EP0471138A2 - Process for producing an electrical measuring resistor - Google Patents

Process for producing an electrical measuring resistor Download PDF

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Publication number
EP0471138A2
EP0471138A2 EP91102300A EP91102300A EP0471138A2 EP 0471138 A2 EP0471138 A2 EP 0471138A2 EP 91102300 A EP91102300 A EP 91102300A EP 91102300 A EP91102300 A EP 91102300A EP 0471138 A2 EP0471138 A2 EP 0471138A2
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Prior art keywords
layer
platinum
rhodium
range
resistance
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EP91102300A
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German (de)
French (fr)
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EP0471138B1 (en
EP0471138A3 (en
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Karlheinz Dr. Wienand
Werner Englert
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Heraeus Sensor GmbH
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Heraeus Sensor GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/232—Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance

Definitions

  • the invention relates to a method for producing an electrical measuring resistor with a predetermined temperature coefficient for a resistance thermometer which has a platinum-containing thin film as the resistance layer on a carrier, the surface of the carrier carrying the resistance layer being made of electrically insulating material.
  • US Pat. No. 4,375,056 discloses a thin-film resistance thermometer with a predetermined temperature coefficient of resistance, in which a thin electrically conductive metal film is applied to an electrically insulating substrate, the thickness of the metal film being in the range from 0.05 and 0.8 ⁇ m lies; in the area of this low layer thickness it is possible to achieve a lower temperature coefficient than with solid material.
  • the ratio of the relative change in the temperature coefficient to the relative change in the layer thickness is greater than 0.01.
  • a platinum film is preferably used as the thin-layer material.
  • a method for producing such a measuring resistor is described in US Pat. No. 4,469,717.
  • a method for producing an electrical measuring resistor for a resistance thermometer which on a carrier made of ceramic material a platinum thin film produced by atomization in a thickness of 0.1 to 10 ⁇ m having a predetermined temperature coefficient; the average coefficient of thermal expansion of the ceramic substrate differs from that of the thermometer board by less than +/- 30%.
  • Aluminum oxide, beryllium oxide, thorium oxide, magnesium oxide or magnesium silicate are used as the substrate, the substrate after heat treatment containing less than 20 ppm of metals which are in a form which is reactive with platinum.
  • the object of the invention is to provide a method by which a platinum thin-film resistance layer of a given layer thickness is treated by doping with foreign atoms in such a way that a desired electrical temperature coefficient can be set in the range from 1600 ppm / k to 3860 ppm / k.
  • aluminum oxide is used as the carrier;
  • a support made of a steel substrate which has an electrically insulating intermediate layer on the surface provided for the application of the platinum thin film, said intermediate layer consisting of Si0 2 , BaO, A1 2 0 3 and an inorganic, cobalt-containing Dye compound exists, as described for example in DE-PS 34 26 804.
  • the platinum thin film is applied to the carrier by means of electron beam evaporation.
  • the preparation to be applied by the screen printing process preferably has a rhodium content in the range from 0.1 to 12% by weight, based on the content of platinum and rhodium in the preparation.
  • the measuring resistor produced by the method has a thickness in the range from 0.85 to 1.3 ⁇ m.
  • a platinum thin film 2 is applied over the entire surface of the substrate 1 consisting of aluminum oxide in the electron beam process or cathode sputtering process.
  • a preparation is applied according to FIG. 1 from a solution of platinum resinate and synthetic resin in organic solvents (12.5% Pt) and from a solution of rhodium sulphate resinate in organic solvents (5% Rh) using the screen printing process; the solutions mentioned are available, for example, under the designations RP 10001 / 145B and MR 4511-L from W. C. Heraeus GmbH, Hanau.
  • the rhodium content of layer 3 is in the range from 0.1% to 12%, based on the content of platinum and rhodium.
  • the substrate 1, together with its two layers 2, 3, is subjected to a heat treatment under atmospheric conditions in an oven at a temperature in the range from 1000 to 1400 ° C. until the rhodium in the resistance layer 2 ′ which forms is evenly distributed, with at least a partial exchange of the platinum atoms from layer 3 with platinum atoms of layer 2 also taking place.
  • the resistance layer 2 ' is structured in the form of a meander, for example by sputter etching.
  • the resistance layer 2 ' is in a meandering shape on the substrate 1, contact fields 4, 5 for external connections being provided at the ends of the resistance strip.
  • the contact fields 4 and 5 are applied using the same method as the resistance layer 2 '.
  • FIG. 3 shows the dependency of the temperature coefficient of the resistance TCR on the rhodium content in the platinum alloy, the rhodium content being stated in% by weight of the platinum alloy. It is therefore possible, according to FIG. 3, to precisely adjust the temperature coefficient in the range from 1600 to 3850 ppm / K for measuring resistors based on platinum alloys by varying the rhodium content of the resistance layer; only the rhodium content of the platinum alloy is varied without changing the layer thickness, so that, for example with a constant layer thickness of 1.1 ⁇ m, a temperature coefficient of 3850 ppm / K (point A) is achieved with a rhodium content of 0.01%; If the proportion of rhodium increases to 0.04% with the same layer thickness, a temperature coefficient of 3830 ppm / K (point B) is achieved.
  • a further increase in the rhodium content to 0.16% reduces the temperature coefficient to 3750 ppm / K (point C). With a further increase in the proportion of rhodium to, for example, 10%, a temperature coefficient of 1600 ppm / K (point D) can be achieved.

Abstract

To produce an electrical measuring resistor having a predetermined temperature coefficient for a resistance thermometer, a substrate made of aluminium oxide ceramic is provided with a thin platinum film, to which a layer composed of a preparation which contains platinum resinate and rhodium sulphoresinate and whose rhodium content governs the desired temperature coefficient is then applied by screen printing. After drying and baking said screen-printed layer, the substrate coated in this way is subjected to heat treatment at a temperature in the range from 1000 to 1400 DEG C until the rhodium is uniformly dispersed in the previous platinum resistance layer or the resistance layer being formed.

Description

Die Erfindung betrifft ein Verfahren zur Herstellung eines elektrischen Meßwiderstandes mit einem vorgegebenen Temperaturkoeffizienten für ein Widerstandsthermometer, der auf einem Träger einen Platin enthaltenden Dünnfilm als Widerstands- schicht aufweist, wobei die die Widerstandsschicht tragende Oberfläche des Trägers aus elektrisch isolierendem Werkstoff besteht.The invention relates to a method for producing an electrical measuring resistor with a predetermined temperature coefficient for a resistance thermometer which has a platinum-containing thin film as the resistance layer on a carrier, the surface of the carrier carrying the resistance layer being made of electrically insulating material.

Aus der US-PS 4,375,056 ist ein Dünnschicht-Widerstandsthermometer mit einem vorgegebenen Temperaturkoeffizienten des Widerstandes bekannt, bei dem ein dünner elektrisch leitender Metallfilm auf ein elektrisch isolierendes Substrat aufgebracht wird, wobei die Dicke des Metallfilms im Bereich von 0,05 und 0,8 um liegt; im Bereich dieser geringen Schichtstärke ist es möglich einen geringeren Temperaturkoeffizienten zu erzielen als beim Vollmaterial. Das Verhältnis der relativen Änderung des Temperaturkoeffizienten zur relativen Änderung der Schichtstärke ist größer als 0,01. Als Dünnschichtmaterial wird vorzugsweise ein Platinfilm eingesetzt. Ein Verfahren zur Herstellung eines solchen Meßwiderstandes ist in der US-PS 4,469,717 beschrieben.US Pat. No. 4,375,056 discloses a thin-film resistance thermometer with a predetermined temperature coefficient of resistance, in which a thin electrically conductive metal film is applied to an electrically insulating substrate, the thickness of the metal film being in the range from 0.05 and 0.8 µm lies; in the area of this low layer thickness it is possible to achieve a lower temperature coefficient than with solid material. The ratio of the relative change in the temperature coefficient to the relative change in the layer thickness is greater than 0.01. A platinum film is preferably used as the thin-layer material. A method for producing such a measuring resistor is described in US Pat. No. 4,469,717.

Aus der DE-PS 25 27 739 bzw. der entsprechenden US-PS 4,050,052 ist ein Verfahren zur Herstellung eines elektrischer Meßwiderstandes für ein Widerstandsthermometer bekannt, der auf einem Träger aus keramischem Material einen durch Zerstäubung hergestellten Platin Dünnfilm in einer Dicke von 0,1 bis 10 um trägt, der einen vorbestimmten Temperaturkoeffizienten aufweist; der mittlere thermische Ausdehnungskoeffizient des Keramiksubstrats unterscheidet sich um weniger als +/- 30 % von demjenigen des Thermometerplatins. Als Substrat wer- den Aluminiumoxid, Berylliumoxid, Thoriumoxid, Magnesiumoxid oder ein Magne- siumsilikat eingesetzt, wobei das Substrat nach einer Wärmebehandlung weniger als 20 ppm an Metallen enthält, die in mit Platin reaktionsfähiger Form vor- liegen.From DE-PS 25 27 739 and the corresponding US-PS 4,050,052 a method for producing an electrical measuring resistor for a resistance thermometer is known which on a carrier made of ceramic material a platinum thin film produced by atomization in a thickness of 0.1 to 10 µm having a predetermined temperature coefficient; the average coefficient of thermal expansion of the ceramic substrate differs from that of the thermometer board by less than +/- 30%. Aluminum oxide, beryllium oxide, thorium oxide, magnesium oxide or magnesium silicate are used as the substrate, the substrate after heat treatment containing less than 20 ppm of metals which are in a form which is reactive with platinum.

Aus Figur 3 des Aufsatzes "Rhodium-Platinum Alloys" von A. S. Darling in der Zeitschrift Platinum Metals Review, Seite 60, Vol. 5, 1961 ist die Funktion des Temperaturkoeffizienten einer Platinlegierung in Abhängigkeit vom Rhodiumanteil dargestellt.From Figure 3 of the article "Rhodium-Platinum Alloys" by A. S. Darling in the magazine Platinum Metals Review, page 60, Vol. 5, 1961, the function of the temperature coefficient of a platinum alloy as a function of the rhodium content is shown.

Als problematisch erweist es sich nach dem Stand der Technik, eine einfache und rasche Einstellung des gewünschten elektrischen Temperaturkoeffizienten des Widerstandes je nach Anwendungsfall - beispielsweise im Bereich von 1600 bis 3860 ppm/K-vorzunehmen, da beim Aufdampfen der Widerstandsschicht aufgrund verschiedener Dampfdrücke der aufzubringenden Materialien die gewünschte Legierung nicht mit ausreichender Sicherheit einstellbar ist, bzw. bei der Kathodenzerstäubung das Targetmaterial zuvor in der gewünschten Legierung entsprechend herzustellen ist; die Einstellung eines gewünschten TemperaturKoeffizienten des elektrischen Widerstandes über die Variation der Schichtstärke führt dagegen aufgrund der damit verbundenen Änderung des Leiterquerschnitts der Widerstandsbahn auch zu einer Änderung der Breite oder Länge der Widerstandsbahn zwecks Anpassung an den vorgegebenen Nennwiderstand des Meßwiderstandes, woraus sich eine Änderung der Struktur der Widerstandsbahn ergibt.According to the prior art, it has proven problematic to make a simple and rapid setting of the desired electrical temperature coefficient of the resistance depending on the application, for example in the range from 1600 to 3860 ppm / K, because when the resistance layer is evaporated due to different vapor pressures of the materials to be applied the desired alloy cannot be set with sufficient certainty, or, in the case of sputtering, the target material has to be prepared beforehand in the desired alloy; Setting a desired temperature coefficient of the electrical resistance by varying the layer thickness, on the other hand, also leads to a change in the width or length of the resistance track due to the associated change in the conductor cross section of the resistance track in order to adapt to the specified nominal resistance of the measuring resistor, which results in a change in the structure of the Resistance path results.

Aufgabe der Erfindung ist es ein Verfahren anzugeben, nach dem eine Platin-Dünnfilm-Widerstandsschicht vorgegebener Schichtstärke durch Dotierung mit Fremdatomen so behandelt wird, daß ein gewünschter elektrischer Temperaturkoeffizient im Bereich von 1600 ppm/k bis 3860 ppm/k einstellbar ist.The object of the invention is to provide a method by which a platinum thin-film resistance layer of a given layer thickness is treated by doping with foreign atoms in such a way that a desired electrical temperature coefficient can be set in the range from 1600 ppm / k to 3860 ppm / k.

Die Aufgabe wird durch die kennzeichnenden Merkmale des Anspruchs 1 gelöst. Vorteilhafte Ausgestaltungen der Erfindung sind in den Unteransprüchen angegeben.The object is achieved by the characterizing features of claim 1. Advantageous embodiments of the invention are specified in the subclaims.

In einer bevorzugten Ausführungsform des Verfahrens wird als Träger Aluminiumoxid verwendet ; es ist jedoch auch möglich, einen Träger aus einem Stahl-Substrat zu verwenden, das auf der zur Aufbringung des Platin-Dünnfilms vorgesehenen Oberfläche eine elektrisch isolierende Zwischenschicht aufweist, die aus Si02, BaO, A1203 und einer anorganischen, Kobalt enthaltenden Farbstoffverbindung besteht, wie sie beispielsweise in der DE-PS 34 26 804 beschrieben ist. Der Platin-Dünnfilm wird mittels Elektronenstrahlverdampfung auf den Träger aufgebracht. Das im Siebdruckverfahren aufzubringende Präparat weist vorzugsweise einen Rhodiumgehalt im Bereich von 0,1 bis 12 Gew.-%, bezogen auf den Gehalt von Platin und Rhodium im Präparat, auf. Der nach dem Verfahren hergestellte Meßwiderstand weist eine Dicke im Bereich von 0,85 bis 1,3 um auf.In a preferred embodiment of the method, aluminum oxide is used as the carrier; However, it is also possible to use a support made of a steel substrate, which has an electrically insulating intermediate layer on the surface provided for the application of the platinum thin film, said intermediate layer consisting of Si0 2 , BaO, A1 2 0 3 and an inorganic, cobalt-containing Dye compound exists, as described for example in DE-PS 34 26 804. The platinum thin film is applied to the carrier by means of electron beam evaporation. The preparation to be applied by the screen printing process preferably has a rhodium content in the range from 0.1 to 12% by weight, based on the content of platinum and rhodium in the preparation. The measuring resistor produced by the method has a thickness in the range from 0.85 to 1.3 µm.

Als vorteilhaft erweist es sich, daß in dem Verfahren bisher allgemein übliche Verfahrensschritte wie das Aufdampfen der Platinschicht und das Aufbringen des Präparats im Siebdruckverfahren angewendet werden und somit preiswert und exakt auszuführen sind. Ein weiterer Vorteil ist in der einfachen Variation des Temperaturkoeffizienten des elektrischen Widerstandes durch Änderung des Rhodiumanteils im Präparat zu sehen.It has proven to be advantageous that previously common process steps, such as vapor deposition of the platinum layer and the application of the preparation in the screen printing process, are used in the process and can therefore be carried out inexpensively and precisely. Another advantage can be seen in the simple variation of the temperature coefficient of the electrical resistance by changing the rhodium content in the preparation.

Im folgenden ist der Gegenstand der Erfindung anhand der Figuren 1 bis 3 näher erläutert.

  • Figur 1 a zeigt im Längsschnitt das Substrat mit der aufgebrachten Platinschicht,
  • Figur 1 b die Platinschicht gemäß Figur 1 a mit der im Siebdruckverfahren aufgebrachten Präparat-Schicht,
  • Figur 1 c die mit Rhodium legierte Meßwiderstandsschicht im Längsschnitt.
  • Figur 2 zeigt den Meßwiderstand in einer Draufsicht nach der Strukturierung des Widerstandsmäanders.
  • Figur 3 zeigt die Abhängigkeit des Temperaturkoeffizienten vom Rhodium-Anteil in der Meßwiderstandsschicht.
The subject matter of the invention is explained in more detail below with reference to FIGS. 1 to 3.
  • FIG. 1 a shows in longitudinal section the substrate with the applied platinum layer,
  • 1b shows the platinum layer according to FIG. 1a with the preparation layer applied by the screen printing process,
  • Figure 1 c shows the rhodium alloyed measuring resistance layer in longitudinal section.
  • Figure 2 shows the measuring resistor in a plan view after the structuring of the resistance meander.
  • Figure 3 shows the dependence of the temperature coefficient on the rhodium content in the measuring resistance layer.

Gemäß Figur 1 wird auf das aus Aluminiumoxid bestehende Substrat 1 im Elektronenstrahlverfahren oder Kathodenzerstäubungsverfahren ein Platin-Dünnfilm 2 ganzflächig aufgebracht. Nach Aufbringen des Platin-Dünnfilms 2 erfolgt gemäß Figur 1 die Aufbringung eines Präparates aus einer Lösung von Platinresinat und Kunstharz in organischen Lösungsmitteln (12,5 % Pt) und aus einer Lösung von Rhodiumsulforesinat in organischen Lösungsmitteln (5 % Rh) im Siebdruckverfahren; die genannten Lösungen sind beispielsweise unter den Bezeichnungen RP 10001/145B und MR 4511-L bei der W. C. Heraeus GmbH, Hanau, erhältlich. Nach Auftragung der Siebdruck-Schicht 3 wird diese bei einer Temperatur im Bereich von 80 bis 120°C getrocknet und anschließend bei einer Temperatur im Bereich von 800 bis 950 C eingebrannt, wobei die organischen Lösungsmittel verbrennen oder verdampfen und die Resinate zersetzt werden. Der Rhodiumgehalt der Schicht 3 liegt dabei im Bereich von 0,1 % bis 12 %, bezogen auf den Gehalt von Platin und Rhodium. Nach dem Einbrennen der Schicht 3 wird das Substrat 1 zusammen mit seinen beiden Schichten 2,3 einer Wärmebehandlung unter atmosphärischen Bedingungen in einem Ofen bei einer Temperatur im Bereich von 1000 bis 1400°C solange unterzogen, bis das Rhodium in der sich bildenden Widerstandsschicht 2' gleichmäßig verteilt ist, wobei auch zumindest ein teilweiser Austausch der Platin-Atome aus der Schicht 3 mit Platinatomen der Schicht 2 stattfindet.According to FIG. 1, a platinum thin film 2 is applied over the entire surface of the substrate 1 consisting of aluminum oxide in the electron beam process or cathode sputtering process. After the platinum thin film 2 has been applied, a preparation is applied according to FIG. 1 from a solution of platinum resinate and synthetic resin in organic solvents (12.5% Pt) and from a solution of rhodium sulphate resinate in organic solvents (5% Rh) using the screen printing process; the solutions mentioned are available, for example, under the designations RP 10001 / 145B and MR 4511-L from W. C. Heraeus GmbH, Hanau. After application of the screen printing layer 3, it is dried at a temperature in the range from 80 to 120 ° C. and then baked at a temperature in the range from 800 to 950 ° C., the organic solvents burning or evaporating and the resinates being decomposed. The rhodium content of layer 3 is in the range from 0.1% to 12%, based on the content of platinum and rhodium. After the baking of the layer 3, the substrate 1, together with its two layers 2, 3, is subjected to a heat treatment under atmospheric conditions in an oven at a temperature in the range from 1000 to 1400 ° C. until the rhodium in the resistance layer 2 ′ which forms is evenly distributed, with at least a partial exchange of the platinum atoms from layer 3 with platinum atoms of layer 2 also taking place.

In einem sich anschließenden Verfahrensschritt wird die Widerstandsschicht 2' beispielsweise durch Sputterätzen in Form eines Mäanders strukturiert.In a subsequent method step, the resistance layer 2 'is structured in the form of a meander, for example by sputter etching.

Gemäß Figur 2 befindet sich auf dem Substrat 1 die Widerstandsschicht 2' in Mäanderform, wobei an den Enden des Widerstands-Streifens Kontaktfelder 4,5 für äußere Anschlüsse vorgesehen sind. Die Kontaktfelder 4 und 5 sind dabei nach dem gleichen Verfahren aufgebracht wie die Widerstandsschicht 2'.According to FIG. 2, the resistance layer 2 'is in a meandering shape on the substrate 1, contact fields 4, 5 for external connections being provided at the ends of the resistance strip. The contact fields 4 and 5 are applied using the same method as the resistance layer 2 '.

Figur 3 zeigt die Abhängigkeit des Temperaturkoeffizienten des Widerstandes TCR vom Rhodium-Anteil in der Platinlegierung, wobei der Rhodium-Anteil in Gewichts-% der Platinlegierung angegeben ist. Es ist somit möglich, gemäß Figur 3 durch Variation des Rhodiumanteils der Widerstandsschicht den Temperaturkoeffizienten im Bereich von 1600 bis 3850 ppm/K für Meßwiderstände auf der Basis von Platinlegierungen exakt einzustellen; es wird also lediglich der Rhodiumanteil der Platinlegierung ohne Änderung der Schichtdicke variert, so daß beispielsweise bei einer konstanten Schichtdicke von 1,1 um mit einem Rhodiumanteil von 0,01 % ein Temperaturkoeffizient von 3850 ppm/K (Punkt A) erzielt wird; steigt der Rhodiumanteil bei gleicher Schichtdicke auf 0,04 %, so wird ein Temperaturkoeffizient von 3830 ppm/K (Punkt B) erzielt. Eine weitere Erhöhung des Rhodiumgehaltes auf 0,16 % verringert den Temperaturkoeffizienten auf 3750 ppm/K (Punkt C). Bei einer weiteren Zunahme des Rhodiumanteils auf beispielsweise 10 % läßt sich ein Temperaturkoeffizient von 1600 ppm/K (Punkt D) erzielen.FIG. 3 shows the dependency of the temperature coefficient of the resistance TCR on the rhodium content in the platinum alloy, the rhodium content being stated in% by weight of the platinum alloy. It is therefore possible, according to FIG. 3, to precisely adjust the temperature coefficient in the range from 1600 to 3850 ppm / K for measuring resistors based on platinum alloys by varying the rhodium content of the resistance layer; only the rhodium content of the platinum alloy is varied without changing the layer thickness, so that, for example with a constant layer thickness of 1.1 μm, a temperature coefficient of 3850 ppm / K (point A) is achieved with a rhodium content of 0.01%; If the proportion of rhodium increases to 0.04% with the same layer thickness, a temperature coefficient of 3830 ppm / K (point B) is achieved. A further increase in the rhodium content to 0.16% reduces the temperature coefficient to 3750 ppm / K (point C). With a further increase in the proportion of rhodium to, for example, 10%, a temperature coefficient of 1600 ppm / K (point D) can be achieved.

Claims (11)

1. Verfahren zur Herstellung eines elektrischen Meßwiderstandes mit einem vorgegebenen Temperaturkoeffizienten für ein Widerstandsthermometer, der auf einem Träger einen Platin enthaltenden Dünnfilm als Widerstands- schicht aufweist, wobei die die Widerstands- schicht tragende Oberfläche des Trägers aus elektrisch isolierendem Werkstoff besteht, dadurch gekennzeichnet, daß zur Bildung der Widerstandsschicht (2') zunächst auf das Substrat (1) ein Platin-Dünnfilm (2) aufgedampft oder aufgestäubt wird, auf den eine Schicht aus einem Platinresinat und Rhodiumsulforesinat enthaltenden Präparat mit einem solchen Rhodium-Gehalt im Siebdruckverfahren aufgebracht wird, daß nach dem Trocknen und Einbrennen dieser Siebdruck-Schicht (3) und anschließender Wärmebehandlung des so beschichteten Trägers bei einer Temperatur im Bereich von 1000 bis 1400°C das Rhodium in der Widerstandsschicht gleichmäßig verteilt ist und in einem Anteil im Bereich von 0,01 bis 10 % Gew.-% vorliegt.1. A method for producing an electrical measuring resistor with a predetermined temperature coefficient for a resistance thermometer which has a platinum-containing thin film on a carrier as a resistance layer, the surface of the carrier carrying the resistance layer being made of an electrically insulating material, characterized in that to form the resistance layer (2 '), a platinum thin film (2) is first evaporated or sputtered onto the substrate (1), onto which a layer of a preparation containing platinum resinate and rhodium sulphate resinate with such a rhodium content is applied in a screen printing process that after drying and baking this screen printing layer (3) and subsequent heat treatment of the support coated in this way at a temperature in the range from 1000 to 1400 ° C., the rhodium is evenly distributed in the resistance layer and in a proportion in the range from 0.01 to 10 % Wt% is present. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß als Substrat (1) eine Keramik verwendet wird.2. The method according to claim 1, characterized in that a ceramic is used as the substrate (1). 3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß als Keramik Aluminiumoxid, Magnesiumoxid, Berylliumoxid oder Glaskeramik verwendet wird.3. The method according to claim 2, characterized in that aluminum oxide, magnesium oxide, beryllium oxide or glass ceramic is used as the ceramic. 4. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß als Substrat (1) ein Metallsubstrat verwendet wird, das auf der dem Platin-Dünnfilm (2) zugewandten Oberfläche eine elektrisch isolierende Zwischenschicht aufweist.4. The method according to claim 1, characterized in that a metal substrate is used as the substrate (1) which has an electrically insulating intermediate layer on the surface facing the platinum thin film (2). 5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß das Substrat (1) aus Stahl und die elektrisch isolierende Zwischenschicht aus Glaskeramik mit 40-65 Gewichts-% Si02, 25-40 Gewichts-% BaO, 5-20 Gewichts-% A1203 und einer anorganischen, Kobalt enthaltenden Farbstoffverbindung besteht.5. The method according to claim 4, characterized records that the substrate (1) made of steel and the electrically insulating intermediate layer made of glass ceramic with 40-65% by weight Si0 2 , 25-40% by weight BaO, 5-20% by weight A1 2 0 3 and an inorganic, cobalt containing dye compound. 6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß als Stahl ferritischer Stahl eingesetzt wird.6. The method according to claim 5, characterized in that ferritic steel is used as steel. 7. Verfahren nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß ein Präparat verwendet wird, dessen Rhodium-Gehalt im Bereich von 0,1 bis 99,9 % Gew.-%, bezogen auf den Gehalt von Platin und Rhodium im Präparat, liegt.7. The method according to any one of claims 1 to 6, characterized in that a preparation is used, the rhodium content in the range of 0.1 to 99.9% by weight, based on the content of platinum and rhodium in the preparation , lies. 8. Verfahren nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, daß die Siebdruck-Schicht (3) bei einer Temperatur im Bereich von 80 bis 120°C getrocknet wird.8. The method according to any one of claims 1 to 7, characterized in that the screen printing layer (3) is dried at a temperature in the range of 80 to 120 ° C. 9. Verfahren nach einem der Ansprüche 1 bis 8, dadurch gekennzeichnet, daß die Siebdruck-Schicht (3) bei einer Temperatur im Bereich von 800 bis 950 C eingebrannt wird.9. The method according to any one of claims 1 to 8, characterized in that the screen printing layer (3) is baked at a temperature in the range of 800 to 950 C. 10. Verfahren nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, daß der Platin-Dünnfilm (2) in einer Dicke von 0,8 bis 1,2 um aufgebracht wird.10. The method according to any one of claims 1 to 9, characterized in that the platinum thin film (2) is applied in a thickness of 0.8 to 1.2 µm. 11. Verfahren nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, daß eine Widerstands-Schicht (2') mit einer Dicke im Bereich von 0,85 bis 1,3 um erzeugt wird.11. The method according to any one of claims 1 to 10, characterized in that a resistance layer (2 ') with a thickness in the range of 0.85 to 1.3 µm is produced.
EP91102300A 1990-08-17 1991-02-19 Process for producing an electrical measuring resistor Expired - Lifetime EP0471138B1 (en)

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DE4026061A DE4026061C1 (en) 1990-08-17 1990-08-17

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WO2000042404A1 (en) * 1999-01-18 2000-07-20 Slovak Technical University Method for stabilisation of electrical resistance of platinum wires
CN100359305C (en) * 2004-04-19 2008-01-02 重庆大学 Distributing plane winding type thermal flowmeter probe
CN100359306C (en) * 2004-04-19 2008-01-02 重庆大学 Distributing thin film circuit thermal flowmeter senser
WO2008138887A1 (en) * 2007-05-16 2008-11-20 Innovative Sensor Technology Ist Ag Resistance thermometer
US7927836B2 (en) 2005-06-17 2011-04-19 Merz Pharma Gmbh & Co. Kgaa Device and method for the production of biologically active compounds by fermentation
US8183974B2 (en) 2007-09-28 2012-05-22 Heracus Sensor Technology GmbH 1200° C. film resistor

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DE4300084C2 (en) * 1993-01-06 1995-07-27 Heraeus Sensor Gmbh Resistance thermometer with a measuring resistor
DE4330447C2 (en) * 1993-09-09 1996-09-19 Heraeus Sensor Gmbh Temperature sensor with a measuring resistor in a metal jacket
JP3175890B2 (en) * 1993-12-27 2001-06-11 日本碍子株式会社 Temperature sensor
DE19540194C1 (en) * 1995-10-30 1997-02-20 Heraeus Sensor Gmbh Resistance thermometer for accurately measuring temperatures between -200 and 500 deg. C
DE19542516C1 (en) * 1995-11-15 1997-04-17 Heraeus Sensor Gmbh Temperature sensor
AT405591B (en) 1997-10-03 1999-09-27 Schaffler & Co HEATING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
EP0973020B1 (en) 1998-07-16 2009-06-03 EPIQ Sensor-Nite N.V. Electrical temperature sensor with a multilayer
DE19945641A1 (en) * 1999-09-23 2001-04-05 Abb Research Ltd Resistance element for an electrical network and/or an electronic component has a resistance body made of a ceramic interspersed with metal

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Cited By (8)

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Publication number Priority date Publication date Assignee Title
WO2000042404A1 (en) * 1999-01-18 2000-07-20 Slovak Technical University Method for stabilisation of electrical resistance of platinum wires
CN100359305C (en) * 2004-04-19 2008-01-02 重庆大学 Distributing plane winding type thermal flowmeter probe
CN100359306C (en) * 2004-04-19 2008-01-02 重庆大学 Distributing thin film circuit thermal flowmeter senser
US7927836B2 (en) 2005-06-17 2011-04-19 Merz Pharma Gmbh & Co. Kgaa Device and method for the production of biologically active compounds by fermentation
WO2008138887A1 (en) * 2007-05-16 2008-11-20 Innovative Sensor Technology Ist Ag Resistance thermometer
US8106740B2 (en) 2007-05-16 2012-01-31 Innovative Sensor Technology Ist Ag Resistance thermometer
EP3327415A1 (en) * 2007-05-16 2018-05-30 Innovative Sensor Technology IST AG Resistance thermometer
US8183974B2 (en) 2007-09-28 2012-05-22 Heracus Sensor Technology GmbH 1200° C. film resistor

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EP0471138B1 (en) 1994-12-14
DE4026061C1 (en) 1992-02-13
EP0471138A3 (en) 1992-06-17
ATE115761T1 (en) 1994-12-15
DE59103868D1 (en) 1995-01-26

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