EP0587136A3 - Mischschaltung. - Google Patents

Mischschaltung. Download PDF

Info

Publication number
EP0587136A3
EP0587136A3 EP93114412A EP93114412A EP0587136A3 EP 0587136 A3 EP0587136 A3 EP 0587136A3 EP 93114412 A EP93114412 A EP 93114412A EP 93114412 A EP93114412 A EP 93114412A EP 0587136 A3 EP0587136 A3 EP 0587136A3
Authority
EP
European Patent Office
Prior art keywords
mixer circuit
mixer
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP93114412A
Other languages
English (en)
French (fr)
Other versions
EP0587136A2 (de
Inventor
Nobuo C O Yokohama Works Shiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP0587136A2 publication Critical patent/EP0587136A2/de
Publication of EP0587136A3 publication Critical patent/EP0587136A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
EP93114412A 1992-09-11 1993-09-08 Mischschaltung. Withdrawn EP0587136A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24322992A JP3148010B2 (ja) 1992-09-11 1992-09-11 ミキサ回路
JP243229/92 1992-09-11

Publications (2)

Publication Number Publication Date
EP0587136A2 EP0587136A2 (de) 1994-03-16
EP0587136A3 true EP0587136A3 (de) 1995-01-04

Family

ID=17100761

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93114412A Withdrawn EP0587136A3 (de) 1992-09-11 1993-09-08 Mischschaltung.

Country Status (4)

Country Link
US (1) US5444399A (de)
EP (1) EP0587136A3 (de)
JP (1) JP3148010B2 (de)
CA (1) CA2104542A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100323775B1 (ko) * 1993-01-08 2002-06-20 이데이 노부유끼 모놀리식마이크로웨이브반도체집적회로및화합물반도체로이루어지는전계효과형트랜지스터의바이어스안정화회로
DE69517775T2 (de) * 1994-10-28 2001-02-22 Murata Mfg. Co., Ltd. Mischer und Frequenzumsetzungsprozess unter Verwendung desselben
JP3227641B2 (ja) * 1994-10-28 2001-11-12 株式会社村田製作所 ミキサ回路および周波数変換方法
JPH08222977A (ja) * 1995-02-14 1996-08-30 Matsushita Electric Ind Co Ltd 半導体回路
EP0742640B1 (de) * 1995-04-12 2001-07-04 Matsushita Electric Industrial Co., Ltd. Eingangsschaltung
US5570056A (en) * 1995-06-07 1996-10-29 Pacific Communication Sciences, Inc. Bipolar analog multipliers for low voltage applications
US6138000A (en) * 1995-08-21 2000-10-24 Philips Electronics North America Corporation Low voltage temperature and Vcc compensated RF mixer
US5767726A (en) * 1996-10-21 1998-06-16 Lucent Technologies Inc. Four terminal RF mixer device
US5826183A (en) * 1997-03-05 1998-10-20 Samsung Electronics Co., Ltd. Circuit for simultaneous frequency doubler and mixer
US6351632B1 (en) 1998-10-13 2002-02-26 Institute Of Microelectronics Mixer with high order intermodulation suppression and robust conversion gain
JP2003078355A (ja) * 2001-09-05 2003-03-14 Mitsubishi Electric Corp ミキサ回路
US7512394B2 (en) * 2004-11-16 2009-03-31 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wideband up-conversion mixer
US7509112B2 (en) * 2004-11-16 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wideband image rejection mixer
US7840195B2 (en) * 2006-04-28 2010-11-23 Infineon Technologies Ag Multifunction-RF-circuit

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1543363A (en) * 1975-02-26 1979-04-04 Nippon Electric Co Dual-gate schottky barrier gate field effect transistors
DE2717339C3 (de) * 1977-04-19 1985-12-05 Texas Instruments Deutschland Gmbh, 8050 Freising Schaltungsanordnung zur Kompensation der an einer ersten Gate-Elektrode eines Dual-Gate-MOS-Feldeffekttransistors aufgrund einer an der zweiten Gate-Elektrode dieses Feldeffekttransistors anliegenden veränderlichen Eingangsspannung auftretenden Eingangskapazitätsänderung
US4308473A (en) * 1978-05-24 1981-12-29 Raytheon Company Polyphase coded mixer
JPS55128907A (en) * 1979-03-28 1980-10-06 Nec Corp Reception frequency converter
JPS56107583A (en) * 1980-01-30 1981-08-26 Matsushita Electric Ind Co Ltd Field effect transistor
US4389660A (en) * 1980-07-31 1983-06-21 Rockwell International Corporation High power solid state switch
US4511813A (en) * 1981-06-12 1985-04-16 Harris Corporation Dual-gate MESFET combiner/divider for use in adaptive system applications
JPS5890806A (ja) * 1981-11-26 1983-05-30 Matsushita Electric Ind Co Ltd Fet混合回路
US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
FR2522902A1 (fr) * 1982-03-03 1983-09-09 Labo Electronique Physique Utilisation d'un transistor a effet de champ, du type a double-grille et ile ohmique intercalee, en vue de la rejection d'une bande de frequences
US4658440A (en) * 1984-07-27 1987-04-14 Texas Instruments Incorporated Single balanced self-oscillating dual gate FET mixer
JPS61199306A (ja) * 1985-03-01 1986-09-03 Oki Electric Ind Co Ltd 周波数変換器
US4709410A (en) * 1985-04-15 1987-11-24 Raytheon Company Frequency conversion circuits
US4751744A (en) * 1985-05-28 1988-06-14 Texas Instruments Incorporated Monolithic distributed mixer
JPS61295671A (ja) * 1985-06-21 1986-12-26 ハネウエル・インコ−ポレ−テツド 相補形プレ−ナ・ヘテロ構造icおよびその製造方法
JPH0740647B2 (ja) * 1985-09-26 1995-05-01 松下電器産業株式会社 電界効果トランジスタ回路
US4814649A (en) * 1987-12-18 1989-03-21 Rockwell International Corporation Dual gate FET mixing apparatus with feedback means
JPH01288004A (ja) * 1988-05-13 1989-11-20 Matsushita Electric Ind Co Ltd ミキサ
US5196359A (en) * 1988-06-30 1993-03-23 Texas Instruments Incorporated Method of forming heterostructure field effect transistor
US5047816A (en) * 1990-08-21 1991-09-10 Vlsi Technology, Inc. Self-aligned dual-gate transistor
JP2932682B2 (ja) * 1990-11-16 1999-08-09 住友電気工業株式会社 高周波発振回路
US5083050A (en) * 1990-11-30 1992-01-21 Grumman Aerospace Corporation Modified cascode mixer circuit
US5263198A (en) * 1991-11-05 1993-11-16 Honeywell Inc. Resonant loop resistive FET mixer

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A.A. DE SALLES :: "Design and performance of dual-gate GaAs MESFET up-converter", 1983 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, MAY 31- JUNE 3, NEW YORK, US, pages 440 - 442 *
G. WEHRHAHN:: "GaAs FET converter for 23 cm amateur television", ELEKTOR ELECTRONICS., vol. 14, no. 158, August 1988 (1988-08-01), CANTERBURY GB *
PH.B :: "Les transistors TEC à l'arséniure de Gallium", ELECTRONIQUE RADIO PLANS, vol. 8, no. 513, August 1990 (1990-08-01), PARIS FR, pages 59 - 68, XP000142714 *
ROLAND REUSCHLE AND PROF. HARSHAVADAR SHAH :: "Applikationen für Satelliten-Receiver", FUNKSCHAU, vol. 6, no. 21, October 1989 (1989-10-01), MUNCHEN DE, pages 61 - 65, XP000067559 *

Also Published As

Publication number Publication date
JP3148010B2 (ja) 2001-03-19
CA2104542A1 (en) 1994-03-12
EP0587136A2 (de) 1994-03-16
US5444399A (en) 1995-08-22
JPH0697739A (ja) 1994-04-08

Similar Documents

Publication Publication Date Title
EP0592002A3 (de) Integrierte Schaltung für Microwellen.
EP0590475A3 (de) Schutzschalter.
GB2243965B (en) Mixer circuit
EP0597463A3 (en) Thermotherapiesonde.
EP0606094A3 (de) Integrierte monolithische Mikrowellenschaltung.
TW299666U (en) Mixing apparayus
EP0605089A3 (en) Photoresist composition.
EP0580285A3 (de) Selbsttätige Wiedereinschalter.
EP0591870A3 (de) Durch Schmelzsicherung programmierbare verbesserte Steuerschaltung.
EP0603899A3 (de) Treiberschaltung.
EP0620650A3 (de) Schnittstelleschaltung.
EP0656690A3 (de) Transistorschaltung.
GB2262851B (en) R.F. mixer
SG44036A1 (en) Circuit arrangement
EP0572808A3 (de) Antiblockierregelsystem.
EP0587136A3 (de) Mischschaltung.
GB2274404B (en) Mixer
ZA943163B (en) Mixing arrangements.
EP0668864A4 (de) Substituierte biphenylmethylimidazopyridine.
ZA936773B (en) Circuit arrangement
EP0618674A3 (de) Spannung-Strom-Wandlerschaltung.
EP0601853A3 (en) Line accommodation circuit.
SG48356A1 (en) Circuit arrangement
GB9320481D0 (en) Activation circuit
EP0647030A3 (de) Integrierte Schaltungsvorrichtungen.

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB NL SE

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB NL SE

17P Request for examination filed

Effective date: 19950704

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Withdrawal date: 19960507