EP1197825B1 - Integrated circuit with parts supplied with a different supply voltage - Google Patents

Integrated circuit with parts supplied with a different supply voltage Download PDF

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Publication number
EP1197825B1
EP1197825B1 EP01121398A EP01121398A EP1197825B1 EP 1197825 B1 EP1197825 B1 EP 1197825B1 EP 01121398 A EP01121398 A EP 01121398A EP 01121398 A EP01121398 A EP 01121398A EP 1197825 B1 EP1197825 B1 EP 1197825B1
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EP
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Prior art keywords
supply voltage
voltage
circuit
mosfet
potential divider
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EP01121398A
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German (de)
French (fr)
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EP1197825A3 (en
EP1197825A2 (en
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Paul Zehnich
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Dialog Semiconductor GmbH
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Dialog Semiconductor GmbH
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to an integrated circuit (IC) having first circuit parts whose supply voltage is equal to the external supply voltage of the IC and with second circuit parts whose supply voltage is smaller than the external supply voltage and as an internal supply voltage derived from the former.
  • IC integrated circuit
  • first circuit parts consist of large structures which are usually arranged in the periphery and work with the external power supply of normally 5V.
  • second circuit parts are primarily logic circuits which, for reasons of higher signal processing speed and lower power dissipation, have a low internal supply voltage of e.g. 3 V work.
  • This internal supply voltage is generated by a controller that does not appear to the outside.
  • the latter comprises a reference element, e.g. a Zener diode or a bandgap structure, a negative feedback, compensated variable gain amplifier and external support capacitors is therefore relatively expensive and provides the internal supply voltage after switching on the external supply voltage with a delay caused by the external backup capacitors.
  • the US-A-5 818 212 shows a circuit that provides an internal voltage that is largely independent of temperature and manufacturing variations.
  • the circuit includes a constant voltage source that provides a reference voltage to the first input of a differential amplifier. Its second input receives a voltage proportional to the internal voltage.
  • the output of the differential amplifier controls an impedance converter.
  • the invention is based on the object, an integrated To provide circuit of the introductory genus, which provides with less effort to be integrated circuit structures and without external components, the internal supply voltage almost instantaneously after the application of the external supply voltage.
  • an internal supply voltage supplying, active voltage divider comprising a first resistance voltage divider between the supply voltage terminal and the reference potential, a connected to the tap of the first resistor voltage divider impedance converter and a circuit for load-dependent control of the partial voltage at the midpoint of the first resistance voltage divider comprises.
  • the impedance converter can, as is known, be a lying between the supply voltage terminal and an internal supply voltage point of the second circuit parts drain-source path of a first MOSFET whose gate is connected to the center of the first resistance voltage divider (claim 2).
  • the circuit for load-dependent control of the partial voltage at the midpoint of the first resistance voltage divider can in particular be a drain-source path lying between the supply voltage connection and the internal supply voltage point a second MOSFET whose gate is connected to the center of a second resistor voltage divider between the supply voltage terminal and the reference potential, with a lying in the drain branch of the second MOSFET third MOSFET, with a fourth, lying between the supply voltage terminal and the tap of the first resistive voltage divider a MOSFET Current mirror circuit forms (claim 3).
  • the drawing shows in simplified form the circuit diagram of that part of an integrated circuit which serves to obtain an internal supply voltage according to the present proposal.
  • the lying on a reference potential, integrated circuit receives via a pad terminal, the usual external supply voltage of + 5 V and includes not shown first circuit parts whose supply voltage is equal to this external supply voltage.
  • the integrated circuit further comprises second circuit parts symbolized by the block labeled "Logic" which, to achieve a higher signal processing speed and to save power dissipation with an internal supply voltage of e.g. +3 V work.
  • this internal supply voltage is the circuit shown in detail. It comprises a first resistance voltage divider R1, R2 between the supply voltage terminal Pad and the reference potential.
  • the center X of this first resistive voltage divider R1, R2 is connected to the gate of a first MOSFET structure T1 whose drain / source path between the pad and the supply voltage point of the second circuit part labeled "logic".
  • T1 acts as an impedance converter.
  • the voltage at tap X may be at 4.2V when the gate / source voltage V THN is about 1.2V to drop 2V across the drain / source path. With increasing power consumption of the second circuit parts of this voltage drop increases.
  • the drain / source path of a second MOSFET structure T1 ' which gate with a tap X' of a second resistance voltage divider R1 ', R2' between the supply voltage terminal Pad and the Reference potential is connected.
  • the drain branch of the second MOSFET T1 ' is the source / drain path of a third MOSFET structure T2' whose gate is connected on the one hand to the drain of the second MOSFET T1 and on the other hand to the gate of a fourth MOSFET structure T2 whose drain / Source path is parallel to the partial resistance R1 of the first resistance voltage divider R1, R2.
  • the gate / source voltage V THp is about 0.9 V for the example case considered here.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Logic Circuits (AREA)
  • Control Of Voltage And Current In General (AREA)

Abstract

The device has first parts whose supply voltage is the same as the external voltage supply and second parts with a lower supply voltage derived from the first. The internal supply voltage is provided by an active potential divider with a first resistive potential divider between the supply voltage and reference potential, an impedance converter and a circuit for load-dependent control of the resistive potential divider tapping voltage. The device has first parts whose supply voltage is the same as the external voltage supply and second parts with a lower supply voltage derived from the first supply voltage. The internal supply voltage is provided by an active potential divider containing a first resistive potential divider (R1, R2) between the supply voltage connection (Pad) and a reference potential, an impedance converter (T1) and a circuit for load-dependent control of the divided voltage at the tapping (X) of the first resistive potential divider.

Description

Die Erfindung betrifft eine integrierte Schaltung (IC) mit ersten Schaltungsteilen, deren Versorgungsspannung gleich der äußeren Versorgungsspannung des ICs ist und mit zweiten Schaltungsteilen, deren Versorgungsspannung kleiner als die äußere Versorgungsspannung und als interne Versorgungsspannung von ersterer abgeleitet ist.The invention relates to an integrated circuit (IC) having first circuit parts whose supply voltage is equal to the external supply voltage of the IC and with second circuit parts whose supply voltage is smaller than the external supply voltage and as an internal supply voltage derived from the former.

Derartige integrierte Schaltungen sind bekannt. Diejenigen Schaltungsteile, die vorstehend als erste Schaltungsteile bezeichnet wurden, bestehen aus großen Strukturen, die gewöhnlich in der Peripherie angeordnet sind und mit der äußeren Spannungsversorgung von normalerweise 5V arbeiten. Diejenigen Schaltungsteile, die vorstehend als zweite Schaltungsteile bezeichnet sind, sind in erster Linie Logikschaltungen, die aus Gründen der höheren Signalverarbeitungsgeschwindigkeit und der niedrigeren Verlustleistung mit einer niedrigen internen Versorgungsspannung von z.B. 3 V arbeiten. Diese interne Versorgungsspannung wird von einem nach außen nicht in Erscheinung tretenden Regler erzeugt. Letzterer umfaßt ein Referenzelement, z.B. eine Zenerdiode oder eine Bandgapstruktur, einen gegengekoppelten, kompensierten Regelverstärker und externe Stützkondensatoren, ist also relativ aufwendig und stellt die interne Versorgungsspannung nach dem Einschalten der äußeren Versorgungsspannung mit einer durch die externen Stützkondensatoren bedingten Verzögerung zur Verfügung.Such integrated circuits are known. Those circuit parts referred to above as first circuit parts consist of large structures which are usually arranged in the periphery and work with the external power supply of normally 5V. Those circuit parts referred to above as second circuit parts are primarily logic circuits which, for reasons of higher signal processing speed and lower power dissipation, have a low internal supply voltage of e.g. 3 V work. This internal supply voltage is generated by a controller that does not appear to the outside. The latter comprises a reference element, e.g. a Zener diode or a bandgap structure, a negative feedback, compensated variable gain amplifier and external support capacitors is therefore relatively expensive and provides the internal supply voltage after switching on the external supply voltage with a delay caused by the external backup capacitors.

Die US-A-5 818 212 zeigt eine Schaltung, die eine interne Spannung liefert, die weitgehend unabhängig von temperatur-und fertigungsbedingten Schwankungen ist. Die Schaltung umfasst eine Konstantspannungsquelle, die eine Referenzspannung an den ersten Eingang eines Differenzverstärkers liefert. Dessen zweiter Eingang erhält eine der internen Spannung proportionale Spannung. Der Ausgang des Differenzverstärkers steuert einen Impedanzwandler.The US-A-5 818 212 shows a circuit that provides an internal voltage that is largely independent of temperature and manufacturing variations. The circuit includes a constant voltage source that provides a reference voltage to the first input of a differential amplifier. Its second input receives a voltage proportional to the internal voltage. The output of the differential amplifier controls an impedance converter.

Der Erfindung liegt die Aufgabe zugrunde, eine integrierte Schaltung der einleitend angegebenen Gattung zu schaffen, die mit geringerem Aufwand an zu integrierenden Schaltungsstrukturen und ohne externe Komponenten die interne Versorgungsspannung nahezu verzögerungsfrei nach dem Anlegen der äußeren Versorgungsspannung zur Verfügung stellt.The invention is based on the object, an integrated To provide circuit of the introductory genus, which provides with less effort to be integrated circuit structures and without external components, the internal supply voltage almost instantaneously after the application of the external supply voltage.

Diese Aufgabe ist bei einer integrierten Schaltung der im Oberbegriff des Anspruches 1 angegebenen Gattung erfindungsgemäß durch einen die interne Versorgungsspannung liefernden, aktiven Spannungsteiler gelöst, der einen ersten Widerstandsspannungsteiler zwischen dem Versorgungsspannungsanschluß und dem Bezugspotential, einen an den Abgriff des ersten Widerstandsspannungsteilers angeschlossener Impedanzwandler und eine Schaltung zur lastabhängigen Steuerung der Teilspannung am Mittelpunkt des ersten Widerstandsspannungsteilers umfaßt.This object is achieved in an integrated circuit of the type specified in the preamble of claim 1 according to the invention by an internal supply voltage supplying, active voltage divider comprising a first resistance voltage divider between the supply voltage terminal and the reference potential, a connected to the tap of the first resistor voltage divider impedance converter and a circuit for load-dependent control of the partial voltage at the midpoint of the first resistance voltage divider comprises.

Diesem Vorschlag liegt die Erkenntnis zugrunde, daß wegen der in der Regel auf etwa ± 10 % oder besser stabilisierten, äußeren Versorgungsspannung ein integrierter Regler zur Gewinnung der internen Versorgungsspannung nicht erforderlich ist sondern es völlig ausreicht, die interne Versorgungsspannung von der äußeren Versorgungsspannung abzuleiten und lastunabhängig in den Grenzen der Stabilisierung der äußeren Versorgungsspannung konstant zu halten.This proposal is based on the finding that because of the usually stabilized to about ± 10% or better, external supply voltage an integrated regulator for obtaining the internal supply voltage is not sufficient but it is sufficient to derive the internal supply voltage from the external supply voltage and load independent to be kept constant within the limits of stabilization of the external supply voltage.

Der Impedanzwandler kann, wie an sich bekannt, eine zwischen dem Versorgungsspannungsanschluß und einem internen Versorgungsspannungspunkt der zweiten Schaltungsteile liegende Drain-Source-Strecke eines ersten MOSFET sein, dessen Gate mit dem Mittelpunkt des ersten Widerstandsspannungsteilers verbunden ist (Anspruch 2).The impedance converter can, as is known, be a lying between the supply voltage terminal and an internal supply voltage point of the second circuit parts drain-source path of a first MOSFET whose gate is connected to the center of the first resistance voltage divider (claim 2).

Die Schaltung zur lastabhängigen Steuerung der Teilspannung an dem Mittelpunkt des ersten Widerstandsspannungsteilers kann insbesondere eine zwischen dem Versorgungsspannungsanschluß und dem internene Versorgungsspannungspunkt liegende Drain-Source-Strecke eines zweiten MOSFET sein, dessen Gate mit dem Mittelpunkt eines zweiten Widerstandsspannungsteilers zwischen dem Versorgungsspannungsanschluß und dem Bezugspotential verbunden ist, mit einem im Drainzweig des zweiten MOSFET liegenden dritten MOSFET, der mit einem vierten, zwischen dem Versorgungsspannungsanschluß und dem Abgriff des ersten Widerstandsspannungsteilers liegenden MOSFET eine Stromspiegelschaltung bildet (Anspruch 3).The circuit for load-dependent control of the partial voltage at the midpoint of the first resistance voltage divider can in particular be a drain-source path lying between the supply voltage connection and the internal supply voltage point a second MOSFET whose gate is connected to the center of a second resistor voltage divider between the supply voltage terminal and the reference potential, with a lying in the drain branch of the second MOSFET third MOSFET, with a fourth, lying between the supply voltage terminal and the tap of the first resistive voltage divider a MOSFET Current mirror circuit forms (claim 3).

Die Zeichnung zeigt vereinfacht das Schaltbild desjenigen Teils einer integrierten Schaltung, der zur Gewinnung einer internen Versorgungsspannung nachdem vorliegenden Vorschlag dient.The drawing shows in simplified form the circuit diagram of that part of an integrated circuit which serves to obtain an internal supply voltage according to the present proposal.

Die auf einem Bezugspotential liegende, integrierte Schaltung erhält über einen Anschluß Pad die übliche äußere Versorgungsspannung von + 5 V und umfaßt nicht dargestellte erste Schaltungsteile, deren Versorgungsspannung gleich dieser äußeren Versorgungsspannung ist. Die integrierte Schaltung umfaßt des weiteren durch den mit "Logik" bezeichneten Block symbolisierte zweite Schaltungsteile, die zur Erzielung einer höheren Signalverarbeitungsgeschwindigkeit und zur Einsparung von Verlustleistung mit einer internen Versorgungsspannung von z.B. +3 V arbeiten.The lying on a reference potential, integrated circuit receives via a pad terminal, the usual external supply voltage of + 5 V and includes not shown first circuit parts whose supply voltage is equal to this external supply voltage. The integrated circuit further comprises second circuit parts symbolized by the block labeled "Logic" which, to achieve a higher signal processing speed and to save power dissipation with an internal supply voltage of e.g. +3 V work.

Zur Gewinnung dieser internen Versorgungsspannung dient die im einzelnen dargestellte Schaltung. Sie umfaßt einen ersten Widerstandsspannungsteiler R1, R2 zwischen dem Versorgungsspannungsanschluß Pad und dem Bezugspotential. Der Mittelpunkt X dieses ersten Widerstandsspannungsteilers R1, R2 ist mit dem Gate einer ersten MOSFET-Struktur T1 verbunden, deren Drain/ Source-Strecke zwischen Pad und dem Versorgungsspannungspunkt der mit "Logik" bezeichneten, zweiten Schaltungsteile liegt. Dabei wirkt T1 als Impedanzwandler. Bei einer internen Versorgungsspannung von 3 V und einer angenommenen Leistungsaufnahme der zweiten Schaltungsteile von z.B. 100 mW kann die Spannung am Abgriff X z.B. bei 4,2 V liegen, wenn die Gate/Source-Spannung VTHN etwa 1,2 V beträgt, damit über der Drain/Source-Strecke 2 V abfallen. Mit steigender Leistungsaufnahme der zweiten Schaltungsteile nimmt dieser Spannungsabfall zu. Zur Erkennung dieser Änderung der Belastungssituation liegt zwischen dem Versorgungsspannungsanschluß Pad und dem internen Versorgungsspannungspunkt die Drain/Source-Strecke einer zweiten MOSFET-Struktur T1', deren Gate mit einem Abgriff X' eines zweiten Widerstandsspannungsteilers R1', R2' zwischen dem Versorgungsspannungsanschluß Pad und dem Bezugspotential verbunden ist. Im Drain-Zweig des zweiten MOSFET T1' liegt die Source/Drain-Strecke einer dritten MOSFET-Struktur T2', deren Gate einerseits mit dem Drainanschluß des zweiten MOSFET T1 und andererseits mit dem Gate einer vierten MOSFET-Struktur T2 verbunden ist, deren Drain/ Source-Strecke parallel zu dem Teilwiderstand R1 des ersten Widerstandsspannungsteilers R1, R2 liegt. Die Gate/Source-Spannung VTHp liegt für den hier betrachteten Beispielsfall bei etwa 0,9 V. Mit dieser an sich bekannten Stromspiegelschaltung wird erreicht, daß die Span-nung am Mittelpunkt (X) des ersten Widerstandsspannungsteilers R1, R2 steigt, weil die Source/Drain-Strecke des vierten MOSFET T2 niederohmiger wird, wenn die interne Versorgungsspannung bei zunehmender Stromaufnahme der zweiten Schaltungsteile sinkt. Bei abnehmendem Leistungsverbrauch ergibt sich das umgekehrte Verhalten.To obtain this internal supply voltage is the circuit shown in detail. It comprises a first resistance voltage divider R1, R2 between the supply voltage terminal Pad and the reference potential. The center X of this first resistive voltage divider R1, R2 is connected to the gate of a first MOSFET structure T1 whose drain / source path between the pad and the supply voltage point of the second circuit part labeled "logic". In this case, T1 acts as an impedance converter. With an internal supply voltage of 3 V and an assumed power consumption of the second circuit parts of eg 100 mW For example, the voltage at tap X may be at 4.2V when the gate / source voltage V THN is about 1.2V to drop 2V across the drain / source path. With increasing power consumption of the second circuit parts of this voltage drop increases. To detect this change in the load situation is between the supply voltage terminal Pad and the internal supply voltage point, the drain / source path of a second MOSFET structure T1 'whose gate with a tap X' of a second resistance voltage divider R1 ', R2' between the supply voltage terminal Pad and the Reference potential is connected. In the drain branch of the second MOSFET T1 'is the source / drain path of a third MOSFET structure T2' whose gate is connected on the one hand to the drain of the second MOSFET T1 and on the other hand to the gate of a fourth MOSFET structure T2 whose drain / Source path is parallel to the partial resistance R1 of the first resistance voltage divider R1, R2. The gate / source voltage V THp is about 0.9 V for the example case considered here. With this current mirror circuit known per se , it is achieved that the voltage at the midpoint (X) of the first resistance voltage divider R1, R2 increases because the voltage rises Source / drain path of the fourth MOSFET T2 becomes lower impedance, when the internal supply voltage decreases with increasing current consumption of the second circuit parts. With decreasing power consumption results in the reverse behavior.

Claims (3)

  1. An integrated circuit (IC), comprising first circuit parts whose supply voltage is the same as the external supply voltage of the IC and second circuit parts whose supply voltage is lower than the external supply voltage and is derived from the former as internal supply voltage, characterized by an active potential divider which supplies the internal supply voltage, comprising the following:
    - a first resistive potential divider with two ohmic resistors (R1, R2) connected in series and a center point (X) between the supply voltage connection (Pad) and the reference potential;
    - an impedance converter (T1) connected to the center point (X) of the first resistive potential divider;
    - a circuit for load-dependent control so that voltage at the center point (X) of the first resistive potential divider (R1, R2) will rise when the internal supply voltage decreases.
  2. A circuit according to claim 1, characterized in that the impedance converter is a drain-source path of a first MOSFET (T1) disposed between the supply voltage connection (Pad) and in internal supply voltage point of the second circuit parts, with the gate of the MOSFET being connected with center point (X) of the first resistive potential divider (R1, R2).
  3. A circuit according to claim 1 or 2, characterized in that the circuit for controlling the divided voltage at the tapping (X) of the first resistive voltage divider (R1, R2), so that voltage at the center point (X) of the first resistive potential divider (R1, R2) will rise when the internal supply voltage decreases, comprises the following:
    - a drain-source path of a second MOSFET (T1') disposed between the supply voltage connection (Pad) and the internal supply voltage point, with the gate of the MOSFET being connected to a tapping (X') of a second resistive potential divider (R1', R2') between the supply voltage connection (Pad) and the reference potential;
    - a third MOSFET (T2') which is disposed in the drain branch of the second MOSFET (T1') which forms a current mirror circuit with a fourth MOSFET (T2) disposed between the supply voltage connection (Pad) and the tapping (X) of the first resistive potential divider (R1, R2).
EP01121398A 2000-10-12 2001-09-06 Integrated circuit with parts supplied with a different supply voltage Expired - Lifetime EP1197825B1 (en)

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DE10050561A DE10050561B4 (en) 2000-10-12 2000-10-12 Integrated circuit with circuit parts with different supply voltage
DE10050561 2000-10-12

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EP1197825A2 EP1197825A2 (en) 2002-04-17
EP1197825A3 EP1197825A3 (en) 2004-07-07
EP1197825B1 true EP1197825B1 (en) 2009-05-27

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EP (1) EP1197825B1 (en)
JP (1) JP2002185302A (en)
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EP1197825A3 (en) 2004-07-07
US6605833B2 (en) 2003-08-12
DE10050561B4 (en) 2005-04-28
DE50114910D1 (en) 2009-07-09
EP1197825A2 (en) 2002-04-17
DE10050561A1 (en) 2002-05-16
US20020043670A1 (en) 2002-04-18
ATE432491T1 (en) 2009-06-15
JP2002185302A (en) 2002-06-28
HK1048671A1 (en) 2003-04-11

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