EP0733933A1 - Akustooptische Vorrichtung - Google Patents
Akustooptische Vorrichtung Download PDFInfo
- Publication number
- EP0733933A1 EP0733933A1 EP96104354A EP96104354A EP0733933A1 EP 0733933 A1 EP0733933 A1 EP 0733933A1 EP 96104354 A EP96104354 A EP 96104354A EP 96104354 A EP96104354 A EP 96104354A EP 0733933 A1 EP0733933 A1 EP 0733933A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- linbo
- substrate
- thin film
- film layer
- dielectric thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/33—Acousto-optical deflection devices
- G02F1/335—Acousto-optical deflection devices having an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
- G02F1/125—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves in an optical waveguide structure
Definitions
- the present invention relates to an acoustooptic device, and particularly to an acoustooptic device which is preferably used as a light deflecting device for a laser printer or other suitable device.
- Fig. 7 is a perspective view showing a conventional acoustooptic device
- Fig. 8 is a diagram showing a main part of the acoustooptic device of Fig. 7.
- the acoustooptic device deflects light beams by using an interaction between light and ultrasonic waves such as surface acoustic waves.
- the acoustooptic device 1 includes a Y-cut LiNbO 3 layer 2, and an optical waveguide layer 3 which is formed of a thin film of Nb 2 O 5 is located on the LiNbO 3 layer 2.
- An input grating 4 is located on the principal plane at a light input side of the optical waveguide layer 3 so as to be substantially perpendicular to a light incident direction.
- An output grating 5 is located on the principal plane at a light output side of the optical waveguide layer 3 so as to be substantially parallel to the input grating 4.
- the input grating 4 and the output grating 5 collect spatial light beams into the optical waveguide and combine the spatial light beams.
- the input grating 4 and the output grating 5 are formed as plural grooves which are parallel to one another, or formed of plural rod-shaped electrodes which are parallel to one another.
- an interdigital electrode 6 is located on the principal plane of the optical waveguide layer 3 so that a Rayleigh wave, which is a kind of surface acoustic wave, is excited at the intermediate portion between the input grating 4 and the output grating 5.
- the interdigital electrode 6 is formed of a pair of comb-shaped electrodes 6a and 6b which are mutually inserted into each other ( or interdigitated) as shown in Fig. 8.
- One comb-shaped electrode 6a is grounded while the other comb-shaped electrode 6b is connected to an oscillator for applying a frequency.
- a Rayleigh wave is excited so as to have a frequency corresponding to a frequency applied by the interdigital electrode 6.
- One light beam is incident from a light source 7 into the optical waveguide layer 3 of the acoustooptic device 1.
- the light beam which is incident from the light source 7 into the optical waveguide layer 3 is diffracted by the Rayleigh wave which is excited by the applied frequency, so that a different light diffraction (deflection) angle can be obtained by changing the frequency applied to the interdigital electrode 6.
- the acoustooptic device 1 may be used as a light deflection device for a laser printer or the like.
- ⁇ f ( ⁇ 0 ⁇ f)/(2v cos ⁇ B )
- the conventional acoustooptic device as described above has a small electromechanical coupling factor K.
- K is theoretically equal to 0.22
- K is theoretically equal to 0.23. Therefore, in the conventional acoustooptic device, it is difficult to broaden the frequency band ⁇ f of the frequency at which the Rayleigh wave is excited, and it has been impossible to increase the variation (variable width) of the light deflection angle.
- the preferred embodiments of the present invention provide an acoustooptic device in which the efficiency of excitation of a Rayleigh wave is improved and the frequency for the excitation of the Rayleigh wave is broadened, so that the variable width of a light deflection angle is increased.
- an acoustooptic device includes a Y-cut and Z-propagation LiNbO 3 substrate, an optical waveguide layer located on at least a part of the LiNbO 3 substrate and having a higher light refractive index than the LiNbO 3 substrate, an interdigital electrode located on the LiNbO 3 substrate for generating Rayleigh waves, and a dielectric thin film layer located on the interdigital electrode.
- the dielectric thin film layer preferably contains ZnO or Ta 2 O 5 .
- the polarity of the dielectric thin film layer is coincident with the polarity of the LiNbO 3 substrate on the confronting surfaces of the dielectric thin film layer and the LiNbO 3 substrate.
- a normalized film thickness of the dielectric thin film layer is preferably 0.37 or less.
- an acoustooptic device includes a 128°-rotating Y-plane LiNbO 3 substrate, an optical waveguide layer which is located on at least the LiNbO 3 substrate of 128°-rotating and Y-plane and has a light refractive index higher than the 128°-rotating and Y-plane LiNbO 3 , an interdigital electrode located on the 128°-rotating Y-plane LiNbO 3 , for generating Rayleigh waves, and a dielectric thin film layer located on the interdigital electrode.
- the dielectric thin film layer preferably contains ZnO or Ta 2 O 5 .
- the polarity of the dielectric thin film layer is coincident with the polarity of the 128°-rotating Y-plane LiNbO 3 .
- the normalized film thickness of the dielectric thin film layer is preferably 0.5 or less.
- the optical waveguide layer preferably contains Nb 2 O 5 .
- the optical waveguide layer may be formed by diffusing Ti into one principal plane of the LiNbO 3 layer.
- the optical waveguide layer may be formed by subjecting Ti to proton exchange on one principal plane of the LiNbO 3 layer.
- the Rayleigh waveform which is a kind of surface acoustic wave is excited on the LiNbO 3 substrate or the optical waveguide layer by the interdigital electrode located on the Y-cut and Z-propagation LiNbO 3 substrate or 128°-rotating Y-plane LiNbO 3 substrate, the optical waveguide layer being located at least a part of the Y-cut and Z-propagation LiNbO 3 substrate or 128°-rotating Y-plane LiNbO 3 substrate.
- the dielectric thin film layer By forming the dielectric thin film layer on the interdigital electrode, the electromechanical coupling factor is increased, and the excitation efficiency of the Rayleigh wave is enhanced. In addition, the frequency for the excitation of the Rayleigh wave is broadened.
- the polarity of the dielectric thin film layer is coincident with the polarity of the LiNbO 3 substrate (and the optical waveguide layer), whereby the electromechanical coupling efficiency is increased, and the enhancement of the excitation of the Rayleigh wave and the broadening of the frequency band is achieved.
- the interdigital electrode is located on the Y-cut and Z-propagation LiNbO 3 substrate having the optical waveguide layer on at least a part thereof and further, the dielectric thin film layer is located on the interdigital electrode, the electromechanical coupling efficiency is increased, the excitation efficiency of the Rayleigh wave is enhanced and the frequency band is broadened by setting the normalized film thickness of the dielectric thin film layer to be about 0.37 or less.
- the dielectric thin film layer contains ZnO or Ta 2 O 5 , the electromechanical coupling efficiency is increased, the excitation efficiency of the Rayleigh wave is enhanced and the frequency band is broadened.
- the electromechanical coupling efficiency is increased, the excitation efficiency of the Rayleigh wave is enhanced and the frequency band is broadened.
- the optical waveguide layer is located on the 128°-rotating Y-plane LiNbO 3 substrate
- the interdigital electrode is located on the optical waveguide layer, and further the dielectric thin film layer is located on the interdigital electrode
- the electromechanical coupling efficiency is increased, the excitation efficiency of the Rayleigh wave is enhanced and the frequency band is broadened by setting the normalized film thickness of the dielectric thin film layer to be about 0.5 or less.
- the electromechanical coupling factor is increased, the excitation of the Rayleigh wave is excited with high efficiency, and the Rayleigh wave is excited at a broad frequency, so that an acoustooptic device having a large variable width of a light deflection angle is obtained.
- Fig. 1 is a perspective view showing a preferred embodiment according to the present invention
- Fig. 2 is a diagram showing a main part of the preferred embodiment of Fig. 1
- Fig. 3A is a diagram showing an end surface of the preferred embodiment shown in Fig. 1.
- An acoustooptic device 10 contains a Y-cut and Z-propagation LiNbO 3 substrate 12.
- An optical waveguide layer such as an optical waveguide layer 14 formed of a Nb 2 O 5 thin film, is located on one principal plane of the LiNbO 3 substrate 12.
- the optical waveguide layer 14 preferably has a higher light refractive index than the LiNbO 3 substrate 12.
- An input grating 16 is located on the principal plane of the light input side of the optical waveguide layer 14 so as to be substantially perpendicular to a light incident direction.
- An output grating 18 is located on the principal plane of the light output side of the optical waveguide layer 14 so as to be substantially parallel to the input grating 16.
- the input grating 16 and the output grating 18 collect spatial light beams into the optical waveguide and combine the collected spatial light beams.
- the input grating 16 and the output grating 18 are formed as plural grooves which are substantially parallel to one another, or formed of plural rod-shaped electrodes which are substantially parallel to one another.
- an interdigital electrode 20 is formed of Al or the like on the principal plane of the optical waveguide layer 14 so that Rayleigh wave which is a kind of surface acoustic wave is excited at the intermediate portion between the input grating 16 and the output grating 18.
- the interdigital electrode 20 is formed of a pair of comb-shaped electrodes 20a and 20b which are mutually inserted into each other (interdigitated) as shown in Fig. 2.
- One comb-shaped electrode 20a is grounded while the other comb-shaped electrode 20b is connected to an oscillator for applying a frequency.
- a dielectric thin film layer 22 of ZnO, Ta 2 O 5 , or the like is formed on the interdigital electrode 20.
- a thin film layer of ZnO is formed as the dielectric thin film layer 22.
- the interdigital electrode 20 may be located directly on the LiNbO 3 substrate 12.
- the optical waveguide layer 14 is provided on the region other than the region of the LiNbO 3 substrate 12 where the interdigital electrode 20 is located.
- Figs. 3A and 3B show the interdigital electrode 20 whose side faces are covered with the dielectric thin film layer 22, the side faces may not covered with the dielectric thin film layer 22.
- a multi-frequency Rayleigh wave is excited by the interdigital electrode 20.
- One light beam is incident from a light source 24 into the optical waveguide layer 14 of the acoustooptic device 10.
- the incident light beam is diffracted by varying the frequency for excitation of the Rayleigh wave to thereby vary a light deflection angle.
- the electromechanical coupling factor is increased, and the excitation efficiency of the Rayleigh wave is enhanced.
- the frequency for the excitation of the Rayleigh wave is broadened.
- the dielectric thin film layer 22 contains ZnO or Ta 2 O 5 , the electromechanical coupling efficiency is increased, the excitation efficiency of the Rayleigh wave is enhanced and the frequency band is broadened.
- Fig. 4 is a graph showing the relationship between the normalized film thickness of ZnO serving as the dielectric thin film layer 22 and the electromechanical coupling factor.
- Fig. 5 is a graph showing the relationship between the normalized film thickness of ZnO serving as the dielectric thin film layer 22 and the phase velocity.
- the normalized film thickness is defined as H/ ⁇ where H represents the film thickness of ZnO, and ⁇ represents the wavelength of excited Rayleigh wave.
- positive polarity means a property wherein positive charges are generated by impacting the plane
- negative polarity means a property wherein negative charges are generated by impacting the plane.
- ⁇ plane means that the dielectric thin film layer is formed on the positive-polarity plane
- - plane means that the dielectric thin film layer is formed on the negative-polarity plane.
- a solid line represents calculation values of the relationship between the normalized film thickness of positive-polarity ZnO formed on the positive-polarity LiNbO 3 substrate 12 and the electromechanical coupling factor
- a broken line represents calculation values of the relationship between the normalized film thickness of positive-polarity ZnO formed on the negative-polarity LiNbO 3 substrate 12. Dots represent actually measured values of the relationship between the normalized film thickness of positive-polarity ZnO formed on the positive-polarity LiNbO 3 substrate 12 and the electromechanical coupling factor.
- the electromechanical coupling factor K is greater than that in the case of an interdigital electrode having no dielectric thin film layer.
- the normalized film thickness of ZnO serving as the dielectric thin film layer 22 is set to be within the range of about 0.05 to 0.35 in the case where the polarity of the dielectric thin film layer is coincident with the polarity of the LiNbO 3 substrate. It is also preferable that the normalized film thickness of ZnO serving as the dielectric thin film layer 22 is set to be in the range of about 0.05 to 0.27 in the case where the polarity of the dielectric thin film layer is different from the polarity of the LiNbO 3 substrate. In such cases, the electromechanical coupling factor K becomes about 1.2 times greater than that in the case of an interdigital electrode having no dielectric thin film layer.
- the variation of the light deflection angle is set to a larger value than that of the conventional acoustooptic device 1 by forming the acoustooptic device 10 so that the normalized film thickness of the dielectric thin film layer 22 of the acoustooptic device 10 is in the preferred range as described above. Therefore, according to this preferred embodiment, the acoustooptic device 10 having a high response, miniaturization, non-power and high reliability is provided.
- the acoustooptic device 10 is usable as a light deflection device for a laser printer or the like.
- the device is respondent in a broad range, so that the variable width of the deflection angle can be set to a large value.
- the acoustooptic device 10 has a large variable width of the light deflection angle as described above. Accordingly, it has been adopted in the prior art that a light beam is deflected by a mechanical means such as a polygon mirror in a laser print or the like, whereas in the preferred embodiments of the present invention the acoustooptic device 10 can be used in place of such mechanical means.
- the LiNbO 3 substrate 12 is not limited to the Y-cut and Z-propagation LiNbO 3 substrate, and the 128°-rotating Y-plane LiNbO 3 substrate may be used.
- Fig. 6 is a graph showing the relationship between the normalized film thickness of ZnO serving as the dielectric thin film layer and the electromechanical coupling factor in the acoustooptic device using the 128°-rotating Y-plane LiNbO 3 substrate.
- the optical waveguide layer 14 is located on the 128°-rotating Y-plane LiNbO 3 substrate so that the upper surface of the optical waveguide layer 14 serves as "+ plane".
- the interdigital electrode 20 of Al is formed on the + plane of the 128°-rotating Y-plane LNbO3 substrate, and the dielectric thin film layer 22 of ZnO is formed on the interdigital electrode 20.
- the dielectric thin film layer 22 is formed so that the + plane of ZnO is oriented in the same direction as the + plane of the 128°-rotating Y-plane LiNbO 3 substrate.
- the normalized film thickness of ZnO serving as the dielectric thin film layer 22 is set to be with the preferred range of about 0.08 to 0.43, so that the electromechanical coupling factor K becomes about 1.2 times greater than that in the case of an interdigital electrode having no dielectric thin film layer.
- the normalized film thickness H/ ⁇ satisfies the relation of about 0 ⁇ H/ ⁇ ⁇ 0.5 , the excitation efficiency of the Rayleigh wave is larger, and the frequency band for the excitation of the Rayleigh wave is broader. Accordingly, in the case of the preferred embodiment shown in Fig. 6, by setting the normalized film thickness of the dielectric thin film layer 22 of the acoustooptic device 10 to be within the above preferred range, the variation width of the light deflection angle can be set to a larger value than that of the conventional acoustooptic device 1. Therefore, according to this preferred embodiment, the acoustooptic device 10 having a high response, miniaturization, non-power and high reliability is also provided.
- Table 1 shows the structures of the above preferred embodiments and other preferred embodiments, and the relationship between the normalized film thickness of ZnO serving as the dielectric thin film and the electromechanical coupling factor.
- YZ-LN means that an optical waveguide layer is formed on a Y-cut and Z-propagation LiNbO 3 substrate
- 128Y-LN means that an optical waveguide layer is formed on a 128°-rotating Y-plane LiNbO 3 substrate.
- Al ⁇ IDT means that the interdigital electrode is formed of Al
- "/" means that a material at the left side of "/" is formed on a material at the right side of "/”.
- “+ZnO/Al ⁇ IDT/+YZ-LN” represents a structure that an interdigital electrode of Al is formed on a LiNbO 3 substrate of +Y-plane, Y-cut and Z-propagation and a dielectric thin film having the same polarity is formed on the interdigital electrode.
- “+ZnO/Al ⁇ IDT/-YZ-LN” represents a structure that an interdigital electrode of Al is formed on a LiNbO 3 substrate of -Y-plane, Y-cut and Z-propagation on which an optical waveguide layer is formed, and a dielectric thin film layer having opposite polarity is formed on the interdigital electrode.
- electromechanical coupling factors which are larger than the conventional acoustooptic device (i.e., more than 0.23) are obtained, and thus the same effect as the preferred embodiments as described above can be obtained.
- the electromechanical coupling efficiency can be further increased.
- the excitation of the Rayleigh wave is enhanced and the frequency band can be broadened.
- the optical waveguide layer is formed of Nb 2 O 5 , however, the optical waveguide layer may also be formed by diffusing Ti into one principal plane of the LiNbO 3 substrate or subjecting Ti to proton-exchange. Further, the optical waveguide layer may be formed on the whole surface of the LiNbO 3 substrate or on a part of the surface.
- the dielectric thin film layer is preferably formed of ZnO.
- a thin film layer of Ta 2 O 5 may be formed on the interdigital electrode. In this case, the same effect as described above can be obtained.
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP91681/95 | 1995-03-24 | ||
JP7091681A JP2976273B2 (ja) | 1995-03-24 | 1995-03-24 | 音響光学素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0733933A1 true EP0733933A1 (de) | 1996-09-25 |
Family
ID=14033245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96104354A Withdrawn EP0733933A1 (de) | 1995-03-24 | 1996-03-19 | Akustooptische Vorrichtung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5657152A (de) |
EP (1) | EP0733933A1 (de) |
JP (1) | JP2976273B2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3941675A1 (de) * | 1989-12-18 | 1991-06-20 | Continental Ag | Verbindung fuer stahlseil-foerdergurte |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000221460A (ja) * | 1999-02-04 | 2000-08-11 | Matsushita Electric Ind Co Ltd | マルチチャンネル光変調素子 |
DE10190655D2 (de) * | 2000-02-25 | 2003-01-30 | Sensirion Ag Zuerich | Sensor und Sigma-Delta-Konverter |
JP4296710B2 (ja) | 2000-12-13 | 2009-07-15 | コニカミノルタビジネステクノロジーズ株式会社 | 回折素子 |
DE10113788A1 (de) * | 2001-03-21 | 2002-09-26 | Zeiss Carl | Beugungsoptische Komponente, Beleuchtungssystem und Belichtungssystem mit einer solchen beugungsoptischen Komponente und Belichtungsverfahren unter Verwendung eines solchen Belichtungssystems |
KR101826740B1 (ko) | 2011-06-28 | 2018-03-22 | 삼성전자주식회사 | 다층 나노 구조를 갖는 음향광학 소자, 및 상기 음향광학 소자를 이용한 광 스캐너, 광 변조기 및 디스플레이 장치 |
WO2018140938A1 (en) | 2017-01-30 | 2018-08-02 | The Charles Stark Draper Laboratory, Inc. | Saw modulators and light steering methods |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5083856A (en) * | 1989-09-25 | 1992-01-28 | Fuji Photo Film Co., Ltd. | Waveguide-type acoustooptic device |
DE4406501A1 (de) * | 1993-03-02 | 1994-09-08 | Murata Manufacturing Co | Elastisches Faltungsglied |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4127320A (en) * | 1977-06-29 | 1978-11-28 | Bell Telephone Laboratories, Incorporated | Multimode optical modulator/switch |
DE3023147A1 (de) * | 1980-06-20 | 1982-01-07 | Siemens AG, 1000 Berlin und 8000 München | Planare wellenleiterlinse, ihre verwendung und verfahren zu ihrer herstellung |
US4544230A (en) * | 1983-01-19 | 1985-10-01 | Battelle Development Corporation | Method of evaluating a polynomial function using an array of optical modules |
US4544229A (en) * | 1983-01-19 | 1985-10-01 | Battelle Development Corporation | Apparatus for evaluating a polynomial function using an array of optical modules |
US5002349A (en) * | 1989-11-29 | 1991-03-26 | Bell Communications Research, Inc. | Integrated acousto-optic filters and switches |
-
1995
- 1995-03-24 JP JP7091681A patent/JP2976273B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-19 EP EP96104354A patent/EP0733933A1/de not_active Withdrawn
- 1996-03-19 US US08/616,528 patent/US5657152A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5083856A (en) * | 1989-09-25 | 1992-01-28 | Fuji Photo Film Co., Ltd. | Waveguide-type acoustooptic device |
DE4406501A1 (de) * | 1993-03-02 | 1994-09-08 | Murata Manufacturing Co | Elastisches Faltungsglied |
US5444322A (en) * | 1993-03-02 | 1995-08-22 | Murata Manufacturing Co., Ltd. | Elastic convolver |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3941675A1 (de) * | 1989-12-18 | 1991-06-20 | Continental Ag | Verbindung fuer stahlseil-foerdergurte |
Also Published As
Publication number | Publication date |
---|---|
JP2976273B2 (ja) | 1999-11-10 |
US5657152A (en) | 1997-08-12 |
JPH08262506A (ja) | 1996-10-11 |
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