EP0567169A1 - Techniques à base d'altération de caractéristique et de décalage de phase absorbant pour améliorer la projection d'image optique - Google Patents

Techniques à base d'altération de caractéristique et de décalage de phase absorbant pour améliorer la projection d'image optique Download PDF

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Publication number
EP0567169A1
EP0567169A1 EP93200845A EP93200845A EP0567169A1 EP 0567169 A1 EP0567169 A1 EP 0567169A1 EP 93200845 A EP93200845 A EP 93200845A EP 93200845 A EP93200845 A EP 93200845A EP 0567169 A1 EP0567169 A1 EP 0567169A1
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EP
European Patent Office
Prior art keywords
phase
shifting
mask
layer
features
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP93200845A
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German (de)
English (en)
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EP0567169B1 (fr
Inventor
Burn Jeng Lin
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Definitions

  • the phase-shifting technique can improve the resolution of coherent or partially coherent optical imaging systems. It has been shown that the normalized resolution k1 can be reduced from 0.7 to 0.35 to improve lithography by two generations.
  • the use of biassing is not limited to uniformly absorptive phase-shifting layers.
  • biassing is not limited to attenuated phase-shifting.
  • FIG. 5 shows that when the blocked phase-shifting system is unbiased, a common E-D window does not exist, even with a relatively high k1 of 0.6. Biassing can bring all these windows together to produce a common window.
  • the biassing technique can similarly improve the alternative-element, the subresolution phase-shifting systems, the rim phase shifting system, and the unattenuated phase-shifting system.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
EP93200845A 1992-04-23 1993-03-24 Techniques à base d'altération de caractéristique et de décalage de phase absorbant pour améliorer la projection d'image optique Expired - Lifetime EP0567169B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/872,784 US5288569A (en) 1992-04-23 1992-04-23 Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging
US872784 1992-04-23

Publications (2)

Publication Number Publication Date
EP0567169A1 true EP0567169A1 (fr) 1993-10-27
EP0567169B1 EP0567169B1 (fr) 2004-01-21

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EP93200845A Expired - Lifetime EP0567169B1 (fr) 1992-04-23 1993-03-24 Techniques à base d'altération de caractéristique et de décalage de phase absorbant pour améliorer la projection d'image optique

Country Status (4)

Country Link
US (1) US5288569A (fr)
EP (1) EP0567169B1 (fr)
JP (1) JP2642034B2 (fr)
DE (1) DE69333393T2 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0650090A1 (fr) * 1993-10-18 1995-04-26 Mitsubishi Denki Kabushiki Kaisha Masque à décalage de phase, méthode de fabrication et méthode d'exposition utilisant un tel masque à décalage de phase
DE19503393A1 (de) * 1994-02-03 1995-08-17 Hyundai Electronics Ind Halbton-Phasenschiebermaske und Verfahren zur Herstellung derselben
EP0708367A1 (fr) * 1994-10-20 1996-04-24 AT&T Corp. Appareil pour décrire des motifs pour utilisation dans le domaine ultra-violet extrême
EP0713142A2 (fr) * 1994-11-17 1996-05-22 International Business Machines Corporation Structure de masque à décalage de phase atténué et alterné en combinaison ainsi que procédés pour sa fabrication
EP0766138A2 (fr) * 1995-09-27 1997-04-02 AT&T Corp. Couche de spin-on-glass comme masque de corrodage à sec pour la fabrication d'un masque métallique au moyen d'un procédé à deux couches
WO1997044710A1 (fr) * 1996-05-20 1997-11-27 E.I. Du Pont De Nemours And Company Plaques d'attenuation integrees pour photomasques avec effet de dephasage
WO2002044812A2 (fr) * 2000-12-01 2002-06-06 Unaxis Usa Inc. Masque a decalage de phase attenue integre et procede de fabrication d'un masque a decalage de phase attenue integre
WO2004021081A2 (fr) * 2002-08-14 2004-03-11 Infineon Technologies Ag Procede pour produire un masque de phase
KR100503833B1 (ko) * 1996-05-20 2005-12-21 토판 포토마스크스, 인크. 광감쇠식내장형위상시프트포토마스크블랭크

Families Citing this family (44)

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US5631109A (en) * 1992-07-17 1997-05-20 Kabushiki Kaisha Toshiba Exposure mask comprising transparent and translucent phase shift patterns
US5536604A (en) * 1992-07-17 1996-07-16 Kabushiki Kaisha Toshiba Exposure mask
KR0135729B1 (en) * 1993-02-12 1998-04-24 Mitsubishi Electric Corp Attenuating type phase shifting mask and method of manufacturing thereof
US5593801A (en) * 1993-02-12 1997-01-14 Mitsubishi Denki Kabushiki Kaisha Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask
JP3205753B2 (ja) * 1993-05-21 2001-09-04 株式会社ハイニックスセミコンダクター ホトリソグラフィ用パターンマスク
US5447810A (en) * 1994-02-09 1995-09-05 Microunity Systems Engineering, Inc. Masks for improved lithographic patterning for off-axis illumination lithography
EP0674223B1 (fr) * 1994-02-14 1997-05-02 International Business Machines Corporation Masque à décalage de phase atténuant et procédé de fabrication
TW270219B (fr) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
US5538833A (en) * 1994-08-03 1996-07-23 International Business Machines Corporation High resolution phase edge lithography without the need for a trim mask
US5478678A (en) * 1994-10-05 1995-12-26 United Microelectronics Corporation Double rim phase shifter mask
US5472814A (en) * 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
US5480747A (en) * 1994-11-21 1996-01-02 Sematech, Inc. Attenuated phase shifting mask with buried absorbers
US5474865A (en) * 1994-11-21 1995-12-12 Sematech, Inc. Globally planarized binary optical mask using buried absorbers
US5478679A (en) * 1994-11-23 1995-12-26 United Microelectronics Corporation Half-tone self-aligning phase shifting mask
US5935736A (en) * 1997-10-24 1999-08-10 Taiwan Semiconductors Manufacturing Company Ltd. Mask and method to eliminate side-lobe effects in attenuated phase shifting masks
US6114071A (en) * 1997-11-24 2000-09-05 Asml Masktools Netherlands B.V. Method of fine feature edge tuning with optically-halftoned mask
US6106979A (en) * 1997-12-30 2000-08-22 Micron Technology, Inc. Use of attenuating phase-shifting mask for improved printability of clear-field patterns
US6077630A (en) 1998-01-08 2000-06-20 Micron Technology, Inc. Subresolution grating for attenuated phase shifting mask fabrication
US6096457A (en) * 1998-02-27 2000-08-01 Micron Technology, Inc. Method for optimizing printing of a phase shift mask having a phase shift error
US5998069A (en) 1998-02-27 1999-12-07 Micron Technology, Inc. Electrically programmable photolithography mask
US6312854B1 (en) 1998-03-17 2001-11-06 Asml Masktools Netherlands B.V. Method of patterning sub-0.25 lambda line features with high transmission, “attenuated” phase shift masks
US6077633A (en) * 1998-12-14 2000-06-20 Taiwan Semiconductor Manufacturing Company Mask and method of forming a mask for avoiding side lobe problems in forming contact holes
US6297166B1 (en) 1999-04-22 2001-10-02 International Business Machines Corporation Method for modifying nested to isolated offsets
US6458493B2 (en) 1999-06-04 2002-10-01 International Business Machines Corporation Method to control nested to isolated line printing
US6569574B2 (en) * 1999-10-18 2003-05-27 Micron Technology, Inc. Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
AU2001241496A1 (en) * 2000-02-14 2001-08-27 Asml Masktools B.V. A method of improving photomask geometry
US6441883B1 (en) * 2000-03-06 2002-08-27 Promos Technologies Inc. Method and apparatus to reduce bias between dense and sparse photoresist patterns
US6335130B1 (en) 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
TW512424B (en) 2000-05-01 2002-12-01 Asml Masktools Bv Hybrid phase-shift mask
JP4719957B2 (ja) 2000-05-24 2011-07-06 株式会社日立製作所 記憶制御装置及び記憶システム並びに記憶システムのセキュリティ設定方法
KR100428884B1 (ko) 2000-06-13 2004-04-28 에이에스엠엘 마스크툴즈 비.브이. 가변치수를 갖는 세리프를 이용하는 광근접 보정방법
JP3425414B2 (ja) * 2000-08-30 2003-07-14 株式会社東芝 マスクの製造方法
US6379849B1 (en) 2000-10-26 2002-04-30 Taiwan Semiconductor Manufacturing Company Method for forming binary intensity masks
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
EP1235103B1 (fr) * 2001-02-27 2007-04-18 ASML Netherlands B.V. Méthode de correction de l'effet de proximité au moyen de structures auxiliaires non résolues à transmissivité partielle
TW571571B (en) 2001-03-14 2004-01-11 Asml Masktools Bv An optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features
US6551750B2 (en) 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US7022436B2 (en) 2003-01-14 2006-04-04 Asml Netherlands B.V. Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects
US7355673B2 (en) * 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
US7355681B2 (en) * 2004-04-09 2008-04-08 Asml Masktools B.V. Optical proximity correction using chamfers and rounding at corners
US7838173B2 (en) * 2006-12-01 2010-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Structure design and fabrication on photomask for contact hole manufacturing process window enhancement
US7771903B2 (en) * 2008-05-28 2010-08-10 Promos Technologies Pte. Ltd. Photolithography with optical masks having more transparent features surrounded by less transparent features
US20100068658A1 (en) * 2008-09-18 2010-03-18 ProMOST Technologies Pte.Ltd. Photolithographic patterning of arrays of pillars having widths and lengths below the exposure wavelengths
KR20150028109A (ko) * 2013-09-05 2015-03-13 삼성디스플레이 주식회사 노광용 마스크, 이의 제조방법 및 이를 이용한 표시패널의 제조방법

Citations (3)

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Publication number Priority date Publication date Assignee Title
US4415262A (en) * 1981-01-21 1983-11-15 Hitachi, Ltd. Photomask
EP0097831A2 (fr) * 1982-06-30 1984-01-11 International Business Machines Corporation Appareil pour la projection optique et procédé pour la fabrication d'images optiques
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator

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US3743842A (en) * 1972-01-14 1973-07-03 Massachusetts Inst Technology Soft x-ray lithographic apparatus and process
US4360586A (en) * 1979-05-29 1982-11-23 Massachusetts Institute Of Technology Spatial period division exposing
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法

Patent Citations (3)

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US4415262A (en) * 1981-01-21 1983-11-15 Hitachi, Ltd. Photomask
EP0097831A2 (fr) * 1982-06-30 1984-01-11 International Business Machines Corporation Appareil pour la projection optique et procédé pour la fabrication d'images optiques
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator

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"PHASE-SHIFT MASK UTILIZING SILICON OXY-NITRIDE AS A LOW REFLECTIVITY PHASE-SHIFT LAYER.", IBM TECHNICAL DISCLOSURE BULLETIN, INTERNATIONAL BUSINESS MACHINES CORP. (THORNWOOD), US, vol. 34., no. 10B., 1 March 1992 (1992-03-01), US, pages 360 - 361., XP000302763, ISSN: 0018-8689 *
"SI-N ATTENUATED PHASE SHIFT LAYER FOR PHASE SHIFT MASK APPLICATION.", IBM TECHNICAL DISCLOSURE BULLETIN, INTERNATIONAL BUSINESS MACHINES CORP. (THORNWOOD), US, vol. 35., no. 03., 1 August 1992 (1992-08-01), US, pages 440 - 441., XP000326336, ISSN: 0018-8689 *
HIDEYUKI JINBO, YOSHIO YAMASHITA: "IMPROVEMENT OF PHASE-SHIFTER EDGE LINE MASK METHOD.", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 30., no. 11B PART 01., 1 November 1991 (1991-11-01), JP, pages 2998 - 3003., XP000263404, ISSN: 0021-4922, DOI: 10.1143/JJAP.30.2998 *
LIN B. J.: "THE ATTENUATED PHASE-SHIFTING MASK.", SOLID STATE TECHNOLOGY., PENNWELL CORPORATION, TULSA, OK., US, vol. 35., no. 01., 1 January 1992 (1992-01-01), US, pages 43 - 47., XP000249146, ISSN: 0038-111X, DOI: 10.1016/0038-1101(92)90301-R *
TSUNEO TERASAWA, ET AL.: "IMAGING CHARACTERISTICS OF MULTI-PHASE-SHIFTING AND HALFTONE PHASE-SHIFTING MASKS.", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 30., no. 11B PART 01., 1 November 1991 (1991-11-01), JP, pages 2991 - 2997., XP000263403, ISSN: 0021-4922, DOI: 10.1143/JJAP.30.2991 *

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5853922A (en) * 1993-10-18 1998-12-29 Mitsubishi Denki Kabushiki Kaisha Phase shifting mask, manufacturing method thereof, and exposure method using such a phase shifting mask
US5536602A (en) * 1993-10-18 1996-07-16 Mitsubishi Denki Kabushiki Kaisha Phase shifting mask, manufacturing method thereof, and exposure method using such a phase shifting mask
EP0650090A1 (fr) * 1993-10-18 1995-04-26 Mitsubishi Denki Kabushiki Kaisha Masque à décalage de phase, méthode de fabrication et méthode d'exposition utilisant un tel masque à décalage de phase
US5698348A (en) * 1993-10-18 1997-12-16 Mitsubishi Denki Kabushiki Kaisha Phase shifting mask, manufacturing method thereof, and exposure method using such a phase shifting mask
US5858625A (en) * 1993-10-18 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Phase shifting mask, manufacturing method thereof, and exposure method using such a phase shifting mask
DE19503393A1 (de) * 1994-02-03 1995-08-17 Hyundai Electronics Ind Halbton-Phasenschiebermaske und Verfahren zur Herstellung derselben
DE19503393C2 (de) * 1994-02-03 1999-12-16 Hyundai Electronics Ind Halbton-Phasenschiebermaske und Verfahren zur Herstellung derselben
EP0708367A1 (fr) * 1994-10-20 1996-04-24 AT&T Corp. Appareil pour décrire des motifs pour utilisation dans le domaine ultra-violet extrême
EP0713142A2 (fr) * 1994-11-17 1996-05-22 International Business Machines Corporation Structure de masque à décalage de phase atténué et alterné en combinaison ainsi que procédés pour sa fabrication
EP0713142A3 (fr) * 1994-11-17 1997-04-09 Ibm Structure de masque à décalage de phase atténué et alterné en combinaison ainsi que procédés pour sa fabrication
EP0766138A2 (fr) * 1995-09-27 1997-04-02 AT&T Corp. Couche de spin-on-glass comme masque de corrodage à sec pour la fabrication d'un masque métallique au moyen d'un procédé à deux couches
EP0766138A3 (fr) * 1995-09-27 1998-11-04 AT&T Corp. Couche de spin-on-glass comme masque de corrodage à sec pour la fabrication d'un masque métallique au moyen d'un procédé à deux couches
US5897977A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
WO1997044710A1 (fr) * 1996-05-20 1997-11-27 E.I. Du Pont De Nemours And Company Plaques d'attenuation integrees pour photomasques avec effet de dephasage
KR100503833B1 (ko) * 1996-05-20 2005-12-21 토판 포토마스크스, 인크. 광감쇠식내장형위상시프트포토마스크블랭크
CN1311292C (zh) * 1996-05-20 2007-04-18 杜邦光掩公司 衰减镶嵌相移光掩模空白片
WO2002044812A2 (fr) * 2000-12-01 2002-06-06 Unaxis Usa Inc. Masque a decalage de phase attenue integre et procede de fabrication d'un masque a decalage de phase attenue integre
WO2002044812A3 (fr) * 2000-12-01 2003-07-17 Unaxis Usa Inc Masque a decalage de phase attenue integre et procede de fabrication d'un masque a decalage de phase attenue integre
WO2004021081A2 (fr) * 2002-08-14 2004-03-11 Infineon Technologies Ag Procede pour produire un masque de phase
WO2004021081A3 (fr) * 2002-08-14 2004-10-21 Infineon Technologies Ag Procede pour produire un masque de phase
US7462426B2 (en) 2002-08-14 2008-12-09 Infineon Technologies Ag Method for producing a phase mask

Also Published As

Publication number Publication date
EP0567169B1 (fr) 2004-01-21
JP2642034B2 (ja) 1997-08-20
DE69333393D1 (de) 2004-02-26
JPH0695359A (ja) 1994-04-08
US5288569A (en) 1994-02-22
DE69333393T2 (de) 2004-12-09

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