EP0612439A1 - High-voltage insulating disk - Google Patents

High-voltage insulating disk

Info

Publication number
EP0612439A1
EP0612439A1 EP92901976A EP92901976A EP0612439A1 EP 0612439 A1 EP0612439 A1 EP 0612439A1 EP 92901976 A EP92901976 A EP 92901976A EP 92901976 A EP92901976 A EP 92901976A EP 0612439 A1 EP0612439 A1 EP 0612439A1
Authority
EP
European Patent Office
Prior art keywords
insulating
insulating washer
cross
edge region
washer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP92901976A
Other languages
German (de)
French (fr)
Inventor
Wolfgang FÜHRER
Olaf Niermeyer
György PAPP
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0612439A1 publication Critical patent/EP0612439A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
    • H05K1/0256—Electrical insulation details, e.g. around high voltage areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B17/00—Insulators or insulating bodies characterised by their form
    • H01B17/56—Insulating bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09045—Locally raised area or protrusion of insulating substrate

Definitions

  • the invention relates to an insulating washer made of electrically insulating and heat-conducting material.
  • Insulating disks of this type are used for liquid cooling of an electrical component, in particular a semiconductor component, which is arranged in an electrically insulating and thermally conductive manner on a heat sink, in particular a cooling socket. This insulating disk is inserted between the cooling box and the semiconductor component. With such a thin insulating washer with plane-parallel surfaces, partial discharge begins early, sliding discharges form and the flashover resistance is low, which can hardly be increased by increasing the creepage distance.
  • An isolating cell is known from German utility model 86 14 173, which is used for the two-sided cooling of disk cell semiconductors.
  • This insulating cell has a disk shape and its dimensions are similar to the usual disk semiconductors.
  • the centerpiece is an electrically highly insulating, but good heat-conducting disc made of beryllium oxide (BeO) of about 3 mm thickness, which is flanked for good thermal contacting and for the protection of two metal plates made of good heat-conducting material, preferably copper.
  • BeO beryllium oxide
  • This arrangement is surrounded by an Epoxidharzu pressure and held together.
  • These metal plates also have a smaller diameter than the diameter of the beryllium oxide disk, which additionally taper in the direction of the support with the beryllium oxide disk.
  • Insulating material still known alumina (Al Og). Such an isolation cell is indeed highly insulating, very heat-conducting and insensitive to pressure, but is also designed to be very complex.
  • a cooling box for dissipating the heat loss from semiconductors is known from German Offenlegungsschrift 37 40 233, which contains an insulating plate made of inorganic insulating material when process water is used as the cooling liquid.
  • the cooling box consists of two shells with two sockets for supplying and removing the cooling liquid, cooling fins being arranged in the interior of these shells, and contact plates for receiving the heat given off by the semiconductor element and distributing it to the cooling liquid.
  • the insulating plate made of inorganic material is arranged between the contact plate and the shell.
  • the diameter of the insulating plate is larger than the diameter of the shell and the contact plate.
  • the cooling box is encased in plastic to increase the creepage distances.
  • Beryllium oxide (BeO) or aluminum oxide (Al O) are provided as inorganic materials.
  • the insulating plate has circular solderable metallizations on both sides, which are smaller than the outer diameter of the insulating plate and correspond to the diameter of the shell or the contact plate. This design of the cooling box allows cooling with normal water and there are no glow discharges which occur in the insulating disks described at the beginning (low glow voltage resistance).
  • German patent application 39 37 130 discloses a can cooling device for cooling electrical components, the cooling can being encased with a 1 mm to 3 mm thin insulating layer.
  • a 1 mm to 3 mm thin insulating layer which consists of casting and / or laminating resin from unsaturated polyester and / or epoxy resins (thermosetting plastic) and / or from modified polystyrene (thermoplastic).
  • the outside of the insulating layer is surrounded by an electrically conductive contact socket, for example a copper socket.
  • an electrically conductive contact socket for example a copper socket.
  • the invention is based on the object of specifying an insulating washer which no longer has the disadvantages mentioned. .
  • this object is achieved in that one side of this insulating washer is provided in the edge region with at least one circumferential rib and / or with at least one circumferential groove.
  • This surface design of an insulating pane ensures that the value of the breakdown voltage increases significantly while the value of the partial discharge remains the same.
  • the overturning strength of an arrangement consisting of two components which are separated from one another by means of this insulating disk can thus be substantially increased without increasing the diameter of this insulating disk.
  • this object is achieved in that one side of this insulating washer is provided in the center with a recess, the cross section of which is equal to a cross section of a component.
  • this insulating disk is provided with a circumferential groove, the walls of which are coated with a conductive coating, and in that this circumferential groove is arranged in such a way that a cross-sectional area enclosed by the outer edge of the groove is at least larger than the cross-sectional area of a support surface of a component.
  • a component for example a semiconductor or a cooling box
  • a component with higher dielectric strength inorganic Material, thermosetting plastic
  • the threshold voltage for the partial discharge rises.
  • this configuration of the insulating washer is particularly advantageous when two components are arranged (an electrical component and a cooling box), the cross sections of which are of different sizes.
  • the same advantages are achieved by means of the third insulating pane according to the invention, which is used in the case of an arrangement of a pane semiconductor and a cooling box with a disk-shaped cross-sectional area.
  • the side of the component facing the insulating pane can have any shape as long as it does not exceed the outer edge of the groove.
  • the depth or the thickness of the bottom of the recess can be changed until the dielectric strength given by the insulating material is reached at an edge of the recessed component. The thermal resistance of this insulating disk is thus minimized.
  • the edge region of this insulating pane must be so thick that the field strength around the recessed component in the insulating pane is reduced to a value which is compatible with the medium surrounding the insulating pane (air, oil, potting).
  • the insulating section of the recess is a gap larger than the cross-section of a lowerable building element and the sides tenican 'de this recess are conductively coated. This increases the partial discharge resistance.
  • the edge region is designed as a circumferential rib. This increase in the area of the creepage distance of the insulating washer significantly increases the value of the breakdown voltage.
  • the surface enclosed by the circumferential groove is conductive and is this conductive layer with the conductive 0 electrically connected layer of the groove.
  • Embodiment is prevented that the partial discharges can arise at the contact surfaces between the component and the insulating washer.
  • this groove can also be filled with conductive material.
  • the value of the breakdown voltage can be significantly improved by using ribs and grooves in the area of the creepage distance.
  • This value of the breakdown voltage can be increased by approximating the cross-sectional shape of the grooves and ribs of the first or second insulating washer to the so-called Rogowski profile.
  • Another advantage of the first and the second insulating washer in one of the above-mentioned embodiments of the surface is that the size of the insulating washer is reduced without influencing the flashover resistance.
  • Figure 1 illustrates a cross section of a first insulating washer according to the invention
  • Figure 2 shows a cross section of a second insulating washer according to the invention
  • FIG. 3 shows an advantageous embodiment of the insulating disk according to FIG. 2
  • FIG. 4 shows a cross section of a third insulating disk according to the invention
  • FIGS. 5 to 8 each show advantageous embodiments of the insulating disk according to FIG. 4.
  • FIG. 1 shows a cross section through a first insulating disk 2 according to the invention, arranged between two components 4 and 6.
  • This insulating washer 2 is made of electrically insulating and heat-conducting material.
  • Inorganic ceramics for example beryllium oxide (BeO), aluminum oxide (AlpOg), aluminum nitrite (A1N), silicon nitrite (SiN), thermoplastic materials, for example polystyrene, PA, PTFE, thermosetting plastics, for example glass fiber reinforced epoxy resins, can be used as the material. be used. These materials can also be combined as desired using joining processes.
  • Semiconductors, in particular power semiconductors, and cooling sockets are provided as components 4 and 6.
  • One side 8 of this insulating disk 2 is provided with a circumferential rib 26 which is arranged in the edge region 16 of this insulating disk 2. Instead of this one circumferential rib 26, a circumferential groove 24 can also be provided.
  • this insulating disk 2 in the edge region 16 in such a way that a plurality of circumferential ribs 26 and / or a plurality of circumferential grooves 24 are provided.
  • the alternative suggestions of this first insulating pane 2 according to the invention are not shown in more detail for reasons of clarity.
  • FIG. 2 shows a cross section through a second insulating disk 2 according to the invention, which is likewise arranged between two components 4 and 6.
  • the material of this second insulating washer 2 does not differ from the first insulating washer 2 according to FIG. 1. The difference lies in the surface design of the insulating washer 2.
  • the component 4 which can be a semiconductor or a cooling box
  • the cross section of the recess 10 is equal to the cross section of the component 4 to be countersunk.
  • FIG. 3 shows a detail of an advantageous embodiment of the insulating disk 2 according to FIG. 2.
  • the cross section of the recess 10 is larger by a gap dimension d than the cross section of the component 4 and the walls 12 and the bottom 13 of the recess 10 are coated with a conductive layer 14.
  • the edge region 16 of the insulating disk 2 is designed as a circumferential rib 18 in such a way that this circumferential rib 18 simultaneously determines the dimensions of the recess 10.
  • the thickness d of the edge area 16 can also decrease towards the outside, the contour of this edge area 16 resulting from the stress division on the surface 8 of the edge area 16.
  • the thickness d of the edge region 16 or the thickness d 2 of the circumferential rib 18 must be so great that the edge field strength around the component 4 in the insulating disk 2 is applied to a medium, usually air, oil, potting, for the surrounding medium. compatible value (2 ... 3 kV / mm for air) is reduced.
  • the thickness d 1 of the bottom 13 of the recess 10 can be reduced in such a way until the dielectric strength given by the insulating material is reached at the edge of the recessed component 4. As a result, the thermal resistance of the insulating pane 2 has also been minimized.
  • FIG. 4 shows a cross section through a third insulating disk 2 according to the invention, arranged between two components 4 and 6. In terms of material, this insulating disk 2 does not differ from the first insulating disk 2 according to FIG. 1. The difference lies in the surface design of the insulating disk 2.
  • One side 8 of this insulating disk 2 is provided with a circumferential groove 20, the walls of which have a conductive layer 14 are provided. Instead of this conductive layer 14, the circumferential groove 20 can also be filled with conductive material.
  • FIG. 5 shows an advantageous embodiment of the third insulating disk 2 according to the invention according to FIG. 4.
  • the surface of the side 8 of the insulating disk 2 that is touched by the component 4 is coated with a conductive layer 22.
  • This conductive layer 22 is electrically conductively connected to the conductive layer 14 of the circumferential groove 20. This additional conductive layer 22 prevents partial discharges on the contact surfaces of the component 4 and the insulating disk 2.
  • the thickness distribution of the third insulating washer 2 according to FIG. 4 is as follows: In the area below the component 4, ie the area enclosed by the circumferential groove, the insulating washer 2 has a thickness d 2 as the insulating washer 2 2 at the edge region 16.
  • the thickness d of the insulating disk 2 below the groove .20 can have the same value as the thickness d of the bottom 13 of the recess 10 of the second insulating disk 2.
  • the third insulating disk 2 designed in this way is preferably used for components 4 and 6 which have a disk-shaped cross-sectional area.
  • the insulating disk 2 can be lapped to achieve certain values of parallelism and flatness of the surface, without the values for partial discharge. y adversely affect voltage voltage and breakdown voltage.
  • the circumferential groove 20 is to be positioned around the component 4 such that a cross-sectional area enclosed by the outer edge of the groove 20 is at least larger than the cross-sectional area of a contact surface of the component 4 (FIGS. 4 and 4) 5).
  • the insulating pane 2 may be facing side of the device 4 of any shape ( Figure 6), as long as it does not exceed the outer periphery of the 'groove 20th
  • FIGS. 7 and 8 each show a further advantageous embodiment of the third insulating disk 2 according to FIG. 4.
  • the edge region 16 is provided with at least one further circumferential groove 24 (FIG. 7) and with at least one circumferential rib 26 (FIG 8) provided.
  • the insulating disk 2 is provided with a plurality of ribs 26 and / or a plurality of circumferential grooves 24 in the area 16 of the creepage distances, the value of the breakdown voltage can advantageously be increased. An effective value of the breakdown voltage of 10 kV / 60 sec is thereby achieved.
  • the shape of the ribs 18 and 26 and the groove 24 can be any. In order to be able to fully utilize the insulating washer 2, the cross-sectional areas must be approximated
  • Another advantage of the insulating washer 2 in the surface embodiment according to FIG. 1 or FIG. 3 is that the pane size is reduced without influencing the rollover strength.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Insulating Bodies (AREA)

Abstract

Disque isolant (2) réalisé dans un matériau électriquement isolant et thermoconducteur. Selon l'invention, un côté (8) de ce disque isolant (2) comporte un creux (10) en son milieu, dont la section transversale est identique à celle d'un composant (4, 6). Ainsi, la valeur de la tension d'extinction de la décharge partielle et la décharge glissante ainsi que la résistance au contournement peuvent être sensiblement augmentées, grâce à une configuration de la superficie de ce disque isolant (2).Insulating disc (2) made of an electrically insulating and thermally conductive material. According to the invention, one side (8) of this insulating disc (2) has a hollow (10) in its middle, the cross section of which is identical to that of a component (4, 6). Thus, the value of the extinguishing voltage of the partial discharge and the sliding discharge as well as the resistance to flashover can be significantly increased, thanks to a configuration of the surface area of this insulating disc (2).

Description

Hochspannungs-Isol ierscheibeHigh voltage insulating washer
Die Erfindung bezieht sich auf eine Isolierscheibe aus elek¬ trisch isolierendem und wärmeleitendem Material.The invention relates to an insulating washer made of electrically insulating and heat-conducting material.
Derartige Isolierscheiben werden bei einer Flüssigkeitsküh- lung eines elektrischen Bauelements, insbesondere eines Halb¬ leiter-Bauelements, das elektrisch isolierend und thermisch leitend an einen Kühlkörper, insbesondere eine Kühldose, an- geordnet ist, verwendet. Dabei wird diese Isolierscheibe zwi¬ schen Kühldose und Halbleiter-Bauelement eingebracht. Bei ei¬ ner derartigen dünnen Isolierscheibe mit planparallelen Flä¬ chen setzt eine Teilentladung früh ein, bilden sich Gleitent¬ ladungen aus und ist die Überschlagsfestigkeit niedrig, die durch Erhöhung der Kriechstrecke kaum gesteigert werden kann.Insulating disks of this type are used for liquid cooling of an electrical component, in particular a semiconductor component, which is arranged in an electrically insulating and thermally conductive manner on a heat sink, in particular a cooling socket. This insulating disk is inserted between the cooling box and the semiconductor component. With such a thin insulating washer with plane-parallel surfaces, partial discharge begins early, sliding discharges form and the flashover resistance is low, which can hardly be increased by increasing the creepage distance.
Aus dem deutschen Gebrauchsmuster 86 14 173 ist eine Isolier¬ zelle bekannt, die zur zweiseitigen Kühlung von Scheibenzel¬ len-Halbleitern verwendet wird. Diese Isolierzelle hat eine Scheibenform und gleicht äußerlich in ihren Abmessungen den üblichen Scheiben-Halbleitern. Kernstück ist eine elektrisch hoch isolierende, aber gut wärmeleitende Scheibe aus Beryl¬ liumoxid (BeO) von ca. 3 mm Dicke, die für eine gute Thermo- kontaktierung und zum Schutz von zwei Metallplatten aus gut wärmeleitendem Material, vorzugsweise Kupfer, flankiert wird. Diese Anordnung ist mit einer Epoxidharzu pressung umgeben und zusammengehalten. Diese Metallplatten weisen außerdem einen kleineren Durchmesser als der Durchmesser der Berylli¬ umoxid-Scheibe auf, die sich zusätzlich in Richtung Auflage mit der Berylliumoxid-Scheibe verjüngen. Außerdem ist alsAn isolating cell is known from German utility model 86 14 173, which is used for the two-sided cooling of disk cell semiconductors. This insulating cell has a disk shape and its dimensions are similar to the usual disk semiconductors. The centerpiece is an electrically highly insulating, but good heat-conducting disc made of beryllium oxide (BeO) of about 3 mm thickness, which is flanked for good thermal contacting and for the protection of two metal plates made of good heat-conducting material, preferably copper. This arrangement is surrounded by an Epoxidharzu pressure and held together. These metal plates also have a smaller diameter than the diameter of the beryllium oxide disk, which additionally taper in the direction of the support with the beryllium oxide disk. In addition, as
Isoliermaterial noch Aluminiumoxid (Al Og) bekannt. Eine der¬ artige Isolierzelle ist zwar hoch isolierend, sehr wärmelei¬ tend und druckunempfindlich, jedoch auch sehr aufwendig kon¬ zipiert. Aus der deutschen Offenlegungsschrift 37 40 233 ist eine Kühl¬ dose zum Abführen der Verlustwärme von Halbleitern bekannt, die bei Verwendung von Brauchwasser als Kühlflüssigkeit eine Isolierplatte aus anorganischen Isoliermaterial enthält. Die Kühldose besteht aus zwei Schalen mit zwei Stutzen zum Zu- und Abführen der Kühlflüssigkeit, wobei im Inneren dieser Schalen Kühlrippen angeordnet sind, und Kontaktplatten zur Aufnahme der von dem Halbleiterelement abgegebenen Wärme und deren Verteilung an die Kühlflüssigkeit. Die Isolierplatte aus anorganischem Material ist zwischen der Kontaktplatte und der Schale angeordnet. Der Durchmesser der Isolierplatte ist größer als der Durchmesser der Schale und der Kontaktplatte. Zur Erhöhung der Kriechwege ist bis auf die Kontaktfläche und der hydraulischen Anschlüsse die Kühldose mit Kunststoff um- mantelt. Als anorganische Materialien sind Berylliumoxid (BeO) oder Aluminiumoxid (Al O ) vorgesehen. Außerdem weist die Iso¬ lierplatte beidseitig kreisförmige lötbare Metallisierungen auf, die kleiner sind als der Außendurchmesser der Isolier¬ platte und dem Durchmesser der Schale bzw. der Kontaktplatte entspricht. Durch diese Ausgestaltung der Kühldose kann mit normalem Wasser gekühlt werden und es treten keine Glimment¬ ladungen auf, die bei eingangs beschriebenen Isolierscheiben auftreten (geringe Gli mspannungsfestigkeit) .Insulating material still known alumina (Al Og). Such an isolation cell is indeed highly insulating, very heat-conducting and insensitive to pressure, but is also designed to be very complex. A cooling box for dissipating the heat loss from semiconductors is known from German Offenlegungsschrift 37 40 233, which contains an insulating plate made of inorganic insulating material when process water is used as the cooling liquid. The cooling box consists of two shells with two sockets for supplying and removing the cooling liquid, cooling fins being arranged in the interior of these shells, and contact plates for receiving the heat given off by the semiconductor element and distributing it to the cooling liquid. The insulating plate made of inorganic material is arranged between the contact plate and the shell. The diameter of the insulating plate is larger than the diameter of the shell and the contact plate. Apart from the contact surface and the hydraulic connections, the cooling box is encased in plastic to increase the creepage distances. Beryllium oxide (BeO) or aluminum oxide (Al O) are provided as inorganic materials. In addition, the insulating plate has circular solderable metallizations on both sides, which are smaller than the outer diameter of the insulating plate and correspond to the diameter of the shell or the contact plate. This design of the cooling box allows cooling with normal water and there are no glow discharges which occur in the insulating disks described at the beginning (low glow voltage resistance).
Bei der deutschen Offenlegungsschrift 39 37 130 ist eine Do¬ senkühlvorrichtung zur Kühlung von elektrischen Bauelementen bekannt, wobei die Kühldose mit einer 1 mm bis 3 mm dünnen Isolierschicht ummantelt ist. Die aus Verguß- und/oder Lami- nierharz aus ungesättigten Polyester- und/oder Epoxidharzen (duroplastischer Kunststoff) und/oder aus modifiziertem Poly¬ styrol (thermoplastischer Kunststoff) besteht. Die Isolier¬ schicht ist außen von einer elektrisch gut leitenden Kontakt¬ dose, beispielsweise Kupferdose, umgeben. Durch diese Ausge¬ staltung der Dosenkühlvorrichtung kann normales Wasser als Kühlflüssigkeit verwendet werden und die kompakte Bauweise erlaubt einen einfachen und schnellen Austausch. Die Kontakt- dose verbindet die beiden Kontaktflächen elektrisch, was im Einzelfall nachteilig ist.German patent application 39 37 130 discloses a can cooling device for cooling electrical components, the cooling can being encased with a 1 mm to 3 mm thin insulating layer. Which consists of casting and / or laminating resin from unsaturated polyester and / or epoxy resins (thermosetting plastic) and / or from modified polystyrene (thermoplastic). The outside of the insulating layer is surrounded by an electrically conductive contact socket, for example a copper socket. With this configuration of the can cooling device, normal water can be used as the cooling liquid and the compact design allows simple and quick replacement. The contact can connects the two contact surfaces electrically, which is disadvantageous in individual cases.
Der Erfindung liegt nun die Aufgabe zugrunde, eine Isolier- Scheibe anzugeben, die nicht mehr die ausgeführten Nachteile besitzt. .The invention is based on the object of specifying an insulating washer which no longer has the disadvantages mentioned. .
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß eine Seite dieser Isolierscheibe im Randbereich mit wenigstens einer umlaufenden Rippe und/oder mit wenigstens einer umlau¬ fenden Nut versehen ist. Durch diese Oberflächengestaltung einer Isolierscheibe wird erreicht, daß bei gleichbleibendem Wert der Teilentladung sich der Wert der Überschlagsspannung wesentlich erhöht. Somit kann die Überschlagsfestigkeit einer Anordnung, bestehend aus zwei Bauelementen, die mittels die¬ ser Isolierscheibe voneinander getrennt sind, wesentlich er¬ höht werden, ohne dabei den Durchmesser dieser Isolierscheibe zu vergrößern. Außerdem wird diese Aufgabe erfindungsgemäß dadurch gelöst, daß eine Seite dieser Isolierscheibe mittig mit einer Ausnehmung versehen ist, deren Querschnitt gleich einem Querschnitt eines Bauelements ist. Ferner wird die Auf¬ gabe erfindungsgemäß dadurch gelöst, daß eine Seite dieser Isolierscheibe mit einer umlaufenden Nut versehen ist, deren Wände leitend beschichtet sind und daß diese u laufene Nut derart angeordnet ist, daß eine vom Außenrand der Nut um¬ schlossene Querschnittsfläche wenigstens größer ist als die Querschnittsfläche einer Auflagefläche eines Bauelementes.This object is achieved in that one side of this insulating washer is provided in the edge region with at least one circumferential rib and / or with at least one circumferential groove. This surface design of an insulating pane ensures that the value of the breakdown voltage increases significantly while the value of the partial discharge remains the same. The overturning strength of an arrangement consisting of two components which are separated from one another by means of this insulating disk can thus be substantially increased without increasing the diameter of this insulating disk. In addition, this object is achieved in that one side of this insulating washer is provided in the center with a recess, the cross section of which is equal to a cross section of a component. Furthermore, the object is achieved according to the invention in that one side of this insulating disk is provided with a circumferential groove, the walls of which are coated with a conductive coating, and in that this circumferential groove is arranged in such a way that a cross-sectional area enclosed by the outer edge of the groove is at least larger than the cross-sectional area of a support surface of a component.
Durch die Anbringung einer Ausnehmung auf einer Seite der Isolierscheibe wird erreicht, daß ein Bauelement, beispiels¬ weise ein Halbleiter oder eine Kühldose, in die dünne Isolier¬ scheibe eingesenkt werden kann, wodurch hohe Randfeldstärken am Bauelement in einem Material höherer Durchschlagsfestig¬ keit (anorganisches Material, duroplastischer Kunststoff) auf- tritt. Dadurch steigt die Einsetzspannung für die Teilentla¬ dung. Außerdem ist diese Ausgestaltung der Isolierscheibe be¬ sonders vorteilhaft bei einer Anordnung zweier Bauelemente (eines elektrischen Bauelementes und einer Kühldose), deren Querschnitte unterschiedlich groß sind.By making a recess on one side of the insulating pane, it is achieved that a component, for example a semiconductor or a cooling box, can be sunk into the thin insulating pane, as a result of which high edge field strengths on the component in a material with higher dielectric strength (inorganic Material, thermosetting plastic) occurs. As a result, the threshold voltage for the partial discharge rises. In addition, this configuration of the insulating washer is particularly advantageous when two components are arranged (an electrical component and a cooling box), the cross sections of which are of different sizes.
Dieselben Vorteile werden mittels der dritten erfindungsge- mäßen Isolierscheibe erreicht, die bei einer Anordnung eines Scheiben-Halbleiters und einer Kühldose mit scheibenförmiger Querschnittsfläche verwendet wird. Dabei kann die der Isolier¬ scheibe zugewandte Seite des Bauelementes beliebig geformt sein, solange sie den Außenrand der Nut nicht überschreitet.The same advantages are achieved by means of the third insulating pane according to the invention, which is used in the case of an arrangement of a pane semiconductor and a cooling box with a disk-shaped cross-sectional area. The side of the component facing the insulating pane can have any shape as long as it does not exceed the outer edge of the groove.
Bei der Isolierscheibe mit der Ausnehmung kann .die Tiefe bzw. die Dicke des Bodens der Ausnehmung soweit verändert werden, bis die vom Isoliermaterial gegebene Durchschlagsfestigkeit an einer Kante ά&s eingesenkten Bauelementes erreicht ist. Damit wird der Wärmewiderstand dieser Isolierscheibe mini¬ miert.In the case of the insulating washer with the recess, the depth or the thickness of the bottom of the recess can be changed until the dielectric strength given by the insulating material is reached at an edge of the recessed component. The thermal resistance of this insulating disk is thus minimized.
Der Randbereich dieser Isolierscheibe muß so dick sein, daß die Randfeldstärke um das eingesenkte Bauelement in der Iso- Iierscheibe auf einen für das der Isolierscheibe umgebende Medium (Luft, öl, Verguß) verträglichen Wert abgebaut wird.The edge region of this insulating pane must be so thick that the field strength around the recessed component in the insulating pane is reduced to a value which is compatible with the medium surrounding the insulating pane (air, oil, potting).
Bei einer vorteilhaften Ausführungsform der Isolierscheibe ist der Querschnitt der Ausnehmung um ein Spaltmaß größer als der Querschnitt eines senkbaren Bauelementes und sind die Sei- tenwän'de dieser Ausnehmung leitfähig beschichtet. Dadurch wird die Teilentladungsfestigkeit erhöht.In an advantageous embodiment of the insulating section of the recess is a gap larger than the cross-section of a lowerable building element and the sides tenwän 'de this recess are conductively coated. This increases the partial discharge resistance.
Bei einer weiteren vorteilhaften Ausführungsform der Isolier- Scheibe ist der Randbereich als umlaufende Rippe ausgebildet. Durch diese Erhöhung im Bereich der Kriechstrecke der Isolier¬ scheibe wird der Wert der Überschlagsspannung wesentlich er¬ höht.In a further advantageous embodiment of the insulating washer, the edge region is designed as a circumferential rib. This increase in the area of the creepage distance of the insulating washer significantly increases the value of the breakdown voltage.
Bei einer vorteilhaften Ausführungsform der zweiten Isolier¬ scheibe ist die von der umlaufenden Nut umschlossene Fläche leitfähig und ist diese leitfähige Schicht mit der leitfähi- 0 gen Schicht der Nut elektrisch leitend verbunden. Durch dieseIn an advantageous embodiment of the second insulating pane, the surface enclosed by the circumferential groove is conductive and is this conductive layer with the conductive 0 electrically connected layer of the groove. Through this
Ausgestaltung wird verhindert, daß die Teilentladungen an den Berührungsflächen zwischen Bauelement und Isolierscheibe ent¬ stehen können. Anstelle der leitfähigen Schicht der umlaufen- den Nut kann diese Nut auch mit leitendem Material gefüllt sein.Embodiment is prevented that the partial discharges can arise at the contact surfaces between the component and the insulating washer. Instead of the conductive layer of the circumferential groove, this groove can also be filled with conductive material.
Auch bei dieser zweiten Isolierscheibe kann durch Verwendung von Rippen und Nuten im Bereich der Kriechstrecke der Wert der Überschlagsspannung wesentlich verbessert werden.With this second insulating washer, the value of the breakdown voltage can be significantly improved by using ribs and grooves in the area of the creepage distance.
Dieser Wert der Überschlagsspannung kann durch Annäherung der Querschnittsform der Nuten und Rippen der ersten oder zweiten Isolierscheibe an das sogenannte Rogowski-Profil gesteigert werden.This value of the breakdown voltage can be increased by approximating the cross-sectional shape of the grooves and ribs of the first or second insulating washer to the so-called Rogowski profile.
Ein weiterer Vorteil der ersten und der zweiten Isolierschei¬ be in einer der genannten Ausführungsformen der Oberfläche ist, daß sich die Größe der Isolierscheibe verringert, ohne dabei Einfluß auf die Überschlagsfestigkeit zu nehmen.Another advantage of the first and the second insulating washer in one of the above-mentioned embodiments of the surface is that the size of the insulating washer is reduced without influencing the flashover resistance.
Zur weiteren Erläuterung der Erfindung wird auf die Zeichnung Bezug genommen, in der mehrere Ausführungsformen einer ersten, zweiten und dritten Isolierscheibe schematisch dargestellt sind.To further explain the invention, reference is made to the drawing, in which several embodiments of a first, second and third insulating washer are shown schematically.
Figur 1 veranschaulicht einen Querschnitt einer ersten erfin¬ dungsgemäßen Isolierscheibe, dieFigure 1 illustrates a cross section of a first insulating washer according to the invention, the
Figur 2 zeigt einen Querschnitt einer zweiten erfindungsge ä- ßen Isolierscheibe, dieFigure 2 shows a cross section of a second insulating washer according to the invention
Figur 3 zeigt eine vorteilhafte Ausgestaltung der Isolier¬ scheibe nach Figur 2, in Figur 4 ist ein Querschnitt einer dritten erfindungsgemäßen Isolierscheibe darge¬ stellt und in den Figuren 5 bis 8 sind jeweils vorteilhafte Ausgestaltungen der Isolierscheibe nach Figur 4 dargestellt. In der Figur 1 ist ein Querschnitt durch eine erste erfin¬ dungsgemäße Isolierscheibe 2, angeordnet zwischen zwei Bau¬ elemente 4 und 6, dargestellt. Diese Isolierscheibe 2 ist aus elektrisch isolierendem und wärmeleitendem Material. Als Mate- rial kann anorganische Keramik, beispielsweise Berylliumoxid (BeO), Aluminiumoxid (AlpOg), Aluminiumnitrit (A1N), Silizium¬ nitrit (SiN), thermoplastische Kunststoffe, beispielsweise Polystyrol, PA, PTFE, duroplastische Kunststoffe, beispiels¬ weise glasfaserverstärkte Epoxidharze, verwendet werden. Diese Materialien können auch beliebig mittels fügende Verfahren kombiniert werden. Als Bauelemente 4 und 6 sind Halbleiter, insbesondere Leistungshalbleiter, und Kühldosen vorgesehen. Eine Seite 8 dieser Isolierscheibe 2 ist mit einer umlaufenden Rippe 26 versehen, die im Randbereich 16 dieser Isolierscheibe 2 angeordnet ist. Anstelle dieser einen umlaufenden Rippe 26 kann auch eine umlaufende Nut 24 vorgesehen sein. Es ist je¬ doch auch möglich, die Seite 8 dieser Isolierscheibe 2 im Randbereich 16 derart zu gestalten, daß mehrere umlaufende Rippen 26 und/oder mehrere umlaufende Nuten 24 vorgesehen sind. Die Alternativvorschläge dieser ersten erfindungsgemä¬ ßen Isolierscheibe 2 sind aus Gründen der Übersichtlichkeit nicht näher dargestellt.FIG. 3 shows an advantageous embodiment of the insulating disk according to FIG. 2, FIG. 4 shows a cross section of a third insulating disk according to the invention, and FIGS. 5 to 8 each show advantageous embodiments of the insulating disk according to FIG. 4. FIG. 1 shows a cross section through a first insulating disk 2 according to the invention, arranged between two components 4 and 6. This insulating washer 2 is made of electrically insulating and heat-conducting material. Inorganic ceramics, for example beryllium oxide (BeO), aluminum oxide (AlpOg), aluminum nitrite (A1N), silicon nitrite (SiN), thermoplastic materials, for example polystyrene, PA, PTFE, thermosetting plastics, for example glass fiber reinforced epoxy resins, can be used as the material. be used. These materials can also be combined as desired using joining processes. Semiconductors, in particular power semiconductors, and cooling sockets are provided as components 4 and 6. One side 8 of this insulating disk 2 is provided with a circumferential rib 26 which is arranged in the edge region 16 of this insulating disk 2. Instead of this one circumferential rib 26, a circumferential groove 24 can also be provided. However, it is also possible to design the side 8 of this insulating disk 2 in the edge region 16 in such a way that a plurality of circumferential ribs 26 and / or a plurality of circumferential grooves 24 are provided. The alternative suggestions of this first insulating pane 2 according to the invention are not shown in more detail for reasons of clarity.
In der Figur 2 ist ein Querschnitt .durch eine zweite erfin- dungsgemäße Isolierscheibe 2 dargestellt, die ebenfalls zwi¬ schen zwei Bauelementen 4 und 6 angeordnet ist. Vom Material her unterscheidet sich diese zweite Isolierscheibe 2 nicht von der ersten Isolierscheibe 2 nach Figur 1. Der Unterschied besteht in der Oberflächengestaltung der Isolierscheibe 2. Zur Einsenkung des Bauelementes 4, das ein Halbleiter oder eine Kühldose sein kann, ist eine Seite 8 der Isolierscheibe 2 mit einer Ausnehmung 10 versehen. Dabei ist der Querschnitt der Ausnehmung 10 gleich dem Querschnitt des einzusenkenden Bauelementes 4. Durch Einsenken des Bauelementes 4 in die dünne Isolierscheibe 2 wird erreicht, daß die hohe Randfeld¬ stärke am Bauelement 4 in einem Material höherer Durchschlags¬ festigkeit (Isolierscheibe 2) auftritt, wodurch die Einsetz- Spannung für Teilentladung gesteigert werden konnte. Durch diese einfache Ausgestaltung einer Oberfläche 8 der Isolier¬ scheibe 2 konnte als Teilentladungsspannung ein Effektivwert von 3 kV (Minimum) erzielt werden.2 shows a cross section through a second insulating disk 2 according to the invention, which is likewise arranged between two components 4 and 6. The material of this second insulating washer 2 does not differ from the first insulating washer 2 according to FIG. 1. The difference lies in the surface design of the insulating washer 2. To countersink the component 4, which can be a semiconductor or a cooling box, there is a side 8 of the insulating washer 2 provided with a recess 10. The cross section of the recess 10 is equal to the cross section of the component 4 to be countersunk. By sinking the component 4 into the thin insulating pane 2 it is achieved that the high edge field strength on the component 4 occurs in a material having a higher dielectric strength (insulating pane 2). whereby the insertion Partial discharge voltage could be increased. This simple design of a surface 8 of the insulating pane 2 made it possible to achieve an effective value of 3 kV (minimum) as the partial discharge voltage.
In Figur 3 ist ein Ausschnitt einer vorteilhaften Ausführungs¬ form der Isolierscheibe 2 nach Figur 2 näher dargestellt. Bei dieser vorteilhaften Ausführungsform ist der Querschnitt der Ausnehmung 10 um ein Spaltmaß d größer als der Querschnitt des Bauelements 4 und die Wände 12 und der Boden 13 der Aus¬ nehmung 10 sind mit einer leitfähigen Schicht 14 beschichtet. Außerdem ist bei dieser Ausführungsform der Randbereich 16 der Isolierscheibe 2 derart als umlaufende Rippe 18 ausgebil¬ det, daß diese umlaufende Rippe 18 gleichzeitig die Abmessun- gen der Ausnehmung 10 bestimmt. Die Dicke d des Randbereichs 16 kann auch nach außen abnehmen, wobei die Kontur dieses Randbereichs 16 aus der Spannungsteilung auf der Oberfläche 8 des Randbereichs 16 sich ergibt. Die Dicke d des Randbereichs 16 bzw. die Dicke d2 der umlaufenden Rippe 18 muß so groß sein, daß die Randfeldstärke um das Bauelement 4 in der Iso¬ lierscheibe 2 auf einen für das umgebende Medium, üblicher¬ weise Luft, Öl, Verguß, verträglichen Wert ( 2...3 kV/mm bei Luft) abgebaut wird. Die Dicke d, des Bodens 13 der Ausneh¬ mung 10 kann derart verringert werden, bis die vom Isolier- aterial gegebene Durchschlagsfestigkeit an der Kante des eingesenkten Bauelementes 4 erreicht ist. Dadurch ist außer¬ dem der Wärmewiderstand der Isolierscheibe 2 minimiert worden.FIG. 3 shows a detail of an advantageous embodiment of the insulating disk 2 according to FIG. 2. In this advantageous embodiment, the cross section of the recess 10 is larger by a gap dimension d than the cross section of the component 4 and the walls 12 and the bottom 13 of the recess 10 are coated with a conductive layer 14. In addition, in this embodiment, the edge region 16 of the insulating disk 2 is designed as a circumferential rib 18 in such a way that this circumferential rib 18 simultaneously determines the dimensions of the recess 10. The thickness d of the edge area 16 can also decrease towards the outside, the contour of this edge area 16 resulting from the stress division on the surface 8 of the edge area 16. The thickness d of the edge region 16 or the thickness d 2 of the circumferential rib 18 must be so great that the edge field strength around the component 4 in the insulating disk 2 is applied to a medium, usually air, oil, potting, for the surrounding medium. compatible value (2 ... 3 kV / mm for air) is reduced. The thickness d 1 of the bottom 13 of the recess 10 can be reduced in such a way until the dielectric strength given by the insulating material is reached at the edge of the recessed component 4. As a result, the thermal resistance of the insulating pane 2 has also been minimized.
Durch diese Oberflächenmaßnahmen bei einer Isolierscheibe 2 wird erreicht, daß eine minimale geforderte Teilentladungs¬ spannung von 3 kV (Effektivwert) erreicht wird. Diese ober¬ flächengestaltete Isolierscheibe 2 kann besonders bei Bauele¬ menten 4 und 6 verwendet werden, deren Querschnittsflächen unterschiedlich groß sind. In Figur 4 ist ein Querschnitt durch eine dritte erfindungs¬ gemäße Isolierscheibe 2, angeordnet zwischen zwei Bauelemen¬ ten 4 und 6, dargestellt. Vom Material her unterscheidet sich diese Isolierscheibe 2 nicht von der ersten Isolierscheibe 2 nach Figur 1. Der Unterschied besteht in der Oberflächenge¬ staltung der Isolierscheibe 2. Eine Seite 8 dieser Isolier¬ scheibe 2 ist mit einer umlaufenden Nut 20 versehen, deren Wände mit einer leitfähigen Schicht 14 versehen sind. Anstel¬ le dieser leitfähigen Schicht 14 kann die umlaufende Nut 20 auch mit leitfähigem Material gefüllt sein.These surface measures in the case of an insulating pane 2 ensure that a minimum required partial discharge voltage of 3 kV (effective value) is achieved. This surface-shaped insulating disk 2 can be used in particular in the case of components 4 and 6, the cross-sectional areas of which differ in size. FIG. 4 shows a cross section through a third insulating disk 2 according to the invention, arranged between two components 4 and 6. In terms of material, this insulating disk 2 does not differ from the first insulating disk 2 according to FIG. 1. The difference lies in the surface design of the insulating disk 2. One side 8 of this insulating disk 2 is provided with a circumferential groove 20, the walls of which have a conductive layer 14 are provided. Instead of this conductive layer 14, the circumferential groove 20 can also be filled with conductive material.
Die Figur 5 zeigt eine vorteilhafte Ausgestaltung der dritten erfindungsgemäßen Isolierscheibe 2 nach Figur 4. Bei dieser vorteilhaften Ausgestaltung ist die Oberfläche der Seite 8 der Isolierscheibe 2, die vom Bauelement 4 berührt wird, mit einer leitfähigen Schicht 22 beschichtet. Diese leitfähige Schicht 22 ist elektrisch leitend verbunden mit der leitfähi¬ gen Schicht 14 der umlaufenden Nut 20. Durch diese zusätz¬ liche leitfähige Schicht 22 werden Teilentladungen an den Be- rührflächen des Bauelements 4 und der Isolierscheibe 2 verhin¬ dert.FIG. 5 shows an advantageous embodiment of the third insulating disk 2 according to the invention according to FIG. 4. In this advantageous embodiment, the surface of the side 8 of the insulating disk 2 that is touched by the component 4 is coated with a conductive layer 22. This conductive layer 22 is electrically conductively connected to the conductive layer 14 of the circumferential groove 20. This additional conductive layer 22 prevents partial discharges on the contact surfaces of the component 4 and the insulating disk 2.
Gegenüber der Ausführungsform der zweiten Isolierscheibe 2 ist die Dickenverteilung der dritten Isolierscheibe 2 gemäß Figur 4 folgendermaßen: Im Bereich unterhalb des Bauelements 4, d.h. der von der umlaufenden Nut umschlossene Bereich, weist die Isolierscheibe 2 eine Dicke d2 auf, wie sie die Isolierscheibe 2 nach Figur 2 am Randbereich 16 aufweist. Die Dicke d, der Isolierscheibe 2 unterhalb der Nut .20 kann den¬ selben Wert annehmen, wie die Dicke d, des Bodens 13 der Aus¬ nehmung 10 der zweiten Isolierscheibe 2.Compared to the embodiment of the second insulating washer 2, the thickness distribution of the third insulating washer 2 according to FIG. 4 is as follows: In the area below the component 4, ie the area enclosed by the circumferential groove, the insulating washer 2 has a thickness d 2 as the insulating washer 2 2 at the edge region 16. The thickness d of the insulating disk 2 below the groove .20 can have the same value as the thickness d of the bottom 13 of the recess 10 of the second insulating disk 2.
Die so gestaltete dritte Isolierscheibe 2 wird bevorzugt bei Bauelementen 4 und 6, die eine scheibenförmige Qurschnitts- fläche aufweist, eingesetzt. Außerdem kann die Isolierscheibe 2 zur Erzielung bestimmter Werte von Parallelität und Ebenheit der Oberfläche geläppt werden, ohne die Werte für Teilentla- y dungsspannung und Überschlagsspannung ungünstig zu beeinflus¬ sen.The third insulating disk 2 designed in this way is preferably used for components 4 and 6 which have a disk-shaped cross-sectional area. In addition, the insulating disk 2 can be lapped to achieve certain values of parallelism and flatness of the surface, without the values for partial discharge. y adversely affect voltage voltage and breakdown voltage.
Bei der Oberflächenbeschaffenheit der dritten Isolierscheibe 2 ist die umlaufende Nut 20 derart um das Bauelement 4 zu le¬ gen, daß eine vom Außenrand der Nut 20 umschlossene Quer¬ schnittsfläche wenigstens größer ist als die Querschnittsflä¬ che einer Auflagefläche des Bauelements 4 (Figur 4 und 5). Außerdem kann die der Isolierscheibe 2 zugewandte Seite des Bauelements 4 beliebig geformt sein (Figur 6), solange sie den Außenrand der'Nut 20 nicht überschreitet.In the surface condition of the third insulating disk 2, the circumferential groove 20 is to be positioned around the component 4 such that a cross-sectional area enclosed by the outer edge of the groove 20 is at least larger than the cross-sectional area of a contact surface of the component 4 (FIGS. 4 and 4) 5). In addition, the insulating pane 2 may be facing side of the device 4 of any shape (Figure 6), as long as it does not exceed the outer periphery of the 'groove 20th
Die Figuren 7 und 8 zeigen jeweils eine weitere vorteilhafte Ausführungsform der dritten Isolierscheibe 2 nach Figur 4. Bei diesen Ausführungsformen ist der Randbereich 16 mit wenig¬ stens einer weiteren umlaufenden Nut 24 (Figur 7) und mit we¬ nigstens einer umlaufenden Rippe 26 (Figur 8) versehen. Da¬ durch, daß die Isolierscheibe 2 im Bereich 16 der Kriech¬ strecken mit mehreren Rippen 26 und/oder mehreren umlaufenden Nuten 24 versehen ist, kann der Wert der Überschlagsspannung vorteilhaft gesteigert werden. Es wird ein Effektivwert der Überschlagsspannung von 10 kV/60 sek dadurch erreicht. Die Form der Rippen 18 und 26 und der Nut 24 kann beliebig sein. Um die Isolierscheibe 2 elektrisch vollständig ausnutzen zu können, ist eine Annäherung der Querschnittsflächen dieserFIGS. 7 and 8 each show a further advantageous embodiment of the third insulating disk 2 according to FIG. 4. In these embodiments, the edge region 16 is provided with at least one further circumferential groove 24 (FIG. 7) and with at least one circumferential rib 26 (FIG 8) provided. Because the insulating disk 2 is provided with a plurality of ribs 26 and / or a plurality of circumferential grooves 24 in the area 16 of the creepage distances, the value of the breakdown voltage can advantageously be increased. An effective value of the breakdown voltage of 10 kV / 60 sec is thereby achieved. The shape of the ribs 18 and 26 and the groove 24 can be any. In order to be able to fully utilize the insulating washer 2, the cross-sectional areas must be approximated
Rippen 18 und 26 und dieser Nut 24 an das sogenannte Rogowski- Profil empfehlenswert.Ribs 18 and 26 and this groove 24 on the so-called Rogowski profile is recommended.
Ein weiterer Vorteil der Isolierscheibe 2 in der Oberflächen- ausführungsform nach Figur 1 oder Figur 3 ist der, daß sich, die Scheibengröße verringert, ohne die Überschlagsfestigkeit zu beeinflussen. Another advantage of the insulating washer 2 in the surface embodiment according to FIG. 1 or FIG. 3 is that the pane size is reduced without influencing the rollover strength.

Claims

Patentansprüche Claims
1. Isolierscheibe (2) aus elektrisch isolierendem und wärme- leitendem Material, d a d u r c h g e k e n n z e i c h - n et , daß eine Seite (8) dieser Isolierscheibe (2) im Rand¬ bereich (16) mit wenigstens einer umlaufenden Rippe (26) und/ oder mit wenigstens einer umlaufenden Nut (24) versehen ist.1. Insulating washer (2) made of electrically insulating and heat-conducting material, characterized in that one side (8) of this insulating washer (2) in the edge region (16) with at least one peripheral rib (26) and / or with at least one circumferential groove (24) is provided.
2. Isolierscheibe (2) aus elektrisch isolierendem und wärme¬ leitendem Material, d a d u r c h g e k e n n z e i c h ¬ n e t , daß eine Seite (8) dieser Isolierscheibe (2) mittig mit einer Ausnehmung (10) versehen ist, deren Querschnitt gleich einem Querschnitt eines Bauelementes (4,6) ist.2. Insulating washer (2) made of electrically insulating and thermally conductive material, characterized in that one side (8) of this insulating washer (2) is provided in the center with a recess (10), the cross section of which is equal to a cross section of a component (4, 6) is.
3. Isolierscheibe (2) nach Anspruch 2, d a d u r c h g e k e n n z e i c h n e t , daß der Querschnitt der Aus¬ nehmung (10) um ein Spaltmaß (d ) größer ist als der Quer¬ schnitt des Bauelementes (4) und die Flächen (12,13) dieser Ausnehmung (10) leitfähig beschichtet sind.3. Insulating washer (2) according to claim 2, characterized in that the cross section of the recess (10) is larger by a gap dimension (d) than the cross section of the component (4) and the surfaces (12, 13) of this recess (10) are coated with a conductive coating.
4. Isolierscheibe (2) nach Anspruch 2 oder 3, d a d u r c h g e k e n n z e i c h n e t , daß die Dicke seines Randbe¬ reichs (16) nach außen abnimmt, wobei sich die Kontur dieses Randbereichs (16) aus der Spannungsteilung auf der Oberfläche des Randbereichs (16) ergibt.4. Insulating washer (2) according to claim 2 or 3, so that the thickness of its edge region (16) decreases towards the outside, the contour of this edge region (16) resulting from the voltage division on the surface of the edge region (16).
5. Isolierscheibe (2) nach Anspruch 2 oder 3, d a d u r c h g e k e n n z e i c h n e t , daß ein Randbereich (16) als umlaufende Rippe (18) ausgestaltet ist.5. insulating washer (2) according to claim 2 or 3, d a d u r c h g e k e n n z e i c h n e t that an edge region (16) is designed as a circumferential rib (18).
6. Isolierscheibe (2) aus elektrisch isolierendem und wärme¬ leitendem Material, d a d u r c h g e k e n n z e i c h ¬ n e t , daß eine Seite (8) dieser Isolierscheibe (2) mit einer umlaufenden Nut (20) versehen ist, deren Wände leitend • beschichtet sind und daß diese umlaufende Nut (20) derart angeordnet ist, daß eine vom Außenrand der Nut (20) umschlos¬ sene Querschnittsfläche wenigstens größer ist als die Quer¬ schnittsfläche einer Auflagefläche eines Bauelementes (4).6. Insulating washer (2) made of electrically insulating and thermally conductive material, characterized in that one side (8) of this insulating washer (2) is provided with a circumferential groove (20), the walls of which are conductive • are coated and that this circumferential groove (20) is arranged such that a cross-sectional area enclosed by the outer edge of the groove (20) is at least larger than the cross-sectional area of a support surface of a component (4).
7. Isolierscheibe (2) nach Anspruch 6, d a d u r c h g e k e n n z e i c h n e t , daß die von der umlaufenden Nut (20) umschlossene Fläche leitfähig beschichtet ist und daß diese leitfähige Schicht (22) mit der leitfähigen Schicht (14) der Nut (20) elektrisch leitend verbunden ist.7. Insulating washer (2) according to claim 6, characterized in that the surface surrounded by the circumferential groove (20) is conductively coated and that this conductive layer (22) with the conductive layer (14) of the groove (20) is electrically conductively connected .
8. Isolierscheibe (2) nach einem der Ansprüche 2,3,6 oder 7 d a d u r c h g e k e n n z e i c h n e t , daß ein Rand¬ bereich (16) dieser Isolierscheibe (2) mit wenigstens einer umlaufenden Nut (24) versehen ist.8. Insulating washer (2) according to one of claims 2, 3, 6 or 7 d a d u r c h g e k e n n z e i c h n e t that an edge region (16) of this insulating washer (2) is provided with at least one circumferential groove (24).
9. Isolierscheibe (2) nach einem der Ansprüche 2,3,6 oder 7, d a d u r c h g e k e n n z e i c h n e t , daß ein Rand¬ bereich (16) dieser Isolierscheibe (2) mit wenigstens einer umlaufenden Rippe (26) versehen ist.9. Insulating washer (2) according to one of claims 2, 3, 6 or 7, d a d u r c h g e k e n z e i c h n e t that an edge region (16) of this insulating washer (2) is provided with at least one peripheral rib (26).
10. Isolierscheibe (2) nach Anspruch 8 und 9, d a d u r c h g e k e n n z e i c h n e t , daß ein Randbereich (16) die¬ ser Isolierscheibe (2) mit wenigstens einer umlaufenden Nut (24) und umlaufenden Rippe (26) versehen ist.10. Insulating washer (2) according to claim 8 and 9, d a d u r c h g e k e n n z e i c h n e t that an edge region (16) of this insulating washer (2) is provided with at least one circumferential groove (24) and circumferential rib (26).
11. Isolierscheibe (2) nach einem der Ansprüche 1,5,6,8 oder 9, d a d u r c h g e k e n n z e i c h n e t , daß ein Querschnittsprofil der umlaufenden Rippen (18,26) und der um- laufenden Nuten (24) annähernd gleich einem Rogowski-Profil ist. 11. Insulating washer (2) according to one of claims 1, 5, 6, 8 or 9, so that a cross-sectional profile of the circumferential ribs (18, 26) and the circumferential grooves (24) is approximately the same as a Rogowski profile.
EP92901976A 1991-11-15 1991-12-13 High-voltage insulating disk Ceased EP0612439A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE9114268U 1991-11-15
DE9114268U DE9114268U1 (en) 1991-11-15 1991-11-15 High-voltage insulating disc
PCT/DE1991/000973 WO1993010560A1 (en) 1991-11-15 1991-12-13 High-voltage insulating disk

Publications (1)

Publication Number Publication Date
EP0612439A1 true EP0612439A1 (en) 1994-08-31

Family

ID=6873342

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92901976A Ceased EP0612439A1 (en) 1991-11-15 1991-12-13 High-voltage insulating disk

Country Status (6)

Country Link
US (1) US5576578A (en)
EP (1) EP0612439A1 (en)
JP (2) JPH07501179A (en)
CA (1) CA2123574A1 (en)
DE (1) DE9114268U1 (en)
WO (1) WO1993010560A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4237763C2 (en) * 1992-11-09 1996-01-25 Siemens Ag Device for the isolated fastening of heat-generating semiconductor components
US5344794A (en) * 1993-03-31 1994-09-06 Siemens Components, Inc. Method of making a semiconductor chip
TW408453B (en) * 1997-12-08 2000-10-11 Toshiba Kk Package for semiconductor power device and method for assembling the same
AUPQ679100A0 (en) * 2000-04-07 2000-05-11 Novapharm Research (Australia) Pty Ltd Process and composition for cleaning medical instruments
DE60132397T2 (en) 2000-06-01 2009-01-22 Matsushita Electric Industrial Co., Ltd., Kadoma-shi Method for producing a thermally conductive substrate with lead frame and heat radiation plate
ATE458392T1 (en) * 2005-12-13 2010-03-15 B2 Electronic Gmbh ARRANGEMENT WITH AT LEAST ONE ELECTRONIC COMPONENT
CN105934095B (en) * 2016-06-28 2019-02-05 Oppo广东移动通信有限公司 Pcb board and mobile terminal with it
US11112555B2 (en) 2019-09-30 2021-09-07 Nichia Corporation Light-emitting module with a plurality of light guide plates and a gap therein
US11561338B2 (en) 2019-09-30 2023-01-24 Nichia Corporation Light-emitting module

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE343717B (en) * 1968-04-01 1972-03-13 Asea Ab
US3662086A (en) * 1970-05-25 1972-05-09 Nat Beryllia Corp Semiconductor package
US3874546A (en) * 1973-10-11 1975-04-01 Pinckney Molded Plastic Inc Convertible container-pallet
CH601917A5 (en) * 1976-10-27 1978-07-14 Bbc Brown Boveri & Cie
CH630490A5 (en) * 1978-06-30 1982-06-15 Bbc Brown Boveri & Cie HOUSING FOR A SEMICONDUCTOR HIGH-PERFORMANCE COMPONENT.
JPS5969951A (en) * 1982-10-14 1984-04-20 Toshiba Corp Sealing method for package
JPS6151947A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Semiconductor device
JPS629649A (en) * 1985-07-08 1987-01-17 Nec Corp Package for semiconductor
DE8614173U1 (en) * 1986-05-24 1989-08-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Device for two-sided potential-free cooling of disc cell semiconductors
JPH077810B2 (en) * 1986-06-06 1995-01-30 株式会社日立製作所 Semiconductor device
EP0311674B1 (en) * 1987-04-24 1990-12-27 Unisys Corporation Cavity-up-cavity-down multichip integrated circuit package
JPS6432654A (en) * 1987-07-29 1989-02-02 Hitachi Chemical Co Ltd Substrate for loading semiconductor element
JPS6442135A (en) * 1987-08-07 1989-02-14 Mitsubishi Electric Corp Semiconductor device
DE3740233A1 (en) * 1987-11-27 1989-06-08 Asea Brown Boveri Cooling box for conducting away the waste heat from semiconductors
GB2233821A (en) * 1989-07-11 1991-01-16 Oxley Dev Co Ltd Ceramic package including a semiconductor chip
US5067008A (en) * 1989-08-11 1991-11-19 Hitachi Maxell, Ltd. Ic package and ic card incorporating the same thereinto
DE3937130A1 (en) * 1989-11-08 1990-05-31 Asea Brown Boveri Box-type cooler - for power semiconductor modules insulated by layer of specified plastic material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9310560A1 *

Also Published As

Publication number Publication date
WO1993010560A1 (en) 1993-05-27
CA2123574A1 (en) 1993-05-27
US5576578A (en) 1996-11-19
DE9114268U1 (en) 1992-01-09
JPH07501179A (en) 1995-02-02
JPH08500003U (en) 1996-07-02

Similar Documents

Publication Publication Date Title
DE3314996C2 (en)
EP1932407B1 (en) Electrical module
WO1996026560A1 (en) Diode laser component with cooling element and diode laser module
EP2481124B1 (en) Insulating device and method for producing an insulating device
DE2712543A1 (en) SEMICONDUCTOR DEVICE IMMEDIATED IN RESIN AND METHOD FOR MANUFACTURING IT
DE4227063A1 (en) High-performance semiconductor component that can be switched off
EP0612439A1 (en) High-voltage insulating disk
EP3475978A1 (en) Thermally conductive insulator
DE4017749A1 (en) Low flow resistance liq. cooling body - esp. for cooling semiconductor device includes electrically insulating, thermal conductive material with cooling channels etc.
EP1274110A1 (en) Fuse
WO1993006605A1 (en) Liquid-cooled heavy-duty resistor
DE3740233C2 (en)
DE19506091A1 (en) Cooling element in form of multiple substrate
DE10303103B4 (en) Semiconductor component, in particular power semiconductor component
DE102004035810A1 (en) Capacitor module for an electronic component comprises capacitors arranged in a housing
DE102016103676A1 (en) The power semiconductor module
EP1107310A2 (en) Isolation improvement of high power semiconductor modules
EP3459110B1 (en) Cooling box unit and power electronics device having a cooling box unit
DE19523074A1 (en) Support insulator
DE2940571A1 (en) Double power semiconductor pressure contact elements - has thyristor stage formed by semiconductor disc sandwiched between contact discs
DE4105786A1 (en) Liquid cooled electrical resistance - has track formed on housing that is box shaped and has liquid circulated through it
WO2022073884A1 (en) Semiconductor assembly and method for producing a semiconductor assembly
DE102022101744A1 (en) Temperature control device with an aluminum heat sink and a heating element, power electronic device and motor vehicle
EP0053812A2 (en) Thyristor stack
DE102021003748A1 (en) Arrangement for cooling a high-voltage component

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19940422

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT CH DE ES FR GB IT LI SE

17Q First examination report despatched

Effective date: 19950711

APAB Appeal dossier modified

Free format text: ORIGINAL CODE: EPIDOS NOAPE

APAD Appeal reference recorded

Free format text: ORIGINAL CODE: EPIDOS REFNE

APAD Appeal reference recorded

Free format text: ORIGINAL CODE: EPIDOS REFNE

APAB Appeal dossier modified

Free format text: ORIGINAL CODE: EPIDOS NOAPE

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20020315

APAF Appeal reference modified

Free format text: ORIGINAL CODE: EPIDOSCREFNE