WO1992011578A1 - Photodefinable interlevel dielectrics - Google Patents
Photodefinable interlevel dielectrics Download PDFInfo
- Publication number
- WO1992011578A1 WO1992011578A1 PCT/US1991/009391 US9109391W WO9211578A1 WO 1992011578 A1 WO1992011578 A1 WO 1992011578A1 US 9109391 W US9109391 W US 9109391W WO 9211578 A1 WO9211578 A1 WO 9211578A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coating
- moieties
- carbon atoms
- prepolymer
- reaction mixture
- Prior art date
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- 239000003989 dielectric material Substances 0.000 title description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims abstract description 50
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 229920000642 polymer Polymers 0.000 claims abstract description 34
- 239000007859 condensation product Substances 0.000 claims abstract description 30
- 239000000203 mixture Substances 0.000 claims abstract description 29
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 18
- ZNZYKNKBJPZETN-WELNAUFTSA-N Dialdehyde 11678 Chemical compound N1C2=CC=CC=C2C2=C1[C@H](C[C@H](/C(=C/O)C(=O)OC)[C@@H](C=C)C=O)NCC2 ZNZYKNKBJPZETN-WELNAUFTSA-N 0.000 claims abstract description 7
- -1 vinylbenzyl moiety Chemical group 0.000 claims description 60
- 125000000217 alkyl group Chemical group 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 24
- 125000004432 carbon atom Chemical group C* 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 239000007787 solid Substances 0.000 claims description 15
- 125000001033 ether group Chemical group 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- ZWLUXSQADUDCSB-UHFFFAOYSA-N phthalaldehyde Chemical compound O=CC1=CC=CC=C1C=O ZWLUXSQADUDCSB-UHFFFAOYSA-N 0.000 claims description 4
- IZALUMVGBVKPJD-UHFFFAOYSA-N benzene-1,3-dicarbaldehyde Chemical compound O=CC1=CC=CC(C=O)=C1 IZALUMVGBVKPJD-UHFFFAOYSA-N 0.000 claims description 3
- NPAITWJWQYTNCY-UHFFFAOYSA-N cycloheptane-1,1-dicarbaldehyde Chemical compound O=CC1(C=O)CCCCCC1 NPAITWJWQYTNCY-UHFFFAOYSA-N 0.000 claims description 3
- AOVGTXWIQWMZGB-UHFFFAOYSA-N cyclohexane-1,2-dicarbaldehyde Chemical compound O=CC1CCCCC1C=O AOVGTXWIQWMZGB-UHFFFAOYSA-N 0.000 claims description 3
- SKHNPNDJWVBOIC-UHFFFAOYSA-N cyclooctane-1,1-dicarbaldehyde Chemical compound O=CC1(C=O)CCCCCCC1 SKHNPNDJWVBOIC-UHFFFAOYSA-N 0.000 claims description 3
- LCMKQLYIANNZSD-UHFFFAOYSA-N cyclopentane-1,1-dicarbaldehyde Chemical compound O=CC1(C=O)CCCC1 LCMKQLYIANNZSD-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 claims description 3
- WHKHKMGAZGBKCK-UHFFFAOYSA-N cyclohexane-1,3-dicarbaldehyde Chemical compound O=CC1CCCC(C=O)C1 WHKHKMGAZGBKCK-UHFFFAOYSA-N 0.000 claims description 2
- QWKLKVRIQGSSKF-UHFFFAOYSA-N cyclohexane-1,4-dicarbaldehyde Chemical compound O=CC1CCC(C=O)CC1 QWKLKVRIQGSSKF-UHFFFAOYSA-N 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 195
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 108
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 93
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 86
- 239000011541 reaction mixture Substances 0.000 description 83
- 229920005989 resin Polymers 0.000 description 58
- 239000011347 resin Substances 0.000 description 58
- 239000002904 solvent Substances 0.000 description 54
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 47
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 44
- 229910052757 nitrogen Inorganic materials 0.000 description 43
- 238000006243 chemical reaction Methods 0.000 description 34
- 238000010926 purge Methods 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 30
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 28
- 239000010410 layer Substances 0.000 description 22
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000003756 stirring Methods 0.000 description 19
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 18
- 230000035939 shock Effects 0.000 description 18
- CYNYIHKIEHGYOZ-UHFFFAOYSA-N 1-bromopropane Chemical compound CCCBr CYNYIHKIEHGYOZ-UHFFFAOYSA-N 0.000 description 17
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 17
- 239000010453 quartz Substances 0.000 description 17
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 16
- SLBOQBILGNEPEB-UHFFFAOYSA-N 1-chloroprop-2-enylbenzene Chemical compound C=CC(Cl)C1=CC=CC=C1 SLBOQBILGNEPEB-UHFFFAOYSA-N 0.000 description 15
- 238000001816 cooling Methods 0.000 description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 15
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 14
- 235000019256 formaldehyde Nutrition 0.000 description 14
- 238000004528 spin coating Methods 0.000 description 14
- 238000001723 curing Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 12
- 239000011651 chromium Substances 0.000 description 12
- 230000001351 cycling effect Effects 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 239000000047 product Substances 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 229940015043 glyoxal Drugs 0.000 description 10
- HDPBBNNDDQOWPJ-UHFFFAOYSA-N 4-[1,2,2-tris(4-hydroxyphenyl)ethyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 HDPBBNNDDQOWPJ-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 229930040373 Paraformaldehyde Natural products 0.000 description 9
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 9
- 229920002866 paraformaldehyde Polymers 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 9
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical class [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 8
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 8
- 235000019341 magnesium sulphate Nutrition 0.000 description 8
- 229910052938 sodium sulfate Inorganic materials 0.000 description 8
- 235000011152 sodium sulphate Nutrition 0.000 description 8
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 150000002989 phenols Chemical class 0.000 description 6
- 238000005382 thermal cycling Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 150000002170 ethers Chemical class 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000012262 resinous product Substances 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 239000003504 photosensitizing agent Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
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- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
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- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
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- 125000005580 triphenylene group Chemical group 0.000 description 2
- 239000003039 volatile agent Substances 0.000 description 2
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- HHAISVSEJFEWBZ-UHFFFAOYSA-N 1-[4-(trifluoromethyl)phenyl]ethanone Chemical compound CC(=O)C1=CC=C(C(F)(F)F)C=C1 HHAISVSEJFEWBZ-UHFFFAOYSA-N 0.000 description 1
- DLKQHBOKULLWDQ-UHFFFAOYSA-N 1-bromonaphthalene Chemical compound C1=CC=C2C(Br)=CC=CC2=C1 DLKQHBOKULLWDQ-UHFFFAOYSA-N 0.000 description 1
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 1
- CWLKTJOTWITYSI-UHFFFAOYSA-N 1-fluoronaphthalene Chemical compound C1=CC=C2C(F)=CC=CC2=C1 CWLKTJOTWITYSI-UHFFFAOYSA-N 0.000 description 1
- NHPPIJMARIVBGU-UHFFFAOYSA-N 1-iodonaphthalene Chemical compound C1=CC=C2C(I)=CC=CC2=C1 NHPPIJMARIVBGU-UHFFFAOYSA-N 0.000 description 1
- QQLIGMASAVJVON-UHFFFAOYSA-N 1-naphthalen-1-ylethanone Chemical compound C1=CC=C2C(C(=O)C)=CC=CC2=C1 QQLIGMASAVJVON-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- LNBMZFHIYRDKNS-UHFFFAOYSA-N 2,2-dimethoxy-1-phenylethanone Chemical compound COC(OC)C(=O)C1=CC=CC=C1 LNBMZFHIYRDKNS-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- UVRUFCHDUZVIFN-UHFFFAOYSA-N 2-ethoxy-1-(2-ethoxyphenyl)-2-phenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1OCC UVRUFCHDUZVIFN-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- QKTWWGYCVXCKOJ-UHFFFAOYSA-N 2-methoxy-1-(2-methoxyphenyl)-2-phenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1OC QKTWWGYCVXCKOJ-UHFFFAOYSA-N 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- HTKUEXYJRFWCOL-UHFFFAOYSA-N 2-phenylethyl(1,2,2-trimethoxyethenyl)silane Chemical compound COC(=C(OC)OC)[SiH2]CCC1=CC=CC=C1 HTKUEXYJRFWCOL-UHFFFAOYSA-N 0.000 description 1
- LHUAPYZJOBNMPP-UHFFFAOYSA-N 3,3-dimethoxyprop-1-enyl(2-phenylethyl)silane Chemical compound COC(OC)C=C[SiH2]CCC1=CC=CC=C1 LHUAPYZJOBNMPP-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- FKDIWXZNKAZCBY-UHFFFAOYSA-N 9,10-dichloroanthracene Chemical compound C1=CC=C2C(Cl)=C(C=CC=C3)C3=C(Cl)C2=C1 FKDIWXZNKAZCBY-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- MZYYLVWMASWJFR-UHFFFAOYSA-N C(C)OC(=C(OCC)OCC)[SiH2]CCC1=CC=CC=C1 Chemical compound C(C)OC(=C(OCC)OCC)[SiH2]CCC1=CC=CC=C1 MZYYLVWMASWJFR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- SXRSQZLOMIGNAQ-UHFFFAOYSA-N Glutaraldehyde Chemical compound O=CCCCC=O SXRSQZLOMIGNAQ-UHFFFAOYSA-N 0.000 description 1
- WSMYVTOQOOLQHP-UHFFFAOYSA-N Malondialdehyde Chemical compound O=CCC=O WSMYVTOQOOLQHP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- ZNWNWEHQFXOPGK-UHFFFAOYSA-N decanedial Chemical compound O=CCCCCCCCCC=O ZNWNWEHQFXOPGK-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 238000006266 etherification reaction Methods 0.000 description 1
- ZKXMKMLGUYSGNS-UHFFFAOYSA-N ethyl 3-cyanobenzoate Chemical compound CCOC(=O)C1=CC=CC(C#N)=C1 ZKXMKMLGUYSGNS-UHFFFAOYSA-N 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940118019 malondialdehyde Drugs 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- BHZRJJOHZFYXTO-UHFFFAOYSA-L potassium sulfite Chemical compound [K+].[K+].[O-]S([O-])=O BHZRJJOHZFYXTO-UHFFFAOYSA-L 0.000 description 1
- 235000019252 potassium sulphite Nutrition 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/28—Chemically modified polycondensates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
A predetermined pattern of a dielectric polymer is formed on a substrate from either a first prepolymer which is the ether of the oligomeric condensation product of dihydric phenol and formaldehyde or a mixture of said oligomer with a second prepolymer which is the ether of the oligomeric condensation product of a dialdehyde and 3 to 4 moles of a phenol.
Description
PHOTODEFINABLE INTERLEVEL DIELECTRICS
The u. S. Government has rights in this invention under U.S. Air Force Contract F33615-89-C-5603 PRIOR ART
This invention relates to materials used to provide isolation of conductive layers in microelectronic circuitry. In particular, it relates to polymeric materials which can be photopolymerized so that dielectric layers can be formed where desired in multilayer structures. Such layers must be excellent insulators, have good chemical resistance and, of course, must adhere to the substrate on which they are placed.
Polyimides have been used for such dielectrics since they have superior temperature and chemical resistance compared to many other polymers. Literature and patents disclosing of the use of polyimides are extensively discussed in 17. S. Patent 4,908,096 by one of the present inventors. The disadvantages of the polyimides are discussed, namely, that they release large amounts of volatiles during curing, absorb moisture, have poor adhesion, and have a relatively high coefficient of expansion. The patent discloses and claims the use of other polymers as interlevel dielectrics having improved properties, namely, vinylbenzyl or alkyl ethers of the condensation products of dialdehydes and phenols.
The present invention relates to other polymers which have been found to provide useful interlevel dielectrics.
In U. S. 4,855,375 one of the present inventors has disclosed oligomers which are ethers of bisphenols and formaldehyde which may be fluorinated and which have application to making laminated boards for
electronic applications. In U. S. Pat. No. 4,816,498 another family of oligomeric condensation products was disclosed which differ from those just discussed in being the condensation products of dialdehydes with 3 to 4 moles of phenols. Such oligomers also are etherified to provide a mixture of vinylbenzyl and alkyl ethers. They may be used to make laminated boards for electronic applications. Such polymers now have been found to be useful as interlevel dielectrics, as will be seen in the discussion below.
SUMMARY OF THE INVENTION
This invention comprises a method of forming a predetermined pattern from a polymer on a substrate and the thus-created dielectric layers.
Such patterns are created by coating onto the substrate a prepolymer and then irradiating the exposed portions of a masking pattern to render the prepolymer insoluble, then selectively dissolving the nonirradiated masked portions of the coating leaving the insoluble irradiated prepolymer, and curing the irradiated prepolymer to form an infusible glassy solid in the predetermined pattern.
The prepolymer is either the first of the two oligomers described below or a mixture of both of the oligomers. The first oligomer is an ether of the oligomeric condensation product of a dihydric phenol and formaldehyde having the formula
s is 1;
each X is C(CF3)2;
each R1 and R2 is independently selected from the group consisting of hydrogen, alley1 and alkoxy moieties containing 1 to 10 carbon atoms, phenyl and phenoxy;
a and b are independently 0 or integers from 1 to
4;
z is Cl or Br;
E is selected from the group consisting of the vinyl-benzyl moiety, alkyl moieties containing 1 to 10 carbon atoms, or benzyl, subject to the constraint that at least 50% of all E's are the vinylbenzyl moiety.
In a preferred embodiment, E is at least 70% vinyl benzyl and the remaining E's are propyl.
The second oligomer is an ether of the oligomeric condensation product of (a) 1 molar proportion of a dialdehyde and (b) from about 3 to about
4 molar proportions of a phenol; where the dialdehyde is selected from the group consisting of oHC(CH2)mCHO, where m = 0 or an integer from 1 to 6, cyclopentanedialdehyde, phthalaldehyde, isophthalaldehyde, terephthalaldehyde, hexahydrophthalaldehyde, cycloheptanedialdehyde, hexahydroisophthalaldehyde, hexahydroterephthalaldehyde, and cyclooctanedialdehyde; where the phenol has the structure R3C6H4OH and where R3 is hydrogen or an alkyl group containing from 1 to about 10 carbon atoms; and where the phenol residue of said oligomeric condensation product is etherified with one or more substituents to afford ether moieties randomly selected from the group consisting of vinylbenzyl, alkyl moieties containing from 1 to 10 carbon atoms, cycloalkyl moieties from 5 to
10 carbon atoms, and benzyl, with the ratio of vinylbenzyl to other moieties being from 1:1 to about 6:1.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Polymeric Resins
In U.S. Patent No. 4,855,375, one of the present inventors disclosed the preparation and use of the ethers of the oligomeric condensation products of a dihydric phenol and formaldehyde and their use in composites, especially laminated boards for electronic uses. It has now been found that these compositions can be used as interlevel dielectrics in combination with the oligomers of U.S. Pat. No. 4,816,498, where they have the advantages of low water absorption, low dielectric constant, low coefficients of thermal expansion, high glass transition temperature, high thermal stability, high solids coating concentrations, and are photochemically curable, thermally curable, and generate little or no volatiles during the cure process.
The prepolymers used in forming a pattern are of two types. The first has the formula:
They result from the etherification of oligomers which are the condensation product of a dihydric phenol and formaldehyde. The product will be a mixture of oligomers with varying molecular weight. The number, n, of recurring units Q generally will vary from 1 to 10. Preferably, n is 1 or an integer from 1 to 6 and the number average of n is about 3.
The recurring unit Q itself has the structure,
Note that the condensation may occur either on the same ring, as in the right hand structure, or in different rings, as in the left hand structure. The aromatic rings in the recurring unit Q are separated by an intervening moiety X, that is, S is 1. Each of the moieties X is hexafluoro isopropylidene [C(CF3)2].
Each of the aromatic rings may bear substituents or may be completely unsubstituted. Thus, R1 and R2 are independently selected from moieties such as hydrogen, alkyl moieties containing from 1 to 10 carbon atoms, the phenyl moiety, alkoxy moieties
containing from 1 to 10 carbon atoms, and phenoxy, C6H5O. Examples of suitable alkyl moieties include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptl, octyl, nonyl, and decyl moieties. The methyl and tert-butyl groups are preferred alkyl moieties, although the variant where R1 = R2 - H is quite desirable.
The basic resins can be modified to be flame retardant by incorporating halogen atoms into the aromatic rings. Thus, Z may be a halogen atom, especially bromine, and where the aromatic ring is halogenated a and b are integers from 1 to 4. Polyhalogenated materials are preferred as flame retardants, and thus a and b are recommended to be 2, 3, or 4.
The oligomeric condensation products have a multiplicity of phenolic hydroxyl groups substantially all of which are end-capped as ether groups in our interlevel dielectric resins. The best case results where the ether portion, E, is a vinylbenzyl moiety, that is, of the structure.
which may be either the meta- or para-isomer, and which usually is a mixture of the meta- and para-isomers. Although it is desirable to have all the phenolic hydroxyls end-capped with vinylbenzyl moieties, there is a cost advantage when fewer than all of the ether groups are vinylbenzyl, but usually at the expense of a somewhat lower dielectric constant. At least 50% of the E moieties should be a vinylbenzyl moiety, but better performance characteristics result when from 70 to 100%
of the ether groups are vinylbenzyl, and the best prepolymer product results when 95 to 100% of such groups are vinylbenzyl. However, for many applications less than complete end-capping with vinyl benzyl groups is acceptable, but all of the hydroxyl groups should be capped.
Where the ether groups include other than vinylbenzyl, then E is an alkyl group containing from 1 to 10 carbons or a benzyl group. Where E is an alkyl group, the primary alkyl groups are preferred, especially the primary lower alkyl groups containing from 1 to 4 carbon atoms. Thus, the most desirable alkyl groups consist of methyl, ethyl, 1-propyl, 1- butyl, and 1-methyl-1-propyl. Other alkyl groups are represented by 1-pentyl, 1-hexyl, 1-heptyl, 1-octyl, 1- nonyl, 1-decyl, 2-methyl-1-butyl, 3-methyl-1-butyl, 2,3- dimethyl-1-butyl, 3,3-dimethyl-1-butyl, 2-methyl-1- pentyl, and so forth.
In a preferred embodiment E is at least 70% vinyl benzyl and the remaining E's are propyl.
The second type of oligomers are ethers of oligomeric condensation products of 1 molar proportion of certain dialdehydes with from about 3 to about 4 molar proportions of a phenol. More particularly, the ether moiety is randomly selected from among the vinylbenzyl moiety, alkyl moieties containing from 1 to 10 carbon atoms, cycloalkyl moieties having from 5 to about 10 carbon atoms, and the benzyl moiety, where the ratio of the vinylbenzyl to other ether moieties is at least 1:1 and may be as great as 6:1.
The phenolic oligomers are the condensation products of 1 molar proportions of selected dialdehydes with 3 to 4 molar proportions of a phenol. Although more than 4 molar proportions of a phenol can be used in
the practice of this invention, no more than 4 molar proportions will react with the dialdehydes.
On class of dialdehydes which may be used in this invention are the linear, terminal alkylene dialdehydes of formula OHC(CH2)mCHO where m is 0 or an integer from 1 to 6. Such dialdehydes include glyoxal, malondialdehyde, succinidialdehyde, glutaraldehyde, adiphaldehyde, pimelaldehyde, and sebacaldehyde. Those aldehydes where m is 0-4 are particularly preferred, and glyoxal (m=0) is especially favored in the practice of this invention.
Other aldehydes which may be employed in preparation of the oligomeric condensation products include cyclopentanedialdehyde, phthalaldehyde, isophthaldehyde, terephthalaldehyde, the hexahydrophthalaldehydes (i.e., the reduced counterpart of the phthalaldehydes where the aromatic ring has been reduced to a cyclohexane ring), cycloheptanedialdehyde, and cyclooctanedialdehyde.
The oligomers are the condensation product of
1 molar proportion of the aforementioned dialdehydes with from 3 to about 4 molar proportions of a phenol. The phenol has the general structure R3C6H4OH where R3 is hydrogen or an alkyl group containing from 1 through about 8 carbon atoms. The most desirable phenol is phenol itself, that is, the case where R3 is hydrogen. Where R3 is an alkyl group it is most desirable that the alkyl group contain from 1 to about 4 carbon atoms, and cresol, the case where R3 is a methyl group is another preferred species of phenol.
The condensation product is analogous to phenol-formaldehyde resins. That is, the products result from the condensation of 2 molar proportions of a phenol with each aldehyde group. In the simplest
case, which can be looked as the "monomeric" product, using phenol and glyoxal to exemplify the reaction, the product has the structure
where the hydroxyls are almost exclusively ortho and para, and largely para, to the point of condensation of the phenol and glyoxal. However, the product above has 4 phenolic groups per molecule, and any one of these may react with another molecule of glyoxal which then further condenses with three other molecules of phenol to give the structure
The oligomeric product above results from a molar proportion of 7 phenols to 2 glyoxals. This oligomer in turn can react with another molecule of glyoxal and the latter can react further with 3 additional phenols to give the next higher oligomer of the structure
which has the molar ratio of 10 phenolic groups to 3 glyoxals. In a similar fashion, the next higher oligomer has a molar ratio of phenol to glyoxal of 13:4, the next higher of 16:5, and so forth, with the limiting molar ratio being 3:1. It needs to be mentioned that a ratio less than 3:1 will never be achieved without internal cyclization, i.e., one molecule of glyoxal is required to react with at least 2 phenolic moieties of the oligomer. In a similar fashion, the condensation product which is the "monomer" has a limiting ratio of phenol-glyoxal of 4:1.
The condensation products are themselves phenols, as mentioned above, and are a mixture of oligomers. This mixture can be characterized by the number of phenolic moieties per molecule. We are concerned with those condensation products which have
from 4 to about 60 phenolic moieties per molecule, and more usually between four and about 22 phenolic moieties per molecule. The product being a mixture of oligomers, the preferred mixture is characterized by having as an average between about 5 and about 8 phenolic moieties per molecule.
More specifically, where the dialdehyde is glyoxal and the phenol is phenol itself each oligomeric product has a molecular weight between about 400 and 6000, and more desirably between about 400 and about 2200. The mixture of oligomeric products may be characterized by an average molecular weight of between about 500 and about 800.
The thermosetting resins of this invention are ethers of the aforedescribed oligomeric condensation products. In one variant of our invention the phenolic condensation products are halogenated prior to ether formation in order to make the final resins more flame retardant. Increased flame retardancy occurs especially when the halogen is chlorine or bromine, and the use of a brominated product is preferred. The halogen is introduced into positions ortho and para to the phenolic hydroxyl group. If all of the ortho and para positions are available a maximum of three halogen atoms per phenolic moiety may be introduced. Often it is desirable to prepare the maximally halogenated oligomeric condensation product, although at times a halogen content less than the maximum is advantageous.
However, in the latter variant it should be clear that there is at least one chlorine or bromine atom per phenolic moiety. The phenolic condensation products are capped so as to convert substantially all (greater than about 99.5%) of the hydroxyls to ether moieties. Each of the ether moieties is randomly selected from the
group consisting of vinylbenzyl, alkyl containing 1 to 10 carbon atoms, cycloalkyl of from 5 to 10 carbon atoms, and benzyl moieties as described above with respect to the first type of oligomer where the ratio of the vinylbenzyl to all other ether moieties is at least 1:1 and may be as high as 6:1.
The prepolymers may be prepared by acid catalyzed condensation of phenols with aldehydes followed by end-capping substantially all the phenolic hydroxyls by converting them to ethers. Acid catalyzed condensation is preferred to avoid the formation of terminal hydroxyl methylene groups, -CH2OH. End-capping by ether formation can be effected by any suitable means, such as by reacting the phenolic condensation product with an alkyl or benzyl halide in a basic medium.
The resulting thermosetting oligomers may be polymerized with attendant crosslinking by a variety of curing means. When curing is effected by thermal means, it generally is autoinitiated by heating the oligomer resin in air or an inert atmosphere at a temperature between about 100 and 300ºC, and more particularly between about 120 and 300ºC. Curing also may be brought about by chemical means using a free radical initiator such as azo-bis-isobutyronitrile, benzoyl peroxide, di-t-butyl peroxide, etc. In the present invention curing is begun by irradiation, especially by visible and ultraviolet light in the presence or absence of a sensitizer or photoinitiator, followed by thermal curing to produce an infusible, insoluble glassy solid.
Photodefinable Applications
The oligomers may be used as a passivant, as an interlevel dielectric, as a means of providing device
deep dielectric isolation (insulator isolating trenches), as a high temperature solder mask, a photoresist, etc. Although much of what follows describes its use primarily as an interlevel dielectric, the skilled worker will recognize from this description how to use the materials of the invention in other applications as well.
The oligomers are applied as a coating to a suitable substrate. Preferably, the coating will have a thickness of 2 to 15 μm, most preferably 5 to 10 μm. For the most part the substrates used will be a silicon wafer, a silicon chip of an integrated circuit, a printed circuit board or a ceramic substrate. The photosensitive oligomers may be applied by spin coating, spray coating, by use of a doctor knife, or any other conventional techniques known in the art to obtain a uniform coating. Where the viscosity is too high, a solution of the resin in a suitable solvent may be used. The oligomers are soluble in a broad class of solvents including polar aprotic solvents, aromatic hydrocarbons, halogenated hydrocarbons, ketones, ester, and so forth. Examples of solvents which may be employed in the practice of our invention include dimethylformamide (DMF), hexamethylphosphoramide (HMPA), N-methylacetamide (NMAc), dimethylsulfoxide (DMSO), N-methylpyrrolidone (NMP), benzene, toluene, xylene, dichloromethane, chloroform, carbon tetrachloride, chlorobenzene, tetrachloroethane, tetrachloroethylene, trichloroethane, gamma-butyrolactone, methyl ethyl ketone, diethyl ketone, hexanone, heptanone, octanone, methyl acetate, ethyl acetate, methoxy ethanol, ethoxy ethanol, and so forth. The solvent should be unreactive with both the substrate and the photosensitive oligomers and able to dissolve the resins to provide at least about a 10
weight-volume percent solution. Since the solvent is typically removed prior to further processing, it is also preferable that as low boiling a solvent as possible be used consistent with the foregoing considerations.
Although the oligomers may be photopolymerized directly, a photosensitizer or photoinitiator may be used and may be useful to decrease irradiation time. Where a photosensitizer or photoinitiator is used it will be added with the oligomers at the coating stage and will be present in an amount from about 0.001 to about 5.0 weight percent relative to the oligomers. Examples of photosensitizers or photoinitiators which may be successively used in the practice of this invention include such materials as benzophenone, 4,4'-bis(dimethylamino)benzophenone, xanthone, acetophenone, 4-trifluoromethyl-acetophenone, triphenylene, thioxanthone, anthraquinone, 4-phenylbenzophenone, naphthalene, 2-acetonaphthalene, 1-acetonaphthalene, chrysene, anthracene, 9,10-dichloroanthracene, pyrene, triphenylene, 1-fluoronaphthalene, 1-chloronaphthalene, 1-bromonaphthalene, 1-iodonaphthalene, 1,3-dicyanobenzene, dimethyl isophthalate, diethyl isophthalate, methyl 3-cyano-benzoate, ethyl 3-cyano-benzoate, phenyl 3-cyano-benzoate, 2,2-dimethoxyacetophenone, 2,2-diethoxyacetophenone, 2,2'-dimethoxy-2-phenylacetophenone, 2,2'-diethoxy-2-phenylacetophenone, benzoin methyl ether, and 1-phenyl-1,2-propanedione-2-O-benzoyloxime. Preferred sensitizers include benzophenone, 4,4'-bis(dimethylamino)benzophenone, 1,3-dicyanobenzene, dimethyl isophthalate, diethyl isophthalate, methyl 3-cyano-benzoate, and phenyl 3-cyano-benzoate.
Where the photosensitive oligomers have been applied as a solution to the substrate the solvent used must be removed prior to irradiation. Consequently, it is conventional to heat the coated substrate for a time sufficient to remove essentially all of the solvent present, if any, prior to irradiation, a stage known as the "softbake." It is for this reason that the use of a low boiling solvent is preferred. It is acceptable to use enough heat to provide a semicured coating, especially since the oligomers may begin to cure at temperatures as low as about 110ºC. The softbake can be carried out in vacuum, under an inert atmosphere (e.g., nitrogen, helium, argon, etc.) or in air.
A mask containing the desired pattern or image is placed in contact or in proximity to the coated substrate and the oligomeric coating is then irradiated through the mask by x-ray, electron beam, ion beam, ultraviolet, or visible radiation. For reasons of economy and ease of fabrication it is preferred to use radiation in the range from about 200 to about 800 nanometers. Since lower wave length radiation tends to afford better resolution, irradiation in the 200-500 nm rang* is preferred. With this treatment the irradiated portion of the coating becomes crosslinked so that the photocrosslinked oligomer is rather insoluble in the same solvent in which the original photosensitive oligomers remain quite soluble.
Irradiation may be done in either the presence or absence of oxygen. Exposure time necessary for adequate photocrosslinking to afford the differential solubility characteristic sought depends upon the wavelength of the light used, its intensity, the presence or absence of a photosensitizer or photoinitiator, and so forth, with a variation from a
few seconds up through several minutes. For production purposes the shorter exposure times are highly preferred. One desirable characteristic of the photosensitive oligomers of this invention is that they photochemically crosslink throughout the thickness of the film. Therefore, the pattern shows no or minimal undercutting upon development.
The selective pattern appears upon development with the solvent. As mentioned above, upon irradiation the photosensitive oligomeric resin becomes extensively crosslinked with a subsequent large differential solubility between the crosslinked, or irradiated, and non-crosslinked, or non-irradiated, portions of the oligomers. The solvents used in the development are in general the same ones used in preparing a solution of the oligomers for coating purposes. Thus, classes of solvents include aprotic solvents, aromatic hydrocarbons, halogenated hydrocarbons, ketones, esters, the Carbitols, mixed solvent systems, and the like.
Upon development selective patterns appear where the elevated portions correspond to the photochemically crosslinked oligomers. These relief structures are then thermally cured to afford a highly crosslinked, infusible, glassy solid highly resistant to elevated temperatures, chemical degradation, ion transport, and which serves as an effective protective layer and dielectric insulator. Curing is attended by crosslinking of the vinyl groups and may be effected either thermally, chemically, or photochemically, with thermal curing preferred. Thermal curing is generally done in the temperature range between about 100ºC and about 300ºC, and often is done in stages. So, for example, curing may first be effected at a temperature between about 150ºC and about 200ºC for 0.5-5 hours with
postcuring at about 180ºC-300ºC for about 0.5-24 hours. Curing also may be brought about using a free radical initiator, such as azo-bis-isobutyronitrile, benzoyl peroxide, di-t-butylperoxide, and so on.
The oligomers of the invention have been found particularly useful in photodefinable applications since they may be coated as solutions with high solids levels and thus less solvent must be evaporated. Also, since no volatile by-products are generated during curing the shrinkage of the films is minimized.
MULTILAYER PROCESSING
The substrate (i.e., ceramic, alumina, silicon, printed wiring board, etc.) may be cleaned with conventional cleaning solvents (e.g., methylene chloride, chloroform, Genesolv®, trichloroethylene, ethanol, methanol, sodium bisulfite, sodium sulfite, potassium sulfite, etc.) employing normal cleaning processes as known in the art. In addition, the substrate may contain circuitry already deposited upon it. The substrate may be utilized after the cleaning process or may be surface treated to promote adhesion between the substrate and the metals and/or polymer dielectric layer.
If used, an adhesion promoter between the substrate and the dielectric layer may be chosen from a range of surface silylating agents containing reactive groups capable of reacting with the polymers of the invention. Examples of surface silylating agents which can be employed are: vinylmethyldimethoxysilane, vinyltrimethoxysilane, vinylmethyldiethoxysilane, vinyltriethoxysilane, diethoxymethylvinylphenethyl-silane, dimethoxymethylvinylphenethylsilane, triethoxyvinylphenethylsilane, trimethoxyvinylphenethyl-
silane, etc. Preferred silylating agents are vinyl methyldimethoxysilane, vinylmethyldiethoxysilane, diethoxymethylvinylphenethylsilane, and dimethoxymethylvinylphenethysilane. The surface silylating agent would be applied to the substrate via dipping, spin coating, or other techniques from an alcohol-water solution. For example, a 1 to 10 wt.% solution of the silylating agent is dissolved in 85 to 98 wt.% of alcohol (e.g., methanol, ethanol, isopropanol, etc.) and 1 to 13 wt.% of water. The substrate is dipped in this solution for 15 seconds to 5 minutes, air dried for 1 minute to 5 hours, and then soft baked for 1 minute to 5 hours at 60 to 100ºC either in a convection oven, vacuum oven or hot plate.
The cleaned and/or surface treated substrate will be covered with metal pattern before being covered with the dielectric layer of the invention. For example, a 500 to 1000 A layer of chromium, 8000 to 20000 A layer of copper and a 500 to 1000 A layer of chromium may be sputtered onto the surface. Then, the metal layer is coated with a commercial photoresist and processed according to the recommended processing scheme utilizing a spin coat, soft bake, imaging, developing, and hard bake cycle. This exposes portions of the metal layer to be removed by etching to create the pattern. The metals are etched utilizing standard wet techniques, for example: The top chromium layer is etched with a 1 to 30 % hydrochloric acid solution activated with aluminum for 10 seconds to 5 minutes; the copper layer is etched with a sodium persulfate solution for 10 seconds to 10 minutes; the bottom chromium layer is etched with a 1 to 30 % hydrochloric acid solution activated with aluminum for 10 seconds to 5 minutes; and finally the etched substrate is washed with deionized
water for 10 to 60 seconds. Then the remaining photoresist is stripped from the metal pattern as per the processing technique recommended for the photoresist. Finally the cleaned substrate is dried prior to the next processing step.
The dielectric layer is coated onto the substrate and its metal pattern and processed as follows: The prepolymer (e.g., 10 to 80 wt. %) in an appropriate solvent (toluene, NMP, DMF, etc.) is spin coated onto the substrate at a speed of 500 to 2500 rpm for 30 to 90 seconds; the prepolymer coated substrate is soft baked at a temperature of 25 to 60ºC for 15 minutes to 24 hours in a vacuum oven with or without a nitrogen bleed; the soft-baked coating is then imaged with a UV light source (220-320 nm range) for 15 seconds to 30 minutes employing a mask of desired design for vias and the like; the photocured polymer is then developed with an appropriate solvent system (e.g., toluene, toluene/hexane, toluene/ethanol, cyclohexane, etc.) at 25 to 35ºC wtth or without ultrasonics or via spraying for 15 to 120 seconds; the developed substrate can then be exposed to a stop or rinse bath or solvent spray based upon a solvent system miscible with the developing solvent but a poor solvent for the polymer system (for example hexane, pentane, ethanol, etc.) (optional step); the vias are then cleaned with a plasma or wet etch; and finally the dried substrate is hard baked in vacuum or under an inert atmosphere (nitrogen, argon, etc.) with a preferred cure cycle including a ramp from 25º to 300ºC for 30 minutes to 10 hours, a hold at 300ºC for 5 hours and then a cool down from 300º to 25ºC with a 30 minute to 10 hour ramp.
The process is repeated as required in order to form an electronic interconnect structure of desired electrical and dielectric levels. Example 1
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (STBPAF6-F (95VBz/5Pr)) Hexafluorobisphenol-A formaldehyde (BPAF6-F) was prepared as follows: 336.24 g (1.00 mole) of hexafluorobisphenol-A, 30.00 g (1.00 mole of formaldehyde functionality) of paraformaldehyde, and 250 mL of ethanol were charged into a 2000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 60ºC, 1.00 mL of concentrated sulfuric acid was added dropwise over a 30 minute interval. The reaction was maintained at 60ºC for 3 days. The solvent was distilled from the reaction mixture and then the resin was dissolved in NMP and coagulated into water, the resin was dried in a vacuum oven at 60ºC, yielding 130.0 g of resin, Mn = 280, Mw = 660, dispersity of 2.4.
126.60 grams of the above BPAF6-F was dissolved in 250 mL of N-methylpyrrolidinone (NMP) in a 100α mL 3-neck round bottom flask equipped with mechanical stirrer, addition funnel, condenser, thermometer, nitrogen purge and Therm-0-Watch. To this reaction mixture was added 120.0 g (0.786 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 0.40 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60'C and 45.0 g (0.802 moles) of potassium hydroxide in 130 mL of methanol was added dropwise over a 45 minute interval. The reaction was maintained at 60ºC for 19 hrs. with stirring under
a nitrogen purge. After cooling to room temperature the reaction mixture was transferred to a separatory funnel, and 2.0 Liters of toluene added and then washed thrice with 4 Liters of water, dried over magnesium sulfate, filtered and concentrated under vacuum. Infrared analysis after workup indicated incomplete capping of the hydroxyl groups; the resin was transferred to 1000 mL 3-neck reaction flask (equipped as above) with 250 mL of NMP. To this reaction mixture was added 57.88 g (0.471 moles) of n-propylbromide was added to the reaction mixture and heated with stirring under purge to 60ºC. To this reaction mixture was then added 26.41 g (0.471 moles) of potassium hydroxide in 65 mL of methanol over a 40 minute interval. The reaction was maintained at 60ºC for 24 hours and then allowed to cool to room temperature. The reaction mixture was then transferred to a separatory funnel, and 2.0 Liters of toluene added and then washed thrice with 2 Liters of water and once with saturated sodium chloride solution, dried over magnesium sulfate, filtered and concentrated under vacuum, yielding a red resinous product; Mn = 700, Mw = 980, dispersity 1.4.
Example 2
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (STBPAF6-F (70VBz/30Pr))
Hexafluorobisphenol-A formaldehyde (BPAF6-F) was prepared as follows: 336.24 g (1.00 mole) of hexafluorobisphenol-A, 45.00 g (1.50 mole of formaldehyde functionality) of paraformaldehyde, and 250 mL of ethanol were charged into a 2000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 80*c, 2.00 mL of
concentrated sulfuric acid was added dropwise over a 30 minute interval. The reaction was maintained at 60ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap and then the resin was dissolved in NMP and coagulated into water, the resin was dried in a vacuum oven at 60ºC, yielding 211.0 g of resin, Mn = 570, Mw = 790, dispersity of 1.39.
211.00 grams of the above BPAF6-F was dissolved in 350 mL of N-methylpyrrolidinone (NMP) in a 2000 mL 3-neck round bottom flask equipped with mechanical stirrer, addition funnel, condenser, thermometer, nitrogen purge and Therm-O-Watch. To this reaction mixture was added 134.0 g (0.878 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 0.10 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60'C and 54.2 g (0.966 moles) of potassium hydroxide in 150 mL of methanol was added dropwise over a 1.2 hr interval. The reaction was maintained at 60ºC for 19 hrs. with stirring under a nitrogen purge. 57.5 g (0.467 moles) of n-propylbromide was added to the reaction mixture, to this reaction mixture was then added 26.4 g (0.471 moles) of potassium hydroxide in 80 mL of methanol over a 2 hour interval, the reaction was maintained at 60ºC for 18 hrs. After cooling to room temperature the reaction mixture was transferred to a separatory funnel, 2 Liters of toluene was added and then washed thrice with 2 Liters of water, dried over magnesium sulfate and stripped under vacuum. IR indicates presence of residual hydroxyl moieties; resin transferred to 2000 mL 3-neck round bottom flask (as equipped above) with 350 mL of NMP. 57.5 g (0.467 moles) of n-propylbromide was added to reaction mixture and then heated with stirring under nitrogen purge to
60ºC. To this reaction mixture was added 26.4 g (0.471 moles) of potassium hydroxide in 80 mL of methanol over a 2 hour period and the reaction was maintained at 60ºC for 18 hrs. Upon cooling the reaction mixture was transferred to a separatory funnel with 2 Liters of toluene, and then washed twice with 2 Liters of water and once with saturated ammonium chloride solution, dried over sodium sulfate, filtered and then concentrated under vacuum, yielding 236.0 g of resin; Mn = 1600, Mw =7200, dispersity of 4.5.
Example 3
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (STBPAF6-F (70VBz/30Pr)) Hexafluorobisphenol-A formaldehyde (BPAF6-F) was prepared as follows: 336.24 g (1.00 mole) of hexafluorobisphenol-A, 30.00 g (1.00 mole of formaldehyde functionality) of paraformaldehyde, and 125 mL of ethanol were charged into a 2000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, ThermO-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 80ºC, 2.00 mL of concentrated sulfuric acid was added dropwise over a 30 minute interval. The reaction was maintained at 80ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap and then the resin was dissolved in NMP and coagulated into water. The resin was dried in a vacuum oven at 60ºC, yielding 167.2 g of resin; Mn = 620, Mw = 790, dispersity of 1.27.
167.2 grams of the above BPAF6-F was dissolved in 550 mL of N-methylpyrrolidinone (NMP) in a 2000 mL 3-neck round bottom flask equipped with mechanical stirrer, addition funnel, condenser, thermometer,
nitrogen purge and Therm-O-Watch. To this reaction mixture was added 106.28 g (0.696 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 0.20 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60ºC and 42.98 g (0.760 moles) of potassium hydroxide in 120 mL of methanol was added dropwise over a 1.0 hr interval. The reaction was maintained at 60ºC for 19 hrs. with stirring under a nitrogen purge. 40.05 g (0.326 moles) of n-propylbromide was added to the reaction mixture, to this reaction mixture was then added 18.17 g (0.323 moles) of potassium hydroxide in 80 mL of methanol over a 2 hour interval and the reaction was maintained at 60ºC for 4 hrs. After cooling to room temperature the reaction mixture was transferred to a separatory funnel, 2 Liters of toluene was added and then washed thrice with 2 Liters of water, dried over sodium sulfate and stripped under vacuum. IR indicates presence of residual hydroxyl moieties; the resin was transferred to 2000 mL 3-neck round bottom flask (as equipped above) with 700 mL of NMP. 40.05 g (0.326 moles) of n-propylbromide, and 0.10 g of BHT was added to reaction mixture, and then heated with stirring under nitrogen purge to 60ºC. To this reaction mixture is then added 18.17 g (0.323 moles) of potassium hydroxide in 80 mL of methanol over a 2 hour period and the reaction was maintained at 60ºC for 4 hrs. Upon cooling the reaction mixture was transferred to a separatory funnel with 2 Liters of toluene, and then washed twice with 2 Liters of water and once with saturated ammonium chloride solution, dried over sodium sulfate, filtered and then concentrated under vacuum, IR indicates presence of hydroxyl groups; resin transferred to 2000 mL 3-neck round bottom flask (as equipped above) with 700 mL of
NMP. 40.05 g (0.326 moles) of n-propylbromide, and 0.10 g of BHT was added to reaction mixture, and then heated with stirring under nitrogen purge to 60ºC. To this reaction mixture was added 18.17 g (0.323 moles) of potassium hydroxide in 80 mL of methanol over a 2 hour period and the reaction was maintained at 60ºC for 4 hrs. Upon cooling the reaction mixture was transferred to a separatory funnel with 2 Liters of toluene, then washed twice with 2 Liters of water and once with saturated ammonium chloride solution, dried over sodium sulfate, filtered and then concentrated under vacuum, yielding 96.72 g of resin; Mn = 1300, Mw = 6900, dispersity of 5.2. Example 4
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (ST8PAF6-F (70VBz/30Pr)) Hexafluorobisphenol-A formaldehyde (BPAF6-F) was prepared as follows: 336.24 g (1.00 mole) of hexafluorobisphenol-A, 22.50 g (0.750 mole of formaldehyde functionality) of paraformaldehyde, and 125 mL of ethanol were charged into a 2000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The. reaction mixture was heated to 80ºC, 2.00 mL of concentrated sulfuric acid was added dropwise over a 30 minute interval. The reaction was maintained at 80ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap and then the resin was dissolved in NMP and coagulated into water, the resin was dried in a vacuum oven at 60ºC, yielding 180.78 g of resin.
180.78 grams of the above BPAF6-F was dissolved in 400 mL of N-methylpyrrolidinone (NMP) in a
2000 mL 3-neck round bottom flask equipped with mechanical stirrer, addition funnel, condenser, thermometer, nitrogen purge and Therm-O-Watch. To this reaction mixture was added 114.88 g (0.753 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 0.10 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60ºC and 52.79 g (0.941 moles) of potassium hydroxide in 150 mL of methanol was added dropwise over a 1.2 hr interval. The reaction was maintained at 60ºC for 19 hrs. with stirring under a nitrogen purge. 43.64 g (0.355 moles) of n-propylbromide was added to the reaction mixture, and then was added 24.88 g (0.443 moles) of potassium hydroxide in 75 mL of methanol over a 2 hour interval and the reaction was maintained at 60ºC for 18 hrs. After cooling to room temperature the reaction mixture was transferred to a separatory funnel, 2 Liters of toluene was added and then washed thrice with 1 Liter of water, dried over magnesium sulfate and stripped under vacuum, yielding a red resinous product; Mn = 660, Mw = 970, dispersity of 1.5.
Example 5
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (STBPAF6-F (70VBz/30Pr))
Hexafluorobisphenol-A formaldehyde (BPAF6-F) was prepared as follows: 1029.7 g (3.062 mole) of hexafluorobisphenol-A, 68.90 g (2.30 mole of formaldehyde functionality) of paraformaldehyde, and 380 mL of ethanol were charged into a 3000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 80ºC, 6.00 mL of concentrated sulfuric acid was added dropwise over a 30
minute interval. The reaction was maintained at 80ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap and then the resin was dissolved in NMP and coagulated into water, the resin was dried in a vacuum oven at 105ºC, yielding 908.0 g of resin.
900.0 grams of the above BPAF6-F was dissolved in 2000 mL of N-methylpyrrolidinone (NMP) in a 5000 mL 3-neck round bottom flask equipped with mechanical stirrer, addition funnel, condenser, thermometer, nitrogen purge and Therm-O-Watch. To this reaction mixture was added 572.0 g (3.748 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 0.50 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60ºC and 263.0 g (4.687 moles) of potassium hydroxide in 500 mL of methanol was added dropwise over a 2.0 hr interval. The reaction was maintained at 60ºC for 19 hrs. with stirring under a nitrogen purge. 299.0 g (2.431 moles) of n-propylbromide was added to the reaction mixture, to this reaction mixture was then added 135.0 g (2.406 moles) of potassium hydroxide in 250 mL of methanol over a 2 hour interval, the reaction was maintained at 60ºC for 4 hrs. After cooling to room temperature the reaction mixture was transferred to a separatory funnel, 4 Liters of toluene was added and then washed thrice with 4 Liters of water, dried over magnesium sulfate and stripped under vacuum, yielding a red resinous product; Mn = 490, Mw = 1200, dispersity of 2.5.
Example 6
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (STBPAF6-F (70VBz/30Pr))
1138.4 g (3.386 mole) of hexafluorobisphenol-A, 76.18 g (2.539 mole of formaldehyde functionality) of paraformaldehyde, and 430 mL of ethanol were charged into a 5000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 60ºC, 7.00 mL of concentrated sulfuric acid was added dropwise over a 30 minute interval. The reaction was maintained at 60ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap. The BPAF6-F Resin was dissolved in 1500 mL of N-methylpyrrolidinone (NMP). To this reaction mixture was added 723.42 g (4.740 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 0.50 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60ºC and 292.55 g (5.214 moles) of potassium hydroxide in 650 mL of methanol was added dropwise over a 2.5 hr interval. The reaction was maintained at 60ºC for 19 hrs. with stirring under a nitrogen purge. 333.12 g (2.708 moles) of n-propylbromide was added to the reaction mixture, to this reaction mixture was then added 151.97 g (2.708 moles) of potassium hydroxide in 350 mL of methanol over a 2 hour interval, the reaction was maintained at 60ºC for 4 hrs. After 4 hrs. a small (50 mL) sample of the reaction mixture was worked up and analyzed, the sample showed residual hydroxyl groups. 150.0 g (1.220 moles) of n-propylbromide was added to the reaction mixture at 60ºC, and then 75.0 g (1.337 moles) of potassium hydroxide in 180 mL of methanol was added over a 1 hr interval and then heated at 60ºC for 18 hrs. A small
sample (50 mL) of the reaction mixture was worked up and analyzed, once again residual hydroxyl groups were found. 75.0 g (0.610 moles) of n-propylbromide was added to the reaction mixture and then heated to 60ºC with stirring under a nitrogen purge, 75.0 g (1.337 moles) of potassium hydroxide in 180 of methanol was added to the reaction mixture over a 1 hour interval, the reaction was maintained at 60ºC for 4 hour. Upon cooling to room temperature the reaction mixture was transferred to a separatory funnel, 4.5 Liters of toluene was added and then washed twice with 2 Liters of water, and once with saturated ammonium chloride solution, dried over sodium sulfate and stripped under vacuum, yielding a red resinous product; Mn = 3300, Mw = 5000, dispersity of 1.5.
Example 7
Synthesis of Styrene Terminated Hexafluorobisohenol-A- Formaldehyde (STBPAF6-F (70VBz/30Pr))
795.6 g (2.366 mole) of hexafluorobisphenol-A,
35.4 g (1.180 mole of formaldehyde functionality) of paraformaldehyde, and 300 mL of ethanol were charged into a 5000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 80ºC, 5.00 mL of concentrated sulfuric acid was added dropwise over a 30 minute interval. The reaction was maintained at 80ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap. The BPAF6-F Resin was dissolved in 1600 mL of N-methylpyrrolidinone (NMP). To this reaction mixture was added 505.6 g (3.313 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 0.25 g of 2,6-di-tert-butyl-p-cresol (BHT). The
reaction mixture was heated to 60ºC and 185.89 g (3.313 moles) of potassium hydroxide in 400 mL of methanol was added dropwise over a 2.0 hr interval. The reaction was maintained at 60ºC for 18 hrs. with stirring under a nitrogen purge. 290.99 g (2.365 moles) of n-propylbromide was added to the reaction mixture, to this reaction mixture was then added 132.75 g (2.366 moles) of potassium hydroxide in 280 mL of methanol over a 1 hour interval, the reaction was maintained at 60ºC for 24 hrs. Upon cooling to room temperature the reaction mixture was transferred to a separatory funnel, 4.0 Liters of toluene was added and then washed twice with 2 Liters of water, and once with saturated ammonium chloride solution, dried over sodium sulfate and stripped under vacuum, yielding 864.7 g of resin; Mn = 480, Mw = 700, dispersity of 1.5.
Example 8
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (STBPAF6-F (70VBz/30Pr))
2131.9 g (6.340 mole) of hexafluorobisphenol-A, 142.80 g (4.760 mole of formaldehyde functionality) of paraformaldehyde, and 1200 mL of ethanol were charged into a 12000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 60ºC, 15.00 mL of concentrated sulfuric acid was added dropwise over a 44 minute interval. The reaction was maintained at 60ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap. The BPAF6-F Resin was dissolved in 3700 mL of N-methylpyrrolidinone (NMP). To this reaction mixture was added 1390.3 g (9.110 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio)
and 1.30 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60ºC and 622.5 g (11.094 moles) of potassium hydroxide in 1200 mL of methanol was added dropwise over a 2.0 hr interval. The reaction was maintained at 60ºC for 46 hrs. with stirring under a nitrogen purge. 833.0 g (6.772 moles) of n- propylbromide was added to the reaction mixture, and then was added 355.8 g (6.341 moles) of potassium hydroxide in 900 mL of methanol over a 45 minute interval, the reaction was maintained at 60"C for 20 hrs. Upon cooling, a small (50 mL) sample of the reaction mixture was worked up and analyzed, the sample showed residual hydroxyl groups. 320.0 g (2.602 moles) of n-propylbromide was added to the reaction mixture and then heated with stirring under a nitrogen purge to 60ºC, and then 146.0 g (2.602 moles) of potassium hydroxide in 300 mL of methanol was added over a 30 minute interval and maintained at 60ºC for 18 hrs. Upon cooling to room temperature the reaction mixture was transferred to a separatory funnel, 6.0 Liters of toluene was added and then washed twice with 4 Liters of water, and once with saturated ammonium chloride solution, dried over magnesium sulfate and stripped under vacuum, IR indicates small residual hydroxyl group. Resin taken up in 3000 mL of NMP and recharged into 12000 mL reactor as equipped above. 1.2 g of BHT, and 300.0 g (2.439 moles) of n-propylbromide was added to the reaction mixture and then heated with stirring under a nitrogen purge to 60ºC. Then 136.0 g (2.424 moles) of potassium hydroxide in 300 mL of methanol was added over a 2 hour interval and maintained at 60ºC for 18 hrs. Upon cooling to room temperature the reaction mixture was transferred to a separatory funnel, 6.0 Liters of toluene was added and then washed twice with
4 Liters of water, and once with saturated ammonium chloride solution, dried over magnesium sulfate, filtered, and concentrated under vacuum, yielding a red resinous product; Mn = 810, Mw = 12500, dispersity of 15.0.
Example 9
Synthesis of Styrene Terminated Hexafluorobisphenol-A- Formaldehyde (STBPAF6-F (60VBz/40Pr))
2164.0 g (6.436 mole) of hexafluorobisphenol-A, 144.95 g (4.832 mole of formaldehyde functionality) of paraformaldehyde, and 1200 mL of ethanol were charged into a 12000 mL 3-neck flask equipped with a mechanical stirrer, thermometer, Therm-O-Watch, condenser, addition funnel and nitrogen purge. The reaction mixture was heated to 80ºC, 15.00 mL of concentrated sulfuric acid was added dropwise over a 40 minute interval. The reaction was maintained at 80ºC for 1 day. The solvent was distilled from the reaction mixture with the reactor equipped with a Dean-Stark trap. The BPAF6-F Resin was dissolved in 4600 mL of N-methylpyrrolidinone (NMP). To this reaction mixture was added 1178.7 g (7.723 moles) of vinylbenzylchloride (60/40 para/meta isomer ratio) and 1.13 g of 2,6-di-tert-butyl-p-cresol (BHT). The reaction mixture was heated to 60ºC and 541.7 g (9.654 moles) of potassium hydroxide in 1000 mL of methanol was added dropwise over a 4.25 hr interval. The reaction was maintained at 60ºC for 18 hrs. with stirring under a nitrogen purge. 791.6 g (6.436 moles) of n-propylbromide was added to the reaction mixture, to this reaction mixture was then added 361.12 g (6.436 moles) of potassium hydroxide in 800 mL of methanol over a 2.5 hour interval, the reaction was maintained at 60ºC for 44 hrs. Upon cooling, a small (50 mL) sample of the reaction mixture was worked up and analyzed, the sample
showed residual hydroxyl groups. 316.65 g (2.574 moles) of n-propylbromide was added to the reaction mixture and then heated with stirring under a nitrogen purge to
60ºC. Then, 144.45 g (2.574 moles) of potassium hydroxide in 300 mL of methanol was added over a 2 hour interval and maintained at 60ºC for 18 hrs. Upon cooling to room temperature the reaction mixture was transferred to a separatory funnel, 8.0 Liters of toluene was added and then washed twice with 4 Liters of water, twice with 7 Liters of water, and twice with saturated ammonium chloride solution, dried over magnesium sulfate, filtered, and then concentrated under vacuum, yielding 2724.1 g of resin; Mn = 750, Mw = 1300, dispersity of 1.7.
Example 10
Synthesis of Styrene-Terminated Tetraphenol Ethane
(70% Vinylbenzyl/30% Propyl) (STTPE(70 VBz/30 Pr))
To a 250 mL round bottom, 3-neck flask equipped with a stirring shaft, an addition funnel and a condenser was added 25.0 g tetraphenol ethane (TPE) (Mn=274, Mw=711) (0.0354 mol), 0.23 g BHT (0.00106 mol) and 120 mL N-methyl pyrollidinone (NMP). Upon dissolution of the TPE, 26.48 g vinylbenzyl chloride (VBC) (0.174 mol) were added and the vessel flushed and placed under positive nitrogen pressure by means of a mineral oil bubbler. The solution was heated to 60ºC by means of a water bath and 11.34 g KOH (0.177 mol) dissolved in 25 mL of methanol were added dropwise over 30 minutes. The mixture was kept at 60ºC for an additional 3.5 hours, 9.0 mL l-bromopropane (0.099 mol) was added. 4.86 g KOH (0.0758 mol) dissolved in 11 mL methanol was then added dropwise over 30 minutes and the temperature maintained at 50ºC an additional 1.5 hours.
The mixture was cooled and slowly added to 600 mL of methanol leaving a solid yellow mass. The methanol was decanted and the solids along with fresh methanol were placed in a blender to produce an oily solid which was collected on a Buchner funnel. This material was dissolved in dichloromethane and washed with 4 × 500 mL water. The organic phase was dried over sodium sulfate and filtered through Celite. Solvent was removed by rotary evaporation leaving an orange semi-solid, 49% yield. GPC examination of resin indicates Mn=1040, Mw=1290, dispersity 1.24. Infrared examination of resin indicates some residual OH (<5%), ion chromatography indicates: 17 ppm Cl-, <1 ppm Br-, 1 ppm SO4 -2.
Example 11
Synthesis of Styrene Terminated Tetraphenol Ethane
(100% Vinylbenzyl) (STTPE (100 VBz)) To a 2-L, 3-neck round bottom flask equipped with a stirring shaft, an additional funnel and a condenser was added 200.0 g tetraphenol ethane (TPE) (Mn=274, Mw=711) (0.284 mol), 1.88 g BHT (0.00852 mol) and 950 mL N-methyl pyrollidinone (NMP). Upon dissolution of the TPE 242.65 g vinylbenzyl chloride (VBC) (1.59 mol) was added and the vessel flushed and placed under positive nitrogen pressure by means of a mineral oil bubbler. The solution was heated to 60ºC by a water bath and 101.95 g KOH (1.59 mol) dissolved in 230 mL of methanol were added dropwise over 30 minutes. The mixture was kept at 60ºC, for an additional 4.7 hours and 15.17 g VBC (0.0994 mol) was then added. 6.37 g KOH (0.0994 mol) dissolved in 15 mL methanol was then added dropwise. A final identical addition of VBC and KOH/methanol was made 1.7 hours later and the reaction maintained at 60ºC for 1 hour longer.
The mixture was cooled and 1.2 L toluene were added. The mixture was washed with 1×3 L water and 2×3 L 1M NaCl (aq). The organic phase was dried over sodium sulfate, slurried with Celite and filtered. Solvent was removed by rotary evaporation up to 40ºC at 3 torr leaving a viscous brown resin, 95% yield. GPC analysis found Mn=778, Mw=1079, dispersity 1.39; Infrared analysis indicates no residual hydroxyl (<0.5%); Ion Chromatography found: 45 ppm Cl-.
Example 12
A series of styrene terminated hexafluorobisphenol-A formaldehydes (STBPAF6-F) (STBPAF6-F) (samples 1, 2, 3, and 4 below) prepared in Examples 5, 3, 2, and 9, respectively, were cured via the following cure cycle 2 hrs. at 80ºC, 16 hrs. at 100ºC, 4 hrs. at 120ºC, 16 hrs. at 160ºC, 2 hrs. at 200ºC and 1 hr. at 225ºC and their properties measured. The results are summarized in the following table.
Table A
Sample No. 1 2 3 4
Tg ( ºC) (a) >300 >300 >300 >300
Tsp ( º C) (b) 142±3 181±5 212±5 145±5 αsp (ppm/ºC) (c) 56±6 69±9 74±2 67±1 α260 (ppm/ºC) (d) 81±6 83±12 109±7 134±6
∈' (e) 2.76 2.78 2.83 2.77 tan δ (f) 0.001 0.001 0.004 0.002
∈' (g) 2.79 2.82 2.88 2.80 tan δ (h) 0.0004 0.004 0.002 0.002
% Water Absorption(ι) 0.137 0.152 0.230 0.078
(a) glass transition temperature by differential scanning calorimeter
(b) softening point by Thermo Mechanical Analysis - minor thermal transition
(c) coefficient of thermal expansion between 25ºC and softening point
(d) coefficient of thermal expansion between 25ºC and 260ºC
(e) dielectric constant at 1 MHz and 0% Relative Humidity at 25ºC
(f) loss tangent at 1 MHz and 0% Relative Humidity at 25ºC
(g) dielectric constant at l MHz and 50% Relative Humidity at 25ºC
(h) loss tangent at 1 MHz and 50% Relative Humidity at 25ºC
(i) at 50% Relative Humidity, 25ºC for 168 hours
Example 13
A series of coating solutions were prepared and used to coat silicon surfaces. The solution concentrations were between 55.0 and 61.5 wt. % STBPAF6-F (Example 5) in toluene. The solutions were applied by spin coating at 900-950 rpm for 60 seconds. The coated discs were soft baked at 25ºC for 18 hours under vacuum. Then, they were exposed for 3 minutes to UV irradiation with a 300 watt mercury vapor lamp with a quartz/water filter. The irradiated coatings were then exposed to various solvents and the amount of cured resin dissolved was measured. The results are shown in the following tables.
Table B
% STBPAF6-F Removed (a)
Solvent (Toluene:Ethanol)(b)
Time(sec)
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 6.52 1.41 4.37 2.35 2.83 1.38
60 5.07 0.94 1.75 1.33 0.00 -3.23
90 7.25 2.35 3.06 3.98 3.30 0.46
120 9.42 4.23 4.80 6.19 6.60 3.23
180 9.42 4.23 6.11 6.64 6.60 3.69
300 1.45 0.00 2.18 1.77 1.89 -2.76 a) STABPAF6-F coated on silicon wafer and soft baked at 25ºC for 18 hrs., 3 minute cure 300 Watt
Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Table C
% STBPAF6-F Removed (a)
Solvent (Toluene:n-Hexane)(b)
Time(sec)
100:0 80:20 60:40 40:60 20.80 0:100
0 0 0 0 0 0 0
30 6.52 0.00 0.85 -0.88 -1.42 -1.44
60 5.07 -0.93 0.00 -0.44 -2.37 -2.88
90 7.25 1.40 1.70 0.00 -2.37 -0.48
120 9.42 4.19 2.98 1.77 -0.47 0.00
180 9.42 2.33 3.40 2.65 -0.47 -0.96
300 1.45 -1.40 1.70 -2.65 -5.21 -4.33 a) STBPAF6-F coated on silicon water and soft baked at 25ºC for 18 hrs., 3 minute cure 300 Watt
Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Tables B and C may be compared with the results of Tables D and E below in which only the soft bake was carried out and no curing by UV radiation was done. Tabl e D
% STBPAF6-F Removed(a)
Solvent (Toluene:Ethanol) (b)
Time (sec)
100 : 0 80 :20 60 : 40 40 : 60 20 :80 0 : 100 0 0 0 0 0 0 0
30 90.13 86.28 94.76 76.75 20.45 1.35
60 98.65 97.35 100.87 89.47 25.91 2.25
90 100.45 96.02 101.31 94.30 30.00 -1.35
120 101.79 103.10 101.75 98.25 33.18 1.80 180 101.79 103.10 102.62 97.80 37.27 4.50
300 100.00 99.12 100.00 94.30 37.27 0.00 a) STBPAF6-F coated on silicon wafer and soft baked at 25ºC for 18 hrs.
b) Weight % solutions. Tabl e E
% STBPAF6-F Removed (a)
Solvent (Toluene:n-Hexane) (b)
Time(sec)
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 90.13 29.55 3.57 2.65 -1.37 -0.45
60 98.65 91.36 15.18 0.88 0.00 -2.27
90 100.45 97.73 59.38 6.64 1.37 -2.73
120 101.79 102.73 85.71 16.81 5.02 0.91
180 101.79 102.73 91.96 22.12 5.94 0.91
300 100.00 100.00 95.09 27.88 1.83 -1.36
a) STBPAF6-F coated on silicon water and soft baked at 25ºC for 18 hrs.
b) Weight % solutions. The following tables, F and G, make a similar comparison using another solvent system and in which the effect of UV radiation on the resin is demonstrated.
Table F
% STBPAF6-F Removed (a)
Solvent (Cyclohexane:hexane)(b) Time(sec)
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0 30 92.91 97.01 91.45 86.36 68.75 54.68
60 98.65 99.25 95.17 87.76 73.16 58.99
90 98.99 99.63 95.17 87.76 75.74 62.23
180 99.24 99.25 95.17 89.16 78.31 65.11
300 100.00 99.25 96.65 89.86 80.88 67.99 a) STBPAF6-F coated on silicon wafer and soft baked at 25ºC for 18 hrs.
b) Weight % solutions.
Table G
% STBPAF6-F Removed (a)
Solvent (Cyclohexane:hexane)(b)
Time(sec)
100:0 80:20 60:40 40:60 20:80 0.100
0 0 0 0 0 0 0
30 0.00 -1.09 1.41 1.42 -1.05 -0.69
60 0.00 0.36 -0.35 2.48 -1.40 -1.38
90 0.71 0.73 1.76 2.84 -1.05 -0.69
180 0.71 0.73 1.76 2.48 -1.40 0.00
300 -0.36 0.00 1.41 3.19 -1.75 0.00
a) STBPAF-6 coated on silicon wafer and soft baked at 25ºC for 18 hrs., 3 minute cure 300 Watt Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Example 14
STBPAF6-F resin of Example 7 was dissolved in toluene to yield a solution of composition 58.9% STBPAF6-F and 41.1% toluene. This solution was spin coated onto a silicon surface utilizing spin coating rates from 600 rpm to 2000 rpm for 60 seconds; and soft baked for 24 hours at 25ºC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25ºC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25ºC to 238ºC ramp in 1 hour, held at 238ºC for 2.5 hours and then cooled to room temperature.
The film thickness and sidewall angle of the photocured polymer was analyzed utilizing a Sloan Technology Corporation Dektak 3030 profilometer.
Table H
Spin Speed Film thickness Sidewall Angle
(rpm) (μm)
600 8.5 40
600 8.5 10
700 8.0 45
700 5.3 27
800 7.5 42
800 6.0 8
1000 7.0 4
1000 6.0 7
1000 6.0 27
1000 6.5 31
1500 6.0 18
1500 11.5 42
1500 3.5 15
2000 4.5 21
2000 2.8 25
2000 4.5 11
2000 4.2 28
Example 15
STBPAF6-F resin of Example 7 was dissolved in toluene to yield a solution of composition ranging from 41.7% to 72.0% STBPAF6-F and 28.0% to 58.3% toluene. These solutions were spin coated onto a silicon surface utilizing spin coating rates from 700 rpm to 1500 rpm for 60 seconds; soft baked for 24 hours at 25ºC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAP Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25ºC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25ºC to 220ºC ramp in 1 hour, held at 220ºC for 2.5 hours and then cooled to room temperature.
The film thickness of the photocured polymer was analyzed employing a Taylor-Hobson Talysurf 10 profilometer.
Table I
STBPAF6-F Viscosity Spin Speed Film thickness
(Wt.%) (mPa s) (rpm) (μm)
41.7 <4.0 700 3.2
41.7 <4.0 1000 2.7
41.7 <4.0 1500 2.9
50.0 8.0 700 6.5
50.0 8.0 1000 4.8
50.0 8.0 1500 3.9
64.2 22.0 700 12.0
64.2 22.0 1000 9.0
64.2 22.0 1500 8.5
72.0 227.0 1000 20.2
72.0 227.0 1500 15.8
Example 16
STBPAF6-F resin of Example 7 was dissolved in toluene to yield a solution of composition ranging from 41.7% to 72.0% STBPAF6-F and 28.0% to 58.3% toluene. This solution was spin coated onto a silicon substrate (surface) utilizing spin coating rates from 700 rpm to 1500 rpm for 60 seconds; soft baked for 24 hours at 25ºC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25ºC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25ºC to 220ºC ramp in 1 hour, held at 220ºC for 2.5 hours and then cooled to room temperature. The samples
were then metallized via ion-beam sputtering to yield a metal film of thickness 5000 to 10000 A.
The adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal shock cycling. A thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55ºC for 10 minutes, -55ºC to 125ºC over a rapid ramp, hold at 125ºC for 10 minutes. In the following tables the ratio given means that of 25 squares of the metal, some to all of them were not removed by the tape. That is, 25/25 means that all the squares remained adhered to the dielectric polymer while 5/25 means that 20 squares of metal were removed.
Table J
Adhesion Measurements Results
Metal Before Thermal After 92 After 184
Layer Shock Cycling Cycles Cycles
2.5 10.0 2.5 10.0 2.5 10.0 lb.(b) lb. lb. lb. lb. lb.
Chromium 25/25 25/25 25/25 25/25 25/25 25/25
Passed Passed Passed Passed Passed Passed
Chromium 25/25 25/25 25/25 25/25 25/25 25/25
Passed Passed Passed Passed Passed Passed
Copper 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed
Copper 5/25 4/5 0/4 - - - - - - - - - - - - - - -
Passed Passed Passed
Aluminum 25/25 25/25 24/25 24/24 a a Passed Passed Passed Passed
Aluminum 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed
Gold 7/25 7/7 a a a a
Passed Passed Gold 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed
Nickel 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed
Nickel 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed a) Sample not evaluated.
b) Tape rating in lb. for 1/2 inch wide tape.
Example 17
STBPAF6-F resin of Example 5 was dissolved in toluene to yield a solution of composition 58.9% STBPAF6-F and 41.1% toluene. This solution was spin coated onto an alumina or silicon substrate (surface) utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60ºC under nitrogen. The polymer was hard baked employing a cure cycle under nitrogen of 25ºC to 220ºC ramp in 3 hour, held at 220ºC for 2.0 hours and then ramped from 220ºC to 25ºC in 4 hours.
The adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal
shock cycling. A thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55ºC for 10 minutes, -55ºC to 125ºC over a rapid ramp, hold at 125ºC for 10 minutes.
Table K
Adhesion Measurements Results
Substrate Before Thermal After 92 Cycles
Shock Cycling
2.5 lb 10.0 lb 2.5 lb. 10.0 lb
Alumina 0/25 - - - - - - - - - - - - - - - - - - Passed
Silicon 0/25 - - - - - - - - - - - - - - - -
Passed Example 18
STBPAF6-F resin of Example 5 was dissolved in toluene to yield a solution of composition 58.9% STBPAF6-F and 41.1% toluene. This solution was spin coated onto an alumina substrate (surface) onto which had been ion-sputtered with a metal film of thickness 5000A, utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60ºC under nitrogen. The polymer was hard baked employing a cure cycle under nitrogen of 25ºC to 220ºC ramp in 3 hours, held at 220ºC for 2.0 hours and then ramped from 220ºC to 25ºC in 4 hours.
The adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal shock cycling. A thermal shock cycle encompasses the
following thermal cycling of the sample: hold at -55ºC for 10 minutes, -55ºC to 125ºC over a rapid ramp, hold at 125ºC for 10 minutes.
Table L
Adhesion Measurements Results
Metal Before Thermal After 92 Cycles
Layer Shock Cycling
2.5 lb 10.0 lb 2.5 lb. 10.0 lb
Chromium 25/25 25/25 a a
Passed Passed
Nickel 0/25 - - - - - - - - - - - - - - -
Passed(b)
Copper 0/25 - - - - - - - - - - - - - - -
Passed(b)
Aluminum 3/25 0/3 - - - - - - - - - - Passed Passed
Gold 0/25 - - - - - - - - - - - - - - -
Passed(b) a) Sample not evaluated.
b) Failed at polymer to metal interface.
As can be be seen in the above Examples 14-16 chromium adhered particularly well to the dielectric polymers and thus can serve as a suitable base for copper layers which provide conductive patterns in the multilevel structures.
Example 19
A series (Samples 1, 3, and 5 below) of mixtures of styrene-terminated hexafluorobisphenol-A formaldehyde (STBPAF6-F) of Example 5 and styrene- terminated tetraphenol ethane (STTPE) of Example 10 were prepared and cured via the following cure cycle: 2 hrs. at 80ºC, 16 hrs. at 100ºC, 4 hrs. at 120ºC, 16 hrs. at 160ºC, 2 hrs. at 200ºC and 1 hour at 225ºC and their properties were measured.
Another series of mixtures were prepared from STBPAF6-F of Example 2 and STTPE of Example 10 are prepared and cured by the same curing cycle. These are samples 2 and 4 in the table below.
Table A
Sample No. 1 2 3 4 5
STBPAF6-F (90/10) (90/10) (75/25) (75/25) (50/50) STTPE
Tg (*C)(a) >300 >300 >300 >300 >300
Tsp (ºC)(b) 151+2 152±7 165±3 162±6 168±5 αsp (ppm/ºC)(c) 69±5 59±5 61±1 65±4 69±9 α260 (PPm/ºC)(d) 95±1 77±4 77±4 83±4 93±7
∈' (e) 2.72 3.01 2.82 2.99 2.85 tan δ (f) 0.001 0.002 0.002 0.002 0.002
∈' (g) 2.81 3.09 2.86 3.05 2.94 tan δ (h) 0.001 0.004 0.002 0.001 0.003
% Water
Absorption(i) 0.126 0.296 0.135 0.294 0.150
Modulus(GPa)(j) 9.1 - 9.0 - 9.0
Tg(ºC)(k) >200 - >200 - >200
(a) glass transition temperature by differential scanning calorimeter
(b) softening point by Thermo Mechanical Analysis - minor thermal transition
(c) coefficient of thermal expansion between 25ºC and softening point
(d) coefficient of thermal expansion between 25º and 260ºC
(e) dielectric constant at 1 MHz and 0% Relative Humidity at 25ºC
(f) loss tangent at 1 MHz and 0% Relative Humidity at 25ºC
(g) dielectric constant at 1 MHz and 50% Relative
Humidity at 25ºC
(h) loss tangent at 1 MHz and 50% Relative Humidity at
25ºC
(i) at 50% Relative Humidity, 25ºC for 168 hours
(j) modulus measured from -125ºC to 200ºC at 4 Hz
(k) glass transition temperature by DMA at 4 Hz, scanned from -125ºC to 200ºC
Example 20
A series of coating solutions were prepared and used to coat silicon surfaces. The solution concentrations were between 57.4 and 70 wt. % of STBPAF6-F from Example 5 and STTPE from Example 10 in toluene. The solutions were applied by spin coating at 800-1000 rpm for 60 seconds. The coated discs were soft baked at 25ºC for 18 hours under vacuum. Then, they were exposed for 3 minutes to UV irradiation with a 300 watt mercury vapor lamp with a quartz/water filter. The irradiated coatings were then exposed to various
solvents and the amount of cured resin dissolved was measured. The results are shown in the following tables.
Table B
% STBPAF6-F/STTPE (90:10) Removeda
Time (sec) Solvent (Toluene:Ethanol)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 15.32 27.94 4.04 6.75 0.22 -0.22
60 19.91 31.64 4.93 6.97 1.32 -1.33
90 19.91 32.79 5.38 6.97 1.10 -2.00
120 21.23 33.03 7.40 3.92 3.30 -1.11
180 22.10 35.10 7.40 8.71 2.42 -0.67
300 21.44 34.18 6.95 10.02 2.20 -0.22 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs., 3 minute cure 300 Watt Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Table B may be compared with the results of Table C below in which only the soft bake was carried out and no curing by UV radiation was done.
Table C
% STBPAF6-F/STTPE (90:10) Removeda
Time (sec) Solvent (Toluene:Ethanol)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 99.59 98.53 95.77 95.79 23.98 -1.29
60 98.78 98.74 98.31 98.20 32.33 1.72
90 99.39 98.95 97.25 98.80 35.55 0.86
120 99.39 99.16 98.52 99.40 40.26 1.72
180 99.39 100.00 99.37 99.80 44.54 2.15
300 100.00 98.95 97.89 98.00 46.68 1.93
a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs.
b) Weight % solutions. Table D and E are comparisons of the effect of UV radiation is demonstrated utilizing solvent systems based on toluene:ethanol.
Table D
% STBPAF6-F/STTPE (90:10) Removeda Time (sec) Solvent (Toluene:n-Hexane)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 15.32 99.77 32.34 35.52 0.45 -0.46
60 19.91 100.45 40.37 43.67 1.81 0.23
90 19.91 100.68 41.51 46.38 0.00 -1.85
120 21.23 101.36 43.12 49.77 1.35 0.69
180 22.10 100.23 43.12 50.00 0.90 -0.23
300 21.44 100.23 44.04 52.04 1.81 0.69 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs., 3 minute cure 300 Watt Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Table E
% STBPAF6-F/STTPE (90:10) Removeda
Time (sec) Solvent (Toluene:n-Hexane)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 99.59 99.11 98.05 98.53 34.92 0.90
60 98.78 99.33 99.35 99.37 50.76 2.03
90 99.39 99.11 99.35 98.11 57.92 0.90
120 99.39 99.33 99.57 99.37 63.12 2.93
180 99.39 99.33 99.57 98.74 67.03 1.80
300 100.00 99.78 98.92 100.42 72.89 1.80 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs.
b) Weight % solutions.
The following tables, F and G, may be compared with Tables H and I and the effect of UV radiation on the resin is demonstrated.
Table F
% STBPAF6-F/STTPE (75:25) Removeda
Time (sec) Solvent (Toluene:Ethanol)b
100:0 80L20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 97.31 97.56 96.78 96.85 28.21 3.33
60 99.27 98.78 99.50 98.06 40.00 2.31
90 97.56 97.07 98.51 96.85 46.41 3.08
120 99.27 96.82 98.76 98.06 52.56 4.10
180 98.29 97.07 98.51 98.06 56.41 3.59
300 98.04 98.53 97.52 97.82 63.08 3.85 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs.
b) Weight % solutions.
Table G
% STBPAF6- F/STTPE (75:25) Removeda
Time (sec) Solvent (Toluene:n-Hexane)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 97.31 97.22 100.00 99.75 35.48 2.05
60 99.27 96.46 99.49 100.00 56.30 3.08
90 97.56 98.23 100.51 100.75 62.47 3.85
120 99.27 97.98 100.26 98.51 65.04 3.33
180 98.29 98.74 100.77 100.50 72.24 9.49
300 98.04 98.74 101.02 101.24 71.47 9.49 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs.
b) Weight % solutions. Table H
% STBPAF6-F/STTPE (75:25) Removeda Time (sec) Solvent (Toluene:Ethanol)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 0.46 1.41 1.96 6.81 0.00 -1.70
60 0.46 2.58 4.65 12.17 0.51 0.24
90 0.00 1.87 4.89 11.92 0.51 -1.94
120 1.84 2.81 6.11 14.36 1.52 0.24
180 0.69 2.34 4.65 12.90 1.52 -0.73
300 1.61 3.75 7.09 13.63 2.78 0.00 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs., 3 minute cure 300 Watt Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Table I
% STBPAF6-F/STTPE (75:25) Removeda
Time (sec) Solvent (Toluene:n-Hexane)b
100:0 80:20 60:40 40:60 20?80 0:100
0 0 0 0 0 0 0
30 0.46 50.25 -0.25 11.91 -0.75 -1.20
60 0.46 55.94 0.25 15.88 0.25 -1.45
90 0.00 56.44 1.01 16.63 -0.50 -1.69
120 1.84 55.94 -0.25 18.36 -0.50 -1.93
180 0.69 58.42 0.50 21.34 1.00 -0.72
300 1.61 58.42 1.51 21.09 0.75 -0.48 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs., 3 minute cure 300 Watt Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
The following tables, J and K, may be compared with Tables L and M and the effect of UV radiation on the resin is demonstrated.
Table J
% STBPAF6-F/STTPE (50:50) Removeda
Time (sec) Solvent (Toluene:Ethanol)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 99.15 99.71 92.59 98.27 19.50 -2.65
60 98.31 99.14 99.43 98.27 28.97 -1.47
90 100.28 100.57 97.44 100.00 35.65 -0.29
120 99.15 99.14 99.15 99.13 38.44 -0.59
180 99.44 100.29 100.28 100.29 45.96 0.59
300 100.28 100.00 100.57 100.29 101.11 1.77
a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs.
b) Weight % solutions.
Table K
% STBPAF6-F/STTPE (50:50) Removeda
Time (sec) Solvent (Toluene:n-Hexane)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 99.15 98.85 91.76 50.15 -4.20 -2.05
60 98.31 97.71 98.24 79.53 -1.20 -2.05
90 100.28 100.29 100.88 91.39 2.70 -2.35
120 99.15 97.99 97.94 93.47 8.41 -1.17
180 99.44 100.57 100.88 97.92 15.62 -0.88
300 100.28 100.00 100.00 97.63 16.52 -2.93 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs.
b) Weight % solutions.
Table L
% STBPAF6- F/STTPE (50:50) Removeda
Time (sec) Solvent (Toluene:Ethanol)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 3.08 4.39 5.90 4.29 0.88 1.18
60 1.68 7.31 8.26 3.71 0.59 0.29
90 2.80 10.23 10.62 6.29 0.88 1.18
120 1.68 10.53 10.32 5.71 1.47 -0.29
180 4.20 14.33 12.68 8.57 3.83 1.18
300 5.60 15.79 13.57 8.29 17.40 0.88
a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs., 3 minute cure 300 Watt Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Table M
% STBPAF6-F/STTPE (50:50) Removeda Time (sec) Solvent (Toluene:n-Hexane)b
100:0 80:20 60:40 40:60 20:80 0:100
0 0 0 0 0 0 0
30 3.08 7.78 13.89 11.02 -1.48 -0.91
60 1.68 13.47 24.07 17.85 -2.66 -2.73
90 2.80 15.27 32.10 25.20 -0.89 -1.82
120 1.68 15.27 37.04 31.50 0.30 -.091
180 4.20 15.27 41.98 37.01 2.07 0.00
300 5.60 15.87 42.90 40.16 1.78 -2.12 a) STBPAF6-F/STTPE coated on silicon wafer and soft baked at 25ºC for 18 Hrs., 3 minute cure 300 Watt Mercury Vapor Lamp with quartz/water filter.
b) Weight % solutions.
Example 21
STBPAF6-F resin of Example 7 and STTPE resin of Example 10 were dissolved in toluene to yield a solution of composition 42.0% STBPAF6-F, 14.0% STTPE and 44.0% toluene (ratio of 75:25 STBPAF6-F:STTPE). This solution was spin coated onto a silicon surface utilizing spin coating rates from 600 rpm to 2000 rpm for 60 seconds; and soft baked for 24 hours at 25ºC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with
toluene for 1 minute at 25ºC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25ºC to 219ºC ramp in 1 hour, held at 219ºC for 2.5 hours and then cooled to room temperature.
The film thickness and sidewall angle of the photocured polymer were analyzed utilizing a Sloan Technology Corporation Dektak 3030 profilometer with the following results:
Table N
Spin Speed Film thickness Sidewall Angle
(rpm) (μm)
600 14.0 37
600 15.5 30
600 15.0 40
600 15.8 22
700 16.0 25
700 15.3 35
700 15.3 9
45
700 18.3
800 14.8 35
800 15.0 40
800 14.3 42
800 12.8 42
1000 12.8 29
1000 13.7 30
1000 13.0 29
1500 10.5 25
1500 10.8 28
2000 9.0 28
2000 9.2 26
00 8.8 28
20
2000 9.0 22
Example 22
STBPAF6-F resin of Example 7 and STTPE resin of Example 10 were dissolved in toluene to yield a solution of composition ratio of 75:25 STBPAF6-F:STTPE, with ranges of solids contents from 57.4 % to 70.4 % resins and 29.6% to 42.6 % toluene. These solutions
were spin coated onto a silicon surface utilizing spin coating rates from 700 rpm to 1500 rpm for 60 seconds; and soft baked for 24 hours at 25ºC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25ºC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25ºC to 220ºC ramp in 1 hour, held at 220ºC for 2.5 hours and then cooled to room temperature.
The film thickness of the photocured polymer was analyzed employing a Taylor-Hobson Talysurf 10 profilometer with the following results: Table O
ST-Resin Viscosity Spin Speed Film thickness
(Wt.%) (mPa 5) (rpm) (μm) 57.4 11 700 7.8
57.4 11 1000 6.1
57.4 11 1500 5.1
61.2 16 700 9.7
61.2 16 1500 6.6
70.4 216 700 19.0
70.4 216 1000 14.0
70.4 216 1500 12.4
Example 23
STBPAF6-F resin of Example 7 and STTPE resin of Example 10 were dissolved in toluene to yield a solution of composition ratio of 75:25 STBPAF6-F:STTPE,
with ranges of solids contents from 57.4 % to 70.4 % resins and 29.6% to 42.6 % toluene. These solutions were spin coated onto a silicon surface utilizing spin coating rates from 700 rpm to 1500 rpm for 60 seconds; and soft baked for 24 hours at 25ºC under vacuum. The samples were then exposed for 3 minutes to UV irradiation with a 300 watt mercury lamp employing an USAF Test Pattern and a quartz/water filter. The photocured polymer was then developed with toluene for 1 minute at 25ºC. The air dried substrate was hard baked employing a cure cycle under vacuum of 25ºC to 220ºC ramp in 1 hour, held at 220ºC for 2.5 hours and then cooled to room temperature. The samples were then metallized via ion-beam sputtering to yield a metal film of thickness 5000 to 10000 A.
The adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal shock cycling. A thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55ºC for 10 minutes, -55ºC to 125ºC over a rapid ramp, hold at 125ºC for 10 minutes. In the following tables the ratio given means that for 25 squares of the metal, some to all of them were not removed by the tape. That is, 25/25 means that all the squares remained adhered to the dielectric polymer while 5/25 means that 20 squares of metal were removed.
Table P
Adhesion Measurements Results
Metal Before Thermal After 92 After 184 Layer Shock Cycling Cycles Cycles
2.5 10.0 2.5 10.0 2.5 10.0 lb.(b) lb. lb. lb. lb. lb.
Chromium 25/25 25/25 25/25 25/25 25/25 25/25
Passed Passed Passed Passed Passed Passed
Chromium 0/25 - - - - - - - - - - - - - - - - - - - - - - - - - Passed
Copper 19/25 19/19 0/19 - - - - - - - - - - - - - - -
Passed Passed Passed
Copper 1/25 0/1 - - - - - - - - - - - - - - - - - - - - Passed Passed
Aluminum 25/25 25/25 24/25 25/25 a a
Passed Passed Passed Passed
Aluminum 25/25 25/25 a a a a
Passed Passed
Gold 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed
Gold 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed
Nickel 1/25 0/1 - - - - - - - - - - - - - - - - - - - - Passed Passed
Nickel 0/25 - - - - - - - - - - - - - - - - - - - - - - - - -
Passed
a) Sample not evaluated.
b) Tape rating in lb. for 1/2 inch wide tape.
Example 24
STBPAF6-F resin of Example 5 and STTPE resin of Example 10 were dissolved in toluene to yield a solution of composition ratio 75:25 STBPAF6-F:STTPE, with solids contents of 42.0% STBPAF6-F, 14.0% STTPE and 44.0% toluene. This solution was spin coated onto an alumina or silicon substrate (surface) utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60ºC under nitrogen. The polymer was hard baked employing a cure cycle under nitrogen of 25ºC to 220ºC ramp in 3 hour, held at 220ºC for 2.0 hours and then ramped from 220ºC to 25ºC in 4 hours.
The adhesion was evaluated via a calibrated "Scotch-Tape" adhesion test before and after thermal shock cycling. A thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55ºC for 10 minutes, -55ºC to 125ºC over a rapid ramp, hold at 125ºC for 10 minutes. Table Q
Adhesion Measurements Results
Substrate Before Thermal After 92 Cycles
Shock Cycling
2.5 lb. 10.0 lb. 2.5 lb. 10.0 lb.
Alumina 0/25 Passed - - - - - - - - - - - - - - - Silicon 0/25 Passed - - - - - - - - - - - - - - -
Example 25
STBPAF6-F resin of Example 5 and STTPE resin of Example 10 were dissolved in toluene to yield a solution of composition ratio 75:25 STBPAF6-F:STTPE, with solids contents of 42.0% STBPAF6-F, 14.0% STTPE and 44.0% toluene. This solution was spin coated onto an alumina substrate (surface) onto which had been ion-sputtered with a metal film of thickness 5000A, utilizing spin coating rate of 1000 rpm for 60 seconds; soft baked for 1 hour at 60ºC under nitrogen. The polymer was hard baked employing a cure cycle under nitrogen of 25ºC to 220ºC ramp in 3 hours, held at 220ºC for 2.0 hours and then ramped from 220ºC to 25ºC in 4 hours.
The adhesion was evaluated via a calibrated
"Scotch-Tape" adhesion test before and after thermal shock cycling. A thermal shock cycle encompasses the following thermal cycling of the sample: hold at -55ºC for 10 minutes, -55ºC to 125ºC over a rapid ramp, hold at 125ºC for 10 minutes.
Table R
Adhesion Measurements Results Metal Before Thermal After 92 Cycles
Layer Shock Cycling
2.5 lb. 10.0 lb. 2.5 lb. 10.0 lb.
Chromium 25/25 Passed 25/25 Passed a a
Nickel 0/25 Passed(b) - - - - - - - - - - - - - - - Copper 0/25 Passed(b) - - - - - - - - - - - - - - -
Aluminum 3/25 Passed 0/3 Passed - - - - - - - - - -
Gold 0/25 Passed(b) - - - - - - - - - - - - - - - a) Sample not evaluated.
b) Failed at polymer to metal interface.
As can be seen with the above Examples 23-25 chromium adhered particularly well to the dielectric polymers and thus can serve as a suitable base for copper layers which provide conductive patterns in the multilevel structures.
Claims
1. A method of forming a polymer on a substrate in a predetermined pattern comprising:
(a) coating a substrate with a prepolymer which is an ether of the oligomeric condensation product of a dihydric phenol and formaldehyde having the formula
where the recurring unit Q has the structure.
and n is an integer from 1 to 10;
s is 1;
each X is C(CF3)2;
each R1 and R2 is independently selected from the group consisting of hydrogen, alkyl and alkoxy moieties containing 1 to 10 carbon atoms, phenyl and phenoxy;
a and b are independently 0 or integers from 1 to
4;
Z is Cl or Br;
E is selected from the group consisting of the vinylbenzyl moiety, alkyl moieties containing 1 to 10 carbon atoms, or benzyl, subject to the constraint that at least 50% of all E's are the vinylbenzyl moiety;
(b) irradiating the coated prepolymer of (a) through a masking pattern to selectively crosslink the portion of said coating being irradiated;
(c) selectively dissolving the non-irradiated part of the prepolymer coating of (a); and
(d) curing the crosslinked portion of the prepolymer coating by heating at a temperature in the range of 100ºC to 300ºC for a time sufficient to further crosslink said crosslinked coating and to transform the prepolymer to an infusible glassy solid.
2. A method of forming a polymer on a substrate in a predetermined pattern comprising:
a. coating a substrate with a mixture of prepolymers which comprises
(1) an ether of the oligomeric condensation product of a dihydric phenol and formaldehyde having the formula
and n is an integer from 1 to 10;
s is 1;
each X is C(CF3)2;
each R1 and R2 is independently selected from the group consisting of hydrogen, alkyl and alkoxy moieties containing 1 to 10 carbon atoms, phenyl and phenoxy;
a and b are independently 0 or integers from 1 to
4;
Z is Cl or Br;
E is selected from the group consisting of the vinylbenzyl moiety, alkyl moieties containing 1 to 10 carbon atoms, or benzyl, subject to the constraint that at least 50% of all E's are the vinylbenzyl moiety; and
(2) an ether of the oligomeric condensation product of
(a) 1 molar proportion of a dialdehyde and
(b) from about 3 to about 4 molar proportions of a phenol; when the dialdehyde is selected from the group consisting of OHC(CH2)mCHO, where m = 0 or an integer from 1 to 6,
cyclopentanedialdehyde, phthalaldehyde, isophthalaldehyde, terephthalaldehyde, hexahydrophthalaldehyde, cycloheptanedialdehyde, hexahydroisophthalaldehyde, hexahydroterephthalaldehyde, and cyclooctanedialdehyde;
where the phenol has the structure R3C6H4 and R3 is hydrogen or an alkyl group containing from 1 to about 10 carbon atoms; and where the phenol residue of said oligomeric condensation product is etherified with one or more substituents to afford ether moieties randomly selected from the group consisting of vinylbenzyl, alkyl moieties containing from 1 to 10 carbon atoms, cycloalkyl moieties from
5 to 10 carbon atoms, and benzyl, with the ratio of vinylbenzyl to other moieties being from 1:1 to about 6:1;
c. irradiating the coated prepolymer of (a) through a masking pattern to selectively crosslink the portion of said coating being irradiated;
d. selectively dissolving the non-irradiated part of the prepolymer coating of (a); and e. curing the crosslinked portion of the prepolymer coating by heating at a temperature in the range of 100ºC to 300ºC for a time sufficient to further crosslink said crosslinked coating and to transform the prepolymer to an infusible glassy solid.
3. The method of Claims 1 or 2 wherein R1 and R2 are hydrogen or alkyl with 1-10 carbon atoms.
4. The method of Claims 1 or 2 wherein R1 and R2 are methyl or t-butyl moieties.
5. The method of Claims 1 or 2 wherein Z is Br and a and b are 1-4.
6. The method of Claims 1 or 2 wherein E is at least 70-100% vinyl benzyl moieties and the remaining E's are alkyl with 1-10 carbon atoms.
7. The method of Claim 2 wherein the dialdehyde is OHC(CH2)mCHO and m is 0 or an integer from 1 to 6.
8. The method of Claim 2 where R3 is hydrogen or methyl.
9. The method of Claim 2 wherein the ether moieties of condensation product (2) are about 70% vinyl benzyl and 30% propyl.
10. The method of Claim 2 wherein the molecular weight of condensation product (2) is 400 to 6000.
11. An electronic interconnect structure comprising the cured polymer produced by the method of Claims 1 or
2.
12. An electronic interconnect structure of Claim 11 wherein said cured polymer is adhered to a chromium metal layer.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US629,786 | 1990-12-18 | ||
US07/629,786 US5120569A (en) | 1990-12-18 | 1990-12-18 | Method of forming a polymer on a substrate |
US629,514 | 1990-12-18 | ||
US07/629,514 US5139880A (en) | 1990-12-18 | 1990-12-18 | Photodefinable interlevel dielectrics |
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WO1992011578A1 true WO1992011578A1 (en) | 1992-07-09 |
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ID=27090963
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855375A (en) * | 1987-08-21 | 1989-08-08 | Allied-Signal Inc. | Styrene terminated multifunctional oligomeric phenols as new thermosetting resins for composites |
WO1989012846A1 (en) * | 1988-06-24 | 1989-12-28 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
-
1991
- 1991-12-11 WO PCT/US1991/009391 patent/WO1992011578A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855375A (en) * | 1987-08-21 | 1989-08-08 | Allied-Signal Inc. | Styrene terminated multifunctional oligomeric phenols as new thermosetting resins for composites |
WO1989012846A1 (en) * | 1988-06-24 | 1989-12-28 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
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