EP0962035B1 - Laser device - Google Patents

Laser device Download PDF

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Publication number
EP0962035B1
EP0962035B1 EP98912273A EP98912273A EP0962035B1 EP 0962035 B1 EP0962035 B1 EP 0962035B1 EP 98912273 A EP98912273 A EP 98912273A EP 98912273 A EP98912273 A EP 98912273A EP 0962035 B1 EP0962035 B1 EP 0962035B1
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EP
European Patent Office
Prior art keywords
semiconductor laser
laser device
cylindrical lens
carrier part
laser chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP98912273A
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German (de)
French (fr)
Other versions
EP0962035A1 (en
Inventor
Stefan GRÖTSCH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of EP0962035A1 publication Critical patent/EP0962035A1/en
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering

Definitions

  • the invention relates to a laser device in which a body emitting laser radiation and at least an element for beam guidance or beam imaging of the laser radiation are arranged in a common housing. It relates in particular to a laser device with a Semiconductor laser chip, in particular a power semiconductor laser bar, and a cylindrical lens for focusing the laser radiation emitted by the semiconductor laser chip, in which the semiconductor laser chip on a base support part attached and the cylindrical lens in front of a beam exit surface of the semiconductor laser chip is arranged.
  • Beam guidance e.g. an optical fiber
  • beam imaging e.g. a lens and / or a mirror
  • Beam guidance e.g. an optical fiber
  • beam imaging e.g. a lens and / or a mirror
  • a V-shaped groove is provided for mounting the cylindrical lens in this known device.
  • PATENT ABSTRACTS OF JAPAN vol. 005, no. 198 (E-087), December 16, 1981; & JP 56 120177 A (TOSHIBA CORP), September 21, 1981 describes a device in which a light emitting Semiconductor body and a spherical lens are arranged in a common housing, the Lens is attached by means of a silicone layer in the housing.
  • the present invention is based on the object To develop a laser device of the type mentioned at the outset, which is a simpler assembly of the element for beam guidance or beam imaging and in which a connecting means provided between the element and its mounting surface is able to withstand high strains without plastic fatigue and withstands laser radiation very well.
  • the element for beam guidance or Beam imaging is fixed in the housing by means of silicone.
  • Advantageous further developments of the laser device according to the invention are the subject of subclaims 2 to 10.
  • the body emitting laser radiation is a semiconductor laser chip, that is between the semiconductor laser chip and the base member provided intermediate support part Molybdenum lead frame, which is created by means of phototechnical structuring a molybdenum layer applied to the base part (e.g. sputter, vapor deposition or electroplating layer) is manufactured or as a prefabricated part (as Lead frame) on the base support part, for example by means of a Braze layer is attached.
  • a molybdenum layer applied to the base part e.g. sputter, vapor deposition or electroplating layer
  • a prefabricated part as Lead frame
  • molybdenum can be another electrically conductive material with a high modulus of elasticity, high yield stress and high temperature resistance be used. Examples include W, CuW and CuMo alloys (Cu content between 10 and 20%). All of the above materials can be used as Foil as well as a sputter, vapor deposition or electroplating layer manufacture and have good thermal conductivity.
  • the laser device according to the invention is described below an embodiment in connection with the figure explained in more detail.
  • the figure shows a schematic representation a vertical section through the embodiment.
  • an intermediate carrier part 8, on which a semiconductor laser chip 2 is located, is fastened on a base carrier part 5 of a housing 19.
  • the base support part 5 consists, for example, of copper and the intermediate support part 8 of molybdenum.
  • the semiconductor laser chip 2 is, for example, a power semiconductor laser bar which, in operation, emits a plurality of individual laser beams 4 which are strip-shaped in cross section and arranged alongside one another on a straight line and which consists of Al x Ga 1-x As (0 ⁇ x 1 1).
  • This semiconductor laser chip 2 is connected to the intermediate carrier part 8, for example, by means of a hard solder layer 12 (eg consisting of Au-Sn solder).
  • connection plate 11 On the top of the semiconductor laser chip 2 is a connection plate 11 attached as a second electrical connection is provided for the semiconductor laser chip 2.
  • the connection plate 11 preferably consists of the same material as the intermediate support part 8 and is z. B. also by means of a Braze layer 13 (e.g. consisting of Au-Sn solder) on the Semiconductor laser chip 2 attached.
  • Intermediate carrier part 8 is also preferably by means of a braze layer 14 attached to the base support member 5.
  • a cylindrical lens 3 is also on the base support part 5 arranged, the flattened on opposite sides Side faces 7.17.
  • the cylindrical lens 3 lies with one of the flattened side surfaces 7 on the base support part 5 on and with one of the beam exit surface 6 of the Semiconductor laser chip 2 facing curved side surface the two spacer parts 9, 10 and is by means of a Silicone layer 18 attached to the base member 5. Silicone adhesives withstand laser radiation very well and survive very high strains without plastic without damage Fatigue.
  • the glass fiber pieces can be used for Example stacked in a horde and by both Pages with a conventional optical coating be provided.
  • the flattened side surfaces ensure that the remunerated areas at the next Handling the cylindrical lenses 3 must not be rotated.
  • the cylindrical lens 3 is ground in such a way that its apex exactly at the level of the radiation-emitting area 16 of the semiconductor laser chip fastened on the intermediate carrier part 8 2 lies.
  • the focus between the semiconductor laser chip 2 and the cylindrical lens 3 is through the spacer parts 9, 10 of the intermediate support part 8 is fixed.
  • a particular advantage of the laser device according to the invention 1 is that the cylindrical lens 3 without the semiconductor laser chip 2 to operate, compared to the semiconductor laser chip 2 adjusted and then on the base support part 5 can be assembled and no longer in several degrees of freedom must be aligned.

Description

Die Erfindung bezieht sich auf eine Laservorrichtung, bei der ein eine Laserstrahlung aussendender Körper und mindestens ein Element zur Strahlführung oder Strahlabbildung der Laserstrahlung in einem gemeinsamen Gehäuse angeordnet sind. Es bezieht sich insbesondere auf eine Laservorrichtung mit einem Halbleiterlaserchip, insbesondere einem Leistungs-Halbleiterlaser-Barren, und einer Zylinderlinse zur Fokussierung der von dem Halbleiterlaserchip ausgesandten Laserstrahlung, bei der der Halbleiterlaserchip auf einem Grundträgerteil befestigt und die Zylinderlinse vor einer Strahlaustrittsfläche des Halbleiterlaserchips angeordnet ist.The invention relates to a laser device in which a body emitting laser radiation and at least an element for beam guidance or beam imaging of the laser radiation are arranged in a common housing. It relates in particular to a laser device with a Semiconductor laser chip, in particular a power semiconductor laser bar, and a cylindrical lens for focusing the laser radiation emitted by the semiconductor laser chip, in which the semiconductor laser chip on a base support part attached and the cylindrical lens in front of a beam exit surface of the semiconductor laser chip is arranged.

Bislang wird bei derartigen Vorrichtungen das Element zur Strahlführung (z. B. ein Lichtwellenleiter) oder Strahlabbildung (z. B. eine Linse und/oder ein Spiegel) meist sehr aufwendig mittels eines Glaslotes oder eines metallischen Lotes im Gehäuse befestigt.So far, the element for such devices Beam guidance (e.g. an optical fiber) or beam imaging (e.g. a lens and / or a mirror) is usually very complex by means of a glass solder or a metallic solder fixed in the housing.

PATENT ABSTRACTS OF JAPAN vol. 006, no. 164 (E-127), 27. August 1982; & JP 57 084189 A (NEC CORP), 26. Mai 1982, beschreibt eine Halbleiterlaservorrichtung gemäß dem Oberbegriff des Anspruchs 1. Zur Lagerung der Zylinderlinse ist in dieser bekannten Vorrichtung eine V-förmige Nut vorgesehen. PATENT ABSTRACTS OF JAPAN vol. 005, no. 198 (E-087), 16. Dezember 1981; & JP 56 120177 A (TOSHIBA CORP), 21. September 1981, beschreibt eine Vorrichtung, bei der ein Licht aussendender Halbleiterkörper und eine sphärische Linse in einem gemeinsamen Gehäuse angeordnet sind, wobei die Linse mittels einer Silikonschicht in dem Gehäuse befestigt ist.PATENT ABSTRACTS OF JAPAN vol. 006, no. 164 (E-127), August 27, 1982; & JP 57 084189 A (NEC CORP), May 26, 1982, describes a semiconductor laser device according to the preamble of the claim 1. A V-shaped groove is provided for mounting the cylindrical lens in this known device. PATENT ABSTRACTS OF JAPAN vol. 005, no. 198 (E-087), December 16, 1981; & JP 56 120177 A (TOSHIBA CORP), September 21, 1981, describes a device in which a light emitting Semiconductor body and a spherical lens are arranged in a common housing, the Lens is attached by means of a silicone layer in the housing.

Der vorliegenden Erfindung liegt die Aufgabe zu Grunde, eine Laservorrichtung der eingangs genannten Art zu entwickeln, die eine einfachere Montage des Elements zur Strahlführung oder Strahlabbildung ermöglicht und bei der ein Verbindungsmittel zwischen dem Element und dessen Montagefläche vorgesehen ist, das hohe Dehnungen ohne plastisches Ermüden übersteht und Laserbestrahlung sehr gut standhält.The present invention is based on the object To develop a laser device of the type mentioned at the outset, which is a simpler assembly of the element for beam guidance or beam imaging and in which a connecting means provided between the element and its mounting surface is able to withstand high strains without plastic fatigue and withstands laser radiation very well.

Diese Aufgabe wird durch eine Laservorrichtung mit den Merkmalen des Anspruches 1 gelöst.This task is accomplished by a laser device with the features of claim 1 solved.

Erfindungsgemäß ist das Element zur Strahlführung oder Strahlabbildung mittels Silikon in dem Gehäuse befestigt ist. Vorteilhafte Weiterbildungen der erfindungsgemäßen Laservorrichtung sind Gegenstand der Unteransprüche 2 bis 10.According to the invention, the element for beam guidance or Beam imaging is fixed in the housing by means of silicone. Advantageous further developments of the laser device according to the invention are the subject of subclaims 2 to 10.

Bei einer besonders bevorzugten Ausführungsform der Laservorrichtung, bei dem der eine Laserstrahlung aussendende Körper ein Halbleiterlaserchip ist, ist das zwischen dem Halbleiterlaserchip und dem Grundträgerteil vorgesehene Zwischenträgerteil ein Molybdän-Anschlussrahmen, der mittels phototechnischem Strukturieren einer auf dem Grundträgerteil aufgebrachten Molybdänschicht (z. B. Sputter-, Aufdampf- oder Galvanikschicht) hergestellt ist oder als vorgefertigtes Teil (als Leadframe) auf dem Grundträgerteil beispielsweise mittels einer Hartlotschicht befestigt ist. Dies hat den besonderen Vorteil, dass mechanische Spannungen auf Grund von unterschiedlichen thermischen Ausdehnungen des Halbleiterlaserchips und des Grundträgerteils, das beispielsweise als Wärmesenke dient und z. B. aus Kupfer besteht, größtenteils von dem Zwischenträgerteil kompensiert werden, da Molybdän aufgrund seines hohen Elastizitätsmoduls die mechanischen Spannungen im elastischen Dehnungsbereich aufnimmt. An Stelle von Molybdän kann selbstverständlicherweise auch ein anderer elektrisch leitender Werkstoff mit einem hohen Elastizitätsmodul, hoher Fließspannung und hoher Temperaturbeständigkeit verwendet sein. Als Beispiele wären hier W, CuW- und CuMo-Legierungen (Cu-Anteil jeweils zwischen 10 und 20%) zu nennen. Alle oben genannten Materialen lassen sich sowohl als Folie als auch als Sputter-, Aufdampf- oder Galvanikschicht herstellen und weisen eine gute Wärmeleitfähigkeit auf.In a particularly preferred embodiment of the laser device, in which the body emitting laser radiation is a semiconductor laser chip, that is between the semiconductor laser chip and the base member provided intermediate support part Molybdenum lead frame, which is created by means of phototechnical structuring a molybdenum layer applied to the base part (e.g. sputter, vapor deposition or electroplating layer) is manufactured or as a prefabricated part (as Lead frame) on the base support part, for example by means of a Braze layer is attached. This has the special one Advantage that mechanical stresses due to different thermal expansion of the semiconductor laser chip and the base support part, for example as a heat sink serves and z. B. consists of copper, mostly from the intermediate carrier part can be compensated because of molybdenum its high modulus of elasticity, the mechanical stresses in the elastic stretch range. Instead of Of course, molybdenum can be another electrically conductive material with a high modulus of elasticity, high yield stress and high temperature resistance be used. Examples include W, CuW and CuMo alloys (Cu content between 10 and 20%). All of the above materials can be used as Foil as well as a sputter, vapor deposition or electroplating layer manufacture and have good thermal conductivity.

Die erfindungsgemäße Laservorrichtung wird im folgenden anhand eines Ausführungsbeispieles in Verbindung mit der Figur näher erläutert. Die Figur zeigt eine schematische Darstellung eines senkrechten Schnittes durch das Ausführungsbeispiel. The laser device according to the invention is described below an embodiment in connection with the figure explained in more detail. The figure shows a schematic representation a vertical section through the embodiment.

Bei dem Ausführungsbeispiel ist auf einem Grundträgerteil 5 eines Gehäuses 19 ein Zwischenträgerteil 8 befestigt, auf dem sich ein Halbleiterlaserchip 2 befindet. Das Grundträgerteil 5 besteht beispielsweise aus Kupfer und das Zwischenträgerteil 8 aus Molybdän. Der Halbleiterlaserchip 2 ist beispielsweise ein Leistungs-Halbleiterlaser-Barren, der im Betrieb eine Mehrzahl von im Querschnitt streifenförmigen, auf einer Geraden nebeneinander angeordneten Einzellaserstrahlen 4 aussendet und aus AlxGa1-xAs (0 ≤ x ≤ 1) besteht. Dieser Halbleiterlaserchip 2 ist beispielsweise mittels einer Hartlotschicht 12 (z. B. bestehend aus Au-Sn-Lot) mit dem Zwischenträgerteil 8 verbunden.In the exemplary embodiment, an intermediate carrier part 8, on which a semiconductor laser chip 2 is located, is fastened on a base carrier part 5 of a housing 19. The base support part 5 consists, for example, of copper and the intermediate support part 8 of molybdenum. The semiconductor laser chip 2 is, for example, a power semiconductor laser bar which, in operation, emits a plurality of individual laser beams 4 which are strip-shaped in cross section and arranged alongside one another on a straight line and which consists of Al x Ga 1-x As (0 ≤ x 1 1). This semiconductor laser chip 2 is connected to the intermediate carrier part 8, for example, by means of a hard solder layer 12 (eg consisting of Au-Sn solder).

Auf der Oberseite des Halbleiterlaserchips 2 ist eine Anschlussplatte 11 befestigt, die als zweiter elektrischer Anschluss für den Halbleiterlaserchip 2 vorgesehen ist. Die Anschlussplatte 11 besteht bevorzugt aus demselben Material wie das Zwischenträgerteil 8 und ist z. B. ebenfalls mittels einer Hartlotschicht 13 (z. B. bestehend aus Au-Sn-Lot) auf dem Halbleiterlaserchip 2 befestigt.On the top of the semiconductor laser chip 2 is a connection plate 11 attached as a second electrical connection is provided for the semiconductor laser chip 2. The connection plate 11 preferably consists of the same material as the intermediate support part 8 and is z. B. also by means of a Braze layer 13 (e.g. consisting of Au-Sn solder) on the Semiconductor laser chip 2 attached.

Im Falle eines getrennt vom Grundträgerteil 5 hergestellten Zwischenträgerteiles 8 ist dieses ebenfalls bevorzugt mittels einer Hartlotschicht 14 auf dem Grundträgerteil 5 befestigt.In the case of a separately manufactured from the base support part 5 Intermediate carrier part 8 is also preferably by means of a braze layer 14 attached to the base support member 5.

Am Zwischenträgerteil 8 sind zwei Abstandhalterteile 9,10 ausgebildet, die sich ausgehend von einer Strahlaustrittsfläche 6 des Halbleiterchips 2 in Richtung Strahlausbreitungsrichtung 15 der Laserstrahlung 4 erstrecken und einen Abstand voneinander aufweisen, der größer ist als die Breite der Strahlaustrittsfläche 6, so dass die Laserstrahlung 4 von den Abstandhalterteilen 9,10 nicht beeinträchtigt wird.There are two spacer parts 9, 10 on the intermediate carrier part 8 trained starting from a beam exit surface 6 of the semiconductor chip 2 in the direction of the beam propagation direction 15 of the laser radiation 4 extend and a distance from each other, which is greater than the width of the Beam exit surface 6, so that the laser radiation 4 from the Spacer parts 9,10 is not affected.

Auf dem Grundträgerteil 5 ist weiterhin eine Zylinderlinse 3 angeordnet, die auf gegenüberliegenden Seiten abgeflachte Seitenflächen 7,17 aufweist. Die Zylinderlinse 3 liegt mit einer der abgeflachten Seitenflächen 7 auf dem Grundträgerteil 5 auf und mit einer der Strahlaustrittsfläche 6 des Halbleiterlaserchip 2 zugewandten gekrümmten Seitenfläche an den beiden Abstandhalterteilen 9,10 an und ist mittels einer Silikonschicht 18 auf dem Grundträgerteil 5 befestigt. Silikon-Klebstoffe halten Laserbestrahlung sehr gut stand und überstehen unbeschadet sehr hohe Dehnungen ohne plastisches Ermüden.A cylindrical lens 3 is also on the base support part 5 arranged, the flattened on opposite sides Side faces 7.17. The cylindrical lens 3 lies with one of the flattened side surfaces 7 on the base support part 5 on and with one of the beam exit surface 6 of the Semiconductor laser chip 2 facing curved side surface the two spacer parts 9, 10 and is by means of a Silicone layer 18 attached to the base member 5. Silicone adhesives withstand laser radiation very well and survive very high strains without plastic without damage Fatigue.

Zur Herstellung der oben beschriebenen Zylinderlinsen 3 werden beispielsweise längere Glasfaserstücke von zwei gegenüberliegenden Seiten her beispielsweise mittels Schleifen abgeflacht und anschließend beispielsweise mittels Sägen zu einzelnen Zylinderlinsen zertrennt.To produce the cylindrical lenses 3 described above for example, longer pieces of glass fiber from two opposite Sides flattened for example by means of loops and then for example using saws individual cylindrical lenses separated.

Um die Strahlein- und Strahlauskoppelflächen der Zylinderlinsen 3 optisch zu vergüten, können die Glasfaserstücke zum Beispiel in einer Horde übereinandergestapelt und von beiden Seiten mit einer herkömmlichen optischen Vergütungsschicht versehen werden. Durch die abgeflachten Seitenflächen ist sichergestellt, dass die vergüteten Flächen bei der weiteren Handhabung der Zylinderlinsen 3 nicht verdreht werden.Around the beam coupling and beam coupling surfaces of the cylindrical lenses 3 optically, the glass fiber pieces can be used for Example stacked in a horde and by both Pages with a conventional optical coating be provided. The flattened side surfaces ensure that the remunerated areas at the next Handling the cylindrical lenses 3 must not be rotated.

Die Zylinderlinse 3 ist derart angeschliffen, dass ihr Scheitel genau auf der Höhe des strahlungsemittierenden Bereiches 16 des auf dem Zwischenträgerteil 8 befestigten Halbleiterlaserchips 2 liegt. Der Fokus zwischen dem Halbleiterlaserchip 2 und der Zylinderlinse 3 ist durch die Abstandhalterteile 9,10 des Zwischenträgerteiles 8 fest vorgegeben.The cylindrical lens 3 is ground in such a way that its apex exactly at the level of the radiation-emitting area 16 of the semiconductor laser chip fastened on the intermediate carrier part 8 2 lies. The focus between the semiconductor laser chip 2 and the cylindrical lens 3 is through the spacer parts 9, 10 of the intermediate support part 8 is fixed.

Ein besonderer Vorteil der erfindungsgemäßen Laservorrichtung 1 besteht darin, dass die Zylinderlinse 3 ohne den Halbleiterlaserchip 2 zu betreiben, gegenüber dem Halbleiterlaserchip 2 justiert und anschließend auf das Grundträgerteil 5 montiert werden kann und nicht mehr in mehreren Freiheitsgraden ausgerichtet werden muss.A particular advantage of the laser device according to the invention 1 is that the cylindrical lens 3 without the semiconductor laser chip 2 to operate, compared to the semiconductor laser chip 2 adjusted and then on the base support part 5 can be assembled and no longer in several degrees of freedom must be aligned.

Die Erläuterung der erfindungsgemäßen Laservorrichtung anhand des obigen Ausführungsbeispieles ist selbstverständlicherweise nicht als Einschränkung der Erfindung auf diese spezielle Ausführungsform zu verstehen.The explanation of the laser device according to the invention based on of the above embodiment is a matter of course not as a limitation of the invention to this particular one Understand embodiment.

Claims (10)

  1. Laser device (1), in which a component (2) emitting laser radiation (4) and at least one element (3) for beam guidance and/or beam projection are arranged in a common housing (19), the component (2) being a semiconductor laser chip and the element for beam guidance and/or beam projection being a cylindrical lens (3) characterized in that the cylindrical lens is attached in the housing (19) by means of a layer (18) of silicone and has a flattened side face (7), by way of which it bears on a base carrier part (5).
  2. Laser device (1) according to Claim 1, characterized in that the component (2) emitting laser radiation (4) and the element for beam guidance or beam projection are attached jointly to the base carrier part (5), in such a manner that the element (3) is arranged in front of the beam-emergence surface (6) of the component (2).
  3. Laser device (1) according to Claim 1 or 2, characterized in that the cylindrical lens focuses the laser radiation (4) emitted by the semiconductor laser chip.
  4. Laser device (1) according to one of Claims 1 to 3, characterized in that the cylindrical lens (3) is made from a glass fibre.
  5. Laser device (1) according to one of Claims 1 to 4, characterized in that the semiconductor laser chip (2) is a linear array of power semiconductor lasers.
  6. Semiconductor laser device (1) according to one of Claims 1 to 5, characterized in that an intermediate carrier part (8) is provided between the semiconductor laser chip (2) and the base carrier part (5), which intermediate carrier part has at least two spacer parts (9, 10) which serve as an adjustment stop for the cylindrical lens (3).
  7. Semiconductor laser device (1) according to one of Claims 1 to 6, characterized in that the cylindrical lens is flattened on two mutually opposite sides.
  8. Semiconductor laser device (1) according to one of Claims 6 to 7, characterized in that the distance between the two spacer parts (9, 10) is greater than the width of the beam emergence surface (6) of the semiconductor laser chip (2).
  9. Semiconductor laser device (1) according to one of Claims 6 to 8, characterized in that the intermediate carrier part (8) contains molybdenum, CuW or CuMo.
  10. Semiconductor laser device (1) according to one of Claims 6 to 9, characterized in that a focus between the semiconductor laser chip and the cylindrical lens (3) is fixedly predetermined by the length of the spacer parts (9, 10) of the intermediate carrier part (8).
EP98912273A 1997-02-18 1998-02-18 Laser device Expired - Lifetime EP0962035B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19706279 1997-02-18
DE19706279A DE19706279A1 (en) 1997-02-18 1997-02-18 Laser device
PCT/DE1998/000489 WO1998037603A1 (en) 1997-02-18 1998-02-18 Laser device

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EP0962035A1 EP0962035A1 (en) 1999-12-08
EP0962035B1 true EP0962035B1 (en) 2003-05-02

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US (1) US6135645A (en)
EP (1) EP0962035B1 (en)
CN (1) CN1099743C (en)
DE (2) DE19706279A1 (en)
WO (1) WO1998037603A1 (en)

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JP3914670B2 (en) 1999-11-18 2007-05-16 パイオニア株式会社 Semiconductor module and method for attaching semiconductor laser element of semiconductor module
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EP0962035A1 (en) 1999-12-08
CN1099743C (en) 2003-01-22
DE59808159D1 (en) 2003-06-05
WO1998037603A1 (en) 1998-08-27
US6135645A (en) 2000-10-24
CN1248350A (en) 2000-03-22
DE19706279A1 (en) 1998-08-20

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