EP1102148B1 - Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung - Google Patents

Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung Download PDF

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Publication number
EP1102148B1
EP1102148B1 EP00403128A EP00403128A EP1102148B1 EP 1102148 B1 EP1102148 B1 EP 1102148B1 EP 00403128 A EP00403128 A EP 00403128A EP 00403128 A EP00403128 A EP 00403128A EP 1102148 B1 EP1102148 B1 EP 1102148B1
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EP
European Patent Office
Prior art keywords
voltage
resistor
low temperature
generator
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP00403128A
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English (en)
French (fr)
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EP1102148A1 (de
Inventor
Paolo Migliavacca
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STMicroelectronics SA
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STMicroelectronics SA
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Definitions

  • a “band gap” generator is illustrated by US 5,291,122. It includes in series with a transistor Q1 whose collector is connected to an input of an amplifier 2 and whose base is connected to the output 4 of the amplifier, a set of resistors with resistance R2 down temperature coefficient connected in series with a parallel assembly having a low resistance R4 temperature coefficient and a resistance R3 to high temperature coefficient. Another transistor Q2 has the same editing except that it is connected to the other input of amplifier 2.
  • V OUT V REF .
  • R 1 + R 2 R 2 is
  • the reference voltage generator 10 can be adjusted so that the voltage V REF is substantially constant with the temperature in a fairly wide temperature range. However, it is observed that the value V REF of the reference voltage has a linearity defect due to a second-order term of development in temperature, which is characterized by a temperature behavior called "bell".
  • the object of the invention is to propose a voltage generator device for which the fault linearity of the second order mentioned above is corrected, especially at low temperatures.
  • the serial element with the first resistance may be a passive element, such as example, a second resistor presenting a temperature coefficient different from that of the first resistance.
  • the divisor of voltage may also include at least one active element whose characteristic with the temperature is different from that of resistance.
  • the divider of voltage produces a feedback voltage that varies with the temperature and which allows to correct partially or totally the behavior in "Bell" of the reference generator.
  • the value of the first resistance of the divisor, as well as the characteristics of the reference voltage generator can be adjusted from such as to obtain an optimal correction.
  • the first resistance of the divider voltage can present a value that is adjusted in function of the second-order fault of the generator of reference voltage, so as to obtain at the terminal of output, a quasi-constant voltage with the temperature (only the third order remains).
  • this may include one or more bipolar transistors.
  • the transistors are then connected in series with the first resistance of the voltage divider by the collector and transmitter terminals. They are by elsewhere polarized to operate in saturated mode for temperatures greater than or equal to temperatures in the low temperature range.
  • the active element may have several transistors in chain or in parallel, the following description refers, for reasons of simplification, to only one of these transistors.
  • the non-linear temperature character of the bipolar transistor is due to the fact that bipolar transistor fed to collector current constant has a higher saturation when its operating temperature is higher.
  • the transistor can be polarized so as to be at the limit of the regime of saturation in the low temperature range, and way to be highly saturated when the temperature is above the low temperature range.
  • the polarization of the bipolar transistor can use, for example, a power source, which is connected to its base and which fixes its point of operation.
  • Figure 3 shows in a simplified way the main elements of a device generating constant voltage according to the invention.
  • the divider bridge 130 always has a first resistor 132 that connects the ground terminal 122 to the inverting input 124 of the amplifier 126.
  • the first resistance is however connected in a node 134 to an element 150; in series between the output terminal 128 and the ground terminal 122.
  • the element 150 presents an impedance with an addictive behavior in temperature different from that of the first resistance.
  • the impedance of the element 150 is denoted R X and the voltage at its terminals is denoted V X.
  • V OUT V REF + V X is
  • the value R X decreases less rapidly than the value R 1 when the temperature decreases.
  • the voltage V X provided by the elements R X and R 1 against reaction tends to decrease less rapidly when the temperature decreases, and in particular in a low temperature range, as will appear later in the description.
  • FIG. 4 indicates in arbitrary scale, and as a function of temperature, the output voltage V OUT delivered by the device of FIG. 3 at its output terminal 128.
  • the output voltage is indicated by a solid line.
  • variations of the voltage V OUT for a temperature excursion between -40 ° C. and 85 ° C. is of the order of 3 mV with a device of the prior art according to FIG.
  • V OUT can be limited to 1.5 mV with the device of the invention according to Figure 3, for the same nominal value of the output voltage.
  • Amplifier 226 is simply indicated with a transistor 227 which forms the output stage.
  • the input stage of the amplifier is formed by an input transistor 211 which is common to amplification and to a voltage generator of reference 210.
  • the reference voltage generator comprises a voltage generator 212 delivering a voltage denoted ⁇ V BE , and across which is connected a first resistor 213, referred to as reference, and having a value R B.
  • the voltage generator 212 is not described here in detail since its structure is in itself known in the state of the art. We can refer, for example, to the document (1) referred to in the introductory part of the description.
  • the generator 212 and the first reference resistor 213 are in series with a second reference resistor 214, of value R A and an adjustable resistor 215 of value R C.
  • the resistors are connected between the emitter of the input transistor 211 and the ground terminal 222.
  • the assembly formed by the generator of voltage 212, the resistors 213, 214, 215 and the transistor 211 form a band-gap generator.
  • V REF V BE211 + ⁇ V BE .
  • R AT + R B + R VS R B R AT + R B + R VS R B .
  • V BE211 is the base-emitter voltage of the input transistor 211.
  • the voltage V REF is therefore entirely defined by the bias of the input transistor 211 which depends on the values of ⁇ V BE , R A , R B and R C.
  • the temperature behavior of V REF can be modified by adjusting the R C value of the adjustable resistor 215.
  • the behavior is substantially linear, with linearity defects close ("bell").
  • Reference 229 generally refers to a feedback loop that connects the terminal of output 218 of the amplifier 226 to an input terminal 224 constituted by the base of the input transistor 211.
  • the feedback loop 229 includes a voltage divider 230 with a resistor 232 in series with a bipolar transistor 250 which constitutes here an active element with dependence coefficients in different from those of resistance 232.
  • the emitter of the transistor 250 is connected to the output terminal 218 and its collector is connected to the resistor 232 via a node 234, connected to the input 224 of the amplifier 226.
  • the resistor 232 connects node 234 to the ground terminal 222.
  • a current source 260 built around four transistors 261, 262, 263, 264 and of a resistor 265, is powered between the terminal of output 218 and the ground terminal.
  • the power source 260 is connected to the base of the bipolar transistor 250 according to a current mirror type mounting which allows to set a determined base current. This current is set to run the transistor 250 in regime saturated.
  • V CE of the transistor is illustrated by the parts A and B of FIG. 6, described hereinafter.
  • Part A indicates on the ordinate the values of the collector current of the transistor 250, the voltage divider, expressed in 10 -6 amps, as a function of the emitter-collector voltage (V EC ) expressed in volts.
  • curves 301, 302, 303 are represented and correspond respectively to the characteristic of transistor 250 for temperatures of -60 ° C, + 50 ° C and + 160 ° C.
  • Operating points are set by the basic current of the transistor, so that the operating point 311 at a temperature of -60 ° C is at the limit of the saturation zone of the transistor 250. Other operating points, corresponding at higher temperatures, are in areas of high saturation of the transistor.
  • Part B of FIG. 6 shows the evolution of the emitter-collector voltage (V EC ) of transistor 250 as a function of temperature.
  • the scale of the voltages of the part B is identical to that of the part A and the voltages corresponding to the points of operation 311, 312 and 313 are reported there.
  • Part B of Figure 6 allows to put highlight the non-linear evolution of the voltage at terminals of transistor 250 as a function of temperature, for a constant current in first approximation.
  • This non-linear evolution is set profit, thanks to the invention to correct the defect of second-order linearity (that is, the second order of development in temperature) of the generator of reference voltage 210.
  • This correction can be finely adjusted by modifying the values R 1 and R C of the first resistor in the voltage divider and in the reference voltage generator.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)

Claims (7)

  1. Vorrichtung zum Erzeugen einer korrigierten Spannung in einem zwischen -60°C und +25°C liegenden Niedertemperaturbereich, mit:
    einem Bezugsspannungsgenerator (110,210), der in dem Niedertemperaturbereich einen Linearitätsmangel aufweist,
    einem Verstärker (126,226), der zwischen den Bezugsspannungsgenerator und eine Ausgangsklemme (128,228) geschaltet ist,
    einem Spannungsteiler, der mindestens einen ersten, in Reihe mit einem Element (150,250) geschalteten Widerstand (132,232) aufweist, wobei der Teiler mit einem Eingang des Verstärkers verbunden ist,
       dadurch gekennzeichnet, dass der Spannungsteiler zwischen der Ausgangsklemme (128,228) und einer Masseklemme (122,222) angebracht ist, um dem Verstärker eine Gegenreaktionsspannung zu liefern, dass das Element zumindest in dem Niedertemperaturbereich eine Impedanz mit einem temperaturabhängigen Verhalten aufweist, das sich von demjenigen des ersten Widerstands so unterscheidet, dass in dem Niedertemperaturbereich eine schwächere Gegenreaktion erfolgt.
  2. Vorrichtung nach Anspruch 1, wobei das Element (150) ein zweiter Widerstand mit einem von dem ersten Widerstand unterschiedlichen Temperaturkoeffizienten ist.
  3. Vorrichtung nach Anspruch 1, wobei das Element (250) zumindest in dem Niedertemperaturbereich ein Spannungsverhalten zeigt, das nicht-linear zu der Temperatur ist.
  4. Vorrichtung nach Anspruch 1, wobei der erste Widerstand (132,232) des Spannungsteilers einen Wert aufweist, der in Abhängigkeit von dem Linearitätsmangel des Bezugsspannungsgenerators (110,210) derart angepasst ist, dass an der Ausgangsklemme eine Spannung erhalten wird, die im wesentlichen linear zu der Temperatur ist.
  5. Vorrichtung nach Anspruch 4, wobei der Generator (210) vom "Band-Gap"-Typ eine Spannung liefert, die im wesentlichen linear zu der Temperatur ist.
  6. Vorrichtung nach Anspruch 3, wobei das aktive Element (250) mindestens einen bipolaren Transistor umfasst, der in Reihe mit dem ersten Widerstand des Spannungsteilers über seine Kollektor- und Emitteranschlüsse verbunden ist, wobei der Transistor bei Temperaturen, die höher oder gleich den Temperaturen des Niedertemperaturbereichs sind, im gesättigten Zustand arbeitet.
  7. Vorrichtung nach Anspruch 6, mit einer Stromquelle (260), die mit der Basis des bipolaren Transistors verbunden ist, um einen Funktionspunkt des Transistors festzulegen.
EP00403128A 1999-11-15 2000-11-10 Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung Expired - Lifetime EP1102148B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9914284 1999-11-15
FR9914284A FR2801116B1 (fr) 1999-11-15 1999-11-15 Dispositif generateur de tension corrige a basse temperature

Publications (2)

Publication Number Publication Date
EP1102148A1 EP1102148A1 (de) 2001-05-23
EP1102148B1 true EP1102148B1 (de) 2005-05-04

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EP00403128A Expired - Lifetime EP1102148B1 (de) 1999-11-15 2000-11-10 Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung

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US (1) US6407638B1 (de)
EP (1) EP1102148B1 (de)
DE (1) DE60019878T2 (de)
FR (1) FR2801116B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1501001A1 (de) * 2003-07-22 2005-01-26 STMicroelectronics Limited Vorspannungsschaltung
US8315588B2 (en) * 2004-04-30 2012-11-20 Lsi Corporation Resistive voltage-down regulator for integrated circuit receivers
US7176750B2 (en) * 2004-08-23 2007-02-13 Atmel Corporation Method and apparatus for fast power-on of the band-gap reference
US7417459B2 (en) * 2005-04-06 2008-08-26 Intel Corporation On-die offset reference circuit block

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190796A (en) * 1977-06-02 1980-02-26 Tokyo Shibaura Electric Company, Limited Pressure detecting apparatus having linear output characteristic
DE3171674D1 (en) * 1980-04-28 1985-09-12 Fujitsu Ltd Temperature compensating voltage generator circuit
US4939442A (en) * 1989-03-30 1990-07-03 Texas Instruments Incorporated Bandgap voltage reference and method with further temperature correction
US5359233A (en) * 1990-09-28 1994-10-25 Dallas Semiconductor Corporation Reset monitor for detection of power failure and external reset
US5373226A (en) * 1991-11-15 1994-12-13 Nec Corporation Constant voltage circuit formed of FETs and reference voltage generating circuit to be used therefor
US5304918A (en) * 1992-01-22 1994-04-19 Samsung Semiconductor, Inc. Reference circuit for high speed integrated circuits
US5291122A (en) * 1992-06-11 1994-03-01 Analog Devices, Inc. Bandgap voltage reference circuit and method with low TCR resistor in parallel with high TCR and in series with low TCR portions of tail resistor
US5668467A (en) * 1995-02-17 1997-09-16 National Semiconductor Corporation Current regulator having start-up circuitry which is turned off after start-up
FR2767207B1 (fr) 1997-08-11 2001-11-02 Sgs Thomson Microelectronics Dispositif generateur de tension constante utilisant les proprietes de dependance en temperature de semi-conducteurs
US6150872A (en) * 1998-08-28 2000-11-21 Lucent Technologies Inc. CMOS bandgap voltage reference
US6121824A (en) * 1998-12-30 2000-09-19 Ion E. Opris Series resistance compensation in translinear circuits

Also Published As

Publication number Publication date
DE60019878T2 (de) 2006-02-16
US6407638B1 (en) 2002-06-18
FR2801116A1 (fr) 2001-05-18
DE60019878D1 (de) 2005-06-09
FR2801116B1 (fr) 2002-01-25
EP1102148A1 (de) 2001-05-23

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