EP0944816A1 - Resistance electrique avec au moins deux champs de contact sur un substrat en ceramique et son procede de fabrication - Google Patents

Resistance electrique avec au moins deux champs de contact sur un substrat en ceramique et son procede de fabrication

Info

Publication number
EP0944816A1
EP0944816A1 EP97952032A EP97952032A EP0944816A1 EP 0944816 A1 EP0944816 A1 EP 0944816A1 EP 97952032 A EP97952032 A EP 97952032A EP 97952032 A EP97952032 A EP 97952032A EP 0944816 A1 EP0944816 A1 EP 0944816A1
Authority
EP
European Patent Office
Prior art keywords
substrate
conductor track
glass
recess
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97952032A
Other languages
German (de)
English (en)
Inventor
Karlheinz Wienand
Karlheinz Ullrich
Margit Sander
Stefan Dietmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Electro Nite International NV
Original Assignee
Heraeus Electro Nite International NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Electro Nite International NV filed Critical Heraeus Electro Nite International NV
Publication of EP0944816A1 publication Critical patent/EP0944816A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
    • G01K7/183—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer characterised by the use of the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/22—Elongated resistive element being bent or curved, e.g. sinusoidal, helical
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0388—Other aspects of conductors
    • H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material

Definitions

  • the invention relates to an electrical resistor, in particular a temperature-dependent measuring resistor with a fast response time, with a conductor track which is provided with at least two connection contact fields which are arranged on an electrically insulating surface of a substrate, part of the conductor track spanning at least one recess in the substrate in a bridge-like manner and the conductor track is arranged in one plane, and method for its production.
  • a temperature measuring arrangement with a temperature-sensitive thin-film resistor is known, which is applied in a meandering shape to a plastic film which is stretched over a cavity of a substrate material; a printed circuit board or a carrier made of epoxy resin is provided as the substrate.
  • Such a temperature measuring arrangement is only suitable for use in an environment with temperatures below 200 ° C. due to the low thermal resistance of synthetic resin.
  • a temperature-dependent electrical resistance made of resistance material which forms a winding conductor track as a thin layer, which is applied to a thin film;
  • the uncoated side of the film consisting of polymeric plastic spans a recess in a carrier body, which consists, for example, of copper, the recess having the same shape as the conductor track and being aligned with it in the direction perpendicular to the plane of the film; it is a
  • IEST ⁇ GGUNGSKOPIE Temperature measuring arrangement which requires a high technical effort for the required precise coverage of the conductor track and the recess.
  • a platinum temperature sensor is known from DE 38 29 765 A1 and US 49 06 965, in which a platinum resistance track with at least two ends is applied to a surface of at least one ceramic substrate;
  • a platinum conductor track in the form of a meandering zigzag pattern is applied to the inner surface of a ceramic sheet, and then formed into a roll, breaks with alignment bridges between adjacent points of the conductor track pattern also being provided for the purpose of adjustment.
  • the ceramic substrate is fired together with the applied platinum resistance.
  • the platinum resistance is resistant to the ambient atmosphere and moisture through sealing measures.
  • the lead-through openings and lines required for this are sealed with a ceramic coating or glass paste after adjustment.
  • a problem with such an arrangement is the relatively high heat capacity, which does not readily enable a rapid response in the event of sudden changes in temperature and only provides an exact measured value after a transition function has expired.
  • a resistance element as a fast temperature sensor is known from DE 38 29 195 A1; the resistance element is designed as a sheet resistor made of platinum paste, which is accommodated in a bubble made of glass ceramic, which is arched on an electrically insulating ceramic substrate.
  • the cantilevered resistance layer is problematic with regard to mechanical loads such as. B. to see shock, pressure or vibration in applications in harsh environments.
  • the object of the invention is to provide resistances of fast-responding temperature sensors which are insensitive to external mechanical loads and which are particularly suitable as sensors for rapidly changing temperatures in gas masses in the temperature range from -100 to + 800 ° C. Furthermore, such gas sensors are to be used to set up rapid gas mass meters with microstructures, the response of which is in the millisecond range.
  • the object is achieved in that the substrate is formed from ceramic or glass and in that the conductor track is fastened in the edge region of the substrate adjacent to the recess on the electrically insulating surface of the substrate.
  • the high durability of the sensor has proven to be particularly advantageous.
  • the conductor track is in the form of a meander at least in the region of the recess, the respective reversal regions of the meander being fastened in the edge region of the recess on the electrically insulating surface of the substrate, while the intermediate webs of the meander span the recess in a bridge-like manner; in one of the preferred embodiments, the conductor track consists of a platinum layer / Pt film which has a thickness in the range from 1 to 6 ⁇ m, preferably 2.5 ⁇ m.
  • the sensor signal follows the rapidly changing measurement parameters almost without inertia.
  • the conductor track consists of a gold layer, the gold layer having a thickness in the range from 1 ⁇ m to 8 ⁇ m, preferably 2 ⁇ m to 3 ⁇ m.
  • the electrical conductor track is applied to a plate-shaped membrane at least partially covering the recess, the membrane having a thickness in the range from 1 ⁇ m to 50 ⁇ m.
  • the increased stability of the conductor track proves to be advantageous, as can be required in particular in the case of heavy mechanical stress, for example vibration.
  • the membrane either consists of a glass layer that has a thickness between 10 ⁇ m and 50 ⁇ m, or it preferably consists of an SiO or TiO 2 layer, applied in a thin-layer process, whereby it has a thickness between 1 ⁇ m and 10 ⁇ m, preferably has a thickness of 2 ⁇ m. Due to the relatively thin membrane, a low thermal inertia and thus a quick response is advantageously ensured.
  • the conductor track on the substrate is provided with a covering layer made of an electrically insulating material, which has a thickness in the range from 1 ⁇ m to 50 ⁇ m; this protects the conductor track, in particular in an aggressive environment, so that long-term stability is increased.
  • the cover layer of the conductor track consists either of glass with a thickness of the glass cover layer in the range between 10 ⁇ m and 50 ⁇ m or of an intermediate thin-layer method, the cover layer advantageously consisting of an SiO layer that has a thickness of 1 ⁇ m to 10 ⁇ m, preferably has a thickness of 2 ⁇ m.
  • a recess is made in a ceramic substrate, this is filled with filler materials made of glass pastes, glass ceramic, glass solder, silver, indium, nickel or a silver-nickel alloy and the resulting filling is leveled with an outer surface of the substrate, that a conductor track made of platinum or gold is subsequently applied to at least part of the electrically insulating substrate surface, and that the filler material is then etched away, so that the metal conductor track the recess in spanning a level like a bridge.
  • indium As the filling material, since it can be leveled very easily and by means of a mixture of: 45 g / l Ce (S0 4 ) 2 , 160 g / l HN0 3 , 80 g / l H 2 S0 4 can be removed chemically at a temperature of preferably 60 ° C.
  • a recess is made in a ceramic substrate, this is filled with filler materials made of glass pastes, glass ceramic, glass solder, silver, indium, nickel or a silver-nickel alloy and the filling thus produced is leveled with the outer surface of the substrate, that a flat membrane is subsequently applied to the surface of the substrate in a screen printing or thin-film process, and that subsequently a conductor track made of platinum or gold is applied in a Glavanic manner or in a thin-film process to the glass membrane is, and then a structured cover layer is at least partially applied to the conductor track and finally the filling material located in the recess is etched away.
  • the use of indium as a filler material has proven to be ideal.
  • the membrane is applied to the surface of the substrate as a glass membrane in the screen printing process or as a thin film process as a thin film SiO membrane; thus customary coating techniques can advantageously be used; in addition, the structured cover layer is applied to the conductor track as a glass or in a thin film process as a thin film layer made of SiO.
  • the recess is made in the depth range from 20% to 60% of the thickness of the substrate by sawing.
  • Such a method is advantageously to be used for the serial production of resistors with a small number of copies, since the chemical etching attack that takes place later to remove the filler material can be carried out very gently (from the rear).
  • Glass pastes are preferably applied with approximately the same expansion coefficient as the substrate as a covering layer on the conductor track and substrate and at a temperature in the range from 500 ° C to 1,000 ° C, in particular from 850 ° C to 920 ° C, in a continuous furnace for a period of burned in for about 20 minutes.
  • the relatively simple series production has proven to be advantageous.
  • the conductor track is preferably applied using the thin-film method and structured by means of photolithography, ion etching and removal of photoresist; it proves to be advantageous that a high precision of the resistance can be achieved.
  • the conductor tracks can be filled with Pt using the PVD process and then separated using lift-off technology.
  • Figure 1 shows a perspective view of a first preferred embodiment of the subject of the invention
  • Figure 2 shows a cross section through the longitudinal axis of Figure 1 along the line AB of Figure 1;
  • FIG. 3 shows a resistor manufactured according to an alternative method, in which the recess was laser cut into the ceramic substrate
  • FIG. 4 shows a perspective view of a further preferred embodiment of the invention, in which the platinum structure of the measuring resistor is applied to a membrane which is located on the surface of the substrate;
  • FIG. 5 shows a cross section through the longitudinal axis of the figure along the line CD
  • FIG. 6 shows the time course of the voltage rise (voltage U as a function of time t), the sensor being subjected to a current of 0.07 A; the time scale for curves (a) and (b) is 0.5 ms / div or graduation mark, for curve (c) 5 ms / div and for curve (d) 5 s / div.
  • FIG. 7 shows a resistor in which the conductor track is applied as a meander made of platinum or gold to a thin film membrane and is passivated in the region of the recess by a cover layer;
  • FIG. 8 shows a response time determination (voltage U as a function of time t) for a resistor with a conductor track as a platinum meander with a thickness of 1.7 ⁇ m according to FIG. 7.
  • ceramic substrate 1 consists of a cuboid block with an electrically insulating surface based on ceramic or glass; the substrate 1 is provided along its central axis 2 with a recess 3 which is bridged over by a conductor track 4 serving as a measuring resistor, parts of the conductor track 4 being fastened to the substrate in the edge region of the substrate for the recess.
  • the conductor track is provided at its respective ends 5, 6 with connection contact fields 7, which are used for connection to an electrical evaluation circuit.
  • the conductor track with its thickness of approx.2.5 ⁇ m has an extraordinarily low heat capacity, it can assume the temperature of the surrounding atmosphere or the gas atmosphere flowing through the recess 3 extremely quickly in the area bridging the recess 3 and thus advantageously for rapid evaluation or display thermal changes.
  • the substrate 1 consists of an aluminum oxide ceramic with 99.6% by weight Al 2 O 3 and has a thickness in the range from 0.1 to 1.0 mm; the thickness of the substrate is preferably in the range from 0.6 to 0.7 mm.
  • the width of the recess 3 is preferably in the range from 0.5 to 1 mm, the depth thereof in the range from 0.1 to 0.4 mm.
  • the conductor track 4 consists of a platinum layer with a thickness of approximately 2.5 ⁇ m, a glass cover layer 8 being applied to the platinum layer in the support area of the substrate 1 using the screen printing method, the ends 5, 6 of the conductor track 4 being made of glass Cover layer are left blank and are provided with a gold layer also applied as a screen contact method as connection contact fields 7.
  • millings for recess 3 with a width of 0.78 mm are made in a ceramic substrate 1 made of aluminum oxide with a thickness of 0.6 to 0.7 mm, preferably 0.635 mm, line by line at a depth of 0.3 mm.
  • the milled portions are initially filled with glass pastes of various types to a milling depth of three quarters and then dried at a temperature of 180 ° C for one hour; they are then baked at a peak temperature in the range of approx. 850 ° C for 20 minutes in a continuous furnace through which compressed air flows. Then the milling is filled a second time so that after drying and after baking the glass paste again with the same parameters as for the first filling, an overlap of approx. 0.1 to 0.2 mm there is the milling in the substrate 1; this means that the filling protrudes about 0.1 to 0.2 mm above the outer surface of the substrate.
  • the remaining burned-in glass paste is ground in a wet process using silicon carbide with grits 350, 500, 800, 1200, 2400 and 4000 so that the transitions in the area of ceramic substrate glass paste have such a small unevenness that they are in the range of less than 1 ⁇ m lies.
  • silicon carbide with grits 350, 500, 800, 1200, 2400 and 4000 so that the transitions in the area of ceramic substrate glass paste have such a small unevenness that they are in the range of less than 1 ⁇ m lies.
  • the form-fitting filling of the cutouts of the recess 3, which are introduced line by line, is ultimately due to the expansion coefficients of the glasses, which in the temperature range under consideration are approximately 7.5 ⁇ 10 ⁇ 6 per degree Celsius and thus almost correspond to the expansion coefficient of the aluminum oxide ceramic used for the substrate 1.
  • the substrates filled in this way are vapor-deposited with a doped platinum layer with a thickness of 1.5 ⁇ m to 2.5 ⁇ m; Then, according to the prior art - for example DE 36 03 785 C2 or DE 42 02 733 C2 - known process steps such as photolithography, ion etching of the platinum and removal of the photoresist by means of ashing take place.
  • a microscopic inspection has shown that the platinum conductor tracks with a width in the range from 10 ⁇ m to 15 ⁇ m remain undamaged in the transition area from ceramic to glass plate; after structuring, a suitable glass cover layer 8 (for example IP 211 from WC Heraeus GmbH) and the connection contact fields 7 with a gold surface are applied by screen printing.
  • the measuring resistors arranged on the utility ceramic substrate are then separated into individual parts by a frame saw; finally, the areas filled with the glass pastes are detached from the recesses 3 from the end faces. This is done using concentrated HN0 3 (65 percent) at a temperature of 50 ° C.
  • a temperature sensor manufactured using this method has the following data, for example:
  • the heating of the sensor is recorded as a time-dependent voltage drop with a storage oscilloscope, from which the time course of the temperature rise of the sensor can be determined.
  • the equilibrium temperature which arises can be calculated from the voltage U 1.
  • the temperature jump of ⁇ T 53 ° C was reached within 3.2 ms (t 50%).
  • FIG. 4 shows an embodiment of the resistor, in which the same substrate 1 with recess is used as in the previously explained first embodiment according to FIGS. 1 and 2.
  • the surface of the substrate 1 was covered by a flat plate-shaped membrane 10 made of glass covered, which closes the recess 3 towards the top, on this membrane 10, the conductor track 4 is then applied as a platinum coating, similar to that explained with reference to Figures 1 and 2, the ends 5 and 6 of the conductor track are each connected to connection contact pads 7, which are also are applied to the membrane 10
  • the structure of the conductor track 4, like the glass cover layer 8, is applied by screen printing, the total glass thickness of the membrane 10 is in the range from 10 ⁇ m to 50 ⁇ m
  • FIG. 5 shows a sectional illustration transverse to the axis 2 along the line CD of FIG. 4
  • a silver profile wire with the dimensions 0.79 mm x 0.28 mm is cut to the size of the substrate and embedded in the recess almost level by means of a glass paste, for example, type IP 156 from WC Heraeus GmbH, which melts at approx. 900 ° C
  • a cover plate is then attached to the substrate using two clips.
  • another glass paste is screen-printed twice, followed by drying and baking at a peak temperature of 850 ° C. for a period of twenty minutes. This results in the previously mentioned total glass thickness of the membrane 10 of 10 ⁇ m to 50 ⁇ m; After cleaning the glass surface, the process already described with reference to FIGS. 1 and 2 is carried out until the individual substrates are subsequently separated.
  • a temperature sensor manufactured according to this exemplary embodiment has the following data, the platinum thickness being 2 ⁇ m:
  • the measurement curves obtained in this exemplary embodiment are shown in FIG. At a purely ohmic resistance of 6.8 ohms (measurement curve a; time scale: 0.5 ms / div.), After a settling time of approx. 0.5 ms due to the generator, no further voltage rise and thus no temperature rise can be seen. This behavior is with the platinum temperature sensor fundamentally different according to embodiment 2; the measuring resistor heats up according to the time curves b) (time scale: 0.5 ms / div), c) (time scale: 5 ms / div) and d) (time scale: 5 s / div) and reaches an equilibrium temperature of approx . 279 ° C.
  • the membrane 10 has been applied in a thickness of 2 ⁇ m by means of a PVD method.
  • a thin Pt electrode with a thickness of 0.05 ⁇ m was applied in the same PVD process.
  • the conductor tracks have been exposed; these were then electroplated in an acid Pt electrolyte to a thickness of approximately 1.8 ⁇ m.
  • the substrate was scratched in a diamond saw according to the individual sensors, and then the indium filling in the square substrate recesses was removed by wet chemical means. Now a differential etching of the platinum of approx.
  • the platinum meander was heated from the room temperature to the temperatures indicated in FIG. 8 using the specified electrical currents.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)

Abstract

Cette résistance de mesure en fonction de la température avec un temps de réaction rapide est au moins partiellement montée sur la surface électriquement isolante d'un substrat en céramique. Une partie de la piste conductive enjambe un évidement dans le substrat, à la manière d'un pont, et la partie restante de la piste conductive est pourvue de champs de contact dans la zone marginale du substrat adjacente à l'évidement. La piste conductive est constituée d'une couche de platine ou d'Au et partiellement pourvue d'une couche de couverture en verre, les champs de contact étant dégagés. Dans un autre mode de réalisation, la piste conductive se situe avec les champs de contact soit sur une membrane en verre imprimée par sérigraphie soit sur une membrane à couche mince appliquée par un procédé de déposition physique en phase vapeur qui recouvre la surface du substrat en céramique et enjambe l'évidement. Lorsqu'une membrane en verre recouvre la surface du substrat, la couche qui recouvre la piste conductive est elle aussi sélectivement appliquée par sérigraphie. Lorsqu'une membrane à couche mince recouvre la surface du substrat, la couche qui recouvre la piste conductive est elle aussi sélectivement appliquée par un procédé de déposition physique en phase vapeur et peut être constituée du même matériau que la membrane à couche mince. Le substrat en céramique est de préférence constitué d'oxyde d'aluminium.
EP97952032A 1996-12-10 1997-12-03 Resistance electrique avec au moins deux champs de contact sur un substrat en ceramique et son procede de fabrication Withdrawn EP0944816A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19651141 1996-12-10
DE19651141 1996-12-10
PCT/EP1997/006757 WO1998026260A1 (fr) 1996-12-10 1997-12-03 Resistance electrique avec au moins deux champs de contact sur un substrat en ceramique et son procede de fabrication

Publications (1)

Publication Number Publication Date
EP0944816A1 true EP0944816A1 (fr) 1999-09-29

Family

ID=7814136

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97952032A Withdrawn EP0944816A1 (fr) 1996-12-10 1997-12-03 Resistance electrique avec au moins deux champs de contact sur un substrat en ceramique et son procede de fabrication

Country Status (6)

Country Link
US (1) US6159386A (fr)
EP (1) EP0944816A1 (fr)
JP (1) JP2001510562A (fr)
DE (1) DE19753642C2 (fr)
TW (1) TW375744B (fr)
WO (1) WO1998026260A1 (fr)

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TW375744B (en) 1999-12-01
DE19753642A1 (de) 1998-06-25
JP2001510562A (ja) 2001-07-31
US6159386A (en) 2000-12-12
WO1998026260A1 (fr) 1998-06-18
DE19753642C2 (de) 2002-02-28

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