EP1197825A3 - Integrated circuit with parts supplied with a different supply voltage - Google Patents

Integrated circuit with parts supplied with a different supply voltage Download PDF

Info

Publication number
EP1197825A3
EP1197825A3 EP01121398A EP01121398A EP1197825A3 EP 1197825 A3 EP1197825 A3 EP 1197825A3 EP 01121398 A EP01121398 A EP 01121398A EP 01121398 A EP01121398 A EP 01121398A EP 1197825 A3 EP1197825 A3 EP 1197825A3
Authority
EP
European Patent Office
Prior art keywords
supply voltage
voltage
potential divider
parts
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01121398A
Other languages
German (de)
French (fr)
Other versions
EP1197825A2 (en
EP1197825B1 (en
Inventor
Paul Zehnich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dialog Semiconductor GmbH
Original Assignee
Dialog Semiconductor GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dialog Semiconductor GmbH filed Critical Dialog Semiconductor GmbH
Publication of EP1197825A2 publication Critical patent/EP1197825A2/en
Publication of EP1197825A3 publication Critical patent/EP1197825A3/en
Application granted granted Critical
Publication of EP1197825B1 publication Critical patent/EP1197825B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The device has first parts whose supply voltage is the same as the external voltage supply and second parts with a lower supply voltage derived from the first. The internal supply voltage is provided by an active potential divider with a first resistive potential divider between the supply voltage and reference potential, an impedance converter and a circuit for load-dependent control of the resistive potential divider tapping voltage. The device has first parts whose supply voltage is the same as the external voltage supply and second parts with a lower supply voltage derived from the first supply voltage. The internal supply voltage is provided by an active potential divider containing a first resistive potential divider (R1, R2) between the supply voltage connection (Pad) and a reference potential, an impedance converter (T1) and a circuit for load-dependent control of the divided voltage at the tapping (X) of the first resistive potential divider.
EP01121398A 2000-10-12 2001-09-06 Integrated circuit with parts supplied with a different supply voltage Expired - Lifetime EP1197825B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10050561 2000-10-12
DE10050561A DE10050561B4 (en) 2000-10-12 2000-10-12 Integrated circuit with circuit parts with different supply voltage

Publications (3)

Publication Number Publication Date
EP1197825A2 EP1197825A2 (en) 2002-04-17
EP1197825A3 true EP1197825A3 (en) 2004-07-07
EP1197825B1 EP1197825B1 (en) 2009-05-27

Family

ID=7659544

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01121398A Expired - Lifetime EP1197825B1 (en) 2000-10-12 2001-09-06 Integrated circuit with parts supplied with a different supply voltage

Country Status (6)

Country Link
US (1) US6605833B2 (en)
EP (1) EP1197825B1 (en)
JP (1) JP2002185302A (en)
AT (1) ATE432491T1 (en)
DE (2) DE10050561B4 (en)
HK (1) HK1048671A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1369762A1 (en) 2002-05-29 2003-12-10 Dialog Semiconductor GmbH Active subscriber information module
US7602019B2 (en) * 2006-04-20 2009-10-13 Texas Instruments Incorporated Drive circuit and drain extended transistor for use therein

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0718740A2 (en) * 1994-12-20 1996-06-26 STMicroelectronics, Inc. Dynamically controlled voltage reference circuit
US5818212A (en) * 1990-11-30 1998-10-06 Samsung Electronics Co., Ltd. Reference voltage generating circuit of a semiconductor memory device
US5990671A (en) * 1997-08-05 1999-11-23 Nec Corporation Constant power voltage generator with current mirror amplifier optimized by level shifters

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
US4672246A (en) * 1986-03-10 1987-06-09 Honeywell Inc. Low offset MOSFET transistor switch control
DE3706907C2 (en) * 1987-03-04 1996-09-12 Bosch Gmbh Robert Voltage regulator pre-stage with low voltage loss as well as voltage regulator with such a pre-stage
NL8900050A (en) * 1989-01-10 1990-08-01 Philips Nv DEVICE FOR MEASURING A CURRENT CURRENT OF AN INTEGRATED MONOLITIC DIGITAL CIRCUIT, INTEGRATED MONOLITIC DIGITAL CIRCUIT PROVIDED WITH SUCH A DEVICE AND TESTING EQUIPMENT PROVIDED WITH SUCH A DEVICE.
JP2883625B2 (en) * 1989-03-30 1999-04-19 株式会社東芝 MOS type charging circuit
JPH087636B2 (en) * 1990-01-18 1996-01-29 シャープ株式会社 Voltage drop circuit of semiconductor device
GB2262675A (en) * 1991-12-20 1993-06-23 Codex Corp Comparator start-up arrangement
US5815040A (en) * 1996-12-30 1998-09-29 Anthony T. Barbetta Wide bandwidth, current sharing, MOSFET audio power amplifier with multiple feedback loops
US6097632A (en) * 1997-04-18 2000-08-01 Micron Technology, Inc. Source regulation circuit for an erase operation of flash memory
US6160440A (en) * 1998-09-25 2000-12-12 Intel Corporation Scaleable charge pump for use with a low voltage power supply
JP2000331490A (en) * 1999-05-18 2000-11-30 Hitachi Ltd Semiconductor integrated circuit device
JP3278635B2 (en) * 1999-05-27 2002-04-30 沖電気工業株式会社 Semiconductor integrated circuit
US6304131B1 (en) * 2000-02-22 2001-10-16 Texas Instruments Incorporated High power supply ripple rejection internally compensated low drop-out voltage regulator using PMOS pass device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818212A (en) * 1990-11-30 1998-10-06 Samsung Electronics Co., Ltd. Reference voltage generating circuit of a semiconductor memory device
EP0718740A2 (en) * 1994-12-20 1996-06-26 STMicroelectronics, Inc. Dynamically controlled voltage reference circuit
US5990671A (en) * 1997-08-05 1999-11-23 Nec Corporation Constant power voltage generator with current mirror amplifier optimized by level shifters

Also Published As

Publication number Publication date
HK1048671A1 (en) 2003-04-11
JP2002185302A (en) 2002-06-28
DE10050561A1 (en) 2002-05-16
EP1197825A2 (en) 2002-04-17
US20020043670A1 (en) 2002-04-18
EP1197825B1 (en) 2009-05-27
DE50114910D1 (en) 2009-07-09
ATE432491T1 (en) 2009-06-15
DE10050561B4 (en) 2005-04-28
US6605833B2 (en) 2003-08-12

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