EP1102148A1 - Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung - Google Patents

Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung Download PDF

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Publication number
EP1102148A1
EP1102148A1 EP00403128A EP00403128A EP1102148A1 EP 1102148 A1 EP1102148 A1 EP 1102148A1 EP 00403128 A EP00403128 A EP 00403128A EP 00403128 A EP00403128 A EP 00403128A EP 1102148 A1 EP1102148 A1 EP 1102148A1
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EP
European Patent Office
Prior art keywords
voltage
temperature
generator
resistance
low temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00403128A
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English (en)
French (fr)
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EP1102148B1 (de
Inventor
Paolo Migliavacca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
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STMicroelectronics SA
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Publication of EP1102148A1 publication Critical patent/EP1102148A1/de
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Definitions

  • the present invention relates to a constant voltage generator device, corrected to low temperature, and more particularly such device including a voltage generator "band-gap" type reference.
  • Band-bap generator means »A generator with a voltage appreciably linear, and in particular constant with the temperature. Such a generator takes advantage of a temperature dependence of the voltage existing at terminals of one or more junctions of semiconductors.
  • band-gap comes from the fact that this voltage is a function of the width of the band gap of the semiconductor (s).
  • the device of the invention finds applications in the fields of microelectronics and integrated electronics.
  • the device of the invention can be used as setpoint voltage generator for a converter analog-digital or for supervisory systems supply voltage and batteries.
  • Reference voltage generators and in particular, band-gap generators are only generally not able to deliver currents strong. Therefore, these generators are often associated to an amplifier, from. way to form a device capable of supplying greater current at voltage constant.
  • reference 10 designates a band-gap reference voltage generator " The detailed description of such a generator is not given here since such generators are well known per se. We can for illustrative purposes, for example, document (1), from the same inventor, whose reference is specified at the end of the description.
  • the reference voltage generator 10 is connected between a ground terminal 22 and an input of an amplifier.
  • the amplifier 10 is connected to a non-inverting input 24+ of an operational amplifier 26.
  • V REF the voltage delivered by the reference voltage generator
  • the voltage delivered by the complete constant voltage generator device is available at an output terminal 28 of the amplifier and is denoted V OUT .
  • a divider bridge 30 is formed of a first resistor 31 of value R 1 in series with a second resistor 32 of value R2. It is connected between the output terminal 18 and the ground terminal 22. A node 34, between the first and second resistance is connected to the non-inverting input 24- of the amplifier 26, to deliver the voltage divided therein as that feedback voltage.
  • V OUT V REF .
  • R 1 + R 2 R 2 is
  • the reference voltage generator 10 can be adjusted so that the voltage V REF is substantially constant with the temperature in a fairly wide temperature range. However, it is observed that the value V REF of the reference voltage presents a linearity defect due to a second order term of the development in temperature, which is characterized by a behavior in temperature known as “in bell”.
  • FIG. 2 indicates, on an arbitrary scale, the value of the voltage V REF , on the ordinate, as a function of the temperature, plotted on the abscissa.
  • Figure 2 also shows the value of the output voltage V OUT of the complete device. This reproduces, to within a translation, the bell behavior of the voltage V REF . This behavior of the output voltage V OUT can be explained by the identical evolution with the temperature of the first and second resistors which have substantially the same temperature coefficients. In other words, the ratio R 2 / R 1 in equation (1) remains constant whatever the temperature.
  • V REF reference voltage generator
  • V OUT output voltage
  • the object of the invention is to provide a voltage generator device for which the fault second order linearity discussed above is corrected, especially at low temperature.
  • the divider of voltage includes at least a first resistance in series with an element presenting, at least in said low temperature range, impedance with a temperature dependence behavior different from that of the first resistance, so as to provide a weaker feedback in said range of low temperatures, and stronger feedback outside of said range.
  • the element in series with the first resistance can be a passive element, such as, for example, a second resistor having a temperature coefficient different from that of the first resistance.
  • the divisor of voltage can also include at least one active element whose characteristic with temperature is different from that of resistance.
  • the divider of voltage produces a feedback voltage which varies with temperature and which corrects partially or totally the behavior in "Bell" of the reference generator.
  • the value of the first resistance of the divider, as well as the characteristics of the reference voltage generator can be adjusted from so as to obtain an optimal correction.
  • the slope, and therefore the term of the first order of temperature dependence of the reference voltage delivered by the generator reference voltage can be adjusted in such a way so that the reference voltage is constant with temperature, to the linearity errors of the second and third orders close.
  • the first resistance of the divider of voltage can have a value which is adjusted in second order fault function of the generator reference voltage, so as to obtain at the terminal of output, a voltage almost constant with temperature (only the third order remains).
  • this may include one or more bipolar transistors.
  • the transistors are then connected in series with the first resistance of the voltage divider by the collector and transmitter terminals. They are by elsewhere polarized to operate in saturated mode for temperatures greater than or equal to temperatures in the low temperature range.
  • the active element may include several transistors in chain or in parallel, the description which follows refers, for reasons of simplification, to only one of these transistors.
  • the non-linear temperature character of the bipolar transistor is due to the fact that a bipolar transistor supplied with collector current constant exhibits higher saturation when its operating temperature is higher.
  • the transistor can be polarized so as to be at the limit of the regime of saturation in the low temperature range, and so as to be highly saturated when the temperature is above the low temperature range.
  • the range of low temperatures considered is, for example, between -60 ° C and + 25 ° C. Other temperature ranges can be taken into account by correspondingly modifying the transistor bias.
  • the polarization of the bipolar transistor can use, for example, a power source, which is connected to its base and which fixes its point of operation.
  • Figure 1 already described, is a simplified schematic representation of a device known type voltage generator.
  • Figure 2 already described, is a graph indicating in arbitrary scale, the evolution of the voltage delivered by a voltage generator reference and by the complete device of FIG. 1, depending on the temperature.
  • Figure 3 is a representation amplified schematic of a generator device voltage according to the invention.
  • Figure 4 is a graph showing, in arbitrary scale, the evolution of the voltage delivered by the device of figure 3.
  • Figure 5 is a representation simplified diagram of a particular embodiment of the device of the invention.
  • Part A of Figure 6 is a graph indicating, for different temperatures, the characteristics of the collector current as a function of an emitter-collector voltage of a transistor bipolar used in the device of figure 5.
  • Part B of Figure 6 is a graph indicating variations in emitter-collector voltage of the bipolar transistor of FIG. 5, in depending on its operating temperature.
  • Figure 3 shows in a simplified way the main elements of a generator device constant voltage according to the invention.
  • the divider bridge 130 always includes a first resistor 132 which connects the earth terminal 122 at the inverting input 124 of amplifier 126.
  • the first resistance is however connected in a node 134 to an element 150; in series between output terminal 128 and ground terminal 122.
  • the element 150 has an impedance with a dependency behavior in temperature different from that of the first resistance.
  • the impedance of the element 150 is denoted R X and the voltage across its terminals is denoted V X.
  • V OUT V REF + V X is
  • the value R X decreases less quickly than the value R 1 when the temperature decreases.
  • the voltage V X provided by the elements R X and R 1 against feedback thus tends to decrease less rapidly when the temperature decreases, and in particular in a range of low temperatures, as will appear later in the description.
  • the compensation can be adjusted as a function of the reference generator 110, in particular by modifying the value R 1 of the first resistor 132.
  • the reference voltage VREF (element 110) developed in temperature, has a first order term and a second order term. The same applies to the voltage V X due to the ratio R X / R 1 .
  • R 1 By acting on R 1 , it is possible to modify the coefficients of the first and second orders (sets) of V X so as to compensate for, or even cancel, the second order term of V REF . (By acting on the adjustable resistor 215 of FIG. 5 described later, it is possible to act only on the first order of V REF to compensate for the first order found of V X ).
  • Figure 4 indicates in arbitrary scale, and depending on the temperature, the output voltage V OUT delivered by the device of Figure 3 at its output terminal 128.
  • the output voltage is indicated by a solid line.
  • the the invention makes it possible to maintain a tension substantially constant over a range of temperatures low, by correcting, for these temperatures, the “bell-shaped” behavior, highlighted in the figure 2.
  • V OUT variations in the voltage V OUT for a temperature excursion between -40 ° C and 85 ° C is of the order of 3 mV with a device of the prior art conforming to FIG. 1.
  • This variation of V OUT can be limited to 1.5 mV with the device of the invention according to FIG. 3, for the same nominal value of the output voltage.
  • Figure 5 described below corresponds to a particular embodiment of the device of the figure 3, in which a non-linear element is formed for essentially by a bipolar pnp transistor.
  • the amplifier 226 is simply indicated with a transistor 227 which forms the output stage thereof.
  • the amplifier input stage is formed by an input transistor 211 which is common to amplification and a voltage generator of reference 210.
  • the reference voltage generator comprises a voltage generator 212 delivering a voltage denoted ⁇ V BE , and at the terminals of which is connected a first resistor 213, called the reference, and having a value R B.
  • the voltage generator 212 is not described here in detail since its structure is in itself known in the state of the art. We can refer, for example, to the document (1) mentioned in the introductory part of the description.
  • the generator 212 and the first reference resistance 213 are in series with a second reference resistance 214, of value R A and an adjustable resistance 215 of value R C.
  • the resistors are connected between the emitter of the input transistor 211 and the ground terminal 222.
  • the assembly formed by the generator voltage 212, resistors 213, 214, 215 and the transistor 211 form a generator of "band-gap" type.
  • V REF V BE211 + ⁇ V BE .
  • R AT + R B + R VS R B R AT + R B + R VS R B .
  • V BE211 is the base-emitter voltage of the input transistor 211.
  • the voltage V REF is therefore entirely defined by the polarization of the input transistor 211 which depends on the values of ⁇ V BE , R A , R B and R C.
  • V REF The behavior in temperature of V REF can be modified by adjusting the value R C of the adjustable resistor 215.
  • the behavior is appreciably linear, except for linearity faults (“in bell”).
  • Reference 229 generally designates a feedback loop which connects the terminal of output 218 of amplifier 226 to an input terminal 214 formed by the base of the input transistor 211.
  • the feedback loop 229 includes a voltage divider 230 with a resistor 232 in series with a bipolar transistor 250 which constitutes here an active element with dependence coefficients in temperature different from that of resistance 232.
  • the emitter of transistor 250 is connected to the output terminal 218 and its collector is connected to the resistor 232 via a node 234, connected to input 214 of amplifier 226.
  • the resistor 232 connects node 234 to ground terminal 222.
  • a power source 260 built around four transistors 261, 262, 263, 264 and from a resistor 265, is supplied between the terminal of output 218 and the earth terminal.
  • the current source 260 is connected to the base of the bipolar transistor 250 according to a current mirror type assembly which allows to set a determined base current. This current is fixed to operate transistor 250 under regime saturated.
  • V CE of the transistor is illustrated by parts A and B of FIG. 6, described below.
  • Part A indicates on the ordinate the values of the collector current of the transistor 250, of the voltage divider, expressed in 10 -6 Amps, as a function of the emitter-collector voltage (V EC ) expressed in Volt.
  • curves 301, 302, 303 are represented and correspond respectively to the characteristic of transistor 250 for temperatures from -60 ° C, + 50 ° C and + 160 ° C.
  • the operating points are fixed by the base current of the transistor, so that the operating point 311 at -60 ° C is at the limit of the saturation zone of the transistor 250.
  • the other operating points, corresponding at higher temperatures, are in areas of high saturation of the transistor.
  • Part B of FIG. 6 shows the evolution of the emitter-collector voltage (V EC ) of the transistor 250 as a function of the temperature.
  • the voltage scale of part B is identical to that of part A and the voltages corresponding to operating points 311, 312 and 313 are reported there.
  • Part B of Figure 6 allows you to put highlight the non-linear evolution of the voltage at terminals of transistor 250 as a function of temperature, for a constant current as a first approximation.
  • This correction can be finely adjusted by modifying the values R 1 and R C of the first resistance in the voltage divider and in the reference voltage generator.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
EP00403128A 1999-11-15 2000-11-10 Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung Expired - Lifetime EP1102148B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9914284A FR2801116B1 (fr) 1999-11-15 1999-11-15 Dispositif generateur de tension corrige a basse temperature
FR9914284 1999-11-15

Publications (2)

Publication Number Publication Date
EP1102148A1 true EP1102148A1 (de) 2001-05-23
EP1102148B1 EP1102148B1 (de) 2005-05-04

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EP00403128A Expired - Lifetime EP1102148B1 (de) 1999-11-15 2000-11-10 Niedrigtemperaturkorrigierte Spannungsgeneratoreinrichtung

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US (1) US6407638B1 (de)
EP (1) EP1102148B1 (de)
DE (1) DE60019878T2 (de)
FR (1) FR2801116B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1501001A1 (de) * 2003-07-22 2005-01-26 STMicroelectronics Limited Vorspannungsschaltung
US8315588B2 (en) * 2004-04-30 2012-11-20 Lsi Corporation Resistive voltage-down regulator for integrated circuit receivers
US7176750B2 (en) * 2004-08-23 2007-02-13 Atmel Corporation Method and apparatus for fast power-on of the band-gap reference
US7417459B2 (en) * 2005-04-06 2008-08-26 Intel Corporation On-die offset reference circuit block

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939442A (en) * 1989-03-30 1990-07-03 Texas Instruments Incorporated Bandgap voltage reference and method with further temperature correction
EP0552964A2 (de) * 1992-01-22 1993-07-28 Samsung Semiconductor, Inc. Referenzschaltung
US5291122A (en) * 1992-06-11 1994-03-01 Analog Devices, Inc. Bandgap voltage reference circuit and method with low TCR resistor in parallel with high TCR and in series with low TCR portions of tail resistor
US5359233A (en) * 1990-09-28 1994-10-25 Dallas Semiconductor Corporation Reset monitor for detection of power failure and external reset
US5373226A (en) * 1991-11-15 1994-12-13 Nec Corporation Constant voltage circuit formed of FETs and reference voltage generating circuit to be used therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190796A (en) * 1977-06-02 1980-02-26 Tokyo Shibaura Electric Company, Limited Pressure detecting apparatus having linear output characteristic
DE3171674D1 (en) * 1980-04-28 1985-09-12 Fujitsu Ltd Temperature compensating voltage generator circuit
US5668467A (en) * 1995-02-17 1997-09-16 National Semiconductor Corporation Current regulator having start-up circuitry which is turned off after start-up
FR2767207B1 (fr) 1997-08-11 2001-11-02 Sgs Thomson Microelectronics Dispositif generateur de tension constante utilisant les proprietes de dependance en temperature de semi-conducteurs
US6150872A (en) * 1998-08-28 2000-11-21 Lucent Technologies Inc. CMOS bandgap voltage reference
US6121824A (en) * 1998-12-30 2000-09-19 Ion E. Opris Series resistance compensation in translinear circuits

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939442A (en) * 1989-03-30 1990-07-03 Texas Instruments Incorporated Bandgap voltage reference and method with further temperature correction
US5359233A (en) * 1990-09-28 1994-10-25 Dallas Semiconductor Corporation Reset monitor for detection of power failure and external reset
US5373226A (en) * 1991-11-15 1994-12-13 Nec Corporation Constant voltage circuit formed of FETs and reference voltage generating circuit to be used therefor
EP0552964A2 (de) * 1992-01-22 1993-07-28 Samsung Semiconductor, Inc. Referenzschaltung
US5291122A (en) * 1992-06-11 1994-03-01 Analog Devices, Inc. Bandgap voltage reference circuit and method with low TCR resistor in parallel with high TCR and in series with low TCR portions of tail resistor

Also Published As

Publication number Publication date
DE60019878T2 (de) 2006-02-16
FR2801116B1 (fr) 2002-01-25
FR2801116A1 (fr) 2001-05-18
EP1102148B1 (de) 2005-05-04
DE60019878D1 (de) 2005-06-09
US6407638B1 (en) 2002-06-18

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