EP0446108B1 - Dielektrischer Resonator mit Mikrowellenmetallstreifen und mit diesem Resonator ausgerüstete Vorrichtung - Google Patents
Dielektrischer Resonator mit Mikrowellenmetallstreifen und mit diesem Resonator ausgerüstete Vorrichtung Download PDFInfo
- Publication number
- EP0446108B1 EP0446108B1 EP91400558A EP91400558A EP0446108B1 EP 0446108 B1 EP0446108 B1 EP 0446108B1 EP 91400558 A EP91400558 A EP 91400558A EP 91400558 A EP91400558 A EP 91400558A EP 0446108 B1 EP0446108 B1 EP 0446108B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- pattern
- resonator
- resonator according
- microwave
- variable capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/082—Microstripline resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/088—Tunable resonators
Definitions
- the invention relates to a dielectric resonator of the type described in the preamble of claim 1.
- Such a resonator is known from US Pat. No. 4,262,269.
- This document relates to an active microwave filter comprising a square C-shaped resonator deposited on a dielectric substrate and an inverting amplifier such as an amplifier of the type FET interposed between the ends of the half-wavelength resonator. Therefore, the gap between the ends is relatively large.
- This known device has the major drawbacks that its quality coefficient and the coupling are relatively low, that they cause unwanted couplings with adjacent components and that its dimensions are relatively large.
- the object of the present invention is to propose a dielectric resonator which does not have the drawbacks of the known resonator.
- the resonator according to the invention comprises the characteristics which are set out in the characterizing part of claim 1.
- Document US-A-4 816 788 discloses a high-frequency bandpass filter having a pattern of metal microwave ribbons in the shape of a comb, in which the ends of at least some teeth are capped with 'A feedback circuit comprising an amplifier and two portions of tape deposited on either side of the end of the tooth. But, because the resonator is of the line element type and the addition of energy is carried out at the free ends, that is to say at very limited areas, the coupling achieved is relatively weak.
- Figures 1 to 3 schematically show three embodiments of a dielectric resonator according to the invention, which are distinguished by the arrangement of the variable capacity element allowing the variation of the resonant frequency.
- FIGS. 4 and 5 are schematic representations respectively of stop and band pass filters, which comprise a dielectric resonator according to FIG. 3.
- Figure 6 is a sectional view along line VI-VI of Figure 4.
- Figure 7 is a sectional view along line VII-VII of Figure 4.
- the dielectric resonator according to FIGS. 1 to 3 comprises a pattern of metal microwave bands A of generally annular shape and split in 1.
- the pattern has a square shape comprising two elements of horizontal parallel ribbons 2 and two elements of vertical ribbons 3.
- the pattern is of the hairpin line type, that is to say comprising at the level of the slot 1 in the middle of the upper ribbon 2 two sections of metal strips or fingers 4 which are parallel and s 'extend in the direction of the center of the annular pattern, parallel to the ribbons 2. These strip sections have a predetermined length and constitute coupling lines.
- the circuit pattern could be established on a Duroid 5870 type substrate having a thickness of 0.503 mm and a dielectric constant of 2.32.
- This volume resonator structure is associated with a feedback circuit B formed by a metal microwave band, of the general shape of a C, the branches of which formed by band elements 6, 7 extend parallel to the microwave ribbons 3 of pattern A and are arranged very close to them.
- a feedback circuit B formed by a metal microwave band, of the general shape of a C, the branches of which formed by band elements 6, 7 extend parallel to the microwave ribbons 3 of pattern A and are arranged very close to them.
- an active electronic element such as a transistor indicated diagrammatically at 8.
- To the active element 8 can be associated, in the form of a discrete component, a phase rotation device. (not shown). However, this phase rotation function can also be performed by the strips (6, 7) of circuit 3 by giving them an appropriate length.
- the feedback circuit is designed so that it can inject energy into the resonator to compensate for losses.
- the active microwave resonator includes a device C for tuning in frequency.
- the embodiments represented in FIGS. 1 to 3 are distinguished by the embodiment of this tuning device C.
- the device C essentially comprises a variable capacity diode 11 mounted between the ends of the two coupling sections 4.
- the diode 11 is mounted between the end of one of the two sections 4 and the ground.
- the embodiment according to FIG. 3 comprises two variable capacitance diodes 11, each mounted between the end of a coupling section or finger 4 and the earth.
- the diodes can be controlled electronically in any manner known per se. They make the resonator tunable both in terms of its resonant frequency and its bandwidth.
- the parallel mounting of the diodes allows the use of so-called “vertical” diodes because they have the lowest stray capacitance. It is advantageous to use, for example, “vertical” diodes of the MESA type ensuring maximum variation of the impedance due to their very low parasitic capacity.
- the use of two diodes 11 in parallel increases the power handling and the frequency variation.
- the dielectric resonator according to the invention can be designed in a hybrid structure, but also in an integrated structure.
- the transistor 8 and the variable capacitance diode 11 can be produced in the form of an integrated circuit formed in the dielectric substrate of the resonator.
- Figures 4, 6, 7, on the one hand, and Figure 5 on the other hand, show two uses of a dielectric resonator according to Figure 3, namely a stop filter and a bandpass filter.
- the transmission microwave line indicated at 13 is continuous and extends parallel to the horizontal unsplit base side of the pattern A, at a low appropriate distance to ensure the desired coupling quality.
- the voltage allowing the variation of the capacitance of the diodes 11 is applied thereto via polarization inductors 14 and through corresponding microwave ribbons of the pattern A, the latter having at the base on each side. vertical 3 an interval 15 on which is mounted in parallel a localized capacity 16 which is however not compulsory.
- FIGS. 6 and 7 confirm that the stop filter is produced according to planar technology, the reference sign 18 designating the substrate made of dielectric material 17 on which the various metal microwave bands are deposited.
- the bandpass filter uses the same configuration of resonator as the stop filter of FIG. 4, the transmission line 13 however being interrupted at 19.
- the resonators according to the invention are of the high overvoltage type, they are tunable and achievable in micro-band techniques or fully integrable on a substrate. They are naturally stable as a function of temperature and have a very reduced overall volume compared to known technology. These resonators make it possible to produce various devices such as tunable filters, with zero losses, integrated tunable sources and radiating elements.
- the invention has numerous advantages over the state of the art.
- the coupling fingers 4 formed by two very close and parallel sections of microstrip line make it possible to reduce the length of the "resonant" ring by choosing a length of up to ⁇ / 10 or ⁇ / 8, where ⁇ represents the length d wave in the line of propagation, one brings back to the level of the resonator a higher input impedance than that due to the only capacity of the elements of lines and their couplings.
- the arrangement of the diodes in parallel allows the use of so-called “vertical” diodes, such as diodes of the MESA type, which are characterized by very low parasitic capacitances.
- the use of two parallel diodes increases the power handling and the frequency variation.
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Claims (12)
- Dielektrischer Resonator mit einem Motiv (A) aus Mikrowellenmetallstreifen, das auf ein dielektrisches Substrat mit starker relativer Permittivität aufgebracht ist und die allgemeine Form eines offenen Ringes hat, und mit einem aktiven Element (8) wie einem Transistor, das eine Gegenkopplung bildet und dem genannten Mikrowellenstreifenmotiv (A) zugeordnet ist, dadurch gekennzeichnet, dass die Enden des in allgemeiner Weise ringförmigen Motivs (A) einander angenähert sind, um einen Kopplungsspalt (1) zu bilden, dass das aktive Element (8) Teil eines Gegenkopplungskreises (B) mit metallischen Mikrowellenstreifen (6, 7) ist, die auf das dielektrische Substrat (17) in einer geringen Entfernung der Mikrowellenstreifen (3) des vorgenannten Mikrowellenstreifenmotivs (A) im wesentlichen parallel dazu auf beiden Seiten des genannten Spaltes (1) aufgebracht sind, um eine geeignete Kopplung zu schaffen.
- Resonator nach Anspruch 1, dadurch gekennzeichnet, dass er wenigstens ein Element (11) mit variabler Kapazität besitzt, das in das Mikrowellenstreifenmotiv (A) in der Nähe von dessen Spalt (1) eingebaut ist.
- Resonator nach einem der vorgehenden Ansprüche, dadurch gekennzeichnet, dass das Mikrowellenstreifenmotiv (A) vom Haarnadeltyp ist und in der Nähe des Spaltes zwei parallele Mikrowellenstreifenbereiche (4) besitzt, die sich zur Mitte des Motivs hin erstrecken.
- Resonator nach Anspruch 3, dadurch gekennzeichnet, dass das Element mit variabler Kapazität, wie eine Diode variabler Kapazität, zwischen dem Ende eines dieser Bereiche (4) und der Masse eingebaut ist.
- Resonator nach Anspruch 3, dadurch gekennzeichnet, dass eine Diode mit variabler Kapazität (11) zwischen dem Ende jedes Kopplungsbereiches (4) und der Masse eingebaut ist.
- Resonator nach Anspruch 3, dadurch gekennzeichnet, dass eine Diode mit variabler Kapazität (11) zwischen den freien Enden der Kopplungsbereiche (4) eingebaut ist.
- Resonator nach einem der Ansprüche 2 bis 6, dadurch gekennzeichnet, dass das Element mit variabler Kapazität (11) eine Diode des genannten "vertikalen" Typs, wie eine MESA-Diode ist.
- Resonator nach einem der vorgenannten Ansprüche, dadurch gekennzeichnet, dass der Kreis zur Versorgung mit Steuerspannung für eine Diode variabler Kapazität (11) einen Schaltkreisbereich besitzt, der mit einem Bereich der Mikrowellenstreifen (2, 4) des Motivs (A) verbunden ist, wobei ein Spalt (15) oder eine lokale Isolationskapazität in dem Motiv vorgesehen ist.
- Resonator nach Anspruch 8, dadurch gekennzeichnet, dass der genannte erste Schaltkreisbereich zur Versorgung mit der Steuerspannung eine Polarisierungsinduktivität (14) besitzt.
- Resonator nach einem der Ansprüche 3 bis 9, dadurch gekennzeichnet, dass das Mikrowellenstreifenmotiv (A) die allgemeine Form eines Quadrats hat und dass die metallischen Mikrowellenstreifen (6, 7) des Gegenkopplungskreises (B) sich zumindest teilweise parallel zu zwei parallelen Seiten (3) des Motivs (A), die nicht den genannten Spalt (1) besitzen, in einer geringen Entfernung von diesen erstrecken.
- Resonator nach einem der vorgenannten Ansprüche, dadurch gekennzeichnet, dass das aktive Element (8) und gegebenenfalls die Elemente mit variabler Kapazität (11) als integrierte Schaltkreise innerhalb des dielektrischen Substrats (17) des Resonators ausgebildet sind.
- Filter wie ein Bandbegrenzungs- oder Bandpassfilter, dadurch gekennzeichnet, dass es einen dielektrischen Resonator nach einem der Ansprüche 1 bis 11 besitzt, und dass die Übertragungsleitung (13) auf das Substrat (17) des Resonators aufgebracht ist und sich parallel zu dem Streifen (2) des Motivs (A) in einer geringen Entfernung davon erstreckt, der parallel zu dem den Spalt (1) aufweisenden Streifen verläuft.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR909003057A FR2659509B1 (fr) | 1990-03-09 | 1990-03-09 | Resonateur dielectrique a rubans metalliques micro-ondes et dispositif utilisant un tel resonateur. |
FR9003057 | 1990-03-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0446108A1 EP0446108A1 (de) | 1991-09-11 |
EP0446108B1 true EP0446108B1 (de) | 1996-05-08 |
Family
ID=9394589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP91400558A Expired - Lifetime EP0446108B1 (de) | 1990-03-09 | 1991-02-28 | Dielektrischer Resonator mit Mikrowellenmetallstreifen und mit diesem Resonator ausgerüstete Vorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5187460A (de) |
EP (1) | EP0446108B1 (de) |
CA (1) | CA2037724A1 (de) |
DE (1) | DE69119273T2 (de) |
FR (1) | FR2659509B1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575316A (ja) * | 1991-09-10 | 1993-03-26 | Fujitsu Ltd | リング共振器 |
US5990766A (en) * | 1996-06-28 | 1999-11-23 | Superconducting Core Technologies, Inc. | Electrically tunable microwave filters |
US7323955B2 (en) * | 2005-06-06 | 2008-01-29 | The United States Of America As Represented By The Secretary Of The Navy | Narrow-band absorptive bandstop filter with multiple signal paths |
KR100921383B1 (ko) * | 2006-09-08 | 2009-10-14 | 가부시키가이샤 엔.티.티.도코모 | 가변 공진기, 대역폭 가변 필터, 전기회로 장치 |
CN101150215A (zh) * | 2006-09-22 | 2008-03-26 | 鸿富锦精密工业(深圳)有限公司 | 滤波器 |
AU2014280947B2 (en) * | 2008-09-23 | 2016-11-03 | Advanced Micro Devices, Inc. | Millimetre wave bandpass filter on CMOS |
WO2010034049A1 (en) * | 2008-09-23 | 2010-04-01 | National Ict Australia Limited | Millimetre wave bandpass filter on cmos |
US8305164B1 (en) | 2009-06-09 | 2012-11-06 | The United States Of America, As Represented By The Secretary Of The Navy | Frequency-agile frequency-selective variable attenuator |
CN103022598A (zh) * | 2011-09-20 | 2013-04-03 | 杭州轩儒电子科技有限公司 | 毫米波滤波器及用于形成毫米波滤波器的基底结构 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7314269A (nl) * | 1973-10-17 | 1975-04-21 | Philips Nv | Microgolfinrichting voorzien van een 1/2 lambda resonator. |
FR2321771A1 (fr) * | 1975-08-19 | 1977-03-18 | Thomson Csf | Procede de fabrication de diodes empilees et dispositif hyperfrequence obtenu par ledit procede |
US4262269A (en) * | 1979-12-10 | 1981-04-14 | Hughes Aircraft Company | Q Enhanced resonator |
US4323855A (en) * | 1980-04-09 | 1982-04-06 | The United States Of America As Represented By The Secretary Of The Army | MIC Combiner using unmatched diodes |
FR2510325B1 (fr) * | 1981-07-24 | 1987-09-04 | Thomson Csf | Filtre hyperfrequence de petites dimensions, a resonateurs lineaires |
US4604591A (en) * | 1983-09-29 | 1986-08-05 | Hazeltine Corporation | Automatically adjustable delay circuit having adjustable diode mesa microstrip delay line |
SU1298817A1 (ru) * | 1985-06-19 | 1987-03-23 | Московский Электротехнический Институт Связи | Полосковый резонатор |
US4816788A (en) * | 1986-07-01 | 1989-03-28 | Murata Manufacturing Co., Ltd. | High frequency band-pass filter |
FR2613538A1 (fr) * | 1987-03-31 | 1988-10-07 | Thomson Csf | Filtre hyperfrequence |
JPS63286002A (ja) * | 1987-05-19 | 1988-11-22 | Matsushita Electric Ind Co Ltd | 高周波フィルタ |
JPH0244802A (ja) * | 1988-08-04 | 1990-02-14 | Matsushita Electric Ind Co Ltd | 共振器 |
GB2260651B (en) * | 1988-08-04 | 1993-06-30 | Matsushita Electric Ind Co Ltd | A resonator and a filter including the same |
JPH02146801A (ja) * | 1988-11-28 | 1990-06-06 | Fujitsu Ltd | 中心周波数可変帯域通過フィルタ |
-
1990
- 1990-03-09 FR FR909003057A patent/FR2659509B1/fr not_active Expired - Fee Related
-
1991
- 1991-02-28 EP EP91400558A patent/EP0446108B1/de not_active Expired - Lifetime
- 1991-02-28 DE DE69119273T patent/DE69119273T2/de not_active Expired - Fee Related
- 1991-03-07 US US07/665,816 patent/US5187460A/en not_active Expired - Fee Related
- 1991-03-07 CA CA002037724A patent/CA2037724A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US5187460A (en) | 1993-02-16 |
CA2037724A1 (en) | 1991-09-10 |
EP0446108A1 (de) | 1991-09-11 |
DE69119273T2 (de) | 1997-01-02 |
FR2659509B1 (fr) | 1994-07-29 |
FR2659509A1 (fr) | 1991-09-13 |
DE69119273D1 (de) | 1996-06-13 |
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