EP0600003A1 - Procede de compensation de la temperature de diodes zener presentant des coefficients de temperature soit positifs soit negatifs - Google Patents

Procede de compensation de la temperature de diodes zener presentant des coefficients de temperature soit positifs soit negatifs

Info

Publication number
EP0600003A1
EP0600003A1 EP92918698A EP92918698A EP0600003A1 EP 0600003 A1 EP0600003 A1 EP 0600003A1 EP 92918698 A EP92918698 A EP 92918698A EP 92918698 A EP92918698 A EP 92918698A EP 0600003 A1 EP0600003 A1 EP 0600003A1
Authority
EP
European Patent Office
Prior art keywords
voltage
temperature
segment
zener
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP92918698A
Other languages
German (de)
English (en)
Other versions
EP0600003B1 (fr
EP0600003A4 (fr
Inventor
Adrian Paul Brokaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices Inc
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Publication of EP0600003A1 publication Critical patent/EP0600003A1/fr
Publication of EP0600003A4 publication Critical patent/EP0600003A4/fr
Application granted granted Critical
Publication of EP0600003B1 publication Critical patent/EP0600003B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/463—Sources providing an output which depends on temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes

Definitions

  • This invention relates to temperature-compensated Zener-diode voltage references. More particularly, this invention relates to a so-called "auto-TC" voltage reference wherein trimming of a circuit resistance to give a predetermined output voltage will simultaneously optimize the temperature compensation for that output voltage.
  • the present invention in one preferred embodiment provides an auto-TC voltage reference wherein an operational amplifier receives at one input the voltage of a Zener diode and at its other input receives a compensation signal from a feedback circuit comprising a transistor and resistor network. When one of the resistors of the network is trimmed to give a nominal output voltage for the reference, the TC of the reference voltage will have been reduced to zero, or nearly so.
  • the circuitry is capable of compensating Zener diodes of either positive or negative TC.
  • FIGURE 1 is a graph showing the temperature- response characteristics of Zener diodes made by the same process
  • FIGURE 2 is a schematic to illustrate the functioning of a voltage reference in accordance with the invention.
  • FIGURE 3 shows a modified circuit based on Figure 2 but utilizing only a single transistor in the feedback network
  • FIGURE 4 presents a generalized schematic diagram to illustrate further aspects of the invention
  • FIGURE 5 is a circuit diagram showing a circuit design suitable for an integrated circuit
  • FIGURE 6 is a circuit diagram showing a modification to the circuit of Figure 5.
  • the graph of Figure 1 depicts in an idealized manner the temperature response characteristics of the avalanche voltage (V z ) versus temperature of a group of Zener diodes produced by the same process.
  • the slopes of upper and lower solid lines 10 and 12 illustrate extremes of positive and negative temperature coefficients (TC) respectively. Any one diode made by the process can have a TC which lies anywhere between these extremes. It will be assumed in the following discussion that the temperature response characteristic is linear, which is approximately correct as a practical matter.
  • T m is shown as being
  • V z V m + ⁇ 1 (T - T m ) where: V z is the avalanche voltage
  • V m is a voltage parameter which is relatively insensitive to variations in a given process (and typically is in the range of 4.4V to 4.8V for a number of known processes),
  • T m is a temperature parameter which is relatively insensitive to variations in a given process
  • ⁇ 1 is a parameter with a value associated with each fabricated device.
  • This circuit includes an operational amplifier 20 having its non-inverting input terminal 22 connected to the positive electrode of a Zener diode 24 producing a voltage V z .
  • the other Zener electrode is connected to a common line 26.
  • the Zener voltage generally is temperature sensitive, as discussed above with reference to Figure 1.
  • the output terminal 28 of the amplifier 20 produces an output voltage V o responsive to the applied
  • a negative feedback circuit generally indicated at 30 is connected between the output terminal 28 and the common line 26.
  • This feedback circuit 30 includes a number of series-connected elements comprising a first segment 32 with a resistor R1 and diode D1, a second segment 34 with a resistor R2 and a diode D2 , and a resistor R3.
  • the junction point 36 between the two segments 32, 34 is connected to the inverting input terminal 38 of the amplifier 20.
  • the Zener diode 24 has a zero TC (rare, but possible)
  • the output V o will be temperature invariant.
  • the V BE of a diode has a negative TC, the current in the feedback circuit nevertheless will vary with temperature.
  • the initial value of R2 can be set significantly less than R1 (R2 ⁇ R1), and R2 can be thought of as R2 "nominal" in series with an initially negative R3 of relatively large value.
  • the circuit without any trimming should be capable of compensating for a limiting (maximum) positive TC in the Zener 24. Since the actual Zener normally will have a less positive TC than this limiting value, R2 can be trimmed up (increased in ohmic value) until the correct magnitude is reached to provide compensation for the actual Zener involved (including Zeners with negative TC).
  • Zener TC which can be compensated is constrained by the relationship between the diode V BE and the magnitude of the Zener voltage V z which determines the maximum TC of the current in R1 and R2. To increase this range, more diodes can be added to both feedback
  • number of diode drops in each may not be an integer.
  • V BE Fractional values of V BE can be achieved and the circuit simplified (at least in the number of junctions required) by using a "V BE multiplier" of known configuration, as shown at 40 in Figure 3 (and also as described in Brokaw Patent 4,622,512).
  • V BE multiplier of known configuration
  • the feedback voltage for input terminal 38 is tapped off an intermediate point 36A between R4 and R5.
  • V BE of one transistor can be "multiplied" to
  • V BE is effectively multiplied by (1 + (R4 + R5)/R6), and this multiplied voltage is divided between the lower and upper segments in proportions determined by the resistance values.
  • This Figure 4 relationship can be established in the Figure 3 feedback arrangement by appropriately-sized feedback resistors.
  • V o can be made a convenient value higher than V m .
  • the nominal value of V o to which the output will be trimmed must be higher than the maximum anticipated Zener voltage by an amount which allows for the temperature compensation voltage.
  • trimming to increase the output TC will increase the output voltage V o .
  • trimming to decrease the output TC (by making R2 ⁇ kR1) will lower the output voltage V o .
  • the direction of voltage change is correct for providing an auto-TC compensation. To achieve that result, it is necessary to establish correct proportions between the output voltage adjustment (change in V o ), and the induced TC.
  • the desired nominal output voltage Vo should first be chosen.
  • R2 200 (initially)
  • R1 can be chosen to give any nominal current through the feedback network at a given temperature. Since V c has a TC proportional to its value, the TC of the current can be adjusted by adjusting V C . Thus it is possible to independently choose the current and the TC of the current, over some range. This is what makes it possible to find a single value of R3 which compensates both the TC of V o to zero (or nearly so) and simultaneously sets the output voltage at (1 + k)V m .
  • V c the voltage at which the Zener has a voltage V m and zero TC .
  • the feedback ratio will be (1 + k) at all temperatures, and both V x and V o will equal (1 + k)V m .
  • V o should be at (1 + k)V m at any temperature, including T m .
  • R3 is not zero, the ratio of the resistive parts of the feedback would not be (1 + k), although the voltage source component ratio always is.
  • V BE has a negative TC and its voltage extrapolates to go through the bandgap voltage (approximately 1.2V) at 0°K. Choosing V c to be a multiple of V BE
  • V BE as the voltage source in the upper segment 34B of the feedback completes the compensation so that trimming R3 to bring V o to (1 + k)V m should also cause the TC of V o to be zero.
  • V c the magnitude of V c is set by the values of the resistors in the feedback network.
  • V m 4.52V
  • V BE multiplier should produce a total of about 4 V BE s, with one V BE across R6, about two V BE s across R5, and about one V BE across R4.
  • V o V x + V 3
  • V o (V m + ⁇ 1 (T-T m ) (1 + k) + (R3/R1) ( ⁇ 1 - ⁇ 2 ) (T-T m )
  • V m (1+k) ⁇ 1 (T-T m )(1+k) + (R3/R1)( ⁇ 1 - ⁇ 2 )(T-T m )
  • R3 R1 (1+k) ⁇ 1 /( ⁇ 2 - ⁇ 1 )
  • V o (nominal) at all temperatures.
  • V c is not a battery, but something constructed of forward-biased diode drops. Therefore, it must have some bias current to operate which implies that the voltage across R1 must be positive for all operating temperatures and bias conditions.
  • T-T m will always be positive, since T m is often less than 0° Kelvin. Therefore the constraint that ( ⁇ 1 - ⁇ 2 ) (T-T m ) > 0 requires that ⁇ 1 - ⁇ 2 > 0 or ⁇ 1 > ⁇ 2 . Since it is desired to accommodate a range of ⁇ 1 which may be positive or negative, ⁇ 2 must be made more negative than the most negative value of ⁇ 1 . That is, the TC of the compensating voltage must be more negative than the most negative Zener TC expected from the process.
  • the largest component of this expression is the second term which is linear in T.
  • the third term usually reduces the effect of the fourth term, although the circuit described here does not force a strictly PTAT collector current as is often done in bandgap circuits.
  • T m the Zener temperature parameter.
  • V BE the design temperature value of V BE and the TC at this temperature (or the slope inferred from V BE and the 0 Kelvin extrapolation as otherwise determined)
  • an extrapolated voltage for V BE at T m can be calculated.
  • V E the ratio of V m to V E will determine the "number" of V BE s to be produced across R5 and R6.
  • FIG. 5 presents a detailed circuit diagram of a voltage reference in accordance with this invention and suitable for adaptation to IC format.
  • a dashed-line box 20 indicates the operational amplifier, as shown in the somewhat simplified diagrams previously discussed.
  • the feed- back circuit 30A is of the V BE -multiplier type described with reference to Figure 3.
  • a start-up circuit 46 is provided in the usual way.
  • Figure 6 presents a modified form of feedback circuit 30C for the voltage reference of Figure 5, to reduce errors due to base current in the V BE multiplier transistor Q4.
  • a pair of diode-connected transistors Q10 and Q11 have been connected in series with the transistor Q4 to produce the required integral number of V BE s, with the fractional part for the lower feedback segment being supplied by the V BE multiplier across R5.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Référence de tension (Vo) à compensation automatique en température dans laquelle un amplificateur opérationnel (20) reçoit au niveau d'une entrée (22), la tension d'une diode Zener (24), et au niveau de son autre entrée (38) un signal de compensation provenant d'un circuit de retour (30A) comprenant un transistor (Q4) ainsi qu'un réseau de résistances (40). Lorsqu'une des résistances du réseau est ajustée afin de donner une tension de sortie nominale utilisée comme référence, le coefficient de température de la tension de référence a été réduit à zéro, ou presque. Le circuit est capable de compenser des diodes Zener de coefficient de température soit positif soit négatif.
EP92918698A 1991-08-21 1992-08-20 Procede de compensation de la temperature de diodes zener presentant des coefficients de temperature soit positifs soit negatifs Expired - Lifetime EP0600003B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US74808791A 1991-08-21 1991-08-21
US748087 1991-08-21
PCT/US1992/007039 WO1993004423A1 (fr) 1991-08-21 1992-08-20 Procede de compensation de la temperature de diodes zener presentant des coefficients de temperature soit positifs soit negatifs

Publications (3)

Publication Number Publication Date
EP0600003A1 true EP0600003A1 (fr) 1994-06-08
EP0600003A4 EP0600003A4 (fr) 1994-11-02
EP0600003B1 EP0600003B1 (fr) 2000-03-29

Family

ID=25007954

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92918698A Expired - Lifetime EP0600003B1 (fr) 1991-08-21 1992-08-20 Procede de compensation de la temperature de diodes zener presentant des coefficients de temperature soit positifs soit negatifs

Country Status (4)

Country Link
EP (1) EP0600003B1 (fr)
JP (1) JPH06510149A (fr)
DE (1) DE69230856T2 (fr)
WO (1) WO1993004423A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4511697B2 (ja) * 2000-07-27 2010-07-28 Ｎｅｃエンジニアリング株式会社 温度補償回路
JP4578427B2 (ja) * 2006-03-28 2010-11-10 株式会社豊田中央研究所 応力温度測定装置
US9104222B2 (en) * 2012-08-24 2015-08-11 Freescale Semiconductor, Inc. Low dropout voltage regulator with a floating voltage reference
EP3553625A1 (fr) 2018-04-13 2019-10-16 NXP USA, Inc. Circuit de référence de tension de diode zener
CN109343606B (zh) * 2018-11-15 2023-11-10 扬州海科电子科技有限公司 一种分离补偿温控装置
EP3680745B1 (fr) * 2019-01-09 2022-12-21 NXP USA, Inc. Référence zener à compensation de température précontrainte
EP3812873A1 (fr) 2019-10-24 2021-04-28 NXP USA, Inc. Génération de tension de référence comprenant une compensation pour la variation de température

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638049A (en) * 1968-05-17 1972-01-25 Philips Corp Network having a resistance the temperature coefficient of which is variable at will
FR2319932A1 (fr) * 1975-07-28 1977-02-25 Nippon Kogaku Kk Alimentation electrique regulee a tension constante
GB2080581A (en) * 1980-07-14 1982-02-03 Raytheon Co Temperature compensated voltage reference circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1484789A (en) * 1975-09-02 1977-09-08 Standard Telephones Cables Ltd Power supply circuits
DE2645182C2 (de) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperaturkompensierte Z-Diodenanordnung, Betriebsschaltung hierfür und Verwendung der Anordnung mit dieser Betriebsschaltung
US4313083A (en) * 1978-09-27 1982-01-26 Analog Devices, Incorporated Temperature compensated IC voltage reference
US4562400A (en) * 1983-08-30 1985-12-31 Analog Devices, Incorporated Temperature-compensated zener voltage reference
US4622512A (en) * 1985-02-11 1986-11-11 Analog Devices, Inc. Band-gap reference circuit for use with CMOS IC chips
US4668903A (en) * 1985-08-15 1987-05-26 Thaler Corporation Apparatus and method for a temperature compensated reference voltage supply
US4677369A (en) * 1985-09-19 1987-06-30 Precision Monolithics, Inc. CMOS temperature insensitive voltage reference
US4774452A (en) * 1987-05-29 1988-09-27 Ge Company Zener referenced voltage circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638049A (en) * 1968-05-17 1972-01-25 Philips Corp Network having a resistance the temperature coefficient of which is variable at will
FR2319932A1 (fr) * 1975-07-28 1977-02-25 Nippon Kogaku Kk Alimentation electrique regulee a tension constante
GB2080581A (en) * 1980-07-14 1982-02-03 Raytheon Co Temperature compensated voltage reference circuit

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ISSCC79, 15 February 1979, PEALE BALLROOM HOLIDAY INN pages 136 - 137 HOLLOWAY ET AL. 'Circuit Techniques for Archieving High-Speed Resolution A/D Conversion' *
See also references of WO9304423A1 *

Also Published As

Publication number Publication date
DE69230856T2 (de) 2000-11-09
JPH06510149A (ja) 1994-11-10
EP0600003B1 (fr) 2000-03-29
DE69230856D1 (de) 2000-05-04
WO1993004423A1 (fr) 1993-03-04
EP0600003A4 (fr) 1994-11-02

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