EP0485401A1 - Detecteur de rayonnement a thermopiles - Google Patents

Detecteur de rayonnement a thermopiles

Info

Publication number
EP0485401A1
EP0485401A1 EP19900910570 EP90910570A EP0485401A1 EP 0485401 A1 EP0485401 A1 EP 0485401A1 EP 19900910570 EP19900910570 EP 19900910570 EP 90910570 A EP90910570 A EP 90910570A EP 0485401 A1 EP0485401 A1 EP 0485401A1
Authority
EP
European Patent Office
Prior art keywords
radiation detector
thermopile
detector according
silicon
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19900910570
Other languages
German (de)
English (en)
Inventor
Hartmut Schmidt
Frank Beerwerth
Simon Middelhoek
Alexander Willem Van Herwarrden
Pasqualina Maria Sarro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Braun GmbH
Original Assignee
Braun GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Braun GmbH filed Critical Braun GmbH
Publication of EP0485401A1 publication Critical patent/EP0485401A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples

Definitions

  • thermopile radiation detector according to the preamble of patent claim 1.
  • Thermopile radiation detectors consist of several thermocouples connected in series and are often used to measure the intensity of infrared radiation. For each thermocouple, heat is supplied to one of two so-called “thermal contacts", namely the so-called “hot” thermal contact, by exposing one radiation-receiving surface to infrared radiation, while the other, so-called “cold” thermal contact Radiation is protected.
  • the size of the thermoelectric signal generated by the thermopile radiation detector increases with the intensity of the infrared radiation impinging on the radiation-receiving surface.
  • the absorber, thermal resistance and heat sink of a thermopile radiation detector must be adapted to the type of infrared radiation to be detected.
  • the hot thermal contacts themselves serve as absorbers, the connecting lines between hot and cold thermal contacts as heat resistance, while the heat sink consists of a metal ring that is in good thermal contact with the cold thermal contacts.
  • the absorber should be so well thermally insulated that almost nothing is given off to the environment by the heat flow, so that it almost completely flows to the heat sink via the thermal resistance.
  • thermopile radiation detector is known, for example, from the product description S07 from Isabellendazzling, Postfach 1453, D-6430 Dillenburg.
  • the thermal column radiation detector consists of 16 Cu-CuN thermocouples connected in series, which are sealed between two Kapton foils (thickness 25-50 ⁇ m).
  • the hot thermal contacts of the thermocouples are evenly distributed on a circular surface (6 mm diameter), while the cold thermal contacts are arranged on a circle with a 10 mm diameter.
  • thermopile radiation detector then delivers a thermoelectric signal when there is a temperature difference between the internal (hot) and the external (cold) thermo contacts.
  • the temperature difference is generated by the infrared radiation impinging on the hot thermal contacts, which is converted into heat in the Kapton films acting as absorbers and is dissipated into a heat sink (heat sink) via a thermal resistor.
  • thermopile radiation detector known from the product description mentioned is relatively complex and therefore expensive.
  • thermopile radiation detector manufactured using thin-film technology is known, which is applied to a so-called “substrate” consisting of silicon, in the following the one with the thermopile radiation detector provided substrate is referred to as a "chip".
  • substrate consisting of silicon
  • thermopile radiation detector provided substrate is referred to as a "chip”.
  • methods known from the manufacture of integrated circuits and from micromechanics, such as anisotropic etching, are used.
  • thermopile radiation detector known from the magazine "Measurement” is attached to a membrane made of silicon nitrite (Si-J.) and quartz (Si0 2 ), which is produced by anisotropic etching becomes. Bismuth / antimony thermal contacts are used to generate the thermoelectric signal.
  • This thermopile radiation detector has the advantage that the thermoelectric signal is relatively high due to the low thermal conductivity of the membrane.
  • this thermopile radiation detector has the disadvantage that it is difficult to manufacture and the chip can easily be damaged during its handling during the manufacturing process.
  • thermopile radiation detector see, for example, pages 68 and 86
  • the radiation-receiving surface is no longer mechanically and therefore thermally connected to the substrate on all sides Membrane, but at the end of one or more cantileve beam infrared detector which extends in the interior of the substrate, which otherwise only consists of four borders.
  • Such a cantilever is designed to be considerably thinner than the four enclosures delimiting the inner region of the chip.
  • the reason for the relatively small thermoelectric signal is the radiation receiving area, which is too small in relation to the thermal resistance of the cantilever.
  • Thermopiles can also be used to measure the pressure for pressures below about 10 kPa in gas-filled containers.
  • thermopiles The decisive difference to the radiation-detecting thermopiles is that the thermal resistance of a surface-like structure to the surrounding gas is used as a measure of the changing pressure of the gas.
  • the flat structure is heated in such a way that a heat flow which is constant over time via the variable thermal resistance of the surrounding gas produces a temperature difference between the flat structure and the surroundings. This usually very small temperature difference is converted into an electrical signal using a thermopile.
  • thermopile for measuring pressure in a vacuum
  • the surface in thermal contact with the gas is not applied to a membrane that is mechanically and thus thermally connected to the substrate on all sides, but to an inside of the membrane Chips floating membrane suspended on four webs ("floating membrane").
  • thermopile radiation detector If one were to use such an arrangement as a radiation detector, this would be unsuitable for this, since due to the large number (four) and the relatively short length of the webs, the thermal resistance between the radiation-receiving surface and the heat sink is very small. However, a small thermal resistance basically reduces the sensitivity of the radiation detector. However, since it is fundamentally desirable to keep the entire surface of a thermopile radiation detector and thus also its radiation-receiving area small, a sufficiently large thermoelectric signal is no longer available with relatively small thermal resistances. It is therefore an object of the invention to provide an even more economical thermopile radiation detector in which " on the one hand the chip area is further reduced and on the other hand emits an even larger thermoelectric signal without impairing its functionality.
  • thermopile radiation detector according to the preamble of claim 1 by the features contained in the characterizing part thereof.
  • thermopile radiation detector with a minimal chip area but good thermal efficiency. ie a relatively large thermoelectric signal for a given infrared radiation.
  • the meandering or spiral course of the tape has the advantage that the area required for the entire chip is less. Furthermore, the radiation-receiving surface can be arranged in the center of the chip in the case of a spiral formation of the band, which allows a simple rotationally symmetrical structure.
  • thermopile radiation detector If a band is selected which has a small width in comparison to the longitudinal dimensions of the radiation-receiving surface (claim 2), its thermal conductivity is further reduced, which further increases the efficiency of the thermopile radiation detector.
  • thermoelectric materials are used for both the cold and the hot TM thermal contacts (claim 6), since such an arrangement uses standard methods known from the manufacture of integrated circuits (CMOS or bipolar) can be produced.
  • thermoelectric materials are used as thermoelectric materials in both thermo contacts (claim 9).
  • processes can be used which are known from the manufacture of integrated circuits, the particular advantage lies in the temperature independence of the thermoelectric coefficient with a suitably chosen doping of the silicon.
  • the conductor tracks used for connecting the thermocouples in series can be made of the same material as the corresponding contact surfaces of the thermal contacts themselves (claim 10). This leads to cost savings, since the number of masks is reduced and a manufacturing step is also omitted in the further manufacturing process.
  • a suspension of the radiation-sensitive surface on a single band is not easy to carry out.
  • the layer structure on the chip must be matched to the materials and the layer thicknesses, since otherwise the tape can warp or warp due to internal tensions.
  • a thermopile radiation detector with deformed bands is unusable. If one chooses materials for an arrangement according to claim 5 for the tape, the insulating layer, the thermal contacts and the conductor tracks according to claims 8-11 and if one bases their dimensioning on dimensions according to claim 12, the two can be described below Compensate the effects described so far that warping or warping no longer occur. It is known from thin-film technology that layers which are produced by vapor deposition of a substrate build up considerable stresses during the condensation. The reason for this is that the materials for vapor deposition are considerably hotter than the substrate; when cooling, tensile stresses will occur, for example, on aluminum on silicon.
  • the SiO 2 In order to achieve a flat design of the thermopile radiation detector without warping, the SiO 2 must therefore be as thin as possible. Furthermore, the thickness and width of the aluminum conductor tracks should be as small as possible in order to minimize the stresses.
  • the radiation-receiving surface is circular and is covered in the region of the openings with a layer that is well absorbing infrared radiation in order to increase the thermal voltage.
  • thermopile radiation detector with a wavelength-dependent Em - to make sensitive. With such a thermopile radiation detector, it is then possible to use additional filters to selectively select the wavelength of interest. in the area of the incident radiation, which makes the manufacture significantly cheaper.
  • an electronic component is attached to measure the temperature of the edge of the chip on one of its borders, in which at least one material property changes to a known extent with its temperature.
  • the component supplies an input signal for a compensation circuit in order to compensate for the temperature dependence of the thermal voltage that exists in certain pairs of thermoelectric contacts.
  • thermoelectric signal if necessary linearises it and / or compensates for it (Claim 16), in order to combine very weak infrared radiation emitted by a distant object convert the electrical signal proportional to the temperature of the object with a voltage level of the size of a few volts.
  • thermopile radiation detector according to the invention with a spiral band
  • FIG. 2 shows a partially represented section through the radiation-receiving surface along the direction denoted by AA in FIG. 1 and, in a perspective representation, the partial course of the strip including the conductor tracks attached to it, 3a and 3b the schematic course of the two conductor tracks arranged on the tape.
  • the chip 1 shows a square-shaped chip 1 made of monocrystalline, p-doped silicon with a total thickness in the range of 300-750 / um, which has a layer of n-doped silicon on its entire surface Ver ⁇ thickness of 5-10 / um see and the edge is designated 2.
  • the chip 1 can be produced using methods known from the manufacture of integrated circuits and serves as the starting product (substrate) for the manufacture of the thermopile radiation detector according to the invention.
  • the width and the length of the chip 1 are each approximately
  • the chip 1 originally formed as a square cuboid is further processed in such a way that it only has four borders 2 ', 2 ", 2 at its edge 2 '", 2" "with an unchanged thickness of 300-750 // m, which delimit a rectangle.
  • the border 2 'of the chip 1 which runs to the right in FIG. 1 is shown broken away, although all four borders 2', 2 ", 2 '", 2 "" of the square chip 1 are continuously formed.
  • a strip 3 which is articulated at right angles and then bent three times clockwise in the clockwise direction remains on the bezel 2 'and consists entirely of monocrystalline, n-doped silicon.
  • a disk-shaped body is formed on the free end of the band 3, on which the radiation-receiving surface 4 is produced by further method steps becomes.
  • the thickness of the band 3 and the disc-shaped body is of the order of 5 / ⁇ m, so that originally about 300-780 / 411. a considerable proportion of the thick substrate is removed, for example etched away.
  • the approximately 130 ⁇ m wide band 3 is guided along the borders 2 ', 2 ", 2"', 2 "” in such a way that a gap 5 is present between the relevant border and the band 3.
  • the band 3 can be slotted, perforated or provided with other cutouts.
  • the material removal carried out in this way has the purpose of further reducing the thermal conductivity of the strip 3, without the mechanical stability being decisively impaired.
  • the band can be meandering.
  • the same advantages essential to the invention come into play again, namely that a thermopile radiation detector with a high sensitivity is produced with a large length of the belt and at the same time a minimal space requirement.
  • the radiation-receiving surface lies outside the center of the chip, which can be advantageous if one deliberately wants to attach it outside the axis of symmetry of the chip. This is e.g. This is the case, for example, if only the radiation incident on the thermopile radiation detector outside its axis of symmetry is to be measured.
  • thermopile radiation detector which correspond to one another are designated by the same reference numerals as in FIG. 1.
  • Fig. 2 shows the basic structure of the hot thermal contacts of the thermopile radiation detector.
  • Over the entire course of the band 3 are in total n-doped silicon material six trough-shaped deposits 6 with p-doped silicon arranged parallel to each other.
  • the inclusions 6 extend from the disc-shaped body over the end 14 of the band 3 facing it, along the entire band 3 over the end 13 of the band 3 facing the edge 2 to the socket 2 'of the chip 1.
  • the embedded, p- doped silicon forms conductor tracks 10b (cf. FIG. 3b), of which a total of six are arranged on the band 3 and of which only the ends 7 thereof can be seen in FIG. 2.
  • the p-doped silicon in the deposits 6 is produced using known methods, for example diffusion or ion implantation methods.
  • FIG. 2 Furthermore, it can be seen from FIG. 2 that about 0.15> s. ⁇ each above the band 3 except for openings 8 present in the area of the interface AA. thick, electrically insulating layer 9 of silicon dioxide (SiO ⁇ ) is attached, the width of which corresponds approximately to the width of the band 3.
  • the openings 8 have the purpose that there the ends 15 of further, made of aluminum and running on the insulating layer 9 conductor tracks 10a (see also Fig. 3a) with the corresponding ends 7 of the conductor tracks 10b made of p-doped silicon in electrical Get in touch.
  • the resulting electrical connection between the conductor tracks 10a and 10b forms the hot thermal contact of the thermocouples, of which only three out of a total of six are shown in FIG. 2.
  • the thickness or maximum thickness of the strip conductors 10a and 10b is about 0, ⁇ ⁇ m, its width or maximum width of about 12 / wm.
  • thermopile radiation detector has six thermocouples connected in series and consisting of a combination of p-doped silicon and aluminum.
  • the thermal contacts can be made from other elements, e.g. n-doped polysilicon or gold.
  • parts of the chip 1 e.g. the tape 3
  • the entire radiation-receiving surface 4 is covered with a layer (not shown), which is made of carbon black or, in another embodiment, for wavelength-selective absorption from a dielectric layer or from dielectric material exists, which has antireflective properties in the infrared radiation range.
  • a layer (not shown), which is made of carbon black or, in another embodiment, for wavelength-selective absorption from a dielectric layer or from dielectric material exists, which has antireflective properties in the infrared radiation range.
  • a is not shown in the figures Housing surrounding chip 1, which is filled with a protective gas, for example xenon, and is sealed gas-tight to the outside.
  • the enclosure V can also be provided with an electronic circuit which amplifies the sensor signal, if necessary temperature-compensated and / or linearized.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

Un détecteur de rayonnement à thermopiles comprend des thermoéléments formés sur une puce de silicium. Celle-ci est réalisée par des procédés micromécaniques utilisés dans la fabrication des circuits intégrés. Une puce de silicium (1) en forme de plaquette, initialement relativement épaisse subit un enlèvement de matière, ce qui laisse une bordure relativement épaisse (2) et une bandelette (3) sinueuse ou spiralée relativement mince qui est articulée uniquement par son extrémité (13) à la bordure (2). Les thermocontacts dits ''froids'' sont situés sur la bordure (2) de la puce (1) dans la région de l'extrémité (13) de la bandelette (3) et les thermocontacts dits ''chauds'' sont situés sur l'autre extrémité libre (14) de la bandelette mince (3). Cette configuration permet de produire un signal thermoélectrique relativement important pour un rayonnement infrarouge donné, même pour une surface de puce relativement faible.
EP19900910570 1989-08-01 1990-07-27 Detecteur de rayonnement a thermopiles Withdrawn EP0485401A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3925391 1989-08-01
DE19893925391 DE3925391A1 (de) 1989-08-01 1989-08-01 Thermosaeule

Publications (1)

Publication Number Publication Date
EP0485401A1 true EP0485401A1 (fr) 1992-05-20

Family

ID=6386259

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19900910570 Withdrawn EP0485401A1 (fr) 1989-08-01 1990-07-27 Detecteur de rayonnement a thermopiles

Country Status (3)

Country Link
EP (1) EP0485401A1 (fr)
DE (3) DE3925391A1 (fr)
WO (1) WO1991002229A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4425972A1 (de) * 1994-07-22 1996-03-14 Kundo Systemtechnik Gmbh Stromversorgungseinrichtung, insbesondere für elektrisch betriebene Meßinstrumente
FR2760530B1 (fr) * 1997-03-07 1999-04-16 Setaram Societe D Etudes D Aut Dispositif de mesure des proprietes thermiques et/ou reactionnelles d'un ou plusieurs echantillons de matiere
DE10033589A1 (de) * 2000-07-11 2002-01-31 Bosch Gmbh Robert Mikrostrukturierter Thermosensor
DE10144343A1 (de) * 2001-09-10 2003-03-27 Perkinelmer Optoelectronics Sensor zum berührugslosen Messen einer Temperatur
DE102004028032B4 (de) 2004-06-09 2008-04-17 Perkinelmer Optoelectronics Gmbh & Co.Kg Sensorelement
DE102010042108B4 (de) * 2010-01-18 2013-10-17 Heimann Sensor Gmbh Thermopile-Infrarot-Sensor in monolithischer Si-Mikromechanik
JP2019518960A (ja) 2016-06-21 2019-07-04 ハイマン・ゼンゾル・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 温度測定又はガス検出のためのサーモパイル赤外線単一センサ
CN112964396B (zh) * 2021-02-08 2022-08-02 中国科学院力学研究所 一种基于辐射测温的量热计

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2064584A5 (fr) * 1969-09-30 1971-07-23 Labo Electronique Physique
US4558342A (en) * 1983-05-31 1985-12-10 Rockwell International Corporation Thermoelectric infrared detector array

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9102229A1 *

Also Published As

Publication number Publication date
WO1991002229A1 (fr) 1991-02-21
DE4091364D2 (en) 1992-01-30
DE3925391A1 (de) 1991-02-07
DE4091364C1 (fr) 1993-07-15

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