EP0987966A1 - Decorative stone - Google Patents

Decorative stone

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Publication number
EP0987966A1
EP0987966A1 EP98952636A EP98952636A EP0987966A1 EP 0987966 A1 EP0987966 A1 EP 0987966A1 EP 98952636 A EP98952636 A EP 98952636A EP 98952636 A EP98952636 A EP 98952636A EP 0987966 A1 EP0987966 A1 EP 0987966A1
Authority
EP
European Patent Office
Prior art keywords
gemstone
pyramid
layer
shaped
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98952636A
Other languages
German (de)
French (fr)
Other versions
EP0987966B1 (en
Inventor
Ernst Michael Winter
Lothar SCHÄFER
Thorsten Matthee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Winter CVD Technik GmbH
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Winter CVD Technik GmbH
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Filing date
Publication date
Application filed by Winter CVD Technik GmbH filed Critical Winter CVD Technik GmbH
Publication of EP0987966A1 publication Critical patent/EP0987966A1/en
Application granted granted Critical
Publication of EP0987966B1 publication Critical patent/EP0987966B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery
    • A44C27/005—Coating layers for jewellery
    • A44C27/007—Non-metallic coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Definitions

  • the invention relates to artificial gemstones.
  • Gemstones especially gemstones, are ground or ground before they are set in the metal body of a piece of jewelry to spectrally disassemble and reflect the incident light, thereby causing the brilliance and fire of a gemstone.
  • this requires a minimum size and purity of the gem. So about two are suitable
  • One third of the mined diamonds are not used to manufacture screw stones by grinding because they are either too small or too deep or because of their color or inclusions they can only be used industrially (for technical purposes).
  • the brilliance or shine of the diamond is mainly due to the fact that a large part of the light falling into the gem stone is scattered back almost in the direction from which it came. This is achieved in that the light that has entered the diamond crystal through the upper facets is reflected in the lower brilliant area and can exit again through the upper facets. The light is reflected in at least two reflection steps by a total of about (180 _ + x).
  • the arrangement of the facet angles to one another must take into account the optical properties of the diamond / air interface, so that the angle of total reflection is never exceeded.
  • the angles of the light beam path are always larger than those of the total reflection angle. That is, the light is reflected back upwards, on the other hand the light must strike the upper facets and the panel at such an angle that the light can exit.
  • the diamond brilliants are not cut in such a way that the light is reflected back exactly in the direction from which it came (as would be the case with the cat's eye). Rather, there is an opening angle between the incident and emerging beam, which leads to the eye-catching reflections. The exit angle is different for different wavelengths due to the dispersion.
  • Essential for the fire of the brilliant is the dispersion of the light in the diamond, which causes the light to be broken down like a prism and then perceived by the eye as spectral colors.
  • the object of the invention is to create artificial gemstones from large-scale gemstone layers obtained by vapor deposition, which despite the unfavorable dimensions, i. H. given the limited thickness of these layers an attractive appearance.
  • a screw stone which consists of a preferably tabular support or substrate, one surface of which has at least one pyramid-shaped depression and carries a gem layer obtained by gas phase deposition, preferably by the CVD or PVD method.
  • the underside should be designed accordingly, so that there is a reflection of a large part of the incident light, as with single-crystal natural brilliants.
  • This can be achieved by appropriate pretreatment of the surface of the silicon wafer to be coated. After this pretreatment, the silicon wafer has the necessary shape as a negative shape, so that the back or underside of the diamond layer that is formed receives the correspondingly positive shape.
  • materials such as noble metals, tungsten, molybdenum or hard metal which can be coated well with diamond and are also suitable as supports or supports for such artificially produced diamond layers the surface of which a suitable structure can be incorporated.
  • the incorporation of the structure into the support to be coated can either mechanically, for. B. by grinding a certain profile, electrolytically or, in particular in the case of a silicon wafer, can be achieved chemically or plasma-technically by etching.
  • isotropic as well as anisotropic processes can be used.
  • anisotropic etchant z. B. KOH. This base leads to the formation of pyramidal etching pits in the single-crystal wafer.
  • a pyramidal structure can also be etched into a base using an isotropic etchant.
  • a suitable composition of the etching solution can produce the required angles of the pyramid. If, as mentioned above, there is a gradual mirroring of approximately 180 ⁇ x, the angles of the pyramid must be adjusted accordingly.
  • edge areas of the carrier of the gemstone layer other pyramid angles can be set than in the middle area.
  • the angles of the facets can be selected so that the light is reflected back and forth several times in the gemstone layer, whereby a strong splitting of the spectral colors is achieved.
  • the easiest way is to introduce the same angle on the entire surface of the carrier by a single etching attack, which z. B. have a pyramid opening angle of 109. This angle can easily be achieved by etching procedures. Before the etching procedure, the surface of the carrier can be subjected to laser damage in order to easily achieve the desired geometry.
  • Orientations other than (100) or (111) wafers can also be used. What matters is that Targeted interaction of crystal orientation of the gem layer and direction of the etching attack in order to achieve an optimal optical effect.
  • a polycrystalline, e.g. B. in contrast to a diamond single crystal, there are still grain boundaries, which are to be considered as additional refractive areas due to a different refractive index.
  • the grain boundaries advantageously in their structure, for. B. must be aligned columnar to have a positive effect on brilliance and fire. In any case, the influence of the grain boundaries must be taken into account in the optical effect.
  • the light can also be scattered back in that the back or underside of the gas phase gemstone, in particular CVD diamonds, is additionally z. B. is mirrored by gold or titanium. Then the reflection takes place simply by reflection on the gold or titanium surface.
  • an octagonal shape of the surface of the artificial diamond layer is advantageous, which is subsequently ground into it. The angles in the underside have to be adapted to the changed exit conditions.
  • the surface of the substrate or substrate bearing the deposited gem layer does not have to be flat; it can e.g. B. be convex to obtain artificial gemstones in the form of a cabochon or boutton.
  • artificial gemstones in particular diamonds, not only with special optical properties such as brilliance and fire, but also with surface dimensions, e.g. B. by multiple dimensioning, gaining how they are not nearly attainable with the stones occurring in nature and also cannot be obtained with other synthetic processes, in particular the high-pressure, high-temperature technology, for economic and technical reasons.
  • the gemstones according to the invention can be given their own body color (e.g. blue by boron or yellow by nitrogen) during manufacture by the composition of the gas phase, which enables their use in any conceivable piece of jewelry or any conceivable decoration with gemstones.
  • Fig. 1 A schematic side view of the gem layer of a gem.
  • Fig. 2 A schematic view of area Y of FIG. 1 on an enlarged scale.
  • 3 A schematic top view of the gem layer according to FIG. 1.
  • Fig. 4 A schematic view of the gem layer according to Fig. 1 from below.
  • Fig. 5 A schematic view of area X of Fig. 4 on an enlarged scale.
  • the gemstone layer 1 has a multiplicity of pyramid-shaped elevations 2 with an angle "A" on the underside and is provided with an octagonal facet cut on its top.
  • the polished and polished gem layer 1 adhering to the carrier forms the gem according to the invention, which is in a piece of jewelry, z. B. a ring can be taken.
  • the carrier to which the gemstone layer is applied does not have to have the dimensions of the later gem. Parts can be separated from a large-area carrier with a layer of precious stones and processed or processed into a gem.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Adornments (AREA)
  • Laminated Bodies (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Magnetic Heads (AREA)
  • Resistance Heating (AREA)
  • Cosmetics (AREA)

Abstract

A gemstone is provided and has a large surface-area, plate-shaped support having a surface with least one pyramid-shaped depression. A thin vapor phase deposit layer comprises a thin, surface-shaped precious synthetic gemstone layer disposed on the large surface-area, plate-shaped support and has an upper surface facing away from the plate-shaped support and an underside having at least one pyramid-shaped projection disposed in and coinciding with the pyramid-shaped depression of the support. Side faces of the pyramid-shaped projections of the underside of the vapor phase deposit layer upon the plate-shaped support impart decorative, diamond-light-reflective qualities to the synthetic gemstone layer.

Description

Schmuckstein Gemstone
Die Erfindung betrifft künstliche Schmucksteine.The invention relates to artificial gemstones.
Schmucksteine, insbesondere Edelsteine, werden, bevor sie im Metallkörper eines Schmuckstückes gefaßt werden, geschliffen oder angeschliffen, um das einfallende Licht spektral zu zerlegen und zu reflektieren, wodurch die Brillanz und das Feuer eines Schmucksteines bewirkt wird. Dies setzt jedoch eine Mindestgröße und Reinheit des Schmucksteines voraus. So eignen sich etwa zwei Drittel der geschürften Diamanten nicht zur Herstellung von Schraucksteinen durch Schleifen, weil sie entweder zu geringe Körperlichkeit bzw. Tiefe haben oder sich wegen ihrer Farbe oder ihrer Einschlüsse nur industriell (für technische Zwecke) verwerten lassen.Gemstones, especially gemstones, are ground or ground before they are set in the metal body of a piece of jewelry to spectrally disassemble and reflect the incident light, thereby causing the brilliance and fire of a gemstone. However, this requires a minimum size and purity of the gem. So about two are suitable One third of the mined diamonds are not used to manufacture screw stones by grinding because they are either too small or too deep or because of their color or inclusions they can only be used industrially (for technical purposes).
Die Brillanz bzw. den Glanz erhält der Diamant vor allem dadurch, daß ein großer Teil des in den Schmuckstein einfallenden Lichtes nahezu in die Richtung zurückgestreut wird, aus der es gekommen ist. Dies wird dadurch erreicht, daß das Licht, welches durch die oberen Facetten in den Diamantkristall eingefallen ist, im unteren Brillantbereich reflektiert wird und durch die oberen Facetten wieder austreten kann. Das Licht wird dabei in mindestens zwei Reflexionsschritten um insgesamt etwa (180 _+ x ) gespiegelt. Die Anordnung der Facettenwinkel zueinander muß dabei den optischen Eigenschaften der Grenzfläche Diamant/Luft Rechnung tragen, so daß der Winkel der Totalreflexion nie überschritten wird.The brilliance or shine of the diamond is mainly due to the fact that a large part of the light falling into the gem stone is scattered back almost in the direction from which it came. This is achieved in that the light that has entered the diamond crystal through the upper facets is reflected in the lower brilliant area and can exit again through the upper facets. The light is reflected in at least two reflection steps by a total of about (180 _ + x). The arrangement of the facet angles to one another must take into account the optical properties of the diamond / air interface, so that the angle of total reflection is never exceeded.
Es ist beim Strahlengang im Diamanten wichtig, daß in den Rückfacetten, also im unteren Teil des Diamanten, die Winkel des Lichtstrahlengangs immer größer als die des Totalreflexionswinkels sind. D. h. das Licht wird nach oben zurückreflektiert, andererseits muß das Licht auf die oberen Facetten und die Tafel in einem solchen Winkel auftreffen, daß das Licht austreten kann. Die Diamantbrillanten sind nicht derart geschliffen, daß das Licht exakt in die Richtung zurückgeworfen wird, aus der es gekommen ist (wie es beim Katzenauge der Fall wäre). Vielmehr liegt zwischen einfallendem und austretendem Strahl ein Öffnungswinkel, der zu den ins Auge fallenden Reflexen führt. Der Austrittswinkel ist aufgrund der Dispersion für verschiedene Wellenlängen unterschiedlich.It is important for the beam path in the diamond that in the back facets, i.e. in the lower part of the diamond, the angles of the light beam path are always larger than those of the total reflection angle. That is, the light is reflected back upwards, on the other hand the light must strike the upper facets and the panel at such an angle that the light can exit. The diamond brilliants are not cut in such a way that the light is reflected back exactly in the direction from which it came (as would be the case with the cat's eye). Rather, there is an opening angle between the incident and emerging beam, which leads to the eye-catching reflections. The exit angle is different for different wavelengths due to the dispersion.
Wesentlich für das Feuer des Brillanten ist die Dispersion des Lichtes im Diamanten, die dazu führt, daß das Licht wie in einem Prisma zerlegt und dann als Spektralfarben vom Auge wahrgenommen wird.Essential for the fire of the brilliant is the dispersion of the light in the diamond, which causes the light to be broken down like a prism and then perceived by the eye as spectral colors.
Ein weiterer Effekt, der beim Betrachten eines Brillanten auftritt, sind die vielen Reflexe, die aus den Facetten ins Auge fallen, wenn der Brillant gedreht wird. Dies sind die wesentlichen Aufgaben, die die Facetten zu erfüllen haben.Another effect that occurs when looking at a diamond is the many reflections that result from the Facets catch the eye when the brilliant is turned. These are the main tasks that the facets have to fulfill.
Künstliche nach dem CVD-Verfahren hergestellte Diamantschichten sind entweder zu teuer oder zu dünn, um daraus geschliffene Schmucksteine, z. B. Brillanten, herzustellen, die den beeindruckenden Glanz aufweisen, der ihren Wert begründet. Wichtig für den Glanz ist die Einhaltung einer genauen geometrischen Form, um einen möglichst großen Anteil des einfallenden Lichtes in die Einfallsrichtung zu reflektieren.Artificial diamond layers produced by the CVD process are either too expensive or too thin to cut gemstones, e.g. B. Brilliant to produce, which have the impressive shine that justifies their value. It is important for the gloss to maintain a precise geometric shape in order to reflect as large a portion of the incident light as possible in the direction of incidence.
Aufgabe der Erfindung ist die Schaffung von künstlichen Schmucksteinen aus durch Gasphasenabscheidung erhaltenen großflächigen Edelsteinschichten, die trotz der ungünstigen Abmessungen, d. h. der begrenzten Stärke dieser Schichten ein attraktives Aussehen erhalten.The object of the invention is to create artificial gemstones from large-scale gemstone layers obtained by vapor deposition, which despite the unfavorable dimensions, i. H. given the limited thickness of these layers an attractive appearance.
Diese Aufgabe wird erfindungsgemäß mit einem Schrauck- stein gelöst, der aus einem vorzugsweise tafelförmigen Träger oder Substrat besteht, dessen eine Oberfläche mindestens eine pyramidenförmige Vertiefung aufweist und eine durch Gasphasenabscheidung vorzugsweise nach dem CVD- oder PVD-Verfahren erhaltene Edelsteinschicht trägt.This object is achieved according to the invention with a screw stone, which consists of a preferably tabular support or substrate, one surface of which has at least one pyramid-shaped depression and carries a gem layer obtained by gas phase deposition, preferably by the CVD or PVD method.
Damit die Edelstein- insbesondere Diamantschicht eines erfindungsgemäßen Schmucksteines Brillanz hat, muß deren auf dem Träger, z. B. einem Siliziumwafer , aufliegende Unterseite entsprechend ausgebildet sein, so daß es wie beim einkristallinen natürlichen Brillanten zu einer Reflexion eines Großteils des einfallenden Lichtes kommt. Dies kann durch eine entsprechende Vorbehandlung der Oberfläche des zu beschichtenden Siliziumwafers erreicht werden. Nach dieser Vorbehandlung weist der Siliziumwafer die notwendige Form als Negativform auf, so daß die Rückseite oder Unterseite der sich bildenden Diamantschicht die entsprechend positive Form erhält. Als Träger oder Unterlage für derartige künstlich hergestellte Diamantschichten eignen sich neben Siliziumwafern auch solche Werkstoffe, wie Edelmetalle, Wolfram, Molybdän oder Hartmetall, die sich gut mit Diamant beschichten lassen und in deren Oberfläche eine entsprechende Struktur eingearbeitet werden kann.So that the gemstone- in particular diamond layer of a gemstone according to the invention has brilliance, its on the carrier, for. B. a silicon wafer, the underside should be designed accordingly, so that there is a reflection of a large part of the incident light, as with single-crystal natural brilliants. This can be achieved by appropriate pretreatment of the surface of the silicon wafer to be coated. After this pretreatment, the silicon wafer has the necessary shape as a negative shape, so that the back or underside of the diamond layer that is formed receives the correspondingly positive shape. In addition to silicon wafers, materials such as noble metals, tungsten, molybdenum or hard metal which can be coated well with diamond and are also suitable as supports or supports for such artificially produced diamond layers the surface of which a suitable structure can be incorporated.
Die Einarbeitung der Struktur in den zu beschichtenden Träger kann in Abhängigkeit von dessen Werkstoff entweder mechanisch, z. B. durch Einschleifen eines bestimmten Profils, elektrolytisch oder aber, insbesondere bei einem Siliziumwafer , chemisch bzw. plasmatechnisch durch Ätzen erreicht werden. Hier können isotrope wie auch anisotrope Verfahren zum Einsatz kommen. Als anisotropes Ätzmittel bietet sich z. B. KOH an. Diese Base führt zur Ausbildung von pyramidalen Ätzgruben im einkristallinen Wafer. Bei Verwendung einer Ätzmaske kann auch mittels eines isotropen Ätzmittels eine pyramidale Struktur in eine Unterlage geätzt werden. Eine geeignete Zusammensetzung der Ätzlösung kann die erforderlichen Winkel der Pyramide erzeugen. Sollte, wie oben erwähnt, eine schrittweise Spiegelung um etwa 180 ± x erfolgen, müssen die Winkel der Pyramide entsprechend angepaßt werden.The incorporation of the structure into the support to be coated can either mechanically, for. B. by grinding a certain profile, electrolytically or, in particular in the case of a silicon wafer, can be achieved chemically or plasma-technically by etching. Here isotropic as well as anisotropic processes can be used. As an anisotropic etchant z. B. KOH. This base leads to the formation of pyramidal etching pits in the single-crystal wafer. When using an etching mask, a pyramidal structure can also be etched into a base using an isotropic etchant. A suitable composition of the etching solution can produce the required angles of the pyramid. If, as mentioned above, there is a gradual mirroring of approximately 180 ± x, the angles of the pyramid must be adjusted accordingly.
In den Randbereichen des Trägers der Edelsteinschicht können andere Pyramidenwinkel als im mittleren Bereich eingestellt werden. Es ist aber auch möglich, die reflektierenden Flächen (Facetten) an der Unterseite der Schicht mit unterschiedlichen Winkeln auszurichten, um auf diesem Weg die Brillanz und das Feuer unabhängig voneinander einzustellen. Dabei können die Winkel der Facetten so gewählt werden, daß das Licht in der Edelsteinschicht mehrfach hin und her reflektiert wird, wodurch eine starke Aufspaltung der spektralen Farben erreicht wird.In the edge areas of the carrier of the gemstone layer other pyramid angles can be set than in the middle area. However, it is also possible to align the reflective surfaces (facets) on the underside of the layer with different angles in order to adjust the brilliance and the fire independently of one another in this way. The angles of the facets can be selected so that the light is reflected back and forth several times in the gemstone layer, whereby a strong splitting of the spectral colors is achieved.
Am einfachsten ist es, durch einen einzigen Ätzangriff auf der gesamten Oberfläche des Trägers gleiche Winkel einzubringen, die z. B. etwa einen Pyramidenöffnungswinkel von 109 aufweisen. Dieser Winkel läßt sich durch Ätzprozeduren leicht erreichen. Vor der Ätzprozedur kann die Oberfläche des Trägers einer Laserschädigung unterworfen werden, um die gewünschte Geometrie leicht zu erreichen.The easiest way is to introduce the same angle on the entire surface of the carrier by a single etching attack, which z. B. have a pyramid opening angle of 109. This angle can easily be achieved by etching procedures. Before the etching procedure, the surface of the carrier can be subjected to laser damage in order to easily achieve the desired geometry.
Es können auch andere Orientierungen als (100) oder (111) Wafer zum Einsatz kommen. Maßgebend ist, das gezielt eingestellte Zusammenspiel von Kristallorientierung der Edelsteinschicht und Richtung des Ätzangriffs, um einen optimalen optischen Effekt zu erreichen. In einer polykristallinen, z. B. nach dem CVD-Verfahren hergestellten künstlichen Diamantschicht sind im Gegensatz zu einem Diamanteinkristall noch Korngrenzen vorhanden, die durch einen abweichenden Brechungsindex als zusätzlich brechende Bereiche zu berücksichtigen sind. Das hat zur Folge, daß die Korngrenzen vorteilhafterweise in ihrer Struktur z. B. säulenartig ausgerichtet sein müssen, um einen positiven Effekt auf Brillanz und Feuer zu haben. In jedem Fall muß der Einfluß der Korngrenzen beim optischen Effekt berücksichtigt werden.Orientations other than (100) or (111) wafers can also be used. What matters is that Targeted interaction of crystal orientation of the gem layer and direction of the etching attack in order to achieve an optimal optical effect. In a polycrystalline, e.g. B. in contrast to a diamond single crystal, there are still grain boundaries, which are to be considered as additional refractive areas due to a different refractive index. As a result, the grain boundaries advantageously in their structure, for. B. must be aligned columnar to have a positive effect on brilliance and fire. In any case, the influence of the grain boundaries must be taken into account in the optical effect.
Bei einer einfachen Pyramidenform kann das Licht auch dadurch zurückgestreut werden, daß die Rückseite bzw. Unterseite des Gasphasen-Edelsteines, insbesondere CVD-Diamanten zusätzlich z. B. durch Gold oder Titan verspiegelt wird. Dann erfolgt die Reflexion einfach durch Spiegelung an der Gold- oder Titanoberfläche. Um der Brillanz und dem Feuer von Einkristallbrillanten möglichst nahe zu kommen, ist eine achteckige Form der Oberfläche der künstlichen Diamantschicht vorteilhaft, die nachträglich in diese eingeschliffen wird. Dabei sind die Winkel in der Unterseite an die geänderten Austrittsverhältnisse anzupassen.In the case of a simple pyramid shape, the light can also be scattered back in that the back or underside of the gas phase gemstone, in particular CVD diamonds, is additionally z. B. is mirrored by gold or titanium. Then the reflection takes place simply by reflection on the gold or titanium surface. In order to get as close as possible to the brilliance and fire of single-crystal brilliants, an octagonal shape of the surface of the artificial diamond layer is advantageous, which is subsequently ground into it. The angles in the underside have to be adapted to the changed exit conditions.
Diese mit einer durch Gasphasenabscheidung erhaltenen Edelsteinschicht versehenen Träger können als Schmucksteine in herkömmlicher Weise, z. B. im Metallkörper eines Schmuckstückes gefaßt werden.These provided with a layer of precious stones obtained by gas phase deposition can be used as gemstones in a conventional manner, for. B. in the metal body of a piece of jewelry.
Die die niedergeschlagene Edelsteinschicht tragende Fläche des Trägers oder Substrates muß nicht eben sein; sie kann z. B. konvex sein, um künstliche Schmucksteine in Gestalt eines Cabochon oder Boutton zu erhalten.The surface of the substrate or substrate bearing the deposited gem layer does not have to be flat; it can e.g. B. be convex to obtain artificial gemstones in the form of a cabochon or boutton.
Mit der Erfindung lassen sich künstliche Schmucksteine, insbesondere Diamanten nicht mit nur besonderen optischen Eigenschaf en wie Brillanz und Feuer, sondern auch mit Oberflächendimensionen, z. B. durch Mehrfach- dimensionierung, gewinnen, wie sie mit den in der Natur vorkommenden Steinen nicht annähernd erreichbar sind und auch mit anderen Syntheseverfahren, insbesondere der Hochdruck-Hochtemperatur-Technik aus ökonomisch-technischen Gründen nicht zu erhalten sind. Den erfindungsgemäßen Edelsteinen kann bei der Herstellung durch die Zusammensetzung der Gasphase eine eigene Körperfarbe (z. B. Blau durch Bor oder Gelb durch Stickstoff) verliehen werden, was deren Einsatz bei jedem nur denkbaren Schmuckstück oder jeder denkbaren Verzierung mit Edelsteinen ermöglicht.With the invention, artificial gemstones, in particular diamonds, not only with special optical properties such as brilliance and fire, but also with surface dimensions, e.g. B. by multiple dimensioning, gaining how they are not nearly attainable with the stones occurring in nature and also cannot be obtained with other synthetic processes, in particular the high-pressure, high-temperature technology, for economic and technical reasons. The gemstones according to the invention can be given their own body color (e.g. blue by boron or yellow by nitrogen) during manufacture by the composition of the gas phase, which enables their use in any conceivable piece of jewelry or any conceivable decoration with gemstones.
Ein Ausführungsbeispiel des erfindungsgemäßen Schmucksteines wird noch an Hand der Zeichnungen beschrieben. Es zeigen:An embodiment of the gem according to the invention will be described with reference to the drawings. Show it:
Fig. 1: Eine schematische Seitenansicht der Edelsteinschicht eines Schmucksteines.Fig. 1: A schematic side view of the gem layer of a gem.
Fig. 2: Eine schematische Ansicht des Bereiches Y der Fig. 1 im vergrößerten Maßstab. Fig. 3: Eine schematische Draufsicht auf die Edelsteinschicht nach Fig. 1.Fig. 2: A schematic view of area Y of FIG. 1 on an enlarged scale. 3: A schematic top view of the gem layer according to FIG. 1.
Fig. 4: Eine schematische Ansicht der Edelsteinschicht nach Fig. 1 von unten.Fig. 4: A schematic view of the gem layer according to Fig. 1 from below.
Fig. 5: Eine schematische Ansicht des Bereiches X der Fig. 4 im vergrößerten Maßstab.Fig. 5: A schematic view of area X of Fig. 4 on an enlarged scale.
In den Zeichnungen ist aus Gründen der Vereinfachung und Klarheit nur die Edelsteinschicht 1 ohne deren Träger dargestellt, dessen an die Edelsteinschicht 1 angrenzende Seite spiegelbildlich geformt ist.In the drawings, for the sake of simplicity and clarity, only the gemstone layer 1 is shown without its carrier, the side of which adjoins the gemstone layer 1 is formed in mirror image.
Die Edelsteinschicht 1 weist auf der Unterseite eine Vielzahl von pyramidenförmigen Erhebungen 2 mit einem Winkel "A" auf und ist an ihrer Oberseite mit einem Achtkantfacettenschliff versehen.The gemstone layer 1 has a multiplicity of pyramid-shaped elevations 2 with an angle "A" on the underside and is provided with an octagonal facet cut on its top.
Die auf dem nicht dargestellten Träger fest haftende und geschliffene Edelsteinschicht 1 bildet den erfindungsgemäßen Schmuckstein, der in einem Schmuckstück, z. B. einem Ring, gefaßt werden kann.The polished and polished gem layer 1 adhering to the carrier (not shown) forms the gem according to the invention, which is in a piece of jewelry, z. B. a ring can be taken.
Der Träger, auf den die Edelsteinschicht aufgebracht wird, muß nicht die Abmessungen des späteren Schmucksteines haben. Von einem großflächigen Träger mit Edelsteinschicht können Teile abgetrennt und zu einem Schmuckstein ver- bzw. bearbeitet werden. The carrier to which the gemstone layer is applied does not have to have the dimensions of the later gem. Parts can be separated from a large-area carrier with a layer of precious stones and processed or processed into a gem.

Claims

Patentansprüche claims
1. Schmuckstein, gekennzeichnet durch einen vorzugsweise tafelförmigen Träger, dessen eine Oberfläche mindestens eine pyramidenförmige Vertiefung aufweist und eine durch Gasphasenabscheidung erhaltene Edelsteinschicht (1) trägt.1. gemstone, characterized by a preferably tabular support, the surface of which has at least one pyramid-shaped depression and carries a gemstone layer (1) obtained by gas phase deposition.
2. Schmuckstein nach Anspruch 1, dadurch gekennzeichnet, daß der Träger ein Siliziumwafer ist.2. Gem according to claim 1, characterized in that the carrier is a silicon wafer.
3. Schmuckstein nach Anspruch 2, dadurch gekennzeichnet, daß der Träger ein (100) oder (111) Wafer ist .3. Gemstone according to claim 2, characterized in that the carrier is a (100) or (111) wafer.
4. Schmuckstein nach Anspruch 1, dadurch gekennzeichnet, daß der Träger aus Edelmetall besteht.4. Gemstone according to claim 1, characterized in that the carrier consists of precious metal.
5. Schmuckstein nach Anspruch 1, dadurch gekennzeichnet, daß der Träger aus Hartmetall besteht.5. Gemstone according to claim 1, characterized in that the carrier consists of hard metal.
6. Schmuckstein nach Anspruch 1, dadurch gekennzeichnet, daß der Träger aus einem Refraktärmetall wie Wolfram oder Molybdän besteht.6. Gemstone according to claim 1, characterized in that the carrier made of a refractory metal such as Tungsten or molybdenum exists.
7. Schmuckstein nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die pyramidenförmigen Vertiefungen mechanisch, z. B. durch Schleifen oder Prägen, erhalten wurden.7. Gem according to one of claims 1 to 6, characterized in that the pyramid-shaped recesses mechanically, for. B. were obtained by grinding or embossing.
8. Schmuckstein nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die pyramidenförmigen Vertiefungen durch Ätzen erhalten wurden.8. Gemstone according to one of claims 1 to 6, characterized in that the pyramid-shaped depressions were obtained by etching.
9. Schmuckstein nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Pyramidenwinkel der Vertiefungen eines Trägers verschieden sind .9. Gemstone according to one of the preceding claims, characterized in that the pyramid angle of the recesses of a carrier are different.
10. Schmuckstein nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Pyramidenwinkel der Vertiefungen etwa 109 beträgt.10. Gemstone according to one of the preceding claims, characterized in that the pyramid angle of the depressions is approximately 109.
11. Schmuckstein, nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Korngrenzen der Edelsteinschicht (1) säulenartig ausgerichtet sind .11. Gem stone according to one of the preceding claims, characterized in that the grain boundaries the gem layer (1) are aligned in a columnar manner.
12. Schmuckstein nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die pyramidenförmigen Vertiefungen verspiegelt sind.12. Gemstone according to one of the preceding claims, characterized in that the pyramid-shaped depressions are mirrored.
13. Schmuckstein nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Oberfläche der Edelsteinschicht (1) geschliffen ist.13. Gemstone according to one of the preceding claims, characterized in that the surface of the gemstone layer (1) is ground.
14. Schmuckstein nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Edelsteinschicht (1) durch Dotierung eine Körperfarbe aufweist .14. Gemstone according to one of the preceding claims, characterized in that the gemstone layer (1) has a body color by doping.
15. Schmuckstein nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die die Edelsteinschicht (1) tragende Fläche des Trägers gekrümmt ist. 15. Gemstone according to one of the preceding claims, characterized in that the gemstone layer (1) bearing surface of the carrier is curved.
EP98952636A 1997-09-30 1998-09-23 Decorative stone Expired - Lifetime EP0987966B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE29717496U 1997-09-30
DE29717496 1997-09-30
PCT/EP1998/006074 WO1999016328A1 (en) 1997-09-30 1998-09-23 Decorative stone

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EP0987966A1 true EP0987966A1 (en) 2000-03-29
EP0987966B1 EP0987966B1 (en) 2002-02-06

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EP (1) EP0987966B1 (en)
JP (1) JP2001509065A (en)
CN (1) CN1167368C (en)
AT (1) ATE212803T1 (en)
CA (1) CA2271736C (en)
DE (1) DE59803021D1 (en)
ES (1) ES2172227T3 (en)
IN (1) IN190683B (en)
RU (1) RU2189769C2 (en)
WO (1) WO1999016328A1 (en)

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US6997014B2 (en) * 2002-11-04 2006-02-14 Azotic Coating Technology, Inc. Coatings for gemstones and other decorative objects
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Also Published As

Publication number Publication date
EP0987966B1 (en) 2002-02-06
US20010049003A1 (en) 2001-12-06
JP2001509065A (en) 2001-07-10
WO1999016328A1 (en) 1999-04-08
CN1241120A (en) 2000-01-12
US6794014B2 (en) 2004-09-21
CA2271736C (en) 2005-06-14
DE59803021D1 (en) 2002-03-21
ATE212803T1 (en) 2002-02-15
CA2271736A1 (en) 1999-04-08
CN1167368C (en) 2004-09-22
ES2172227T3 (en) 2002-09-16
IN190683B (en) 2003-08-16
RU2189769C2 (en) 2002-09-27

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