens 130 or mirror 140.
  • the scanning can be performed, for example, along a first axis, such as the X-axis, while the wafer is moved by a scanning stage (not shown) along a second axis perpendicular to the first axis, such as the Y-axis.
  • Other combinations of process variables such as the scanning speed, length of the scanning line, distance between adjacent lines, and light beam spot size can be employed to practice the present invention, as desired by the user.
  • optical relay 106 typically comprises a pair of lenses used to relay light between the scanning element 120 and objective 130, which focuses the scanned beam onto the wafer.
  • Dark field detector 160 preferably includes four photomultiplier tubes (PMTs), such as manufactured by Hamamatsu of Japan, or photodiode detectors spaced 90° from one another and arranged at an angle of about 45° with respect to the X and Y axes of the wafer 105 to detect light scattered off features inclined with respect to the X and Y axes of the wafer in a manner known to those skilled in the art.
  • PMTs photomultiplier tubes
  • a greater or lesser number of PMTs or photodiodes may be used and the arrangement of these detectors may also be varied to optimize dark field detection in accord with particular applications.
  • mirror 140, objective 150, first mirror 170, second mirror 180, and actuator 190 are disengaged from the optical path of the scanning light beam.
  • Figure 2 depicts the system of Figure 1 in an oblique illumination mode.
  • the tilt of the scanning element 120 planar mirror is changed to deflect the scanned beam through optical relay 107 and toward mirror 140.
  • Mirror 140 deflects the light toward and through objective 150.
  • Actuator 190 introduces one of a plurality of mirrors 170, 180 into the path of the beam. Although only two mirrors are depicted in Figure 2, the invention may advantageously include more than two mirrors.
  • Each mirror 170, 180 is connected to a respective translatable actuator arm 175, 185.
  • Mirror 180 receives incident light from scanning mirror 120 and any intervening optical elements and deflects the light beam toward wafer 105 at an oblique angle to provide oblique illumination.
  • actuator 190 introduces another mirror, mirror 170, to intercept the light beam output from the scanning mirror 120 and retracts the de-selected mirror 180, as shown in Figures 2 and 3. Insertion of mirror 170 having a different degree of tilt or angle than the de-selected mirror (i.e., mirror 180) provides a change in the angle of illumination, as shown in Figure 3.
  • a plurality of mirrors aligned at predetermined angles are used to direct incident light from each of the pre-aligned mirrors to the same location on wafer 105 from slightly different angles.
  • FIG. 4 depicts another variation of the present invention wherein scanning element comprises acousto-optic deflector (AOD) 145, such as that manufactured by Crystal Technologies Inc. (CTI) of the United States and mirror 125.
  • AOD acousto-optic deflector
  • AOD scanning element 145 includes, for example, a transducer portion for generating sound waves to modulate the optical refractive index of a selected acoustooptic crystal and deflect the light beam and cause an incident light beam to change direction to and trace a path across wafer 105.
  • Mirror 125 directs the light beam output from optics 1 10 into AOD scanning element 145.
  • laser 100 and optics 1 10 can be positioned to directly input the light beam into the AOD scanning element or rotating mirror 145.
  • Oblique illumination is provided by actuator 195, which introduces deflection mirror 186 into the scanning beam to deflect the scanning beam toward mirror 140, whereupon the scanning beam follows a path similar to that illustrated in Figures 1-3. To provide normal illumination, actuator 195 withdraws deflection mirror 186 from the optical path of the light beam output by the AOD scanning element 145.
  • inventions illustrated in Figures 1-4 provide an actuator to selectively insert deflection mirrors into the optical path to obtain a desired angle of illumination.
  • one or more actuators may selectively insert different objectives into the optical path and may selectively insert glass wedges into the optical path, individually or in combination with an objective. As shown in Figures 5-7, these glass wedges are inserted under objective 130 (shown in Figures 1-4), to deflect an illumination beam normal to the substrate to a direction oblique to the substrate.
  • oblique illumination may be obtained from a normal illumination scanning beam by introducing a different optical deflecting device, such as a prism or mirrored glass wedge, into a normal illumination scanning beam. This may be accomplished, for example, using actuator 195 and translatable actuator arm 185, or may be accomplished in any other manner of introducing an optical element into an optical path as can be appreciated by those skilled in the art.
  • a different optical deflecting device such as a prism or mirrored glass wedge
  • the optical deflecting element may include a partially mirrored glass wedge 500 disposed under objective lens 130, as shown in Figure 5.
  • a partially mirrored glass wedge 500 disposed under objective lens 130, as shown in Figure 5.
  • Figure 5 depicts a preferred configuration wherein the oblique-illumination focal point coincides with the normal-illumination focal point.
  • the glass wedge is made of SFL6 glass, however, other variants of the glass wedge could utilize other conventional glasses, such as BK7.
  • the glass wedge apex angle ⁇ is 30°, the width H at the upper surface is 10.88 mm, and the length L at the leftmost surface is 18.8 mm.
  • End portion E may optionally be removed, as indicated in Figure 5, by the shading of end portions E to facilitate positioning of the glass wedge 500 relative to the substrate.
  • Figure 5 is a representation of an optical deflecting element in accord with the invention and should not be construed to define or illustrate precise dimensions.
  • the original back focal length B is 15.8 mm and the objective back focal plane of objective lens 130 is positioned a distance D, 4 mm, from the top of the glass wedge.
  • the distance T from the leftmost surface of the glass wedge to the chief ray, the ray passing through the center of the aperture stop of the optical system, from the objective is 8.08 mm.
  • the numerical aperture (NA) of the lens is selected to be 0.125.
  • a range of NA between about 0.04 and 0.125 may be used, however, based on the selected parameters.
  • this aspect utilizes a right angle triangular prism, other shapes such as irregular polygonal shapes may also be utilized in accord with the invention.
  • the above defined dimensions embody only one specific example of a glass wedge providing oblique illumination and many other combinations of materials, angles, and dimensions may be employed to achieve the above described result in accord with the invention.
  • an apex angle of 30° is chosen to produce an angle of incidence of 60°, however, other incidence angles may be obtained by using different wedge 500 geometries and properties using the above principals and it is to be understood that the illustrative parameters above relate to a specific example and are in no way limiting to the inventive concepts disclosed herein.
  • glass wedge 500 is described as being positionable under objective lens 130, other variants may be advantageously be employed.
  • glass wedge 500 may be incorporated with objective lens 130 or may be embodied within a common structure so as to be simultaneously positionable within incident illumination light.
  • mirrored surfaces 520 such as, but not limited to, reflective aluminum or aluminum alloy coatings, and focused obliquely on the normal-illumination focal point.
  • Light scattered back through the prism and objective to the bright field detector may be used and collected for inspection purposes.
  • all light diffused by the wafer or specimen in any direction can be collected and used for processing.
  • an autofocus mechanism is desirable. Some autofocus systems applicable to normal illumination configurations utilize the light reflected back through the objective. Such an autofocus mechanism may be accommodated by a modified unidirectional oblique illumination adapter.
  • an autofocus prism 600 such as that depicted in Figure 6 may be applied to the glass wedge 500 depicted in Figure 5 to permit auto-focus by a secondary optical path.
  • one or more actuators may selectively insert different objectives into the optical path and may selectively insert glass wedge 500 into the optical path, individually or in combination with an objective and/or autofocus prism 600.
  • the mirrored surface 520 on glass wedge 500 is replaced with a mirrored coating 620 transmitting a portion of the incident light.
  • a bright specular reflection in the normal direction can then be at least partially transmitted back through the mirrored coating 620 to the objective lens 130 to permit bright field detector and autofocus operation.
  • a portion of the incident light from objective lens 130 is transmitted through mirrored coating 620, whereas a remaining portion of the light follows the illustrated oblique illumination path.
  • the light transmitted though mirrored coating 620 could comprise about 5-10% of the light, whereas the remaining portion of the light following the oblique illumination path would correspondingly comprise 90-95% of the light.
  • Autofocus prism 600 may be configured to match the focal height of the normal illumination with the oblique illumination alone or in combination with a low power cylindrical lens 630, as illustrated in Figure 5.
  • the system is not limited to autofocus based on illumination path optics and is aptly suited for autofocus based on other principles, such as PSD in reflected light path for example, as well.
  • autofocus may be implemented when the primary illumination beam is oblique and the detector is positioned to detect and utilize light the incident light reflected from the wafer, in a manner known to those skilled in the art.
  • the system of the invention can work with or without autofocus.
  • oblique illumination may be provided bidirectionally by replacing the glass wedge of Figure 5 with a three-section adapter 790 comprising glass wedges 700, 710, and 720, as shown in Figure 7.
  • Surfaces 730 are covered with a 100% reflection mirrored coating, such as an aluminum or aluminum alloy layer.
  • Surface coating 740 is a polarizing beamsplitter coating provided at the interface of sections 700 and 710 to transmit specified portions of s-polarized light and p-polarized light (hereinafter represented by s 0 % and p 40 % respectively to reflect the transmitted percentages of incident light component) and reflect remaining light components that are not transmitted.
  • the polarization of the incident light is controlled to include both s- and p- polarizations, such as through the use of a quarter- wave plate or a half-wave plate.
  • Surface coating 740 is provided to transmit a greater percentage of s- polarized light than p-polarized light (i.e., s o% > p 0 %).
  • Surface coating 750 is a polarizing beamsplitter coating provided at the interface of sections 710 and 720 to transmit approximately s 75 o% s-polarization and p 7 50% p-polarization and reflect remaining light components that are not transmitted, wherein p 75 o% > s so%.
  • oblique beam 705 emerging from section 700 will be primarily s-polarized, while the oblique beam 725 emerging from section 720 will be primarily p-polarized.
  • surface coatings may be used to transmit any desired component or components of light and are not limited to the above example.
  • the surface coatings 740 and 750 may comprise a plurality of layers adjacent one another, wherein the function of the coatings 740 and 750 are shared by the plurality of layers.
  • the s-polarizing beamsplitter coating 740 may utilize more than one layer, wherein the combination of layers produces a desired polarization level.
  • a first s-polarizing beamsplitter coating 740 having a first polarization ratio may be used in conjunction with a second s-polarizing non-beamsplitter coating 741 (not shown) having a second polarization ratio provided just after the first s-polarizing beam splitter coating 740 to produce, in combination, the desired polarization level.
  • the surface coatings 740 and 750 may be replaced by combinations of half- wave plates and polarizing beamsplitter coatings.
  • a p-polarizing beamsplitter instead of s- polarizing beamsplitter coating 740, a p-polarizing beamsplitter may be disposed between two half-wave plates. The first half-wave plate would rotate the incoming polarization by 90 degrees, turning the s- into p- and vice versa, as known to those skilled in the art. The p-polarizing beamsplitter coating would transmit p- (originally s-) and the second half-wave plate would rotate the incoming polarization another 90 degrees, turning the incoming p-polarization into an output s-polarization.
  • This embodiment additionally contemplates other combinations of wave plates, such as quarter wave-plates, and/or polarizing beamsplitter coatings to achieve a desired output polarization ratio.
  • One polarization ratio suitable for use with the system of the invention is approximately 99: 1.
  • the three-section adapter 790 is introduced into the light path, such as by actuator 190 and translatable actuator arm 185, to deflect light incident thereon toward a wafer or substrate at an oblique angle and focus the oblique illumination at the same distance and position as illumination light provided in the normal direction along axis A coincident with a center of the objective lens 130.
  • the glass wedge is made of SFL6 glass, however, other variants of the three-section adapter 790 could utilize other conventional glasses, such as BK7.
  • the glass wedge apex angle ⁇ is 30°
  • the width H at the upper surface is 10.88 mm
  • the length L at the leftmost surface is 18.8 mm.
  • End portion E may optionally be removed, as indicated in Figure 7, by the shading of end portions E to facilitate positioning of the glass wedge relative to the substrate.
  • the original back focal length B is 15.8 mm and the objective back focal plane of objective lens 130 is positioned a distance D, 4 mm, from the top of the three-section adapter 790.
  • the distance T from the leftmost or rightmost surface of glass wedges 700 and 720, respectively, to the chief ray, the ray passing through the center of the aperture stop of the optical system, from objective 130 is 8.08 mm.
  • the numerical aperture (NA) of the lens is 0.125. A range of NA between about 0.04 and 0.125 may be used, however, based on the selected parameters. It is to be understood that Figure 7 is a representation of an adapter 790 deflecting a light beam in accord with the invention and should not be construed to define or illustrate precise dimensions.
  • three-section adapter 790 permit continued used of autofocus systems, as described above and as known to those skilled in the art, even when the primary illumination beam is oblique. Still further, as with the previous embodiments, one or more actuators may selectively insert different objectives into the optical path and may selectively insert three-section adapter 790 into the optical path, individually or in combination with an objective and/or focusing device.
  • oblique beam 705 is specularly reflected off surface 775, or a particle or topographical feature thereon or therein. This reflected beam 705 is in turn reflected off of reflective surface 730 on the rightmost side of wedge 720 directly toward surface coating 750 or indirectly toward surface coating 750 by way of opposing reflective surface coating 730.
  • surface coating 750 transmits about 1% of the s-polarized portion of the beam 705 and about 99% of the p- polarizated component and such portion of reflected beam 705 is transmitted through the p-polarizing beamsplitter coating 750. Similarly, a portion of reflected beam 725 is transmitted through the s-polarizing beamsplitter coating 740. These transmitted portions continue back through the objective to a bright field detector and autofocus. In addition to other autofocus mechanisms, this device permits autofocus to be accomplished by verifying that the image consists of a single, rather than double, scan line. Further, because the two polarizations propagate in opposite directions, the scattered light has an azimuthal polarization dependence which can assist in defect discrimination.
  • the bidirectional illumination utilizing s- and p- polarized light affords a small degree of height discrimination of defects, as shown in Figures 8a and 8b, on and within a transparent substrate 810.
  • Images of a small feature 800 on the surface of the substrate 810 appear to be in one place in images taken from different darkfield perspectives since the incident beams overlap, as shown in Figure 8a.
  • the image is doubled if feature 800 is below the surface of the substrate, as shown in Figure 8b, or above the surface of the substrate since the incident beams 820, 830 are separated and the feature 800 is illuminated twice during a scan.
  • laser 900 outputs a light beam into optics 910, which shapes the beam and provides scanning deflection employing, for example, an AOD scanning element or mirror (not shown).
  • optics 910 may include, for example, a beam expander and cylindrical lenses (not shown) or other optical shaping elements known to those skilled in the art.
  • optical relay may be provided to relay light from laser 900 to objective 960 and dark field detectors 950 may be used to collect scattered light from the wafer 905 to permit detection of particles and defects, as commonly known by those skilled in the art.
  • actuator 920 When normal illumination is needed, actuator 920 introduces a deflection mirror to deflect the light towards mirrors 930, through optical relay 108, and through objective 960 to a selected substrate coordinate, the first optical path including a portion incident to the substrate 905, as shown in Figure 10.
  • the above systems provide a scanning beam arranged to scan an entire wafer in either a normal or an oblique mode.
  • the system may be adapted to provide selective normal or oblique scanning of individual portions of the wafer to, for example, enhance defect detection of those areas.
  • the invention set forth in the appended claims permits detailed examination of specific coordinates of interest, as well as global examination of entire wafers from a preferred perspective.
  • the invention provides an apparatus for selectively and advantageously permitting use of normal scanning illumination or oblique scanning illumination to optimize the inspection characteristics of a scanned layer during wafer inspection.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

La présente invention concerne un système d'examen à angle d'éclairage variable. Il comporte une source de lumière donnant un faisceau lumineux, et un dispositif de balayage provoquant la déflexion du faisceau lumineux de façon que le faisceau de balayage se rapproche du substrat selon un premier angle d'incidence. Un déflecteur peut s'insérer sélectivement dans un trajet optique du faisceau de balayage. Cela permet la déflexion du faisceau de balayage de façon à provoquer une approche du substrat par le faisceau de balayage selon un second angle.
EP00957477A 1999-08-16 2000-08-16 Systeme d'examen de plaquettes a angle d'incidence variable de l'eclairage Withdrawn EP1204860A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14921599P 1999-08-16 1999-08-16
US149215P 1999-08-16
PCT/US2000/022410 WO2001013098A1 (fr) 1999-08-16 2000-08-16 Systeme d'examen de plaquettes a angle d'incidence variable de l'eclairage

Publications (1)

Publication Number Publication Date
EP1204860A1 true EP1204860A1 (fr) 2002-05-15

Family

ID=22529270

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00957477A Withdrawn EP1204860A1 (fr) 1999-08-16 2000-08-16 Systeme d'examen de plaquettes a angle d'incidence variable de l'eclairage

Country Status (4)

Country Link
EP (1) EP1204860A1 (fr)
JP (1) JP2003507707A (fr)
KR (1) KR100829658B1 (fr)
WO (1) WO2001013098A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996039619A1 (fr) 1995-06-06 1996-12-12 Kla Instruments Corporation Controle optique d'un specimen au moyen des reactions du specimen dans des canaux multiples
US6288780B1 (en) 1995-06-06 2001-09-11 Kla-Tencor Technologies Corp. High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
IL144806A (en) 2001-08-08 2005-11-20 Nova Measuring Instr Ltd Method and apparatus for process control in semiconductor manufacturing
US7236847B2 (en) 2002-01-16 2007-06-26 Kla-Tencor Technologies Corp. Systems and methods for closed loop defect reduction
KR100791005B1 (ko) 2006-12-01 2008-01-04 삼성전자주식회사 사입사 조건에서의 포토마스크의 투과율 측정장치 및 그를이용한 측정방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0493851A1 (fr) * 1991-01-02 1992-07-08 Jose Vande Kerckhove Dispositif pour l'introduction de câbles conducteurs dans des tubes installés, et procédé utilisant un tel dispositif
WO1999014575A1 (fr) * 1997-09-19 1999-03-25 Kla-Tencor Corporation Systeme d'inspection d'echantillon ameliore

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220940A (ja) * 1983-05-20 1985-11-05 Hitachi Ltd 異物自動検査装置
US5106196A (en) * 1990-08-21 1992-04-21 Brierley Philip R Single adjustment specular reflection accessory for spectroscopy
US5189481A (en) * 1991-07-26 1993-02-23 Tencor Instruments Particle detector for rough surfaces
US5486919A (en) * 1992-04-27 1996-01-23 Canon Kabushiki Kaisha Inspection method and apparatus for inspecting a particle, if any, on a substrate having a pattern
IT1258018B (it) * 1992-07-28 1996-02-20 Gd Spa Dispositivo di rilevamento, in particolare per il controllo superficiale di sigarette
JP3684248B2 (ja) * 1995-01-11 2005-08-17 株式会社トプコン レーザ回転照射装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0493851A1 (fr) * 1991-01-02 1992-07-08 Jose Vande Kerckhove Dispositif pour l'introduction de câbles conducteurs dans des tubes installés, et procédé utilisant un tel dispositif
WO1999014575A1 (fr) * 1997-09-19 1999-03-25 Kla-Tencor Corporation Systeme d'inspection d'echantillon ameliore

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO0113098A1 *

Also Published As

Publication number Publication date
KR100829658B1 (ko) 2008-05-16
JP2003507707A (ja) 2003-02-25
KR20020025222A (ko) 2002-04-03
WO2001013098A1 (fr) 2001-02-22

Similar Documents

Publication Publication Date Title
US6853446B1 (en) Variable angle illumination wafer inspection system
US6922236B2 (en) Systems and methods for simultaneous or sequential multi-perspective specimen defect inspection
US6657216B1 (en) Dual spot confocal displacement sensor
JP2752003B2 (ja) 走査機能を備えた検査干渉計
US7522275B2 (en) High throughput darkfield/brightfield wafer inspection system using advanced optical techniques
US6768543B1 (en) Wafer inspection apparatus with unique illumination methodology and method of operation
US7714998B2 (en) Image splitting in optical inspection systems
CN109564884B (zh) 具有大颗粒监测和激光功率控制的表面缺陷检验
TWI402498B (zh) 影像形成方法及影像形成裝置
EP0239206A1 (fr) Système optique d'image à foyer commun avec un rapport signal/bruit amélioré
IL96483A (en) Optical inspection method and apparatus
JPH07198342A (ja) 薄膜厚測定装置
US7397553B1 (en) Surface scanning
WO2017210281A1 (fr) Système d'inspection des nano-défauts d'une plaquette en champ sombre à l'aide d'un faisceau singulier
US5309214A (en) Method for measuring distributed dispersion of gradient-index optical elements and optical system to be used for carrying out the method
JPS6052021A (ja) 位置検出方法
USRE32660E (en) Confocal optical imaging system with improved signal-to-noise ratio
JPS61104243A (ja) 異物検出方法及びその装置
WO2001013098A1 (fr) Systeme d'examen de plaquettes a angle d'incidence variable de l'eclairage
JP2004515750A (ja) 複数ビーム検査装置および方法
US7315364B2 (en) System for inspecting a surface employing configurable multi angle illumination modes
WO2003060589A1 (fr) Dispositif et procede de mise au point automatique
GB2135448A (en) Inspection apparatus and method
JPH04297810A (ja) 光学検査装置
JP2666495B2 (ja) 屈折率分布測定方法及び屈折率分布測定装置

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20020213

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

RIN1 Information on inventor provided before grant (corrected)

Inventor name: ALMOGY, GILAD

Inventor name: PHILLIP, ZVI, HOWARD

Inventor name: MAZAKI, HADAR

Inventor name: REINHORN, SILVIU

Inventor name: GOLBERG, BORIS

Inventor name: SOME, DANIEL, I.

RIN1 Information on inventor provided before grant (corrected)

Inventor name: SOME, DANIEL, I.

Inventor name: MAZAKI, HADAR

Inventor name: GOLBERG, BORIS

Inventor name: ALMOGY, GILAD

Inventor name: REINHORN, SILVIU

Inventor name: PHILLIP, TZVI HOWARD

17Q First examination report despatched

Effective date: 20061208

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20100302