EP0968538A1 - Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif - Google Patents
Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositifInfo
- Publication number
- EP0968538A1 EP0968538A1 EP98906977A EP98906977A EP0968538A1 EP 0968538 A1 EP0968538 A1 EP 0968538A1 EP 98906977 A EP98906977 A EP 98906977A EP 98906977 A EP98906977 A EP 98906977A EP 0968538 A1 EP0968538 A1 EP 0968538A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- polar molecules
- polymer
- molecules
- layer
- host matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 21
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- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
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- 230000003068 static effect Effects 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 230000009477 glass transition Effects 0.000 claims description 5
- -1 polyparaphenylene Polymers 0.000 claims description 4
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 229920000123 polythiophene Polymers 0.000 claims description 3
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
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- 229920002223 polystyrene Polymers 0.000 claims 1
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- 239000004800 polyvinyl chloride Substances 0.000 claims 1
- 229920006254 polymer film Polymers 0.000 abstract description 4
- 230000010287 polarization Effects 0.000 description 20
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- 229910052782 aluminium Inorganic materials 0.000 description 12
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- 238000010586 diagram Methods 0.000 description 12
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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- 150000002500 ions Chemical class 0.000 description 3
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- 229910052720 vanadium Inorganic materials 0.000 description 3
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- YLYPIBBGWLKELC-UHFFFAOYSA-N 4-(dicyanomethylene)-2-methyl-6-(4-(dimethylamino)styryl)-4H-pyran Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DMLAVOWQYNRWNQ-UHFFFAOYSA-N azobenzene Chemical compound C1=CC=CC=C1N=NC1=CC=CC=C1 DMLAVOWQYNRWNQ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a polymer semiconductor device comprising at least one rectifier function. It relates in particular to the diodes and in particular the photovoltaic and light-emitting diodes. It also relates to devices such as transistors.
- polymer to produce semiconductor devices is technically quite interesting.
- the polymers can be formed by the wet method from a solution, which leads to techniques which are easy to implement, inexpensive and compatible with other techniques.
- junction In order to produce semiconductor devices such as light-emitting diodes and photovoltaic cells, it is usually necessary to make a junction. It may be a Schottky junction obtained by bringing a doped semiconductor into contact with a metal having a rectifier contact with the semiconductor used. It can also be a pn junction obtained by the juxtaposition of a p-type semiconductor and an n-type semiconductor. The junction is said to be homojunction if the semiconductor material is the same for the entire junction. Otherwise, we speak of heterojunction.
- a disadvantage of Schottky diodes produced by the juxtaposition of a metal and a semiconductor polymer is their short lifespan. This is due to the diffusion of the metal in the polymer, at the level of the contact between the two materials, because of the difference in electrochemical potential existing between these two materials.
- a pn junction should allow a priori to correct this drawback. It is produced by juxtaposition of a p-type polymer and an n-type polymer. However, it is extremely difficult to produce such pn junctions because the choice of the different polymers is not always compatible with the requirements of implementation. In addition, n-type polymers are uncommon and often unstable to oxygen.
- the present invention overcomes these drawbacks. It consists in producing a rectifier homojunction gradient equivalent to a pn junction in a single thin layer of polymer which serves as host matrix for appropriately oriented polar molecules. This results in a significant increase in the mobility of the carriers throughout the thickness of the layer, which results in a depletion zone distributed uniformly. This principle significantly improves the performance of junction devices such as light-emitting diodes, solar cells and transistors made from polymers.
- a first object of the present invention therefore consists of a semiconductor polymer device comprising at least one rectifying function, characterized in that the function is performed by a layer of polymer comprised between first and second means forming electrodes, the layer of polymer constituting a host matrix for polar molecules, the polar molecules being oriented electrically in a direction perpendicular to the first and second electrode means, the electric charges of the same sign of the polar molecules being directed towards the same electrode means.
- a second object of the present invention consists of a method for producing a polymer semiconductor device comprising at least one rectifying function, characterized in that it includes the following steps: - formation of a polymer-based layer comprising polar molecules, the polymer constituting a host matrix for the polar molecules, - orientation of the polar molecules in the host matrix so that the electric charges of the same sign of the polar molecules are directed d 'one side.
- FIG. 1 is a current-voltage diagram of a structure comprising a layer of polymer placed between two electrodes,
- FIG. 2 is a diagram representing the variation in the height of the potential barrier between an electrode and the polymer layer of a structure according to the invention as a function of the orientation rate of the polar molecules,
- FIG. 3 is a diagram representing the mobility of the electrons in a structure according to the invention before polarization and for two opposite values of the polarization field
- FIG. 4 represents a side view of a photocell according to the present invention
- FIG. 5 is a perspective view of a photocell device according to the present invention
- FIG. 6 shows, side view, a light emitting diode according to the present invention.
- FIGS. 1, 2 and 3 make it possible to illustrate the principle which is the basis of the present invention. They relate to a symmetrical diode made up of a thin film of semiconductor polymer located between two electrodes of the same kind and comprising polar organic molecules.
- the thin film is a 50/50 (MMA-DR1) copolymer which will be defined below, MMA playing the role of host matrix and DR1 constituting the polar molecules.
- the electrodes are made of aluminum.
- the structure thus formed is perfectly symmetrical as shown by its current-voltage characteristic represented by curve 1 on the diagram in FIG. 1 and recorded at room temperature.
- the principle on which the present invention is based consists in inducing a pn type rectifier diode function by modifying the very nature of the polymer layer situated between the electrodes. The modification is carried out by orientation of the polar molecules in the host matrix. By applying a static electric field to the thin film and simultaneously bringing this thin film to a temperature close to its glass transition temperature Tg, the polar molecules are oriented quantitatively according to the electric field. This orientation is fixed while maintaining the static electric field during the cooling phase of the structure. It is possible to directly link the internal field induced in a polarized structure to the orientation rate of polar molecules.
- V applied voltage
- n ideality factor
- q electron charge
- k Boltzmann constant
- T absolute temperature
- FIG. 2 shows that, by orientation of the molecules, a function equivalent to a pn junction has been produced with an internal potential difference close to 0.2 eV. It is a homojunction gradient distributed over the entire thickness of the polymer film. It can also be seen in FIG. 1 that in addition to the rectifier effect (asymmetry of the characteristic), the conductivity of the diode in the on state (positively polarized diode) is significantly increased after orientation of the molecules. This effect is confirmed by measurement of flight time. This measurement makes it possible to determine the type of conduction of a material
- FIG. 3 shows the results obtained for the mobility of the electrons before and after orientation of the molecules for two opposite values of applied polarization field at 130 ° C. Mobility in the diagram in Figure 3 is plotted against electric field E applied during the measurement.
- the mobility law ⁇ ⁇ 0 .exp [(E / E 0 ) l / 2 ]
- the mobility ⁇ of the electrons is plotted on the ordinate axis and the electric field E on the abscissa axis.
- the triangle-shaped sign represents the mobility of the electrons before polarization under an electric field
- the square-shaped sign represents the mobility of the electrons after polarization resulting from the application of a negative voltage of 100 V, for 5 mm and at 130 ° C
- the sign in the shape of a circle represents the mobility of the electrons after polarization resulting from the application of a positive voltage of 100 V, for 5 mm and at 130 ° C.
- the diagram in FIG. 3 shows that, by orientation of the molecules, the electronic mobility ⁇ 0 in the passing direction without an applied external field is increased by a factor of 4. This effect is fundamental for the performance of semiconductor devices of the photocell and diode type. electroluminescent.
- active organic molecules derived from the field of quadratic nonlinear optics. They are of the "push-pull" type, that is to say that they have both an electron donor group (of the ammo type) and an electron acceptor group (of the nitro type), separated l 'from one another by one or more groups comprising conjugated ⁇ electron systems, therefore capable of moving over several atoms (diazobenzene in the case of DR1 molecule, for example).
- This type of molecule is widely described in "Molecular Nonlinear Optics: materials, physics and devices", edited by J. ZYSS at Académie Press, Inc. (1994), "Organic Nonlinear Optical Materials", Vol. 1, by Ch.
- DR1 Disperse Red 1
- This molecule can be used in a solar cell as a photo-generator of charges.
- DCM 4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) - 4H-pyrane (Exciton) which has the following chemical structure:
- This molecule can be used in a light-emitting diode as a red light emitter at 620 nm.
- the polymer which should be used is advantageously soluble. It must have significant carrier mobility after inclusion of the active molecules by doping or by grafting to the main chain. They may be semiconductor polymers such as those described in "Handbook of conductive g polymers", published in two volumes by SKOTHEIM in 1986 by Marcel Dekker. Soluble derivatives of polythiophene (PT), polyparaphenylene (PPP), and polyparaphenylenevmylene (PPV) are some examples. It can also be polymers which become semiconductor by doping, for example polymethylmethacrylate (PMMA), polyvmylcarbazole (PVK), polycarbonate (PC), polystyrene (PS), and polyvmylchloride (PVC).
- PMMA polymethylmethacrylate
- PVK polyvmylcarbazole
- PC polycarbonate
- PS polystyrene
- PVC polyvmylchloride
- PMMA polymethylmethacrylate
- the active molecule can be chemically attached (grafted) to the polymer.
- the DR1-MMA copolymer grafts at 50 ° into moles of chromophores (DR1-MMA 50/50) is obtained by radical polymerization from a solution of methylmethacrylate (MMA) and N-ethyl-N- (methacryloxyethyl) -4 '-ammo-4-n ⁇ troazobenzene (derivative of DR1).
- MMA methylmethacrylate
- This material has a glass transition temperature close to 132 ° C. Its formula is as follows:
- the semiconductor device according to the present invention allows in particular the production of a solar cell (photovoltaic cell).
- a conventional embodiment of a solar cell is described in the article "Organic Solar Cells" by D. OHRLE and D. MEISSNER, published in Advanced Materials, Vol. 3 (1991), n ° 3, pages 129-138.
- the photocell according to the invention is shown diagrammatically in FIG. 4. It comprises a transparent substrate 10, for example made of glass, supporting a transparent electrode 11, for example made of mixed tin and indium oxide (ITO electrode).
- An organic semiconductor layer 12 consisting of a polymer including polar molecules is included between the transparent electrode 11 and a metal electrode 13, for example made of aluminum.
- the electrodes 11 and 13 are respectively connected to output terminals 14 and 15.
- the light is absorbed by the transparent face of the photodiode. Electric charges are then photo-generated near the transparent electrode 11 - polymer layer 12 interface.
- the electric field internal to the structure which is induced by the orientation of the polar molecules contained in the polymer host matrix, promotes separation of charges and the displacement of one of the carriers towards the aluminum electrode. A current is then generated.
- a substrate constituted by a standard glass slide, covered with ITO (treatment Conduct 013 A from Balzers) with a resistance equal to 13 ⁇ / D, and a thickness equal to 1 mm.
- the conductive coating is then severe by laser attack according to the configuration illustrated in FIG. 5 or the reference 20 designates the glass slide.
- the laser ablation divides the conductive and transparent coating into three parts 21, 22 and 23.
- TDF4 conventional detergent
- the parts 21, 22 and 23 are rinsed with distilled water and then undergo several treatment cycles with ultrasound.
- the substrate formed by the glass slide and its conductive coating is then heated in an oven at 400 ° C. so as to remove any residual organic impurities by pyrolysis.
- the organic film is obtained by centrifuging the polymer solution on the substrate (spinning deposit).
- the thickness of the layer and its homogeneity depend on the parameters of rotation of the spinner and on the viscosity of the solution.
- the device is set to double speed.
- Films of 0.13 ⁇ m thickness are obtained from a 50/50 a copolymer solution (MMA-DRl) 30 g / 1 in tr ⁇ chloro-1, 1, 2-ethane.
- the solution is filtered at the time of deposition through a 0.5 ⁇ m filter.
- the cent ⁇ fugation parameters are as follows: Deposit phase: first acceleration:
- the substrate covered with the thin film is annealed for 15 minutes at 80 ° C., which makes it possible to remove the residual solvent.
- the thickness is measured using a Veeco profilometer model Dektak 3ST.
- the effect of the DR1 dye is that the majority charge carriers in the 50/50 (MMA-DRl) copolymer are the electrons (n-type material). Their mobility is therefore increased by orienting the chromophores of DR1 with their electron donor group (ammo) on the side of the ITO coating and their electron acceptor group (nitro) on the side of the aluminum electrode. This is achieved by applying the positive value of the voltage V to the ITO coating during the polarization phase. More generally, for a polymer film of the same composition and of different thickness, the device will be polarized with a voltage V close to 100 V / ⁇ m.
- the photocell thus described generates a current of electrons at the aluminum electrode when it is illuminated in white light on the transparent face.
- the semiconductor device according to the present invention also allows the production of a light-emitting diode.
- a conventional embodiment of light-emitting diode is described in the article "Blue light-emittmg diodes with doped polymers" by E. GAUTIER, J. -Mr. NUNZI, C. SENTEIN, A. LORIN and P. RAIMOND publishes in Synthetic Metals, Vol. 81, 1996, p. 197-200.
- FIG. 6 A light-emitting diode according to the present invention is shown diagrammatically in FIG. 6. Its structure is identical to that of FIG. 4. It comprises a transparent substrate 30, for example made of glass, supporting a transparent electrode 31, for example an ITO electrode. An organic semiconductor layer 32 consisting of a polymer including polar molecules is included between the transparent electrode 31 and a metal electrode 33, for example made of aluminum. The electrodes 31 and 33 are respectively connected to input terminals 34 and 35. In operation, light, indicated by arrows in FIG. 6, is emitted through the transparent face of the light-emitting diode.
- Light-emitting diode structures can also be produced according to the arrangement shown in FIG. 5.
- the organic mmce film can be obtained from a mixture of the PMMA polymer at 30 g / 1 in tr ⁇ chloro-1, 1, 2-ethane with the DCM molecule at 5 ° by mass of PMMA (1.5 g / 1 of solution).
- organic films 0.1 ⁇ m thick can be obtained.
- the aluminum electrodes are also deposited as described above.
- the polarization of the device is also done in the manner indicated above.
- the light-emitting diode thus described emits red light at 620 nm from the transparent electrode when it is subjected to a voltage greater than 20 V (positive on the transparent electrode).
- the active organic layer can be produced by mixing different polymers and different molecules. Likewise, these different species can be chemically linked (copolymer).
- the transparent substrate can be ordinary glass, but any other transparent dielectric material is suitable, for example transparent plastics such as polycarbonate, PMMA. These plastic materials allow the production of flexible devices (in sheets, rolls, etc.).
- the electrode adjacent to this substrate may be made of medium oxide, of mixed oxide of etam and medium or may be made of a thin film of transparent conductive polymer in the useful light field, for example of the polyaniline (Pani, distributed by Monsanto) or PEDT type (distributed by Bayer), or else be made of a metallic thin film ( aluminum, gold, silver, ...) deposited by evaporation and with a thickness close to 10 to 50 nm.
- the upper electrode is advantageously a thin metallic film deposited by evaporation (aluminum, gold, silver, magnesium, etc.).
- this electrode can be opaque or semi-transparent.
- a static electric field to a thin film. We can polarize thanks to electrodes evaporated on the substrate then on the film. This is the method used above. This field can also be applied by depositing on the film, which is generally highly resistive, ions created by the Corona effect near a point or a metallic wire. This is the method that polarizes the cylinders of laser printers. Polarization can also be carried out cold, when it is optically assisted.
- the technique of polarization by electrodes consists in applying an electric field by means of electrodes placed on either side of the film.
- the lower electrode may simply be a conductive substrate (doped silicon for example), a metal electrode evaporated on the substrate before the deposition of the organic film, or a transparent electrode (ITO) depending on the type of device to be produced.
- the upper electrode is a thin metallic film deposited by evaporation.
- the direct and precise access to the value of the electric field applied to the film constitutes the essential advantage of this method.
- it is a method applicable to the device as it is produced.
- the material at the time of polarization By bringing the material at the time of polarization to a temperature close to its glass transition temperature, the mechanical stresses imposed by the polymer chains constituting the matrix decrease and this leads to the orientation of the doping molecules. It is then necessary to maintain the static field during the cooling phase of the sample, before cutting it at room temperature to freeze the orientation of the molecules.
- orientation can be achieved without heating, by applying a light beam absorbed by the molecules, which beam produces an effect equivalent to heating.
- polarization can also be carried out by the Corona effect.
- the application of an electrical potential on a metal surface with a small radius of curvature (tip) results in the creation of a high surface density of charges at the convex interface.
- the electric flow is therefore concentrated near this point, leading to the ionization of a gas present near the interface.
- the appearance of ions in the gas increases its conductivity, and an electric discharge appears when the voltage applied to the gas exceeds the value of the dielectric breakdown voltage.
- Corona polarization consists of depositing these ions on the thin film to polarize it.
- the substrates to be used are the same as for the previous method.
- the metallic upper electrode will then be deposited, once the polarization has been achieved.
- the substrate and / or the lower electrode may be opaque.
- the upper electrode is then necessarily transparent or semi-transparent. It can be carried out by cathodic deposition of ITO or deposition of a metallic thin film of thickness close to 10 to 50 nm (aluminum, gold, silver, etc.).
- the advantage of such a type of device is that it can be produced by deposition on a film flexible aluminum type substrate Mylar® (distributed by Dupont de Nemours). We then gain a production step, that relating to the deposition of the lower electrode.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
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- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9701485 | 1997-02-10 | ||
FR9701485A FR2759495B1 (fr) | 1997-02-10 | 1997-02-10 | Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif |
PCT/FR1998/000212 WO1998035393A1 (fr) | 1997-02-10 | 1998-02-05 | Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif |
Publications (1)
Publication Number | Publication Date |
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EP0968538A1 true EP0968538A1 (fr) | 2000-01-05 |
Family
ID=9503506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98906977A Withdrawn EP0968538A1 (fr) | 1997-02-10 | 1998-02-05 | Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif |
Country Status (4)
Country | Link |
---|---|
US (1) | US6545290B2 (fr) |
EP (1) | EP0968538A1 (fr) |
FR (1) | FR2759495B1 (fr) |
WO (1) | WO1998035393A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1328068C (zh) * | 2001-04-27 | 2007-07-25 | 3M创新有限公司 | 制作有机场致发光/电子器件的工艺、施主片及其制作方法 |
US7297621B2 (en) | 2003-04-15 | 2007-11-20 | California Institute Of Technology | Flexible carbon-based ohmic contacts for organic transistors |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2344691A (en) * | 1998-12-12 | 2000-06-14 | Sharp Kk | An electroluminescent device |
AT411305B (de) * | 2002-05-22 | 2003-11-25 | Qsel Quantum Solar Energy Linz | Verfahren zur nachbehandlung einer photovoltaischen zelle |
GB0013472D0 (en) * | 2000-06-03 | 2000-07-26 | Univ Liverpool | Ionising radiation detector |
US6677606B1 (en) * | 2000-06-28 | 2004-01-13 | University Of Chicago | Dopa and dopamine modification of metal oxide semiconductors, method for attaching biological molecules to semiconductors |
DE10044842A1 (de) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
US7204425B2 (en) | 2002-03-18 | 2007-04-17 | Precision Dynamics Corporation | Enhanced identification appliance |
DE10255964A1 (de) * | 2002-11-29 | 2004-07-01 | Siemens Ag | Photovoltaisches Bauelement und Herstellungsverfahren dazu |
DE602004020623D1 (de) * | 2003-07-10 | 2009-05-28 | Koninkl Philips Electronics Nv | Elektrische einrichtung und verfahren zur ansteuerung einer organischen diode in einem lichtmesszustand |
JP4676704B2 (ja) * | 2004-02-10 | 2011-04-27 | ソニー株式会社 | 機能性分子素子 |
US20060003487A1 (en) * | 2004-06-30 | 2006-01-05 | Intel Corporation | Low power consumption OLED material for display applications |
EP1794218B1 (fr) * | 2004-10-01 | 2020-05-13 | Merck Patent GmbH | Dispositifs electriques contenant des semiconducteurs organiques |
US7877016B2 (en) * | 2004-10-28 | 2011-01-25 | Infinera Corporation | Photonic integrated circuit (PIC) transceivers for an optical line terminal (OLT) and an optical network unit (ONU) in passive optical networks (PONs) |
US7306963B2 (en) * | 2004-11-30 | 2007-12-11 | Spire Corporation | Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices |
US7514725B2 (en) * | 2004-11-30 | 2009-04-07 | Spire Corporation | Nanophotovoltaic devices |
DE102006059369A1 (de) * | 2006-12-15 | 2008-06-26 | Industrial Technology Research Institute, Chutung | Fotoelement |
NL2022110B1 (en) * | 2018-11-30 | 2020-06-26 | Univ Delft Tech | Electrochemical doping of semiconductor materials |
JP7521735B2 (ja) * | 2020-02-28 | 2024-07-24 | 株式会社デンソー | 発電デバイス |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1186785A (fr) * | 1982-09-07 | 1985-05-07 | Her Majesty The Queen, In Right Of Canada, As Represented By The Minister Of National Defence | Pile solaire avec semiconducteur a electret |
FR2605167B1 (fr) * | 1986-10-10 | 1989-03-31 | Thomson Csf | Capteur d'images electrostatique |
US5126214A (en) * | 1989-03-15 | 1992-06-30 | Idemitsu Kosan Co., Ltd. | Electroluminescent element |
US5206525A (en) * | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
CA2122328C (fr) * | 1993-04-28 | 1999-01-19 | Hideyuki Murata | Dispositif electroluminescent en couches minces |
US5834130A (en) * | 1994-05-26 | 1998-11-10 | Sumitomo Electric Industries, Ltd. | Organic electroluminescent device |
FR2726097B1 (fr) * | 1994-10-25 | 1996-11-15 | Commissariat Energie Atomique | Cellule electro-optique a mode transverse electrique pour un modulateur et procede de realisation d'une telle cellule |
US5814416A (en) * | 1996-04-10 | 1998-09-29 | Lucent Technologies, Inc. | Wavelength compensation for resonant cavity electroluminescent devices |
US5729641A (en) * | 1996-05-30 | 1998-03-17 | Sdl, Inc. | Optical device employing edge-coupled waveguide geometry |
US5895932A (en) * | 1997-01-24 | 1999-04-20 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
-
1997
- 1997-02-10 FR FR9701485A patent/FR2759495B1/fr not_active Expired - Fee Related
-
1998
- 1998-02-05 US US09/355,923 patent/US6545290B2/en not_active Expired - Fee Related
- 1998-02-05 WO PCT/FR1998/000212 patent/WO1998035393A1/fr active Application Filing
- 1998-02-05 EP EP98906977A patent/EP0968538A1/fr not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO9835393A1 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1328068C (zh) * | 2001-04-27 | 2007-07-25 | 3M创新有限公司 | 制作有机场致发光/电子器件的工艺、施主片及其制作方法 |
US7297621B2 (en) | 2003-04-15 | 2007-11-20 | California Institute Of Technology | Flexible carbon-based ohmic contacts for organic transistors |
Also Published As
Publication number | Publication date |
---|---|
FR2759495A1 (fr) | 1998-08-14 |
FR2759495B1 (fr) | 1999-03-05 |
WO1998035393A1 (fr) | 1998-08-13 |
US6545290B2 (en) | 2003-04-08 |
US20030010973A1 (en) | 2003-01-16 |
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