EP0563247A1 - Photodefinable interlevel dielectrics - Google Patents
Photodefinable interlevel dielectricsInfo
- Publication number
- EP0563247A1 EP0563247A1 EP92902902A EP92902902A EP0563247A1 EP 0563247 A1 EP0563247 A1 EP 0563247A1 EP 92902902 A EP92902902 A EP 92902902A EP 92902902 A EP92902902 A EP 92902902A EP 0563247 A1 EP0563247 A1 EP 0563247A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- carbon atoms
- coating
- prepolymer
- stpcdp
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/02—Ethers
- C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
- C07C43/215—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/60—Ring systems containing bridged rings containing three rings containing at least one ring with less than six members
- C07C2603/66—Ring systems containing bridged rings containing three rings containing at least one ring with less than six members containing five-membered rings
- C07C2603/68—Dicyclopentadienes; Hydrogenated dicyclopentadienes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Definitions
- This invention relates to materials used to provide isolation of conductive layers in microelectronic circuitry.
- it relates to polymeric materials which can be photopolymerized so that dielectric layers can be formed where desired in multilayer structures.
- Such layers must be excellent insulators, have good chemical resistance and, of course, must adhere to the substrate on which they are placed.
- Polyimides have been used for such dielectrics since they have superior temperature and chemical resistance compared to many other polymers.
- Literature and patents disclosing of the use of polyimides are extensively discussed in U. S. Patent 4,908,096 by one of the present inventors.
- the disadvantages of the polyimides are discussed, namely, that they release large amounts of volatiles during curing, absorb moisture, have poor adhesion, and have a relatively high coefficient of expansion.
- the patent discloses and claims the use of other polymers as interlevel dielectrics having improved properties, namely, vinyl benzyl or alkyl ethers of the condensation products of dialdehydes and phenols.
- the present invention relates to other polymers which have been found to provide useful interlevel dielectrics.
- thermosetting resins which are vinylbenzyl ethers of the reaction product of a dicyclopentadiene with a phenol and which have application to making laminated boards for electronic applications.
- U.S. Pat. No. 4,816,498 another family of oligomeric condensation products was disclosed which differ from those just discussed in being the condensation products of dialdehydes with 3 to 4 moles of phenols.
- Such oligomers also are etherified to provide a mixture of vinylbenzyl and alkyl ethers. They may be used to make laminated boards for electronic applications.
- Such resins have been found to be useful as precursors for polymers for interlevel dielectrics, as will be seen in the discussion below.
- This invention comprises a method of forming a predetermined pattern from a polymer on a substrate and the thus-created dielectric layers which may be used in an electronic interconnect structure.
- Such patterns are created by coating onto the substrate a prepolymer and then irradiating the exposed portions of a masking pattern to render the prepolymer insoluble, then selectively dissolving the nonirradiated masked portions of the coating leaving the insoluble irradiated prepolymer, and curing the irradiated prepolymer to form an infusible glassy solid in the predetermined pattern.
- the prepolymer is either the first of two oligomers described below or is a mixture of both of the oligomers.
- One is a vinylbenzyl ether of the reaction product of a dicyclopentadiene with a phenol, the reaction product having the formula
- R 1 , R 2 H or alkyl of 1-10 carbon atoms
- R 3 methyl
- R 1 H
- A H, an alkyl moiety containing 1 to 10 carbon atoms to, a cycloalkyl moiety having 5 to 10 carbon atoms, or benzyl, subject to the constraint that at least 50% of all A's are the vinyl benzyl moiety;
- R 5 H, an alkyl moiety of 1-10 carbon atoms, a halogen or alkoxy moiety, or a monovalent aromatic radical.
- 70% of A's are vinyl benzyl and the remaining A's are propyl.
- the prepolymers used in forming a pattern have the formula
- R 1 , R 2 H or alkyl of 1-10 carbon atoms ;
- R 3 methyl
- A H, an alkyl moiety containing 1
- R 5 H, an alkyl moiety of 1-10 carbon atoms, a halogen or alkoxy moiety, or a monovalent aromatic radical.
- the dicyclopentadiene portion can be substituted in either ring.
- R 1 and R 2 usually are hydrogen, that is, an unsubstituted dicyclopentadiene is preferred in the practice of this invention but each of R 1 and R 2 can be an alkyl group, preferably a primary alkyl group, containing up to about 10 carbon atoms.
- the lower alkyl groups such as methyl, ethyl, propyl, and butyl, are especially preferred where the dicyclopentadiene is substituted.
- Substitution can be at any position of the dicyclopentadiene ring system but it is preferred that R 1 be at a carbon of the 5-member ring not bonded to the aryl group, and that R 2 is at the bridge or bridgehead carbon of the bicyclic ring portion.
- the phenolic termini of our resins as well as the phenolic portion of P or Q may be substituted by a methyl group or a halogen atom.
- a methyl group is at a position meta or para to the position bearing the oxygen atom.
- a para-substituted phenol is preferred in the practice of this invention because such a mixture tends to afford an amorphous resin, which is a beneficial feature, and is susceptible to photochemical curing.
- the basic resins also can be readily modified to be flame retardant by incorporating halogen atoms into the aromatic rings.
- L may be a halogen atom, especially bromine, and where the aromatic ring is halogenated a is 0, 1 or 2 and b is 0 or 1.
- Polyhalogenated materials are desired as flame retardants, which means that a and b are recommended to be maximized. Where the aromatic rings are not halogen substituted then both a and b are 0.
- the fragments P and Q are subunits of the adduct.
- the adduct is an oligomer it may be a head-to-head, head-to-tail, or completely or partially random arrangement.
- oligomers are formed they are of relatively low molecular weight.
- the variables m, n, s, and t each are integers such that z, where z equals m + n + S + t, is an integer from 1 to 10, and usually is up to about 5, with z being 3 or 4 preferred in the practice of our invention.
- the phenolic hydroxyls in the adduct are capped so as to be converted to ethers. At least 80% of the phenolic groups are so capped, and it is desirable that at least 90%, and even more desirable that at least 95%, of the phenolic groups be capped. Stated differently, in the formula above less than about 20% of the A moieties are hydrogen, and desirably less than 10%, even more desirably less than 5%, are hydrogen.
- A is a vinylbenzyl moiety, that is, of the structure where the vinyl group is either meta or para to the CH 2 , where R 5 is hydrogen, and which usually is a mixture of the meta- and para-isomers.
- R 5 is a chemically inert substituent selected from the group consisting of hydrogen, alkyl moieties containing from 1 to about 10 carbon atoms, the halogens, alkoxy moieties containing from 1 to about 10 carbon atoms, and monovalent radicals whose parent is an aromatic hydrocarbon.
- A is an alkyl group containing from 1 to 10 carbons, a cycloalkyl group having 5 to 10 carbons, or a benzyl group.
- A is an alkyl group
- the primary alkyl groups are given priority, especially the primary lower alkyl groups containing from 1 to 4 carbon atoms.
- the most desirable alkyl groups consist of methyl, ethyl, 1-propyl, 1-butyl, and 2-methyl-1-propyl.
- alkyl groups are represented by 1-pentyl, 1-hexyl, 1-heptyl, 1-octyl, 1-nonyl, 1-decyl, 2-methyl-1-butyl, 3-methyl-1-butyl, 2,3-dimethyl-1-butyl, 3,3-dimethyl-l-butyl, 2-methyl-1-pentyl, and so forth.
- a benzyl group also operates quite satisfactorily in the practice of our invention.
- the most common cycloalkyl groups used in our invention are 5- and 6-membered cycloalkanes, unsubstituted or alkyl substituted so as to contain 5 to 10 carbon atoms.
- Examples are cyclopentyl, cyclohexyl, methylcyclopentyl, dimethylcyclopentyl, ethylcyclopentyl, propylcyclopentyl, butylcyclopentyl, pentylcyclopentyl, ethylmethylcyclopentyl, methylpropylcyclopentyl, butylmethylcyclopentyl, methylcyclohexyl, dimethylcyclohexyl, ethylcyclohexyl, propylcyclohexyl, butylcyclohexyl, and so forth.
- the 1-propyl group is an especially desirable alternative to the vinylbenzyl moiety, and resins where less than 5% of the A groups are hydrogen with the remainder being vinylbenzyl or 1-propyl in a ratio from 1.1:1 to about 6:1 are highly recommended.
- A is at least 70% vinyl benzyl and the remaining A's are propyls.
- the appended vinyl groups are readily crosslinked in a curing step effected by thermal, chemical, or radiative means.
- Thermal curing is generally done in the temperature range between about 100 and about 300oC, and in practice at a temperature between about 150 and about 200oC for 0.5-5 hours with post curing at about 180-300oC for about 0.5 -24 hours.
- Curing also may be brought about using a free radical initiator, such as azo-bis-isobutylronitrile, benzoyl peroxide, di-t-butyl peroxide, etc. Curing may be effected as well as irradiation, especially by visible and ultraviolet light in the presence of a suitable photoinitiator or sensitizer. Whether thermal, chemical, or photochemical curing is performed, the resin becomes extensively crosslinked and sets to an infusible, insoluble glassy solid.
- the resins of this invention may be prepared by an convenient method known in the art. However, they are most readily prepared by reacting a vinylbenzyl halide with the dicyclopentadiene-phenol adduct in a basic solution. Generally a mixture of the meta- and para-isomers of vinylbenzyl chloride are used, although the bromide and, to a lesser extent, the iodide also may be used. The reaction may be conveniently performed in an alcoholic potassium hydroxide solution, often containing acetone, N- methylpyrrolidone, or some other organic cosolvent, at the reflux temperature.
- A alkyl, cycloalkyl, or benzyl moieties these may be prepared by reacting a suitable alkyl, cycloalkyl, or benzyl halide with a partially vinylbenzyl end-capped adduct, or by reacting the uncapped adduct with a mixture of halides.
- the second type of oligomers are ethers of oligomeric condensation products of 1 molar proportion of certain dialdehydes with from about 3 to about 4 molar proportions of a phenol. More particularly, the ether moiety is randomly selected from among the vinylbenzyl moiety, alkyl moieties containing from 1 to 10 carbon atoms, cycloalkyl moieties having from 5 to about 10 carbon atoms, and the benzyl moiety, where the ratio of the vinylbenzyl to other ether moieties is at least 1:1 and may be as great as 6:1.
- the phenolic oligomers are the condensation products of 1 molar proportions of selected dialdehydes with 3 to 4 molar proportions of a phenol. Although more than 4 molar proportions of a phenol can be used in the practice of this invention, no more than 4 molar proportions will react with the dialdehydes.
- dialdehydes which may be used in this invention are the linear, terminal alkylene dialdehydes of formula OHC(CH 2 ) r CHO where r is 0 or an integer from 1 to 6.
- Such dialdehydes include glyoxal, malondialdehyde, succinidialdehyde, glutaraldehyde, adiphaldehyde, pimelaldehyde, and sebacaldehyde.
- aldehydes which may be employed in preparation of the oligomeric condensation products include cyclopentanedialdehyde, phthalaldehyde, isophthaldehyde, terephthalaldehyde, the hexahydrophthalaldehydes (i.e., the reduced counterpart of the phthalaldehydes where the aromatic ring has been reduced to a cyclohexane ring), cycloheptanedialdehyde, and cyclooctanedialdehyde.
- the oligomers are the condensation product of 1 molar proportion of the aforementioned dialdehydes with from 3 to about 4 molar proportions of a phenol.
- the phenol has the general structure R 6 C 6 H 4 OH where R 6 is hydrogen or an alkyl group containing from 1 through about 8 carbon atoms.
- R 6 is hydrogen or an alkyl group containing from 1 through about 8 carbon atoms.
- the most desirable phenol is phenol itself, that is, the case where R 6 is hydrogen.
- R 6 is an alkyl group it is most desirable that the alkyl group contain from 1 to about 4 carbon atoms, and cresol, the case where R 6 is a methyl group is another preferred species of phenol.
- the condensation product is analogous to phenol-formaldehyde resins. That is, the products result from the condensation of 2 molar proportions of a phenol with each aldehyde group.
- the product In the simplest case, which can be looked as the "monomeric" product, using phenol and glyoxal to exemplify the reaction, the product has the structure
- the product above has 4 phenolic groups per molecule, and any one of these may react with another molecule of glyoxal which then further condenses with three other molecules of phenol to give the structure
- the oligomeric product above results from a molar proportion of 7 phenols to 2 glyoxals. This oligomer in turn can react with another molecule of glyoxal and the latter can react further with 3 additional phenols to give the next higher oligomer of the structure
- the condensation products are themselves phenols, as mentioned above, and are a mixture of oligomers. This mixture can be characterized by the number of phenolic moieties per molecule. We are concerned with those condensation products which have from 4 to about 60 phenolic moieties per molecule, and more usually between four and about 22 phenolic moieties per molecule.
- the product being a mixture of oligomers, the preferred mixture is characterized by having as an average between about 5 and about 8 phenolic moieties per molecule.
- each oligomeric product has a molecular weight between about 400 and 6000, and more desirably between about 400 and about 2200.
- the mixture of oligomeric products may be characterized by an average molecular weight of between about 500 and about 800.
- the interlevel dielectric resins of this invention are ethers of the aforedescribed oligomeric condensation products.
- the phenolic condensation products are halogenated prior to ether formation in order to make the final resins more flame retardant. Increased flame retardancy occurs especially when the halogen is chlorine or bromine, and the use of a brominated product is preferred.
- the halogen is introduced into positions ortho and para to the phenolic hydroxyl group. If all of the ortho and para positions are available a maximum of three halogen atoms per phenolic moiety may be introduced. Often it is desirable to prepare the maximally halogenated oligomeric condensation product, although at times a halogen content less than the maximum is advantageous.
- ether moieties are randomly selected from the group consisting of vinylbenzyl, alkyl containing 1 to 10 carbon atoms, cycloalkyl of from 5 to 10 carbon atoms, and benzyl moieties as described above with respect to the first type of oligomer where the ratio of the vinylbenzyl to all other ether moieties is at least 1:1 and may be as high as 6:1.
- the prepolymers may be prepared by acid catalyzed condensation of phenols with dialdehydes followed by end-capping substantially all the phenolic hydroxyls by converting them to ethers. Acid catalyzed condensation is preferred to avoid the formation of terminal hydroxyl methylene groups, -CH 2 OH. End-capping by ether formation can be effected by any suitable means, such as by reacting the phenolic condensation product with an alkyl or benzyl halide in a basic medium.
- the resulting interlevel dielectric oligomers may be polymerized with attendant crosslinking by a variety of curing means.
- curing When curing is effected by thermal means, it generally is autoinitiated by heating the oligomer resin in air at a temperature between about 100 and 300oC, and more particularly between about 120 and 200°C. Curing also may be brought about by chemical means using a free radical initiator such as azo-bis-isobutyronitrile, benzoyl peroxide, di-t-butyl peroxide, etc.
- curing is begun by irradiation, especially by visible and ultraviolet light in the presence or absence of a suitable photoinitiator or sensitizer, followed by thermal curing to produce an infusible, insoluble glassy solid.
- the oligomers may be used as a passivant, as an interlevel dielectric, as a means of providing device deep dielectric isolation (insulator isolating trenches), as a high temperature solder mask, a photoresist, etc. Although much of what follows describes its use primarily as an interlevel dielectric, the skilled worker will recognize from this description how to use the materials of this invention in other applications as well.
- the oligomers are applied as a coating to a suitable substrate.
- the substrates used will be a silicon wafer, a silicon chip of an integrated circuit, a printed circuit board or a ceramic substrate.
- the photosensitive oligomers may be applied by spin coating, spray coating, by use of a doctor knife, or any other conventional techniques known in the art to obtain a uniform coating. Where the viscosity is too high, a solution of the resin in a suitable solvent may be used.
- the oligomers are soluble in a broad class of solvents including polar aprotic solvents, aromatic hydrocarbons, halogenated hydrocarbons, ketones, ester, and so forth.
- solvent examples include dimethylformamide (DMF), hexamethylphosphoramide (HMPA), N-methylacetamide (NMAc), dimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), benzene, toluene, xylene, dichloromethane, chloroform, carbon tetrachloride, chlorobenzene, tetrachloroethane, tetrachloroethylene, trichloroethane, gamma-butyrolactone, methyl ethyl ketone, diethyl ketone, hexanone, heptanone, octanone, methyl acetate, ethyl acetate, methoxy ethanol, ethoxy ethanol, and so forth.
- DMF dimethylformamide
- HMPA hexamethylphosphoramide
- NMAc N-methylacetamide
- DMSO dimethylsulfoxide
- NMP
- the solvent should be unreactive with both the substrate and the photosensitive oligomers and able to dissolve the resins to provide at least about a 10 weight-volume percent solution. Since the solvent is typically removed prior to further processing, it is also preferable that as low boiling a solvent as possible be used consistent with the foregoing considerations.
- the oligomers may be photopolymerized directly, a photosensitizer or photoinitiator may be used and may be useful to decrease irradiation time. Where a photosensitizer or photoinitiator is used it will be added with the oligomers at the coating stage and will be present in an amount from about 0.001 to about 5.0 weight percent relative to the oligomerics.
- photosensitizers or photoinitiators which may be successively used in the practice of this invention include such materials as benzophenone, 4,4'-bis(dimethylamino)benzophenone, xanthone, acetophenone, 4-trifluoromethyl-acetophenone, triphenylene, thioxanthone, anthraquinone, 4-phenylbenzophenone, naphthalene, 2-acetonaphthalene, 1-acetonaphthalene, chrysene, anthracene, 9,10-dichloroanthracene, pyrene, triphenylene, 1-fluoronaphthalene, 1-chloronaphthalene, 1-bromonaphthalene, 1-iodonaphthalene, 1,3-dicyanobenzene, dimethyl isophthalate, diethyl isophthalate, methyl 3-cyano-benzoate, ethyl 3-cyano-benzoate, phen
- Preferred sensitizers include benzophenone, 4,4'-bis(dimethylamino)benzophenone, 1,3-dicyanobenzene, dimethyl isophthalate, diethyl isophahalate, methyl 3-cyano-benzoate, and phenyl 3-cyano-benzoate.
- the solvent used must be removed prior to irradiation. Consequently, it is conventional to heat the coated substrate for a time sufficient to remove essentially all of the solvent present, if any, prior to irradiation, a stage known as the "softbake.” It is for this reason that the use of a low boiling solvent is preferred. It is acceptable to use enough heat to provide a semicured coating, especially since the oligomers may begin to cure at temperatures as low as about 110oC.
- the softbake can be carried out in vacuum, under an inert atmosphere (e.g., nitrogen, helium, argon, etc.) or in air.
- a mask containing the desired pattern or image is placed on or adjacent to the coated substrate and the oligomeric coating is then irradiated through the mask by x-ray, electron beam, ion beam, ultraviolet, or visible radiation.
- radiation in the range from about 200 to about 800 nanometers. Since lower wave length radiation tends to afford better resolution, irradiation in the 200-500 nm range is preferred. With this treatment the irradiated portion of the coating becomes crosslinked so that the photocrosslinked oligomer is rather insoluble in the same solvent in which the original photosensitive oligomers remain quite soluble.
- Irradiation may be done in either the presence or absence of oxygen. Exposure time necessary for adequate photocrosslinking to afford the differential solubility characteristic sought depends upon the wavelength of the light used, its intensity, the presence or absence of a photosensitizer or photoinitiator, and so forth, with a variation from a few seconds up through several minutes. For production purposes the shorter exposure times are highly preferred.
- One desirable characteristic of the photosensitive oligomers of this invention is that: they photochemically crosslink throughout the thickness of the film, and therefore the pattern shows minimal undercutting upon development.
- the selective pattern appears upon development with the solvent.
- the photosensitive oligomeric resin becomes extensively crosslinked with a subsequent large differential solubility between the crosslinked, or irradiated, and non-crosslinked, or non-irradiated, portions of the oligomers.
- the solvents used in the development are in general the same ones used in preparing a solution of the oligomers for coating purposes.
- classes of solvents include aprotic solvents, aromatic hydrocarbons, halogenated hydrocarbons, ketones, esters, the Carbitols, and mixtures thereof.
- curing may first be effected at a temperature between about 150oC and about 200oC for 0.5-5 hours with postcuring at about 180oC-300oC for about 0.5-24 hours.
- Curing also may be brought about using a free radical initiator, such as azo-bis-isobutyronitrile, benzoyl peroxide, di-t-butylperoxide, and so on.
- oligomers of the invention have been found particularly useful in photodefinable applications since they may be coated as solutions with high solids levels and thus less solvent must be evaporated. Also, since no volatile by-products are generated during curing the shrinkage of the films is minimized.
- the substrate i.e., ceramic, alumina, silicon, printed wiring board, etc.
- the substrate may be cleaned with conventional cleaning solvents (e.g., methylene chloride, chloroform, Genesolv ® , trichloroethylene, ethanol, methanol, sodium bisulfite, sodium sulfite, potassium sulfite, etc.) employing normal cleaning processes as known in the art.
- the substrate may contain circuitry already deposited upon it.
- the substrate may be utilized after the cleaning process or may be surface treated to promote adhesion between the substrate and the metals and/or polymer dielectric layer.
- an adhesion promoter between the substrate and the dielectric layer may be chosen from a range of surface silylating agents containing reactive groups capable of reacting with the polymers of the invention.
- surface silylating agents which can be employed are: vinylmethyldimethoxysilane, vinyltrimethoxysilane, vinylmethyldiethoxysilane, vinyltriethoxysilane, diethoxymethylvinylphenethylsilane, dimethoxymethylvinylphenethylsilane, t r i ethoxyv iny lph e n ethy l s i a n e , trimethoxyvinylphenethylsilane, etc.
- Preferred silylating agents are vinylmethyldimethoxysilane, v i n y l m e t h y l d i e t h o x y s i l a n e , diethoxymethylvinylphenethylsilane, and dimethoxymethylvinylphenethylsilane.
- the surface silylating agent would be applied to the substrate via dipping, spin coating, or other techniques from an alcohol-water solution.
- a 1 to 10 wt.% solution of the silylating agent is dissolved in 85 to 98 wt.% of alcohol (e.g., methanol, ethanol, isopropanol, etc.) and 1 to 13 wt.% of water.
- alcohol e.g., methanol, ethanol, isopropanol, etc.
- the substrate is dipped in this solution for 15 seconds to 5 minutes, air dried for 1 minute to 5 hours, and then soft baked for 1 minute to 5 hours at 60 to 100oC either in a convection oven, vacuum oven or hot plate.
- the cleaned and/or surface treated substrate will be covered with a metal pattern before being covered with the dielectric layer of the invention.
- a metal pattern For example, a 500 to 1000 A layer of chromium, 8000 to 20000 A layer of copper and a 500 to 1000 A layer of chromium may be sputtered onto the surface.
- the metal layer is coated with a commercial photoresist and processed according to the recommended processing scheme utilizing a spin coat, soft bake, imaging, developing, and hard bake cycle. This exposes portions of the metal layer to be removed by etching to create the pattern.
- the metals are etched utilizing standard wet techniques, for example: The top chromium layer is etched with a 1 to 30 % hydrochloric acid solution activated with aluminum for 10 seconds to 5 minutes; the copper layer is etched with a sodium persulfate solution for 10 seconds to 10 minutes; the bottom chromium layer is etched with a 1 to 30 % hydrochloric acid solution activated with aluminum for 10 seconds to 5 minutes; and finally the etched substrate is washed with deionized water for 10 to 60 seconds. Then the remaining photoresist is stripped from the metal pattern as per the processing technique recommended for the photoresist. Finally the cleaned substrate is dried prior to the next processing step.
- the dielectric layer is coated onto the substrate and its metal pattern and processed as follows:
- the prepolymer e.g., 10 to 80 wt. %) solution in an appropriate solvent (toluene, NMP, DMF, etc.) is spin coated onto the substrate at a speed of 500 to 2500 rpm for 30 to 90 seconds;
- the prepolymer coated substrate is soft baked at a temperature of 25 to 60oC for 15 minutes to 24 hours in a vacuum oven with or without a nitrogen bleed;
- the soft-baked coating is then imaged with a UV light source (220-320 nm range) for 15 seconds to 30 minutes employing a mask of desired design for vias and the like;
- the photocured polymer is then developed with an appropriate solvent system (e.g., toluene, toluene/hexane, toluene/ethanol, cyclohexane, etc.) at 25 to 35o C with or without ultrasonics or via spraying for 15 to 120 seconds
- the process is repeated as required in order to form an electronic interconnect structure of desired electrical and dielectric levels.
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- the reaction mixture was heated to 60oC and 52.78 g (0.941 moles) of potassium hydroxide in 125 mL of methanol was added dropwise over a 30 minute interval. The reaction was maintained at 60° C for 16 hrs with stirring under a nitrogen purge. To this reaction mixture was added 31.32 g (0.254 moles) of n-propylbromide and then 15.34 g (0.273 moles) of potassium hydroxide in 80 mL of methanol over a 1 hr. interval. The reaction was maintained at 60°C for 3.5 hours and then allowed to cool to room temperature.
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- the reaction mixture was heated to 60°C and 131.95 g (2.35 moles) of potassium hydroxide in 312 mL of methanol was added dropwise over a 6.0 hrs. interval. The reaction was maintained at 60oC for 16 hrs. with stirring under a nitrogen purge. To this reaction mixture was added 78.30 g (0.637 moles) of n-propylbromide, and then added 38.35 g (0.630 moles) of potassium hydroxide in 200 mL of methanol over a 20 minute interval. The reaction was maintained at 60oC for 3.5 hours and then allowed to cool to room temperature.
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- PCDP para-cresol dicyclopentadiene
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- the reaction mixture was heated to 60oC and 84.05 g (1.498 moles) of potassium hydroxide in 200 mL of methanol was added dropwise over a 3 hour interval. The reaction was maintained at 60oC for 16 hrs with stirring under a nitrogen purge. To this reaction mixture was added 49.88 g (0.406 moles) of n-propylbromide, and then 24.43 g (0.435 moles) of potassium hydroxide in 125 mL of methanol added over a 2 hour interval. The reaction was maintained at 60oC for 4 hours and then allowed to cool to room temperature.
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- the reaction mixture was heated to 60oC and 106.0 g (1.890 moles) of potassium hydroxide in 250 mL of methanol was added dropwise over a 2.5 hour interval. The reaction was maintained at 60°C for 16 hrs with stirring under a nitrogen purge. To this reaction mixture was added 102.0 g (0.829 moles) of n-propylbromide was added to the reaction mixture and heated with stirring under purge to 60oC. To this reaction mixture was then added 35.4 g (0.631 moles) of potassium hydroxide in 120 mL of methanol over a 1.5 hour interval. The reaction was maintained at 60oC for 3 hours and then allowed to cool to room temperature.
- PCDP para-cresol dicyclopentadiene
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- the reaction mixture was heated to 60oC and 147.4 g (2.627 moles) of potassium hydroxide in 325 mL of methanol was added dropwise over a 2 hour interval. The reaction was maintained at 60oC for 6 hrs with stirring under a nitrogen purge. To this reaction mixture was added 157.0 g (1.276 moles) of n-propylbromide, and then 71.82 g (1.280 moles) of potassium hydroxide in 165 mL of methanol was added over a 2 hour interval. The reaction was maintained at 60oC for 4 hours and then allowed to cool to room temperature.
- PCDP para-cresol dicyclopentadiene
- reaction mixture was added 71.12 g (0.538 moles) of dicyclopentadiene over a 45 minute interval, the reaction was maintained at 60oC with stirring during the addition; then the reaction was heated to 150oC for 4 hours, and then cooled to ambient temperature.
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- the reaction mixture was heated to 60oC and 76.82 g (1.370 moles) of potassium hydroxide in 225 mL of methanol was added dropwise over a 1.75 hour interval. The reaction was maintained at 60oC for 4.2 hrs with stirring under a nitrogen purge. To this reaction mixture was added 78.83 g (0.640 moles) of n-propylbromide, and then 35.91 g (0.640 moles) of potassium hydroxide in 125 mL of methanol added over a 2.0 hour interval. The reaction was maintained at 60oC for 16 hours and then allowed to cool to room temperature.
- PCDP Borden Chemical
- the reaction mixture was heated to 60oC under nitrogen with stirring; after complete dissolution of PCDP then 1.0 mL (6.83 ⁇ 10 -3 moles) of boron trifluoride etherate was added.
- reaction mixture was added 59.26 g (0.448 moles) of dicyclopentadiene over a 2 hour interval, the reaction was maintained at 60oC with stirring during the addition; then the reaction was heated to 150oC for 4 hours, and then cooled to ambient temperature.
- PCDP para-cresol dicyclopentadiene
- NMP N-methylpyrrolidinone
- BHT 2,6-di-tert-butyl-p-cresol
- the reaction mixture was heated to 60oC and 23.81 g (0.424 moles) of potassium hydroxide in 60 mL of methanol was added dropwise over an 1.2 hour interval. The reaction was maintained at 60oC for 4.0 hrs with stirring under a nitrogen purge. To this reaction mixture was added 40.14 g (0.326 moles) of n-propylbromide, and then added 18.32 g (0.327 moles) of potassium hydroxide in 40 mL of methanol added over an 1 hour interval. The reaction was maintained at 60oC for 4 hours and then allowed to cool to room temperature.
- TPE tetraphenol ethane
- NMP N-methyl pyrollidinone
- VBC vinylbenzyl chloride
- the solution was heated to 60oC by means of a water bath and 11.34 g KOH (0.177 mol) dissolved in 25 mL of methanol were added dropwise over 30 minutes. The mixture was kept at 60oC for an additional 3.5 hours, 9.0 mL 1-bromopropane (0.099 mol) were then added. 4.86 g KOH (0.0758 mol) dissolved in 11 mL methanol were then added dropwise over 30 minutes and the temperature maintained at 50oC an additional 1.5 hours.
- TPE tetraphenol ethane
- VBC VBC
- KOH KOH
- methanol methanol
- the solution was heated to 60oC by a water bath and 101.95 g KOH (1.59 mol) dissolved in 230 mL of methanol were added dropwise over 30 minutes. The mixture was kept at 60°C, for an additional 4.7 hours, 15.17 g VBC (0.0994 mol) were then added. 6.37 g KOH (0.0994 mol) dissolved in 15 mL methanol were then added dropwise. A final identical addition of VBC and KOH/methanol was made 1.7 hours later and the reaction maintained at 60oC for 1 hour longer.
- a series of styrene terminated para-cresol dicyclopentadiene (STPCDP) of Examples 6, 7, 8, 4, and 5 corresponding respectively to Samples 1, 2, 3, 4, and 5 were cured via the following cure cycle 2 hrs at 80-C, 16 hrs. at 100oC, 4 hrs. at 120oC, 16 hrs. at 160 -C, 2 hrs. at 200°C and then 1 hr. at 225°C. Properties of the cured resins are given in the following table.
- a series of coating solutions were prepared and used to coat silicon surfaces.
- the solution concentration was 56 wt. % STPCDP from Example 6 in toluene.
- the solution was applied by spin coating at 950 rpm for 60 seconds.
- the coated discs were soft baked at 25"C for 18 hours under vacuum. Then, they were exposed for 3 minutes to UV irradiation with a 300 watt mercury vapor lamp with a quartz/water filter. The irradiated coatings were then exposed to various solvents and the amount of cured resin dissolved was measured. The results are shown in the following tables.
- Tables B and C may be compared with the results of Tables D and E below in which only the soft bake was carried out and no curing by UV radiation was done.
- STPCDP solutions were prepared using various concentrations of STPCDP of Example 6 in toluene. These solutions were spin coated onto a silicon substrate (surface) utilizing spin coating rates from 600 rpm to 2000 rpm for 60 seconds; soft baked for 24 hours at 25oC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25oC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25oC to 220oC ramp in 1 hour, held at 220oC for 2.5 hours and then cooled to room temperature.
- STPCDP solutions were prepared using various concentrations of STPCDP of Example 6 in toluene. These solutions were spin coated onto a silicon substrate (surface) utilizing spin coating rates from 600 rpm to 2000 rpm for 60 seconds; soft baked for 24 hours at 25oC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25oC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25oC to 220oC ramp in 1 hour, held at 220oC for 2.5 hours and then cooled to room temperature.
- STPCDP solutions were prepared using various concentrations of STPCDP of Example 6 in toluene. These solutions were spin coated onto a silicon substrate (surface) utilizing spin coating rates from 600 rpm to 2000 rpm for 60 seconds; soft baked for 24 hours at 25°C under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25oC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25oC to 220oC ramp in 1 hour, held at 220oC for 2.5 hours and then cooled to room temperature. The samples were then metallized via ion- beam sputtering to yield a metal film of thickness 5000 to 10000 A.
- the adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal shock cycling.
- a thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55°C for 10 minutes, -55°C to 125oC over a rapid ramp, hold at 125oC for 10 minutes.
- the ratio given means that of 25 squares of the metal, some to all of them were not removed by the tape. That is, 25/25 means that all the squares remained adhered to the dielectric polymer while 5/25 means that 20 squares of metal were removed.
- STPCDP resin of Example 5 was dissolved in toluene to yield a solution of composition 47.2% STPCDP and 52.8% toluene. This solution was spin coated onto an alumina or silicon substrate (surface) utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60oC under nitrogen. The polymer was hard baked employing a cure cycle under nitrogen of
- 25oC to 220oC ramp in 3 hour, held at 220°C for 2.0 hours and then ramped from 220oC to 25oC in 4 hours.
- the adhesion was evaluated via a calibrated
- a thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55°C for 10 minutes, -55o C to 125o C over a rapid ramp, hold at 125oC for 10 minutes.
- STPCDP resin of Example 5 was dissolved in toluene to yield a solution of composition 47.2% STPCDP and 52.8% toluene.
- This solution was spin coated onto an alumina substrate (surface) onto which had been ion- sputtered with a metal film of thickness 5000A, utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60oC under nitrogen.
- the polymer was hard baked employing a cure cycle under nitrogen of 25oC to 220oC ramp in 3 hours, held at 220oC for 2.0 hours and then ramped from 220oC to 25oC in 4 hours.
- a thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55oC for 10 minutes, -55oC to 125oC over a rapid ramp, hold at 125oC for 10 minutes.
- STPCDP styrene terminated para-cresol dicyclopentadiene
- STTPE styrene terminated tetraphenol ethane
- Tg ( o C) (a) >300 >300 >300 Tsp ( ° C) (b) 147 ⁇ 3 160 ⁇ 4 161 ⁇ 2 ⁇ sp (ppm/ o C) (c) 75 ⁇ 3 70+9 74 ⁇ 2 ⁇ 260 (ppm/oC) (d) 167+1 110 ⁇ 14 93 ⁇ 2
- a series of coating solutions were prepared and used to coat silicon surfaces.
- the solution concentrations were between 50.8 and 53.1 wt. % STPCDP (Example 5) and STTPE (in Example 9) in toluene.
- the solutions were applied by spin coating at 900-950 rpm for 60 seconds.
- the coated discs were soft baked at 25°C for 18 hours under vacuum. Then, they were exposed for 3 minutes to UV irradiation with a 300 watt mercury vapor lamp with a quartz/water filter. The irradiated coatings were then exposed to various solvents and the amount of cured resin dissolved was measured. The results are shown in the following tables.
- Tables B and C may be compared with the results of Tables D and E below in which only the soft bake was carried out and no curing by UV radiation was done.
- Tables F and G may be compared with the results of Tables H and I below in which only a soft bake was carried out and no curing by UV radiation was done.
- Table J and K may be compared with the results of Tables L and M below in which only the soft bake was carried out and no curing by UV radiation was done.
- a series of 50% STPCDP (Example 6) and 50% STTPE (Example 9) solutions were prepared in toluene were prepared at different concentrations ranging from 46.0 Wt. % solids to 58.4 Wt. % solids. These solutions were spin coated onto a silicon substrate (surface) utilizing spin coating rates from 700 rpm to 1500 rpm for 60 seconds; soft baked for 24 hours at 25oC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25oC.
- the air dried substrate was hard baked employing a cure cycle under vacuum of 25oC to 220oC ramp in 1 hour, held at 220oC for 2.5 hours and then cooled to room temperature.
- the film thickness of the photocured polymer was analyzed employing a Taylor-Hobson Talysurf 10 profilometer. The following table illustrates the film thicknesses obtained.
- a 56 Wt. % solids solution of 50% STPCDP, 50% STTPE solution was prepared in toluene using of STPCDP of Example 6 and STTPE of Example 9. This solution was spin coated onto a silicon substrate (surface) utilizing spin coating rates from 600 rpm to 2000 rpm for 60 seconds; soft baked for 24 hours at 25oC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25oC.
- the air dried substrate was hard baked employing a cure cycle under vacuum of 25°C to 219oC ramp in 1 hour, held at 219oC for 2.5 hours and then cooled to room temperature.
- the film thickness and sidewall angle of the photocured polymer was analyzed utilizing a Sloan Technology Corporation Dektak 3030 profilometer. This data is summarized in the following table.
- a series of 50% STPCDP (Example 6) and 50% STTPE (Example 9) solutions were prepared in toluene were prepared at different concentrations ranging from 46.0 Wt. % solids to 58.4 Wt. % solids. These solutions were spin coated onto a silicon substrate (surface) utilizing spin coating rates from 700 rpm to 1500 rpm for 60 seconds; soft baked for 24 hours at 25o C under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25oC.
- the air dried substrate was hard baked employing a cure cycle under vacuum of 25°C to 220oC ramp in 1 hour, held at 220oC for 2.5 hours and then cooled to room temperature.
- the samples were then metallized via ion-beam sputtering to yield a metal film of thickness 5000 to 10000 A.
- the adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal shock cycling.
- a thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55oC for 10 minutes, -55oC to 125oC over a rapid ramp, hold at 125oC for 10 minutes.
- the ratio given means that of 25 squares of the metal, some to all of them were not removed by the tape. That is, 5/25 means that 20 squares of metal were removed.
- STPCDP resin of Example 5 and STTPE of Example 9 was dissolved in toluene to yield a solution of (50:50 STPCDP:STTPE) composition 28.0 Wt.% STPCDP, 28.0 Wt.% STTPE and 44 Wt.% toluene.
- This solution was spin coated onto an alumina or silicon substrate (surface) utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60°C under nitrogen.
- the polymer was hard baked employing a cure cycle under nitrogen of 25oC to 220oC ramp in 3 hour, held at 220oC for 2.0 hours and then ramped from 220oC to 25°C in 4 hours.
- the adhesion was evaluated via a calibrated
- a thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55oC for 10 minutes, -55°C to 125oC over a rapid ramp, hold at 125oC for 10 minutes.
- STPCDP resin of Example 5 and STTPE of Example 9 was dissolved in toluene to yield a solution of (50:50 STPCDP:STTPE) composition 28.0 Wt.% STPCDP, 28 Wt.% STTPE and 44 Wt.% toluene.
- This solution was spin coated onto an alumina substrate (surface) onto which had been ion-sputtered with a metal film of thickness 5000A, utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60oC under nitrogen.
- the polymer was hard baked employing a cure cycle under nitrogen of 25oC to 220oC ramp in 3 hours, held at 220oC for 2.0 hours and then ramped from 220oC to 25oC in 4 hours.
- the adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal shock cycling.
- a thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55oC for 10 minutes, -55oC to 125oC over a rapid ramp, hold at 125oC for 10 minutes.
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Abstract
On forme une structure prédéterminée d'un polymère diélectrique sur un substrat à partir soit d'un premier prépolymère qui est un éther du produit réactionnel d'un dicyclopentadiène et d'un phénol, soit d'un mélange dudit prépolymère et d'un second prépolymère qui est un éther du produit réactionnel d'un dialdéhyde et de 3 ou 4 moles d'un phénol.A predetermined structure of a dielectric polymer is formed on a substrate from either a first prepolymer which is an ether of the reaction product of a dicyclopentadiene and a phenol, or from a mixture of said prepolymer and a second prepolymer which is an ether of the reaction product of a dialdehyde and 3 or 4 moles of a phenol.
Description
Claims
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US630107 | 1990-12-19 | ||
US07/630,107 US5085886A (en) | 1990-12-19 | 1990-12-19 | Photodefinable interlevel dielectrics |
US630118 | 1990-12-19 | ||
US07/630,118 US5114741A (en) | 1990-12-19 | 1990-12-19 | Photodefinable interlevel dielectrics |
Publications (1)
Publication Number | Publication Date |
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EP0563247A1 true EP0563247A1 (en) | 1993-10-06 |
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EP92902902A Ceased EP0563247A1 (en) | 1990-12-19 | 1991-12-11 | Photodefinable interlevel dielectrics |
Country Status (3)
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EP (1) | EP0563247A1 (en) |
JP (1) | JPH06505101A (en) |
WO (1) | WO1992011580A1 (en) |
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US6908960B2 (en) * | 1999-12-28 | 2005-06-21 | Tdk Corporation | Composite dielectric material, composite dielectric substrate, prepreg, coated metal foil, molded sheet, composite magnetic substrate, substrate, double side metal foil-clad substrate, flame retardant substrate, polyvinylbenzyl ether resin composition, thermosettin |
JP4648695B2 (en) * | 2000-01-31 | 2011-03-09 | 三菱製紙株式会社 | Photosensitive composition and photosensitive lithographic printing plate material |
US7098525B2 (en) | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
US7279777B2 (en) * | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
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US4540829A (en) * | 1982-12-02 | 1985-09-10 | The Dow Chemical Company | Allylated di or polycyclopentadiene diphenols |
US4824920A (en) * | 1986-12-15 | 1989-04-25 | Allied-Signal Inc. | Vinyl-benzyl ethers of phenol-dicyclopentadiene adducts as new thermosetting resins for composites |
US4908096A (en) * | 1988-06-24 | 1990-03-13 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
-
1991
- 1991-12-11 JP JP4503713A patent/JPH06505101A/en active Pending
- 1991-12-11 WO PCT/US1991/009392 patent/WO1992011580A1/en not_active Application Discontinuation
- 1991-12-11 EP EP92902902A patent/EP0563247A1/en not_active Ceased
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