EP0600003B1 - Method for temperature-compensating zener diodes having either positive or negative temperature coefficients - Google Patents

Method for temperature-compensating zener diodes having either positive or negative temperature coefficients Download PDF

Info

Publication number
EP0600003B1
EP0600003B1 EP92918698A EP92918698A EP0600003B1 EP 0600003 B1 EP0600003 B1 EP 0600003B1 EP 92918698 A EP92918698 A EP 92918698A EP 92918698 A EP92918698 A EP 92918698A EP 0600003 B1 EP0600003 B1 EP 0600003B1
Authority
EP
European Patent Office
Prior art keywords
voltage
temperature
segment
zener
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP92918698A
Other languages
German (de)
French (fr)
Other versions
EP0600003A4 (en
EP0600003A1 (en
Inventor
Adrian Paul Brokaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices Inc
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Publication of EP0600003A1 publication Critical patent/EP0600003A1/en
Publication of EP0600003A4 publication Critical patent/EP0600003A4/en
Application granted granted Critical
Publication of EP0600003B1 publication Critical patent/EP0600003B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/463Sources providing an output which depends on temperature
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes

Definitions

  • This invention relates to temperature-compensated Zener-diode voltage references. More particularly, this invention relates to a so-called "auto-TC" voltage reference wherein trimming of a circuit resistance to give a predetermined output voltage will simultaneously optimize the temperature compensation for that output voltage.
  • EP-A-0 220 789 shows a Zener-diode circuit for use with CMOS processes where parasitic bipolar transistors are produced as part of the CMOS process. Such bipolar-transistors are formed in such a fashion that the circuit designer cannot make independent connections to their collector. Thus, a special circuit arrangement is required.
  • the object of the present invention is to provide a temperature-compensated Zener-diode voltage reference and a corresponding method which automatically produces zero TC at the output voltage.
  • the present invention in one preferred embodiment provides an auto-TC voltage reference wherein an operational amplifier receives at one input the voltage of a Zener diode and at its other input receives a compensation signal from a feedback circuit comprising a transistor and resistor network. When one of the resistors of the network is trimmed to give a nominal output voltage for the reference, the TC of the reference voltage will have been reduced to zero, or nearly so.
  • the circuitry is capable of compensating Zener diodes of either positive or negative TC.
  • the graph of Figure 1 depicts in an idealized manner the temperature response characteristics of the avalanche voltage (V z ) versus temperature of a group of Zener diodes produced by the same process.
  • the slopes of upper and lower solid lines 10 and 12 illustrate extremes of positive and negative temperature coefficients (TC) respectively. Any one diode made by the process can have a TC which lies anywhere between these extremes. It will be assumed in the following discussion that the temperature response characteristic is linear, which is approximately correct as a practical matter.
  • T m is shown as being negative on the absolute or Kelvin scale, which is generally true in practice. Although such a negative T m is not a realizable operating point, it is useful for analysis as an extrapolation of Zener behavior in a normal operating temperature range.
  • This circuit includes an operational amplifier 20 having its non-inverting input terminal 22 connected to the positive electrode of a Zener diode 24 producing a voltage V z .
  • the other Zener electrode is connected to a common line 26.
  • the Zener voltage generally is temperature sensitive, as discussed above with reference to Figure 1.
  • the output terminal 28 of the amplifier 20 produces an output voltage V o responsive to the applied Zener voltage.
  • a negative feedback circuit generally indicated at 30 is connected between the output terminal 28 and the common line 26.
  • This feedback circuit 30 includes a number of series-connected elements comprising a first segment 32 with a resistor R1 and diode D1, a second segment 34 with a resistor R2 and a diode D2, and a resistor R3.
  • the junction point 36 between the two segments 32, 34 is connected to the inverting input terminal 38 of the amplifier 20.
  • the Zener diode 24 has a zero TC (rare, but possible)
  • the output V o will be temperature invariant.
  • the V BE of a diode has a negative TC, the current in the feedback circuit nevertheless will vary with temperature.
  • R3 now is made greater than zero (R3 > 0)
  • the output V o will increase due to the added voltage drop across R3 resulting from the feedback current.
  • This added increment to the output voltage will have a positive TC (since the feedback current will in the circumstances noted above have a positive TC).
  • the positive TC of the voltage across R3 can compensate for the negative TC of the Zener voltage V z , so that the output V o can be made (essentially) invariant with temperature.
  • the initial value of R2 can be set significantly less than R1 (R2 ⁇ R1), and R2 can be thought of as R2 "nominal" in series with an initially negative R3 of relatively large value.
  • the circuit without any trimming should be capable of compensating for a limiting (maximum) positive TC in the Zener 24. Since the actual Zener normally will have a less positive TC than this limiting value, R2 can be trimmed up (increased in ohmic value) until the correct magnitude is reached to provide compensation for the actual Zener involved (including Zeners with negative TC).
  • Zener TC The range of Zener TC which can be compensated is constrained by the relationship between the diode V BE and the magnitude of the Zener voltage V z which determines the maximum TC of the current in R1 and R2. To increase this range, more diodes can be added to both feedback segments 32, 34.
  • V BE voltage multiplier
  • the feedback voltage for input terminal 38 is tapped off an intermediate point 36A between R4 and R5.
  • the V BE of one transistor can be "multiplied" to provide effective junction drops in both feedback segments 32A and 34A.
  • the V BE is effectively multiplied by ( 1 + (R4 + R5)/R6 ), and this multiplied voltage is divided between the lower and upper segments in proportions determined by the resistance values.
  • V o can be made a convenient value higher than V m .
  • the nominal value of V o to which the output will be trimmed must be higher than the maximum anticipated Zener voltage by an amount which allows for the temperature compensation voltage.
  • trimming to increase the output TC will increase the output voltage V o .
  • trimming to decrease the output TC (by making R2 ⁇ kR1) will lower the output voltage V o .
  • the direction of voltage change is correct for providing an auto-TC compensation. To achieve that result, it is necessary to establish correct proportions between the output voltage adjustment (change in V o ), and the induced TC.
  • the output voltage V o changed only about 4 millivolts peak-to-peak, in a convex curve centered roughly about 6 volts, with the output lower than 6V at both ends of the curve.
  • a V o of 6 volts at room temperature was obtained when R2 was trimmed to 4.56K.
  • the output changed by only about 5mV peak-to-peak over the same 180° temperature sweep, in a curve which was inverted relative to the positive TC Zener curve.
  • R1 can be chosen to give any nominal current through the feedback network at a given temperature. Since V c has a TC proportional to its value, the TC of the current can be adjusted by adjusting V C . Thus it is possible to independently choose the current and the TC of the current, over some range. This is what makes it possible to find a single value of R3 which compensates both the TC of V o to zero (or nearly so) and simultaneously sets the output voltage at (1 + k)V m .
  • V c the voltage at which the Zener has a voltage V m and zero TC. In this case, it will not be necessary to adjust R3 away from zero, the feedback ratio will be (1 + k) at all temperatures, and both V x and V o will equal (1 + k)V m .
  • V o should be at (1 + k)V m at any temperature, including T m .
  • R3 is not zero, the ratio of the resistive parts of the feedback would not be (1 + k), although the voltage source component ratio always is.
  • V BE has a negative TC and its voltage extrapolates to go through the bandgap voltage (approximately 1.2V) at 0°K.
  • V c to be a multiple of V BE makes it possible to develop such a voltage which extrapolates to V m at T m .
  • Using k times this multiple of V BE as the voltage source in the upper segment 34B of the feedback completes the compensation so that trimming R3 to bring V o to (1 + k)V m should also cause the TC of V o to be zero.
  • the magnitude of V c is set by the values of the resistors in the feedback network.
  • the total voltage across all three feedback resistors R4, R5 and R6 similarly will be 6V, since that is the selected output voltage.
  • R5 +R6 R4 4.52 6 - 4.52 ⁇ 3.04 It will be seen that the V BE multiplier should produce a total of about 4 V BE s, with one V BE across R6, about two V BE s across R5, and about one V BE across R4.
  • V o V x + V 3
  • V c is not a battery, but something constructed of forward-biased diode drops. Therefore, it must have some bias current to operate which implies that the voltage across R1 must be positive for all operating temperatures and bias conditions.
  • T-T m will always be positive, since T m is often less than 0° Kelvin. Therefore the constraint that ( ⁇ 1 - ⁇ 2 ) (T-T m ) > 0 requires that ⁇ 1 - ⁇ 2 > 0 or ⁇ 1 > ⁇ 2 . Since it is desired to accommodate a range of ⁇ 1 which may be positive or negative, ⁇ 2 must be made more negative than the most negative value of ⁇ 1 . That is, the TC of the compensating voltage must be more negative than the most negative Zener TC expected from the process.
  • the largest component of this expression is the second term which is linear in T.
  • the third term usually reduces the effect of the fourth term, although the circuit described here does not force a strictly PTAT collector current as is often done in bandgap circuits.
  • FIG. 5 presents a detailed circuit diagram of a voltage reference in accordance with this invention and suitable for adaptation to IC format.
  • a dashed-line box 20 indicates the operational amplifier, as shown in the somewhat simplified diagrams previously discussed.
  • the feedback circuit 30A is of the V BE -multiplier type described with reference to Figure 3.
  • a start-up circuit 46 is provided in the usual way.
  • Figure 6 presents a modified form of feedback circuit 30C for the voltage reference of Figure 5, to reduce errors due to base current in the V BE multiplier transistor Q4.
  • a pair of diode-connected transistors Q10 and Q11 have been connected in series with the transistor Q4 to produce the required integral number of V BE s, with the fractional part for the lower feedback segment being supplied by the V BE multiplier across R5.
  • an additional transistor-connected diode Q5 has been inserted between R4 and R2 with the fractional part of V BE for the upper segment appearing across R4.
  • the voltage between the network junction point 36C and the top of R1 will be about 3-1/3 V BE s.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

    BACKGROUND OF THE INVENTION 1. Field of the Invention
  • This invention relates to temperature-compensated Zener-diode voltage references. More particularly, this invention relates to a so-called "auto-TC" voltage reference wherein trimming of a circuit resistance to give a predetermined output voltage will simultaneously optimize the temperature compensation for that output voltage.
  • 2. Description of the Prior Art
  • One type of "auto-TC" voltage reference has been described in U.S. Patent 4,313,083. There a Zener diode voltage is applied to one input terminal of an operational amplifier and the other input terminal is supplied with a feedback voltage from a junction point in a series circuit comprising a pair of transistors with a pair of trimmable resistors. The bases of the two transistors are separately set to predetermined values by a three-resistor voltage divider between the output line and ground. The circuit disclosed can provide auto-TC compensation for Zener diodes having positive TC, but not for diodes having negative TC.
  • EP-A-0 220 789 shows a Zener-diode circuit for use with CMOS processes where parasitic bipolar transistors are produced as part of the CMOS process. Such bipolar-transistors are formed in such a fashion that the circuit designer cannot make independent connections to their collector. Thus, a special circuit arrangement is required.
  • The object of the present invention is to provide a temperature-compensated Zener-diode voltage reference and a corresponding method which automatically produces zero TC at the output voltage.
  • This object is achieved with the features of claims 1 and 9, respectively.
  • SUMMARY OF THE INVENTION
  • The present invention in one preferred embodiment provides an auto-TC voltage reference wherein an operational amplifier receives at one input the voltage of a Zener diode and at its other input receives a compensation signal from a feedback circuit comprising a transistor and resistor network. When one of the resistors of the network is trimmed to give a nominal output voltage for the reference, the TC of the reference voltage will have been reduced to zero, or nearly so. The circuitry is capable of compensating Zener diodes of either positive or negative TC.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIGURE 1 is a graph showing the temperature-response characteristics of Zener diodes made by the same process;
  • FIGURE 2 is a schematic to illustrate the functioning of a voltage reference in accordance with the invention;
  • FIGURE 3 shows a modified circuit based on Figure 2 but utilizing only a single transistor in the feedback network;
  • FIGURE 4 presents a generalized schematic diagram to illustrate further aspects of the invention;
  • FIGURE 5 is a circuit diagram showing a circuit design suitable for an integrated circuit; and
  • FIGURE 6 is a circuit diagram showing a modification to the circuit of Figure 5.
  • DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
  • The graph of Figure 1 depicts in an idealized manner the temperature response characteristics of the avalanche voltage (Vz) versus temperature of a group of Zener diodes produced by the same process. The slopes of upper and lower solid lines 10 and 12 illustrate extremes of positive and negative temperature coefficients (TC) respectively. Any one diode made by the process can have a TC which lies anywhere between these extremes. It will be assumed in the following discussion that the temperature response characteristic is linear, which is approximately correct as a practical matter.
  • With Zener diodes made by the same process, it will be found that the temperature-response characteristic lines for all diodes will (at least approximately) pass through the same voltage point Vm at a temperature of Tm, as shown in Figure 1. Tm is shown as being negative on the absolute or Kelvin scale, which is generally true in practice. Although such a negative Tm is not a realizable operating point, it is useful for analysis as an extrapolation of Zener behavior in a normal operating temperature range.
  • It will be seen from Figure 1 that the avalanche voltage of the Zener diodes can be described by: Vz = Vm + α1 (T - Tm) where:
  • Vz
    is the avalanche voltage,
    Vm
    is a voltage parameter which is relatively insensitive to variations in a given process (and typically is in the range of 4.4V to 4.8V for a number of known processes),
    Tm
    is a temperature parameter which is relatively insensitive to variations in a given process, and
    α1
    is a parameter with a value associated with each fabricated device. Its variability from unit to unit encompasses most of the avalanche voltage variations which result from process variability.
  • Referring now to Figure 2, there is shown a circuit for illustrating aspects of the present invention. This circuit includes an operational amplifier 20 having its non-inverting input terminal 22 connected to the positive electrode of a Zener diode 24 producing a voltage Vz. The other Zener electrode is connected to a common line 26. The Zener voltage generally is temperature sensitive, as discussed above with reference to Figure 1.
  • The output terminal 28 of the amplifier 20 produces an output voltage Vo responsive to the applied Zener voltage. A negative feedback circuit generally indicated at 30 is connected between the output terminal 28 and the common line 26.
  • This feedback circuit 30 includes a number of series-connected elements comprising a first segment 32 with a resistor R1 and diode D1, a second segment 34 with a resistor R2 and a diode D2, and a resistor R3. The junction point 36 between the two segments 32, 34 is connected to the inverting input terminal 38 of the amplifier 20.
  • In considering the operation of this circuit, let it be assumed first that R1 = R2, that R3 = 0, and that the diodes D1, D2 are matched. The voltage across the first segment 32 (i.e., at the amplifier input terminal 38) will be essentially Vz, due to feedback action. Since R1 and R2 are equal, and carry equal currents, the voltage Vx at the right-hand end of R2 (and at the output terminal 28) will be twice Vz. This relationship will hold true regardless of changes in temperature.
  • If the Zener diode 24 has a zero TC (rare, but possible), the output Vo will be temperature invariant. However, because there is a diode in each feedback segment 32, 34, and because the VBE of a diode has a negative TC, the current in the feedback circuit nevertheless will vary with temperature.
  • With a Zener diode 24 having a negative TC (α1 < 0), the voltage Vz at the amplifier input terminals 22 and 38 will decrease with increasing temperature as will the output voltage Vo. Assuming that the VBE of diode D1 has a TC which is more negative than the negative TC of Vz, the current through the feedback resistor R1 (and thus through R2) will have a positive TC. This is because the temperature-induced negative change in VBE of diode D1 with increasing temperature will be greater than the negative change in Zener voltage Vz, so that the net voltage across R1 will increase with temperature, as will the current through R1 (and R2).
  • If R3 now is made greater than zero (R3 > 0), the output Vo will increase due to the added voltage drop across R3 resulting from the feedback current. This added increment to the output voltage will have a positive TC (since the feedback current will in the circumstances noted above have a positive TC). By adjusting the value of R3, the positive TC of the voltage across R3 can compensate for the negative TC of the Zener voltage Vz, so that the output Vo can be made (essentially) invariant with temperature.
  • The same circuit can be used to provide similar compensation for Zeners with a positive TC. In this case, rather than making R3 > 0, the value of R2 will be reduced. In effect, R3 will be made "negative" (although of course a negative resistance is not actually present in the circuit). The result will be that Vo is reduced (since the voltage drop across a reduced R2 is correspondingly reduced), and the TC of the voltage across "negative" R3 will be negative, thus compensating for the positive TC of the Zener.
  • The value of R3 thus can with advantage be viewed as an incremental deviation (± R) from the nominal value of R2 where R2 = R1. To provide for a practical trimming sequence, the initial value of R2 can be set significantly less than R1 (R2 << R1), and R2 can be thought of as R2 "nominal" in series with an initially negative R3 of relatively large value. The circuit without any trimming should be capable of compensating for a limiting (maximum) positive TC in the Zener 24. Since the actual Zener normally will have a less positive TC than this limiting value, R2 can be trimmed up (increased in ohmic value) until the correct magnitude is reached to provide compensation for the actual Zener involved (including Zeners with negative TC).
  • The range of Zener TC which can be compensated is constrained by the relationship between the diode VBE and the magnitude of the Zener voltage Vz which determines the maximum TC of the current in R1 and R2. To increase this range, more diodes can be added to both feedback segments 32, 34.
  • In determining the number of diodes in each feedback segment 32, 34, it may turn out that the desired number of diode drops in each may not be an integer. Fractional values of VBE can be achieved and the circuit simplified (at least in the number of junctions required) by using a "VBE multiplier" of known configuration, as shown at 40 in Figure 3 (and also as described in Brokaw Patent 4,622,512). The VBE of transistor Q4 appears across resistor R6, and the accompanying current through R6, R5 and R4 produces a multiplied version of that VBE across resistors R5 and R4.
  • The feedback voltage for input terminal 38 is tapped off an intermediate point 36A between R4 and R5. Thus the VBE of one transistor can be "multiplied" to provide effective junction drops in both feedback segments 32A and 34A.
    Here the VBE is effectively multiplied by (1 + (R4 + R5)/R6), and this multiplied voltage is divided between the lower and upper segments in proportions determined by the resistance values.
  • One limitation of the Figure 2 arrangement is that the output voltage Vo will always be at or near 2Vz. To accommodate a larger range of values for the output voltage, a modification as illustrated in general form in Figure 4 can be employed. This configuration uses a feedback circuit 30B where the elements in the second segment 34B have values "k" times the values of the corresponding elements in the lower segment 32B (with k being a preselected constant). Thus the diode drop in the upper segment is kVc, and the series
    resistor R2 = KR1. The output voltage then will be Vo = Vz · (1 + k), for the nominal case where α1 = 0 and Vz = Vm . This Figure 4 relationship can be established in the Figure 3 feedback arrangement by appropriately-sized feedback resistors.
  • By selection of circuit values, Vo can be made a convenient value higher than Vm. In the case of an auto-TC design (referred to above in the section on prior art and as described in more detail below), the nominal value of Vo to which the output will be trimmed must be higher than the maximum anticipated Zener voltage by an amount which allows for the temperature compensation voltage.
  • It may particularly be noted that for negative values of α1, trimming to increase the output TC will increase the output voltage Vo. Conversely, for positive α1, trimming to decrease the output TC (by making R2 < kR1) will lower the output voltage Vo. Thus the direction of voltage change is correct for providing an auto-TC compensation. To achieve that result, it is necessary to establish correct proportions between the output voltage adjustment (change in Vo), and the induced TC.
  • Considering the auto-TC design further, the desired nominal output voltage Vo should first be chosen. This number can be somewhat arbitrary, but must be within practical constraints. It must for example be comfortably higher than the nominal Zener voltage Vm, and it must be within power supply voltage limitations. As an illustration, one might select Vo = 6 volts. To provide a practical example, and with reference to the VBE-multiplier arrangement of Figure 3, the feedback resistors in one circuit were as follows:
  • R1 = 7K
  • R2 = 200 (initially)
  • R4 = 16.17K
  • R5 = 34.39K
  • R6 = 15K
  • Taking the case where the Zener diode produced a voltage Vm = 4.52V at a temperature Tm of -350°C (-78°K), and assuming that the Zener TC is a positive α1 = 1 volt/°C, it was found that for the above simulated circuit a 6V output at 27°C (room temperature) occurred when R2 was trimmed up to 694Ω. A subsequent temperature sweep of 180° about room temperature (i.e., above and below room temperature) resulted in a change in "Zener voltage" of about 360mV. The output voltage Vo changed only about 4 millivolts peak-to-peak, in a convex curve centered roughly about 6 volts, with the output lower than 6V at both ends of the curve. For a simulated Zener with a negative TC of -1/°C, a Vo of 6 volts at room temperature was obtained when R2 was trimmed to 4.56K. The output changed by only about 5mV peak-to-peak over the same 180° temperature sweep, in a curve which was inverted relative to the positive TC Zener curve.
  • In both cases, the value of R2 which made Vo = Vm (1 + k) also resulted in zero TC (or nearly so), thus providing the desired auto-TC feature. Moreover, the circuit provided auto-TC for Zener diodes with either positive or negative TC.
  • With regard to providing an auto-TC feature, it may be noted that R1 can be chosen to give any nominal current through the feedback network at a given temperature. Since Vc has a TC proportional to its value, the TC of the current can be adjusted by adjusting VC. Thus it is possible to independently choose the current and the TC of the current, over some range. This is what makes it possible to find a single value of R3 which compensates both the TC of Vo to zero (or nearly so) and simultaneously sets the output voltage at (1 + k)Vm.
  • To see what value of Vc will achieve this condition, first consider the case where the Zener has a voltage Vm and zero TC. In this case, it will not be necessary to adjust R3 away from zero, the feedback ratio will be (1 + k) at all temperatures, and both Vx and Vo will equal (1 + k)Vm.
  • If a Zener with a negative TC now is substituted so that the output Vo at room-temperature is lower, it will be necessary to increase R3 to bring Vo up to the desired (1 + k)Vm and to give it a zero TC, assuming that Vc has been chosen properly to give auto-TC. Then, at the trimming temperature, the feedback ratio from the amplifier output will differ from 1 + k. As temperature changes, the resulting change in proportions of resistor voltage to voltage source (diode drops) in the feedback network will adjust the feedback ratio to keep Vo constant in the face of changing Vz.
  • If it is imagined that the temperature is changed to Tm (even though physically it might not be possible to do so), the voltage of the Zener should change to Vm, since the characteristic temperature response lines of all Zeners pass through this point (Figure 1). If R3 has been properly adjusted in the feedback, Vo should be at (1 + k)Vm at any temperature, including Tm. However, if R3 is not zero, the ratio of the resistive parts of the feedback would not be (1 + k), although the voltage source component ratio always is.
  • The only way that these conditions can be satisfied simultaneously is if the current in the feedback resistors is zero at the imagined condition where T = Tm , so that the resistors' contribution to the feedback voltage ratio is zero. This requirement will be satisfied if Vc = Vm at Tm . This means that the temperature-response characteristic of Vc is a straight line (assuming linear relations) having a negative TC and passing through the voltage Vm at temperature Tm. This is illustrated by the interrupted line 42 in Figure 1.
  • It is possible to construct a voltage source the behavior of which at circuit temperatures extrapolates to this required behavior at Tm. First, it is noted that a transistor VBE has a negative TC and its voltage extrapolates to go through the bandgap voltage (approximately 1.2V) at 0°K. Choosing Vc to be a multiple of VBE makes it possible to develop such a voltage which extrapolates to Vm at Tm. Using k times this multiple of VBE as the voltage source in the upper segment 34B of the feedback completes the compensation so that trimming R3 to bring Vo to (1 + k)Vm should also cause the TC of Vo to be zero.
  • In the Figure 3 configuration, the magnitude of Vc is set by the values of the resistors in the feedback network. In the example given above, where Vm = 4.52V, it is necessary to select the resistors so that the value of Vc at room temperature will, when extrapolated back to Tm (assuming, as always in this analysis, linear relationships) be 4.52V. In the Figure 3 circuit, the value Vc = 4.52V will be represented by the voltage across R5 and R6 (it being noted that at the temperature Tm with Vc = Vm there will be no current through any of the feedback resistors). The total voltage across all three feedback resistors R4, R5 and R6 similarly will be 6V, since that is the selected output voltage. Thus the resistance ratio (R5 +R6)/R4 will be as follows: R5 + R6R4 = 4.526 - 4.52 ≅ 3.04 It will be seen that the VBE multiplier should produce a total of about 4 VBEs, with one VBE across R6, about two VBEs across R5, and about one VBE across R4.
  • Now considering the conditions at room temperature, with R2 adjusted to provide an output Vo with zero TC at an output Vo of 6V, just as it was when the temperature was imagined to be at Tm, except that now current will be flowing through the feedback resistors. Since the VBE multiplier voltage ratio of the two segments 32A, 34A is to be the same at room temperature as when at temperature Tm, the ratios of resistors R1 and R2 must conform to the previously determined ratio of resistors R5 + R6 to R4 in order that the output be 6V. That is: R2/R1 = (6 - 4.52)/4.52. If R1 is set at 7K for practical reasons, then R2 (nominal) will be about 2.3K, for the nominal case when the Zener TC = 0. (Of course, the initial value of R2 will be much less, say about 200Ω, in order that it can be trimmed in one direction to cover all of the possible Zener characteristics from positive to negative TCs.)
  • Having determined the conditions for two operating points (T = Tm ; T = room temperature) for an output of 6V with zero TC, it will be seen that the output Vo must also be 6V, with zero TC, at all other operating points. This is because the characteristics of all of the elements in the circuit have been assumed to be linear, so that their summation or differencing must also be a linear relationship.
  • To provide a more detailed mathematical explanation of these relationships, the following is presented with reference to Figure 4: Vo =Vx + V3 Vo = (Vm1(T-Tm)(1 + k) + (R3/R1)(α1 - α2)(T-Tm) =Vm (1+k) = α1(T-Tm)(1+k) + (R3/R1)(α1 - α2)(T-Tm) (where α2 is the temperature coefficient of Vc)
  • The first term of this expression is the same as the nominal value of Vo for which the circuit is intended. To get Vo to the nominal value, R3 must be adjusted to make the remaining terms zero. α1(T-Tm)(1+k) + (R3/R1)(α1 - α2)(T-Tm) = 0
  • The temperature dependence can be divided out with the factor (T-Tm) to give: α1(1+k) + (R3/R1)(α1 - α2) = 0 (R3/R1)(α2 - α1) = α1(1+k) R3 = R1(1+k)α1/(α21)
  • This value of R3 should cause Vo = Vm(1+k) = Vo (nominal) at all temperatures.
  • There are practical constraints however. Vc is not a battery, but something constructed of forward-biased diode drops. Therefore, it must have some bias current to operate which implies that the voltage across R1 must be positive for all operating temperatures and bias conditions. Presumably T-Tm will always be positive, since Tm is often less than 0° Kelvin. Therefore the constraint that 12) (T-Tm) > 0 requires that α1 - α2 > 0 or α1 > α2. Since it is desired to accommodate a range of α1 which may be positive or negative, α2 must be made more negative than the most negative value of α1. That is, the TC of the compensating voltage must be more negative than the most negative Zener TC expected from the process.
  • Another constraint arises from the nature of R3. In practice, R3 can be made large by trimming R2 well beyond its nominal value R2 = kR1. It cannot be made more negative than the value of R2, however, since negative values of R3 are realized in practice by leaving R2 trimmed below its nominal value. Therefore: R3 > - R2 Substituting R2/k = R1 in the expression for R3 gives: R2((1/k)+1)α1/(α2 - α1) > - R2 Since R2 is always positive it may be divided out, and multiplying through by -1 will reverse the inequality and change the denominator to give: 1/k + α1)/(α1 - α2) < 1 Since α1 - α2 > 0 α1/k + α1 < α1 - α2 α1/k < - α2 Since α2 is negative, -α2 will be positive, and assuming k is always positive k > α1/(-α2)
    Since the denominator of the right side is positive, k will be constrained when α1 is positive. For example, if the largest anticipated Zener TC α1(max) = + 2mV/°C and α2 = -6mV/°C, then k > 1/3.
  • With reference to Figure 3, the base emitter voltage of the transistor will fall more-or-less linearly with temperature according to the relation: VBE = VGO - TTo (VGO - VBEO) + KTq lnIIo +mkTq ln ToT The largest component of this expression is the second term which is linear in T. The third term usually reduces the effect of the fourth term, although the circuit described here does not force a strictly PTAT collector current as is often done in bandgap circuits.
  • Common practice, in uncorrected bandgap circuits, is to extrapolate VBE back towards zero using a tangent to the curve at the center of the temperature range. This results in a 0 Kelvin voltage slightly higher than VGO, but the number is useful in a linearized approximation to behavior of VBE vs. temperature.
  • In the auto-TC circuit disclosed herein, it is necessary to extrapolate the behavior of VBE back to Tm, the Zener temperature parameter. Using the design temperature value of VBE and the TC at this temperature (or the slope inferred from VBE and the 0 Kelvin extrapolation as otherwise determined), an extrapolated voltage for VBE at Tm can be calculated. Denoting this value VE, the ratio of Vm to VE will determine the "number" of VBEs to be produced across R5 and R6. The value of R6 can be selected from biasing considerations by determining how much of the total current in R1 can be diverted to R4, R5 and R6. Then, R5 = R6 ((Vm/VE)-1). This will cause the voltage across R5 and R6 to approximate the function Vm + α2(T-Tm) where α2 is a multiple of the design temperature TC of VBE. An error will result from the base current of the transistor Q4, but this will generally be small. If low β is a problem, the error can be reduced by using an integral number of diode connected transistors less than Vm/VE, and multiplying only one to get any fractional part (see Figure 6).
  • The proper upper segment compensating voltage kVc can be produced by making R4 = k(R5 + R6), for the value of k selected to fit the design goals and previous constraints. Again a mix of diodes and one multiplied VBE can reduce base current error. Given the nominal VBE and its multiplied value, the nominal voltage across R1 can be calculated based on expected Zener voltage. This voltage together with the selected operating current for the VBE multiplier determines R1. The nominal value of R2 is kR1; however, the actual value to use will depend on the expected negative values calculated for R3. Its trim range will then depend on the positive values for R3.
  • The circuit also can be analyzed by holding R2 constant (R3 = 0). It will be found from such analysis that the circuit can be trimmed by adjusting R1.
  • Figure 5 presents a detailed circuit diagram of a voltage reference in accordance with this invention and suitable for adaptation to IC format. A dashed-line box 20 indicates the operational amplifier, as shown in the somewhat simplified diagrams previously discussed. The feedback circuit 30A is of the VBE-multiplier type described with reference to Figure 3. A start-up circuit 46 is provided in the usual way.
  • Figure 6 presents a modified form of feedback circuit 30C for the voltage reference of Figure 5, to reduce errors due to base current in the VBE multiplier transistor Q4. In this modification a pair of diode-connected transistors Q10 and Q11 have been connected in series with the transistor Q4 to produce the required integral number of VBEs, with the fractional part for the lower feedback segment being supplied by the VBE multiplier across R5. Similarly, an additional transistor-connected diode Q5 has been inserted between R4 and R2 with the fractional part of VBE for the upper segment appearing across R4. The voltage between the network junction point 36C and the top of R1 will be about 3-1/3 VBEs. With this circuit the required extrapolated value for VBE can be obtained with a smaller total resistance in the multiplier portion of the circuitry (i.e., R4 and R5), so the base current of Q4 will flow through a smaller resistance (R4), and thus cause less voltage error due to base current.

Claims (16)

  1. A temperature-compensated voltage reference for use with a class of Zener diodes made by a single process, said voltage reference comprising:
    an amplifier (20) having input means and an output circuit for producing a reference voltage;
    a Zener diode (24) of said class connected to said amplifier input means;
    a feedback network (30) coupled to said output circuit;
    said feedback network comprising first and second serial segments (32, 34), wherein said second segment is connected to the output circuit of the amplifier,
    said first and second segments (32, 34) respectively including first and second resistance means;
    means connecting an intermediate point between said serial segments (32, 34) to said input means to furnish thereto a feedback signal representing the voltage across said first voltage segment (32), said feedback signal being made to correspond to the Zener diode voltage supplied to said input means;
    means developing a temperature-responsive voltage having a negative temperature coefficient being associated with said first segment to develop a temperature-responsive current in said first segment having a positive temperature coefficient;
    characterized by
    said current flowing through said first segment (32) equally flowing through said resistance means of said second segment (34) to produce a corresponding voltage drop thereacross;
    the magnitude of the voltage produced in said second segment (34) being predeterminedly proportional to the magnitude of the voltage produced in said first segment (32);
    the values of said first and second resistance means being set to effect temperature compensation of that reference voltage to compensate for either a positive or a negative temperature coefficient of the Zener diode voltage such that the current in said first segment resistance means is in accordance with said Zener diode voltage and the temperature-responsive voltage developed by said temperature responsive voltage means associated with said first segment (32).
  2. A temperature-compensated Zener-diode voltage reference as claimed in Claim 1, wherein the temperature-responsive voltage means of said first segment (32) is sized to be equal to said particular voltage level when extrapolated to said particular temperature.
  3. A temperature-compensated Zener-diode voltage reference as claimed in Claim 1 or 2, wherein the temperature-coefficient of said temperature-responsive means of said first segment (32) is more negative than the most negative temperature coefficient expected from said class of Zener diodes.
  4. A temperature-compensated Zener-diode voltage reference as claimed in any of Claims 1 to 3, wherein said feedback network comprises a bipolar transistor (Q4) with a VBE multiplier circuit (40) so arranged that a first part of the total VBE voltage is effectively in said first segment (32) and a second part is effectively in said second segment (34).
  5. A temperature-compensated Zener-diode voltage reference as claimed in Claim 4, including at least one series diode (Q10, Q11) connected in said first segment (32) to provide for reduced resistances in said VBE multiplier circuit (40) so as to reduce errors due to the base current of said transistor (Q4).
  6. A temperature-compensated Zener-diode voltage reference as claimed in any of Claims 1 to 5 wherein the resistive element in said second segment (34) is trimmable to adjust the reference voltage to a predetermined nominal level while optimizing the temperature compensation of said reference voltage.
  7. A temperature-compensated voltage reference as claimed in any of Claims 1 to 6, wherein the nominal values of said second segment resistance and the voltage of the second segment voltage-producing means are sized to be (1 + k) times the first segment resistance and the voltage of the first segment voltage-producing means, where "k" is a preselected constant.
  8. A temperature-compensated Zener-diode voltage reference as claimed in any of claims 1 to 7, wherein the values of said first and second resistance means being set to produce a predetermined nominal reference voltage.
  9. The method of temperature-compensating the voltage of a Zener-diode comprising:
    directing to the input means of an amplifier (20) a voltage derived from the Zener-diode voltage, said amplifier having an output circuit producing a reference voltage; wherein
    a feedback network (30) being coupled to said output circuit;
    said feedback network comprising first and second serial segments (32, 34) wherein said second segment is connected to the output circuit of the amplifier,
    said first and second segments (32, 34) respectively including first and second resistance means;
    furnishing a feedback signal representing the voltage across said first voltage segment (32) to said input means, wherein means connect an intermediate point between said serial segments (32, 34) to said input means, said feedback signal being made to correspond to the Zener-diode voltage supplied to said input means;
    developing a temperature-responsive current in said first segment having a positive temperature coefficient, wherein means developing a temperature-responsive voltage having a negative temperature coefficient are associated with said first segment,
    characterized by
    producing a voltage drop corresponding to said current flowing through said first segment (32) equally flowing through said resistance means of said second segment (34),
    setting the magnitude of the voltage produced in said second segment (34) to be predeterminedly proportional to the magnitude of the voltage produced in said first segment (32);
    setting the values of said first and second resistance means to effect temperature compensation of that reference voltage to compensate for either a positive or a negative temperature coefficient of the Zener-diode voltage such that the current in said first segment resistance means is in accordance with said Zener-diode voltage and the temperature-responsive voltage developed by said temperature responsive voltage means associated with said first segment (32).
  10. The method of temperature-compensating the voltage of a Zener diode as claimed in Claim 9, including the step of trimming one of said resistance means to fix said output voltage at a preselected level.
  11. The method of temperature-compensating the voltage of a Zener diode as claimed in Claim 10, including the step of trimming said one resistance means to produce a predetermined output voltage level and simultaneously effect optimal temperature compensation of that output voltage.
  12. The method of temperature-compensating the voltage of a Zener diode as claimed in Claim 10 or 11, wherein the resistance means in said second segment is trimmed to produce said predetermined output voltage level.
  13. The method of temperature-compensating the voltage of a Zener diode as claimed in any of Claims 9 to 12, wherein said class of diodes have temperature-responsive voltage characteristics all of which pass through a specific voltage at a specific temperature;
    sizing the magnitude of said temperature-responsive voltage means in said first segment (32) to a value which when extrapolated back to said specific temperature, will be equal to said specific voltage.
  14. The method of any of Claims 9 to 13 wherein said feedback current of said one segment (32) is controlled to be proportional to the difference between said Zener diode voltage and said first temperature-responsive voltage.
  15. The method of any of Claims 9 to 14 wherein said negative feedback current is derived at least substantially from said amplifier output circuit.
  16. The method of any of claims 9 to 15 setting the values of said first and second resistance means to produce a predetermined nominal reference voltage.
EP92918698A 1991-08-21 1992-08-20 Method for temperature-compensating zener diodes having either positive or negative temperature coefficients Expired - Lifetime EP0600003B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US74808791A 1991-08-21 1991-08-21
US748087 1991-08-21
PCT/US1992/007039 WO1993004423A1 (en) 1991-08-21 1992-08-20 Method for temperature-compensating zener diodes having either positive or negative temperature coefficients

Publications (3)

Publication Number Publication Date
EP0600003A1 EP0600003A1 (en) 1994-06-08
EP0600003A4 EP0600003A4 (en) 1994-11-02
EP0600003B1 true EP0600003B1 (en) 2000-03-29

Family

ID=25007954

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92918698A Expired - Lifetime EP0600003B1 (en) 1991-08-21 1992-08-20 Method for temperature-compensating zener diodes having either positive or negative temperature coefficients

Country Status (4)

Country Link
EP (1) EP0600003B1 (en)
JP (1) JPH06510149A (en)
DE (1) DE69230856T2 (en)
WO (1) WO1993004423A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4511697B2 (en) * 2000-07-27 2010-07-28 Necエンジニアリング株式会社 Temperature compensation circuit
JP4578427B2 (en) * 2006-03-28 2010-11-10 株式会社豊田中央研究所 Stress temperature measuring device
US9104222B2 (en) * 2012-08-24 2015-08-11 Freescale Semiconductor, Inc. Low dropout voltage regulator with a floating voltage reference
EP3553625A1 (en) 2018-04-13 2019-10-16 NXP USA, Inc. Zener diode voltage reference circuit
CN109343606B (en) * 2018-11-15 2023-11-10 扬州海科电子科技有限公司 Separation compensation temperature control device
EP3680745B1 (en) 2019-01-09 2022-12-21 NXP USA, Inc. Self-biased temperature-compensated zener reference
EP3812873A1 (en) 2019-10-24 2021-04-28 NXP USA, Inc. Voltage reference generation with compensation for temperature variation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6806969A (en) * 1968-05-17 1969-05-27
GB1549689A (en) * 1975-07-28 1979-08-08 Nippon Kogaku Kk Voltage generating circuit
GB1484789A (en) * 1975-09-02 1977-09-08 Standard Telephones Cables Ltd Power supply circuits
DE2645182C2 (en) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperature-compensated Zener diode arrangement, operating circuit for this and use of the arrangement with this operating circuit
US4313083A (en) * 1978-09-27 1982-01-26 Analog Devices, Incorporated Temperature compensated IC voltage reference
US4315209A (en) * 1980-07-14 1982-02-09 Raytheon Company Temperature compensated voltage reference circuit
US4562400A (en) * 1983-08-30 1985-12-31 Analog Devices, Incorporated Temperature-compensated zener voltage reference
US4622512A (en) * 1985-02-11 1986-11-11 Analog Devices, Inc. Band-gap reference circuit for use with CMOS IC chips
US4668903A (en) * 1985-08-15 1987-05-26 Thaler Corporation Apparatus and method for a temperature compensated reference voltage supply
US4677369A (en) * 1985-09-19 1987-06-30 Precision Monolithics, Inc. CMOS temperature insensitive voltage reference
US4774452A (en) * 1987-05-29 1988-09-27 Ge Company Zener referenced voltage circuit

Also Published As

Publication number Publication date
DE69230856D1 (en) 2000-05-04
EP0600003A4 (en) 1994-11-02
JPH06510149A (en) 1994-11-10
EP0600003A1 (en) 1994-06-08
DE69230856T2 (en) 2000-11-09
WO1993004423A1 (en) 1993-03-04

Similar Documents

Publication Publication Date Title
US5774013A (en) Dual source for constant and PTAT current
US4352056A (en) Solid-state voltage reference providing a regulated voltage having a high magnitude
EP1557679B1 (en) High side current monitor
US7173407B2 (en) Proportional to absolute temperature voltage circuit
US4088941A (en) Voltage reference circuits
US4633165A (en) Temperature compensated voltage reference
EP0725923B1 (en) Two terminal temperature transducer having circuitry which controls the entire operating current to be linearly proportional with temperature
US5917311A (en) Trimmable voltage regulator feedback network
US4298835A (en) Voltage regulator with temperature dependent output
US4797577A (en) Bandgap reference circuit having higher-order temperature compensation
WO1998048334A9 (en) Precision bandgap reference circuit
USRE30586E (en) Solid-state regulated voltage supply
US4636710A (en) Stacked bandgap voltage reference
US4399398A (en) Voltage reference circuit with feedback circuit
US4302718A (en) Reference potential generating circuits
US4665356A (en) Integrated circuit trimming
US5252908A (en) Apparatus and method for temperature-compensating Zener diodes having either positive or negative temperature coefficients
EP0656574B1 (en) Voltage reference with linear, negative, temperature coefficient
US5621307A (en) Fast recovery temperature compensated reference source
EP0600003B1 (en) Method for temperature-compensating zener diodes having either positive or negative temperature coefficients
US4888471A (en) An improvement in a device for high accuracy thermal regulations of an enclosure
US5886511A (en) Temperature insensitive foldback network
US4114053A (en) Zero temperature coefficient reference circuit
EP0080620B1 (en) Band gap voltage regulator circuit
US4914357A (en) Temperature compensated foldback current limiting

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19940321

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB

A4 Supplementary search report drawn up and despatched

Effective date: 19940915

AK Designated contracting states

Kind code of ref document: A4

Designated state(s): DE FR GB

17Q First examination report despatched

Effective date: 19960823

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REF Corresponds to:

Ref document number: 69230856

Country of ref document: DE

Date of ref document: 20000504

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20110818

Year of fee payment: 20

Ref country code: DE

Payment date: 20110817

Year of fee payment: 20

Ref country code: GB

Payment date: 20110817

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69230856

Country of ref document: DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69230856

Country of ref document: DE

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Expiry date: 20120819

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20120821

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20120819