EP0517594B1 - Machine de polissage à bande microabrasive tendue et à tête support de plaquette perfectionnée - Google Patents

Machine de polissage à bande microabrasive tendue et à tête support de plaquette perfectionnée Download PDF

Info

Publication number
EP0517594B1
EP0517594B1 EP92401532A EP92401532A EP0517594B1 EP 0517594 B1 EP0517594 B1 EP 0517594B1 EP 92401532 A EP92401532 A EP 92401532A EP 92401532 A EP92401532 A EP 92401532A EP 0517594 B1 EP0517594 B1 EP 0517594B1
Authority
EP
European Patent Office
Prior art keywords
machine according
wafer
disk
polishing
roll
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP92401532A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0517594A1 (fr
Inventor
André Baldy
Gérard Barrois
Henry Blanc
Marcel Dominiak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR9106866A external-priority patent/FR2677288B1/fr
Priority claimed from FR9106869A external-priority patent/FR2677293A1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP0517594A1 publication Critical patent/EP0517594A1/fr
Application granted granted Critical
Publication of EP0517594B1 publication Critical patent/EP0517594B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/004—Machines or devices using grinding or polishing belts; Accessories therefor using abrasive rolled strips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/18—Accessories
    • B24B21/20—Accessories for controlling or adjusting the tracking or the tension of the grinding belt

Definitions

  • the present invention relates to a polishing machine with a tensile microabrasive band and an improved wafer support head.
  • a machine according to the preamble of claim 1 is known, for example, from PATENT ABSTRACTS OF JAPAN vol. 8, no. 83 (M-290) (1520) April 17, 1984 & JP-A-59 001 151.
  • the invention finds a particular application in the polishing of microelectronic components integrated in semiconductor wafers (in silicon for example). They can be, in particular, magnetic writing and reading heads.
  • the first document relates to heads with a so-called “horizontal” structure - because formed by a stack of layers deposited on the upper face of a semiconductor wafer - and the second to heads with a so-called “vertical” structure - because formed of layers deposited on the edge of such a wafer.
  • micro-machining carried out on such wafers consists, in the first case, in leveling (or “planarizing") and in polishing various intermediate sub-assemblies obtained during the production process, in defining an air gap and in bringing the assembly of the head in the general plane of the substrate, also called the flight plane.
  • the purpose of micro-machining is to define an air gap and to adjust the shape of the flight pads.
  • the machine which is the subject of the present invention is above all intended for polishing assemblies or sub-assemblies corresponding to the first category (horizontal heads) because it is in this case that the technological problems are the most difficult.
  • Figure 1 shows, by way of example of a polishing piece, a magnetic writing and reading head in a horizontal structure.
  • the assembly represented corresponds to the last stage of production before final polishing.
  • This set includes a silicon substrate 10 in which a box has been etched, a magnetic circuit 12 made of iron-nickel alloy, a double coil 14 made of copper, a layer of silica 16 3 to 6 ”m thick, a spacer nonmagnetic 18 in silica approximately 1 ”thick and two upper pole pieces 20 in iron-nickel.
  • the final polishing plan is marked in broken lines and referenced 22.
  • the material removal relates to the pole pieces 20 and to the protrusions 23 in silica. In order not to alter the magnetic circuit, this removal must not reduce the thickness of the uniform layer of silica by more than 0.3 ”m.
  • the final polishing plan defines the flight plan of the head.
  • Two such heads are generally placed side by side on two parallel strips called "skis", defining two flight plans, in a general catamaran structure.
  • Figure 2 first of all, illustrates the known principle of lapping with liquid loaded with abrasive grains.
  • the plate 10 and its protuberances 25 are placed opposite a polishing plate 23 and the liquid 24, loaded with abrasive grains, forms a film between the plate and the reference plane.
  • the translational movement of the insert causes abrasion of the growths.
  • part a shows an outgrowth 25a before polishing, the shape of which corresponds very substantially to that encountered in the case of integrated magnetic heads, as will be seen more clearly below.
  • This profile takes the form 25b after the start of polishing (part b ) and, finally, the form 25c (part c ) at the end of polishing.
  • part c the form 25c at the end of polishing.
  • FIG. 4 Another known technique consists in using a microabrasive plastic film bonded to a reference plate.
  • the adhesive layer has a thickness of about 100 »m.
  • the thickness of the sheet is about 50 to 75 ”m.
  • the assembly therefore has a thickness of approximately 150 to 175 "m.
  • FIG. 5 shows this abrasive means with a plate 10 and its protrusions 25 to be polished. It is observed that the presence of the protuberances and the relatively large thickness of the polishing layer cause it to crease, by local compression of the sheet and crushing of the glue points. In this case again, the polish finally obtained is not satisfactory.
  • Figures 6 schematically show the profile of a polished pad 29, before polishing ( Figure 6a) and after polishing ( Figure 6b).
  • Polishing machines are also known which use a microabrasive film, not glued to a reference surface but stretched over a plate. Such machines are described in documents DE-U-8 717 353 and DOS 26 37 343. These machines comprise a supply coil and a take-up coil between which passes, in a step-by-step movement, the microabrasive strip. This strip passes over a piece of soft material.
  • the polishing piece which in this case is a base plate, is held by a head animated by a rotational movement,
  • a pneumatic means arranged at the lower part of the machine, allows to press the microabrasive band under the base of the plate, so that it comes to deform the abrasive film and sink into the soft piece.
  • the tension of the strip is obtained by means of pliers or jaws which simultaneously make it possible to advance the strip step by step.
  • a head with rotary movement such as that of the cited documents, would not be suitable for polishing semiconductor wafers since then the center of the wafer would not be polished.
  • a simple rotary movement is only suitable for ring pieces, such as the base of plates.
  • microabrasive sheets (or “strips” or “films) which can be used in the invention can be commercial sheets, such as those sold by the company 3M.
  • the film called “Imperial Lapping Film (ILF)" of thickness 12 or 25 or 35 or 50 or 75 "m may be suitable. This film is available on roll.
  • the polishing means comprises a microabrasive sheet or strip 33 stretched and pressed against a reference plate 30.
  • the sheet 33 is stretched by means 35, 35 ′ arranged on either side of the plate 30.
  • FIGS. 8a and 8b illustrate a particular embodiment of the means 35, 35 ′ able to tension the abrasive sheet properly and to allow the slow scrolling of it over the board.
  • the machine is shown in top view on part a and in side view on part b .
  • FIGS. 8a and 8b stick to the reference plate and to the various means for stretching the microabrasive strip on this plate and making it run.
  • the machine comprises a first coil 40 and a second coil 50 arranged on either side of the reference plate 30. On these coils is wound a microabrasive strip 33, which is thus stretched between the two coils.
  • the first coil 40 is a supply coil equipped with means for exerting a resistant torque; the second coil 50 is a take-up coil controlled by a motor.
  • the microabrasive strip 33 can thus pass from the first reel 40 to the second 50, while scrolling above the reference plate 30, which allows the renewal of the abrasive surface.
  • the two coils 40, 50 are arranged under the upper face of the reference plate 30, two drums 41, 51 being arranged between the coils and the reference plate 30.
  • the microabrasive strip 33 passes over these drums 41, 51 at the outlet of the supply reel 40 and at the entry into the take-up reel 50.
  • These drums are preferably arranged a little below the upper face of the plate 30 so that the microabrasive strip 33 makes a slight angle ⁇ with the horizontal at its entry and exit of the tray, which improves its contact with it.
  • the supply reel 40 is connected to a frame 60 by two ball bearings 41, 42 and two slides 43, 44 whose ends come to bear on two pressure sensors 45, 46 linked to the frame by two adjustable stops 47, 48.
  • the adjustment of the stops makes it possible to balance the tension of the strip over its entire width.
  • the means for exerting a resistive torque on the supply reel 40 can be constituted, in a first variant, by an annular motor 62 mounted directly on one of the bearings 41 or 42, at the end of the slide 43. Means 64 for controlling the this engine are also provided. In a second variant, these means consist of a motor 66 separate from the supply coil 40 and by a transmission belt 68 between this motor 66 and the supply coil 40. The stretched strand 68a of the belt 68 is in a plane perpendicular to the slides 43, 44. Means 64 for controlling this motor are also provided.
  • the two pressure sensors 45, 46 arranged at the ends of the two slides 43, 44, are connected to the control means 64 of the motors 62 or 66 exerting a resistant torque on the supply reel 40.
  • the take-up reel 50 is controlled in rotation by a geared motor 70.
  • This reel can be connected to the geared motor 70 by a means 72 for interrupting the transmission, such as a mechanical coupling or an electromagnetic clutch.
  • sample support head which cooperates with the stretched microabrasive strip. to allow polishing under the conditions set out above.
  • the sample-holder head comprises a flexible disc 142 whose role is illustrated in FIG. 9.
  • the force F applied vertically on the rigid part 140 has the effect of pressing the assembly on the polishing plane 130, the raised patterns 143 coming to bear on this plane (part b ).
  • the bearing force of these reliefs on the polishing plane 130 is unevenly distributed: thus forces F1, at the periphery, relatively large and forces F2, at the center, relatively weak in the example illustrated.
  • the application of a greater force on the rigid part 140 has the effect of causing the wafer 144 to penetrate into the flexible disc 142 (part c ).
  • the depression conforms to the initial deformation of the insert and makes it possible to compensate for the latter.
  • the force F3 exerted by each relief on the polishing plane is then substantially the same over the entire surface of the polishing plane.
  • each protuberance has the same linear speed, whatever its position on the plate.
  • each projection receives a load proportional to its height. Then, after partial leveling, all the growths receive an identical load. We can then consider that the contact is correct at each overshoot. On the other hand, when the height of the overhangs decreases, the distance separating the main plane of the insert and the running-in plane decreases; as the contact between two planes is never perfect, phenomena due to the viscosity of the air appear and tend to cause partial separation of the plate. So we must decrease the speed of movement and / or increase the pressure on the support of the wafer.
  • the removal of material according to the invention excludes the use of any coolant or particle drainage.
  • the work is therefore carried out "dry". If necessary, a vacuum can be created in the work area or the air can be replaced by a light gas such as helium.
  • Determining the characteristics of the flexible disk to be used according to the invention first passes through that of the minimum force Po to be exerted on the wafer to bring the geometry of the front face to match the reference plane.
  • This load Po applied to the wafer will be distributed in a completely heterogeneous manner. Indeed, this load will be concentrated in the middle, the edges of the plate barely coming into contact with the reference plane without transmission of forces.
  • a good approximation consists in taking into account the most difficult relief to bring into contact with the reference plane, by using the preceding formula. This determination amounts to comparing the ratios f / r2 in an area of radius "r" affected by this arrow. Once the maximum ratio has been determined, the effort necessary to recover this deformation is reduced to the entire surface of the flexible disk.
  • the curve in FIG. 10 shows the depression (on the ordinate) as a function of the pressure (on the abscissa), the load being assumed to be distributed over a unit surface.
  • Line A does not take into account the finite thickness of the disc (in other words, it assumes an infinite thickness).
  • Curve B takes this thickness into account.
  • a finite thickness leads to a "hooking" of the material constituting the disc (in general an elastomer).
  • the load P1 gives the value of the pressure on the unit surface chosen to draw the curve. This value is plotted on the curve to obtain the corresponding arrow, ie "f1".
  • the penetration of the flexible material is variable depending on the thickness of the wafer.
  • the load P1 leads to a local pressure proportional to the thickness of the plate at a given point.
  • the support shown in Figure 11 first of all, comprises a rigid body in two parts 150-152 on which the flexible disc 142 comes to take support, and a device 158 allowing three rotations along three perpendicular axes, two of these rotations, used to correctly position and orient the wafer 44 on the reference plane, which may be partial (or of limited amplitude), the third being complete according to an axis perpendicular to the reference plane.
  • the device 158 allows the connection with a vertical axis 160.
  • This device is preferably a spherical bearing or a needle bearing associated with a spherical bearing.
  • the rigid body 150 is surrounded by a peripheral ring 162 in which a recess 163 has been machined. The height of the step 163 is less than the thickness of the plate and its diameter is slightly greater than that of the plate.
  • the plate 44 comes to bear in this recess 163.
  • the ring piece 162 is connected to the rigid body 150 by posts 164 and springs 166.
  • the vertical force applied to the axis 160 does not pass through the peripheral ring 162 but through the ball joint 158, the rigid body 150 and the disc 142.
  • the ring 162 only serves to drive the plate 44 in the movement of circular translation necessary for polishing, movement produced by the horizontal force driving the support (produced for example by the eccentric 37 in FIG. 7).
  • the rigid body 150-152 is pierced with a channel 170 connected by a tube 172 to a vacuum machine not shown. This arrangement keeps the wafer 44 in place during the phases where the support is not pressed against the polishing plane.
  • FIG. 12 shows a detail of the peripheral ring 162, with its recess 163 receiving the plate 44.
  • the ring 162 to which a circular groove 161 is added, which is pierced with a channel 174 connected by a tube 176 very flexible to a vacuum machine not shown.
  • This variant corresponds to polishing requiring greater torque forces than in the case of FIG. 11.
  • the peripheral ring consists of a thin ring 180 cut for example from a steel sheet, this thin ring being rigid in its plane but flexible in the perpendicular direction.
  • This thin ring 180 is coated in a very flexible material 182, for example silicone.
  • Such an annular part is sufficiently rigid in the horizontal plane to transmit the cutting forces, while being flexible enough vertically to match the defects of the insert.
  • FIG. 14 shows, in section, a sub-assembly corresponding to a magnetic writing and reading head in a horizontal structure, of the kind which has already been mentioned in connection with FIG. 1.
  • the sub-assembly of FIG. 14 essentially comprises a silicon substrate 100, two edges of the casing 102 in silica, two vertical pads 104 in iron-nickel. This involves polishing this sub-assembly according to a plane 106 before continuing the operations of forming the upper pole piece.
  • the profile After polishing, the profile has the shape of part b of FIG. 15.
  • the whole of the recorded interval measures 4 mm (which means that the statement relates to the entire "ski" carrying the head).
  • the scale On the ordinate, the scale is in tens of nanometers.
  • the residual overshoot in the natural curvature of the "ski” is less than or equal to 30 nm (this curvature being a fraction of the deformation of the substrate).
  • FIG. 16 shows the head after the operations for forming the non-magnetic spacer 110 and the upper pole pieces 112 made of iron-nickel. Reliefs 114 appear in the center of the head. The final polishing plan is referenced 116.
  • Part b of Figure 17 shows the reading after polishing. On the abscissa, the units are still in micrometers and on the ordinate, in tens of nanometers. No residual overshoot is detected, we only measure the natural curvature of the pad (this curvature being a fraction of the deformation of the substrate).
EP92401532A 1991-06-06 1992-06-04 Machine de polissage à bande microabrasive tendue et à tête support de plaquette perfectionnée Expired - Lifetime EP0517594B1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
FR9106866 1991-06-06
FR9106866A FR2677288B1 (fr) 1991-06-06 1991-06-06 Machine de polissage a feuille microbrasive tendue.
FR9106869 1991-06-06
FR9106869A FR2677293A1 (fr) 1991-06-06 1991-06-06 Machine de polissage a tete support de plaquettes perfectionnee.

Publications (2)

Publication Number Publication Date
EP0517594A1 EP0517594A1 (fr) 1992-12-09
EP0517594B1 true EP0517594B1 (fr) 1995-12-13

Family

ID=26228728

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92401532A Expired - Lifetime EP0517594B1 (fr) 1991-06-06 1992-06-04 Machine de polissage à bande microabrasive tendue et à tête support de plaquette perfectionnée

Country Status (4)

Country Link
US (1) US5335453A (ja)
EP (1) EP0517594B1 (ja)
JP (1) JPH05177523A (ja)
DE (1) DE69206685T2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503131B1 (en) 2001-08-16 2003-01-07 Applied Materials, Inc. Integrated platen assembly for a chemical mechanical planarization system
US6592439B1 (en) 2000-11-10 2003-07-15 Applied Materials, Inc. Platen for retaining polishing material
US7648622B2 (en) 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447464A (en) * 1993-08-06 1995-09-05 The Whitaker Corporation Automated method of finishing the tip of a terminated optical fiber
US5938504A (en) * 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
US5733175A (en) 1994-04-25 1998-03-31 Leach; Michael A. Polishing a workpiece using equal velocity at all points overlapping a polisher
US5607341A (en) 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
ATE186001T1 (de) 1994-08-09 1999-11-15 Ontrak Systems Inc Linear poliergerät und wafer planarisierungsverfahren
US5575707A (en) * 1994-10-11 1996-11-19 Ontrak Systems, Inc. Polishing pad cluster for polishing a semiconductor wafer
JPH08195363A (ja) 1994-10-11 1996-07-30 Ontrak Syst Inc 流体軸受を有する半導体ウェーハポリシング装置
US5571044A (en) * 1994-10-11 1996-11-05 Ontrak Systems, Inc. Wafer holder for semiconductor wafer polishing machine
US5593344A (en) 1994-10-11 1997-01-14 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings and drive systems
US7937312B1 (en) 1995-04-26 2011-05-03 Ebay Inc. Facilitating electronic commerce transactions through binding offers
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
ZA965340B (en) * 1995-06-30 1997-01-27 Interdigital Tech Corp Code division multiple access (cdma) communication system
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
GB2347790B (en) * 1995-11-14 2000-11-01 Nec Corp Method of regulating a retainer ring of a polishing apparatus to an appropriate configuration
JP3129172B2 (ja) * 1995-11-14 2001-01-29 日本電気株式会社 研磨装置及び研磨方法
US5961372A (en) 1995-12-05 1999-10-05 Applied Materials, Inc. Substrate belt polisher
JPH09225819A (ja) * 1996-02-21 1997-09-02 Shin Etsu Handotai Co Ltd 被加工物の保持機構
US5916012A (en) * 1996-04-26 1999-06-29 Lam Research Corporation Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher
US6413156B1 (en) 1996-05-16 2002-07-02 Ebara Corporation Method and apparatus for polishing workpiece
EP0807492B1 (en) * 1996-05-16 2003-03-19 Ebara Corporation Method for polishing workpieces and apparatus therefor
JP2000315665A (ja) 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5886535A (en) * 1996-11-08 1999-03-23 W. L. Gore & Associates, Inc. Wafer level burn-in base unit substrate and assembly
US6312319B1 (en) 1997-04-04 2001-11-06 Timothy J. Donohue Polishing media magazine for improved polishing
US6244946B1 (en) 1997-04-08 2001-06-12 Lam Research Corporation Polishing head with removable subcarrier
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6110025A (en) * 1997-05-07 2000-08-29 Obsidian, Inc. Containment ring for substrate carrier apparatus
US6224465B1 (en) 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6116990A (en) * 1997-07-25 2000-09-12 Applied Materials, Inc. Adjustable low profile gimbal system for chemical mechanical polishing
US6113479A (en) 1997-07-25 2000-09-05 Obsidian, Inc. Wafer carrier for chemical mechanical planarization polishing
US6336845B1 (en) 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
US6113465A (en) * 1998-06-16 2000-09-05 Speedfam-Ipec Corporation Method and apparatus for improving die planarity and global uniformity of semiconductor wafers in a chemical mechanical polishing context
US6220934B1 (en) 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
US6086460A (en) 1998-11-09 2000-07-11 Lam Research Corporation Method and apparatus for conditioning a polishing pad used in chemical mechanical planarization
US6468139B1 (en) * 1998-12-01 2002-10-22 Nutool, Inc. Polishing apparatus and method with a refreshing polishing belt and loadable housing
US6103628A (en) * 1998-12-01 2000-08-15 Nutool, Inc. Reverse linear polisher with loadable housing
US7425250B2 (en) * 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
US6464571B2 (en) 1998-12-01 2002-10-15 Nutool, Inc. Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein
US6589105B2 (en) 1998-12-01 2003-07-08 Nutool, Inc. Pad tensioning method and system in a bi-directional linear polisher
US6241583B1 (en) 1999-02-04 2001-06-05 Applied Materials, Inc. Chemical mechanical polishing with a plurality of polishing sheets
US6244935B1 (en) 1999-02-04 2001-06-12 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet
US6475070B1 (en) * 1999-02-04 2002-11-05 Applied Materials, Inc. Chemical mechanical polishing with a moving polishing sheet
US6491570B1 (en) 1999-02-25 2002-12-10 Applied Materials, Inc. Polishing media stabilizer
US6358128B1 (en) 1999-03-05 2002-03-19 Ebara Corporation Polishing apparatus
US6354922B1 (en) 1999-08-20 2002-03-12 Ebara Corporation Polishing apparatus
US6227950B1 (en) * 1999-03-08 2001-05-08 Speedfam-Ipec Corporation Dual purpose handoff station for workpiece polishing machine
US6135859A (en) * 1999-04-30 2000-10-24 Applied Materials, Inc. Chemical mechanical polishing with a polishing sheet and a support sheet
EP1052059A3 (en) * 1999-05-03 2001-01-24 Applied Materials, Inc. Method for chemical mechanical planarization
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
US6343975B1 (en) 1999-10-05 2002-02-05 Peter Mok Chemical-mechanical polishing apparatus with circular motion pads
US6626744B1 (en) 1999-12-17 2003-09-30 Applied Materials, Inc. Planarization system with multiple polishing pads
US6431959B1 (en) 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US6306019B1 (en) 1999-12-30 2001-10-23 Lam Research Corporation Method and apparatus for conditioning a polishing pad
US6562184B2 (en) 2000-02-29 2003-05-13 Applied Materials, Inc. Planarization system with multiple polishing pads
US6517414B1 (en) 2000-03-10 2003-02-11 Appied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US6616801B1 (en) 2000-03-31 2003-09-09 Lam Research Corporation Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path
US6626743B1 (en) 2000-03-31 2003-09-30 Lam Research Corporation Method and apparatus for conditioning a polishing pad
US6261959B1 (en) 2000-03-31 2001-07-17 Lam Research Corporation Method and apparatus for chemically-mechanically polishing semiconductor wafers
US6428394B1 (en) 2000-03-31 2002-08-06 Lam Research Corporation Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed
US6402591B1 (en) 2000-03-31 2002-06-11 Lam Research Corporation Planarization system for chemical-mechanical polishing
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US6435941B1 (en) 2000-05-12 2002-08-20 Appllied Materials, Inc. Apparatus and method for chemical mechanical planarization
US6500056B1 (en) 2000-06-30 2002-12-31 Lam Research Corporation Linear reciprocating disposable belt polishing method and apparatus
US6361414B1 (en) 2000-06-30 2002-03-26 Lam Research Corporation Apparatus and method for conditioning a fixed abrasive polishing pad in a chemical mechanical planarization process
US6520833B1 (en) * 2000-06-30 2003-02-18 Lam Research Corporation Oscillating fixed abrasive CMP system and methods for implementing the same
US6495464B1 (en) 2000-06-30 2002-12-17 Lam Research Corporation Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
US6626736B2 (en) * 2000-06-30 2003-09-30 Ebara Corporation Polishing apparatus
US6645046B1 (en) 2000-06-30 2003-11-11 Lam Research Corporation Conditioning mechanism in a chemical mechanical polishing apparatus for semiconductor wafers
US6435952B1 (en) 2000-06-30 2002-08-20 Lam Research Corporation Apparatus and method for qualifying a chemical mechanical planarization process
US6419559B1 (en) 2000-07-10 2002-07-16 Applied Materials, Inc. Using a purge gas in a chemical mechanical polishing apparatus with an incrementally advanceable polishing sheet
US6520841B2 (en) 2000-07-10 2003-02-18 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet
US6488565B1 (en) 2000-08-29 2002-12-03 Applied Materials, Inc. Apparatus for chemical mechanical planarization having nested load cups
US6561884B1 (en) 2000-08-29 2003-05-13 Applied Materials, Inc. Web lift system for chemical mechanical planarization
US6755723B1 (en) 2000-09-29 2004-06-29 Lam Research Corporation Polishing head assembly
US6482072B1 (en) 2000-10-26 2002-11-19 Applied Materials, Inc. Method and apparatus for providing and controlling delivery of a web of polishing material
US6793565B1 (en) 2000-11-03 2004-09-21 Speedfam-Ipec Corporation Orbiting indexable belt polishing station for chemical mechanical polishing
US6612914B2 (en) * 2000-12-14 2003-09-02 Applied Materials Inc. Platen with lateral web tensioner
US6875091B2 (en) 2001-01-04 2005-04-05 Lam Research Corporation Method and apparatus for conditioning a polishing pad with sonic energy
US6554688B2 (en) 2001-01-04 2003-04-29 Lam Research Corporation Method and apparatus for conditioning a polishing pad with sonic energy
US6752698B1 (en) 2001-03-19 2004-06-22 Lam Research Corporation Method and apparatus for conditioning fixed-abrasive polishing pads
US6887136B2 (en) * 2001-05-09 2005-05-03 Applied Materials, Inc. Apparatus and methods for multi-step chemical mechanical polishing
US6767427B2 (en) * 2001-06-07 2004-07-27 Lam Research Corporation Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process
JP2004528998A (ja) * 2001-06-12 2004-09-24 ナトゥール・インコーポレイテッド 被加工物を二方向に研磨するための改良された方法及び装置
US6645052B2 (en) * 2001-10-26 2003-11-11 Lam Research Corporation Method and apparatus for controlling CMP pad surface finish
US6939203B2 (en) 2002-04-18 2005-09-06 Asm Nutool, Inc. Fluid bearing slide assembly for workpiece polishing
US7025660B2 (en) 2003-08-15 2006-04-11 Lam Research Corporation Assembly and method for generating a hydrodynamic air bearing
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
CN101990703B (zh) * 2008-04-25 2012-11-21 应用材料公司 高产量化学机械抛光系统
US20130115862A1 (en) * 2011-11-09 2013-05-09 Applied Materials, Inc. Chemical mechanical polishing platform architecture
US9950404B1 (en) 2012-03-29 2018-04-24 Alta Devices, Inc. High throughput polishing system for workpieces
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
CN107378695B (zh) * 2017-08-09 2023-06-27 南京林业大学 一种整竹筒连续去青装置
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
RU2768435C1 (ru) * 2021-03-26 2022-03-24 Общество с ограниченной ответственностью "ТехноТерм-Саратов" Способ полирования поверхности поликристаллического алмазного покрытия деталей

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR610327A (fr) * 1926-02-02 1926-09-03 Machine à poncer
US3453783A (en) * 1966-06-30 1969-07-08 Texas Instruments Inc Apparatus for holding silicon slices
US3794314A (en) * 1972-01-13 1974-02-26 Coburn Optical Ind Vacuum chuck for ophthalmic lens finishing machinery
US3777442A (en) * 1972-04-03 1973-12-11 Timesavers Inc Wide belt sanding machine with improved support for outboard end of cantilevered center bar
US3924361A (en) * 1973-05-29 1975-12-09 Rca Corp Method of shaping semiconductor workpieces
US3971163A (en) * 1974-12-23 1976-07-27 Dow Corning Corporation Abrasive tape apparatus for contouring a flexible lens
DE2637343C2 (de) * 1976-08-19 1986-10-09 Heinrich Zeidler Maschinenfabrik Gmbh & Co Kg, 8672 Selb Maschine zum Beschleifen der Füße von Tellern oder sonstigem Flachgeschirr
SU688319A1 (ru) * 1978-05-03 1979-09-30 Досчатинский Филиал Центрального Конструкторского Проектно-Технологического Бюро "Медоборудование" Шлифовальное устройство
DE2903962C3 (de) * 1979-02-02 1981-08-27 Goetze Ag, 5093 Burscheid Maschine zum Schleifen ebener Flächen ferromagnetischer Werkstücke
JPS591151A (ja) * 1982-06-28 1984-01-06 Hitachi Ltd テ−プ加工装置
US4579313A (en) * 1985-02-21 1986-04-01 Leco Corporation Sample mounting system
US4612733A (en) * 1985-04-08 1986-09-23 The United States Of America As Represented By The Secretary Of The Air Force Very high speed lap with positive lift effect
US4640687A (en) * 1985-07-02 1987-02-03 Maccarthy Sr Donald W Idler pulley adjuster
DE3609441A1 (de) * 1986-03-20 1987-09-24 Bosch Gmbh Robert Exzenterschleifer mit einer vorrichtung zum veraendern der schleifbewegung
JPH0646452B2 (ja) * 1987-09-21 1994-06-15 富士写真フイルム株式会社 磁気テープクリーニング装置
DE8717353U1 (ja) * 1987-12-07 1989-01-05 Heinrich Zeidler Maschinenfabrik Gmbh & Co Kg, 8672 Selb, De
JPH0624682B2 (ja) * 1987-12-26 1994-04-06 株式会社日進製作所 ラッピングフィルムを用いた超仕上げ装置
JPH01316160A (ja) * 1988-06-13 1989-12-21 Hitachi Electron Eng Co Ltd ディスクの研摩加工方式
US5148639A (en) * 1988-07-29 1992-09-22 Canon Kabushiki Kaisha Surface roughening method for organic electrophotographic photosensitive member
JP2694197B2 (ja) * 1989-10-11 1997-12-24 株式会社ノリタケカンパニーリミテド 研摩テープを使用した平面研摩装置における研摩テープの張力制御装置
US5133156A (en) * 1990-04-19 1992-07-28 Penn Keystone Corporation Adjustable belt sander for wood
US5193316A (en) * 1991-10-29 1993-03-16 Texas Instruments Incorporated Semiconductor wafer polishing using a hydrostatic medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592439B1 (en) 2000-11-10 2003-07-15 Applied Materials, Inc. Platen for retaining polishing material
US6503131B1 (en) 2001-08-16 2003-01-07 Applied Materials, Inc. Integrated platen assembly for a chemical mechanical planarization system
US7648622B2 (en) 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing

Also Published As

Publication number Publication date
JPH05177523A (ja) 1993-07-20
EP0517594A1 (fr) 1992-12-09
DE69206685T2 (de) 1996-07-04
US5335453A (en) 1994-08-09
DE69206685D1 (de) 1996-01-25

Similar Documents

Publication Publication Date Title
EP0517594B1 (fr) Machine de polissage à bande microabrasive tendue et à tête support de plaquette perfectionnée
EP0517596B1 (fr) Machine de polissage à table porte-échantillon perfectionnée
EP0911431B1 (fr) Amélioration de la résistance mécanique d'une tranche de silicium monocristallin
FR2569139A1 (fr) Procede et dispositif pour le rodage ou le polissage de surfaces optiques
FR2880570A1 (fr) Tampon de polissage chimique-physique ayant une configuration de segment de rainure alternee radialement
EP0980303B1 (fr) Dispositif de sciage par fil pour la decoupe de tranches fines utilisant le croisement angulaire d'au moins deux nappes de fils
FR2783055A1 (fr) Support pour lentille optique, et son procede de mise en oeuvre
EP0402230A1 (fr) Procédé et dispositif de marquage et de clivage de plaquettes de matériaux semiconducteurs monocristallins
EP1464461B1 (fr) Procédé et dispositif de sciage par fil
EP1593460A1 (fr) Procédé et élément de polissage de surface
EP3623437B1 (fr) Procédé de collage temporaire avec adhesif thermoplastique incorporant une couronne rigide
EP0517595B1 (fr) Machine de polissage à contrôle de pression
EP1984147B1 (fr) Procede de satinage d'un materiau dur
EP0788859B1 (fr) Dispositif de sciage par fil
EP0082748B1 (fr) Machine de rectification plane frontale notamment pour rectifier les extrémités de fibres optiques
FR2465563A1 (fr) Procede et appareil de montage de plaquettes a polir
FR2677288A1 (fr) Machine de polissage a feuille microbrasive tendue.
FR2677293A1 (fr) Machine de polissage a tete support de plaquettes perfectionnee.
CH694182A5 (fr) Dispositif de sciage par fil.
EP1352711A1 (fr) Machine de polissage mécanico-chimique d'une plaquette de matériau et dispositif de distribution d'abrasif équipant une telle machine
FR2629008A1 (fr) Procede et dispositif de clivage d'une plaquette de silicium
JPH01188265A (ja) ラツプ加工装置
FR2638016A1 (fr) Procede de traitement de surface de couches magnetiques
EP0526262B1 (fr) Procédé de polissage de composants microélectroniques
FR2982415A1 (fr) Procede d'obtention d'un substrat pour la fabrication de semi-conducteur et substrat correspondant

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): BE DE FR GB IT NL

17P Request for examination filed

Effective date: 19930514

17Q First examination report despatched

Effective date: 19940927

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): BE DE FR GB IT NL

REF Corresponds to:

Ref document number: 69206685

Country of ref document: DE

Date of ref document: 19960125

ITF It: translation for a ep patent filed

Owner name: JACOBACCI & PERANI S.P.A.

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 19960226

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: BE

Payment date: 20000615

Year of fee payment: 9

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20000629

Year of fee payment: 9

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20010630

BERE Be: lapsed

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE

Effective date: 20010630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20020101

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

NLV4 Nl: lapsed or anulled due to non-payment of the annual fee

Effective date: 20020101

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20030604

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20030625

Year of fee payment: 12

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20030627

Year of fee payment: 12

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20040604

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050101

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20040604

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20050228

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050604