EP1146732A1 - Photosignal-Spannungswandlerschaltung in Bildsensoren mit entfernten Integratoren - Google Patents

Photosignal-Spannungswandlerschaltung in Bildsensoren mit entfernten Integratoren Download PDF

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Publication number
EP1146732A1
EP1146732A1 EP01400894A EP01400894A EP1146732A1 EP 1146732 A1 EP1146732 A1 EP 1146732A1 EP 01400894 A EP01400894 A EP 01400894A EP 01400894 A EP01400894 A EP 01400894A EP 1146732 A1 EP1146732 A1 EP 1146732A1
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EP
European Patent Office
Prior art keywords
integrator
input
pel
bus
impedance matching
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Granted
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EP01400894A
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English (en)
French (fr)
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EP1146732B1 (de
Inventor
Philippe Pantigny
Patrick Audebert
Eric Mottin
Frédéric Rothan
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise

Definitions

  • image sensors There are currently several types of image sensors to convert electromagnetic radiation into electrical signals. Generally, image sensors have photodetectors that transform radiation electromagnetic in photosignals. These last are then transformed into electrical signals by means an integrated reading circuit (also called CIL), which includes analog and / or digital functions.
  • CIL integrated reading circuit
  • the photodetectors can be carried out within the integrated reading circuit; this is the case, in particular, when the photodetectors are produced by photodiodes or photogrids of transistors CMOS operating in the visible spectral band. That case is described in particular in the article entitled “Comparison of passive and active pixel schemmes for CMOS visible imagers ”from KOZLOWSKI, KLEINHANS and LIU, SPIE conference on infrared readout electronics IV, Orlando, Florida, April 1998.
  • Each ELP in the MP matrix provides, on the one hand, the coupling of the photodetector and, on the other hand, a first conversion of the photosignal into a quantity electric (current, charge or voltage).
  • each row of ELPs is connected at its end to processing means deported, referenced T.
  • This output fixture consists of a multiplexer M, generally of the type analog, which receives signals from each remote processing means and provides multiplexing of these signals. If the integrated CIL reading circuit has multiple PEL matrices, so the one or more multiplexer (s) M ensures (s) the multiplexing of outputs of all PEL matrices.
  • the multiplexer (s) is (are) itself (themselves) connected to one or more output amplifier (s) A.
  • the means of remote processing can be made from an integrator, i.e. an amplifier counter-reacted by a capacitor and a switch, which ensures the conversion into photosignal voltage delivered by the ELP either as a current or as a charge electric.
  • an integrator i.e. an amplifier counter-reacted by a capacitor and a switch, which ensures the conversion into photosignal voltage delivered by the ELP either as a current or as a charge electric.
  • the capacity brought back to the input of the integrator I, during the reading phase of each PEL, is then equal to the sum of the output capacity of the addressed PEL (denoted P1), of the output capacities of the unaddressed PELs. (denoted P2) and the capacity of the C x-bus connection used to ensure electrical continuity between the outputs of all the PELs and the input of the integrator I.
  • the output capacity of an addressed PEL corresponds to the capacity of the addressing switch in the closed state
  • the output capacity of an unaddressed PEL corresponds to the capacity of the addressing switch in the open state.
  • Vref is the voltage of reference of the DC voltage source, connected on the input e + of an amplifier A; e- is the entrance negative of amplifier A to which is connected the PEL bus (referenced Bpel); Cconv is the ability to conversion connected between the output s of amplifier A and the input e- of this amplifier; and Cbus_pel is the capacity of the PEL bus.
  • This expression shows the relationships between contributors to conversion noise and the sensitivity of conversion noise to these contributors.
  • the voltage response obtained at the output of the remote integrator. This is the case, for example, when we want to use a capacity of low value conversion to convert to voltage, optimally, a low-value photocharge, or when you want to integrate a photocurrent for a short time, or when you want integrate a low input current. It is also the case, when we want to reduce the requirements on the input noise from analog blocks located downstream deported integrator or increase immunity noise from the CIL output signal or reduce the complexity of the signal acquisition chains output, etc. In all these cases, the voltage response can be increased by decreasing the capacity of the conversion capacitor, but this induces, according to the explanations given above, an increase conversion noise.
  • the formula giving the spectral density V bs-conv shows that the noise of the reference voltage is amplified by an increasing function of the ratio Cbus_pel / Cconv.
  • Obtaining a low conversion noise transfers strong constraints on the production of the power supply when the Cbus_pel / Cconv ratio is unfavorable.
  • its “routing” must be subject to special precautions if one wishes to guarantee this noise level on the input e + of all the remote integrators of the integrated circuit of reading.
  • the object of the invention is to remedy the disadvantages of image sensors with integrators deportees, described above. To this end, she offers a device for converting a photosignal into voltage, usable in image sensors remote integrators and presenting a noise of reduced conversion.
  • the conversion noise can be reduced if you reduce significant the capacity brought back on the entry of the remote integrator, without altering the function of transfer of photosignal in tension. This is achieved by inserting, between the end of the PEL bus (used to multiplex the outputs of the elementary points of a same row) and the integrator input, a low capacity impedance matching device Release.
  • the invention relates a matrix read image sensor comprising an array of connected elementary photodetectors by at least one PEL bus to a remote integrator converting the signal from each photodetector elementary in tension, characterized in that it between the end of the PEL bus and the entrance to the integrator, an impedance matching device to low output capacity, delivering at its output, during the conversion time of a signal from photodetector, a charge variation which corresponds to an affine function (i.e. a variation monotonic of the input function) of the load present at the entrance of said adaptation device.
  • an affine function i.e. a variation monotonic of the input function
  • the load variation can be determined by: where Iinj is the instantaneous current of the bus injected at the input of the adaptation device, Iint is the instantaneous current at the output of the adaptation device and Tconv is the conversion time.
  • the adaptation device impedance is connected as close as possible to the input of the integrator.
  • the adaptation device impedance is a gate-mounted TMOS transistor common on the input of the integrator.
  • the impedance matching device has a common gate TMOS transistor associated with a feedback amplifier.
  • the impedance matching device has two transistors and two mirrored voltage sources current.
  • the invention relates to an image sensor with remote integrator, in which the conversion noise is reduced.
  • This reduction in conversion noise is obtained by inserting, between the end of the PEL bus and the input of the remote integrator, a device impedance matching of low output capacity, which significantly reduces the capacity brought to the input of the remote integrator, without altering the photosignal transfer function by voltage.
  • the invention therefore proposes to select a impedance matching device which respects the conservation of the charge between its entry and exit so as not to alter the conversion process, by voltage, photosignal delivered by the ELP.
  • any adaptation device impedance can be used as soon as it has a low output capacity, and that it delivers, on its electrical output node, for a time Tconv equal to the duration of the conversion from photosignal to voltage, a charge variation strictly equal to the one developed on its input node.
  • This charge variation is an affine function of the charge variation injected at its input; it is given by the expression: where Iint (t) is the instantaneous current at the input of the integrator.
  • FIG 4 there is shown schematically the integrated circuit for reading a image sensor with remote integrator, according to the invention.
  • the elementary points have been referenced P and the bus PEL connecting each row of elementary points P is referenced Bpel.
  • This Bpel bus is connected to one of its ends (hereinafter called "end"), at an impedance matching device D, itself connected to the input of an integrator I.
  • the integrator I can be the same as that used in the prior art and shown in the figure 3.
  • the impedance matching device D can be carried out according to several embodiments different.
  • the impedance matching device is made by a TMOS transistor mounted in common gate on the integrator. This embodiment is shown in Figure 5.
  • the TMOS transistor T is referenced T with its gate g T , its source s T , and its drain d T.
  • the source s T of transistor T is connected to the end of the PEL bus;
  • the drain d T of the transitor T is connected to the input e- of the amplifier A, in other words, to the input of the integrator I;
  • the gate g T of the transistor T is connected to a voltage source Vg.
  • the transistor T can be an NMOS transistor, especially if we want integrate the photocurrent delivered by photodiodes of type N on a substrate P or even of a resistive microbolometer.
  • the transistor T can be of the PMOS type in order to process the photocurrent delivered by P-type photodiodes on an N substrate or even a microbolometer resistive.
  • Amplifier A shown in this Figure 5, has a differential input (e-; e +); however, the invention can be used with other types of charge amplifier.
  • the quiescent point of transistor T is adjusted so that it delivers, at the input of amplifier A, that is to say on its drain d T , a current equal to the current Iinj injected into its source s T , by bus Bpel.
  • the potential of the drain d T of the transistor is equal to Vref, which is the virtual mass of the differential amplifier A.
  • the voltage applied to the gate of the transistor T is adjusted so that the transistor is in saturation mode.
  • the transistor T thus has a very high drain-source resistance; moreover, its drain current d T is then equal to the current injected into the source s T of the transistor.
  • the output capacity of the transistor T is equal to the sum of the capacitance gate-drain of a TMOS transistor, in saturation and the capacity of its drain junction. This capacity is of the order of magnitude of the output capacity of a single PEL. So she is very less than the capacity of the PEL bus.
  • the voltages Vg and Vref are optimized, in order to ensure a functioning in regime of saturation throughout the current entry excursion, because the potential of the PEL bus must be able to vary, so that the transistor T can develop a voltage source grid compatible with current intensity injected. In this way, the voltage response of the integrator I, associated with the adaptation device impedance D, has a constant current attack on the bus ELP identical to that of a remote integrator classic.
  • the curve Id T -s T shows the drain-source current of the transistor T; the values Iinj-max and Iinj-min are, respectively, the maximum and minimum values of the current injected on the source s T of transistor T, and the value V T represents the threshold voltage of transistor T.
  • the ELPs of a sensor deliver photosignals whose levels vary independently of each others because the pixels of the image to which they are associates are generally not correlated. It is necessary therefore that, in the device of the invention, the response from the integrator to an amplitude current pulse and of variable duration is identical to that of a classic remote integrator. To show that is the case we have shown in figure 7 different responses from the integrator.
  • Part A of FIG. 7 shows the response of the integrator to the injection of a current step Iinj (I1, I2) on the bus PEL.
  • Part B of Figure 7 shows that we obtain, either by solving the KIRCHOFF equations, or by performing appropriate electrical simulations, that the current Iint injected into the integrator follows the variation of the current Iinj with a response time finished.
  • Part C of FIG. 7 shows the temporal evolution of the potential of the bus PEL between these two asymptotic values V1 and V2 which are determined by means of the current-voltage characteristic of FIG. 6.
  • the time constant ⁇ which governs this transient regime, is given by the formula: ⁇ ⁇ gm / Cbus_pel, where gm is the transductance of transistor T.
  • the device the invention does not allow delivery at all times t an output current equal to its input current, it retains the charge between its entry and exit, from when the conversion time is greater than the time response of the device and that the induced variation on the PEL bus by the current pulse delivered by each ELP does not pass the junctions which it has connected in reverse.
  • the output capacity of this device is very lower than that of the PEL bus, of an integrated circuit of read in a matrix sensor.
  • the adaptation device impedance achieved by a mounted TMOS transistor in common grid therefore meets the characteristics previously stated and necessary for a good operation of an image sensor, namely a low output capacity and delivery on its output node of a load variation strictly equal to that developed at the place of entry.
  • the order of magnitude of Cbus_pel is 2.0 pF and that of Cconv is approximately 0.1 pF.
  • the capacity C less can be reduced to 0.1 pF.
  • the invention therefore makes it possible to reduce significantly the conversion noise in the white noise.
  • the impedance matching device can be produced according to other embodiments.
  • it can be achieved by means of a TMOS transistor with a common gate, with a feedback amplifier.
  • a feedback amplifier it is possible to further improve certain characteristics of the first embodiment by counter-reacting the source of the transistor T with an amplifier G.
  • the amplifier G is mounted between the gate g T of the transistor T and the source s T of transistor T, as shown in Figure 8.
  • the introduction of this feedback has the effect of increasing the input transconductance of transistor T, which results in a reduction of the response time to one step current.
  • Such a device can be used, for example example, in integrated reading circuits where the conversion time requirements (i.e. reading time of the information delivered on an ELP) and the voltage response of the remote integrator require reducing the response time of the impedance matching device D located upstream of the integrator.
  • the conversion time requirements i.e. reading time of the information delivered on an ELP
  • the voltage response of the remote integrator require reducing the response time of the impedance matching device D located upstream of the integrator.
  • the impedance matching device can also be realized by means of a current mirror, as shown in figure 9.
  • the impedance matching device D is produced by means of two transistors T1 and T2, each associated with a voltage source V1 and V2 and connected to each other by their gate g T so as to produce a current mirror.
  • the device of the invention delivers at output a current Iint which is equal to its input current Iinj multiplied by an amplification factor which is a function of the geometry ratio of the TMOS transistors T1 and T2 and of the voltages V1 and V2 .
  • the current gain may be less than or greater than unity.
  • the device of the invention produced according to this embodiment can be used in applications where it is necessary to crop the current delivered by the PEL bus in the excursion charge amplifier input.
  • the image sensor of the invention allows therefore to obtain a conversion noise lower than that of a classic sensor.
  • the dynamics of inflow of the sensor is thus increased, the noise reduced to the input of the integrated reading circuit being decreased.
  • the device of the invention allows, more, to get a better voltage response to the remote integrator output, reducing the converting capacity and decreasing noise by conversion.
  • CIL CIL-in-dielectric-in-dielectric-in-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dielectric-dos, thermosensors, including microbolometers resistive to bashing in remote current.
  • devices impedance matching according to the invention can also be associated with deported integrators multi-fiber (charge amplifiers with several capacitors selectable in its loop feedback), in order to convert adapted to the level of the input photosignal.
  • deported integrators multi-fiber charge amplifiers with several capacitors selectable in its loop feedback
  • the device of the invention can accommodate a level noise on the reference voltage Vref greater than that of a classic integrator. In these same conditions it can also accommodate a level charge amplifier input noise higher than that of a traditional remote integrator.
  • the conversion noise is no longer a function the capacity of the PEL bus. It is therefore possible increase this capacity without increasing the noise of conversion. This opens up many possibilities, such as increasing the format of the sensor, increasing the pace of the ELP, the possibility increase the number of multiplexed rows towards a same integrator, increasing the complexity of the PEL or the increase in the number of entries and out of the ELP.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Amplifiers (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
EP01400894A 2000-04-10 2001-04-06 Photosignal-Spannungswandlerschaltung in Bildsensoren mit entfernten Integratoren Expired - Lifetime EP1146732B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0004562 2000-04-10
FR0004562A FR2807601B1 (fr) 2000-04-10 2000-04-10 Dispositif de conversion d'un photosignal en tension dans les senseurs d'images a integrateurs deportes

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EP1146732A1 true EP1146732A1 (de) 2001-10-17
EP1146732B1 EP1146732B1 (de) 2009-10-21

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EP (1) EP1146732B1 (de)
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Publication number Priority date Publication date Assignee Title
EP2031452B1 (de) * 2007-08-27 2017-10-11 Xeikon Manufacturing Zweikomponenten-Toner mit zwei Walzen
KR101513373B1 (ko) * 2013-12-31 2015-04-20 한양대학교 산학협력단 직류 오프셋을 보상하는 광통신 수신기
US10448053B2 (en) * 2016-02-15 2019-10-15 Qualcomm Incorporated Multi-pass non-separable transforms for video coding

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149256A (ja) * 1985-09-19 1987-07-03 Seiko Epson Corp イメ−ジセンサ信号読出回路
JPS62292081A (ja) * 1986-06-12 1987-12-18 Seiko Epson Corp イメ−ジセンサ信号続出回路
FR2736782A1 (fr) * 1995-04-07 1997-01-17 Commissariat Energie Atomique Dispositif et procede de lecture d'une matrice de detecteurs photoniques

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2735632B1 (fr) * 1995-06-14 1997-07-11 Commissariat Energie Atomique Dispositif et procede de numerisation pour detecteurs photosensibles et procede de lecture d'une matrice de detecteurs photoniques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149256A (ja) * 1985-09-19 1987-07-03 Seiko Epson Corp イメ−ジセンサ信号読出回路
JPS62292081A (ja) * 1986-06-12 1987-12-18 Seiko Epson Corp イメ−ジセンサ信号続出回路
FR2736782A1 (fr) * 1995-04-07 1997-01-17 Commissariat Energie Atomique Dispositif et procede de lecture d'une matrice de detecteurs photoniques

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACT OF JAPAN, vol. 012, no. 189, 2 June 1988 (1988-06-02), pages E-616
PATENT ABSTRACTS OF JAPAN vol. 011, no. 384 (E - 565) 15 December 1987 (1987-12-15) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 189 (E - 616) 2 June 1988 (1988-06-02) *

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Publication number Publication date
DE60140230D1 (de) 2009-12-03
US20010048065A1 (en) 2001-12-06
US7060956B2 (en) 2006-06-13
EP1146732B1 (de) 2009-10-21
FR2807601A1 (fr) 2001-10-12
FR2807601B1 (fr) 2002-09-20

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