EP0694990A1 - Verfahren zur selektiven Metallisierung von aus Kunststoff geformten Verbindern - Google Patents

Verfahren zur selektiven Metallisierung von aus Kunststoff geformten Verbindern Download PDF

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Publication number
EP0694990A1
EP0694990A1 EP94202140A EP94202140A EP0694990A1 EP 0694990 A1 EP0694990 A1 EP 0694990A1 EP 94202140 A EP94202140 A EP 94202140A EP 94202140 A EP94202140 A EP 94202140A EP 0694990 A1 EP0694990 A1 EP 0694990A1
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EP
European Patent Office
Prior art keywords
metal layer
connector
cavity
depositing
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP94202140A
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English (en)
French (fr)
Inventor
Ronald Cornelis Maria Bekker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Connector Systems Technology NV
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Connector Systems Technology NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Connector Systems Technology NV filed Critical Connector Systems Technology NV
Priority to EP94202140A priority Critical patent/EP0694990A1/de
Publication of EP0694990A1 publication Critical patent/EP0694990A1/de
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/648—Protective earth or shield arrangements on coupling devices, e.g. anti-static shielding  
    • H01R13/658—High frequency shielding arrangements, e.g. against EMI [Electro-Magnetic Interference] or EMP [Electro-Magnetic Pulse]
    • H01R13/6598—Shield material
    • H01R13/6599—Dielectric material made conductive, e.g. plastic material coated with metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/18—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for manufacturing bases or cases for contact members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/648—Protective earth or shield arrangements on coupling devices, e.g. anti-static shielding  
    • H01R13/658—High frequency shielding arrangements, e.g. against EMI [Electro-Magnetic Interference] or EMP [Electro-Magnetic Pulse]
    • H01R13/6581—Shield structure

Definitions

  • the present invention relates to a method for selective metallization of plastic connectors.
  • noise countermeasures have to be taken on different levels.
  • connections have to be made between on-board grounding and frame-grounding points to provide overall good grounding.
  • shielding will have to be provided on cabinets besides establishment of a proper connection between connector casings and cable's woven metal sheaths, in order to reduce interference noise emission.
  • filter elements may be used in series with signal lines, in order to reduce line-carried noise interferences.
  • special wiring techniques may be used in order to reduce cross-talk between adjacent signal lines within cables or within cabinets.
  • Figure 1a to 1f show different connector configurations, known as such, each having its own range of application.
  • Figure 1a represents a conventional lower frequency application in which a connector 1 comprises several, e.g. 7, adjacent signal contact members 2. There is mutual coupling between adjacent signal contact members 2 and signal integrity may not be a concern.
  • connector 1 comprises six signal contact members 2 and one ground contact member 3 at an arbitrary location.
  • ground contact member 3 mutual inductance and capacitance to ground may be varied. Locating, for instance, the ground contact member 3 in the middle of the connector 1 would reduce the electrical loop length and would somewhat improve the performance.
  • connector 1 comprises several signal contact members 2 and several ground contact members 3.
  • the signal contact members 2 and ground contact members 3 alternate.
  • the loop length is significantly reduced.
  • There is less coupling via mutual impedance, and noise suppression with improved signal transmission is established.
  • Such a configuration is easily achieved with conventional connectors by appropriate rooting and pole assignments. This does, however, imply a reduction of the number of signal contact members 2 in the connector 1, which reduces I/O density.
  • connector 1 comprises seven adjacent signal contact members 2 and a ground plane 4 at one of its side surfaces.
  • the ground plane 4 may be a metal plate, whereby the loop length can be further reduced. This then, can be a means of achieving further electrical enhancement of the connector 1 for the digital transmission of signals with a larger number of signal pins.
  • the ground plane 4 is a better barrier to suppress unwanted stray EMI noise emitted from components adjacent to the connector.
  • Figure 1e shows connector 1 with seven adjacent signal contact members 2 and a further ground plane 5 at a side surface of connector 1 opposite to ground plane 4, thereby further improving the high speed electrical performance.
  • the connector 1 can be entirely enclosed by a shielding 6 which is similar to a Faraday cage and shields the signal contact members 2 from any outside electromagnetic radiation.
  • one or more of the signal contact members 2 may be substituted by a ground contact member 3 to reduce cross-talk between the signal contact members 2.
  • Figure 2 shows a chart developed to compare multi-row connection structures in terms of anticipated high-speed performance, in the context of high I/O and miniaturization needs.
  • the chart is based on conventional knowledge in the field.
  • In the bottom row of the chart according to figure 2 several connector configurations are schematically depicted.
  • In the three rows above the bottom row the performance of each of these connector configurations as regards cross-talk, impedance matching, and signal density mounting is indicated by symbols explained under the chart.
  • coaxial connectors out-perform other configurations. However, they are expensive and in general they do not satisfy the drive towards miniaturization and the need for connector modularity and systems approach.
  • Pseudo-coaxial and electrically enhanced ground-planes are effective means in most modern electronic circuitries.
  • the first connector configuration shown relates to a 1:1 arrangement of alternating signal contact members and ground contact members.
  • the arrangement may have another ratio, as shown in figure 3.
  • the transmission performance will be reduced.
  • US Patent 4,600,480 discloses a method to selectively plate a connector comprising the steps of providing an electroless metal layer over all of first selected surfaces, and electroplating the first selected surfaces twice. Second selected surfaces are not plated by the electroplating step.
  • this known method will only work under various specific conditions. As long as the first and second selected surfaces are subjected to the same external conditions the known method is not able to distinguish the first from the second selected surfaces and, therefore, under those conditions no selective metallization will be established. Moreover, no sharp transitions between the first and second selected surfaces can be expected by this known method.
  • Selective plating of connector elements may also be done by sputtering techniques, as e.g. disclosed by US Patent 4,932,888 or by the application of conductive ink, as disclosed in US Patent 4,846,724.
  • sputtering techniques as e.g. disclosed by US Patent 4,932,888 or by the application of conductive ink, as disclosed in US Patent 4,846,724.
  • neither of these latter techniques leads to very accurate transitions between those parts being plated and those parts being not plated.
  • Japanese patent application 54.67690 discloses the use of light beams, laser beams or electron beams to separate an integrally made conductive metal layer on a substrate into several conductive metal lines.
  • the object of the present invention is to provide a method for selective metallization of connectors by which a very accurate distinction between plated and not plated surface areas can be obtained.
  • the method for selective metallization of a plastic connector comprises the steps of:
  • the present invention is based on the insight that the use of means to ablate one or more very small traces of an integrally made metal layer on a connector, by which traces several metal layer areas on the connector surface are established which are no longer electrically interconnected may result in, very accurate transitions between plated and not plated surface areas on the connector.
  • a high energy beam may be used which is selected to be one of the following particle beams: an electron beam or ion beam.
  • an electron beam or ion beam may be used.
  • a light beam or a laser beam may be used.
  • the ablating step may be carried out by grinding, e.g. by any suitable, high precision abrasive stream of particles.
  • Removal of the non-selected metal layer areas as defined in step d. above may be done by chemical etching or by grinding.
  • the diameter of the high energy beam may be about 75 ⁇ m.
  • the first metal layer may comprise electroless copper or nickel.
  • the first thickness may be between 1 to 2 ⁇ m.
  • the second metal layer preferably comprises galvanically deposited copper.
  • the second thickness preferably is between 5 to 10 ⁇ m.
  • Step a. defined above may be preceded by immersing the connector in an alkaline bath to roughen its surface in contact with said bath.
  • step d. defined above may be followed by e. depositing a top coat finish layer on said second copper layer, selected to be one of the following group of metals: nickel, gold, or tin-lead.
  • Said finish layer may have a thickness between 2 to 4 ⁇ m.
  • the proposed method offers great flexibility since metallized and not metallized parts of the connector surface may be separated by ablating traces of a first, very thin metal layer on the connector surface and these traces may have any predetermined contour.
  • FIGS 1a to 1f show various connector configurations known from the prior art, in which shielding and/or grounding enhances connector performance.
  • Figure 2 shows a chart based on knowledge in the field and in which several connector configurations are compared as to several electrical characteristics.
  • Figure 3 shows some more possible connector configurations besides the ones shown in figure 2.
  • Figures 4a to 4f show selective plastic metallization process steps according to the invention.
  • FIGS 5a to 5f show application of the process according to the invention to one specific connector.
  • FIG. 4 shows the subsequent steps according to the present invention.
  • step 1 (figures 4a and 4b) an electroless metal layer 11 of a first predetermined thickness is deposited on the surface of a connector 10.
  • the electroless metal layer 11 is preferably of copper, whereas the thickness of electroless metal layer 11 is preferably between 1 to 2 ⁇ m.
  • one or more predetermined traces 12 are ablated from the first metal layer 11 to produce at least two electrically separate metal layer areas 11a, 11b.
  • the ablation of traces 12 from metal layer 11 may be done by an electron beam, an ion beam, a light beam, a laser beam, or any other high energy beam. It is envisaged that also grinding by sand-blasting or ice-blasting, or the like, may be applied to make the traces 12.
  • These traces 12 surround the separate metal layer areas 11a, 11b, in a predetermined way in order to have isolated metal layer areas 11a, 11b.
  • a second metal layer of a second predetermined thickness is galvanically deposited on selected metal layer area 11b and not on metal layer area 11a. This can be easily achieved by emersion of the intermediate product of figure 4c in an electrolyte and applying a negative voltage to selected area 11b and not to area 11a. Then additional copper 13 of, for instance 5 to 10 ⁇ m, may be deposited on selected metal layer 11b, whereas not selected metal layer area 11a remains unchanged in thickness to its initial thickness of 1 to 2 ⁇ m.
  • the product obtained is subjected to selective removal of the unchanged metal layer areas 11a. This may be done by emersion of the product obtained after the preceding step in figure 4d in an etch bath, long enough to etch at least 2 ⁇ m of copper. After that step, in which also some of the galvanically deposited copper layer 13 on the selected metal layer area 11b will be etched, still enough of the galvanically deposited copper layer 13 remains.
  • a finishing layer 14 to protect the galvanically deposited copper layer 13, may be applied to layer 13. Finishing layers of other suitable metals, like gold or tin-lead, may be applied alternatively. Preferably, the finishing layer 14 has a thickness of 2 to 4 ⁇ m.
  • the removal of the metal layer area 11a may be done by any suitable method: instead of a chemical etching process indicated above also grinding may be used.
  • the diameter of the cross-section of the traces 12 may be as small as 75 ⁇ m.
  • the galvanically deposited metal layer 13 may be made of any suitable metal.
  • the step of depositing electroless copper layer 11 may be preceded by immersing the connector 10 in an alkaline bath to roughen the connector's surface in contact with said bath. Thus, micropores may be obtained which enhance the contact strength between the electroless copper layer 11 and the connector 10.
  • Figures 5a to 5f show the application of the method according to figures 4a to 4f to a connector body in order to yield a shielded connector body.
  • Figure 5a shows the surface of connector 10 which may be chemically roughened in a first step. However, this step may be omitted.
  • first metal layer area 11a and second metal layer area 11b are ablated from the electroless copper layer 11 to obtain first metal layer area 11a and second metal layer area 11b.
  • the first metal layer area 11a covers the inside surfaces of all cavities 15 of connector 10, which cavities 15 are intended to accommodate suitable contact members (not shown) afterwards.
  • the second metal layer area 11b covers roughly the outside surface of connector 10.
  • First metal layer are 11a and second metal layer area 11b are electrically separated by traces 12.
  • a galvanically deposited copper layer 13 is applied to the second metal layer area 11b according to the process step described above in accordance with figure 4d.
  • the first metal layer are 11a remains unchanged.
  • the first metal layer area 11a covering the inside surfaces of the cavities 15 is removed, e.g. by chemically etching. By that etching step the thickness of the galvanically deposited copper layer 13 is also somewhat reduced.
  • a finishing layer 14 preferably made of nickel, is applied to the galvanically deposited copper layer 13.
  • any other suitable metal layer may be used instead.
  • the end product shown in figure 5f is a connector 10 having a body which is entirely shielded at its outside surface.
  • the connector shown in figures 5a to 5f only relate to one example.
  • the method according to the invention was tested for a connector made of a polymer resin for high temperatures, known as Vectra A130.
  • the tests have shown that this material is appropriate to be selectively metallised by the proposed method.
  • the tests have shown that the electrical performance of a connector selectively shielded by the proposed method is similar to the electrical performance of a connector having separate metal shieldings.
  • Vectra A130 has shown good results, the method according to the invention is not restricted to the application of this polymer resin only. The use of any other suitable polymer resin falls within the scope of the present invention.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
EP94202140A 1994-07-22 1994-07-22 Verfahren zur selektiven Metallisierung von aus Kunststoff geformten Verbindern Withdrawn EP0694990A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP94202140A EP0694990A1 (de) 1994-07-22 1994-07-22 Verfahren zur selektiven Metallisierung von aus Kunststoff geformten Verbindern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94202140A EP0694990A1 (de) 1994-07-22 1994-07-22 Verfahren zur selektiven Metallisierung von aus Kunststoff geformten Verbindern

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0807963A2 (de) * 1996-05-10 1997-11-19 Itt Manufacturing Enterprises, Inc. Verfahren zum Bearbeiten von Seitenflächen elektronischer Elemente
WO1999016147A1 (en) * 1997-09-23 1999-04-01 Ericsson, Inc. Switchable matching circuits using three-dimensional circuit carriers
FR2780560A1 (fr) * 1998-06-30 1999-12-31 Framatome Connectors Int Connecteur pour signaux a haute frequence
WO2003004261A1 (en) * 2001-07-03 2003-01-16 N.V. Bekaert S.A. Layered structure providing shielding characteristics
EP1317027A1 (de) * 2001-11-30 2003-06-04 DDK Ltd. Elektrischer Verbinder
EP1755200A3 (de) * 2005-08-18 2008-08-06 IMS Connector Systems GmbH Gehäuse für elektrische Steckverbindungen
FR2917541A1 (fr) * 2007-06-15 2008-12-19 Souriau Soc Par Actions Simpli Ensemble de connexion sub-miniature blinde
US7670180B2 (en) 2007-06-15 2010-03-02 Souriau Shielded subminiature connection assembly and process of forming such an assembly

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3885076A (en) * 1973-05-09 1975-05-20 Bell Telephone Labor Inc Electron beam generated patterns of metal-containing polymers
JPS6263683A (ja) * 1985-09-13 1987-03-20 Ube Ind Ltd 模様を有するメツキ層の形成法
US4822633A (en) * 1984-01-17 1989-04-18 Inoue Japax Research Incorporated Auto-selective metal deposition on dielectric surfaces
US4882200A (en) * 1987-05-21 1989-11-21 General Electric Company Method for photopatterning metallization via UV-laser ablation of the activator
EP0506260A2 (de) * 1991-03-25 1992-09-30 Hughes Aircraft Company Zusammenschaltung von gegenüberliegenden Seiten einer Schaltplatine

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3885076A (en) * 1973-05-09 1975-05-20 Bell Telephone Labor Inc Electron beam generated patterns of metal-containing polymers
US4822633A (en) * 1984-01-17 1989-04-18 Inoue Japax Research Incorporated Auto-selective metal deposition on dielectric surfaces
JPS6263683A (ja) * 1985-09-13 1987-03-20 Ube Ind Ltd 模様を有するメツキ層の形成法
US4882200A (en) * 1987-05-21 1989-11-21 General Electric Company Method for photopatterning metallization via UV-laser ablation of the activator
EP0506260A2 (de) * 1991-03-25 1992-09-30 Hughes Aircraft Company Zusammenschaltung von gegenüberliegenden Seiten einer Schaltplatine

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANONYMOUS: "Automated system for thin film circuit repair-relies on formation of micro plasma to remove organic debris and subsequent metal deposition", RESEARCH DISCLOSURE, vol. 316, no. 105, 10 August 1990 (1990-08-10), HAVANT GB *
ANONYMOUS: "Mfr. of PCB - is by selective laser ablation of plastic covered substrate", RESEARCH DISCLOSURE, vol. 326, no. 046, 10 June 1991 (1991-06-10), HAVANT GB *
PATENT ABSTRACTS OF JAPAN vol. 11, no. 262 (C - 442) 25 August 1987 (1987-08-25) *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0807963A2 (de) * 1996-05-10 1997-11-19 Itt Manufacturing Enterprises, Inc. Verfahren zum Bearbeiten von Seitenflächen elektronischer Elemente
EP0807963A3 (de) * 1996-05-10 1999-01-07 General Semiconductor Ireland Verfahren zum Bearbeiten von Seitenflächen elektronischer Elemente
WO1999016147A1 (en) * 1997-09-23 1999-04-01 Ericsson, Inc. Switchable matching circuits using three-dimensional circuit carriers
US5986607A (en) * 1997-09-23 1999-11-16 Ericsson, Inc. Switchable matching circuits using three dimensional circuit carriers
FR2780560A1 (fr) * 1998-06-30 1999-12-31 Framatome Connectors Int Connecteur pour signaux a haute frequence
EP0969571A1 (de) * 1998-06-30 2000-01-05 Framatome Connectors International Verbinder
WO2003004261A1 (en) * 2001-07-03 2003-01-16 N.V. Bekaert S.A. Layered structure providing shielding characteristics
US7026060B2 (en) 2001-07-03 2006-04-11 N.V. Bekaert S.A. Layered structure providing shielding characteristics
CN100375675C (zh) * 2001-07-03 2008-03-19 贝卡尔特股份有限公司 一种制造层结构的方法
EP1317027A1 (de) * 2001-11-30 2003-06-04 DDK Ltd. Elektrischer Verbinder
EP1755200A3 (de) * 2005-08-18 2008-08-06 IMS Connector Systems GmbH Gehäuse für elektrische Steckverbindungen
FR2917541A1 (fr) * 2007-06-15 2008-12-19 Souriau Soc Par Actions Simpli Ensemble de connexion sub-miniature blinde
US7670180B2 (en) 2007-06-15 2010-03-02 Souriau Shielded subminiature connection assembly and process of forming such an assembly

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