EP1088337A1 - Appareil et procede de nettoyage de plaquette en semi-conducteur - Google Patents

Appareil et procede de nettoyage de plaquette en semi-conducteur

Info

Publication number
EP1088337A1
EP1088337A1 EP00918167A EP00918167A EP1088337A1 EP 1088337 A1 EP1088337 A1 EP 1088337A1 EP 00918167 A EP00918167 A EP 00918167A EP 00918167 A EP00918167 A EP 00918167A EP 1088337 A1 EP1088337 A1 EP 1088337A1
Authority
EP
European Patent Office
Prior art keywords
brush
semiconductor wafer
cleaning
wafer
megasonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00918167A
Other languages
German (de)
English (en)
Inventor
Liming Zhang
Milind G. Weling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of EP1088337A1 publication Critical patent/EP1088337A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes

Definitions

  • the field of the present invention pertains to semiconductor fabrication processing. More particularly, the present invention relates to a device for more effective post CMP wafer cleaning. In one embodiment, there is disclosed a post CMP megasonic and brush- based semiconductor wafer cleaning.
  • the geometry of the features of the IC components are commonly defined photographically through a process known as photolithography. Very fine surface geometries can be reproduced accurately by this technique.
  • the photolithography process is used to define component regions and build up components one layer on top of another. Complex ICs can often have many different built-up layers, each layer having components, each layer having differing interconnections, and each layer stacked on top of the previous layer. The resulting topography of
  • a mask image, or pattern, defining the various components is focused onto a photosensitive layer using ultraviolet light.
  • the image is focused onto the surface using the optical means of the photolithography tool and is imprinted into the photosensitive layer.
  • optical resolution must increase.
  • the depth of focus of the mask image correspondingly narrows. This is due to the narrow range in depth of focus imposed by the high numerical aperture lenses in the photolithography tool. This narrowing depth of focus is often the limiting factor in the degree of resolution obtainable and, thus, the smallest components obtainable using the photolithography tool.
  • a precisely flat surface is desired.
  • the precisely flat (e.g. fully planarized) surface will allow for extremely small depths of focus and, in turn, allow the definition and subsequent fabrication of extremely small components.
  • CMP Chemical-mechanical polishing
  • FIG 1 shows a down view of a typical prior art CMP machine 100 and Figure 2 shows a side cut away view of the CMP machine 100.
  • the CMP machine 100 is fed wafers to be polished.
  • the CMP machine 100 picks up the wafers with an arm 101 and places them onto a rotating polishing pad 102.
  • the polishing pad 102 is made of a resilient material and is typically textured, often with a plurality of predetermined groves 103, to aid the polishing process.
  • the polishing pad 102 rotates on a platen 104, or turn table, located beneath the polishing pad 102, at a predetermined speed.
  • a wafer 105 is held in place on the polishing pad 102 and the arm 101 by a carrier ring 112 and a carrier 106.
  • the lower surface of the wafer 105 rests against the polishing pad 102.
  • the upper surface of the wafer 105 is against the lower surface of the carrier 106 of the arm 101.
  • the arm 101 rotates the wafer 105 at a predetermined rate.
  • the arm 101 forces the wafer 105 into the polishing pad 102 with a predetermined amount of down force.
  • the CMP machine 100 also includes a slurry dispense arm 107 extending across the radius of the polishing pad 102.
  • the slurry dispense arm 107 dispenses a flow of slurry onto the polishing pad 102.
  • the slurry is a mixture of de-ionized water and polishing agents designed to aid chemically the smooth and predictable planarization of the wafer.
  • a constant and predictable removal rate is important to the uniformity and performance of the wafer fabrication process.
  • the removal rate should be expedient, yet yield precisely planarized wafers, free from surface topography. If the removal rate is too slow, the number of planarized wafers produced in a given period of time decreases, degrading wafer through-put of the fabrication process. If the removal rate is too fast, the CMP planarization process will not be uniform across the surface of the wafers, degrading the yield of the fabrication process.
  • the CMP machine 100 includes a conditioner assembly 120.
  • the conditioner assembly 120 includes a conditioner arm 108, which extends across the radius of the polishing pad 102.
  • An end effector 109 is connected to the conditioner arm 108.
  • the end effector 109 includes an abrasive conditioning disk 110 which is used to roughen the surface of the polishing pad 102.
  • the conditioning disk 110 is rotated by the conditioner arm 108 and is translationally moved towards the center of the polishing pad 102 and away from the center of the polishing pad 102, such that the conditioning disk 110 covers the radius of the polishing pad 102, thereby covering nearly the entire surface area of the polishing pad 102 as the polishing pad 102 rotates.
  • a polishing pad having a roughened surface has an increased number of very small pits and gouges in its surface from the conditioner assembly 120 and, therefore, produces a faster removal rate via increased slurry transfer to the surface of the wafer and from more effective application of polishing down force. Without conditioning, the surface of polishing pad 102 is smoothed during the polishing process and removal rate decreases dramatically.
  • the conditioner assembly 120 re-roughens the surface of the polishing pad 102, thereby improving the transport of slurry and improving the removal rate.
  • the action of the rough surface of the polishing pad 102, the chemical softening action of the slurry, and the abrasive action of the slurry combine to polish the wafer 105 such that topography over millimeter scale planarization distances is nearly completely smoothed away.
  • wafer 105 is removed from polishing pad 102 by arm 101 and is prepared for the next phase in the device fabrication process.
  • wafer 105 must be cleansed of contaminants left over from the CMP process (e.g., particles of polishing pad 102, trace amounts of slurry/abrasives, metal ions, and the like).
  • the surface of wafer 105 is cleaned in order to remove particles, metal ions, and other such contaminants.
  • the contaminants left over from the CMP process be removed before wafer 105 proceeds through further fabrication processing.
  • the presence of contaminant particles can disrupt subsequent lithography, which can lead to, for example, broken lines, shorts, and the like.
  • the most widely used post-CMP cleaning processes involves the use of brushes, wherein the brushes are frictionally used to scrub the surface of wafer 105 until all contaminants are removed.
  • brushes has a distinct disadvantage, however, in that the brush needs to be in direct contact with the surface of wafer 105 in order to wipe off the contaminants effectively. Cleaning effectiveness is increased with increasing brush pressure against the surface. This is offset by the fact that increased pressure leads to an increased risk of damage to the wafer surface from the scrubbing action of the brush. Additionally, in most cases, the brush itself can be loaded with the contaminants and thereby reduce the cleaning efficiency. Furthermore, brushes tend to be less effective in the presence of topography within recessed areas (e.g., trenches, holes, etc.).
  • megasonic cleaning involves the use of a high frequency, extremely agitated stream of fluid (e.g., de-ionized water) which is directed towards the surface of wafer 105.
  • the extreme agitating action of the stream of fluid forcibly dislodges contaminants and polishing byproducts from the wafer surface.
  • the megasonic cleaning provides the advantage of dislodging contaminants and particles, even in recessed areas, without making direct physical contact with the wafer, thereby greatly reducing the risk of damage to the wafer surface.
  • a primary disadvantage of megasonic cleaning is the fact that the cleaning action is not as effective as the cleaning action of brushing.
  • the present invention provides a method and system for efficiently removing CMP contaminants and byproducts from the surface of a wafer after the completion of CMP processing.
  • the present invention provides for efficient post CMP cleaning that does not risk damaging the surface of the wafer.
  • the present invention effectively cleans a post- CMP wafer surface of contaminants/byproducts without causing damage.
  • the present invention is implemented as a cleaning apparatus for removing contaminants from the surface of a semiconductor wafer.
  • a megasonic nozzle and a scrubbing brush are included in the cleaning apparatus.
  • the megasonic nozzle is adapted for outputting megasonically agitated fluid to dislodge contaminant particles from a surface of a semiconductor wafer.
  • the scrubbing brush is adapted to contact the surface of the semiconductor wafer and frictionally remove therefrom the contaminant particles.
  • the megasonic nozzle and the scrubbing brush are both mounted within a cleaning assembly.
  • the cleaning assembly simultaneously employs both the megasonic nozzle and brush to clean efficiently the contaminant particles from the surface of the semiconductor wafer.
  • the cleaning assembly's simultaneous use of both megasonically agitated fluid and the scrubbing brush provides for more effective cleaning than using one or the other alone. In this manner, the cleaning assembly effectively cleans the post-CMP wafer surface of contaminants/byproducts without damaging the surface.
  • Prior art Figure 1 shows a down view of a typical prior art CMP machine.
  • Prior art Figure 2 shows a side view of the prior art CMP machine from Figure 1.
  • Figure 3 shows a diagram of the scrubbing brush being used on a semiconductor wafer, illustrating the brush-based component of the present invention.
  • Figure 4 shows a diagram of a megasonic transducer being used on a semiconductor wafer, illustrating the megasonic-based component of the present invention.
  • Figure 5 shows a diagram depicting a megasonic-based component to the present invention wherein the megasonic nozzle and megasonic transducer are integrated into a single unit and a spinning motion is imparted to the semiconductor wafer.
  • Figure 6A shows a side view of a combined megasonic/brush cleaning assembly in accordance with one embodiment of present invention.
  • Figure 6B shows a down view of the combined megasonic/brush cleaning assembly from figure 6A.
  • Figure 7A shows a side view of a combined megasonic/brush cleaning assembly in accordance with an alternative embodiment of the present invention.
  • Figure 7B shows a down view of the combined megasonic/brush cleaning assembly from Figure 7A.
  • Figure 8 shows a flowchart of steps of a process in accordance with one embodiment of the present invention.
  • the present invention provides a combined megasonic and brush based semiconductor wafer cleaning method and system for efficiently removing CMP contaminants and byproducts from the surface of a wafer after the completion of CMP processing.
  • the present invention provides for efficient post-CMP cleaning that does not risk damaging the surface of the wafer.
  • the present invention effectively cleans a post- CMP wafer surface of contaminants/byproducts without causing damage.
  • Chemical-mechanical polishing (CMP) is the preferred method of obtaining full planarization of a semiconductor wafer containing devices for fabrication processing.
  • the CMP process involves removing one or more layers of material (e.g., dielectric material, aluminum, tungsten, or copper layers, or the like) using both the frictional contact between the wafer and a moving polishing pad saturated with a polishing slurry and the chemical action of the slurry itself. Polishing through the CMP process flattens out height differences, since high areas of topography (hills) are removed faster than areas of low topography (valleys).
  • material e.g., dielectric material, aluminum, tungsten, or copper layers, or the like
  • CMP process is the preferred technique with the capability of smoothing out topography over millimeter scale planarization distances leading to maximum angles of much less than one degree after polishing.
  • the CMP machine, the chemical softening action of the slurry, and the abrasive action of the slurry that combine to polish a semiconductor wafer also combine to create large amounts of contaminants and polishing byproducts.
  • These contaminants/byproducts e.g., particles of polishing pad 102, trace amounts of slurry/abrasives, metal ions, and the like
  • the wafer is removed from the CMP machine and is prepared for the next phase in the device fabrication process.
  • the wafer must be cleansed of contaminants/byproducts left over from the CMP. process. It is very important that the contaminants left over from the CMP process be removed before the wafer proceeds through further fabrication processing. For example, the presence of contaminants particles can disrupt subsequent lithography processes, which can lead to, for example, broken lines, shorts, and the like.
  • FIG. 3 a diagram of a scrubbing brush 300 being used on a semiconductor wafer 310 is shown.
  • Figure 3 shows the scrubbing brush component of a cleaning assembly in accordance with the present invention.
  • scrubbing brush 300 rotates in the direction shown by arrow 301.
  • wafer 310 frictionally rotates (e.g., spins) beneath scrubbing brush 300 such that scrubbing brush 300 frictionally contacts the entire surface a wafer 310.
  • the scrubbing brush 300 is advantageous in that it efficiently removes those contaminants which come within direct contact with scrubbing brush 300 as it frictionally moves across the surface a wafer 310.
  • Scrubbing brush 300 in this embodiment, is a porous brush saturated with specifically tailored cleaning fluids.
  • the cleaning fluids are tailored in accordance with the materials comprising the surface of wafer 310 (e.g., metal lines covered with oxide, tungsten in oxide via plugs, copper, etc.).
  • the chemicals contained within the cleaning fluid chemically interact with contaminants on the surface of wafer 310.
  • the cleaning fluids react with the contaminants, yielding a reaction product.
  • the reaction product is removed from the wafer surface by the wiping force of scrubbing brush 300 as well as the flow of the cleaning fluid. Referring now to Figure 4, a diagram of a megasonic transducer
  • Figure 4 shows the megasonic nozzle component of a cleaning assembly in accordance with the present invention. As depicted in Figure 4, a nozzle 401 dispenses cleaning fluid, shown by arrows 402, onto the surface of wafer
  • megasonic transducer 400 functions by imparting high frequency (e.g., 2 MHz or above), high energy vibrations to cleaning fluid 402. These high energy vibrations are imparted to the surface of wafer 310 as cleaning fluid 402 contacts the surface. The force of the high energy vibrations within the cleaning fluid 402 dislodges contaminant particles from the surface of wafer 310.
  • a primary distinction between the megasonic component of the present invention and the brush component is the fact that the surface of wafer 310 is cleaned without any direct physical contact with megasonic nozzle 401 or megasonic transducer 400.
  • the force which removes the contaminants is the force of the megasonic agitated cleaning fluid 402 (e.g., cavitation, pressure gradients, streaming effects, and the like).
  • the pressure gradient developed by the megasonic waves dislodges and lifts the contaminants from the surface of wafer 310.
  • the streams and the bulk cleaning fluid flow then carry the contaminants away.
  • FIG. 5 shows a version of the megasonic component of the present invention wherein the megasonic transducer and the nozzle are integrated into a single megasonic nozzle 500.
  • the megasonic nozzle 500 traverses to the left and to the right of wafer 310 as shown by line 501. Additionally, wafer 310 spins beneath megasonic nozzle 500 as it moves back and forth across its surface.
  • Megasonic nozzle 500 functions in a substantially similar manner as megasonic nozzle 401 and megasonic transducer 400 of Figure 4. However, megasonic nozzle 500 uses both its own movement and the spinning movement of wafer 310 to cover more readily the surface of wafer 310.
  • FIG. 6A and 6B a side view and a down view of a combined megasonic/brush cleaning assembly 600 in accordance with the present invention is shown.
  • the cleaning assembly 600 depicts both the megasonic component and the brush component (e.g., megasonic transducer 602 and brush 601) as combined within a cleaning assembly 600.
  • the megasonic transducer 602 is located coaxially within brush 601.
  • Brush 601 rotates in the direction shown by arrow 603.
  • Wafer 310 rotates frictionally beneath brush 601.
  • megasonic transducer In accordance with the present invention, megasonic transducer
  • the simultaneous cleaning effect of the scrubbing action of brush 601 and the megasonic energy of megasonic transducer 602 provides numerous advantages.
  • One such advantage is that the aggregate force of both the brushing component and the megasonic component is significantly stronger than mere brushing or megasonic fluid alone and, thus, is more effective in removing contaminants.
  • Brush loading refers to the fact that, without the application of megasonic energy from megasonic transducer 602, brush 601 could pick up significant amounts of contaminants from wafer 310 such that brush 601 could no longer effectively remove all of the contaminants from the wafer surface (e.g., trying to clean the wafer with a "dirty” brush).
  • Yet another advantage of the cleaning assembly 600 of the present invention is that by combining the action of brush 601 with megasonic transducer 602 to yield a high cleaning efficiency, it is possible to optimize the pressure of the brush 601 and the energy of the megasonic transducer 602 so that the possibility of damage to the surface of wafer 310 during cleaning will be minimized.
  • the high cleaning efficiency allows less pressure to be applied by brush 601 to the surface of wafer 310 in comparison to brushing alone. Lower amounts of brush pressure reduce the risks of frictional damage to the surface of wafer 310.
  • Another advantage of the cleaning assembly 600 the present invention is that the combining of a brush cleaning process with a megasonic cleaning process within a single cleaning assembly 600 reduces both the number of cleaning steps and the amount of factory floor space required, as opposed to a case where a brush cleaning tool and a megasonic cleaning tool are used separately, one after the other.
  • the cleaning steps and time are reduced by operating both scrubbing and megasonic cleaning simultaneously, thereby improving wafer throughput.
  • a cleaning assembly 600 tool in accordance with the present invention will have a smaller footprint.
  • megasonic frequencies beyond 500KHz are most effective for post-CMP cleaning. Cleaning efficiency could be optimized by choice of solution chemistry and flow, megasonic process conditions of frequency and power, and scrubbing process conditions of brush pressure, rotational speed and time.
  • cleaning fluids can be tailored to the chemical makeup of the surface of wafer 310, wherein specific chemicals are included within a cleaning solution in order to induce specific cleaning effects upon materials of the surface of wafer 310 (e.g., dielectric, various types of metal, etc.).
  • specific chemicals e.g., dielectric, various types of metal, etc.
  • ordinary de-ionized water can be used as the cleaning fluid.
  • the disadvantage of using scrubbing alone is that the brush needs to be in direct contact with the wafer surface in order effectively to wipe off the contaminants.
  • the brush may damage the wafer surface if a high pressure is exerted.
  • the brush itself can be loaded with the contaminants and thereby reduce the cleaning efficiency.
  • megasonic cleaning alone is that the force in a megasonic cleaner is not as effective as the direct wiping in a scrubber; therefore, megasonic cleaning is not as popular as scrubbing in post-CMP applications.
  • High energy megasonic cleaning which employs very high energy levels to compensate for the less effective cleaning action, can also damage the wafer surface, for example, when the cavitation occurs at or very close to the wafer surface.
  • FIGS 7A and 7B a side view and a down view of a combined megasonic/brush cleaning assembly 700 in accordance with an alternate embodiment of the present invention are shown.
  • the cleaning assembly 700 depicts two megasonic components 702 and 703 and a brush component 701 combined within a cleaning assembly 700.
  • the megasonic transducers 702 and 703 are located alongside the brush 701 as opposed to being coaxially within brush 701.
  • Brush 701 rotates in the direction shown by arrow 704.
  • Wafer 310 spins frictionally beneath brush 701 as shown by the direction of spin 705.
  • Cleaning assembly 700 shows one variation in accordance with the present invention.
  • Cleaning assembly 700 functions in substantially the same manner as cleaning assembly 600 of Figures 6A and 6B.
  • cleaning assembly 700 locates two transducers alongside the scrubbing brush .(e.g., brush 701) as opposed to within the scrubbing brush.
  • megasonic transducers 702 and 703 impart megasonic energy to the surface of wafer 310 in a more direct manner.
  • wafer 310 spins beneath brush 701 and transducers 702 and 703.
  • cleaning assembly 700 uses the wiping action of brush 701 and the megasonic energy of transducers 702 and 703 to provide for safe, high efficiency, low footprint post-CMP cleaning.
  • Process 800 shows the steps involved in the operating process of a post CMP cleaning tool employing a cleaning assembly (e.g., cleaning assembly 600 of Figures 6A and 6B) of the present invention.
  • Process 800 shows steps from receiving wafer for post-CMP cleaning to sending the wafer to the next step in fabrication process.
  • Process 800 begins in step 801, where a wafer is received for cleaning after the wafer has been processed in a CMP machine.
  • chemical mechanical polishing involves the use of slurries and frictional contact with a polishing pad.
  • the CMP process leads to large amounts of contaminants which must be removed from the surface of the wafer.
  • the wafer is placed within the cleaning assembly of a post-CMP cleaning tool in accordance with the present invention.
  • the cleaning assembly e.g., cleaning assembly 600
  • the cleaning assembly includes both a scrubbing brush (e.g., brush 601) and a megasonic transducer (e.g., megasonic transducer 602).
  • cleaning fluid is dispensed onto the wafer.
  • the cleaning fluid can be a specialized cleaning solution containing various chemicals specifically tailored for the chemical makeup of the wafer surface, or alternatively, the cleaning fluid can be ordinary de-ionized water.
  • step 804 the surface of the wafer is brushed using the scrubbing brush mounted within the cleaning assembly.
  • the scrubbing brush uses a wiping action to remove the contaminants on the surface of the wafer.
  • step 805 megasonic cleaning fluid is dispensed onto the wafer using a megasonic nozzle mounted within the cleaning assembly.
  • the cleaning fluid is megasonically agitated by the megasonic nozzle at high frequencies (e.g., 500 kHz or above).
  • the megasonic energy functions by dislodging contaminant particles from the surface of the wafer.
  • step 806 contaminants are removed from the surface the wafer by the combined action of the brush and the megasonic nozzle of the cleaning assembly.
  • the combination of the megasonic energy and the wiping action of the brush provides for more efficient cleaning than either of the two alone.
  • the high efficiency cleaning action of the cleaning assembly allows less energy to be used with the megasonic nozzle and allows less pressure to be applied with the scrubbing brush in comparison to prior art cleaning methods.
  • step 807 the surface of a wafer is rinsed using de-ionized water. The rinse is to remove any remaining cleaning fluid leftover after the cleaning process.
  • step 808 the wafer is spun dry. Once the cleaning fluid has been rinsed away in step 807, the spin dry yields a completely clean wafer, free of all contaminants.
  • step 809 the completely clean wafer is removed from the cleaning assembly and sent from the post-CMP cleaning tool to the next step in the device fabrication process.
  • the present invention provides a method and system for efficiently removing CMP contaminants and byproducts from the surface of a wafer after the completion of CMP processing.
  • the present invention provides for efficient post-CMP cleaning that does not risk damaging the surface of the wafer.
  • the present invention effectively cleans a post-CMP wafer surface of contaminants/byproducts without causing damage.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

L'invention concerne un appareil de nettoyage pour enlever les contaminants de la surface d'une plaquette en semi-conducteur. Une buse mégasonique et une brosse de lavage sont prévues dans l'appareil de nettoyage. La buse mégasonique est conçue pour produire un fluide agité de manière mégasonique destiné à déloger les particules contaminantes d'une surface de la plaquette en semi-conducteur. La brosse de lavage est conçue pour venir en contact avec la surface de la plaquette en semi-conducteur et enlever par friction les particules contaminantes. La buse mégasonique et la brosse de lavage sont toutes deux montées dans un ensemble de nettoyage. L'ensemble de nettoyage de l'invention utilise simultanément la buse mégasonique et la brosse pour débarrasser efficacement la plaquette en semi-conducteur des particules contaminantes.
EP00918167A 1999-03-30 2000-03-20 Appareil et procede de nettoyage de plaquette en semi-conducteur Withdrawn EP1088337A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28161999A 1999-03-30 1999-03-30
US281619 1999-03-30
PCT/US2000/007394 WO2000059006A1 (fr) 1999-03-30 2000-03-20 Appareil et procede de nettoyage de plaquette en semi-conducteur

Publications (1)

Publication Number Publication Date
EP1088337A1 true EP1088337A1 (fr) 2001-04-04

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Application Number Title Priority Date Filing Date
EP00918167A Withdrawn EP1088337A1 (fr) 1999-03-30 2000-03-20 Appareil et procede de nettoyage de plaquette en semi-conducteur

Country Status (6)

Country Link
EP (1) EP1088337A1 (fr)
JP (1) JP2002540623A (fr)
KR (1) KR20010052451A (fr)
CN (1) CN1310860A (fr)
AU (1) AU3903000A (fr)
WO (1) WO2000059006A1 (fr)

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