EP0904159A4 - METHOD FOR MODIFYING ELECTRON LEAK OUT POTENTIAL USING ION IMPLANTATION - Google Patents

METHOD FOR MODIFYING ELECTRON LEAK OUT POTENTIAL USING ION IMPLANTATION

Info

Publication number
EP0904159A4
EP0904159A4 EP97922305A EP97922305A EP0904159A4 EP 0904159 A4 EP0904159 A4 EP 0904159A4 EP 97922305 A EP97922305 A EP 97922305A EP 97922305 A EP97922305 A EP 97922305A EP 0904159 A4 EP0904159 A4 EP 0904159A4
Authority
EP
European Patent Office
Prior art keywords
ion implantation
work functions
modify work
modify
functions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97922305A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0904159A1 (en
Inventor
Ronald G Musket
Medhi Balooch
Wigbert J Siekhaus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of EP0904159A1 publication Critical patent/EP0904159A1/en
Publication of EP0904159A4 publication Critical patent/EP0904159A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
EP97922305A 1996-04-01 1997-03-28 METHOD FOR MODIFYING ELECTRON LEAK OUT POTENTIAL USING ION IMPLANTATION Withdrawn EP0904159A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62525996A 1996-04-01 1996-04-01
US625259 1996-04-01
PCT/US1997/006168 WO1997036693A1 (en) 1996-04-01 1997-03-28 Process to modify work functions using ion implantation

Publications (2)

Publication Number Publication Date
EP0904159A1 EP0904159A1 (en) 1999-03-31
EP0904159A4 true EP0904159A4 (en) 2002-02-27

Family

ID=24505259

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97922305A Withdrawn EP0904159A4 (en) 1996-04-01 1997-03-28 METHOD FOR MODIFYING ELECTRON LEAK OUT POTENTIAL USING ION IMPLANTATION

Country Status (4)

Country Link
EP (1) EP0904159A4 (ja)
JP (1) JP2000508110A (ja)
TW (1) TW400553B (ja)
WO (1) WO1997036693A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW412055U (en) * 1998-03-04 2000-11-11 Koninkl Philips Electronics Nv Electron tube with a cesium source
JP3809181B2 (ja) * 2003-12-25 2006-08-16 松下電器産業株式会社 電子放出材料とこれを用いた電子放出素子
JP2009016233A (ja) * 2007-07-06 2009-01-22 Kyoto Univ 電界放出型電子源の製造方法
US8058159B2 (en) 2008-08-27 2011-11-15 General Electric Company Method of making low work function component
JP4939565B2 (ja) * 2009-04-06 2012-05-30 キヤノン株式会社 電子ビーム露光装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678325A (en) * 1969-03-14 1972-07-18 Matsushita Electric Ind Co Ltd High-field emission cathodes and methods for preparing the cathodes
NL8600098A (nl) * 1986-01-20 1987-08-17 Philips Nv Kathodestraalbuis met ionenval.
JP2836790B2 (ja) * 1991-01-08 1998-12-14 株式会社神戸製鋼所 ダイヤモンド薄膜へのオーミック電極形成方法
US5258685A (en) * 1991-08-20 1993-11-02 Motorola, Inc. Field emission electron source employing a diamond coating
US5463271A (en) * 1993-07-09 1995-10-31 Silicon Video Corp. Structure for enhancing electron emission from carbon-containing cathode

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
No further relevant documents disclosed *
See also references of WO9736693A1 *

Also Published As

Publication number Publication date
EP0904159A1 (en) 1999-03-31
TW400553B (en) 2000-08-01
WO1997036693A1 (en) 1997-10-09
JP2000508110A (ja) 2000-06-27

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