EP0645008A1 - Technique de detection de fin de traitement utilisant les determinations de la pente du signal - Google Patents

Technique de detection de fin de traitement utilisant les determinations de la pente du signal

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Publication number
EP0645008A1
EP0645008A1 EP93914123A EP93914123A EP0645008A1 EP 0645008 A1 EP0645008 A1 EP 0645008A1 EP 93914123 A EP93914123 A EP 93914123A EP 93914123 A EP93914123 A EP 93914123A EP 0645008 A1 EP0645008 A1 EP 0645008A1
Authority
EP
European Patent Office
Prior art keywords
signal
layer
breakthrough
values
condition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP93914123A
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German (de)
English (en)
Inventor
Herbert E. Litvak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxtron Corp
Original Assignee
Luxtron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Luxtron Corp filed Critical Luxtron Corp
Publication of EP0645008A1 publication Critical patent/EP0645008A1/fr
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination

Definitions

  • This invention relates generally to techniques of signal processing that result in determining when a particular stage of a changing condition has been reached, either for the purpose of observation or for automatically controlling the events causing the condition to change, an example being the monitoring of an electrical signal in order to determine when an endpoint has been reached in a semiconductor processing operation such as photoresist development or etching operations.
  • the mask is formed by exposing the photoresist layer to light in the desired pattern, followed by developing the photoresist layer through application of a developer solution to it. With the usual photoresist material, the exposed regions are removed during the development process to expose the layer below.
  • the time at which the underlying layer first becomes exposed by removal of photoresist material is termed the "breakthrough" or "endpoint.”
  • the development process is allowed to continue for a period of time after breakthrough is first detected, the end of that period of time being the end of the development process, termed its "process end.”
  • the development process is monitored in order to determine when breakthrough occurs.
  • a beam of light of finite bandwidth is directed against the photoresist layer of one wafer of a batch and a reflected or transmitted light signal is then detected and the resulting electrical signal processed to determine when breakthrough occurs.
  • light reflected from both the top and bottom surfaces of the substantially transparent photoresist layer interferes at a photodetector.
  • the detected intensity of the reflected light cycles between a maximum and minimum as the material removal alters the relative phase between the two interfering beams.
  • the signal change being monitored is the slope of the electrical signal.
  • a digitized electrical signal is acquired and a group of contiguous digital signal values are utilized to calculate one signal slope value. Successive slope values are calculated from successive groups of contiguous digital samples, each group including at least some of the samples of the immediately preceding group but omitting at least the earliest acquired sample of the immediately preceding group.
  • the desired particular stage of a changing condition is determined to exist when the calculated slope values satisfy a preset criteria.
  • ESR electronic spin resonance
  • NMR nuclear magnetic resonance
  • temperature a species in a chemical composition
  • pressure a species in a chemical composition
  • acoustical signals change of index of refraction in response to changing chemical or physical parameters
  • flowometry colorimetry
  • strain gauge signals light dispersion
  • crystal frequency changes fluoro-immuno- assay techniques
  • Figure 1 schematically illustrates a semiconductor wafer photoresist layer development process in which the present invention is utilized
  • Figure 2 illustrates a modified photoresist development operation in which the present invention is utilized
  • Figure 3 is an electronic block diagram of an endpoint controller used in connection with either of the photoresist development systems of Figures 1 or 2;
  • Figure 4 schematically illustrates the optical monitoring of a photoresist layer that results in the electrical signal being processed
  • Figure 5A shows an example photodetector output signal obtained during photoresist development
  • Figure 5B is a calculated derivative of the photodetector output of Figure 5A;
  • Figure 6A and 6B illustrate, in enlarged cross-sectional views, two stages of a photoresist development process
  • Figure 7A and 7B illustrate, in enlarged cross-sec*:ional views, two stages of an etching process
  • Figure 8A shows examples of digital samples of a detector output signal being monitored, and Figure 8B shows the slope values calculated from the samples of Figure 81
  • Figure 9 illustrates very generally an apparatus for performing a dry etching process through plasma discharge;
  • Figures 10A and 10B show examples, respectively, of a declining signal level monitored in the plasma system of Figure 9, and its calculated slope;
  • Figures 11A and 11B show examples, respectively, of a increasing signal level monitored in the plasma system of Figure 9, and its calculated slope;
  • Figure 12 is a flow diagram that illustrates one signal processing method to obtain endpoint
  • Figure 13 is a flow diagram expanding upon one step of the method of the flow diagram of Figure 12, according to one embodiment.
  • Figure 14 is a flow diagram expanding upon the same step of the method of the flow diagram of Figure 12, according to an alternative embodiment. Description of the Preferred Embodiments
  • a liquid enclosure 11 contains in it a support 13 that is rotated through a shaft 15 by a motor 17 that is outside of the enclosure 11.
  • a semiconductor wafer 19 Positioned on the rotating support 13 is a semiconductor wafer 19 that is being processed.
  • the photoresist layer has already been applied to the wafer structure and exposed to a light pattern corresponding to the physical pattern desired to be left after development of the photoresist layer. It is this physical mask pattern that is subsequently used in a further step to etch or otherwise process the layer immediately beneath the photoresist layer.
  • the developer solution is generally applied to the photoresist layer by spaying, although other techniques can be used as well.
  • a nozzle 21 provides such a spray from a solution in a container 23 that is passed through an electrically controlled valve 25.
  • Various specific techniques of intermittent spray or continuous spray are used by different semiconductor manufacturers.
  • the valve 25 is turned off and then another electrically controlled valve is opened to deliver a rinsing solution from a container 29 to another nozzle 31.
  • the developer and rinse spraying usually occur while the wafer 19 is being spun with a uniform velocity.
  • An electronic process controller 33 controls the spinning motor 17, the valves 25 and 27 and other aspects of the processing equipment.
  • a source 35 of electro-magnetic radiation in the visible or near visible region directs a beam 37 against the developing photoresist layer on the Wafer 19.
  • a photodetector 39 is positioned to receive a reflection of the beam 37 from the wafer 19.
  • An electronic control system 41 drives the radiation source 35 and processes an electrical signal obtained from the photodetector 39 in a circuit 40. Since the detection of breakthrough is accomplished as a result of light interference, as explained hereinafter, some degree of coherency of the light source 35 is generally employed, a light emitting diode (LED) being satisfactory.
  • An output of the electronic system 41, in a circuit 43 indicates when breakthrough of the photoresist layer has been detected to occur. This signal is sometimes utilized to simply tell the operator w! n breakthrough occurred as a way of monitoring the process variations.
  • the breakthrough signal in the circuit 43 can be applied directly to the process controller 33 to terminate the development process at some specific time after breakthrough has been detected.
  • a tank 45 in which a boat 47 carrying a plurality of wafers, such as wafer 49, is submersed in a developer solution 51.
  • a unit 53 contains the light source and photodetector. A forward positioned wafer 49 is monitored during the development process. When the process end is determined or believed to have occurred, the boat 47 and its wafers is removed from the tank 45 and placed in a rinsing tank to terminate the development process.
  • An endpoint controller substantially the same as the controller 41 is also utilized with the unit 53
  • FIG. 3 A generalized block diagram of the controller 41 is shown in Figure 3. Connected to a system bus 55 are various components found in any general or special purpose computer. A microprocessor 57 is one of these components, as is a system dynamic random access memory ⁇
  • RAM random access memory
  • ROM read only memory
  • One input- output circuit 63 interfaces over a circuit 65 with a control and display panel, such as a cathode ray tube display and some form of keyboard input.
  • a second input-output circuit 67 receives the photodetector output analog signal in the circuit 40 and digitize it for processing by the controller system of Figure 3.
  • a third input-output circuit 69 provides a control signal output in circuit 43 to indicate that the endpoint has been reached, or to provide a calculated process end time.
  • a controlling software program for operating the controller of Figure 3, including determining when breakthrough occurs, is stored in its ROM 61 and executed by the microprocessor 57.
  • Such an endpoint controller and light source photodetector assembly is commercially available from the Xinix division of Luxtron Corporation, Santa Clara, California. Its Models 2200, 2300 and 2400 Wet Process Endpoint Controllers are widely used for this purpose. Breakthrough of the photoresist layer is currently determined in these instruments by a computer program including a window triggering algorithm.
  • the present invention is directed primarily to providing an alternate, improved technique of determining breakthrough.
  • the improved technique of the present invention may be implemented by loading software of the new technique into a Xinix Controller memory in place of the current window triggering algorithm.
  • Figure 4 shows an exemplary cross-sectional view of a semi ⁇ conductor structure 71 having a photoresist layer 73 coated on its top surface.
  • a ray 37' of the illuminating beam 37 ( Figure 1) is partially reflected by a top surface of the layer 73, as indicated by a ray 75'. Since the material of the layer 73 is substantially transparent, a portion of the incident ray 37' proceeds -through the layer 73 and is reflected from an interface 77 between that layer and the underlying structure, as indicated by a ray 79.
  • a photodetector positioned in the path of the rays 75 and 79 will detect an intensity level that is the result of interference between these two rays, provided that the incident light beam 37 is sufficiently monochromatic and coherent. That intensity is dependent upon the difference in pathlength travelled by the rays 75 and 79. As the layer 73 decreases in thickness, as occurs during a photoresist development process, the pathlength of the ray 75 changes, with the result that the intensity of the interfering beams as seen by the photodetector changes.
  • FIG. 5A An example of the output of the photodetector 35 (Figure 1) during such a process is given in Figure 5A.
  • the signal oscillations occur over time as the exposed regions of the photoresist layer 73 are developed and removed. Once there is a breakthrough through the layer 73, however, there is no further change in light pathlength imparted by further development, and the oscillations cea.se. Thus, at a point 89, where the oscillations of the photodetector output stop, it is inferred that a breakthrough has occurred.
  • the techniques of the present invention are applied to determining when such a breakthrough occurs. Since this specific process takes place in an environment where the electrical signal is quite noisy, however, the photodetector output signal is unfortunately not as pure as that illustrated in Figure 5A for simplicity in explanation.
  • FIG. 6A is a cross-sectional view similar to that of Figure 4 except to show when breakthrough first occurs in exposed regions of the photoresist layer 73 during the development process.
  • the reflected signal of Figure 5A is at point 89 when the breakthrough illustrated in Figure 6A first occurs.
  • Development is allowed to proceed for a further period, usually a fixed time after breakthrough is detected, and until the exposed photoresist regions are fully removed, as illustrated in Figure 6B.
  • a similar process also can occur during some wet etching operations.
  • a substrate structure 91 has over it a continuous layer of substantially transparent material 93, such as silicon oxide and the like, covered with a mask 95.
  • substantially transparent material 93 such as silicon oxide and the like
  • the breakthrough shown in Figure 7A is detectable by monitoring a signal similar to that of Figure 5A to determine when the oscillations in photodetector output signal end.
  • the etching is then allowed to proceed for a time after breakthrough is detected, until the regions under the vast openings are fully removed, as shown in Figure 7B.
  • the improved technique of the present invention which allows the detection of breakthrough from the photodetector output signal, is illustrated generally by the curve of Figure 5B.
  • the photodetector signal output is processed by the controller system of Figure 3 to obtain data of the curve of Figure 5B which is the mathematical derivative of the photodetector output signal of Figure 5A. Breakthrough is determined by use of only the derivative signal of Figure 5B, no direct use of the absolute signal values of Figure 5A being necessary.
  • a positive threshold level 97 is set. Once it is determined that the development process has begun, the derivative signal of Figure 5B is monitored to determine when it falls below the threshold 97 for a continuous period of time that is set to be longer than such signal levels may occur from noise in the signal or during the oscillations that occur. Such a fixed duration is shown to end at time 99 in Figure 5, at which point it is known that breakthrough occurred at time 89.
  • the signal processing technique being described can look for the breakthrough point.
  • One way to do this is to determine that the oscillations have begun, such as by determining that a peak or a valley in the derivative signal of Figure 5B has occurred.
  • Another way of determining that the process has begun is to simply note that the derivative signal of Figure 5B has exceeded the threshold 97 for a set period of time, thereby to avoid any false triggering due to noise and the like.
  • both it and a corresponding negative threshold 101 can also be utilized.
  • breakthrough is determined when the derivative signal of Figure 5B lies between the thresholds 97 and 101 for a specific period of time.
  • a start of the development process can be confirmed by noting when the derivative signal of Figure 5B exceeds either of the thresholds 97 or 101 for a predetermined period of time.
  • Figures 8A and 8B illustrate a preferred technique for calculating the derivative signal of Figure 5B from the photodetector analog output signal of Figure 5A.
  • the input-output circuit 67 Figure 2 digitizes the incoming photodetector analog signal in a circuit 40.
  • Figure 8A From these values are calculated individual values 111- 115 of a changing characteristic of the signal, namely its slope.
  • the points 111-115 of Figure 8B are points of the derivative signal previously discussed with respect to Figure 5B.
  • the slope value 111 of Figure 8B is determined from the slope of a model equation, in this case a line 117, that is fit to contiguous digital sample points 103, 104 and 105.
  • the next slope value 112 is calculated to be that of the same model equation, in this case another straight line 118, that is fit to the contiguous digital samples 104, 105 and 106.
  • the slope 113 is that of a line 119, the slope 114 that of a line 120 and the slope 115 that of a line 121.
  • the first slope value 111 is calculated from a first contiguous group of digital samples 103, 104 and 105.
  • the next slope value 112 is calculated from a group of digital samples that omits the first sample 103 but adds to the group the newest acquired sample 106.
  • a new slope value is calculated by fitting the curve to a combination of samples including the newly acquired one and those used during the immediately preceding slope calculation, except that the earliest digital sample is now deleted from the group. That is, each slope calculation is made from a predetermined number of contiguous digital samples that substitutes the most recently acquired sample for the oldest sample in the group.
  • etching is often done by a dry plasma process within a vacuum chamber 131.
  • a semiconductor wafer 133 is positioned within the chamber under a target structure 135.
  • the target 135 is energized by a direct current or radio frequency power supply 137, depending upon the specific process being implemented.
  • a supply 139 of inert and reactive gases are connected to selectively supply these gases to the interior of the chamber 131.
  • a plasma 141 is formed over the semiconductor wafer 133 from the breakup of gaseous molecules under the influence of strong electric fields. The result is that the wafer 133 is bombarded with ions that remove the top layer of material on the semiconductor wafer 133 or, if masked against such removal, only in the regions defined by the mask.
  • a photodetector 143 is shown in Figure 9 to be positioned immediately outside of the chamber 131 in the path of the plasma emissions that are viewable through the window 142.
  • the emission intensity of the plasma 141 in one or more selective narrow wavelength bands or lines is detected and an electrical signal output of the photodetector 143 is proportional to that intensity.
  • Detection of a limited emission wavelength band is generally accomplished by positioning a narrow bandpass interference or other type of filter in front of the photodetector 143 so that it receives only that band of wavelengths.
  • the wavelength band chosen to be monitored is one whose intensity varies in a manner related to the progress of the etching process being monitored.
  • Figure 10A illustrates one such narrow band signal that can be monitored. Breakthrough of the layer being etched is determined to occur at about time t B , where the rate of change of the signal flattens out considerably.
  • a plasma emission bandwidth can be monitored in certain circumstances where the intensity increases as an etching proceeds, an endpoint indicated at time t B where the increasing signal flattens out.
  • the preferred signal processing technique for determining when time t B occurs iri either of the decreasing or increasing signals of Figures 10 and 11, respectively, is the same as that previously described with respect to Figure 8. That is, the analog photodetector output signal of Figure 10A is digitized and processed point by point to obtain a derivative signal shown in Figure 10B. A negative slope threshold level 145 is set at an appropriate level. The processor first determines when the signal of Figure 10B exceeds the threshold 145 for a predetermined time, thus indicating that the etching process has begun. After the beginning of the process has been detected, the signal of Figure 10B is then monitored to determine when it falls below the threshold 145 for a time, indicating that breakthrough has occurred. Separate threshold levels may alternatively be utilized for detecting when the process has begun and when breakthrough has occurred.
  • a derivative signal shown in Figure 11B is obtained from the photodetector output signal of Figure 11A.
  • a threshold 147 is used with the derivative signal. The process is determined to have begun when the derivative signal of Figure 11B exceeds the threshold 147 for a time. Breakthrough is subsequently determined when the derivative signal falls below the threshold level 147.
  • a preferred digital signal processing technique is given for use in the endpoint controller of Figure 3 for determining breakthrough from any of the signals of Figures 5A, 10A or 10B. In each case, these analog signals are first digitized and their derivatives of respective Figures 5B, 10B and 11B determined by the process described with respect to Figure 8.
  • a first step 151 of the Figure 12 signal processing technique is to set various parameters and initialize one or more counters that are to be used.
  • One such parameter is denoted as "N", the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be utilized at one time for determining the individual slope points.
  • N the number of contiguous data points to be
  • a next step 153 acquires and stores N-l consecutive data points of the type illustrated in Figure 8A.
  • a step 155 After another data point is acquired as indicated by a step 155, there are enough data points for which a single slope value is calculated by the technique described with respect to Figure 8, indicated by a step 157. Several such calculated slope values are shown in Figure 8B.
  • a next step 159 determines whether or not the semiconductor process has begun. Of course, the criteria for a breakthrough will not be applied until it is determined for sure that the process has actually been started. Otherwise, breakthrough can be determined too early and the manufacturing process terminated before it has even begun. If the process has not been started, then further data values are used to calculate additional slope points.
  • a next step 161 compares the value of the most recently calculated slope value with a target end slope. If it is less than the target end slope, a slope end counter is incremented by one, as indicated in a step 163. This is one of the counters that was initialized in step 151 to have a beginning zero count.
  • a next step 165 compares the new count of the slope end counter with a target end count.
  • the target end count is another one of the parameters initially set in 151 and preferably made user selectable. This, in effect, sets the duration of time that the signal slope value must remain below its target value before breakthrough is determined to have occurred. This number is also set consistent with the amount of noise on the signal in a particular application. Thus, the target end slope acts as a not-to-exceed threshold value.
  • a process end time is then calculated by addition of an overprocessing period, and the process allowed to continue during such a further period, as indicated by a step 168. If the target count has not been reached by the most recent slope value that is below the target end slope, as determined by the step 165, then the processing returns to the step 155 by acquiring a new data point. If, as indicated by the step 161, the most recent slope value exceeds the target end slope, the slope end counter is reset to zero, as indicated by a step 169.
  • the technique of Figure 13 looks to whether the slope value exceeds a predetermined threshold and is applicable to analyzing any of the analog signals of Figures 5A, 10A and 11A.
  • a slope start counter is used in addition to the slope end counter of Figure 12. As indicated by a step 171, the count in the slope start counter is compared with a target start count, also user selectable. If the slope start counter has previously been incremented to exceed the target start count, then processing continues to the step 161 of Figure 12. If not, another step 173 ( Figure 13) occurs.
  • step 173 the most recent slope value calculated in step 157 of Figure 12 is compared with a threshold target start slope. If that slope value exceeds the threshold, the slope start counter is incremented by one, as indicated in a step 175. The processing then returns ( Figure 12) to step 155, followed by step 157 and then through step 159 on to the step 161. However, if the most recent slope value is less than the target start slope, the slope start counter is reset to zero, as indicated by a step 177, and then the processing of Figure 12 again returns to the steps 155 and 157.
  • an alternative signal processing technique may be advantageously employed.
  • a step 179 occurs after a new slope value has been calculated in a step 157 of Figure 12.
  • a determination is made as to whether a signal peak has occurred or not. If so, it is known that the semiconductor process has started and the signal processing goes to the next step 161 of Figure 12. But if it is determined that a peak has not been found, then a next step 181 of Figure 14 looks for a signal valley. If such a valley is found, then the next step is also 161 ( Figure 12) but, if not, then the signal processing returns to steps 155 and 157 of Figure 12.
  • the latest calculated slope value is used with a set number of immediately preceding slope values in order to determine whether a peak or a valley in the derivative signal has occurred.
  • a number P slope values are used. It is determined whether a certain number of consecutive slope values of that group initially were increasing, followed by consecutive number of substantially zero slope values, followed by yet another preset number decreasing in value.
  • the step 181 utilizes the most recently calculated slope value with a number V slope values to determine whether a valley exists. The valley exists if a first number of slope points is decreasing, followed by another number substantially zero, followed by another number of increasing slope samples.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

On détecte une phase prédéterminée d'un état changeant en contrôlant une modification d'un signal relatif à l'état changeant. Par exemple, l'existence d'une percée qui provient d'un développement avec photoréserve, d'une attaque chimique d'un matériau, et autre est détectée par contrôle optique d'une tranche à semi-conducteur, d'une carte de circuit imprimé et analogue, en cours de traitement. Une fin optimale du traitement peut ensuite être déterminée en réponse à une percée qui a été détectée, soit dans le but de contrôler le processus, soit afin de mettre fin automatiquement au traitement à cet instant prédéterminé. Dans ce traitement qui permet de déterminer l'existence d'une percée, on procède à la numérisation du signal optique et on effectue le calcul de valeurs de pentes individuelles à partir de groupes de valeurs consécutives de signaux numériques.
EP93914123A 1992-06-09 1993-05-24 Technique de detection de fin de traitement utilisant les determinations de la pente du signal Withdrawn EP0645008A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US89613792A 1992-06-09 1992-06-09
US896137 1992-06-09
PCT/US1993/004936 WO1993025893A1 (fr) 1992-06-09 1993-05-24 Technique de detection de fin de traitement utilisant les determinations de la pente du signal

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EP0645008A1 true EP0645008A1 (fr) 1995-03-29

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EP93914123A Withdrawn EP0645008A1 (fr) 1992-06-09 1993-05-24 Technique de detection de fin de traitement utilisant les determinations de la pente du signal

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EP (1) EP0645008A1 (fr)
JP (1) JP3375338B2 (fr)
KR (1) KR950702029A (fr)
TW (1) TW223176B (fr)
WO (1) WO1993025893A1 (fr)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN114112944A (zh) * 2022-01-25 2022-03-01 武汉精立电子技术有限公司 一种显示面板测量方法

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US5738756A (en) * 1995-06-30 1998-04-14 Lam Research Corporation Method and apparatus for detecting optimal endpoints in plasma etch processes
US6010538A (en) * 1996-01-11 2000-01-04 Luxtron Corporation In situ technique for monitoring and controlling a process of chemical-mechanical-polishing via a radiative communication link
US6028669A (en) * 1997-07-23 2000-02-22 Luxtron Corporation Signal processing for in situ monitoring of the formation or removal of a transparent layer
WO2000071971A1 (fr) 1999-05-24 2000-11-30 Luxtron Corporation Techniques optiques de mesure d'epaisseurs de couche
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers

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US4679938A (en) * 1985-06-03 1987-07-14 International Business Machines Corporation Defect detection in films on ceramic substrates
US5196285A (en) * 1990-05-18 1993-03-23 Xinix, Inc. Method for control of photoresist develop processes
US5160576A (en) * 1991-03-05 1992-11-03 Lam Research Corporation Method of end point detection in a plasma etching process

Non-Patent Citations (1)

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Title
See references of WO9325893A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114112944A (zh) * 2022-01-25 2022-03-01 武汉精立电子技术有限公司 一种显示面板测量方法

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JPH07507904A (ja) 1995-08-31
KR950702029A (ko) 1995-05-17
JP3375338B2 (ja) 2003-02-10
WO1993025893A1 (fr) 1993-12-23
TW223176B (fr) 1994-05-01

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