EP0585972A2 - Halbleiteranordnung und Verfahren zur Herstellung einer Isolationsschicht für diese Anordnung - Google Patents

Halbleiteranordnung und Verfahren zur Herstellung einer Isolationsschicht für diese Anordnung Download PDF

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Publication number
EP0585972A2
EP0585972A2 EP93117585A EP93117585A EP0585972A2 EP 0585972 A2 EP0585972 A2 EP 0585972A2 EP 93117585 A EP93117585 A EP 93117585A EP 93117585 A EP93117585 A EP 93117585A EP 0585972 A2 EP0585972 A2 EP 0585972A2
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EP
European Patent Office
Prior art keywords
substrate
oxide film
semiconductor device
nitriding
insulating film
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Application number
EP93117585A
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English (en)
French (fr)
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EP0585972A3 (en
Inventor
Takashi Hori
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication date
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Publication of EP0585972A2 publication Critical patent/EP0585972A2/de
Publication of EP0585972A3 publication Critical patent/EP0585972A3/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Definitions

  • the present invention relates to a minute metal oxide semiconductor field-effect device (hereinafter referred to as MOS device) and a method for the production of a high-performance insulating film used in the MOS device.
  • MOS device minute metal oxide semiconductor field-effect device
  • a thermal oxide film formed on a semiconductor substrate was used as the gate oxide film for MOS devices.
  • deterioration of mobility caused by an increase in the electric field acting perpendicular to the channel has become a serious problem. Since the deterioration of mobility reduces the current driving capability and switching speed of the MOS device, it has been one of the major factors working against the further miniaturization of the MOS device.
  • nitride oxide film instead of the thermal oxide film in a minute MOS device for improvement of reliability such as dielectric strength.
  • the nitride oxide film can only provide a very low mobility as compared to the thermal oxide film, which has been one of the serious problems preventing the nitride oxide film from coming in practice.
  • a semiconductor device of this invention which overcomes the above-discussed and numerous other disadvantages and deficiencies of the prior art, comprises a semiconductor substrate and an insulating film disposed on the substrate, wherein the insulating film is a nitride oxide film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas for a nitridation time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degree centigrade.
  • the nitride oxide film is used as a gate insulating film.
  • Another semiconductor device of this invention comprises a semiconductor substrate and an insulating film disposed on the substrate, wherein the insulating film is a nitride oxide film prepared by nitriding a thermal oxide film, which has been formed on the substrate, so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxide film and the substrate.
  • the insulating film is a nitride oxide film prepared by nitriding a thermal oxide film, which has been formed on the substrate, so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxide film and the substrate.
  • the nitride oxide film is used as a gate insulating film.
  • a method for the production of a semiconductor device which overcomes the above-discussed and numerous other disadvantages and deficiencies of the prior art, comprises the steps of forming a thermal oxide film on the substrate and nitriding said thermal oxide film in an atmosphere of nitriding gas for a nitridation time of 10 6.6-T N /225 seconds or shorter wherein T N is the nitridation temperature in degree centigrade.
  • rapid heating by means of radiation is used in the nitriding step.
  • Another method for the production of a semiconductor device comprises the steps of forming a thermal oxide film on the substrate and nitriding the thermal oxide film in an atmosphere of nitriding gas so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxide film and the substrate.
  • rapid heating by means of radiation is used in said nitriding step.
  • the invention described herein makes possible the objectives of (1) providing a semiconductor device which has a submicron MOS gate insulating film with superior performance to a thermal oxide film; and (2) providing a method for the production of such a semiconductor device.
  • nitride oxide film with a high mobility as well as markedly improved resistance to mobility deterioration caused by a high vertical electric field, in a very short time. Also, redistribution of the impurities formed in the semiconductor substrate can be prevented. Moreover, effective mobility in a high electric field can be improved as compared to thermal oxide films.
  • the semiconductor device of the invention exhibits superior electrical properties when operated at gate driving voltages (V G - V T ) which give an electric field (E) across the nitride oxide film at or above 2 MV/cm, especially at or above 4 MV/cm.
  • the electric filed (E) is preferably at or below 7 MV/cm.
  • FIG. 1a to 1f shows the production of a semiconductor device of this invention.
  • the semiconductor device is of an MOS type, which is produced as follows.
  • an isolation insulating film 4 is formed by, for example, local oxidation of silicon (LOCOS), as shown in Figure 1a.
  • LOC local oxidation of silicon
  • a thermal oxide film 2 is formed on the semiconductor substrate 1 as shown in Figure 1b.
  • the thermal oxide film 2 is converted into a nitride oxide film 3 , as shown in Figure 1c, by heating in an atmosphere of ammonia gas for a short time by the use of a short-time heating furnace.
  • gate electrode material for the gate electrode, such as polysilicon, is deposited on the entire surface and etched to form a gate electrode 5 .
  • source and drain regions 6 are formed in a self-alignment manner by the use of an ion injection method as shown in Figure 1d.
  • an interlayer insulating film 7 is deposited on the entire surface, followed by the formation of contact holes for the source and drain regions 6 as shown in Figure 1e, and then aluminum electrodes 8 are formed as shown in Figure 1f, resulting in an MOS device of this invention.
  • Figure 2 shows the nitrogen profiles measured by Auger spectroscopy in the nitride oxide films formed by nitriding for 120 seconds at temperatures of 950 o C, 1050 o C, and 1150 o C, respectively.
  • the samples used for the measurements correspond to the nitride oxide film 3 shown in Figure 1c.
  • the nitride oxide film has nitride oxide layers formed in the vicinity of the surface of the film, as well as in the vicinity of the interface between the insulating film and the semiconductor substrate, and a higher nitrogen concentration is obtained at a higher nitridation temperature. It can be seen from Figure 2 that a relatively high concentration of nitrogen can be introduced into the insulating film even with such a short nitridation time.
  • MOS device samples having the gate length and gate width both 100 ⁇ m were produced as shown in Figure 1f, and their electrical characteristics were examined.
  • the thickness of the gate oxide film formed was 7.7 nm.
  • the drain current I D and transconductance g m at the room temperature of the 7.7 nm thick oxide film and of the nitride oxide film (NO) formed by nitriding for 60 seconds at 950 o C are plotted against the gate driving voltage V G -V T .
  • the transconductance drops markedly and the drain current is low at high gate driving voltages (1.5 V or higher) because of the significant deterioration of the mobility caused by a high vertical electric field.
  • the drain current I D and transconductance g m at 82 K of the same samples as shown in Figures 3a and 3b are plotted against the gate driving voltage V G -V T .
  • the transconductance drops markedly at high gate driving voltages (1.5 V or higher) and the drain current is low as at room temperature.
  • the oxide film shows a negative transconductance in which the drain current decreases as the gate driving voltage is increased. This is because the deterioration of mobility caused by a high vertical electric field becomes more appreciable as the temperature lowers.
  • FIGS 5a and 5b show the saturation current characteristics at 82 K of the oxide film and the nitride oxide film (NO) formed by nitriding for 60 seconds at 950 o C, respectively.
  • the transconductance is extremely small and the drain current is low at particularly high gate driving voltages (3 V or higher). This is caused because of the aforementioned negative transconductance inherent in the oxide film.
  • the nitride oxide film (NO) it can be seen that the significant improvement is achieved with respect to the deterioration of transconductance at particularly high gate driving voltages (3 V or higher), thus resulting in a very large drain current.
  • the field effect mobility ⁇ FE is defined as follows: where L is the channel length, W is the channel width, V D is the drain voltage, C i is the capacitance per unit area of the insulating film, I D is the drain current, and V G -V T is the gate driving voltage.
  • the field effect mobility ⁇ FE is considered as a mobility for small signals and therefore significantly reflects the tendency of a mobility at each voltage V G -V T .
  • the maximum field effect mobility at relatively low driving voltages is the greatest in the case of the oxide film and decreases as the nitriding proceeds, i.e., as the nitridation time becomes longer or as the nitridation temperature increases.
  • the field effect mobility in a high vertical electric field of 3.3 MV/cm increases markedly even with a very short nitridation time. For example, with nitriding for only 15 seconds at 950 o C, the obtained mobility in a high electric field is approximately two times greater than that obtained in the case of the oxide film.
  • the effective mobility in a high vertical electric field of 3.3 MV/cm at room temperature and at 82 K are plotted against the nitridation time for examination of their dependency on nitriding conditions.
  • the effective mobility ⁇ eff is defined as follows: In contrast to the field effect mobility ⁇ FE mentioned above, the effective mobility ⁇ eff is considered as a mobility for large signals and hence considered to represent the actually measured circuit operation speed more accurately. The effective mobility is affected by both the maximum field effect mobility ⁇ FEmax and the field effect mobility ⁇ FE in a high electric field.
  • Figure 9 shows a graph of the effective mobility ⁇ eff in a high vertical electric field of 4.0 MV/cm, which is measured by Auger spectroscopy, against the nitrogen concentration [N] int in the vicinity of the interface between the insulating film and the substrate.
  • the nitride oxide film used as a gate insulating film of the MOS field-effect device was formed by heating in an atmosphere of ammonia gas for a short time with the use of a short-time heating furnace. It can be seen from Figure 9 that the effective mobility ⁇ eff shows an increase at first as the nitrogen concentration [N] int increases, reaches a maximum at a concentration of around 2 to 3 atomic %, and then monotonously decreases.
  • a nitride oxide film having a nitrogen concentration [N] int of about 8 atomic % or less can be used to obtain an improved effective mobility in a high electric field useful for operation in an actual circuit, as compared to the thermal oxide film.
  • an insulating film having a high mobility can be obtained by an extremely simple method.
  • the deterioration of mobility in a high vertical electric field can be significantly reduced, thus offering useful advantages of a higher current driving capability and a faster circuit operating speed in practical use.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
EP93117585A 1988-12-20 1989-12-20 A semiconductor device and a method for the production of an insulated film used in this device Withdrawn EP0585972A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP321186/88 1988-12-20
JP32118688 1988-12-20

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EP89123598.8 Division 1989-12-20

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EP0585972A2 true EP0585972A2 (de) 1994-03-09
EP0585972A3 EP0585972A3 (en) 1997-08-20

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EP89123598A Withdrawn EP0384031A1 (de) 1988-12-20 1989-12-20 Halbleiteranordnung und Verfahren zur Herstellung einer Isolierschicht für diese Anordnung
EP93117585A Withdrawn EP0585972A3 (en) 1988-12-20 1989-12-20 A semiconductor device and a method for the production of an insulated film used in this device

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EP89123598A Withdrawn EP0384031A1 (de) 1988-12-20 1989-12-20 Halbleiteranordnung und Verfahren zur Herstellung einer Isolierschicht für diese Anordnung

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0690487A1 (de) * 1994-06-03 1996-01-03 Advanced Micro Devices, Inc. Verfahren zur Herstellung von Oxydschichten

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190796A (ja) * 1991-07-30 1993-07-30 Internatl Business Mach Corp <Ibm> ダイナミック・ランダム・アクセス・メモリ・セル用誘電体皮膜およびその形成方法
EP0844668A3 (de) * 1996-11-25 1999-02-03 Matsushita Electronics Corporation MOS-Struktur einer Halbleiteranordnung und Verfahren zur Herstellung

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 52, no. 16, 16 May 1988, NEW YORK US, pages 1698-1700, XP000035660 D.K. SHIH ET AL.: "Metal-oxide-semiconductor characteristics of rapid thermal nitrided thin oxides" *
EXTENDED ABSTRACTS, vol. 88-2, 9 - 14 October 1988, PRINCETON, NEW JERSEY US, pages 433-434, XP000025019 HENSCHEID ET AL.: "Dielectric formation by rapid thermal nitridation" *
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 29, no. 4, 1 April 1982, pages 498-502, XP000579896 ITO T ET AL: "ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS" *
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 35, no. 7, July 1988, NEW YORK US, pages 904-910, XP000005080 T. HORI ET AL.: "Charge-trapping properties of ultrathin nitrided oxides prepared by rapid thermal annealing" *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0690487A1 (de) * 1994-06-03 1996-01-03 Advanced Micro Devices, Inc. Verfahren zur Herstellung von Oxydschichten
US5591681A (en) * 1994-06-03 1997-01-07 Advanced Micro Devices, Inc. Method for achieving a highly reliable oxide film

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Publication number Publication date
KR930008499B1 (ko) 1993-09-07
EP0585972A3 (en) 1997-08-20
EP0384031A1 (de) 1990-08-29
KR900010951A (ko) 1990-07-11

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