EP1160865A3 - Halbleiteranordnung mit optischer Fuse - Google Patents

Halbleiteranordnung mit optischer Fuse Download PDF

Info

Publication number
EP1160865A3
EP1160865A3 EP01112173A EP01112173A EP1160865A3 EP 1160865 A3 EP1160865 A3 EP 1160865A3 EP 01112173 A EP01112173 A EP 01112173A EP 01112173 A EP01112173 A EP 01112173A EP 1160865 A3 EP1160865 A3 EP 1160865A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
optical fuse
fuse
optical
packaging material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01112173A
Other languages
English (en)
French (fr)
Other versions
EP1160865A2 (de
Inventor
Alexander Benedix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1160865A2 publication Critical patent/EP1160865A2/de
Publication of EP1160865A3 publication Critical patent/EP1160865A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Fuses (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Die Erfindung betrifft eine Halbleiteranordnung, bei der das Verpackungsmaterial (1) aus einem Material besteht, das für Strahlungsenergie durchlässig ist, welche das Material von Fuses (2), die an das Verpackungsmaterial (1) angrenzen, absorbiert.
EP01112173A 2000-05-30 2001-05-17 Halbleiteranordnung mit optischer Fuse Withdrawn EP1160865A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10026926 2000-05-30
DE10026926A DE10026926C2 (de) 2000-05-30 2000-05-30 Halbleiteranordnung mit optischer Fuse

Publications (2)

Publication Number Publication Date
EP1160865A2 EP1160865A2 (de) 2001-12-05
EP1160865A3 true EP1160865A3 (de) 2004-01-28

Family

ID=7644191

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01112173A Withdrawn EP1160865A3 (de) 2000-05-30 2001-05-17 Halbleiteranordnung mit optischer Fuse

Country Status (6)

Country Link
US (1) US6483166B2 (de)
EP (1) EP1160865A3 (de)
JP (1) JP3905722B2 (de)
KR (1) KR100419540B1 (de)
DE (1) DE10026926C2 (de)
TW (1) TW494561B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003206805A (ja) 2002-01-17 2003-07-25 Nissan Motor Co Ltd エンジンの空燃比制御装置
US20050087836A1 (en) * 2003-10-22 2005-04-28 Taiwan Semiconductor Manufacturing Co. Electrically programmable polysilicon fuse with multiple level resistance and programming
JP5165925B2 (ja) * 2007-05-29 2013-03-21 セイコーインスツル株式会社 半導体装置
US8809165B2 (en) * 2012-08-27 2014-08-19 Infineon Technologies Ag Method for fusing a laser fuse and method for processing a wafer
US9814099B2 (en) 2013-08-02 2017-11-07 Applied Materials, Inc. Substrate support with surface feature for reduced reflection and manufacturing techniques for producing same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321300A (en) * 1990-05-08 1994-06-14 Kabushiki Kaisha Toshiba Laser-broken fuse
WO1999050912A1 (fr) * 1998-04-01 1999-10-07 Ricoh Company, Ltd. Dispositif semi-conducteur et sa fabrication
US6063651A (en) * 1998-02-03 2000-05-16 International Business Machines Corporation Method for activating fusible links on a circuit substrate
EP1037278A2 (de) * 1999-03-18 2000-09-20 Toshiba Corporation Halbleiterbauelementstruktur mit spezifisch dimensionierten Redundant-Schmelzsicherungen für Laser-Reparaturen

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09146056A (ja) * 1995-11-20 1997-06-06 Oki Electric Ind Co Ltd 光フューズ及び光素子保護装置
JP2866055B2 (ja) * 1996-05-20 1999-03-08 太陽誘電株式会社 光情報記録媒体の記録方法
KR100265969B1 (ko) * 1997-08-30 2000-09-15 김영환 레이저를이용한불량다이표시방법
US6130468A (en) * 1998-02-11 2000-10-10 Micron Technology, Inc. Fuse, memory incorporating same and method
US6033939A (en) * 1998-04-21 2000-03-07 International Business Machines Corporation Method for providing electrically fusible links in copper interconnection
JP4390297B2 (ja) * 1998-06-19 2009-12-24 株式会社ルネサステクノロジ 半導体装置
KR20000001014U (ko) * 1998-06-19 2000-01-15 김영환 이력표시부를 갖는 반도체장치
US6323534B1 (en) * 1999-04-16 2001-11-27 Micron Technology, Inc. Fuse for use in a semiconductor device
US6288436B1 (en) * 1999-07-27 2001-09-11 International Business Machines Corporation Mixed fuse technologies

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321300A (en) * 1990-05-08 1994-06-14 Kabushiki Kaisha Toshiba Laser-broken fuse
US6063651A (en) * 1998-02-03 2000-05-16 International Business Machines Corporation Method for activating fusible links on a circuit substrate
WO1999050912A1 (fr) * 1998-04-01 1999-10-07 Ricoh Company, Ltd. Dispositif semi-conducteur et sa fabrication
EP1069618A1 (de) * 1998-04-01 2001-01-17 Ricoh Company Halbleiteranordnung und verfahren zur herstellung
EP1037278A2 (de) * 1999-03-18 2000-09-20 Toshiba Corporation Halbleiterbauelementstruktur mit spezifisch dimensionierten Redundant-Schmelzsicherungen für Laser-Reparaturen

Also Published As

Publication number Publication date
TW494561B (en) 2002-07-11
DE10026926C2 (de) 2002-06-20
JP3905722B2 (ja) 2007-04-18
KR20010109173A (ko) 2001-12-08
JP2002008515A (ja) 2002-01-11
EP1160865A2 (de) 2001-12-05
US20020003278A1 (en) 2002-01-10
KR100419540B1 (ko) 2004-02-19
US6483166B2 (en) 2002-11-19
DE10026926A1 (de) 2001-12-13

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