EP0709891A1 - Über logische Niveaus ansteuerbarer Thyristor - Google Patents

Über logische Niveaus ansteuerbarer Thyristor Download PDF

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Publication number
EP0709891A1
EP0709891A1 EP95410123A EP95410123A EP0709891A1 EP 0709891 A1 EP0709891 A1 EP 0709891A1 EP 95410123 A EP95410123 A EP 95410123A EP 95410123 A EP95410123 A EP 95410123A EP 0709891 A1 EP0709891 A1 EP 0709891A1
Authority
EP
European Patent Office
Prior art keywords
region
type
conductivity
thyristor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95410123A
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English (en)
French (fr)
Other versions
EP0709891B1 (de
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
SGS Thomson Microelectronics SA
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Publication of EP0709891A1 publication Critical patent/EP0709891A1/de
Application granted granted Critical
Publication of EP0709891B1 publication Critical patent/EP0709891B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device

Definitions

  • the present invention relates to a thyristor intended to be controlled directly by logic signals supplied by a microcontroller and incorporating a gate voltage level translator circuit. It applies in particular to regulated battery charger circuits in which regulation is ensured at the secondary of a transformer.
  • the invention applies to configurations in which a charger circuit is incorporated between the terminals of the secondary of a transformer and a battery charging terminal, the other terminal of the battery being connected to ground.
  • Examples of such circuits are known in the art. They generally include a power switch controlled by switching to provide a constant average current to the battery. They also include an integrated control circuit or microcontroller, for example the circuit marketed under the reference ST62 by SGS-Thomson, and an integrated voltage regulation circuit capable of supplying a regulated supply of determined value, for example +5 volts, in particular for the control circuit.
  • the microcontroller receives information on the current in the battery, for example by detecting the voltage across a resistor arranged in series with the battery.
  • such battery charger circuits therefore comprise two integrated circuits, the microcontroller and the voltage regulation circuit, and a certain number of discrete components corresponding in particular to one or more power switches, to circuits for adapting the control signal and rectifiers intended to be connected to the power switch and to the supply terminal of the voltage regulation circuit.
  • the present invention relates more particularly to the case where the power switch or switches are thyristor type switches.
  • a study of existing thyristor circuits has shown that all of the discrete components associated with the thyristors and the rectification function cannot be produced in the form of a monolithic component.
  • An object of the present invention is to provide a monolithic component constituting a thyristor and elements for adapting a logic control signal.
  • Another object of the present invention is to provide such a monolithic component also incorporating straightening elements.
  • Another object of the present invention is to provide a switching circuit of a battery charger comprising only three components: a first component gathering all the power functions, a second component constituting a microcontroller known in itself and a third component constituting a voltage regulation circuit known per se.
  • the applicant has designed a new thyristor configuration, a new charger circuit configuration and a monolithic component incorporating all the power components of this circuit.
  • the present invention provides a thyristor controllable by logic levels whatever its cathode voltage, comprising a thyristor, a transistor PNP between trigger and thyristor anode, and an NPN transistor between the base of the PNP transistor and a terminal connected to ground via a resistor, the base of the NPN transistor receiving said logic signals.
  • the present invention also provides a battery charger switching circuit disposed on the secondary of a transformer to charge a battery under conditions fixed by an integrated switching control circuit, comprising the aforementioned thyristor and rectifier diodes connected between the terminals of the secondary of the transformer and the anode of the thyristor.
  • This circuit can also include a terminal suitable for supplying a regulated voltage supply circuit, and a diode connected between the common point of the first and second diodes and said terminal.
  • the above-mentioned thyristor comprises, in a substrate of a first type of conductivity with low doping level, a box thyristor comprising, on the side of the underside of the substrate, a first region of the second conductivity type, an insulating wall of the second conductivity type extending from the upper surface of the substrate to the periphery of the first region, on the side of the upper face of the substrate, a second region of the second conductivity type and a third region of the first type of conductivity formed in the third region; in a portion of the region of the substrate delimited by the isolation wall, a fourth region of the second type of conductivity and, in this fourth region, a fifth region of the first type of conductivity; and first to fourth metallizations respectively in contact with the rear face of the substrate, the third region, the fourth region and the fifth region.
  • the present invention also provides a switching circuit of a battery charger arranged on the secondary of a transformer for charging a battery under conditions fixed by an integrated switching control circuit, comprising a first and a second thyristor as mentioned above between each of the transformer terminals and a battery supply terminal, and rectifier diodes between each transformer terminals and a common power supply terminal.
  • the above-mentioned thyristor comprises, in a substrate of a first type of conductivity with low doping level, a first layer of the second type of conductivity, on the side of the rear face of the substrate, a insulation wall of the second type of conductivity extending from the upper face of the substrate to the periphery of the first layer, on the side of the upper face of the substrate, of the second regions and of the third regions of the second type of conductivity, of the fourth regions of the first type of conductivity formed in the third regions, a fifth region of the second type of conductivity formed on the side of the rear face of the substrate, first metallizations integral with each of the second regions, a second metallization integral with the third regions, a third united metallization of the fourth regions, and a fourth metallization secured to the rear face.
  • a switching battery charger circuit connected to the secondary of a transformer 1 at mid-point connected to ground, generally comprises various components constituting a power circuit 2, a battery to be charged 3 , a regulated voltage supply circuit 4 and a microcontroller 5.
  • the power circuit 2 includes input terminals A and B connected to the secondary of the transformer 1, a battery supply terminal C 3, a DC voltage supply terminal D of the regulated voltage supply circuit 4, and a terminal E for receiving the control signal supplied by the circuit 5.
  • the regulated voltage supply circuit 4 supplies a regulated voltage of 5 volts intended to supply the microcontroller 5.
  • This microcontroller 5 in addition to its power input, comprises a regulation input F which corresponds for example to a socket voltage on a resistor in series with the battery 3.
  • the microcontroller 5 provides on the terminal E logic control signals which have a low level corresponding to the ground level and a high level of approximately 5 V relative to the ground . These logic signals do not make it possible to directly control the trigger of a thyristor whose cathode is not grounded, and which is for example at the high potential of a battery. It is then necessary to provide a circuit for adapting the logic control signals or level translator circuit.
  • Circuit 2 comprises rectifying elements intended to supply the rectified voltage of the secondary of the transformer, on the one hand, to the anode of a power switch, on the other hand, at terminal D.
  • these rectifying elements include diodes D1, D2, D3.
  • the anodes of diodes D1 and D2 are connected to the two terminals of the secondary of the transformer, and the cathodes of diodes D1 and D2 are connected to the anode of a thyristor Th and to the anode of diode D3.
  • the diode D3 is intended to prevent a return of the voltage on the terminal D towards the anode of the thyristor Th during the low voltage passages of the voltage at the secondary of the transformer.
  • the circuit for adapting the control signals arriving at the terminal E consists of a PNP transistor connected between the anode and trigger of the thyristor Th and an NPN transistor connected between the base of the PNP transistor and a terminal G connected to ground. via a current limiting resistor R.
  • the control signals on terminal E are applied to the base of the NPN transistor.
  • the NPN and PNP transistors become conducting and the anode of the thyristor is connected to its trigger, which makes the thyristor passing as soon as the voltage on its anode is sufficiently higher than the voltage on its cathode.
  • This adaptation circuit and its embodiment in the form of a monolithic component constitute an aspect of the present invention.
  • FIG. 2 represents an alternative embodiment in which the transformer 1 is not a transformer whose secondary has a midpoint which can be connected to ground.
  • the terminals A and B are connected to ground by respective diodes D4 and D5, the anodes of which are grounded.
  • Figure 3 very schematically shows a sectional view of a semiconductor component incorporating the elements of circuit 2 of Figure 1. It will be clear to those skilled in the art that this diagram is not to scale or in the vertical dimension or in the horizontal dimension. In particular, the surfaces of the various elements will be chosen according to the maximum currents likely to pass through them. With regard to the doping levels and the junction depths, reference will be made to the general knowledge of a person skilled in the art in the field.
  • the component of FIG. 3 is constructed from a substrate 11 of lightly doped N-type monocrystalline silicon.
  • a box thyristor i.e. a thyristor in which a P-type layer 12 is formed from the lower surface of the substrate and is joined at its periphery by a wall P-type insulation 13 formed from the upper surface.
  • This thyristor which constitutes the thyristor Th of FIG. 1, comprises the aforementioned layer 12, corresponding to its anode, a portion 21 of the substrate and, on the side of the upper surface, a first P-type region 14 in which is formed a type N region 15 constituting the cathode.
  • Region 22 is coated with a metallization E, region 23 with a metallization G, region 15 with a metallization C, and the rear face of the substrate with a metallization M2.
  • These metallizations correspond to the terminals of the same name in FIG. 1.
  • the metallization M2 corresponds to the anode of the thyristor Th.
  • the thyristor Th comprising the layers 12-21-14-15 between the terminals M2 and C.
  • the PNP transistor connected between anode and trigger of the thyristor Th correspond to part of this thyristor and more particularly at layers 12-21-14.
  • the NPN transistor has an emitter which corresponds to the region 23 connected to the terminal G, a base which corresponds to the region 22 connected to the terminal E and a collector which corresponds to the layer 21, that is to say to the base region of the PNP transistor.
  • an N-type region 28 being formed within the region 27 From the lower surface of the substrate 11, under the regions 25, 26 and 27, is preferably formed a heavily doped N-type region 29.
  • FIG. 4 represents a variant of the charger circuit 2 illustrated in FIG. 1.
  • a first thyristor Th1 is disposed between the terminals A and C and a second thyristor Th2 is disposed between the terminals B and C.
  • Diodes D6 and D7 are connected between each of the terminals A and B and the terminal D.
  • a each of the thyristors Th1 and Th2 is associated with a transistor PNP1, PNP2, in the same way as the transistor PNP with the thyristor Th in FIG. 1.
  • An NPN transistor is connected between the common bases of the transistors PNP1 and PNP2 and the terminal G. base of this NPN transistor is connected to terminal E.
  • An advantage of the circuit of FIG. 4 compared to the circuit of FIG. 1 is that the losses are reduced because the supply of the battery is done only by means of a thyristor whereas, in the case of the circuit of the Figure 1, it is done by the series connection of a diode and a thyristor.
  • circuit of FIG. 4 lends itself to particularly simple integration.
  • FIG. 5A represents a schematic sectional view of a component using all of the elements contained in the circuit 2 of FIG. 4.
  • This component is formed from a substrate N of low doped N type.
  • a P 32 layer is formed from the bottom surface of the substrate and a P 33 type peripheral ring is formed from the top surface.
  • a first P-type region 34 and a second P-type region 35 are formed from the upper surface.
  • region 35 a region 36 is formed. of type N.
  • Regions 34, 35, 36 are respectively coated with metallizations A, E, and G. Under the whole of region 35 and most of region 34 is formed from the underside of a region 37 type N.
  • a thyristor a PNP transistor connected between its anode and its trigger and an NPN transistor connected between the base of the PNP transistor and an external terminal.
  • the thyristor consists of regions 34, 31, 32 and 37, region 34 corresponding to its anode and region 37 to its cathode.
  • the PNP transistor corresponds to regions 34, 31 and 32, region 34 corresponding to its emitter.
  • the NPN transistor corresponds to regions 36, 35 and 31, region 36 corresponding to its emitter. This set corresponds well to a thyristor associated with a level translator circuit.
  • the present invention provides for inserting into the anode region of the thyristor an N-type region 38 connected to a metallization D, the diode D6 (or D7) consisting of the junction between regions 34 and 38.
  • Figure 5A is a sectional view along line AA of Figure 5B.
  • the same references as in FIG. 5A designate the same regions.
  • Award-winning references designate the elements of the second half of the structure.
  • the metallizations have not been shown to simplify the figure.
  • Region 34 ' is integral with terminal B, region 35' as region 35 is connected to terminal E, region 36 'as region 36 is connected to terminal G and region 38' as region 38 is connected to terminal D.
  • This circuit is susceptible of numerous variants within the reach of those skilled in the art who can make the various variants and modifications customary therein in the field of producing thyristors and diodes.
  • the component according to the invention can be connected to the terminals A and B of FIG. 2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Power Conversion In General (AREA)
EP95410123A 1994-10-28 1995-10-24 Über logische Niveaus ansteuerbarer Thyristor Expired - Lifetime EP0709891B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9413147 1994-10-28
FR9413147A FR2726398B1 (fr) 1994-10-28 1994-10-28 Thyristor commandable par des niveaux logiques

Publications (2)

Publication Number Publication Date
EP0709891A1 true EP0709891A1 (de) 1996-05-01
EP0709891B1 EP0709891B1 (de) 2000-08-30

Family

ID=9468473

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95410123A Expired - Lifetime EP0709891B1 (de) 1994-10-28 1995-10-24 Über logische Niveaus ansteuerbarer Thyristor

Country Status (5)

Country Link
US (1) US5699008A (de)
EP (1) EP0709891B1 (de)
JP (1) JP2657371B2 (de)
DE (1) DE69518602T2 (de)
FR (1) FR2726398B1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2750536A1 (fr) * 1996-06-28 1998-01-02 Sgs Thomson Microelectronics Reseau de triacs a gachettes referencees par rapport a une electrode commune de face opposee
EP0818825A1 (de) * 1996-07-12 1998-01-14 STMicroelectronics S.A. Monolithische Montage von Thyristoren mit gemeinsamer Kathode
FR2800513A1 (fr) * 1999-11-03 2001-05-04 St Microelectronics Sa Detecteur d'etat de composant de puissance
US6480056B1 (en) 1997-06-09 2002-11-12 Sgs-Thomson Microelectronics S.A. Network of triacs with gates referenced with respect to a common opposite face electrode

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032937B2 (en) * 2016-11-11 2018-07-24 Semiconductor Components Industries, Llc Monolithic series switching semiconductor device having low-resistance substrate contact structure and method
FR3113792B1 (fr) * 2020-08-28 2022-10-28 St Microelectronics Tours Sas Dispositif de commande d'une diode OFT

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2234662A1 (de) * 1973-06-21 1975-01-17 Sony Corp
EP0011443A1 (de) * 1978-11-08 1980-05-28 Hitachi, Ltd. Integrierte Halbleiterschaltung
GB2069255A (en) * 1980-02-05 1981-08-19 Williams B W Thyristor circuit
JPS5775599A (en) * 1980-10-27 1982-05-12 Nippon Denso Co Ltd Voltage regulator for magne type generator
EP0214027A1 (de) * 1985-08-06 1987-03-11 Thomson-Csf Empfindlicher Thyristor mit integrierter Entkopplung von Gate und Kathode
DE3810536A1 (de) * 1987-03-28 1988-10-13 Hitachi Ltd Halbleiterschaltkreis
EP0599739A1 (de) * 1992-10-29 1994-06-01 STMicroelectronics S.A. Thyristor und Aufbau von Thyristoren mit gemeinsamer Katode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3781631A (en) * 1972-02-11 1973-12-25 Heath Co Automatic battery charger
US3781632A (en) * 1973-02-23 1973-12-25 Sno Start Inc Series type solid state voltage regulator which provides constant voltage to a storage device
JPS5232944B2 (de) * 1973-12-15 1977-08-25
FR2347780A1 (fr) * 1976-07-21 1977-11-04 Bicosa Recherches Perfectionnements apportes a un element bistable et circuit interrupteur comportant un tel element bistable
US5410238A (en) * 1990-07-13 1995-04-25 Hitachi Koki Co., Ltd. Rapid battery charger with slow charge mode at a low temperature

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2234662A1 (de) * 1973-06-21 1975-01-17 Sony Corp
EP0011443A1 (de) * 1978-11-08 1980-05-28 Hitachi, Ltd. Integrierte Halbleiterschaltung
GB2069255A (en) * 1980-02-05 1981-08-19 Williams B W Thyristor circuit
JPS5775599A (en) * 1980-10-27 1982-05-12 Nippon Denso Co Ltd Voltage regulator for magne type generator
EP0214027A1 (de) * 1985-08-06 1987-03-11 Thomson-Csf Empfindlicher Thyristor mit integrierter Entkopplung von Gate und Kathode
DE3810536A1 (de) * 1987-03-28 1988-10-13 Hitachi Ltd Halbleiterschaltkreis
EP0599739A1 (de) * 1992-10-29 1994-06-01 STMicroelectronics S.A. Thyristor und Aufbau von Thyristoren mit gemeinsamer Katode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 6, no. 155 (E - 125) 17 August 1982 (1982-08-17) *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2750536A1 (fr) * 1996-06-28 1998-01-02 Sgs Thomson Microelectronics Reseau de triacs a gachettes referencees par rapport a une electrode commune de face opposee
EP0817277A1 (de) * 1996-06-28 1998-01-07 STMicroelectronics S.A. TRIAC-Anordnung, deren Gatterreferenzspannung an gemeinsame Elektrode auf Rückseite gelegt wird
US6034381A (en) * 1996-06-28 2000-03-07 Sgs-Thomson Microelectronics S.A. Network of triacs with gates referenced with respect to a common opposite face electrode
EP0818825A1 (de) * 1996-07-12 1998-01-14 STMicroelectronics S.A. Monolithische Montage von Thyristoren mit gemeinsamer Kathode
FR2751133A1 (fr) * 1996-07-12 1998-01-16 Sgs Thomson Microelectronics Assemblage monolithique de thyristors a cathode commune
US5914502A (en) * 1996-07-12 1999-06-22 Sgs-Thomson Microelectronics S.A. Assembly of thyristors having a common cathode
US6480056B1 (en) 1997-06-09 2002-11-12 Sgs-Thomson Microelectronics S.A. Network of triacs with gates referenced with respect to a common opposite face electrode
FR2800513A1 (fr) * 1999-11-03 2001-05-04 St Microelectronics Sa Detecteur d'etat de composant de puissance
EP1098355A1 (de) * 1999-11-03 2001-05-09 STMicroelectronics S.A. Leistungsdetektor-Bauteil

Also Published As

Publication number Publication date
JP2657371B2 (ja) 1997-09-24
EP0709891B1 (de) 2000-08-30
FR2726398B1 (fr) 1997-01-17
US5699008A (en) 1997-12-16
DE69518602D1 (de) 2000-10-05
FR2726398A1 (fr) 1996-05-03
DE69518602T2 (de) 2001-04-19
JPH08298241A (ja) 1996-11-12

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